CN104668888A - Integrated tube shell manufacturing method - Google Patents

Integrated tube shell manufacturing method Download PDF

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Publication number
CN104668888A
CN104668888A CN201310607036.1A CN201310607036A CN104668888A CN 104668888 A CN104668888 A CN 104668888A CN 201310607036 A CN201310607036 A CN 201310607036A CN 104668888 A CN104668888 A CN 104668888A
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CN
China
Prior art keywords
copper billet
copper
extrusion die
extruding
manufacture method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310607036.1A
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Chinese (zh)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Prosperous Science And Technology Ltd In Sea Xiamen City
Original Assignee
Prosperous Science And Technology Ltd In Sea Xiamen City
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prosperous Science And Technology Ltd In Sea Xiamen City filed Critical Prosperous Science And Technology Ltd In Sea Xiamen City
Priority to CN201310607036.1A priority Critical patent/CN104668888A/en
Publication of CN104668888A publication Critical patent/CN104668888A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Extrusion Of Metal (AREA)

Abstract

The invention discloses an integrated tube shell manufacturing method, and relates to a manufacturing process of an electric semiconductor tube shell cathode. The manufacturing method comprises the following steps: (1) a copper bar is cut to copper blocks; (2) the copper blocks are put in an extruder for extruding; and (3) extruded workpiece blanks are machined by an NC lathe to remove scales and to improve the size precision.

Description

Integration shell manufacture method
Technical field
The present invention relates to a kind of preparation method of power semiconductor tube.It is high that the power semiconductor tube of this explained hereafter has production efficiency, and air-tightness is high, the advantage that structural strength is high.
Background technology
Power Electronic Technique is modern efficient power-saving technology, is the important interface between information industry and conventional industries, and being vulnerabilities scan and by the bridge controlled between forceful electric power, is the basic technology supporting multinomial high technology development in field widely.Wherein high-power electric-power semiconductor device is the core unsteady flow parts of generating, distribution, transmission of electricity, electricity consumption, energy storage, can carry out accurately controlling efficiently and conversion to electric current, voltage, power, frequency, for power distribution, electric energy conversion, controlling electric energy, play the effect of energy-conserving and environment-protective, be widely used in the fields such as Ferrous Metallurgy, electric power (generating, distribution, transmission of electricity), machinery production, track traffic, environmental protection, oil, chemical industry, automobile making, boats and ships making, mine, military project.
The basis of Development of Power Electronic Technology is the appearance of high-quality high-power electric-power semiconductor device, and the development of the latter will propose higher requirement to high-power electric semiconductor shell again.Current power semiconductor tube negative electrode all adopts copper body and flange copper sheet to form through high-temperature soldering, there is the problem that stress of sealing is larger, and when long-time load operation, the air-tightness of shell device can decline, thus causes the premature failure of semiconductor devices.Meanwhile, flange and copper body are also difficult to when welding ensure the consistent of concentricity, cannot meet the requirement of high-end customer.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of power semiconductor tube, the method for the copper body of abandoning tradition and flange high temp welding, adopts integrated molding technology, not disposablely by welding produces shell part.The method greatly can improve the service life of power semiconductor tube, thus meets the needs of high-quality high-power electric-power semiconductor device.
For achieving the above object, technical solution of the present invention is:
(1) copper rod is become contour copper billet by sawing machine sawing;
(2) contour copper billet is annealed in reducing atmosphere;
(3) make the extrusion die of extruder, extrusion die has the draft angle of 5 degree;
(4) 600 tons of extruders extrude copper billet by extrusion die, form the blank of copper body and flange one;
(5) by extruding after copper billet blank through NC lathe process become needed for size.
After adopting such scheme, because shell negative electrode directly becomes the shape of final products, whole shell negative electrode all adopts commaterial, ensure that the structural strength of product, too increase the compactness of shell negative electrode simultaneously, improve the mechanical strength of shell, owing to being commaterial, eliminate the impact of solder on sealing strength, thus drastically increase the air-tightness of product, meanwhile, the product later stage is by NC lathe process gained, therefore, also ensure that the concentricity of product.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of traditional handicraft.
Fig. 3 process chart of the present invention.
Detailed description of the invention
The preparation method of a kind of power semiconductor tube of the present invention, is characterized in that: its technique comprises: blanking-extruding-NC lathe process.A, described blanking be by the copper rod of relevant specification by cutting machine, become the fritter copper billet of measured length.B, described extruding refer to that the copper billet after by cutting is placed in the extrusion die of extruder, by applying pressure to reach the plastic deformation of copper billet on copper billet, form the blank of copper body and flange one.The draft angle of extrusion die is 5 degree.C, described NC lathe process, be while removal extruding surface of the work hardened layer, improve the dimensional accuracy of workpiece further.

Claims (5)

1. integrated shell manufacture method, is characterized in that:
By the copper rod of relevant specification by cutting machine, become the fritter copper billet of measured length; Be placed in the extrusion die of extruder by the fritter copper billet after cutting, by applying pressure to reach the plastic deformation of copper billet on copper billet, the draft angle of extrusion die is 5 degree; By the workpiece after extruding by NC lathe process, while removing extruding surface of the work hardened layer, improve the dimensional accuracy of workpiece further.
2. integrated shell manufacture method as claimed in claim 1, is characterized in that: copper rod, by cutting machine, becomes the fritter copper billet of measured length.
3. integrated shell manufacture method as claimed in claim 1, is characterized in that: be placed in the extrusion die of extruder, by applying pressure to reach the plastic deformation of copper billet on copper billet by the fritter copper billet after cutting.
4. integrated shell manufacture method as claimed in claim 1, is characterized in that: the draft angle of extrusion die is 5 degree.
5. the preparation method of a kind of power semiconductor tube as claimed in claim 1, is characterized in that: the workpiece after extruding, need use NC lathe process, removes the oxide skin on surface and the accurate size of final formation.
CN201310607036.1A 2013-11-27 2013-11-27 Integrated tube shell manufacturing method Pending CN104668888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310607036.1A CN104668888A (en) 2013-11-27 2013-11-27 Integrated tube shell manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310607036.1A CN104668888A (en) 2013-11-27 2013-11-27 Integrated tube shell manufacturing method

Publications (1)

Publication Number Publication Date
CN104668888A true CN104668888A (en) 2015-06-03

Family

ID=53304751

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310607036.1A Pending CN104668888A (en) 2013-11-27 2013-11-27 Integrated tube shell manufacturing method

Country Status (1)

Country Link
CN (1) CN104668888A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2071096U (en) * 1990-04-04 1991-02-13 太原机械学院 Medium and small t shape tube mould
US6091134A (en) * 1997-08-22 2000-07-18 Enomoto Co., Ltd. Semiconductor lead frame and method for manufacturing the same
CN1334598A (en) * 2000-07-21 2002-02-06 中村制作所株式会社 Method for forming electronic element sealing device
CN1604826A (en) * 2001-12-19 2005-04-06 昭和电工株式会社 Extrusion tool, method for manufacturing shaped article with fins, and heat sink
JP2006005025A (en) * 2004-06-15 2006-01-05 Sharp Corp Method of manufacturing semiconductor wafer with lid and method of manufacturing semiconductor apparatus
CN102350614A (en) * 2011-08-16 2012-02-15 山东中佳新材料有限公司 Machining method for seamless copper pipe
CN102554561A (en) * 2011-02-01 2012-07-11 郑维舟 Method for manufacturing power semiconductor tube
CN102581060A (en) * 2012-02-20 2012-07-18 绍兴市力博电气有限公司 Method for processing copper tube having circular inside and quadrate outside

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2071096U (en) * 1990-04-04 1991-02-13 太原机械学院 Medium and small t shape tube mould
US6091134A (en) * 1997-08-22 2000-07-18 Enomoto Co., Ltd. Semiconductor lead frame and method for manufacturing the same
CN1334598A (en) * 2000-07-21 2002-02-06 中村制作所株式会社 Method for forming electronic element sealing device
CN1604826A (en) * 2001-12-19 2005-04-06 昭和电工株式会社 Extrusion tool, method for manufacturing shaped article with fins, and heat sink
JP2006005025A (en) * 2004-06-15 2006-01-05 Sharp Corp Method of manufacturing semiconductor wafer with lid and method of manufacturing semiconductor apparatus
CN102554561A (en) * 2011-02-01 2012-07-11 郑维舟 Method for manufacturing power semiconductor tube
CN102350614A (en) * 2011-08-16 2012-02-15 山东中佳新材料有限公司 Machining method for seamless copper pipe
CN102581060A (en) * 2012-02-20 2012-07-18 绍兴市力博电气有限公司 Method for processing copper tube having circular inside and quadrate outside

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Application publication date: 20150603