CN104662251A - Diamond cutting elements for drill bits seeded with HCP crystalline material - Google Patents
Diamond cutting elements for drill bits seeded with HCP crystalline material Download PDFInfo
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- CN104662251A CN104662251A CN201380036169.6A CN201380036169A CN104662251A CN 104662251 A CN104662251 A CN 104662251A CN 201380036169 A CN201380036169 A CN 201380036169A CN 104662251 A CN104662251 A CN 104662251A
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- seed crystal
- crystal material
- diamond
- mixture
- composite sheet
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- 239000010432 diamond Substances 0.000 title claims abstract description 85
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 84
- 238000005520 cutting process Methods 0.000 title claims description 76
- 239000002178 crystalline material Substances 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000003054 catalyst Substances 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 60
- 238000002386 leaching Methods 0.000 claims description 40
- 239000002131 composite material Substances 0.000 claims description 37
- 239000000203 mixture Substances 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000006185 dispersion Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 229910000238 buergerite Inorganic materials 0.000 claims description 8
- 239000003863 metallic catalyst Substances 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910021402 lonsdaleite Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 abstract 1
- 238000011081 inoculation Methods 0.000 description 15
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 239000011435 rock Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005553 drilling Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002343 natural gas well Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- -1 or alternately Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
- E21B10/56—Button-type inserts
- E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/386—Boron nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/75—Products with a concentration gradient
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/363—Carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
- C04B2237/588—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different particle or grain sizes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/008—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes with additional metal compounds other than carbides, borides or nitrides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
Abstract
A polycrystalline diamond compact (PDC), which is attached or bonded to a substrate to form a cutter for a drill bit, is comprised of sintered polycrystalline diamond interspersed with a seed material which has a hexagonal close packed (HCP) crystalline structure. A region of the sintered polycrystalline diamond structure, near one or more of its working surfaces, which has been seeded with an HCP seed material prior to sintering, is leached to remove catalyst. Selectively seeding portions or regions of a sintered polycrystalline diamond structure permits differing leach rates to form leached regions with differing distances or depths and geometries.
Description
Technical field
Present invention relates in general to the cutting part of the drill bit (drill bit) for land probing.
Background technology
When making hole with the natural gas well, there is the drill bit for boring subterranean strata of two kinds of fundamental types: drag bit (drag bit) and rock bit (roller cone bit).
Drag bit does not have movable part.When drag bit rotates by rotating drill string of its attachment usually, be attached to discrete cutting part (" cutting knife (cutter) ") scraping in bit face across shaft bottom, backing-off cutting or shear stratum.Each cutting knife of rotary drag located and is oriented on the face of drag bit, making the engagement stratum when bit, a part of face of being called as its wear surface.Cutting knife divide with fixing predetermined pattern be interposed between drill main body cutting external surface or face on.Cutting knife is usually along each arrangement of some blades (blade), described blade is outstanding ridge, usually extends from the central axis of drill bit to the periphery of described is radial generally to scan (sweep) mode (instead of straight line).The cutting profile that cutting knife along each blade provides formation predetermined, shears stratum when bit.Drilling fluids is pumped in the central passage that bit central formed downwards along drill string, is then left by the outlet formed in bit face, and described fluid had not only cooled cutting knife and but also aided between blade and remove and carrying chip (cutting).
Rock bit comprises two or three taper cutting knifes, and it rotates around becoming the axle at 35 degree of angles with the axis of rotation of drill bit.When the bit is rotated, roll in the bottom of gear wheel (cone) across aperture.When rock by between gear wheel and stratum time, this rock crushes by the cutting part on gear wheel surface---also referred to as cutting knife---.
In order to improve the performance of drill bit, one or more polycrystalline diamond (" the PCD ") layers by existing with the composite polycrystal-diamond being attached to substrate (" PDC ") form in the wear surface of described cutting part or working surface obtain.A kind of common substrate is cementing (cemented) tungsten carbide.Be attached on substrate after PDC makes, and the substrate that PDC combines comprises described cutting knife.With the drag bit of described PDC cutting part sometimes referred to as " PDC drill bit ".Although PDC is stone and have high-wearing feature or wear resistence, it tends to relatively frangible.Although substrate is hard not as PDC, therefore it than PDC more flexible, and have higher resistance to impact.Usually by the long enough of substrate manufacture to serve as installation stud, its part just inserts the groove (pocket) or recessed (recess) that are formed in drill main body, or inserts in gear wheel (roller) bag (packet) that formed for rock bit.But, in some drag bit, described PDC and substrat structure be attached to metal install stud, described installation stud embed subsequently groove or other recessed in.
Composite polycrystal-diamond is obtained by following step: mixed with one or more powdered gold metal catalysts and other materials by the polycrystalline diamond of powder type, this mixture is formed as composite sheet, and uses Gao Re and high pressure or heating using microwave to sinter it subsequently.Although the alloy of cobalt or cobalt is modal catalyzer, other group VIII metals such as nickel, iron and alloy thereof also can be used as catalyzer.For cutting knife, PDC is formed by following step usually: piled up by contiguous for the polycrystalline diamond particle (being called " diamond abrasive ") not containing metallic catalyst cemented tungsten carbide substrate, and the two be sintered together subsequently.In sintering process, the metal adhesive in substrate---in when cobalt cemented tungsten carbide for cobalt---scans into or infiltrates described composite sheet, serving as catalyzer to cause the formation of the diamond-diamond bond between adjacent diamond particles.Result obtains the agglomerate of the diamond crystal combined, and described agglomerate is described to the diamond substrate of continuous print or integration even " lattice ", and the interstitial void between described diamond is filled with metallic catalyst at least in part.
The substrate supporting PDC layer is made up of cemented metal carbide (tungsten carbide is the most common) at least partly.Cemented metal carbide substrate is formed by agglomerated powder powder metal carbide powders and metal alloy binder.The composite material (composite) of PDC and substrate can manufacture in a number of different ways.Such as, it also can comprise transition zone, and wherein metal carbides and diamond mix to improve the stress combining and reduce between PDC and substrate with other compositions.Substrate mentioned in this article comprises such substrate.
Due to the existence of metallic catalyst, PDC shows thermal instability.Cobalt has the coefficient of expansion different from diamond.Its expansion rate is larger, therefore tends at a higher temperature weaken diamond lattic structure.In addition, the fusing point of cobalt is lower than diamond, and it can cause when temperature meets or exceeds the fusing point of cobalt, and cobalt causes the diamond crystal in PDC to start graphitization, also weakens described PDC.For making PDC at least more thermal-stable, by sizable percentage---usually more than 50%; Often 70% to 85%; And likely higher---catalyzer remove the region of the working surface of maximum temperature from least one contiguous one or more standing due to friction.Catalyzer is removed by leaching processes, and described technique comprises in strong acid PDC being positioned over heat, and the example of described strong acid comprises nitric acid, hydrofluoric acid, hydrochloric acid or perchloric acid and their combination.In some cases, by the heating of this acid blend and/or can vibrate to accelerate this leaching processes.
But the removal of cobalt is considered to the toughness reducing PDC, thus reduce its resistance to impact.In addition, leaching PDC can cause the removal of the cobalt of some cementing or bonded substrates, thus affects intensity or the integrality of substrate and/or substrate-diamond interface.Due to these misgivings, the leaching of cutting knife is at present " part ", be meant to catalyzer only remove from PDC region, described region, usually according to the one or more working surfaces from PDC, comprises the degree of depth that the top of cutting knife, chamfered edge or side record or distance limits.
For when do not damage substrate or between substrate and PCD in conjunction with PCD can by the degree of depth of leaching exist technology restriction.The restriction of this technology relates to the shelter (mask) and sealer (seal) that protection substrate destroys from acid bath (wherein place cutting knife to carry out leaching).Sealer is made by when being exposed to the material for tending to decompose in time during leaching PCD sour, thus duration of restriction leaching therefore reach the described degree of depth.In addition, when diamond particle diameter reduces, when being reduced to nanometer particle size (being less than 100 nanometers) in some cases, diamond lattic structure in PCD becomes much finer and close, and therefore leaching to any useful degree of depth (being such as greater than the leaching degree of depth of 100 microns) becomes unrealistic.At least, these finer and close structures be more difficult to leaching many, need much longer leaching time.
Summary of the invention
The present invention relates to the cutting part of the improvement for land drill bit, manufacture the method for described cutting part and use the drill bit of described cutting part.
In the example of a cutting part improved, composite polycrystal-diamond (PDC) comprises the polycrystalline diamond being scattered with the seed crystal material with hexagonal closs packing (HCP) crystal structure, and described composite polycrystal-diamond is attached or is bonded to substrate to form the cutting knife for drill bit.
In the example of another PDC cutting part improved, leaching is carried out to remove catalyzer in the region (it has used HCP seed crystal material to inoculate before sintering) near one or more working surface in polycrystalline diamond structure.The region with HCP seed crystal material is faster than the region leaching of the polycrystalline diamond structure not containing HCP seed crystal material, thus the leaching allowing the possible mode that limits due to the technology of the PCD not using any seed crystal material and make than other darker.Quick leaching has special advantage for the polycrystalline diamond charging comprising particle diameter and be less than the particle of 30 microns.The selective inoculation part of polycrystalline diamond structure or region also allow to utilize different leaching rate to form the leaching region with different distance or the degree of depth and geometry.
Accompanying drawing explanation
Fig. 1 is the phantom drawing of PDC drag bit.
Fig. 2 A, 2B and 2C are the phantom drawing of the representative PDC cutting knife of the drag bit being applicable to Fig. 1, lateral view and top view respectively.
Fig. 3 A, 3B and 3C are the cross sections of four different instances of the PDC cutting knife of Fig. 2 A-2C, use HCP material to inoculate in the zone of dispersion of described PDC cutting knife in its diamond lattic structure, and subsequently by leaching partly or wholly to remove catalyzer from least described inoculation region.
Fig. 4 is the cross section in diamond layer with an embodiment of the PDC cutting knife throughout the HCP seed crystal material scattered of Fig. 2 A-2C.
Detailed description of the invention
In the following description, identical numeral refers to identical parts.
Fig. 1 shows an example 100 of PDC drag bit.But it is intended to as drag bit and in general manner for making hole and the representative example of drill bit of the natural gas well.Described drag bit is designed to rotate around its central axis 102.Described drag bit comprises the drill main body 104 being connected to handle 106, and described handle 106 has and connects drill bit and be coupled 108 and for coordinating spanner to tighten up and loosening and " bit breaker " that be coupled surperficial 111 of drill string with the tapered thread of drill string.Be intended to be called bit face towards the body outer surface in probing direction generally.Described bit face is positioned in the plane vertical with the central axis 102 of described drill bit generally.Described main body is not limited to any specific material.Such as, it can be made up of steel or the Powdered tungsten carbide as cementing in metal adhesive of host material.
Multiple outstanding " blade " is arranged in bit face, each called after 110, outstanding from the face of described drill bit.Each blade generally radially, extends outwardly into the periphery of cut surface.In this example, have 6 blades around central axis equi-spaced apart substantially, and each blade in this embodiment scans (sweep) along the direction of rotation shown in arrow 115 or bends backward.
Each blade is installed multiple discrete cutting part, or " cutting knife " 112.Each discrete cutting part is arranged in recessed or groove.In drag bit, cutting knife is placed along advance (intention direction of rotation) side of blade, and their working surface is used for shearing stratum when drill bit rotates around its central axis towards direction of advance generally.In this example, cutting knife is along blades aligned, and to form cutting or to cut a hole the structure of hitting stratum, subsequently the chip of generation is pushed drilling fluids, described fluid leaves drill bit by nozzle 117.Drilling fluids and then chip or chip are upwards transported to surface along boring.
In the example of this drag bit, all cutting knifes 112 are all PDC cutting knifes.But in other embodiments, not every cutting knife must be all PDC cutting knife.PDC cutting knife in this example has the working surface made primarily of superhard polycrystalline diamond or similar item, and by substrate supports, and described substrate forms erection bolt and is used for being placed in the groove that formed in described blade.Each PDC cutting knife manufactures discretely, subsequently by brazing, to press-fit or additive method is installed in groove that drill bit is formed.But the cylinder form that PDC layer and substrate are made into them usually uses.The example of this drill bit comprises gauge liner (gauge pad) 114.In some applications, the gauge liner of drill bit such as drill bit 100 can comprise insert that is heat-staple, polycrystalline diamond (TSP).
Fig. 2 A-2C shows the example of PDC cutting knife 200.Described PDC cutting knife comprises substrate 202, and it attaches to the layer 204 of polycrystalline diamond (PCD).This layer is also sometimes referred to as diamond pedestal.Should notice that described cutting knife does not draw in proportion, it is intended to represent the typical cutting knife with the polycrystalline diamond structure being attached to substrate, the one or more PDC cutting knifes 112 on the drill bit 100 of especially Fig. 1.Although normally cylindrical, PDC cutting knife is not limited to the individual layer of given shape, size or geometry or PCD usually.In this example, cut sth. askew in the edge between the top surface 206 of diamond layer 204 and side surface 208, to form chamfered edge 210.In this example, top surface and beveled surface each be working surface, for contacting and cutting through stratum.Side surface particularly near the part at top, also can contact with stratum or chip.On drill bit, not every cutting knife must be all identical size, structure or shape.Except with except different size and form sintering, PDC cutting knife can be cut, grind or milling to change its shape.In addition, described cutting knife can have multiple discrete PCD structure.The example of other possible cutting knife shapes can be gauge cutting knife, the tip (pointed) of pre-complanation (pre-flatted) or rule (scribe) cutting knife, scalpriform (chisel-shaped) cutting knife and arch insert (dome insert).
Except Fig. 2 A-2C, now also with reference to Fig. 3 A-3C and Fig. 4, the diamond lattic structure comprising diamond layer 204 has at least one zone of dispersion being wherein scattered with crystal crystal seed material granule or scope.An example of described crystal crystal seed is the material with hexagonal closs packing (HCP) structure.The example of described HCP crystal seed crystal material comprises the material with wurtzite crystal structure, comprises such as buergerite boron nitride (BNw), buergerite carborundum and lonsdaleite (lonsdaleite).
Described diamond lattic structure is formed by following method: by industrial that be called the synthesis of diamond abrasive or the little of natural diamond or thin particle and HCP seed crystal material particle (containing or not containing additional materials) mix to obtain required concentration according to predetermined ratio.Then composite sheet or formed by whole mixture, or alternately, composite sheet is formed by following manner: the mixture zone of dispersion in described composite sheet or volume comprise described mixture, and the remainder of described composite sheet (or at least one other region of composite sheet) comprises PCD particle (containing any additional materials) but do not comprise HCP seed crystal material.The composite sheet of described formation then at catalyzer as under the existence of cobalt, cobalt alloy or any group VIII metal or alloy, sinter at elevated pressures and temperatures.Catalyzer is formed in then the cementing tungsten carbide substrate of described catalyzer sinters and infiltrate described composite sheet by making composite sheet.What obtain is the PCD structure sintered, and it has at least one region comprising HCP seed crystal material, and described HCP seed crystal material is dispersed throughout described region with the ratio identical with described mixture.
HCP seed crystal material can have particle diameter between 0 to 60 micron, particle diameter between 0 to 30 micron in one embodiment, and the particle diameter in another embodiment between 0 to 10 micron.PCD particle in mixture in 0 to 40 micrometer range, and can be as small as nanometer particle size.In one embodiment, in mixture, the ratio of HCP seed crystal material of---and therefore with in HCP seed crystal material inoculation region---or concentration are 5 volume % or less.In another embodiment, described ratio or concentration are in the scope of 0.05 volume % to 2 volume %, and in further embodiment, described ratio or concentration are in the scope of 0.05 volume % to 0.5 volume %.
PCD can according to particle diameter layering in composite sheet.Such as, the layer near working lining will comprise more fine grained (that is, being less than the particle of predetermined particle diameter), and layer far away (being perhaps the basic unit near substrate) has the particle being greater than predetermined particle diameter.HCP seed crystal material can only mix the first area or the layer that form close working surface with the more fine grained of diamond compound abrasive, or mixes with multiple layers of diamond compound abrasive.
Alternately, the mixture in diamond layer with the HCP seed crystal material of variable concentrations or ratio can form multiple different region or layer in described diamond lattic structure, no matter has in the remaining structure of PCD layer or does not have HCP seed crystal material.
In the example that another is alternative, HCP material tool has the crystal seed crystal material (non-diamond) of the blended crystal structure of zinc to replace, and described structure is a kind of face-centered cubic (FCC) structure.The example of such material comprises cubic boron nitride.
It is believed that the PCD with the inoculation of HCP crystal seed crystal material, BNw particularly mentioned above, result in the polycrystalline diamond structure with faster leaching time.It is believed that in addition, have according to above-described method, use HCP seed crystal material, and the PDC cutting knife of the diamond layer particularly formed as seed crystal material with BNw, compared with there is the identical PDC cutting knife of the diamond lattic structure formed without HCP seed crystal material, due to the fracture toughness that improves and abrasion resistance and performance is better.
In the different embodiments of PDC cutting knife 200 shown in Fig. 3 A-3C, region or the part of sintering PCD diamond layer or structure 204 (being wherein scattered with HCP seed crystal material (" inoculation region ")) are usual with stippled mark, and the degree of depth that the leaching of diamond layer part reaches indicates with dotted line 300.In each example, all contiguous top surface 206 in inoculation region and the perimeter edge surface 210 of cutting sth. askew, described surface is working surface.
In the embodiment of Fig. 3 A, inoculation region 302 across the whole top surface of diamond layer 204, and along the part of its side to downward-extension.Described inoculation region extends downward from top surface 206 and to record from top surface and to be less than the homogeneous degree of depth 304 of PCD layer thickness.As dotted line 300 indicate, diamond layer leaching is to the degree of depth 304, and compared with non-leaching region, leaching remains in the metallic catalyst of the quite large percentage in diamond layer after eliminating sintering.
Inoculation region 306 in Fig. 3 B embodiment also extends whole across diamond layer 204 as the embodiment of Fig. 3 A.Described region is along side surface 208 extended distance 308 downwards, and described distance 308 is with to inoculate the distance as shown in the degree of depth 304 of region 302 from top surface in Fig. 3 A embodiment approximately identical.But, with the embodiment of Fig. 3 A unlike, described inoculation region is approximately distance 308 from the degree of depth that top surface extends, and it is far smaller than the degree of depth 304 in Fig. 3 A.Owing to inoculating the leaching rate in region 306 in diamond layer relatively faster than non-seeded region, the leaching pattern that line 300 indicates can be substantially consistent with inoculation regional boundary line.
The embodiment of Fig. 3 C has the inoculation region 310 of annular shape, and described region extends internally 312 (they are less than the radius of top surface) of distance to the degree of depth 314 recorded from top surface 206 from the periphery of top surface 206 as shown in Fig. 3 C 208.The degree of depth that this embodiment is extremely indicated by dotted line 300 by leaching.Because the leaching rate inoculating region 310 is faster, therefore the leaching degree of depth 314 in inoculation region 310 is greater than the leaching degree of depth 316 in non-seeded region under the described part of top surface 206, as shown in region 318.
In the embodiment illustrated in fig. 4, whole diamond layer 204 HCP crystalline material inoculation.For the diamond matrix of 0 to 10 micron, particularly when pressing pressure is very high, the PCD obtained tends to very fine and close.The density increased causes rising appreciably of leaching time.It is believed that this is because PCD microstructure has relatively little interstitial void, thus inhibit leaching acid close to group VIII metal catalytic thing.Such as, if PCD layer comprises the diamond abrasive that particle diameter is 0 to 10 micron, under high pressure suppress, then the actual restriction of the leaching degree of depth will be about 250 microns.This is the degraded due to the encapsulant for stoping acid contact substrate.If use nano particle in diamond abrasive, then this actual leaching degree of depth will reduce further when diamond density rises further, make the benefit of leaching become insignificant.Add melee charging PCD leaching that HCP seed crystal material can make particle diameter be less than 20 microns to far more than the degree of depth of 500 microns, and in some embodiments leaching to the degree of depth more than 1200 microns.
Above-described is exemplary and preferred embodiment.The present invention's such as claims limit, and are not limited to described embodiment.Can without departing from the scope of the present invention disclosed embodiment be changed and be revised.Unless clear stipulaties separately, in this manual, the implication of term used is intended to have conventional with customary implication, and is not intended to be limited to shown or described structure or embodiment.
Claims (29)
1. manufacture a method for the polycrystalline diamond structure being used for land drill bit, described method comprises:
HCP seed crystal material particle is mixed to form mixture with diamond compound abrasive particle;
Form composite sheet for sintering, described composite sheet contain throughout diamond compound abrasive, the mixture at least partially containing HCP seed crystal material and diamond compound abrasive of described composite sheet; With
Sinter described composite sheet in the presence of a catalyst thus form diamond lattic structure, described structure comprises the integrated agglomerate showing the polycrystalline diamond (PCD) that diamond-diamond combines, metallic catalyst occupies wherein space, and described composite sheet is scattered with described HCP seed crystal material at least in part.
2. the process of claim 1 wherein that described catalyzer comprises metal.
3. the process of claim 1 wherein that described HCP seed crystal material has wurtzite crystal structure.
4. the process of claim 1 wherein that described HCP seed crystal material is selected from the group be substantially made up of buergerite boron nitride, buergerite carborundum and lonsdaleite.
5. the process of claim 1 wherein that described HCP seed crystal material comprises buergerite boron nitride.
6. the method for any one of claim 1 to 5, the particle diameter of wherein said HCP seed crystal material is 0 to 40 micron.
7. the method for any one of claim 1 to 5, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 40 microns.
8. the method for claim 7, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 30 microns.
9. the method for claim 7, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 100 nanometers at least one dimension.
10. the method for any one of claim 1 to 5, what wherein said HCP seed crystal material formed described mixture is less than 5 volume %.
The method of 11. claims 10, what wherein said HCP seed crystal material formed described mixture is less than 1 volume %.
The method of 12. claims 10, in wherein said mixture, the amount of HCP seed crystal material forms the amount between 0.05 volume % to 0.5 volume % of described mixture.
13. the process of claim 1 wherein that described composite sheet has multiple surface, and wherein at least one surface is working surface; With wherein said composite sheet, there is at least one contiguous described working surface, zone of dispersion containing described mixture, and at least one is containing the region of described mixture.
14. the process of claim 1 wherein that described mixture is arranged at least one zone of dispersion of described composite sheet, and wherein said composite sheet has at least, and another has the region of the PCD without HCP seed crystal material.
The method of 15. claims 1, wherein said mixture has HCP seed crystal material and the PCD of the first ratio, wherein said method comprises further and being mixed with the second ratio being different from described first ratio with HCP seed crystal material particle by diamond compound abrasive particle, and formed and comprise at least one and have the HCP seed crystal material of the first ratio and the mixture zone of dispersion of PCD, and at least one has the composite sheet of the HCP seed crystal material of the second ratio and the mixture zone of dispersion of PCD.
16. the process of claim 1 wherein that described composite sheet is formed by multiple surface, and one of them surface is working surface and one of them surface is basal surface; And the described composite sheet wherein formed has at least two-layer PCD: be close to described working surface, there is the first floor of the PCD particle of the first particle diameter or particle size range, with closer to described basal surface, the second layer with the PCD particle being greater than described first particle diameter or particle size range.
The method of 17. any one of claim 1 to 16, it to comprise from described diamond lattic structure leaching metals catalyzer further to desired depth.
The method of 18. any one of claim 1 to 10, wherein,
Described composite sheet has multiple surface, and one of them surface is working surface;
Described composite sheet has at least one contiguous described working surface, zone of dispersion containing described mixture, and at least one is containing the region of described mixture; With
Described method comprise further from described diamond lattic structure, from described at least one contain leaching catalyzer the zone of dispersion of described mixture.
The method of 19. any one of claim 1 to 10, wherein,
Described composite sheet has multiple surface, and one of them surface is working surface;
Described composite sheet has at least one contiguous described working surface, zone of dispersion containing described mixture, and not containing the region of described mixture; With
Described method comprise further from described diamond lattic structure, described at least one contain described mixture zone of dispersion and not containing described mixture both areas at least partially in leaching metals catalyzer.
20. drill bits comprising the main body with cut surface, described cut surface has the multiple cutting knifes be configured on it, each of described multiple cutting knife comprises the composite polycrystal-diamond be combined with substrate, and wherein said composite polycrystal-diamond obtains according to the method for any one of claim 1 to 19.
21. composite polycrystal-diamonds, it obtains according to the method for any one of claim 1 to 19.
22. for the cutting knife of drill bit, and described cutting knife has that be combined with substrate, obtained according to the method for any one of claim 1 to 19 PDC.
23. for the cutting knife of drill bit, described cutting knife comprises the substrate combined with polycrystalline diamond composite sheet (PDC), wherein said PDC comprises the integrated agglomerate showing the polycrystalline diamond that diamond-diamond combines, and described PDC is scattered with HCP seed crystal material at least in part.
The cutting knife of 24. claims 23, a part of wherein said PDC contains metallic catalyst, and a part of described PDC has the metallic catalyst of remarkable less amount.
The cutting knife of 25. claims 23, wherein said HCP seed crystal material intersperses among in PDC at least one zone of dispersion interior of contiguous described cutting knife working surface, and wherein said PDC has the region that at least one does not contain HCP seed crystal material.
The cutting knife of 26. claims 25, wherein metallic catalyst from least one zone of dispersion described in the PDC containing HCP seed crystal material at least partially removal to the desired depth relative to described working surface.
The cutting knife of 27. any one of claim 23 to 26, wherein said HCP seed crystal material has wurtzite crystal structure.
The cutting knife of 28. any one of claim 23 to 26, wherein said HCP seed crystal material is selected from the group be substantially made up of buergerite boron nitride, buergerite carborundum and lonsdaleite.
The cutting knife of 29. any one of claim 23 to 26, wherein said HCP seed crystal material comprises buergerite boron nitride.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261645833P | 2012-05-11 | 2012-05-11 | |
| US61/645,833 | 2012-05-11 | ||
| PCT/US2013/040422 WO2013170083A1 (en) | 2012-05-11 | 2013-05-09 | Diamond cutting elements for drill bits seeded with hcp crystalline material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104662251A true CN104662251A (en) | 2015-05-27 |
Family
ID=49551288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380036169.6A Pending CN104662251A (en) | 2012-05-11 | 2013-05-09 | Diamond cutting elements for drill bits seeded with HCP crystalline material |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2847413A4 (en) |
| CN (1) | CN104662251A (en) |
| CA (1) | CA2872871A1 (en) |
| IN (1) | IN2014DN09854A (en) |
| WO (1) | WO2013170083A1 (en) |
| ZA (1) | ZA201408477B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108368727A (en) * | 2015-12-14 | 2018-08-03 | 史密斯国际有限公司 | The cutting element that formed by combination of materials and the drill bit for including the cutting element |
| CN113039343A (en) * | 2018-11-26 | 2021-06-25 | 阿特拉钻孔技术有限合伙公司 | Drill bit for drilling earth and other hard materials |
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- 2013-05-09 CA CA2872871A patent/CA2872871A1/en not_active Abandoned
- 2013-05-09 WO PCT/US2013/040422 patent/WO2013170083A1/en active Application Filing
- 2013-05-09 CN CN201380036169.6A patent/CN104662251A/en active Pending
- 2013-05-09 EP EP13788488.8A patent/EP2847413A4/en not_active Withdrawn
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| US4334928A (en) * | 1976-12-21 | 1982-06-15 | Sumitomo Electric Industries, Ltd. | Sintered compact for a machining tool and a method of producing the compact |
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| CN108368727A (en) * | 2015-12-14 | 2018-08-03 | 史密斯国际有限公司 | The cutting element that formed by combination of materials and the drill bit for including the cutting element |
| CN113039343A (en) * | 2018-11-26 | 2021-06-25 | 阿特拉钻孔技术有限合伙公司 | Drill bit for drilling earth and other hard materials |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2872871A1 (en) | 2013-11-14 |
| EP2847413A1 (en) | 2015-03-18 |
| IN2014DN09854A (en) | 2015-08-07 |
| WO2013170083A1 (en) | 2013-11-14 |
| EP2847413A4 (en) | 2016-01-06 |
| ZA201408477B (en) | 2015-12-23 |
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