CN104638101A - Method for preparing thermoelectric device and thermoelectric device - Google Patents
Method for preparing thermoelectric device and thermoelectric device Download PDFInfo
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- CN104638101A CN104638101A CN201310549191.2A CN201310549191A CN104638101A CN 104638101 A CN104638101 A CN 104638101A CN 201310549191 A CN201310549191 A CN 201310549191A CN 104638101 A CN104638101 A CN 104638101A
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Abstract
The invention relates to a method for preparing a thermoelectric device and a thermoelectric device, and provides a method for preparing a thermoelectric device. The method comprises the following steps: (a) providing a large number of thermoelectric material sheets or thermoelectric component sheets, wherein each sheet has at least one predetermined shape; (b) arranging the thermoelectric material sheets or thermoelectric component sheets into a predetermined combination, and connecting the thermoelectric material sheets or thermoelectric component sheets to form a thermoelectric material section or thermoelectric component section; (c) repeating step (b) to produce a large number of sections; and (d) connecting the large number of sections to produce a predetermined configuration for thermoelectric devices. The invention further provides a thermoelectric device.
Description
Technical field
The invention belongs to thermoelectric material and devices field, relate to a kind of technique simple, hold the manageable direct method preparing hollow thermoelectricity sample.More particularly, a kind of method and the thermoelectricity components and parts of preparing thermoelectricity components and parts are related to.
Background technology
Thermal transition can be electricity by pyroelectric technology, and vice versa.This eco-friendly technology has many advantages relative to other technology, such as mechanical parts thus use time noiselessness, maintenance capacity is few.Such as applied different in military, medical and space from former, the generating aspect of automobile and industrial waste heat has been transferred in pyroelectric technology application recently.Much industry and traffic process along with the used heat produced due to combustion of fossil fuel, the rising of fossil fuel price and the destruction of environment is facilitated to the effort improving energy efficiency and reduce CO2 emission.
Serious thing is that a large amount of used heat enters air, and the temperature of the overwhelming majority is lower than the temperature needed for general recovery generation technology.And thermoelectric power generation technology provides an opportunity that used heat is changed into electricity.Thermoelectric device has competitive advantage relating in the factors such as size, reliability and Maintenance free.
The realization of pyroelectric technology is completed by electrothermal module.At present, most electrothermal module is tabular, and N-shaped is connected with heat parallel connection by electricity series connection with p-type element, and all elements are between two pieces of ceramic wafers, and the effect of ceramic wafer is the fundamental strength of electric insulation and heat conduction and maintenance module.There are for three more than ten years in this configuration, is proved to be an extraordinary structure at refrigerating field.But this configuration is not suitable for thermoelectric power generation because of following reason.First, writing board shape is not suitable for radial heat flows, and in this case, many flat electrothermal modules must be attached to around cylindrical heat source, so electricity generation system becomes more complicated; The second, flat module is not suitable for being attached in the plane of large curved surface or injustice; 3rd, tabular module can not adapt to the surface of special-shaped thermal source very well, and thermo-contact is bad.So the electrothermal module that preparation is more easily applicable to heat source surface shape is extremely important.
In order to farthest meet the requirement of thermoelectric power generation, the novel thermoelectric generator of some software engineering researchers invent.Westinghouse Electric Corporation(Westinghouse electric corporation) first concept (Proceeding of4 proposed about tubulose electrothermal module
thintersoc Energy Couvers Eng.Conf.Washington DC, 1969, New York, 1969,300-307).Tubular modules comprises circular heat pile, interior heat conductor, electric insulation part and the material being connected thermoelectric pile.2007, Gao and Rowe [Min Gao and DM Rowe, the electrothermal module of Ring-structured thermoelectric module(ring structure), Semicond.Sci.Technol.2007,22,880-883] develop a kind of thermoelectric generation module of tubulose of novelty.This module comprises four circular thermoelectric elements, and performance can by power output along with difference variation represents.Whole device comprises two concentric tubes: interior pipe is a thermoelectricity conglomerate, and thermal source can flow through from center; Outer tube is a kind of plain end pipe, and cold fluid can be allowed to pass through.Author claims that the performance of tubulose electrothermal module compared with common tabular module, but can have advantage in the waste-heat power generation occasion of radial heat flows.US Patent No. 4056406 reports a kind of method can eliminating shear stress in tubular modules.US Patent No. 6096966 proposes tubular modules and solder can not be adopted to weld, thus this module can use at a relatively high temperature.WO2006/004059 and US2009/0133734A1 also reports similar tubulose electrothermal module.
But for the preparation of special-shaped thermoelectric element such as such as hexagon and polygon etc. (described element comprises intermediate layer and electrode), it is simply controlled that technical process is not yet developed in this area, the heterotype element size of preparation is accurate, the preparation method that surface quality is good.
Therefore, this area is simply controlled in the urgent need to developing a kind of technical process, and the heterotype element size of preparation is accurate, the method for the special-shaped thermoelectricity components and parts such as preparation such as hexagon and polygon etc. that surface quality is good.
Summary of the invention
The invention provides a kind of method preparing thermoelectricity components and parts and thermoelectricity components and parts of novelty, thus solve problems of the prior art.
On the one hand, the invention provides a kind of method preparing thermoelectricity components and parts, the method comprises:
A () provides a large amount of thermoelectric material chips or thermoelectric element sheet, every sheet has at least one predetermined shape;
B multiple thermoelectric material chips or thermoelectric element sheet are arranged in a predetermined combination by (), and connect described multiple thermoelectric material or thermoelectric element sheet to form a thermoelectric material section or thermoelectric element section;
C () repeats step (b) to produce a large amount of sections; And
D described section in a large number links together to produce the predetermined configuration that is used for thermoelectricity components and parts by ().
In one preferred embodiment, the method also comprises and forms each thermoelectric material chips or thermoelectric element sheet by carrying out sintering process to sintered powder to make each thermoelectric material chips or thermoelectric element sheet present described shape.
Another preferred embodiment in, described sintering process comprises sintered powder is placed in the mould being configured to described shape, and sintered powder is pressurizeed, be incubated and galvanization to prepare a large amount of thermoelectric material chips or thermoelectric element sheet.
Another preferred embodiment in, described sintered powder comprises at least following a kind of: (i) a kind of thermoelectricity composition; (ii) Bi
2te
3; (iii) PbTe; (iv) skutterudite; (v) Yb
0.3cO
4sb
12skutterudite; (vi) silicide thermoelectric material; (vii) Half-Heusler thermoelectric material; (viii) (GeTe)
0.85(AgSbTe
2)
0.15(TAGS) thermoelectric material; (ix) oxide pyroelectric material; (x) Jin Teer (Zintl) thermoelectric material; (xi) cage compound (clathrate) thermoelectric material.
Another preferred embodiment in, described sintering process is selected from: pressure sintering, discharge plasma sintering and hot pressed sintering.
Another preferred embodiment in, described predetermined configuration comprises at least following a kind of: cylinder, hollow circular cylinder, prism, hollow prism body, triangular prism, hollow triangular prism, parallelepiped post, hollow paral hexahedron post, five jiaos of prisms, hollow five jiaos of prisms, hexagonal prism, hollow hexagonal prism, from all directions post and hollows posts from all directions.
Another preferred embodiment in, connect multiple thermoelectric material chips or thermoelectric element sheet and be included in the step forming a section material of placing a kind of heat-conductivity conducting between the field of conjugate action of adjacent sheet and solidify this material to be linked together closely by adjacent sheet.
Another preferred embodiment in, the step that described section in a large number links together is comprised described section is in a large number stacked, and between adjacent section, insert spacer body so that described thermoelectric material or thermoelectric element are formed as predetermined configuration.
Another preferred embodiment in, described adjacent section is formed by respective a large amount of thermoelectric material chips or thermoelectric element sheet, and the material in these respective a large amount of thermoelectric material chips or thermoelectric element sheet is made up of the different semiconductor containing n-dopant and p-dopant.
Another preferred embodiment in, described predetermined configuration is hollow structure, and its inner surface is limited by the first aggregation of the respective part on the surface of each section and sheet, and its outer surface is limited by second aggregation of each section with the respective part on the surface of sheet.
Another preferred embodiment in, the method also comprises:
A kind of conductive electrode material is applied to going up at least partially of the inner surface of described hollow structure; And
A kind of conductive electrode material is applied to going up at least partially of the outer surface of described hollow structure.
Another preferred embodiment in, the conductive electrode material be arranged on the inner surface of described hollow structure is one of hot junction and cold junction, and the conductive electrode material be arranged on the outer surface of described hollow structure is hot junction and cold junction another.
On the other hand, the invention provides a kind of thermoelectricity components and parts, it comprises:
A large amount of thermoelectric material chips or thermoelectric element sheet, every a slice has at least one predetermined shape;
Multiple sections, each section comprises respective a large amount of thermoelectric material chips or thermoelectric element sheet, multiple thermoelectric material chips or thermoelectric element sheet are arranged in a predetermined combination and link together, and wherein, described multiple sections link together to produce the predetermined configuration for thermoelectric device.
In one preferred embodiment, described predetermined configuration comprises at least following a kind of: cylinder, hollow circular cylinder, prism, hollow prism body, triangular prism, hollow triangular prism, parallelepiped post, hollow paral hexahedron post, five jiaos of prisms, hollow five jiaos of prisms, hexagonal prism, hollow hexagonal prism, from all directions post and hollow posts from all directions.
Another preferred embodiment in, described section is in a large number stacked, and is included in each spacer body of inserting between adjacent section so that described thermoelectric material or thermoelectric element are formed as predetermined configuration.
Another preferred embodiment in, described adjacent section is formed by respective a large amount of thermoelectric material chips or thermoelectric element sheet, and the material in these respective a large amount of thermoelectric material chips or thermoelectric element sheet is made up of the different semiconductor containing n-dopant and p-dopant.
Another preferred embodiment in, described predetermined configuration is hollow structure, and its inner surface is limited by the first aggregation of the respective part on the surface of each section and sheet, and its outer surface is limited by second aggregation of each section with the respective part on the surface of sheet.
Another preferred embodiment in, described thermoelectric element also comprises:
A kind of conductive electrode material, it is placed in going up at least partially of the inner surface of described hollow structure; And
A kind of conductive electrode material, it is placed in going up at least partially of the outer surface of described hollow structure.
Another preferred embodiment in, the conductive electrode material be arranged on the inner surface of described hollow structure is one of hot junction and cold junction, and the conductive electrode material be arranged on the outer surface of described hollow structure is hot junction and cold junction another.
Accompanying drawing explanation
Fig. 1 is the end view of the various forming element of belt electrode (containing intermediate layer) according to an embodiment of the invention, and wherein, periphery is hot junction, and inner circumferential is cold junction.
Fig. 2 is the end view of the thermoelectric element of belt electrode (containing intermediate layer) according to an embodiment of the invention, and wherein, inner circumferential is hot junction, and periphery is cold junction.
Fig. 3 is the end view of the discharge plasma sintering mould inside according to an embodiment of the invention.
Fig. 4 is the end view of the hexagonal hollow structure modules of assembling according to an embodiment of the invention.
Embodiment
The invention provides and prepare the method that the abnormity method of (random) thermoelectric element and these heterotype elements of integrated assembling become thermoelectric device (module).Described thermoelectric device comprises n and p-type element, and (special-shaped n-and p-type element refers to that those do not have the element of the column construction of usual rectangular cross-section; Hollow polyhedron structural detail such as shown in Fig. 1,2 and 4, or, the hollow polyhedron structural detail assembled by multi-part), hot junction and cold terminal electrodes, intermediate layer between material and electrode, improve the coating of thermoelectric generator durability.
According to the present invention, described abnormity (random) thermoelectric element can adopt following several method to prepare:
Method A-directly prepares a hollow structure from mould or model, then its refine is become accurately that size is (namely, design the mould that directly can be prepared heterotype element in sintering process, or, designing one can the mould of direct pressing or cast molding, then passes through sintering curing);
Method B-prepares a hollow structure from a solid block, then cuts into a hollow structure;
Method C-forms the hollow structure of preliminary dimension and structure by the multiple parts of assembling.
In the present invention, adopt spraying and sintering technology can prepare electrode and intermediate layer at the inner surface of element and outer surface, surfaces externally and internally can be elected to be hot junction, and the preparation technology in electrode and intermediate layer depends on the design of device.The preparation of hollow component can be direct sintering, casting and compacting or cut from a solid module.
prepare the method A of special-shaped thermoelectric element:
● hot junction thin electrodes sheet is placed on the outward flange (mould is for special-shaped product is specially designed) in mould;
● thin intermediate layer thin slice is placed on electrode layer surface, with spaced electrode layer and thermoelectricity dusty material (as shown in Figure 3);
● thermoelectric material powder is put into mould, fills up remaining space (referring to Fig. 3);
Thickness=2x the L3 of thermoelectric material
Thickness=the L2-L3 in intermediate layer
Thickness=the L1-L2 of electrode layer
Gross thickness=the L1-L3 of intermediate layer and electrode layer
The thickness of the thermoelectric material ratio to the gross thickness of intermediate layer and electrode layer should be greater than 2;
● the thickness of at least thick than the thickness of the final element 30%(element of mold height of filling thermoelectricity powder is the distance between hot junction and cold junction);
● mould is placed in hot-press equipment or discharging plasma sintering equipment (SPS);
● to mould pressurizing, pressure limit is 30-60MPa;
● heat up to mould, temperature range is 350 to 1300 DEG C;
● at maximum temperature insulation 15-90min;
● by the block of powder sintered for a thermoelectricity formation required form;
● from mould, remove special-shaped block;
● machining obtains the inner surface of block to obtain the element of required size;
● the method for processing can be: (a) Linear cut; (b) laser cutting; (c) plasma cut; (d) other manufacturing process such as inner circle cutting;
● plated interior surfaces is to form cold terminal electrodes.
In the present invention, the electrode material in hot junction must possess with properties: the conductivity that (a) is very high and thermal conductivity; The CTE(thermal coefficient of expansion of (b) and thermoelectric material) mate as much as possible; Stable under (c) service condition.Described electrode material and possible flux material can be selected from following metal or their alloy: Ni, Cr, Mo, W, Cu, Si, Au, Pt, Zn, C, Ag, Al, Ta, Nb, Ti, Bi, Sn, Sb, Te etc.For oxide thermoelectricity element, flux material can comprise oxide material, such as CaMnO
3solid solution, Ca
3co
4o
9solid solution, ZnO solid solution.
In the present invention, intermediate layer material must possess with properties: the conductivity that (a) is very high; B () mates as much as possible with the CTE of thermoelectric material and electrode material; C () increases the bond strength of thermoelectric material and electrode material.Described intermediate layer material can be selected from following metal or their alloy: Mo, Ti, Al, Si, Pt, Zn, C, Ag, Al, Ta, Nb, Ti etc.
The material that the present invention relates to can be any thermoelectric material, such as bismuth telluride, skutterudite, half-Heusler, cage compound (clathrates), Jin Teer (zintle) compound, oxide etc.
Design of the present invention provides one and exchanges at the convection type heat of hot junction and cold junction.This convection type design ensure that the stable temperature difference between hot junction and cold junction in module, thus utilizes heat energy better, improves the performance of electricity generation system.
prepare the method C of special-shaped thermoelectric element:
● use cross section is circular or square or rectangular mould;
● electrode foil, intermediate layer thin slice and thermoelectricity powder are put into mould in order;
● graphite jig is put into hot pressing or plasma discharging equipment (SPS);
● exert pressure to mould, pressure is 30-60MPa;
● heating mould, maximum temperature is 350 to 1300 DEG C;
● maintain 15-90min under maximum temperature;
● electrode/intermediate layer/thermoelectric material powder three is sintered together the closely knit block of formation one;
● take out sintering fine and close block from mould;
● cutting block become preset parts (referring in Fig. 1 a);
● assembling or these parts integrated are to form required element (referring to Fig. 1).
In the present invention, electrode can be distributed in outer surface or the inner surface of heterotype element.
Hotter side electrode can be distributed in the outer surface of heterotype element, and cold terminal electrodes can be distributed in the inner surface (referring to Fig. 1) of heterotype element;
Cold terminal electrodes can be distributed in the outer surface of heterotype element, and hotter side electrode can be distributed in the inner surface of element, and this depends on the design (referring to Fig. 2) of system.
The combination of thermoelectric element and the method for assembling are not limited to the example enumerated herein, and its conception can extend to other component shape and other the integrated associated methods of element.
Therefore, the present invention also relates to thermoelectric device and the element of other shape or the method for combination of preparing abnormity.
Major advantage of the present invention is:
● special-shaped thermoelectric element and device (module) can adapt to erose thermal source very well;
● special-shaped thermoelectric element and thermal source have the highest contact area, thus can have the highest energy conversion efficiency;
Polygonal thermoelectric element or module can have the highest contact area with thermal source;
Can there be the highest contact area the outer ring of element or module with thermal source as hot junction;
● compared with tabular module, coaxial-type thermoelectric module architecture has the highest power stage and conversion efficiency, because convection type design provides temperature gradient stable between hot junction and cold junction;
● the hot junction module of coaxial configuration is applicable to the recycling of used heat very much;
● the method A technique directly preparing special-shaped thermoelectric element is simple, quick and with low cost, can compare favourably with method B;
● the method C of multi-part assembling can prepare the hollow structure of various shape, thus adapts to those thermals source having irregular surface, and the method technique is simply controlled, reliable, low cost, and the heterotype element size of preparation is accurate, and surface quality is good.
Embodiment
Contact specific embodiment below and set forth the present invention further.But, should be understood that these embodiments only do not form limitation of the scope of the invention for illustration of the present invention.The test method of unreceipted actual conditions in the following example, usually conveniently condition, or according to the condition that manufacturer advises.Except as otherwise noted, all percentage and number are by weight.
Embodiment 1:
According to following steps, discharge plasma sintering technique (SPS) is adopted to prepare hollow structure block:
Melting and heat-treating methods is adopted to prepare skutterudite material C eFe
4sb
12.The powder of 20g is put in and specially designedly has in the graphite jig of hollow structure.Then, adopt SPS technique by powder sintered one-tenth block, the rate of heat addition is 40K/min, and sintering temperature is 843K, and temperature retention time is 30min, and sintering pressure is 60MPa.After stove is cold, the sample with hollow structure takes out from mould, then, adopts Linear cut to carry out refine to obtain the sample of preliminary dimension to sample.Finally, adopt Linear cut or laser cutting that the block cutting of hollow structure is become the thin slice of appointed thickness.
Embodiment 2
According to following steps, discharge plasma sintering method is adopted to prepare hexagonal hollow body:
Adopting the method for solid phase reaction or electric arc melting heat treated to prepare composition is ZrNiSn
0.99sb
0.01material.The dusty material of 20g is put into the graphite jig with hexagonal structure.Then, adopt SPS technique by powder sintered one-tenth block.The rate of heat addition is 30K/min, and sintering temperature is 923K, and temperature retention time is 30min, and sintering pressure is 50MPa.After stove is cold, sample is taken out from mould.Axle is to the hole of a brill 1mm in the sample to which to adopt drilling machine, and then employing Linear cut is formed centrally a hexagonal cavity in sample.Finally, hexagonal hollow body is cut into the thin slice of preliminary dimension thickness.
Embodiment 3
According to following steps, hot pressed sintering and assembling method is adopted to prepare hexagonal hollow body:
Melting and heat-treating methods is adopted to prepare skutterudite material Yb
0.3cO
4sb
12.Electrode foil, intermediate layer thin slice and 20g skutterudite powder are put in square graphite jig.Then, adopt heat pressing process by powder sintered one-tenth block, the rate of heat addition is 40K/min, and sintering temperature is 893K, and temperature retention time is 60min, and sintering pressure is 30MPa.After stove is cold, square sample is taken out from mould.Then, adopt Linear cut sample is processed, cutting and refine become preset parts (see in Fig. 1 a), the trapezoidal of refined component is gone to the bottom as electrode layer (hot junction).Electric plating method is adopted to form cold terminal electrodes at the upper base of trapezoid elements.Finally, six block parts are assembled into the complete thermal electric device (see Fig. 1) of hexagon hollow structure.
The all documents mentioned in the present invention are quoted as a reference all in this application, are just quoted separately as a reference as each section of document.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after having read above-mentioned instruction content of the present invention.
Claims (19)
1. prepare a method for thermoelectricity components and parts, the method comprises:
A () provides a large amount of thermoelectric material chips or thermoelectric element sheet, every sheet has at least one predetermined shape;
B multiple thermoelectric material chips or thermoelectric element sheet are arranged in a predetermined combination by (), and connect described multiple thermoelectric material chips or thermoelectric element sheet to form a thermoelectric material section or thermoelectric element section;
C () repeats step (b) to produce a large amount of sections; And
D described section in a large number links together to produce the predetermined configuration that is used for thermoelectricity components and parts by ().
2. the method for claim 1, is characterized in that, the method also comprises and forms each thermoelectric material chips or thermoelectric element sheet by carrying out sintering process to sintered powder to make each thermoelectric material chips or thermoelectric element sheet present described shape.
3. the method for claim 1, it is characterized in that, described sintering process comprises sintered powder is placed in the mould being configured to described shape, and sintered powder is pressurizeed, be incubated and galvanization to prepare a large amount of thermoelectric material chips or thermoelectric element sheet.
4. method as claimed in claim 2, is characterized in that, described sintered powder comprises at least following a kind of: (i) a kind of thermoelectricity composition; (ii) Bi
2te
3; (iii) PbTe; (iv) skutterudite; (v) Yb
0.3cO
4sb
12skutterudite; (vi) silicide thermoelectric material; (vii) Half-Heusler thermoelectric material; (viii) (GeTe)
0.85(AgSbTe
2)
0.15(TAGS) thermoelectric material; (ix) oxide pyroelectric material; (x) Jin Teer thermoelectric material; (xi) cage compound thermoelectric material.
5. method as claimed in claim 2, it is characterized in that, described sintering process is selected from: pressure sintering, discharge plasma sintering and hot pressed sintering.
6. the method for claim 1, it is characterized in that, described predetermined configuration comprises at least following a kind of: cylinder, hollow circular cylinder, prism, hollow prism body, triangular prism, hollow triangular prism, parallelepiped post, hollow paral hexahedron post, five jiaos of prisms, hollow five jiaos of prisms, hexagonal prism, hollow hexagonal prism, from all directions post and hollow posts from all directions.
7. the method for claim 1, it is characterized in that, connect multiple thermoelectric material chips or thermoelectric element sheet and be included in the step forming a section material of placing a kind of heat-conductivity conducting between the field of conjugate action of adjacent sheet and solidify this material to be linked together closely by adjacent sheet.
8. the method for claim 1, it is characterized in that, the step that described section in a large number links together is comprised described section is in a large number stacked, and between adjacent section, insert spacer body so that described thermoelectric material or thermoelectric element are formed as predetermined configuration.
9. described in as claimed in claim 8, it is characterized in that, described adjacent section is formed by respective a large amount of thermoelectric material chips or thermoelectric element sheet, and the material in these respective a large amount of thermoelectric material chips or thermoelectric element sheet is made up of the different semiconductor containing n-dopant and p-dopant.
10. the method for claim 1, it is characterized in that, described predetermined configuration is hollow structure, and its inner surface is limited by first aggregation of each section with the respective part on the surface of sheet, and its outer surface is limited by second aggregation of each section with the respective part on the surface of sheet.
11. methods as claimed in claim 10, it is characterized in that, the method also comprises:
A kind of conductive electrode material is applied to going up at least partially of the inner surface of described hollow structure; And
A kind of conductive electrode material is applied to going up at least partially of the outer surface of described hollow structure.
12. methods as claimed in claim 10, it is characterized in that, the conductive electrode material be arranged on the inner surface of described hollow structure is one of hot junction and cold junction, and the conductive electrode material be arranged on the outer surface of described hollow structure is hot junction and cold junction another.
13. 1 kinds of thermoelectricity components and parts, it comprises:
A large amount of thermoelectric material chips or thermoelectric element sheet, every a slice has at least one predetermined shape;
Multiple sections, each section comprises respective a large amount of thermoelectric material chips or thermoelectric element sheet, multiple thermoelectric material chips or thermoelectric element sheet are arranged in a predetermined combination and link together, and wherein, described multiple sections link together to produce the predetermined configuration for thermoelectricity components and parts.
14. thermoelectric elements as claimed in claim 13, it is characterized in that, described predetermined configuration comprises at least following a kind of: cylinder, hollow circular cylinder, prism, hollow prism body, triangular prism, hollow triangular prism, parallelepiped post, hollow paral hexahedron post, five jiaos of prisms, hollow five jiaos of prisms, hexagonal prism, hollow hexagonal prism, from all directions post and hollow posts from all directions.
15. thermoelectric elements as claimed in claim 13, it is characterized in that, described section is in a large number stacked, and is included in each spacer body of inserting between adjacent section so that described thermoelectric material or thermoelectric element are formed as predetermined configuration.
16. thermoelectric elements as claimed in claim 15, it is characterized in that, described adjacent section is formed by respective a large amount of thermoelectric material chips or thermoelectric element sheet, and the material in these respective a large amount of thermoelectric material chips or thermoelectric element sheet is made up of the different semiconductor containing n-dopant and p-dopant.
17. thermoelectric elements as claimed in claim 13, it is characterized in that, described predetermined configuration is hollow structure, and its inner surface is limited by first aggregation of each section with the respective part on the surface of sheet, and its outer surface is limited by second aggregation of each section with the respective part on the surface of sheet.
18. thermoelectric elements as claimed in claim 17, it is characterized in that, it also comprises:
A kind of conductive electrode material, it is placed in going up at least partially of the inner surface of described hollow structure; And
A kind of conductive electrode material, it is placed in going up at least partially of the outer surface of described hollow structure.
19. thermoelectric elements as claimed in claim 18, it is characterized in that, the conductive electrode material be arranged on the inner surface of described hollow structure is one of hot junction and cold junction, and the conductive electrode material be arranged on the outer surface of described hollow structure is hot junction and cold junction another.
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| CN101136450A (en) * | 2007-10-16 | 2008-03-05 | 中国科学院上海硅酸盐研究所 | Pi type CoSb3 based thermoelectric converting device and method for producing the same |
| CN101553059A (en) * | 2008-04-03 | 2009-10-07 | 惠公 | Method for manufacturing molding thick-film electric heater |
| CN102479917A (en) * | 2010-11-29 | 2012-05-30 | 财团法人工业技术研究院 | Thermoelectric conversion module with high thermoelectric conversion efficiency |
| CN103296192A (en) * | 2013-05-27 | 2013-09-11 | 河南理工大学 | Massive thermoelectric material preparation method |
-
2013
- 2013-11-07 CN CN201310549191.2A patent/CN104638101B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101136450A (en) * | 2007-10-16 | 2008-03-05 | 中国科学院上海硅酸盐研究所 | Pi type CoSb3 based thermoelectric converting device and method for producing the same |
| CN101553059A (en) * | 2008-04-03 | 2009-10-07 | 惠公 | Method for manufacturing molding thick-film electric heater |
| CN102479917A (en) * | 2010-11-29 | 2012-05-30 | 财团法人工业技术研究院 | Thermoelectric conversion module with high thermoelectric conversion efficiency |
| CN103296192A (en) * | 2013-05-27 | 2013-09-11 | 河南理工大学 | Massive thermoelectric material preparation method |
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