CN104635300A - Preparation method for epoxy resin multimode optical waveguide - Google Patents
Preparation method for epoxy resin multimode optical waveguide Download PDFInfo
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- CN104635300A CN104635300A CN201510077752.2A CN201510077752A CN104635300A CN 104635300 A CN104635300 A CN 104635300A CN 201510077752 A CN201510077752 A CN 201510077752A CN 104635300 A CN104635300 A CN 104635300A
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- optical waveguide
- epoxy resin
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Microelectronics & Electronic Packaging (AREA)
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- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a preparation method for an epoxy resin multimode optical waveguide. The epoxy resin multimode optical waveguide is prepared from epoxy resin produced by Japan NTT (Nippon Telegraph And Telephone) as a material by adopting non-contact photolithography. The preparation method is simple and feasible, is low in cost, is compatible with a preparation process of a printed circuit board, and is suitable for large-scale industrial production of photoelectric printed circuit boards. The invention further discloses an effective developer used in the preparation process.
Description
Technical field
The present invention relates to a kind of preparation method of novel, easy, low cost epoxy resin multimode lightguide, belong to the light network communications field.
Background technology
UV-curable epoxy (UV-cured Epoxy Resin) has the advantages such as high thermal stability (glass transition temperature is about 200 DEG C), low optical transmission loss (0.10dB/cm 850nm) and refractive index controlled range large (1.48-1.60), than being more suitable in light network.From theory, can photoetching process be adopted but contact exposure can not be carried out as second U-8, proximity lithography (noncontact exposure) can only be adopted; In addition, the more difficult effective organic solvent of one that finds makees developer.There is not yet the research report preparing epoxy resin multimode lightguide with contactless photoetching process.The present inventor is preparing in the development process of epoxy resin multimode lightguide with contactless photoetching process, explores a whole set of the complete preparation technology making epoxy resin multimode lightguide with contactless photoetching process, and finds a kind of effective developer.
Summary of the invention
The present invention propose with contactless photoetching process make the preparation method of epoxy resin multimode lightguide and a kind of effective developer-anhydrous alcohol being applicable to prepare epoxy resin multimode lightguide and acetone by volume 1:2 carry out the solution that mixes.
Make the preparation method of epoxy resin multimode lightguide with contactless photoetching process, comprise the following steps:
(1) FR4 substrate is cleaned: use the ultrasonic cleaning 5 minutes, 10 minutes, 5 minutes respectively of acetone, absolute ethyl alcohol, deionized water successively, then dry up with nitrogen, to put into vacuum drying chamber for subsequent use.
(2) optical waveguide under-clad layer is made;
fR4 substrate applies the covering epoxy resin that refractive index is 1.50 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
to covering epoxy resin be scribbled and remove the sample after bubble, being positioned on the wafer-supporting platform of sol evenning machine; Environmentally humiture, design sol evenning machine spin coating proceeding, make and have certain thickness even under-clad layer epoxy resin thin film, and use ultraviolet photolithographic machine exposure curing, the exposure curing time is 10 minutes; 90 DEG C of further firm times of baking are 10 minutes, finally make the optical waveguide under-clad layer that smooth surface is smooth;
(3) optical waveguide core layer is made;
optical waveguide under-clad layer applies the sandwich layer epoxy resin that refractive index is 1.52 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Environmentally temperature and humidity design sol evenning machine spin coating proceeding: i.e. rotating speed and rotational time, prepares the even sandwich layer epoxy resin thin film with certain thickness; Then use litho machine to be exposed sandwich layer by contactless photoetching process, the time shutter is about 4 minutes; Expose in the high-temperature baking case of latter 90 DEG C and carry out front baking, baking time is 5 minutes;
after front baking completes, develop to sample, developer used is the organic solvent of special preparation; Just obtain the ridge optical waveguide that smooth surface, sidewall are straight, have certain geometrical shape after development, and its cross sectional dimensions is 50 μm × 50 μm;
uv-exposure is carried out to ridge optical waveguide and solidifies ridge optical waveguide further; Finally toast 10 minutes again.
(4) optical waveguide top covering is made;
the sample making ridge optical waveguide applies the covering epoxy resin that refractive index is 1.50 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Environmentally temperature design sol evenning machine spin coating proceeding, the even top covering epoxy resin thin film with certain thickness is prepared in spin coating; And use ultraviolet photolithographic machine exposure curing, make the optical waveguide top covering that smooth surface is smooth;
rear baking is carried out to sample.
beneficial effect of the present invention
(1) this preparation method is simple, cost is very low, and mutually compatible with printed circuit board (PCB) preparation technology, is applicable to the large-scale industrial production of opto-electrical printed circuit board;
(2) the epoxy resin multimode lightguide function admirable obtained by the method is used;
(3) can be widely used in the low-loss optically connection communication of opto-electrical printed circuit board.
Accompanying drawing explanation
Fig. 1 is preparation technology's process flow diagram of epoxy resin multimode lightguide;
Fig. 2 is the ridge optical waveguide surface Scanning Electron microscope figure without top covering;
Fig. 3 is waveguide core layer thickness;
Fig. 4 is optical waveguide core layer width;
Fig. 5 is the loss figure of epoxy resin multimode lightguide;
Fig. 6 is the thermal stability figure of epoxy resin multimode lightguide.
Embodiment
embodiment one
This embodiment is carried out according to the following steps:
(1) FR4 substrate is cleaned: use the ultrasonic cleaning 5 minutes, 10 minutes, 5 minutes respectively of acetone, absolute ethyl alcohol, deionized water successively, then dry up with nitrogen, to put into vacuum drying chamber for subsequent use.
(2) optical waveguide under-clad layer is made;
fR4 substrate applies the covering epoxy resin that refractive index is 1.50 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
to covering epoxy resin be scribbled and remove the sample after bubble, being positioned on the wafer-supporting platform of sol evenning machine; Environment temperature is 23-25 DEG C, humidity is under 50% condition; Spincoating conditions: first, with bottom gear rotating speed 510RPM, rotates 2 times, each 12 seconds; Finally, bottom gear rotating speed 510RPM, 6 seconds time, top gear rotating speed 1500RPM, 10 seconds time, low speed-high-speed and continuous rotates 3 times; To expose light intensity for 15mw/cm
2, the time shutter is carry out exposure curing for condition in 10 minutes, makes the optical waveguide under-clad layer that smooth surface is smooth; Make the under-clad layer epoxy resin thin film that uniform ground thickness is about 50um.
(3) optical waveguide core layer is made;
optical waveguide under-clad layer applies the sandwich layer epoxy resin that refractive index is 1.52 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Temperature is 23-25 DEG C, humidity is under 45%-50% condition; Spincoating conditions: first, take rotating speed as 510RPM, rotational time is 9 seconds, carries out 2 low speed rotation; Finally, with slow-speed of revolution 510RPM, its rotational time is 9 seconds, high rotating speed 1810RPM, and its rotational time is 12 seconds, carries out 2 low speed-high-speed and continuous spin coatings; Each spin coating stops the bubble in removing rete to carry out next spin coating again; With the width of lay photoetching mask plate printing opacity part be 40um, spacing between lay photoetching mask plate and substrate is 300um, exposure light intensity is for 15mw/cm
2, the time shutter is carry out photoetching as contactless photoetching condition in 2 minutes; Within 3 minutes, front baking is carried out with baking temperature 90 DEG C, baking time after photoetching;
after front baking completes, carry out development 4 minutes to sample, be put in after development in anhydrous alcohol and clean 50 seconds, taking-up dries up, and makes that smooth surface, sidewall are straight, the long-pending ridge optical waveguide being approximately 50um × 50um of lightguide cross section;
to ridge optical waveguide to expose light intensity for 15mw/cm
2, 6 minutes time shutter carried out uv-exposure and solidify optical waveguide further.
(4) optical waveguide top covering is made;
the sample making ridge optical waveguide applies the covering epoxy resin that refractive index is 1.50 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Environment temperature is 23-25 DEG C, humidity is under 45%-50% condition; First, with bottom gear rotating speed 510RPM, rotate 2 times, each 9 seconds; Finally, bottom gear rotating speed 510RPM, 6 seconds time, top gear rotating speed about 1200RPM, 6 seconds time, low speed-high-speed and continuous rotates 6 times; To expose light intensity for 15mw/cm
2, the time shutter is carry out exposure curing for condition in 18 minutes; Make the top covering epoxy resin thin film that uniform ground thickness is 81um;
to sample with baking temperature be 90 DEG C, baking time is carry out rear baking in 30 minutes.
embodiment 2
(1) FR4 substrate is cleaned: use the ultrasonic cleaning 5 minutes, 10 minutes, 5 minutes respectively of acetone, absolute ethyl alcohol, deionized water successively, then dry up with nitrogen, to put into vacuum drying chamber for subsequent use.
(2) optical waveguide under-clad layer is made;
fR4 substrate applies the covering epoxy resin that refractive index is 1.50 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
to covering epoxy resin be scribbled and remove the sample after bubble, being positioned on the wafer-supporting platform of sol evenning machine; Environment temperature is 23-25 DEG C, humidity is under 45%-50% condition; First, bottom gear rotating speed 510RPM, rotates 2 times, each 12 seconds; Finally, bottom gear rotating speed 510RPM, 6 seconds time, top gear rotating speed 1500RPM, 15 seconds time, low speed-high-speed and continuous rotates 2 times; To expose light intensity for 15mw/cm
2, the time shutter is carry out exposure curing in 20 minutes; Make the under-clad layer epoxy resin thin film that uniform ground thickness is about 50um.
(3) optical waveguide core layer is made;
optical waveguide under-clad layer applies the sandwich layer epoxy resin that refractive index is 1.52 ± 0.005, avoids in coating process in rete, producing residual bubble as far as possible, after having applied, be put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Temperature is 23-25 DEG C, humidity is under 40%-50% condition, spincoating conditions: first, and take rotating speed as 510RPM, rotational time is 9 seconds, carries out 2 low speed rotation; Finally, with slow-speed of revolution 510RPM, its rotational time is 9 seconds, high rotating speed 1810RPM, and its rotational time is 15 seconds, carries out 2 low speed-high-speed and continuous spin coatings; Each spin coating stops the bubble in removing rete to carry out next spin coating again; With the width of lay photoetching mask plate printing opacity part be 40um, spacing between lay photoetching mask plate and substrate is 300um, exposure light intensity is for 15mw/cm
2, the time shutter is carry out photoetching as contactless photoetching condition in 90 seconds; Within 60 seconds, front baking is carried out with baking temperature 90 DEG C, baking time after photoetching;
after front baking completes, carry out development 2 minutes to sample, be put in after development in anhydrous alcohol and clean 50 seconds, taking-up dries up, and makes that smooth surface, sidewall are straight, lightguide cross section amasss ridge optical waveguide for being approximately 50um × 50 um;
to ridge optical waveguide to expose light intensity for 15mw/cm
2, exposure time within 10 minutes, carry out uv-exposure and solidify ridge optical waveguide further.
(4) optical waveguide top covering is made;
the sample making ridge optical waveguide applies the covering epoxy resin that refractive index is 1.50 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
will after coating and the sample removing bubble is placed on the wafer-supporting platform of sol evenning machine; Environment temperature is 23-25 DEG C, humidity is under 40%-50% condition; First, with bottom gear rotating speed 510RPM, rotate 2 times, each 9 seconds; Finally, bottom gear rotating speed 510RPM, 6 seconds time, top gear rotating speed 1000RPM, 6 seconds time rotated 4 times with low speed-high-speed and continuous; To expose light intensity for 15mw/cm
2, the time shutter is carry out exposure curing in 20 minutes; Make the top covering epoxy resin thin film that uniform ground thickness is about 80um;
rear baking was carried out in 20 minutes with baking temperature 90 DEG C, baking time to sample.
Claims (4)
1. a preparation method for epoxy resin multimode lightguide, is characterized in that, comprises the following steps:
(1) FR4 substrate is cleaned;
(2) optical waveguide under-clad layer is made;
fR4 substrate applies the covering epoxy resin that refractive index is 1.50 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
utilize sol evenning machine to make after removing bubble and there is certain thickness even under-clad layer film, and use ultraviolet photolithographic machine exposure curing, make the optical waveguide under-clad layer that smooth surface is smooth;
(3) making of optical waveguide core layer;
optical waveguide under-clad layer applies the sandwich layer epoxy resin that refractive index is 1.52 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
make with sol evenning machine spin coating after removing bubble and there is certain thickness homogeneous core layer film, use litho machine to adopt contactless photoetching process to expose core layer film, carry out front baking after exposure and bake;
after front baking completes, adopt a kind of organic solvent of special preparation to develop to sample, finally make the ridge optical waveguide that smooth surface, sidewall are straight, have certain geometrical shape; And its cross sectional dimensions is 50 μm × 50 μm;
uv-exposure is carried out to solidify ridge optical waveguide further again to ridge optical waveguide sandwich layer;
(4) optical waveguide top covering is made;
the sample making ridge optical waveguide applies the covering epoxy resin that refractive index is 1.50 ± 0.005, after having applied, is put in the residual bubble of removing in high vacuum environment;
utilize sol evenning machine spin coating to make after removing bubble and have certain thickness even top covering film, the thickness of this film is guaranteed to cover waveguide core layer completely, uses ultraviolet photolithographic machine to carry out exposure curing to top covering, makes the optical waveguide top covering that smooth surface is smooth;
rear baking is carried out to sample.
2. preparation method as claimed in claim 1, it is characterized in that, top covering thickness in described step (2), (3), (4), core layer thickness, under-clad layer thickness, depend on the process conditions such as environment temperature, humidity, rotating speed, rotational time used in sol evenning machine spin coating process.
3. preparation method as claimed in claim 1, it is characterized in that, in described step (3), the width of optical waveguide core layer depends on the width of lay photoetching mask plate printing opacity part, the spacing between lay photoetching mask plate and substrate, the exposure process conditions such as light intensity, time shutter; Wherein expose light intensity in photoetching process and should be greater than 10mw/cm
2.
4. preparation method as claimed in claim 1, is characterized in that, in described step (3), effective developer of special preparation is: anhydrous alcohol and acetone carry out the solution mixed according to volume ratio 1:2; Developing process is: first develop 3-4 minute in a developer, then clean 50s in anhydrous alcohol, finally dries up with nitrogen.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507580A (en) * | 2001-07-24 | 2004-06-23 | Jsr株式会社 | Positive type radiosensitive composition and method for forming pattern |
CN1620620A (en) * | 2002-09-20 | 2005-05-25 | 凸版印刷株式会社 | Optical waveguide and method for manufacturing same |
JP2010175741A (en) * | 2009-01-28 | 2010-08-12 | Hitachi Chem Co Ltd | Method of manufacturing flexible optical waveguide |
CN102016666A (en) * | 2008-04-24 | 2011-04-13 | 松下电工株式会社 | Method for manufacturing optical waveguide |
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2015
- 2015-02-13 CN CN201510077752.2A patent/CN104635300A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507580A (en) * | 2001-07-24 | 2004-06-23 | Jsr株式会社 | Positive type radiosensitive composition and method for forming pattern |
CN1620620A (en) * | 2002-09-20 | 2005-05-25 | 凸版印刷株式会社 | Optical waveguide and method for manufacturing same |
CN102016666A (en) * | 2008-04-24 | 2011-04-13 | 松下电工株式会社 | Method for manufacturing optical waveguide |
JP2010175741A (en) * | 2009-01-28 | 2010-08-12 | Hitachi Chem Co Ltd | Method of manufacturing flexible optical waveguide |
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