CN104659268A - Top-emitting white light organic light emitting device - Google Patents
Top-emitting white light organic light emitting device Download PDFInfo
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- CN104659268A CN104659268A CN201510029048.XA CN201510029048A CN104659268A CN 104659268 A CN104659268 A CN 104659268A CN 201510029048 A CN201510029048 A CN 201510029048A CN 104659268 A CN104659268 A CN 104659268A
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H—ELECTRICITY
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- H10K50/17—Carrier injection layers
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Abstract
The invention belongs to the field of organic light emitting devices, and particularly relates to a top-emitting white light organic light emitting device containing two or more light emitting layers. The top-emitting white light organic light emitting device adopting a forward-mounted structure is used as a research object, and a spectrum adjustment layer with hole injection and transmission functions is used as an adjustment object; by selection of a material and control of the material thickness, the top-emitting white light organic light emitting device has a specific optical thickness; by adjustment of the optical thickness of the spectrum adjustment layer and limitation to the light emitting layers and other functional layers, the top-emitting white light organic light emitting device adopting the forward-mounted structure is higher in spectral characteristic and efficiency performance.
Description
Technical field
The invention belongs to organic electroluminescence device field, relate to a kind of top emitting white light organic electroluminescent device particularly.
Background technology
Electro optical phenomenon as far back as 20th century the '30s be found, initial luminescent material is ZnS powder, has developed LED technology thus, has been applied in now on energy-conserving light source widely.And organic electroluminescent phenomenon is the people such as Pope in 1963 finds the earliest, they find that the single layer crystal of anthracene is under the driving of more than 100V voltage, can send faint blue light.Until organic fluorescent dye is made bi-layer devices in vacuum evaporation mode by the people such as doctor Deng Qingyun of Kodak in 1987, be less than the voltage of 10V at driving voltage under, external quantum efficiency reaches 1%, make electroluminescent organic material and device be provided with the possibility of practicality, from then on greatly promote the research of OLED material and device.
The technology that organic electroluminescence device (OLED) not only can be applied to display as a new generation but also can be applied to illumination receives to be paid close attention to widely.In display field, OLED and LCD (liquid crystal display) compares, have as wide in fast response time, visual angle, without the need to backlight, the plurality of advantages such as contrast is high, resolution is high; At lighting field, compared with LED (light-emitting diode), OLED also has as presented that continuous spectrum, color rendering index are high, the more plurality of advantages such as energy-conserving and environment-protective.
Existing OLED divides according to structure, is divided into bottom emitting device and top emitting device.The wherein OLED of bottom emitting device architecture, its light launched sends from substrate side, and it is subject to the impact of tft array on substrate, so the aperture opening ratio of bottom emitting display device is general lower.And the OLED of top emitting device architecture, its light launched sends from surface side, and it can not be subject to the impact of tft array on substrate, so the aperture opening ratio of top emitting display device is general higher, even can reach 100% in theory.Therefore, the OLED of top emitting device architecture has sizable advantage in performance, but its device structure design also has sizable difficulty accordingly.
Existing top emitting device architecture is a micro-cavity structure, and due to the existence of microcavity effect, the spectrum dominant wavelength of device, spectral width, chromaticity coordinates, color rendering index, efficiency, brightness all can occur change along with the existence of microcavity effect.For monochromatic top emitting device, wish that microcavity effect is stronger, because could realize higher efficiency and the color saturation of Geng Gao by means of microcavity effect just.But for white light top emitting device, wish that microcavity effect is more weak better, particularly for white light parts more than two luminescent layers.
In order to improve top emitting device because microcavity effect is on the impact of spectrum in prior art, carry out many research.As Chinese patent CN101359721A discloses a kind of scheme being regulated the spectrum of top emitting device by spectrum regulating course.Described spectrum regulating course makes a comment or criticism to put doping electron injecting layer in structure or/and cathode buffer layer, or the hole injection layer in inverted structure is or/and anode buffer layer, and the luminescent layer related in the program is single light-emitting layer.The program by the spectrum originally launching single wavelength in bottom emitting device being adjusted to the spectrum of two wavelength, thus realizes white light, two wavelength in this spectrum, and an intrinsic wavelength launched for luminescent layer, the spectrum in another long wave direction is resonance wavelength.Although realize white light by regulating the spectrum of single luminescent layer to be fine, but single luminescent layer generally can only use blue light-emitting layer, and compared with the emitting layer material of other color, blue-light-emitting layer material is the generally acknowledged material that efficiency is minimum, the life-span is the shortest in OLED field.Add resonance wavelength in the spectrum finally obtained and be in different positions from intrinsic wavelength, so the efficiency of device is also lower.Therefore, even if use this luminescent layer to realize white light, but the efficiency of its white light and life-span will be also the poorest, and the efficiency of white light and colourity also completely can not practical requirement.Therefore, how to reduce the impact of microcavity effect on the spectrum of multi-luminescent layer top emitting white light parts, the resonance spectrum how regulating microcavity that top emitting white light parts is launched is identical with the intrinsic spectrum that luminescent layer is launched, thus to realize higher efficiency be this area technical problem urgently to be resolved hurrily.
Summary of the invention
For this reason, technical problem to be solved by this invention is that in prior art, top emitting white light organic electroluminescent device is because microcavity effect is on the impact of spectrum and then the problem affecting its performance, and then a kind of top emitting white light organic electroluminescent device is provided, it has more rational spectrum property and demonstrates fabulous odds for effectiveness.
The invention provides a kind of top emitting white light organic electroluminescent device, it comprises substrate substrate, reflection anode, spectrum regulating course, luminescent layer, electron transfer layer and electron injecting layer, transparent cathode and optical coupling output layer from bottom to up successively;
Described luminescent layer at least comprises the first luminescent layer and the second luminescent layer;
Described spectrum regulating course is made up of the material with hole injection transmitting effect, makes it have the effect that transmission is injected in hole;
The optical thickness of described spectrum regulating course is 30nm-100nm;
The optical thickness of described luminescent layer is 25nm-80nm;
Total optical thickness of described electron transfer layer and electron injecting layer is 30nm-100nm;
Described optical thickness is the physical thickness of rete prepares the specific refractivity of material product with it;
The spectral wavelength that described top emitting white light organic electroluminescent device is launched is identical with the intrinsic spectral wavelength that luminescent layer is launched.
Preferably, the optical thickness of described spectrum regulating course is 40nm-70nm.
Further, the physical thickness of described spectrum regulating course is 10nm-70nm;
The material preparing described spectrum regulating course is selected under 400nm-700nm wavelength, and refractive index is the material of 1.4<n<2.4, extinction coefficient 0≤k<0.2.
Preferably, the material preparing described spectrum regulating course be prior art known there is the material that transmitting effect is injected in hole, namely the material for the preparation of hole injection layer and/or hole transmission layer well known in the prior art, specifically can be selected from thiophene derivants, benzothiophene derivative, indole derivatives, benzidine analog derivative, derivative of tri-arylamine group, dibenzofurans class, Benzophenanthrene derivative, the mixture of one or more in carbazoles derivative.
More excellent, the material preparing described spectrum regulating course comprises the material shown in following general formula (C):
Wherein, m, n are independent of each other is the integer of 0-3, and 0 < m+n≤3;
R
1, R
2be independently from each other the substituted or non-substituted arylamine group of C4-C40, the substituted or non-substituted carbazole group of C4-C40, the substituted or non-substituted benzothiophene group of C4-C40, one of them of the replacement of C4-C40 or non-substituted benzofuran group;
L is bridge linkage group, is selected from singly-bound, the substituted aromatic amines of C4-C40, the substituted carbazole of C4-C40, one of them of the substituted benzene bithiophene of C4-C40, oxygen atom, nitrogen-atoms or sulphur atom;
R
3-R
10be independently from each other H atom, the aromatic group of the acyclic straight of C1-C20 or branched hydrocarbyl or C6-C30, or adjacent two groups connect into ring, form aphthothiophenes derivative.
Further, the material of the spectrum regulating course described in preparation is selected from the material with following structure:
Wherein, Ar
1-Ar
21independent of each other is the aryl of substituted or unsubstituted C6-C50;
L
1-L
9independent of each other is the arlydene of substituted or unsubstituted C6-C50.
Preferably, the material of the spectrum regulating course described in preparation comprises:
Further, described spectrum regulating course is one or more layers.
Organic electroluminescence device of the present invention is applicable to the device of multiple light center, and described luminescent layer also comprises the 3rd luminescent layer.
Independent of each otherly between described first luminescent layer, the second luminescent layer and the 3rd luminescent layer be provided with wall.
Described first luminescent layer, the second luminescent layer, the 3rd luminescent layer, independent of each other is blue light-emitting layer or green light emitting layer or red light emitting layer.
Described first luminescent layer, the second luminescent layer, the 3rd luminescent layer, independent of each other is that fluorescence radiation or phosphorescence are luminous.
Described substrate substrate is glass, plastics, stainless steel or silicon chip.
Described reflection anode is Ag layer, Al layer, Cr layer, Mo layer; Or be bilayer or the sandwich construction of Ag layer, Al layer, Cr layer, Mo layer and ITO.
Described transparent cathode is Ag layer, Al layer, or the doped layer of Mg and Ag, or is the doped layer of Mg and Ag, adds thereafter one deck Ag layer.
Top emitting white light organic electroluminescent device of the present invention, makes every effort to make described top illuminating device to have spectrum property close to bottom emitting structure devices, possesses again the odds for effectiveness of top emitting device simultaneously.Top emitting white light organic electroluminescent device of the present invention is particularly applicable to the use of property regulation of top emitting white light OLED device of two luminescence center, three luminescence centers, is more conducive to improving color rendering index.
Top emitting white light organic electroluminescent device of the present invention is just to put the top emitting white light organic electroluminescent device of structure for research object, there is the spectrum regulating course of hole injection and transmitting effect for controlled plant, by making it have specific optical thickness to the selection of its material and the control of material thickness; Described top emitting white light organic electroluminescent device is made to show good spectral signature and efficiency performance.
Top emitting white light organic electroluminescent device of the present invention, by controlling the thickness of described spectrum regulating course, and the restriction to luminescent layer and other functional layer, it is made to reach the spectrum property of bottom emitting organic electroluminescence device, possess again the efficiency of top emitting device simultaneously, there is performance advantage more comprehensively.This is because by restriction of the present invention, the spectrum that top emitting white light parts is launched is in identical position with the intrinsic spectrum that bottom emitting white light parts is launched, so just achieve good spectral characteristic, achieves higher efficiency simultaneously.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation just putting the top emitting white light organic electroluminescent device of structure of the present invention;
Fig. 2 is in embodiment 1, the electroluminescent spectrum figure of bottom emitting white light parts D1 and top emitting white light parts 1-2 and 1-4; 1 be blue emission peak, 2 be green emission peak in figure, 3 for red emission peak.
Embodiment
In view of the excellent properties that end light-emitting organic electroluminescent device shows in this feature of spectral width, the technique effect of the following each embodiment of the present invention is made every effort to obtain and is advisable with the akin spectral width of end light-emitting organic electroluminescent device.
The material used in the following each device architecture of the present invention comprises:
Embodiment 1
As shown in Figure 1, of the present inventionly just putting structure top emitting white light organic electroluminescent device, it comprises substrate substrate 100 from bottom to up successively, reflection anode 101, spectrum regulating course 102, first luminescent layer 103, second luminescent layer the 104, three luminescent layer 105, electron transfer layer 106, electron injecting layer 107, semitransparent cathode 108 and optical coupling output layer 109.Wherein,
Described substrate substrate is glass; Described reflection anode is Ag layer; Described semitransparent cathode is the doped layer of Mg and Ag, and adds one deck Ag layer below.Described electron transfer layer is
bphen, described electron injecting layer is LiF.Described first luminescent layer, second luminescent layer, the luminescent material of the 3rd luminescent layer is respectively host-1 doping RD-1, host-2 doping GD-1, BH-1 doping BD-1, corresponding doping content is respectively 5wt%, 15wt%, 5wt%, and control described first luminescent layer respectively, second luminescent layer, the physical thickness of the 3rd luminescent layer is respectively 5nm, 5nm, 15nm, makes total optical thickness of described luminescent layer be within the scope of 25-80nm.Described first luminescent layer, the second luminescent layer, the 3rd luminescent layer are respectively red light emitting layer, green light emitting layer and blue light-emitting layer.Described first luminescent layer, the second luminescent layer are that phosphorescence is luminous, and the 3rd luminescent layer is fluorescence radiation.
Described spectrum regulating course is made up of the compound 1-7 of the compound 1-6 and hole transport effect with hole injection effect, and wherein the refractive index of compound 1-6 is the refractive index of 1.6 (550nm), compound 1-7 is 1.65 (550nm); Described spectrum regulating course is the double-decker be made up of compound 1-6 and compound 1-7 respectively, the physical thickness controlling described spectrum regulating course in following device 1-1,1-2,1-3 is respectively compound 1-6 (6nm)/compound 1-7 (12nm), compound 1-6 (15.6nm)/compound 1-7 (15nm), compound 1-6 (43nm)/compound 1-7 (18nm), makes the optical thickness of spectrum regulating course described in each device be respectively 30nm, 50nm and 100nm.
Described in the present embodiment, organic electroluminescence device is prepared as follows:
1, by the ultrasonic detergent boiled and deionized water ultrasonic method, glass substrate is cleaned, and dry under being placed on infrared lamp;
2, aforesaid substrate is placed in vacuum chamber, is evacuated to 1 × 10
-5pa, on glass, evaporation one deck Ag layer is as reflection anode, and thickness is 150nm;
3, the above-mentioned glass substrate with reflection anode continues to be placed in vacuum chamber, is 1 × 10 in vacuum degree
-5under the condition of Pa, evaporation spectrum regulating course on above-mentioned reflection anode tunic, speed is 0.1nm/s, and evaporation thickness is determined according to the thickness determined in embodiment and comparative example;
4, then evaporation luminescent layer 1, luminescent layer 2, luminescent layer 3, the method that every layer of luminescent layer adopts double source to steam altogether, speed is 0.1nm/s, and evaporation thickness and concentration are determined according to the thickness determined in embodiment and comparative example and concentration;
5, then evaporation one deck electron transfer layer, evaporation rate is 0.2nm/s, and evaporation thickness is determined according to the thickness determined in embodiment and comparative example;
6, on electron transfer layer, then continue evaporation LiF layer, evaporation rate is 0.01 ~ 0.02nm/s, and thickness is 0.5nm;
7, then, the translucent negative electrode of evaporation on above-mentioned layer, Mg Ag doped, 4 to 1, total thickness 5nm, evaporation one deck Ag more thereafter, thickness is 12nm, evaporation rate 0.1nm/S.If bottom emitting device, then negative electrode evaporating Al, thickness 150nm.
The present embodiment for three luminescence center top emitting white light parts, wherein,
The device architecture of device 1-1,1-2,1-3 is: glass/Ag (150nm)/compound 1-6/ compound 1-7/ luminescent layer 1-1 (5nm)/luminescent layer 1-2 (5nm)/luminescent layer 1-3 (15nm)/Bphen (20nm)/LiF (0.5nm)/Mg:Ag (4nm:1nm)/Ag (12nm)/CPL (40nm).
The device architecture of device 1-4,1-5 is: glass/Ag (150nm)/compound 1-6/ compound 1-7/ luminescent layer 1-1 (5nm)/luminescent layer 1-2 (5nm)/luminescent layer 1-3 (15nm)/Bphen (20nm)/LiF (0.5nm)/Mg:Ag (4nm:1nm)/Ag (12nm)/CPL (40nm); Compound 1-6 respectively in control device 1-4 and 1-5 and the optics gross thickness of compound 1-7 are respectively 120nm and 20nm.
The device architecture of device D1 is bottom emitting device: glass/ITO (150nm)/compound 1-6 (43nm)/compound 1-7 (18nm)/luminescent layer 1-1 (5nm)/luminescent layer 1-2 (5nm)/luminescent layer 1-3 (15nm)/Bphen (20nm)/LiF (0.5nm)/Al (150nm).
Thickness in above-mentioned device architecture is physical thickness.
Carry out its Performance Detection to above-mentioned each device, detect data and see the following form 1, the electroluminescent spectrum figure of described bottom emitting white light parts D1 and top emitting white light parts 1-2 and 1-4 as shown in Figure 2.
The embodiment data of table 1 three luminescence center device
Above-mentioned data display, with the top emitting white light parts just putting structure of three luminescence centers, when the optical thickness x of spectrum regulating course is 30-100nm, the chromaticity coordinates of top emitting white light parts and the chromaticity coordinates of bottom emitting white light parts closely, illustrate that the spectrum that top emitting white light parts is launched is almost identical with the intrinsic spectrum that bottom emitting white light parts is launched.Especially, when its optical thickness is 50nm, except the chromaticity coordinates of top emitting white light parts is close to the chromaticity coordinates of bottom emitting device, and also have superiority in the efficiency of device.When the optical thickness of spectrum regulating course exceedes the scope of the application's setting, the decrease in efficiency of top emitting white light parts is a lot, and device performance is in a disadvantageous position greatly, and has occurred extrinsic glow peak in spectrum.In the electroluminescent spectrum figure of Fig. 2, glow peak wavelength in bottom emitting device D1 spectrum substantially identical with the glow peak wavelength in device 1-2 spectrum the position of the emission peak shown in 1,2,3 (in the figure), and the emission spectrum wavelength of device 1-4 is not identical with intrinsic spectral wavelength, have also appeared extrinsic glow peak (irising out part in figure), this is because the optical thickness of spectrum regulating course is beyond the thickness in the application, microcavity effect is stronger, there is the glow peak of resonance, although spectrum has broadened, efficiency has declined greatly.
Embodiment 2
Described in the present embodiment, top emitting white light organic electroluminescent device is identical with embodiment 1, is and just puts structure, and its difference is only, into two luminescence center structure, namely only to comprise the first luminescent layer and the second luminescent layer.Described first luminescent layer and the second luminescent layer are respectively blue light-emitting layer and Yellow luminous layer.Described first luminescent layer and described second luminescent layer are fluorescence radiation.Described first luminescent layer, the luminescent material of the second luminescent layer is respectively BH-1 doping BD-1, host-3 doping YD-1, corresponding doping content is respectively 5wt%, 3wt%, and control described first luminescent layer respectively, the physical thickness of the second luminescent layer is respectively 10nm and 20nm, makes total optical thickness of described luminescent layer within the scope of 25nm-80nm.
Described spectrum regulating course is made up with the material compound 1-11 with hole transport effect of the material compound 1-9 with hole injection effect, wherein the refractive index of compound 1-9 is the refractive index of 1.71 (470nm), compound 1-11 is 1.62 (470nm); Described spectrum regulating course is the double-decker be made up of compound 1-9 and compound 1-11 respectively, the physical thickness controlling described spectrum regulating course respectively in following device 2-1,2-2,2-3 sees the following form, and makes the optics gross thickness of described spectrum regulating course be respectively 30nm, 50nm and 100nm.
Described in the present embodiment, the preparation method of each device is also identical with embodiment 1.
The present embodiment for two luminescence center top emitting white light parts, wherein,
The device architecture of device 2-1,2-2,2-3 is: glass/Ag (150nm)/compound 1-9/ compound 1-11/ luminescent layer 2-1 (10nm)/luminescent layer 2-2 (20nm)/Bphen (20nm)/LiF (0.5)/Mg:Ag (4nm:1nm)/Ag (12nm)/CPL (40nm).
The device architecture of device 2-4,2-5 is: glass/Ag (150nm)/compound 1-9/ compound 1-11/ luminescent layer 2-1 (10nm)/luminescent layer 2-2 (20nm)/Bphen (20nm)/LiF (0.5nm)/Mg:Ag (4nm:1nm)/Ag (12nm)/CPL (40nm).Wherein in control period 2-4,2-5, the optics gross thickness of spectrum regulating course is respectively 130nm and 18nm.
The device architecture of device D2 is bottom emitting device: glass/ITO/ compound 1-9 (14nm)/compound 1-11 (16nm)/luminescent layer 2-1 (10nm)/luminescent layer 2-2 (20nm)/Bphen (20nm)/LiF (0.5nm)/Al (150nm).
Thickness in above-mentioned device architecture is physical thickness.
Its Performance Detection is carried out to above-mentioned each device, detects data and see the following form 2.
The embodiment data of table 2 pair luminescence center device
Above-mentioned data display, with the top emitting white light parts just putting structure of two luminescence center, when the optical thickness x of spectrum regulating course is 30-100nm, the chromaticity coordinates of top emitting white light parts and the chromaticity coordinates of bottom emitting white light parts closely, illustrate that the spectrum that top emitting white light parts is launched is almost identical with the intrinsic spectrum that bottom emitting white light parts is launched.Especially, when its optical thickness is 50nm, except the chromaticity coordinates of top emitting white light parts is close to the chromaticity coordinates of bottom emitting device, and in the efficiency of device, also there is higher advantage.When the optical thickness of spectrum regulating course is not when the scope of the application's setting, the decrease in efficiency of top emitting white light parts is a lot, and device performance is in a disadvantageous position greatly.
Embodiment 3
The structure of top emitting white light organic electroluminescent device described in the present embodiment and preparation method are all identical with embodiment 2, are and just put structure, and its difference is only that spectrum regulating course is different.
Spectrum regulating course described in the present embodiment is individual layer or bilayer, doping single layer structure, or doping double-decker, and the optical thickness all controlling described spectrum regulating course is 50nm.Described spectrum regulating course the selection of material comprises compound 1-18 or 1-20, and the refractive index of described compound 1-18 or 1-20 is 1.59 (470nm), and concrete Material selec-tion sees the following form 3.
Described first luminescent layer, the second luminescent layer are respectively blue light-emitting layer, Yellow luminous layer.Described first luminescent layer, the second luminescent layer are fluorescence radiation.
The present embodiment for two luminescence center top emitting white light parts, wherein,
The device architecture of device 3-1,3-2,3-3,3-4 is: glass/Ag (150nm)/spectrum regulating course/luminescent layer 3-1 (10nm)/luminescent layer 3-2 (20nm)/Bphen (20nm)/LiF (0.5nm)/Mg:Ag (4nm:1nm)/Ag (12nm))/CPL (40nm); Each device difference is only,
The spectrum regulating course of device 3-1 is the single layer structure of compound 1-18;
The spectrum regulating course of device 3-2 is the double-decker of compound 1-18/ compound 1-20;
The spectrum regulating course of device 3-3 is doping single layer structure, i.e. the single layer structure of compound 1-18 doped compound 1-20 formation, and the mass ratio of compound 1-18 and 1-20 is 2:1;
The spectrum regulating course of device 3-4 is doping double-decker, i.e. compound 1-18 doping HAT (CN) 6, and the double-decker that compound 1-20 is formed respectively, wherein the mass ratio of compound 1-18 and HAT (CN) 6 is 100:2.
The device architecture of device D3 is: glass/ITO/ compound 1-18 (31.5nm)/luminescent layer 3-1 (10nm)/luminescent layer 3-2 (20nm)/Bphen (20nm)/LiF (0.5nm)/Al (150nm).
Its Performance Detection is carried out to above-mentioned each device, detects data and see the following form 3.
The embodiment data of table 3 pair luminescence center device
Above-mentioned data display, with the top emitting white light parts just putting structure of two luminescence center, when the optical thickness x of spectrum regulating course is 50nm, spectrum regulating course can be single layer structure, also can be double-decker, double-decker can also one deck be undoped, and another layer is doped layer.Its performance finally showed not only has the odds for effectiveness of top emitting device, and its spectrum property is close to the performance of bottom emitting device.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (10)
1. a top emitting white light organic electroluminescent device, is characterized in that:
Comprise substrate substrate, reflection anode, spectrum regulating course, luminescent layer, electron transfer layer and electron injecting layer, transparent cathode and optical coupling output layer from bottom to up successively;
Described luminescent layer at least comprises the first luminescent layer and the second luminescent layer;
Described spectrum regulating course is made up of the material with hole injection transmitting effect, makes it have the effect that transmission is injected in hole;
The optical thickness of described spectrum regulating course is 30nm-100nm;
The optical thickness of described luminescent layer is 25nm-80nm;
Total optical thickness of described electron transfer layer and electron injecting layer is 30nm-100nm;
Described optical thickness is the physical thickness of rete prepares the specific refractivity of material product with it;
The spectral wavelength that described top emitting white light organic electroluminescent device is launched is identical with the intrinsic spectral wavelength that luminescent layer is launched.
2. top emitting white light organic electroluminescent device according to claim 1, is characterized in that,
The optical thickness of described spectrum regulating course is 40nm-70nm.
3. top emitting white light organic electroluminescent device according to claim 1 and 2, is characterized in that,
The physical thickness of described spectrum regulating course is 10nm-70nm;
The material preparing described spectrum regulating course is selected under 400nm-700nm wavelength, and refractive index is the material of 1.4<n<2.4, extinction coefficient 0≤k<0.2.
4. according to the arbitrary described top emitting white light organic electroluminescent device of claim 1-3, it is characterized in that, the material preparing described spectrum regulating course is selected from thiophene derivants, benzothiophene derivative, indole derivatives, benzidine analog derivative, derivative of tri-arylamine group, dibenzofurans class, Benzophenanthrene derivative, the mixture of one or more in carbazoles derivative.
5. top emitting white light organic electroluminescent device according to claim 4, is characterized in that, the material of the spectrum regulating course described in preparation comprises the material shown in following general formula (C):
Wherein, m, n are independent of each other is the integer of 0-3, and 0 < m+n≤3;
R
1, R
2be independently from each other the substituted or non-substituted arylamine group of C4-C40, the substituted or non-substituted carbazole group of C4-C40, the substituted or non-substituted benzothiophene group of C4-C40, one of them of the replacement of C4-C40 or non-substituted benzofuran group;
L is bridge linkage group, is selected from singly-bound, the substituted aromatic amines of C4-C40, the substituted carbazole of C4-C40, one of them of the substituted benzene bithiophene of C4-C40, oxygen atom, nitrogen-atoms or sulphur atom;
R
3-R
10be independently from each other H atom, the aromatic group of the acyclic straight of C1-C20 or branched hydrocarbyl or C6-C30, or adjacent two groups connect into ring, form aphthothiophenes derivative.
6. top emitting white light organic electroluminescent device according to claim 4, is characterized in that, the material of the spectrum regulating course described in preparation is selected from the material with following structure:
Wherein, Ar
1-Ar
21independent of each other is the aryl of substituted or unsubstituted C6-C50;
L
1-L
9independent of each other is the arlydene of substituted or unsubstituted C6-C50.
7. the top emitting white light organic electroluminescent device according to claim 5 or 6, is characterized in that, the material of the spectrum regulating course described in preparation comprises:
8., according to the arbitrary described top emitting white light organic electroluminescent device of claim 1-7, it is characterized in that, described spectrum regulating course is one or more layers.
9., according to the arbitrary described top emitting white light organic electroluminescent device of claim 1-8, it is characterized in that, described luminescent layer also comprises the 3rd luminescent layer.
10. top emitting white light organic electroluminescent device according to claim 9, is characterized in that, independent of each otherly between described first luminescent layer, the second luminescent layer and the 3rd luminescent layer is provided with wall.
Priority Applications (1)
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|---|---|---|---|
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| CN105949443A (en) * | 2016-04-21 | 2016-09-21 | 复旦大学 | Fused aza-heterocyclic aromatic hydrocarbon porous framework of two-dimensional lamellar structure, and preparation method and application thereof |
| WO2017101687A1 (en) * | 2015-12-15 | 2017-06-22 | 昆山工研院新型平板显示技术中心有限公司 | Organic light-emitting display device and display apparatus |
| CN109088010A (en) * | 2018-08-24 | 2018-12-25 | 云南大学 | A kind of silver magnesium alloy electrode and a kind of Organic Light Emitting Diode |
| CN109962165A (en) * | 2017-12-22 | 2019-07-02 | 昆山国显光电有限公司 | A kind of organic electroluminescence device |
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| CN111785849A (en) * | 2020-07-14 | 2020-10-16 | 长春海谱润斯科技有限公司 | Top-emitting organic electroluminescent device with covering layer |
| CN114883506A (en) * | 2022-05-06 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Perovskite light emitting diode device, preparation method thereof and display device |
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| WO2017101687A1 (en) * | 2015-12-15 | 2017-06-22 | 昆山工研院新型平板显示技术中心有限公司 | Organic light-emitting display device and display apparatus |
| CN106887444A (en) * | 2015-12-15 | 2017-06-23 | 昆山工研院新型平板显示技术中心有限公司 | Organic light emitting display and display device |
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| CN105949443A (en) * | 2016-04-21 | 2016-09-21 | 复旦大学 | Fused aza-heterocyclic aromatic hydrocarbon porous framework of two-dimensional lamellar structure, and preparation method and application thereof |
| CN109962165A (en) * | 2017-12-22 | 2019-07-02 | 昆山国显光电有限公司 | A kind of organic electroluminescence device |
| CN109962165B (en) * | 2017-12-22 | 2020-09-01 | 昆山国显光电有限公司 | Organic electroluminescent device |
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| CN109088010A (en) * | 2018-08-24 | 2018-12-25 | 云南大学 | A kind of silver magnesium alloy electrode and a kind of Organic Light Emitting Diode |
| CN110845501A (en) * | 2018-12-10 | 2020-02-28 | 广州华睿光电材料有限公司 | Arylamine compound and application thereof in organic electronic device |
| CN111785849A (en) * | 2020-07-14 | 2020-10-16 | 长春海谱润斯科技有限公司 | Top-emitting organic electroluminescent device with covering layer |
| CN114883506A (en) * | 2022-05-06 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Perovskite light emitting diode device, preparation method thereof and display device |
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