CN104638189A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN104638189A CN104638189A CN201310562515.6A CN201310562515A CN104638189A CN 104638189 A CN104638189 A CN 104638189A CN 201310562515 A CN201310562515 A CN 201310562515A CN 104638189 A CN104638189 A CN 104638189A
- Authority
- CN
- China
- Prior art keywords
- layer
- electroluminescence device
- organic electroluminescence
- preparation
- inorganic barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an organic light-emitting device. The organic light-emitting device comprises an anode conductive substrate, an organic light-emitting functional layer, a cathode layer and a packaging layer, and the organic light-emitting functional layer, the cathode layer and the packaging layer are sequentially overlapped on the surface of the anode conductive substrate. The organic light-emitting device is characterized in that the packaging layer comprises a protection layer, an inorganic barrier layer, an organic silicon compound layer and a polyethylene terephthalate film, the protection layer, the inorganic barrier layer, the organic silicon compound layer and the polyethylene terephthalate film are sequentially overlapped on the surface of the cathode layer, the polyethylene terephthalate film and the anode conductive substrate form a closed space, and the organic light-emitting functional layer, the cathode layer, the protection layer, the inorganic barrier layer and the organic silicon compound layer are contained in the closed space. The minimum vapor permeability of the organic light-emitting device is only 6.51*10-6g/m<2> per day after packaging is finished, and service life of the organic light-emitting device is longer than 13,000 hours (T70@1000cd/m<2>). The invention further provides a preparation method of the organic light-emitting device. The method is particularly applicable to packaging of flexible organic light-emitting devices.
Description
Technical field
The present invention relates to electronic device association area, particularly relate to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is that the luminous organic material preparing tens nanometer thickness on ito glass makes luminescent layer, has the metal electrode of low work function above luminescent layer.When electrode being added with voltage, luminescent layer just produces light radiation.
OLED have active illuminating, luminous efficiency high, low in energy consumption, light, thin, without advantages such as angle limitations, thought by insider to be most likely at the device of new generation following illumination and display device market occupying dominance.As a brand-new illumination and Display Technique, the ten years development in the past of OLED technology is swift and violent, achieves huge achievement.More and more throw light on due to the whole world and show producer and drop into research and development one after another, promoted the industrialization process of OLED greatly, make the growth rate of OLED industry surprising, reached the eve of scale of mass production at present.
Flexible product is the development trend of organic electroluminescence device, but the current ubiquity life-span is short, and the quality therefore encapsulated directly affects the life-span of device.Glass cover or crown cap is adopted to encapsulate in conventional art, its edge ultraviolet polymerization resin seal, but the glass cover used in this method or crown cap volume are often comparatively large, add the weight of device, and the method can not be applied to flexible organic electroluminescence gives out light the encapsulation of device.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.The encapsulated layer of this organic electroluminescence device can reduce steam, oxygen effectively to the erosion of organic electroluminescence device, and organic functional material and the electrode of protection organic electroluminescence device exempt from destruction, increase significantly to the life-span of flexible OLED devices.The inventive method is applicable to encapsulate the organic electroluminescence device prepared with conducting glass substrate, is also applicable to encapsulate the flexible organic electroluminescent device prepared for substrate with plastics or metal.The inventive method is particularly useful for encapsulating flexible organic electroluminescent device.
On the one hand, the invention provides a kind of organic electroluminescence device, comprise anode conducting substrate, the organic luminescence function layer be cascading at anode conducting substrate surface and cathode layer, and comprise encapsulated layer, described encapsulated layer is included in the protective layer that described cathode layer surface is cascading, inorganic barrier layer, organosilicon compound nitride layer and polyethylene terephthalate (PET) film, described polyethylene terephthalate (PET) film and described anode conducting substrate form enclosure space, described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are contained in described enclosure space,
The material of described protective layer is CuPc (CuPc), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 8-hydroxyquinoline aluminum (Alq
3), silicon monoxide (SiO), magnesium fluoride (MgF
2) and zinc sulphide (ZnS) in one;
The material of described inorganic barrier layer is for being alkaline earth oxide;
The material of described organosilicon compound nitride layer is the one in poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane], poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] and poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane].
Preferably, the thickness of described protective layer is 200nm ~ 300nm, and the thickness of described inorganic barrier layer is 15nm ~ 20nm, and the thickness of described organosilicon compound nitride layer is 1 μm ~ 1.5 μm.
Described protective layer can protect negative electrode to exempt from destruction in subsequent operation process, and the material of protective layer and cathode layer have good adhesive force, prevents extraneous steam and oxygen from penetrating into device inside cause damage from protective layer/cathode layer interface.
The material of described inorganic barrier layer is alkaline earth oxide, when adopting BeO as inorganic barrier layer material, because BeO molecular dimension is little, suitable with oxygen molecule size, make that the quantity of pin hole in BeO film is few and size is little, thus diffusing into of oxygen and steam can be stoped; And MgO, CaO, SrO, BaO have good oxygen barrier property and moisture absorption, by interacting with steam, steam is stoped to be diffused into device inside further.
Described organosilicon compound nitride layer has good elasticity and pliability, has good adhesive force with glass ceramics metal; There is excellent shear stability simultaneously, can vibration be absorbed, prevent Vibration propagation, alleviate the infringement shaking and device is brought.On the other hand, containing C-F key in molecule, C-F key is short, and bond angle is diminished, and fluorine atom to be spinned distribution along carbochain, therefore the stable fluorine atom of carbochain four periderm series of properties surrounded, and this has extremely strong protective effect to main chain.This special structure makes whole molecule very stiff, and molecule rotation potential barrier is very large, therefore has good weatherability and resistance to chemical corrosion; Fluoro Organosilicon Compounds has very low surface energy, so have good hydrophobic oleophobic characteristic.In addition, organosilicon compound nitride layer has good light transmission, can reduce the light loss of the organic electroluminescence device of top emitting or two-sided bright dipping.
Described encapsulated layer adopts protective layer/inorganic barrier layer/organosilicon compound nitride layer/polyethylene terephthalate film multi-layer compound structure; both the length of steam and oxygen infiltration " passage " can have been increased; strengthen the effect on barrier layer; layers of material iris action is excellent simultaneously; while exerting advantages of oneself; also have complementary advantages; thus effectively stop that external moisture, oxygen isoreactivity material are to the erosion of organic electroluminescence device; pliability and the anti-seismic performance of another aspect encapsulated layer are strengthened; prevent encapsulated layer from occurring crackle, extend the useful life of device.
Preferably, described anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, described anode conducting substrate is tin indium oxide (ITO) conducting glass substrate.
Preferably, described organic luminescence function layer comprises luminescent layer, and comprises the one in hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer.
Preferably, cathode layer can be non-transparent metals negative electrode (aluminium, silver, gold etc.) layer or transparent cathode (dielectric layer/metal level/dielectric layer etc., as ITO/Ag/ITO, ZnS/Ag/ZnS etc.).
More preferably, the material of described cathode layer is aluminium.
Be covered with polyethylene terephthalate film (PET) the edge-coating epoxy encapsulation glue of organosilicon compound nitride layer, by the mode drying sclerosis packaging plastic of ultraviolet light polymerization, described organic electroluminescence device is encapsulated in described polyethylene terephthalate film and substrate.
On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:
(1) prepare the anode pattern of organic electroluminescence device on the electrically-conductive backing plate surface of cleaning, form anode conducting substrate;
(2) adopt the method for vacuum evaporation to prepare organic luminescence function layer and cathode layer successively at anode conducting substrate surface, evaporation rate is
vacuum degree is 1 × 10
-5pa ~ 1 × 10
-3pa;
(3) prepare encapsulated layer on cathode layer surface, the preparation method of described encapsulated layer is as follows:
A () adopts the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is CuPc, N, N '-diphenyl-N, N '-two (1-naphthyl)-1, one in 1 '-biphenyl-4,4 '-diamines, oxine aluminium, silicon monoxide, magnesium fluoride and zinc sulphide;
B () prepares inorganic barrier layer on the protection layer by the mode of ald, the material of described inorganic barrier layer is alkaline earth oxide;
C () adopts the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on polyethylene terephthalate (PET) film, the material of described organosilicon compound nitride layer is poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane], one in poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] and poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane],
The covering of (d) polyethylene terephthalate (PET) film:
Polyethylene terephthalate (PET) film being covered with organosilicon compound nitride layer of step (c) gained is placed in inorganic barrier layer described in step (b) on the surface, then at the edge-coating epoxy encapsulation glue of described polyethylene terephthalate (PET) rete, adopt the mode drying sclerosis packaging plastic of ultraviolet light polymerization, by described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described polyethylene terephthalate (PET) film and the formation of anode conducting substrate, obtain organic electroluminescence device.
Preferably, the thickness of protective layer described in step (a) is 200nm ~ 300nm, and the thickness of inorganic barrier layer described in step (b) is 15nm ~ 20nm.
Preferably, the vacuum degree that vacuum evaporation process described in step (a) adopts is 8 × 10
-5pa ~ 3 × 10
-5pa, evaporation rate is
On cathode layer, prepare protective layer by the method for vacuum evaporation, the existence of protective layer can protect negative electrode to exempt from destruction in subsequent operation process.
Preferably, atomic layer deposition process described in step (b) adopts two (ethyl cyclopentadiene) alkaline earth metal compound and steam as predecessor, N
2as carrier gas; The general structure of described two (ethyl cyclopentadiene) alkaline earth metal compound is as indicated at a:
wherein, M is alkaline-earth metal.
Preferably, the technological parameter of atomic layer deposition process described in step (b) is: the injection length controlling two (ethyl cyclopentadiene) alkaline earth metal compound and steam is 10 ~ 20ms, the N of interval 5 ~ 10s between the two
2, described two (ethyl cyclopentadiene) alkaline earth metal compound, steam and N
2flow be 10 ~ 20sccm, control operating pressure is 10 ~ 50Pa, and depositing temperature is 40 ~ 60 DEG C.
The temperature of ald is low, to the structure of matrix and impact on physical properties little; The film density of growth is high, uniformity good and defect is few, the inorganic barrier layer of nanometer grade thickness, just effectively can intercept water Oxygen permeation and enter device inside, reach excellent packaging effect, this not only can conservation, reduce costs, also help the flexible package of device, also promote organic electroluminescence device simultaneously and develop to light-duty portability.
Preferably, in step (c), under inert atmosphere, spin coating 2 on polyethylene terephthalate film layer, 2,6,6-tetra-(trifluoromethyl)-1,2,6-oxa-disiloxane, 2,2,6,6-tetra-(pentafluoroethyl group)-1,2,6-oxa-disiloxane or 2,2,6,6-tetra-(seven fluoropropyls)-1,2,6-oxa-disiloxane, spin coating thickness is 1 μm ~ 1.5 μm, and rotating speed is 2000rpm ~ 4000rpm, then adopt ultraviolet light to be cured process, obtain organosilicon compound nitride layer.Described 2,2,6,6-tetra-(trifluoromethyl)-1,2,6-oxa-disiloxane, 2,2,6,6-tetra-(pentafluoroethyl group)-1,2,6-oxa-disiloxane and 2,2,6, the structural formula of 6-tetra-(seven fluoropropyls)-1,2,6-oxa-disiloxane is respectively as shown in P1, P2, P3:
Preferably, in step (c), in an inert atmosphere, the light intensity adopted when ultraviolet light polymerization is formed with organic silicon compound layer is 10mW/cm
2~ 15mW/cm
2, the time for exposure is 200s ~ 300s.
Adopt the method for photocuring to prepare organosilicon compound nitride layer, effective, low volatility, low toxicity, be applicable to large-scale production fast; The rete good leveling property of preparation, not easily produces lateral stress and shrinks, have good stress and to releive ability.
Preferably, in step (c), the wavelength that described employing ultraviolet light is cured process medium ultraviolet light is 365nm.
Preferably, the coating thickness of the glue of epoxy encapsulation described in step (d) is 1 μm ~ 1.5 μm, is then cured with ultraviolet light, and light intensity is 10mW/cm
2~ 15mW/cm
2, the time for exposure is 300s ~ 400s.
Preferably, in step (d), the wavelength that described employing ultraviolet light is cured process medium ultraviolet light is 365nm.
Preferably, described anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, described anode conducting substrate is tin indium oxide (ITO) conducting glass substrate.
Preferably, described organic luminescence function layer comprises luminescent layer, and comprises the one in hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer.
Preferably, cathode layer can be non-transparent metals negative electrode (aluminium, silver, gold etc.) layer or transparent cathode (dielectric layer/metal level/dielectric layer etc., as ITO/Ag/ITO, ZnS/Ag/ZnS etc.).
More preferably, the material of described cathode layer is aluminium.
The invention provides a kind of organic electroluminescence device and preparation method thereof, there is following beneficial effect:
(1) encapsulated layer of the present invention adopts protective layer/inorganic barrier layer/organosilicon compound nitride layer/polyethylene terephthalate film multi-layer compound structure; can have complementary advantages; effective stop external moisture, oxygen isoreactivity material are to the erosion of organic electroluminescence device; pliability and the anti-seismic performance of encapsulated layer can be strengthened on the other hand; prevent encapsulated layer from occurring crackle; make reach 13 the useful life of device, more than 000 hour (T70@1000cd/m
2).
(2) the present invention adopts the mode of ald to prepare inorganic barrier layer, and rete density is high, and defect is few, and the inorganic barrier layer of nanometer grade thickness just has remarkable barrier properties; Adopt the mode of photocuring to prepare organosilicon compound nitride layer, the good leveling property of rete, there is good stress and to releive ability.
(3) the inventive method is applicable to encapsulate the organic electroluminescence device prepared with conducting glass substrate, also be applicable to encapsulate the flexible organic electroluminescent device prepared for substrate with plastics or metal, the inventive method is particularly useful for encapsulating flexible organic electroluminescent device.
(4) preparation method's technique provided by the invention is simple, and automaticity is high, easy large area preparation and mass production.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic electroluminescence device in embodiment 1.
Embodiment
The following stated is the preferred embodiment of the present invention.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvement and adjustment, these improve and adjustment is also considered as in protection scope of the present invention.
Embodiment 1:
Fig. 1 is the structural representation of the organic electroluminescence device that the embodiment of the present invention 1 obtains.As shown in Figure 1, organic electroluminescence device prepared by the present embodiment, comprises the ITO conducting glass substrate 10, organic luminescence function layer 20, cathode layer 30 and the encapsulated layer 40 that are cascading.Wherein, described organic luminescence function layer 20 comprises the hole injection layer 21, hole transmission layer 22, luminescent layer 23, electron transfer layer 24 and the electron injecting layer 25 that are cascading from bottom to top, described encapsulated layer 40 comprises the protective layer 41 be cascading, inorganic barrier layer 42, organosilicon compound nitride layer 43 and PET film 44; ITO conducting glass substrate 10 and PET film 44 form enclosure space by packaging plastic sealing; hole injection layer 21; hole transmission layer 22; luminescent layer 23, electron transfer layer 24, electron injecting layer 25; cathode layer 30; protective layer 41, inorganic barrier layer 42, organosilicon compound nitride layer 43 is contained in this enclosure space.
A preparation method for organic electroluminescence device, comprises the following steps:
(1) ITO conducting glass substrate 10 pre-treatment: ITO conducting glass substrate 10 is put into acetone, ethanol, deionized water, ethanol successively, respectively ultrasonic cleaning 5 minutes, then dry up with nitrogen, stove-drying is stand-by; Surface activation process is carried out to the ito glass substrate 10 after cleaning, to increase the oxygen content of conductive surface layer, improves the work function of conductive layer surface; ITO conducting glass substrate 10 thickness is 100nm;
(2) preparation of organic luminescence function layer 20:
The preparation of hole injection layer 21: evaporation MoO on ITO conducting glass substrate 10
3the composite material that doping NPB obtains, MoO
3mass fraction shared in described composite material is 30%, and evaporation all adopts high vacuum coating equipment to carry out, and during evaporation, vacuum degree is 3 × 10
-5pa, evaporation rate is
obtain hole injection layer 20, thickness is 10nm;
The preparation of hole transmission layer 22: "-three (carbazole-9-base) triphenylamine (TCTA) is as hole mobile material, and evaporation TCTA on hole injection layer 21, vacuum degree is 3 × 10 in employing 4,4 ', 4
-5pa, evaporation rate is
evaporation thickness is 30nm;
The preparation of luminescent layer 23: evaporation luminescent layer 23 on hole transmission layer 22, luminescent layer 23 material of main part adopts 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), guest materials adopts three (2-phenylpyridines) to close iridium (Ir (ppy)
3), guest materials quality accounts for 5% of material of main part, and vacuum degree is 3 × 10
-5pa, evaporation rate is
evaporation thickness is 20nm;
The preparation of electron transfer layer 24: evaporation 4,7-diphenyl-1,10-phenanthroline (Bphen) is as electron transport material on luminescent layer 23, vacuum degree is 3 × 10
-5pa, evaporation rate is
evaporation thickness is 10nm;
The preparation of electron injecting layer 25: evaporation electron injection material forms electron injecting layer 25 on electron transfer layer 24, and the material of electron injecting layer 25 is CsN
3the composite material that doping Bphen obtains, CsN
3doping mass fraction in described composite material is 30%, and vacuum degree is 3 × 10
-5pa, evaporation rate is
evaporation thickness is 20nm;
(3) preparation of cathode layer 30: evaporation cathode layer 30 on electron injecting layer 25, cathode layer 30 adopts aluminium (Al), and thickness is 100nm, and evaporation vacuum degree is 5 × 10
-5pa, evaporation rate is
(4) preparation method of encapsulated layer 40 is as follows:
The preparation of (a) protective layer 41: adopt the method for vacuum evaporation to prepare protective layer 41 on cathode layer 30, the material of described protective layer 41 is CuPc (CuPc), vacuum degree 3 × 10
-5pa, evaporation rate
thickness is 200nm;
The preparation of (b) inorganic barrier layer 42: prepare inorganic barrier layer 42 by the mode of ald on protective layer 41, control operating pressure is 10Pa, and depositing temperature is 40 DEG C; The material of described inorganic barrier layer 42 is BeO; Adopt two (ethyl cyclopentadiene) beryllium (Be (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Be (CpEt)
215ms is, between the two the N of interval 7s with the injection length of steam
2, flow is 15sccm, and thickness is 20nm;
The preparation of (c) organosilicon compound nitride layer 43: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer 43 in PET film 44, under inert atmosphere, spin coating 2,2 in described PET film 44,6,6-tetra-(trifluoromethyl)-1,2,6-oxa-disiloxane, spin coating thickness is 1.5 μm, rotating speed is 2000rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 15mW/cm
2, the time for exposure is 300s, and the material of the organosilicon compound nitride layer 43 obtained is poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane];
The covering of (d) PET film 44: in the PET film 44 edge-coating packaging plastic being covered with organosilicon compound nitride layer 43 of step (c) gained, thickness 1.5 μm, is cured with ultraviolet light (λ=365nm), light intensity 15mW/cm
2, time for exposure 400s; Described organic luminescence function layer 20, cathode layer 30, protective layer 41, inorganic barrier layer 42 and organosilicon compound nitride layer 43 are encapsulated in enclosure space that described PET film 44 and substrate 10 formed.
The BeO layer 42 that the encapsulated layer 40 of organic electroluminescence device prepared by the present embodiment comprises CuPc layer 41 that the thickness be cascading is 200nm, thickness is 20nm, thickness are poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane] layer 43 and the PET film 44 of 1.5 μm, and described encapsulated layer 40 be CuPc layer/BeO layer/gather [(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.51 × 10
-6g/m
2day, the life-span is 13,090 hour.
Embodiment 2:
A preparation method for organic electroluminescence device, comprises the following steps:
(1), (2), (3) are with embodiment 1;
(4) preparation method of encapsulated layer is as follows:
The preparation of (a) protective layer: adopt the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is NPB, vacuum degree 3 × 10
-5pa, evaporation rate
thickness 300nm;
The preparation of (b) inorganic barrier layer: prepare inorganic barrier layer on the protection layer by the mode of ald, control operating pressure is 50Pa, and depositing temperature is 60 DEG C; The material of described inorganic barrier layer is MgO; Adopt two (ethyl cyclopentadiene) magnesium (Mg (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Mg (CpEt)
220ms is, between the two the N of interval 10s with the injection length of steam
2, flow is 20sccm, and thickness is 19nm;
The preparation of (c) organosilicon compound nitride layer: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on a pet film, under inert atmosphere, spin coating 2 in described PET film, 2,6,6-tetra-(pentafluoroethyl group)-1,2,6-oxa-disiloxane, spin coating thickness is 1.2 μm, rotating speed is 3000rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 12mW/cm
2, the time for exposure is 260s, and the material of the organosilicon compound nitride layer 43 obtained is poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane];
The covering of (d) PET film: in the PET film edge-coating packaging plastic being covered with organosilicon compound nitride layer of step (c) gained, thickness 1.2 μm, is cured with ultraviolet light (λ=365nm), light intensity 13mW/cm
2, time for exposure 350s; Described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described PET film and substrate formation.
The MgO layer that the encapsulated layer of organic electroluminescence device prepared by the present embodiment comprises NPB layer that the thickness be cascading is 300nm, thickness is 19nm, thickness are poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] layer and the PET film of 1.2 μm, and described encapsulated layer is NPB layer/MgO layer/poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.52 × 10
-6g/m
2day, the life-span is 13,067 hour.
Embodiment 3:
A preparation method for organic electroluminescence device, comprises the following steps:
(1), (2), (3) are with embodiment 1;
(4) preparation method of encapsulated layer is as follows:
The preparation of (a) protective layer: adopt the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is Alq3, vacuum degree 3 × 10
-5pa, evaporation rate
thickness 250nm;
The preparation of (b) inorganic barrier layer: prepare inorganic barrier layer on the protection layer by the mode of ald, control operating pressure is 40Pa, and depositing temperature is 40 DEG C; The material of described inorganic barrier layer is CaO; Adopt two (ethyl cyclopentadiene) calcium (Ca (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Ca (CpEt)
210ms is, between the two the N of interval 5s with the injection length of steam
2, flow is 10sccm, and thickness is 18nm;
The preparation of (c) organosilicon compound nitride layer: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on a pet film, under inert atmosphere, spin coating 2 in described PET film, 2,6,6-tetra-(seven fluoropropyls)-1,2,6-oxa-disiloxane, spin coating thickness is 1 μm, rotating speed is 4000rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 10mW/cm
2, the time for exposure is 200s, and the material of the organosilicon compound nitride layer obtained is poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane];
The covering of (d) PET film: in the PET film edge-coating packaging plastic being covered with organosilicon compound nitride layer of step (c) gained, thickness 1.5 μm, is cured with ultraviolet light (λ=365nm), light intensity 15mW/cm
2, time for exposure 400s; Described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described PET film and substrate formation.
The CaO layer that the encapsulated layer of organic electroluminescence device prepared by the present embodiment comprises Alq3 layer that the thickness be cascading is 250nm, thickness is 18nm, thickness are poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane] layer and the PET film of 1 μm, and described encapsulated layer is Alq3 layer/CaO layer/poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.54 × 10
-6g/m
2day, the life-span is 13,046 hour.
Embodiment 4:
A preparation method for organic electroluminescence device, comprises the following steps:
(1), (2), (3) are with embodiment 1;
(4) preparation method of encapsulated layer is as follows:
The preparation of (a) protective layer: adopt the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is SiO, vacuum degree 5 × 10
-5pa, evaporation rate
thickness 200nm;
The preparation of (b) inorganic barrier layer: prepare inorganic barrier layer on the protection layer by the mode of ald, control operating pressure is 50Pa, and depositing temperature is 50 DEG C; The material of described inorganic barrier layer is SrO; Adopt two (ethyl cyclopentadiene) strontium (Sr (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Sr (CpEt)
215ms is, between the two the N of interval 7s with the injection length of steam
2, flow is 17sccm, and thickness is 16nm;
The preparation of (c) organosilicon compound nitride layer: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on a pet film, under inert atmosphere, spin coating 2 in described PET film, 2,6,6-tetra-(trifluoromethyl)-1,2,6-oxa-disiloxane, spin coating thickness is 1.5 μm, rotating speed is 2500rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 15mW/cm
2, the time for exposure is 300s, and the material of the organosilicon compound nitride layer obtained is poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane];
The covering of (d) PET film: in the PET film edge-coating packaging plastic being covered with organosilicon compound nitride layer of step (c) gained, thickness 1 μm, is cured with ultraviolet light (λ=365nm), light intensity 10mW/cm
2, time for exposure 300s; Described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described PET film and substrate formation.
The SrO layer that the encapsulated layer of organic electroluminescence device prepared by the present embodiment comprises SiO layer that the thickness be cascading is 200nm, thickness is 16nm, thickness are poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane] layer and the PET film of 1.5 μm, and described encapsulated layer is SiO layer/SrO layer/poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.55 × 10
-6g/m
2day, the life-span is 13,035 hour.
Embodiment 5:
A preparation method for organic electroluminescence device, comprises the following steps:
(1), (2), (3) are with embodiment 1;
(4) preparation method of encapsulated layer is as follows:
The preparation of (a) protective layer: adopt the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is MgF
2, vacuum degree 5 × 10
-5pa, evaporation rate
thickness 300nm;
The preparation of (b) inorganic barrier layer: prepare inorganic barrier layer on the protection layer by the mode of ald, control operating pressure is 45Pa, and depositing temperature is 45 DEG C; The material of described inorganic barrier layer is BaO; Adopt two (ethyl cyclopentadiene) barium (Ba (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Ba (CpEt)
215ms is, between the two the N of interval 7s with the injection length of steam
2, flow is 11sccm, and thickness is 15nm;
The preparation of (c) organosilicon compound nitride layer: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on a pet film, under inert atmosphere, spin coating 2 in described PET film, 2,6,6-tetra-(pentafluoroethyl group)-1,2,6-oxa-disiloxane, spin coating thickness is 1.1 μm, rotating speed is 2400rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 11mW/cm
2, the time for exposure is 220s, and the material of the organosilicon compound nitride layer obtained is poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane];
The covering of (d) PET film: in the PET film edge-coating packaging plastic being covered with organosilicon compound nitride layer of step (c) gained, thickness 1.2 μm, is cured with ultraviolet light (λ=365nm), light intensity 12mW/cm
2, time for exposure 330s; Described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described PET film and substrate formation.
It is the MgF of 300nm that the encapsulated layer of organic electroluminescence device prepared by the present embodiment comprises the thickness be cascading
2poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] layer and PET film that the BaO layer that layer, thickness are 15nm, thickness are 1.1 μm, described encapsulated layer is MgF
2layer/BaO layer/poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.56 × 10
-6g/m
2day, the life-span is 13,020 hour.
Embodiment 6:
A preparation method for organic electroluminescence device, comprises the following steps:
(1), (2), (3) are with embodiment 1;
(4) preparation method of encapsulated layer is as follows:
The preparation of (a) protective layer: adopt the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is ZnS, vacuum degree 8 × 10
-5pa, evaporation rate
thickness 250nm;
The preparation of (b) inorganic barrier layer: prepare inorganic barrier layer on the protection layer by the mode of ald, control operating pressure is 40Pa, and depositing temperature is 50 DEG C; The material of described inorganic barrier layer is BaO; Adopt two (ethyl cyclopentadiene) barium (Ba (CpEt)
2) and steam as predecessor, N
2as carrier gas; Control Ba (CpEt)
210ms is, between the two the N of interval 10s with the injection length of steam
2, flow is 15sccm, and thickness is 15nm;
The preparation of (c) organosilicon compound nitride layer: adopt the method for first spin coating post-exposure to prepare organosilicon compound nitride layer on a pet film, under inert atmosphere, spin coating 2 in described PET film, 2,6,6-tetra-(seven fluoropropyls)-1,2,6-oxa-disiloxane, spin coating thickness is 1.1 μm, rotating speed is 2200rpm, and then use ultraviolet light (λ=365nm) to be cured, light intensity is 11mW/cm
2, the time for exposure is 210s, and the material of the organosilicon compound nitride layer obtained is poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane];
The covering of (d) PET film: in the PET film edge-coating packaging plastic being covered with organosilicon compound nitride layer of step (c) gained, thickness 1.1 μm, is cured with ultraviolet light (λ=365nm), light intensity 11mW/cm
2, time for exposure 310s; Described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described PET film and substrate formation.
The BaO layer that the encapsulated layer of organic electroluminescence device prepared by the present embodiment comprises ZnS layer that the thickness be cascading is 250nm, thickness is 15nm, thickness are poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane] layer and the PET film of 1.1 μm, and described encapsulated layer is ZnS layer/BaO layer/poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane] layer/PET film multi-layer compound structure.
Be full of N
2in glove box, 20 ~ 25 DEG C of temperature, and water content and oxygen content be less than the condition of 1ppm under test the vapor permeability (WVTR) of the organic electroluminescence device after the present embodiment encapsulation, the vapor permeability of the organic electroluminescence device that result shows after the present embodiment encapsulation is 6.58 × 10
-6g/m
2day, the life-span is 13,000 hour.
Effect example
For the beneficial effect of valid certificates organic electroluminescence device of the present invention and preparation method thereof, the vapor permeability (WVTR) of test organic electroluminescence device, and test (the T70@1000cd/m in useful life of organic electroluminescence device
2), from original intensity 1000cd/m
2decay to the time needed for 70%.Vapor permeability and the useful life of the organic electroluminescence device of the embodiment of the present invention 1 ~ 6 preparation are as shown in table 1.
The vapor permeability of organic electroluminescence device prepared by table 1 embodiment 1 ~ 6 and useful life
As can be seen from Table 1, the vapor permeability (WVTR) of the organic electroluminescence device after encapsulation technology encapsulation of the present invention is all 10
-6g/m
2the day order of magnitude, is minimumly only 6.51 × 10
-6g/m
2day, useful life reaches 13, more than 000 hour (T70@1000cd/m
2).This is owing to the selection of encapsulated layer material and multilayer alternating structure, and extraneous oxygen and steam, through heavy stop, are difficult to enter device inside and cause erosion to organic electroluminescence device, so substantially prolongs the life-span of organic electroluminescence device.
To sum up, the encapsulated layer of organic electroluminescence device provided by the invention can reduce oxygen and steam effectively to the erosion of organic electroluminescence device, improves the life-span of organic electroluminescence device significantly, and metallic cathode can be protected to exempt from destruction.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, comprise anode conducting substrate, the organic luminescence function layer be cascading at anode conducting substrate surface and cathode layer, and comprise encapsulated layer, it is characterized in that, described encapsulated layer is included in the protective layer that described cathode layer surface is cascading, inorganic barrier layer, organosilicon compound nitride layer and polyethylene terephthalate film, described polyethylene terephthalate film and described anode conducting substrate form enclosure space, described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are contained in described enclosure space,
The material of described protective layer is the one in CuPc, N, N '-diphenyl-N, N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines, oxine aluminium, silicon monoxide, magnesium fluoride and zinc sulphide;
The material of described inorganic barrier layer is alkaline earth oxide;
The material of described organosilicon compound nitride layer is the one in poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane], poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] and poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane].
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described protective layer is 200nm ~ 300nm, and the thickness of described inorganic barrier layer is 15nm ~ 20nm, and the thickness of described organosilicon compound nitride layer is 1 μm ~ 1.5 μm.
3. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
(1) prepare the anode pattern of organic electroluminescence device on the electrically-conductive backing plate surface of cleaning, form anode conducting substrate;
(2) adopt the method for vacuum evaporation to prepare organic luminescence function layer and cathode layer successively at anode conducting substrate surface, evaporation rate is
vacuum degree is 1 × 10
-5pa ~ 1 × 10
-3pa;
(3) prepare encapsulated layer on cathode layer surface, the preparation method of described encapsulated layer is as follows:
A () adopts the method for vacuum evaporation to prepare protective layer on cathode layer, the material of described protective layer is CuPc, N, N '-diphenyl-N, N '-two (1-naphthyl)-1, one in 1 '-biphenyl-4,4 '-diamines, oxine aluminium, silicon monoxide, magnesium fluoride and zinc sulphide;
B () prepares inorganic barrier layer on the protection layer by the mode of ald, the material of described inorganic barrier layer is alkaline earth oxide;
C () adopts the method for first spin coating post-exposure in polyethylene terephthalate film, prepare organosilicon compound nitride layer, the material of described organosilicon compound nitride layer is poly-[(3-(two (trifluoromethyl) (methoxyl group) is silica-based) propyl group) two (trifluoromethyl) (methyl) silane], one in poly-[(3-(two (pentafluoroethyl group) (methoxyl group) is silica-based) propyl group) two (pentafluoroethyl group) (methyl) silane] and poly-[(3-(two (seven fluoropropyls) (methoxyl groups) are silica-based) propyl group) two (seven fluoropropyls) (methyl) silane],
The covering of (d) polyethylene terephthalate film:
The polyethylene terephthalate film being covered with organosilicon compound nitride layer of step (c) gained is placed in inorganic barrier layer described in step (b) on the surface; then at the edge-coating epoxy encapsulation glue of described polyethylene terephthalate film layer; adopt the mode drying sclerosis packaging plastic of ultraviolet light polymerization; described organic luminescence function layer, cathode layer, protective layer, inorganic barrier layer and organosilicon compound nitride layer are encapsulated in the enclosure space of described polyethylene terephthalate film and the formation of anode conducting substrate, obtain organic electroluminescence device.
4. the preparation method of organic electroluminescence device as claimed in claim 3, it is characterized in that, the thickness of protective layer described in step (a) is 200nm ~ 300nm, and the thickness of inorganic barrier layer described in step (b) is 15nm ~ 20nm.
5. the preparation method of organic electroluminescence device as claimed in claim 3, is characterized in that, the vacuum degree that vacuum evaporation process described in step (a) adopts is 8 × 10
-5pa ~ 3 × 10
-5pa, evaporation rate is
6. the preparation method of organic electroluminescence device as claimed in claim 3, is characterized in that, atomic layer deposition process described in step (b) adopts two (ethyl cyclopentadiene) alkaline earth metal compound and steam as predecessor, N
2as carrier gas; The general structure of described two (ethyl cyclopentadiene) alkaline earth metal compound is as indicated at a:
wherein, M is alkaline-earth metal.
7. the preparation method of organic electroluminescence device as claimed in claim 3, it is characterized in that, the technological parameter of atomic layer deposition process described in step (b) is: the injection length controlling two (ethyl cyclopentadiene) alkaline earth metal compound and steam is 10 ~ 20ms, the N of interval 5 ~ 10s between the two
2, described two (ethyl cyclopentadiene) alkaline earth metal compound, steam and N
2flow be 10 ~ 20sccm, control operating pressure is 10 ~ 50Pa, and depositing temperature is 40 ~ 60 DEG C.
8. the preparation method of organic electroluminescence device as claimed in claim 3, is characterized in that, in step (c), under inert atmosphere, spin coating 2 on polyethylene terephthalate film layer, 2,6,6-tetra-(trifluoromethyl)-1,2,6-oxa-disiloxane, 2,2,6,6-tetra-(pentafluoroethyl group)-1,2,6-oxa-disiloxane or 2,2,6,6-tetra-(seven fluoropropyls)-1,2,6-oxa-disiloxane, spin coating thickness is 1 μm ~ 1.5 μm, rotating speed is 2000rpm ~ 4000rpm, then adopts ultraviolet light to be cured process, obtains organosilicon compound nitride layer.
9. the preparation method of the organic electroluminescence device as described in claim 3 and 8, is characterized in that, in step (c), the light intensity adopted when ultraviolet light polymerization is formed with organic silicon compound layer is 10mW/cm
2~ 15mW/cm
2, the time for exposure is 200s ~ 300s.
10. the preparation method of organic electroluminescence device as claimed in claim 3, it is characterized in that, the coating thickness of the glue of epoxy encapsulation described in step (d) is 1 μm ~ 1.5 μm, is then cured with ultraviolet light, and light intensity is 10mW/cm
2~ 15mW/cm
2, the time for exposure is 300s ~ 400s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310562515.6A CN104638189A (en) | 2013-11-12 | 2013-11-12 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310562515.6A CN104638189A (en) | 2013-11-12 | 2013-11-12 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104638189A true CN104638189A (en) | 2015-05-20 |
Family
ID=53216692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310562515.6A Pending CN104638189A (en) | 2013-11-12 | 2013-11-12 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104638189A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198955A (en) * | 2017-12-14 | 2018-06-22 | 安徽熙泰智能科技有限公司 | The vacuum abutted method of full-color silicon substrate OLED micro-display devices |
| CN108346746A (en) * | 2017-01-22 | 2018-07-31 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
| US10096793B2 (en) | 2015-07-17 | 2018-10-09 | Boe Technology Group Co., Ltd | Package for device to be packaged, manufacturing method thereof, and OLED apparatus comprising the package |
| CN109155343A (en) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | The deposition method of the protective film of light emitting diode |
| CN109244261A (en) * | 2017-07-11 | 2019-01-18 | 上海和辉光电有限公司 | A kind of display panel, display device and display panel production method |
| CN110444685A (en) * | 2019-07-30 | 2019-11-12 | 昆山维信诺科技有限公司 | A kind of OLED display screen and preparation method thereof |
-
2013
- 2013-11-12 CN CN201310562515.6A patent/CN104638189A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10096793B2 (en) | 2015-07-17 | 2018-10-09 | Boe Technology Group Co., Ltd | Package for device to be packaged, manufacturing method thereof, and OLED apparatus comprising the package |
| CN109155343A (en) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | The deposition method of the protective film of light emitting diode |
| CN108346746A (en) * | 2017-01-22 | 2018-07-31 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
| CN108346746B (en) * | 2017-01-22 | 2019-10-25 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
| CN109244261A (en) * | 2017-07-11 | 2019-01-18 | 上海和辉光电有限公司 | A kind of display panel, display device and display panel production method |
| CN108198955A (en) * | 2017-12-14 | 2018-06-22 | 安徽熙泰智能科技有限公司 | The vacuum abutted method of full-color silicon substrate OLED micro-display devices |
| CN110444685A (en) * | 2019-07-30 | 2019-11-12 | 昆山维信诺科技有限公司 | A kind of OLED display screen and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104638189A (en) | Organic light-emitting device and preparation method thereof | |
| CN103730598A (en) | Organic light-emitting device and preparation method thereof | |
| CN103811668A (en) | Organic electroluminescent device and method for producing same | |
| CN103730595A (en) | Organic light-emitting device and preparation method thereof | |
| CN103730594A (en) | Organic light-emitting device and preparation method thereof | |
| CN103855315A (en) | Organic light-emitting device and preparation method thereof | |
| CN103904230B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103730593A (en) | Organic light-emitting device and preparation method thereof | |
| CN104183742A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103855320B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103855316B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN104518134A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104518110A (en) | Organic light emitting diode device and preparation method thereof | |
| CN103904233B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103855321A (en) | Organic light-emitting device and preparation method thereof | |
| CN103904239A (en) | Organic light-emitting device and preparation method | |
| CN104103764A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN103855308B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN104518098A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103855319B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN104167506A (en) | Organic light emitting device and preparation method thereof | |
| CN103855317B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103855318A (en) | Organic light-emitting device and preparation method thereof | |
| CN104167493A (en) | Organic light emitting device and preparation method thereof | |
| CN104518120A (en) | Organic light-emitting device and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150520 |