CN104637948A - Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof - Google Patents
Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of ferroelectric memory, in particular to a non-destructive readout ferroelectric memory and a manufacturing method and a read/write operation method thereof. The ferroelectric memory comprises a ferroelectric film layer and a read/write electrode layer which is arranged on the ferroelectric film layer, wherein a gap for partitioning the read/write electrode layer into at least two parts is formed in the read/write electrode layer; the polarization direction of the electric domain of the ferroelectric film layer is not basically parallel to the normal direction of the read/write electrode layer; read operation and write operation can be finished through the read/write electrode layer. The ferroelectric memory is simple in structure, is easiness to manufacture, is low in cost, and is suitable for high-density application; a non-destructive current readout way can be realized.
Description
Technical field
The invention belongs to FERROELECTRICS MEMORIES TECHNOLOGY field, be specifically related to non-destructive read-out ferroelectric memory, particularly relate to a kind of electrode based on having gap and carry out the ferroelectric memory of non-Destructive readout operation and the preparation method of this ferroelectric memory and read/write operation method.
Background technology
Ferroelectric Random Access Memory FRAM (Ferroelectric Random Access Memory) be utilize ferroelectric domain (or being called " electricdomain ") in the electric field two kinds of different polarization orientations store the nonvolatile memory (Non-volatile Memory) of data as logical message (" 0 " or " 1 "), it also can be called " ferroelectric memory ".
The storage medium layer of ferroelectric memory is the ferroelectric thin film layer of the ferroelectric domain with can reverse (or being called " upset "), and at present, the prestissimo of the domain reversal can measured in laboratory can reach 0.2 ns, and in fact it can also be faster.Normally, the speed reversal of electricdomain determines the access time of memory, and the coercive voltage of domain reversal determines the read-write voltage of device, and it almost can reduce in equal proportion along with the reduction of film thickness.Therefore, ferroelectric memory has that reading and writing data speed is fast, driving voltage is low and storage density advantages of higher, obtains in recent years and pays close attention to widely and develop faster.
At present, ferroelectric memory mainly can be divided into by groundwork or operator scheme: the FRAM of destructive reading (DRO) and the large class of the FeFET two of non-Destructive readout (NDRO).
Destructive (DRO) ferroelectric memory that reads replaces conventional stored charge electric capacity with ferroelectric capacitor (electric capacity formed using ferroelectric thin film layer as dielectric layer), and utilize its polarization reversal to realize write and the reading of data.Up to now, all ferroelectric memorys that market is applied are all adopt this mode of operation, wherein with a 1 transistor T and ferroelectric capacitor C(and 1T1C) build memory cell, and using this 1T1C memory cell based on circuit design, in read operation process, adopt the method for charge integration, fetch the electricdomain judging ferroelectric thin film layer whether reverse by carrying out voltage reading to the reference capacitance of connecting with 1T1C memory cell, thus the logical message in recognition memory cell.This ferroelectric memory is in read operation, and voltage reading can cause the domain reversal of ferroelectric thin film layer, and therefore, its shortcoming is information reading is destructive, and poor reliability, needs again to write back original logical message state after read operation.In addition, along with the raising of device integration density, the area of the ferroelectric capacitor C of memory cell constantly reduces, and to read electric charge be directly proportional to the area of ferroelectric capacitor C, therefore can read electric charge also fewer and feweri; When device memory cell size is less than 130nm, the logical message stored in the basic None-identified memory cell of current reading circuit, seriously hinders ferroelectric memory to high density future development.
Non-Destructive readout (NDRO) ferroelectric memory is then utilize ferroelectric thin film layer replace the gate dielectric layer of conventional MOSFET and form the ferro-electric field effect transistor (FeFET) of MFS structure.Leakage current I can be changed by the control of polarised direction
dssize, gap can reach several order of magnitude, and storage information can realize non-demolition and read under very little voltage.It has High Density Integration, high read or write speed, non-demolition read and the feature such as low-power consumption, but due to the logical message retention of this device poor, generally can only reach a couple of days, and storage market General Requirements is not less than 10 years.Therefore this structure is also in the laboratory research stage at present, fails practice in memory product.
Therefore, the destructiveness of Current commercialization application reads (DRO) ferroelectric memory mainly to read in charge integration mode ferroelectric capacitor, as summarized above, it has the destructive shortcoming read, need after reading to re-write data, thus along with the operation of a large amount of erasings and rewriting, cause the reliability of device to reduce, have impact on data reading speed; Further, it is scaled that this reading principle limits ferroelectric capacitor C, and storage density is low, and such as, the ferroelectric memory of current commercial applications is maximum only has 8MB.
Summary of the invention
The object of the present invention is to provide a kind of that can realize non-Destructive readout with electric current reading manner, that memory property is good ferroelectric memory, the read operation of ferroelectric memory and write operation have all been come by same electrode layer.
For realizing above object or other objects, the invention provides following technical scheme.
According to an aspect of of the present present invention, a kind of non-destructive read-out ferroelectric memory is provided, comprise ferroelectric thin film layer (305) and be arranged on the read-write electrode layer (307) in described ferroelectric thin film layer (305), the gap (309) being divided at least two parts is provided with, the normal direction of the substantially not parallel described read-write electrode layer (307) of polarised direction of the electricdomain (3051 or 3053) of described ferroelectric thin film layer (305) in described read-write electrode layer (307);
Wherein, when being biased the write signal of first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted in the mode longitudinally running through described ferroelectric thin film layer (305);
Wherein, when being biased the read signal of first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), the electricdomain local of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted and sets up domain wall conductive channel (3058).
Non-destructive read-out ferroelectric memory according to an embodiment of the invention, wherein, when being biased the write signal of second direction opposite to the first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), initial polarization direction is got back in described electricdomain (3053a) reversion that the mode making longitudinally to run through described ferroelectric thin film layer (305) is inverted.
According to the non-destructive read-out ferroelectric memory of further embodiment of this invention, wherein, in described read-write electrode layer, at least two parts of (307) comprise the first read-write electrode part and the second read-write electrode part, described first read-write electrode part and the second read-write electrode part composition read-write electrode pair, described write signal or read signal are biased on described read-write electrode pair.
In the non-destructive read-out ferroelectric memory of described any embodiment before, configure the thickness of described ferroelectric thin film layer (305) and/or the spacing (d) in described gap with enable biased pre-sizing write voltage effect under the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) be inverted in the mode longitudinally running through described ferroelectric thin film layer (305).
In the non-destructive read-out ferroelectric memory of described any embodiment before, configure the thickness of described ferroelectric thin film layer (305) and/or the spacing (d) in described gap with make biased pre-sizing read voltage effect under the electricdomain local of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) can be inverted and set up domain wall conductive channel (3058).
Alternatively, the spacing (d) in described gap is more than or equal to 2 nanometers and is less than or equal to 500 nanometers, or is more than or equal to 5 nanometers and is less than or equal to 100 nanometers.
Alternatively, the width (w) in described gap is more than or equal to 5 nanometers and is less than or equal to 500 nanometers.
Alternatively, the spacing (d) in described gap can be less than or greater than the thickness of described ferroelectric thin film layer (305).
Particularly, described non-destructive read-out ferroelectric memory also comprises substrate (100), and described ferroelectric thin film layer (305) is arranged on described substrate (100).
Preferably, described substrate (100) is dielectric base.
Alternatively, described ferroelectric thin film layer (305) is bismuth ferrite BiFeO
3, mix bismuth ferrite salt (Bi, the La) FeO of La
3, lead zirconate titanate salt (Pb, Zr) TiO
3or niobic acid lithium salts LiNbO
3.
Alternatively, the thickness of described ferroelectric thin film layer (305) is more than or equal to 5 nanometers and is less than or equal to 500 nanometers.
Alternatively, the thickness of described read-write electrode layer (307) is more than or equal to 5 nanometers and is less than or equal to 100 nanometers.
Alternatively, by controlling the crystal orientation that described ferroelectric thin film layer (307) grows, to such an extent as to the normal direction of the substantially not parallel described read-write electrode layer (307) of the polarised direction of the electricdomain of described ferroelectric thin film layer (305) (3051,3053).
Alternatively, be received in described gap (309) or partly insert insulating dielectric materials.
According to another aspect of the present invention, the preparation method of non-destructive read-out ferroelectric memory described in more than one is provided, comprises step:
Substrate (301) is provided;
Form ferroelectric thin film (305); And
At the upper read-write electrode layer (307) formed with described gap (309) of described ferroelectric thin film layer (305).
Preparation method according to an embodiment of the invention, wherein, described gap (309) are by carrying out electron beam process or nano impression formation to the metal flat bed forming read-write electrode layer (307).
According to also one side of the present invention, the write operation method of non-destructive read-out ferroelectric memory described in more than one is provided, wherein, the write signal (V of biased first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307)
write1), the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted in the mode longitudinally running through described ferroelectric thin film layer (305), thus write the first logical message (" 1 ").
Further, the write signal (V of second direction biased opposite to the first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307)
write2), initial polarization direction is got back in described electricdomain (3053a) reversion that the mode making longitudinally to run through described ferroelectric thin film layer (305) is inverted, thus write the second logical message (" 0 ").
Wherein, in described ferroelectric thin film layer (305), domain wall (3054) is formed, the upper surface of the through described ferroelectric thin film layer (305) of this domain wall (3054) and lower surface between the described electricdomain (3053a) be inverted in the mode longitudinally running through described ferroelectric thin film layer (305) and the described electricdomain (3051a) be not inverted.
According to another aspect of the invention, the read operation method of non-destructive read-out ferroelectric memory described in more than one is provided, wherein, the read signal of biased first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), set up domain wall conductive channel by the size of current read between these two parts to judge the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) whether to be locally inverted, thus read the logical message stored.
Read operation method according to an embodiment of the invention, wherein, after removing described read signal, the electricdomain that in read operation process, local is inverted returns back to the polarised direction before read operation substantially, thus described domain wall conductive channel is eliminated automatically.
If after removing described read signal, the electricdomain that in read operation process, local is inverted does not return back to the polarised direction before read operation, and described domain wall conductive channel was opened all the time before upper once write operation, can not affect read operation next time.
Wherein, when described read signal read voltage fixing, the ON state current (I) when setting up described domain wall conductive channel reduces with the increase of the spacing (d) in described gap.
Wherein, described read signal to read voltage larger, the accounting being inverted part in the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is larger.
Wherein, described read signal to read voltage larger, the degree of depth on the surface of the described domain wall conductive channel relative gap (309) of formation is darker, reads voltage with the thickness making the degree of depth of described domain wall conductive channel be less than described ferroelectric thin film layer described in arranging.
Wherein, described read signal read that voltage is less than described write signal write voltage.
Technique effect of the present invention is, the ferroelectric memory of the embodiment of the present invention utilizes the gap arranged in read-write electrode layer, and part ferroelectric thin film layer corresponding to corresponding gap can local occur under the electric field action between read-write electrode pair or reverse fully; Electric field wherein during read operation between this gap can make the electricdomain of part described ferroelectric thin film layer local be inverted and set up domain wall conductive channel, after read signal removes, whether the electricdomain regardless of this reversion can be recovered reversion or not recover reversion, can realize the non-Destructive readout of current system; Wherein, during write operation, the electricdomain of the described ferroelectric thin film layer of part in corresponding gap is inverted in the mode longitudinally running through described ferroelectric thin film layer, and after write signal removes, the electricdomain of this reversion can keep, and therefore, write operation is simple, and data retention characteristics is good; Further, the ON state current read when setting up domain wall conductive channel can increase with the reduction of the spacing in gap, therefore, is very beneficial for small size, high-density applications; Structure is simple simultaneously, preparation is simple, cost is low.
Accompanying drawing explanation
From following detailed description by reference to the accompanying drawings, will make above and other object of the present invention and advantage more complete clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the cross section structure schematic diagram of the non-destructive read-out ferroelectric memory according to one embodiment of the invention.
Fig. 2 is the top plan view structure of the top electrode of the memory of non-destructive read-out ferroelectric shown in Fig. 1.
Fig. 3 is the another top plan view structure of the top electrode of Fig. 1 non-destructive read-out ferroelectric memory.
Fig. 4 is the one writing of ferroelectric memory embodiment illustrated in fig. 1 and writes " 0 " operating principle schematic diagram.
Fig. 5 is reading " 1 " and reading " 0 " operating process and operating principle schematic diagram of ferroelectric memory embodiment illustrated in fig. 1.
Fig. 6 be the ferroelectric memory of stored logic information " 0 " to one embodiment of the invention read-write electrode pair on I-V curve chart when carrying out voltage scanning operation.
Fig. 7 is the relation schematic diagram between ON state read current I under the read signal of 3V of the ferroelectric memory of one embodiment of the invention and clearance distance d.
Fig. 8 is read current relation over time after the one writing of ferroelectric memory at +/-4V/" 0 " operation of one embodiment of the invention.
Fig. 9 is preparation method's process schematic of the ferroelectric memory of one embodiment of the invention.
Embodiment
Introduce below be of the present invention multiple may some in embodiment, aim to provide basic understanding of the present invention, be not intended to confirm key of the present invention or conclusive key element or limit claimed scope.
In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, the dimension scale relation between each several part in diagram does not reflect actual dimension scale relation.
In the examples below, clear in order to what describe, exemplarily give electricdomain direction or polarised direction, but be to be understood that, the electricdomain direction of ferroelectric memory or polarised direction are not limited to the direction as shown in the figure shown in embodiment.
Figure 1 shows that the cross section structure schematic diagram of the non-destructive read-out ferroelectric memory according to one embodiment of the invention; Figure 2 shows that the top plan view structure of the top electrode of the memory of non-destructive read-out ferroelectric shown in Fig. 1.As shown in Figure 1, illustrated therein is the partial cross section structure of ferroelectric memory 10, it mainly comprises substrate 301, ferroelectric thin film layer 305 and read-write electrode layer 307, and wherein, read-write electrode layer 307 to be arranged in ferroelectric thin film layer 305 and to be in contact with it.The ferroelectric memory 10 of the embodiment of the present invention is different from conventional iron electrical storage, it does not need the lower electrode layer being arranged on read-write electrode layer 307 opposite side, read-write electrode layer 307 both can be used for realizing read operation in this ferroelectric memory 10, also can be used for realizing write operation, read-write electrode layer 307 is therefore also referred to as read-write electrode layer 307.
Continue as depicted in figs. 1 and 2, the gap 309 being divided into some parts is provided with in read-write electrode layer 307, in this example, read-write electrode layer 307 is divided at least two parts by gap 309, namely electrode part 3071 and read-write electrode part 3073 is read and write, read-write electrode part 3071 and read-write electrode part 3073 form read-write electrode pair, and in this embodiment, this read-write electrode pair mainly constitutes the read-write electrode layer 307 of this embodiment.
Continue as shown in Figure 1, substrate 301 can be various base materials conventional in ferroelectric memory, and such as it can be Si, SrTiO
3or LiNbO
3.Normally, the Material selec-tion of substrate 100 determines jointly primarily of substrate 301 and ferroelectric thin film layer 305.In this embodiment, substrate 301 can be Si substrate, and it is easy to compatible with semiconductor CMOS process, contributes to large-scale production.In addition, require to select SrTiO according to the lattice constant of ferroelectric thin film layer 305
3or LiNbO
3deng base material, to obtain the epitaxial thin-film layer of excellent performance.
Ferroelectric thin film layer 305 is formed on substrate 301, and can be arbitrary ferroelectric material with suitable domain structure, it specifically can be selected from following material: bismuth ferrite BiFeO
3, mix bismuth ferrite salt (Bi, the La) FeO of La
3, lead zirconate titanate salt (Pb, Zr) TiO
3or niobic acid lithium salts LiNbO
3; But be to be understood that, the concrete ferroelectric material type of ferroelectric thin film layer 305 is not restriction, and those skilled in the art can select the ferroelectric material type of any one.The preparation method of ferroelectric thin film layer 305 neither be restrictive, such as, can pass through the preparation of the thin film deposition method such as collosol and gel, sputtering, CVD, PLD and be formed.The thickness range of ferroelectric thin film layer 305 can be more than or equal to 5 nanometers and be less than or equal to 500 nanometers, and such as, it can be 20nm, 30nm, 50nm or 100nm.
Read-write electrode part 3071 and read-write electrode part 3073 can be formed by patterned etch gap 309 by continuous print metal film layer in this embodiment, and certainly, in other embodiments, they also can be formed by composition respectively.In this article, read-write electrode part 3071 and read-write electrode part 3073 form read-write electrode pair, " read " herein to reflect that they at least have the function of read operation, " write " herein and reflect that they at least have the function of write operation.
Read-write electrode part 3071 and/or read-write electrode part 3073 its can be a kind of electric conducting material of low-resistivity, such as, it can be selected from Pt, SrRuO
3, LaNiO
3in one or more combination.The thickness of read-write electrode part 3071 and/or read-write electrode part 3073 can be 5 ~ 100nm, such as, and 20nm.Read-write electrode part 3071 and/or read-write electrode part 3073 can be, but not limited to be formed by the preparation of the thin film deposition method such as sputtering, evaporation, CVD, PLD.
Gap 309 is for realizing relative electric isolution (this electric isolution does not comprise the situation below by way of the domain wall conductive channel set up in read operation process) by read-write electrode part 3071 with read-write electrode part 3073, gap 309 can be passed through to obtain metal flat bed electron beam process, nano impression or other photoetching methods, but the formation method in gap 309 is not limited to the embodiment of the present invention.The scope of the spacing d in gap 309 can be more than or equal to 2 nanometers and be less than or equal to 500 nanometers, more preferably be more than or equal to 5 nanometers and be less than or equal to 100 nanometers, can be such as 10 nanometers, 135 nanometers, 125 nanometers etc., spacing d is less, more be conducive to improving the storage density of ferroelectric memory, and be more conducive to reduction and read voltage and increase read current, and it is less to read power consumption, therefore, gap 309 can be the gap 305 of various nano-scale.The shape in gap 309 is not limited to shape as shown in Figure 2, and in other embodiments, gap 309 can also be even zigzag etc.Read-write electrode part 3071 and the width w size of read-write electrode part 3073 on direction, down suction (being also the width dimensions in gap) can be more than or equal to 5 nanometers and be less than or equal to 500 nanometers, such as 50 nanometers.
Figure 3 shows that the another top plan view structure of the top electrode of Fig. 1 non-destructive read-out ferroelectric memory.In this embodiment, read-write electrode layer 307 is divided into 4 parts by gap 309, namely electrode part 3071, read-write electrode part 3073, read-write electrode part 3075 and read-write electrode part 3077 is read and write, both sides, gap 309 adjacent any two read-write electrode part can form one group read-write electrode pair, such as, read-write electrode part 3073 and read-write electrode part 3077, read-write electrode part 3075 and read-write electrode part 3077; Certainly, also can by four composition of read-write electrode part as shown in Figure 3 read-write electrode pairs.
Continue as shown in Figure 1, in the present invention, ferroelectric thin film layer 305 is required to meet its ferroelectric domain condition important in face, also namely there is component in face (projection in the direction of spontaneous polarization on face of ferroelectric electricdomain), ferroelectric thin film layer 305 can form the electricdomain 3051 or 3053 of both direction as shown in Figure 1, the polarised direction of electricdomain 3051 is completely contrary with the polarised direction of electricdomain 3053, biased be greater than coercive voltage after, electricdomain can along direction of an electric field orientation, therefore, the voltage contrary with former electricdomain direction in bias field direction and when being greater than coercive voltage, electricdomain 3051 or 3053 can be reversed.In this embodiment, normal (as shown in the figure perpendicular to the dotted line of the read-write electrode layer 307) direction of the substantially not parallel read-write electrode layer 307 of polarised direction of the electricdomain of ferroelectric thin film layer 307, or be substantially not orthogonal to read-write electrode layer 307, specifically as shown in Figure 1, the angle α of the read-write normal of electrode layer 307 and the polarised direction of electricdomain is for being not equal to 0 and 180
o, such as α=45
o, such electricdomain has component in face.Particularly, the crystal orientation that can grow by controlling ferroelectric thin film layer 307 realizes, and illustratively, can be the SrTiO of (001) at crystal face
3the BiFeO of substrate 301 Epitaxial growth 100 nanometer thickness
-3ferroelectric thin film layer 307, wherein BiFeO
-3the polarised direction of the electricdomain of ferroelectric thin film layer 307 is along <111> direction.
Figure 4 shows that the one writing of ferroelectric memory embodiment illustrated in fig. 1 and write " 0 " operating principle schematic diagram.
In this embodiment, with electricdomain 3051 place polarised direction stored logic information " 0 " of ferroelectric thin film layer 305 for signal is described.As shown in Figure 4 (a), in one writing operating process, biased write signal V between the read-write electrode part 3073 and read-write electrode part 3071 of read-write electrode layer 307
write1, also namely form read-write electrode pair upper offset write signal V in read-write electrode part 3073 and read-write electrode part 3071
write1, the direction of write signal is that read-write electrode part 3073 is biased forward, read-write electrode part 3071 is biased negative sense, thus their form the electric field E1 in direction roughly as shown in Figure 4 (a).Due to the existence in gap 309, electric field E1 can have an impact to the electricdomain of the part ferroelectric thin film layer corresponding to gap 309, the electric field component of electric field E1 on the direction contrary with the polarised direction of electricdomain 3051a is greater than when making this electricdomain that the coercive voltage overturn occur, and reversion occurs this electricdomain 3051, and to form the polarised direction of the electricdomain 3053 shown in electricdomain 3053a(electricdomain 3053a and Fig. 1 substantially identical).Based on ferroelectric thin film layer 305 at write signal V
write1electric-field intensity distribution under this effect is known, V
write1to write voltage larger, the degree of depth that the electricdomain 3053a of reversion occurs is darker.Therefore, can by controlling the voltage swing of write signal and/or the thickness by ferroelectric thin film layer 305, the electricdomain 3053a that generation is reversed longitudinally (direction of vertical ferroelectric thin layer 305) runs through this ferroelectric thin film layer 305; Example as shown in Figure 4 (a), has a certain size the write signal V writing voltage (such as+4V)
write1under effect, the electricdomain (electricdomain in the ferroelectric thin film layer 305 namely roughly below gap 309) of the part ferroelectric thin film layer 305 in corresponding gap 309 is inverted forms electricdomain 3053a substantially completely.
The electricdomain of other parts of ferroelectric thin film layer 305 is not owing to substantially affecting (or electric field E1 gives birth to reversion to its under-effected its electricdomain that makes) by electric field E1, electricdomain is not reversed, the corresponding electricdomain 3051a formed as shown in Figure 4 (a), the part electricdomain also namely outside the reversing of electricdomain 3051 forms electricdomain 3051a.The polarised direction of electricdomain 3053a is basic completely contrary with the polarised direction of electricdomain 3051a, therefore, boundary's wall between electricdomain 3051a and electricdomain 3053a or interface, thus charged domain wall or domain boundary 3054 can be produced, but the conductive channel of domain wall 3054 correspondence can turn off in the place close to substrate, can not affect the read current of wherein readout.Therefore, preferably, substrate 301 can be the dielectric base that various insulating material is formed.In embodiments of the present invention, form domain wall 3054 after one writing operation and run through ferroelectric thin film layer 305, also namely can the upper surface of through ferroelectric thin film layer 305 and lower surface, like this, electricdomain 3053a is surrounded on four sides by electricdomain 3051a, electricdomain 3053a can't automatically return to one writing under unpolarizing before state, the logical message be written into is preserved; The concrete shape of domain wall 3054 does not also limit by the diagram shape of embodiment of the present invention restriction, and such as, two domain walls 3054 can form roughly cylindricality.
Wherein, because electricdomain 3053a is that the electric field component utilizing electric field E1 on the direction contrary with the polarised direction of electricdomain 3051a realizes overturning, therefore, when the thickness of the coercive voltage of ferroelectric thin film layer, ferroelectric thin film layer is known, the most small letter voltage V forming electricdomain 3053a can be calculated
write1.
As shown in Figure 4 (b), writing in " 0 " operating process, forming read-write electrode pair upper offset write signal V in read-write electrode part 3073 and read-write electrode part 3071
write2, write signal V
write2with write signal V
write1direction contrary, wherein read and write that electrode part 3073 is biased negative sense, read-write electrode part 3071 is biased forward, thus their form the electric field E2 in direction roughly as shown in Figure 4 (b).Due to the existence in gap 309, electric field E2 can have an impact to the electricdomain of the part ferroelectric thin film layer corresponding to gap 309, also namely can have an impact to electricdomain 3053a as shown in Figure 4 (a), the electric field component of electric field E2 on the direction contrary with the polarised direction of electricdomain 3053a is greater than when making this electricdomain that the coercive voltage overturn occur, this electricdomain 3053a reverses, be returned to original or initial polarised direction, unified formation electricdomain 3051.Now, logical message is written as " 0 ".
Similarly, based on ferroelectric thin film layer 305 at write signal V
write2electric-field intensity distribution under this effect is known, V
write2to write voltage larger, make electricdomain 3053a reply the degree of depth of reversion darker.Therefore, by controlling the voltage swing of write signal, electricdomain 3053a all can be replied and is reversed to electricdomain 3051; Example as shown in Figure 4 (b), has a certain size the write signal V writing voltage (such as-4V)
write2under effect, the electricdomain 3053a in the electricdomain 3053a(of the part ferroelectric thin film layer 305 in corresponding gap 309 ferroelectric thin film layer 305 namely roughly below gap 309) be rotarily formed electricdomain 3051 completely, domain wall 3054 disappears.
Wherein, write signal V
write1and V
write2concrete signal form is not restrictive, and such as it can be the voltage pulse signal etc. of certain frequency.
Figure 5 shows that reading " 1 " and reading " 0 " operating process and operating principle schematic diagram of ferroelectric memory embodiment illustrated in fig. 1.
In this embodiment, read operation principle is different from the read operation principle of traditional ferroelectric memory completely, and wherein, when read operation, substrate 301 does not need offset signal, and it can be unsettled, read signal V
readbe biased between read-write electrode pair, below to be biased in read-write electrode part 3071, read-write electrode part 3073 is described for example.
As shown in Fig. 5 (a), reading in " 1 " operating process, biased read signal V between read-write electrode part 3071, read-write electrode part 3073
readread-write electrode part 3073 is biased forward, read-write electrode part 3071 is biased negative sense, thus the electric field E3(forming direction as shown in the figure between read-write electrode part 3073 and read-write electrode part 3071 is now defined as "+" reads voltage), due to the existence in gap 309, electric field E3 can have an impact to the electricdomain of the part ferroelectric thin film layer corresponding to gap 309 partly, because electric field E3 does not exist the electric field component making electricdomain 3053a reverse, therefore, regardless of read signal V
readread voltage and how to increase, electricdomain 3053a remains unchanged completely, and read-write electrode part 3073 is biased between forward, read-write electrode part 3071 can not form conductive channel, now read current I
read=0, read current I
readfor Off state (i.e. OFF state), represent and read logical message " 1 ".
It is to be appreciated that read signal V
readvoltage of reading preferably be less than write signal V
write1write voltage, like this, avoid when read operation produce " mistake " write operation.
Continue as shown in Fig. 5 (a), at read signal V
readafter removing, because the electricdomain in ferroelectric thin film layer in above read operation process does not change, therefore, read signal V
readelectricdomain after removing in ferroelectric thin film layer does not also change.
As shown in Fig. 5 (b), reading in " 0 " operating process, biased read signal V between read electrode part 3071, read electrode part 3073
read, form the electric field E3 in direction as shown in the figure, due to the existence in gap 109, electric field E3 can have an impact to the electricdomain of the part ferroelectric thin film layer corresponding to gap 109 partly, along with the increase of electric field E3, as shown in Fig. 5 (b), in the part ferroelectric thin film layer 305 of the correspondence of the below in gap 309, also the local of the surface part in gap 309 is namely exposed to, electricdomain is wherein reversed, also namely electricdomain 3051 partial inversion forms the electricdomain 3053b as shown in Fig. 5 (b), the electricdomain of other parts of ferroelectric thin film layer 305 is not owing to substantially affecting (or electric field E3 gives birth to reversion to its under-effected its electricdomain that makes) by electric field E3, electricdomain is not reversed, the corresponding electricdomain 3051b formed as shown in the figure, the polarised direction of electricdomain 3053b is basic contrary with the polarised direction of electricdomain 3051b.Wherein, electricdomain 3053b is that the electric field component utilizing electric field E3 on the direction contrary with the polarised direction of electricdomain 3051 realizes overturning, and therefore, when the coercive voltage of ferroelectric thin film layer is known, can calculates formation the minimum of electricdomain 3053b and read voltage V
read.
Now, the adjoiner of the ferroelectric thin film layer segment with electricdomain 3051b and the ferroelectric thin film layer segment with electricdomain 3053b, also the boundary's wall namely between electricdomain 3051b and electricdomain 3053b or interface, thus charged domain wall or domain boundary 3058 can be produced, thus, mainly based on domain wall electrical conduction mechanism, between read-write electrode part 3073 and read-write electrode part 3071, produce conductive channel 3058, i.e. " domain wall conductive channel ", corresponding generation read current signal I
read, now read current I
readfor On state (i.e. ON state), represent and read logical signal " 0 ".
Therefore, above read operation process, is different from the electric charge reading method of the ferroelectric memory of traditional capacitance structure completely, achieves the mode that electric current reads logical signal in the embodiment of the application.
Further, at read current signal I
readafter, read-write electrode part 3073 and read-write electrode part 3071 between read voltage signal V
readremove, as shown in Fig. 5 (b), electric field E3 disappears, now, under the effect of depolarising field, electricdomain 3053b can affect by electricdomain 3051b can be reversed to roughly original polarised direction, also be electricdomain 3053b pop-off, the electricdomain 3051 of the state before substantially returning to read operation, domain wall 3058 also disappears substantially, and before produced conductive channel also disappears.Therefore, the logical message " 0 " that ferroelectric memory 10 is stored before a read operation does not change after read operation, achieves non-destructive and reads.
Meanwhile, it is also to be appreciated that in another embodiment, disappear and the polarised direction of electricdomain 3053b not before reversion read back operation even if may there is electric field E3, also namely conductive channel is opened all the time, due to read signal V after read signal removes
readdirection be relatively-stationary, electricdomain 3053b can not affect the logical message of storage, and the existence of conductive channel also can not affect the logical message read thereafter.Further, be appreciated that, when carrying out write operation after its this read operation process, electricdomain 3053b is certain to by repolarization, and conductive channel is wiped free of.
Continue as shown in Fig. 5 (b), in this embodiment, the ferroelectric thin film layer segment with electricdomain 3053b has that the volume of the ferroelectric thin film layer segment of electricdomain 3051b is less relatively may be better, the accounting that namely the ferroelectric thin film layer segment (such as electricdomain 3053b) of the electricdomain of local reversion also occurs in read procedure is the smaller the better, by designing the thickness of ferroelectric thin film layer 305, area parameters, reading the spacing d in voltage and/or gap 309, the read operation performance of this ferroelectric memory can be optimized.Alternatively, the spacing d in gap 309 is less than or greater than the thickness of ferroelectric thin film layer 305.
It will be appreciated that, although be more than for example is described with electricdomain 3051 place polarised direction stored logic information " 0 " of ferroelectric thin film layer 305, it will be understood by those skilled in the art that, the electricdomain 3051/3053 place polarised direction of ferroelectric thin film layer 305 also can represent stored logic information " 1 "/" 0 ", voltage signal direction in corresponding write operation and read operation changes, to realize similar read-write process as shown in Figure 4 and Figure 5 with also can carrying out applicability.
The read-write electrode pair that Figure 6 shows that the ferroelectric memory of the stored logic information " 0 " to one embodiment of the invention carries out I-V curve chart during voltage scanning operation.Composition graphs 5(b) shown in the ferroelectric memory of logical message " 0 " that stores, with gap d=55.6nm, the width w=62.5nm of read-write electrode part is example, first "+" is to scanning, similar electric field E3 as shown in Fig. 5 (b) is formed between read-write electrode pair, along with the increase of electric field, the local electricdomain being exposed to the surface part in gap 309 is reversed, progressively form such as [1, 1, 1] direction or [-1,-1,-1] direction electricdomain etc., charged domain wall or domain boundary expand gradually, when voltage is increased to+2.1V left and right, electric current between read-write electrode pair increases suddenly, the domain wall conductive channel being communicated with read-write electrode pair is formed in surperficial now ferroelectric thin film layer, read current is in " ON state (On) ", electric field between read-write electrode pair continues to increase, and when voltage V is increased to+3.1V left and right, electric current I sharply reduces, electric field between read-write electrode pair continues to increase, when voltage V is increased to+4V left and right, ferroelectric thin film layer segment between gap 309 and substrate 301 all reverses, also namely expand by the electricdomain 3053b such as shown in Fig. 5 (b) the electricdomain 3053a formed as shown in Figure 4 (a), achieve the reverse write of logical message " 1 ", now, domain wall 3054 is interrupted at substrate 101 place, therefore, electric current I is reduced to 0 substantially, " OFF state (Off) that it is in.
Continue by when scanning to 0V about+4V, because the electricdomain of the part ferroelectric thin film layer 305 in the described gap 309 of correspondence longitudinally runs through ferroelectric thin film layer 305, the electricdomain 3053a of the ferroelectric thin film layer segment also namely between gap 309 and substrate 301 all reverses, as shown in Figure 4 (a), under electricdomain 3051a is difficult to produce the effect of depolarising field to electricdomain 3053a, the polarised direction of electricdomain 3053a remains unchanged, and conductive channel does not also exist, therefore, electric current I is kept to 0 substantially.
It should be noted that, no matter reading and writing electrode pair upper offset read signal or write signal, electric field depth distribution in the ferroelectric thin film layer of gap location is read voltage with additional and change, when reading and writing read signal or the write signal of electrode pair upper offset certain voltage, more close to clearance surface (namely the degree of depth is less), electric field strength is larger, otherwise less, and gap location electric field depth distribution changes with the change of applied voltage.When the electric field of a certain degree of depth of distance clearance surface reach electricdomain reverse needed for coercive field E
ctime, all can there is similar reversion as shown in Fig. 4 (a) or Fig. 5 (b) in the electricdomain of local ferroelectric thin film layer more than this degree of depth.Therefore, the voltage of read signal is larger, and domain wall conductive channel is darker, and the voltage of write signal is larger, and domain wall 3054 is more perpendicular to the surface of substrate 301.
Announcement based on above write operation and read operation principle is known, read signal V
readread voltage the degree of depth of the domain wall conductive channel of formation should be made to be less than the thickness of ferroelectric thin film layer, such as, the electrical voltage point of the 3.1V be similar to as shown in Figure 6 should be less than.Therefore, read signal V
readread that voltage is less than write signal write voltage.
Figure 7 shows that the relation schematic diagram between the ON state read current I of the ferroelectric memory of one embodiment of the invention under the read signal of 3V and clearance distance d; Wherein, point represents experimental result value, solid line signal theoretical modeling result.Can find, read voltage V
readwhen=3V, ON state read current I direct ratio and d
-2.5, be also that gap d is less, ON state read current I can sharply increase, like this, even if ferroelectric memory is when scaled down, the gap of ferroelectric memory also can correspondingly reduce, and, ON state read current can't reduce, and it is high that logical message reads resolution.Therefore, small size, high-density applications is very beneficial for.
The ferroelectric memory of the embodiment of the present invention utilizes the gap arranged in read-write electrode layer, electric field when read operation between this gap can make the electricdomain of part described ferroelectric thin film layer local be inverted and set up domain wall conductive channel, therefore, the non-Destructive readout of current system can be realized; Further, the ON state current read when setting up domain wall conductive channel can increase with the reduction of the spacing in gap; Meanwhile, when write operation, the spacing in gap is less, and the thickness of ferroelectric thin film layer is less, and the voltage of writing of write signal also can be lower.Therefore, the ferroelectric memory of the embodiment of the present invention is very beneficial for small size, high-density applications, easily uses the requirement that device size is constantly scaled.
Figure 8 shows that the rear read current relation over time of the one writing of ferroelectric memory at +/-4V/" 0 " operation of one embodiment of the invention.Wherein, reading voltage is+3V, read current size is relevant with the direction of write signal, also namely direction is write with electricdomain relevant, further, no matter be in one state or in " 0 " state, read current in time can kept stable, show that the electricdomain based on principle write as described in Figure 4 has good retention performance, this ferroelectric memory 30 has good logical message retention performance.
It should be noted that, in the ferroelectric memory of above embodiment, can insert in gap 309 or partly insert insulating medium layer, also can not insert insulating medium layer.
Figure 9 shows that preparation method's process schematic of the ferroelectric memory of one embodiment of the invention.Shown in composition graphs 1 and Fig. 9, first, step S810, there is provided substrate 100 as shown in Figure 1, the Material selec-tion of substrate 100 determines jointly primarily of ferroelectric thin film layer 305, in this embodiment, substrate 301 can be Si substrate, and it is easy to compatible with semiconductor CMOS process.
Further, step S820, forms ferroelectric thin film layer 305.In this embodiment, ferroelectric thin film layer 305 can be, but not limited to be selected from following material: bismuth ferrite BiFeO
3, mix bismuth ferrite salt (Bi, the La) FeO of La
3, lead zirconate titanate salt (Pb, Zr) TiO
3or niobic acid lithium salts LiNbO
3; Ferroelectric thin film layer 305 can be formed by the preparation of the thin film deposition method such as sputtering, CVD, PLD.
In other embodiments, before also can forming ferroelectric thin film layer 305 in substrate, substrate first forms one deck dielectric layer.
Further, step S830, ferroelectric thin film layer 305 is formed read-write electrode pair.In this embodiment, read-write electrode pair is formed by reading and writing electrode part 3071 and reading and writing electrode part 3073, is formed with the gap 309 of nano-scale between read-write electrode part 3071 and read-write electrode part 3073; Read-write electrode pair can be selected from Pt, SrRuO
3, LaNiO
3in one or more combination; The thickness of read-write electrode part 3071 and/or read-write electrode part 3073 can be 5 ~ 100nm, such as, and 20nm; Read-write electrode part 3071 and/or read-write electrode part 3073 can be, but not limited to be formed by the preparation of the thin film deposition method such as sputtering, CVD, PLD.Gap 309 can be, but not limited to be obtained by electron beam process, nano impression or other photoetching methods.
In other embodiments, also insulating medium layer can be inserted in gap 309.
Like this, basically form the ferroelectric memory of embodiment as shown in Figure 1, in this embodiment, read-write electrode part 3071 and read-write electrode part 3073 are simultaneously for the formation of the upper electrode layer 307 of this memory.
Therefore, the FRAM process of the ferroelectric capacitor structure that the ferroelectric memory of the embodiment of the present invention is relatively traditional, does not need to form lower electrode layer, and structure is very simple, and preparation process is very simple, and cost is low.
In the above description, use directional terminology (such as " on ", D score etc.) and the parts of various execution modes that describe of the similar terms direction that represents the direction shown in accompanying drawing or can be readily appreciated by one skilled in the art.These directional terminology are used for relative description and clarification, instead of the orientation of any embodiment will be limited to concrete direction or orientation.
Above example mainly describes ferroelectric memory of the present invention and method of operation thereof and preparation method, especially describes read operation method and principle.Although be only described some of them embodiments of the present invention, those of ordinary skill in the art should understand, and the present invention can implement with other forms many not departing from its purport and scope.Therefore, the example shown and execution mode are regarded as illustrative and not restrictive, when do not depart from as appended each claim define the present invention spirit and scope, the present invention may contain various amendments and replacement.
Claims (17)
1. a non-destructive read-out ferroelectric memory, comprise ferroelectric thin film layer (305), it is characterized in that, also comprise the read-write electrode layer (307) be arranged in described ferroelectric thin film layer (305), be provided with the gap (309) being divided at least two parts in described read-write electrode layer (307), the polarised direction of the electricdomain (3051 or 3053) of described ferroelectric thin film layer (305) is not parallel to the normal direction of described read-write electrode layer (307) substantially;
Wherein, when being biased the write signal of first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted in the mode longitudinally running through described ferroelectric thin film layer (305);
Wherein, when being biased the read signal of first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), the electricdomain local of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted and sets up domain wall conductive channel (3058).
2. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, when being biased the write signal of second direction opposite to the first direction between two parts in the adjacent described gap (309) in described read-write electrode layer (307), initial polarization direction is got back in described electricdomain (3053a) reversion that the mode making longitudinally to run through described ferroelectric thin film layer (305) is inverted.
3. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, in described read-write electrode layer, at least two parts of (307) comprise the first read-write electrode part and the second read-write electrode part, described first read-write electrode part and the second read-write electrode part composition read-write electrode pair, described write signal or read signal are biased on described read-write electrode pair.
4. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, configure the thickness of described ferroelectric thin film layer (305) and/or the spacing (d) in described gap with enable biased pre-sizing write voltage effect under the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) be inverted in the mode longitudinally running through described ferroelectric thin film layer (305).
5. the non-destructive read-out ferroelectric memory as described in claim 1 or 4, it is characterized in that, configure the thickness of described ferroelectric thin film layer (305) and/or the spacing (d) in described gap with make biased pre-sizing read voltage effect under the electricdomain local of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) can be inverted and set up domain wall conductive channel (3058).
6. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, the spacing (d) in described gap is more than or equal to 2 nanometers and is less than or equal to 500 nanometers, or is more than or equal to 5 nanometers and is less than or equal to 100 nanometers;
The width (w) in described gap is more than or equal to 5 nanometers and is less than or equal to 500 nanometers.
7. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, also comprise substrate (100), described ferroelectric thin film layer (305) is arranged on described substrate (100).
8. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, described ferroelectric thin film layer (305) is bismuth ferrite BiFeO
3, mix bismuth ferrite salt (Bi, the La) FeO of La
3, lead zirconate titanate salt (Pb, Zr) TiO
3or niobic acid lithium salts LiNbO
3.
9. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, the thickness of described ferroelectric thin film layer (305) is more than or equal to 5 nanometers and is less than or equal to 500 nanometers;
The thickness of described read-write electrode layer (307) is more than or equal to 5 nanometers and is less than or equal to 100 nanometers.
10. non-destructive read-out ferroelectric memory as claimed in claim 1, it is characterized in that, by controlling the crystal orientation that described ferroelectric thin film layer (307) grows, to such an extent as to the normal direction of the substantially not parallel described read-write electrode layer (307) of the polarised direction of the electricdomain of described ferroelectric thin film layer (305) (3051,3053).
11. non-destructive read-out ferroelectric memories as claimed in claim 1, is characterized in that, be received in or partly insert insulating dielectric materials in described gap (309).
The preparation method of 12. 1 kinds of non-destructive read-out ferroelectric memories as claimed in claim 1, is characterized in that concrete steps comprise:
Substrate (301) is provided;
Form ferroelectric thin film (305); And
At the upper read-write electrode layer (307) formed with described gap (309) of described ferroelectric thin film layer (305).
13. preparation methods as claimed in claim 12, is characterized in that, described gap (309) are by carrying out electron beam process or nano impression formation to the metal flat bed forming read-write electrode layer (307).
The write operation method of 14. 1 kinds of non-destructive read-out ferroelectric memories as claimed in claim 1, is characterized in that: the write signal (V of biased first direction between two parts in the adjacent described gap (309) in read-write electrode layer (307)
write1), the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is inverted in the mode longitudinally running through described ferroelectric thin film layer (305), thus write the first logical message (" 1 ");
Write signal (the V of second direction biased opposite to the first direction between two parts in the adjacent described gap (309) in read-write electrode layer (307)
write2), initial polarization direction is got back in described electricdomain (3053a) reversion that the mode making longitudinally to run through described ferroelectric thin film layer (305) is inverted, thus write the second logical message (" 0 ").
15. write operation methods as claimed in claim 14, it is characterized in that, in ferroelectric thin film layer (305), domain wall (3054) is formed, the upper surface of the through described ferroelectric thin film layer (305) of this domain wall (3054) and lower surface between the described electricdomain (3053a) be inverted in the mode longitudinally running through described ferroelectric thin film layer (305) and the described electricdomain (3051a) be not inverted.
The read operation method of 16. 1 kinds of non-destructive read-out ferroelectric memories as claimed in claim 1, it is characterized in that: the read signal of biased first direction between two parts in the adjacent described gap (309) in read-write electrode layer (307), set up domain wall conductive channel by the size of current read between these two parts to judge the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) whether to be locally inverted, thus read the logical message stored;
After removing read signal, the electricdomain that in read operation process, local is inverted returns back to the polarised direction before read operation substantially, thus described domain wall conductive channel is eliminated automatically.
17. methods of operation as claimed in claim 16, is characterized in that, when described read signal read voltage fixing, the ON state current (I) when setting up described domain wall conductive channel increases with the reduction of the spacing (d) in described gap;
Described read signal to read voltage larger, the accounting being inverted part in the electricdomain of the described ferroelectric thin film layer of part (305) of corresponding described gap (309) is larger;
Described read signal to read voltage larger, the degree of depth on the surface of the described domain wall conductive channel relative gap (309) of formation is darker, reads voltage with the thickness making the degree of depth of described domain wall conductive channel be less than described ferroelectric thin film layer described in arranging;
Described read signal read that voltage is less than described write signal write voltage.
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| JP2017557241A JP6543727B2 (en) | 2015-01-24 | 2015-06-26 | Nondestructive read-out ferroelectric memory and method of manufacturing and operating the same |
| US14/916,889 US9685216B2 (en) | 2015-01-24 | 2015-06-26 | Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same |
| PCT/CN2015/082439 WO2016115826A1 (en) | 2015-01-24 | 2015-06-26 | Non-destructive readout ferroelectric memory and manufacturing method and operating method therefor |
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| CN104637948B (en) | 2017-11-17 |
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