CN104629946B - Composition for post-CMP cleaning - Google Patents

Composition for post-CMP cleaning Download PDF

Info

Publication number
CN104629946B
CN104629946B CN201410641916.5A CN201410641916A CN104629946B CN 104629946 B CN104629946 B CN 104629946B CN 201410641916 A CN201410641916 A CN 201410641916A CN 104629946 B CN104629946 B CN 104629946B
Authority
CN
China
Prior art keywords
cleaning
composition
post
chemical mechanical
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410641916.5A
Other languages
Chinese (zh)
Other versions
CN104629946A (en
Inventor
张斗瑛
金炳郁
赵泰杓
尹锡壹
许舜范
韩莹圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastern Shimikan Co Ltd
Original Assignee
Eastern Shimikan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastern Shimikan Co Ltd filed Critical Eastern Shimikan Co Ltd
Publication of CN104629946A publication Critical patent/CN104629946A/en
Application granted granted Critical
Publication of CN104629946B publication Critical patent/CN104629946B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to a composition for post-chemical mechanical polishing cleaning, and more particularly, to a composition for post-chemical mechanical polishing cleaning of a semiconductor substrate including metal wiring and a metal film, particularly a semiconductor substrate with exposed metal wiring, in a semiconductor manufacturing process. The cleaning composition of the present invention can effectively remove impurities attached to the surface of a semiconductor workpiece without damaging metal wiring, and can produce an excellent semiconductor without leaving residues on the surface to contaminate the workpiece after cleaning.

Description

Composition for post-CMP cleaning
Technical Field
The present invention relates to a composition for post-chemical mechanical polishing (post CMP) cleaning, and more particularly, to a composition for post-CMP cleaning of a semiconductor substrate including metal wiring and a metal film, particularly, a semiconductor substrate with exposed metal wiring, in a semiconductor manufacturing process.
Background
With the miniaturization of semiconductor devices and the multilayering of wiring structures, methods capable of more precisely planarizing the substrate surface are required at each stage of the semiconductor manufacturing process. In particular, when using multiple layers of metal, such as copper, deposited on a silicon substrate for connection of the active regions of the silicon wafer, the following steps are performed: the surface is planarized by depositing copper in lines etched in the interlayer dielectric by a Damascene process and removing excess copper.
In the planarization process, a Chemical mechanical polishing (hereinafter, referred to as CMP) process is generally used in which a silicon wafer is pressed against a polishing cloth and rotated while slurry in which polishing particles and chemicals are mixed is supplied, thereby polishing and planarizing an insulating film or a metal material. The surface of the silicon wafer can be effectively planarized by such a polishing method combining chemical removal and mechanical removal.
However, since the polishing particles or chemicals used in the CMP process contaminate the wafer surface, which may cause pattern defects or poor adhesion and poor electrical characteristics, it is necessary to completely remove the polishing particles or chemicals. In order to remove these contaminants, cleaning after CMP is generally performed by brushing, which simultaneously exerts a chemical action by a cleaning liquid and a physical action by a sponge brush.
However, the quality of the manufactured semiconductor is deteriorated by cleaning the surface of the liquid crystal sheet by deposition of an unexpected substance, and wedge-shaped corrosion is caused along the interface between the metal film of Ta, TaN, etc. and the copper wiring by contact of the cleaning liquid with the exposed copper wiring, thereby possibly causing a so-called side-slit phenomenon which decreases the reliability of the device.
Therefore, there is still a need for a cleaning composition which can effectively remove contaminants from the wafer surface and can prevent corrosion of metals during cleaning.
Disclosure of Invention
The invention provides a composition for post-CMP cleaning, which can effectively remove contaminants from the surface of a wafer and prevent corrosion of metal components such as copper when a wafer containing the metal components is post-CMP cleaned.
The invention provides a composition for cleaning after chemical mechanical polishing, which comprises tetraalkylammonium hydroxide (tetraalkylammonium hydroxide), ascorbic acid, citric acid and deionized water, and does not contain amine compounds except the tetraalkylammonium hydroxide.
The composition for post-CMP cleaning of the present invention can effectively remove impurities attached to the surface of a semiconductor workpiece without damaging metal wiring, and can produce an excellent semiconductor without leaving residues on the surface to contaminate the workpiece after cleaning.
Detailed Description
The composition for post-CMP cleaning comprises tetraalkylammonium hydroxide, ascorbic acid, citric acid and deionized water, and does not contain amine compounds except the tetraalkylammonium hydroxide.
The terminology used throughout the description is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" or "comprising," "includes" or "including," do not specifically refer to certain features, integers, steps, components or groups thereof, but do not preclude the presence or addition of other features, integers, steps, components or groups thereof.
Specific examples of the present invention will be described in detail below, but the present invention is not limited to the specific forms described below. Various modifications may be made to the present invention, and all modifications, equivalents, or alternatives based on the technical idea of the present invention are intended to be included in the scope of the present invention.
Throughout this specification, the semiconductor workpiece refers to a microelectronic device that has not completed its fabrication process, typically a silicon wafer that includes an active region formed on a surface.
The composition for post-CMP cleaning comprises tetraalkylammonium hydroxide, ascorbic acid, citric acid and deionized water, and does not contain amine compounds except the tetraalkylammonium hydroxide.
Hereinafter, each component that can be contained in the composition for post-chemical mechanical polishing cleaning of the present invention will be specifically described.
First, according to one aspect of the present invention, a composition for post-CMP cleaning includes tetraalkylammonium hydroxide. The tetraalkylammonium hydroxide functions to effectively remove contaminants, such as an abrasive slurry composition used in a CMP process, reaction products generated by a reaction between the abrasive slurry composition and an abrasive surface, and the like, from the surface of a semiconductor workpiece.
The tetraalkylammonium hydroxide may be one that is generally used in the art to which the present invention pertains, and is not particularly limited, and for example, tetraalkylammonium hydroxides that are generally used in the art to which the present invention pertains may be usedThe alkyl groups of the tetraalkylammonium hydroxide are each independently C1～C10The linear or branched alkyl tetraalkylammonium hydroxide of (1), preferably, tetramethylammonium hydroxide or tetraethylammonium hydroxide can be used.
In the composition for post-chemical mechanical polishing cleaning, the content of such tetraalkylammonium hydroxide may be about 0.05 to 2 wt%, preferably about 0.05 to 1.5 wt%, and more preferably about 0.1 to 1 wt%, relative to the total weight of the composition. If the content is less than about 0.05 wt%, the cleaning effect as a composition for cleaning after chemical mechanical polishing cannot be sufficiently exhibited, and if the content exceeds about 2 wt%, the metal component is seriously corroded, whereby metal particles remain on the wafer surface, so that problems caused by the metal particles may occur when a subsequent process is performed.
According to one aspect of the invention, a composition for post-chemical mechanical polishing cleaning comprises ascorbic acid. Metal wiring, such as copper wiring, formed on the surface of a semiconductor workpiece is easily damaged by the cleaning composition. The ascorbic acid may act as a preservative for such metal wiring.
In the composition for post-chemical mechanical polishing cleaning, the ascorbic acid may be contained in an amount of about 0.1 to 5% by weight, preferably about 1 to 5% by weight, and more preferably about 1 to 3% by weight, relative to the total weight of the composition. If the content is less than about 0.1% by weight, the effect as a corrosion inhibitor is not sufficiently exhibited, resulting in the possibility that metal wiring, particularly copper wiring, formed on the surface of the semiconductor workpiece may be damaged, and if the content exceeds about 5% by weight, excessive ascorbic acid may hinder removal of contaminating substances from the wafer surface, resulting in the problem of contaminant residue.
According to one aspect of the invention, a composition for post-chemical mechanical polishing cleaning comprises citric acid (citric acid). The citric acid can be used as a chelate to effectively remove metal particles in pollutants remained on a semiconductor workpiece, and can also play a role of a preservative for metal wiring and the like.
In the composition for post-CMP cleaning, the citric acid may be present in an amount of about 0.1 to 5 wt%, preferably about 1 to 5 wt%, and more preferably about 1 to 3 wt%, relative to the total weight of the composition. If the content is less than about 0.1 wt%, the effect as a chelate compound and a preservative is not sufficiently exhibited, and if the content exceeds about 5 wt%, the excessive citric acid hinders the removal of contaminants from the wafer surface and reacts with organic substances not removed, thereby further contaminating the wafer surface.
According to one aspect of the present invention, a composition for post-CMP cleaning comprises deionized water. The deionized water can play a role of a solvent for enabling the contents of the tetraalkylammonium hydroxide, the ascorbic thrombus and the citric acid to be uniform, and can also play a role of effectively removing pollutants remained on a workpiece, particularly a cleaning solution of water-soluble pollutants.
This deionized water content is the balance other than the tetraalkylammonium hydroxide, ascorbic acid, and citric acid. For example, in the composition for post-CMP cleaning, the deionized water may be present in an amount of about 90 to 99 wt% relative to the total weight of the composition.
According to an aspect of the present invention, the composition for post-chemical mechanical polishing cleaning contains no amine compound other than the above tetraalkylammonium hydroxide.
In general, conventional compositions for post-chemical mechanical polishing cleaning contain amine-based compounds including ethylenediamine (ethylene diamine), aminopropanol (aminopropanol), monoethanolamine (monoethanolamine), methylethanolamine (methylethanolamine), aminoethylethanolamine (aminoethylethanolamine), aminodipropylamine (aminobispyramine), methylaminoethanol (methylaminoethanol), triethylaminoethanol (triethylaminoethanol), aminoethoxyethanol (aminoethoxyethanol), diethanolamine (diethanolamine), triethanolamine (triethanolamine), alkanolamines (alkylolamines) of C2 to C5, 1- (2-hydroxyethyl) piperazine (1- (2-hydroxyethyl) piperazine), 1- (2-aminoethyl) piperazine (1- (2-aminoethylpiperazine), 1- (2-aminopiperazine) 1- (2-hydroxyethyl) piperazine (1- (2-ethylpiperazine), and 3- (methyl-3-propyl) piperazine (aminopropyrone), aminopropanol (aminopropanol), monoethanolamine (methyl ethanolamine), triethanolamine (methyl ethanolamine), and triethanolamine (methyl ethanolamine (3-2-hydroxyethyl) piperazine (3-methyl morpholine), 2-methylpiperazine (2-methylpiperazine), 1-methylpiperazine (1-methylpiperazine), 1-amino-4-methylpiperazine (1-amino-4-methylpiperazine), 1-benzylpiperazine (1-benzylpiperazine), 1-phenylpiperazine (1-phenylpiperazine), mixtures thereof and the like, but the present invention does not contain an amine compound as described above in addition to tetraalkylammonium hydroxide.
When contaminants are removed from the wafer surface, corrosion of metal components such as copper wiring on the wafer becomes a serious problem, and such corrosion of metal components is often caused by amine compounds contained in the cleaning composition. Since the amine compound is contained in the cleaning composition, the cleaning composition is highly likely to be alkaline, and the metal component on the wafer, particularly copper (Cu), is greatly affected by the alkaline cleaning solution. Therefore, in order to prevent corrosion of copper, no amine compound is included in addition to the tetraalkylammonium hydroxide.
As described above, since the wafer contains no amine compound other than tetraalkylammonium hydroxide, contaminants can be more effectively removed from the wafer surface, and the effect of preventing corrosion of metal components such as copper can be obtained.
In addition, a composition used as a slurry in chemical mechanical polishing is generally neutral in nature, but since additives such as hydrogen peroxide and distilled water are added thereto, the slurry used in the final chemical mechanical polishing becomes acidic. Since many contaminants generated during chemical mechanical polishing are generated due to acidity of the slurry, it is preferable to use an acidic cleaning solution rather than an alkaline cleaning solution in order to effectively remove such contaminants.
In order to effectively remove contaminants, the cleaning composition of the present invention contains no ammonium compound other than tetraalkylammonium hydroxide, and is therefore acidic. For example, the pH of the cleaning composition of the present invention is preferably about 1 to 5, more preferably about 1 to 2.5, but is not limited thereto.
The method for cleaning after chemical mechanical polishing by using the composition for cleaning after chemical mechanical polishing can comprise the following steps: and contacting the composition for post-CMP cleaning with a semiconductor workpiece subjected to a CMP process.
The cleaning composition used after the chemical mechanical polishing is, as described above, a cleaning method generally used in the art to which the present invention pertains can be used in addition to the use of such a cleaning composition. For example, a batch type (batch type) cleaning method in which the substrate is directly immersed in the cleaning liquid, a single wafer type (single wafer type) cleaning method in which the cleaning liquid is sprayed onto the surface of the substrate through a nozzle while the substrate is rotated, and the like can be used, and the following methods can be further used in combination: a brushing method using a polyvinyl alcohol sponge brush or the like, or a cleaning method using high-frequency ultrasonic waves or ultrasonic waves.
The semiconductor workpiece subjected to the chemical mechanical polishing process, which may include metal lines, barrier materials and dielectrics, may be the subject of cleaning with the cleaning composition of the present invention.
The metal line may include a metal commonly used in the art to which the present invention pertains, such as copper, silver, gold, platinum, etc., preferably copper.
Also, the barrier material may include a barrier material (barrier metal) commonly used in the art to which the present invention pertains, such as tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), tungsten (W), tungsten nitride (WN), and a mixture thereof.
Hereinafter, the operation and effect of the present invention will be described in more detail with reference to specific examples of the present invention. These embodiments are merely examples of the invention, and the scope of the claims of the invention is not limited thereto.
< example >
Preparation of composition for post-CMP cleaning
< examples 1 to 3 and comparative examples 1 to 7 >
The following table 1 was mixed with tetramethylammonium hydroxide (TMAH), ascorbic acid (ASA), citric acid, mono alcohol amine (MEA) which is an amine compound other than TMAH, and deionized water to prepare a composition for post-cmp cleaning. (unit: wt%)
[ Table 1]
< example of experiment >
Cleaning power evaluation experiment
After depositing a 5.5KA Thermal Oxide layer (Thermal Oxide), 250A tantalum (Ta), 1KA copper seed layer (Cu seed) on a silicon Si wafer, 15KA copper (Cu) is plated (Electro-Plating, EP), thereby producing a wafer with a surface exposed with a metal component. The fabricated wafer is put into a CMP apparatus and chemical mechanical polishing is performed with a polishing slurry containing Planar solution, hydrogen peroxide and distilled water.
After the chemical mechanical polishing, the chemical mechanical polished wafer was put into an On track apparatus, sprayed with the cleaning liquid composition prepared in the examples and comparative examples for about 1 minute, then cleaned with deionized water, and dried with nitrogen gas. After drying, the residue and contaminants were detected by a detection device from Negevtech corporation as being removed.
The results of the tests were evaluated by X, Delta and O, and when the residue and contamination of 1 μm or more were detected to be 10000 or more, the cleaning power was evaluated as X, when the residue and contamination of 1 μm or more were detected to be 5000 to 10000, the cleaning power was evaluated as Delta, and when the residue and contamination of 1 μm or more were detected to be 1000 to 5000, the cleaning power was evaluated as O.
Evaluation test of Corrosion prevention
As in the cleaning force evaluation test, cleaning was performed after chemical mechanical polishing. After cleaning, all the lower films were evaluated as "good" if no corrosion occurred, and as "x" if corrosion occurred.
The results of the experiment are shown in table 2.
[ Table 2]
Evaluation results of detergency Evaluation results of Corrosion prevention
Example 1 ○ ○
Example 2 ○ ○
Example 3 ○ ○
Comparative example 1 △ ○
Comparative example 2 △ ○
Comparative example 3 △ ○
Comparative example 4 △ ○
Comparative example 5 × ×
Comparative example 6 △ ○
Comparative example 7 △ ○
Comparative example 8 ○ ×
Comparative example 9 △ ×
Comparative example 10 ○ ×
From the above results, the cleaning power of examples 1 to 3 is superior to that of comparative examples 1 to 7. That is, the cleaning power when TMAH, ascorbic acid and citric acid are all included is better than that in the absence of one of them.
Further, it was confirmed that the cleaning power was not greatly different between the case where MEA was contained as an amine compound other than TMAH and the case where MEA was not contained, and that the cleaning power was slightly decreased in comparative example 9 containing an excessive amount of MEA, in addition to TMAH, ascorbic acid and citric acid.
In the evaluation of corrosion resistance, the metal films of examples hardly corroded, and showed excellent corrosion prevention effect. In particular, in comparative example 5 which did not contain ascorbic acid and citric acid as preservatives, serious corrosion of the lower film occurred. In comparative examples 8 to 10 containing other amine compounds than TMAH, corrosion of metal components occurred, and it was confirmed that the corrosion force was not the cleaning force but the problem was caused as compared with the case where only TMAH was contained as the amine compound.

Claims (2)

1. A composition for post-CMP cleaning, comprising: 0.05 to 2% by weight of tetraalkylammonium hydroxide, 0.1 to 5% by weight of ascorbic acid, 0.1 to 5% by weight of citric acid and the balance of deionized water, relative to the total weight of the composition; the pH value is 1-2.5.
2. The composition for post-chemical mechanical polishing cleaning according to claim 1, wherein the tetraalkylammonium hydroxide is tetramethylammonium hydroxide.
CN201410641916.5A 2013-11-12 2014-11-11 Composition for post-CMP cleaning Active CN104629946B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0136944 2013-11-12
KR1020130136944A KR102134577B1 (en) 2013-11-12 2013-11-12 Composition for post cmp cleaning

Publications (2)

Publication Number Publication Date
CN104629946A CN104629946A (en) 2015-05-20
CN104629946B true CN104629946B (en) 2019-12-31

Family

ID=53209200

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410641916.5A Active CN104629946B (en) 2013-11-12 2014-11-11 Composition for post-CMP cleaning

Country Status (2)

Country Link
KR (1) KR102134577B1 (en)
CN (1) CN104629946B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101789251B1 (en) 2017-03-17 2017-10-26 영창케미칼 주식회사 Composition for post chemical mechanical polishing cleaning

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
CN101952406A (en) * 2007-12-06 2011-01-19 弗劳恩霍弗应用技术研究院 Texturing and cleaning medium for the surface treatment of wafers and use thereof
CN102311863A (en) * 2010-07-09 2012-01-11 气体产品与化学公司 Method for wafer dicing and composition useful thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US7763577B1 (en) * 2009-02-27 2010-07-27 Uwiz Technology Co., Ltd. Acidic post-CMP cleaning composition
US8765653B2 (en) * 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
CN105869997A (en) * 2011-10-21 2016-08-17 安格斯公司 Amine-free post-CMP composition and using method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
CN101952406A (en) * 2007-12-06 2011-01-19 弗劳恩霍弗应用技术研究院 Texturing and cleaning medium for the surface treatment of wafers and use thereof
CN102311863A (en) * 2010-07-09 2012-01-11 气体产品与化学公司 Method for wafer dicing and composition useful thereof

Also Published As

Publication number Publication date
CN104629946A (en) 2015-05-20
KR102134577B1 (en) 2020-07-16
KR20150054471A (en) 2015-05-20

Similar Documents

Publication Publication Date Title
EP1287550B1 (en) Post chemical-mechanical planarization (cmp) cleaning composition
EP2164938B1 (en) New antioxidants for post-cmp cleaning formulations
EP2028262B1 (en) Improved alkaline chemistry for post-cmp cleaning
EP1845555B1 (en) Post chemical-mechanical planarization (cmp) cleaning composition
JP4550838B2 (en) Improved alkaline chemical product for post-cleaning of chemical mechanical planarization
US20070225186A1 (en) Alkaline solutions for post CMP cleaning processes
TWI751969B (en) Treatment composition for chemical mechanical polishing, chemical mechanical polishing method and cleaning method
EP1577934A1 (en) Alkaline post-chemical mechanical planarization cleaning compositions
KR102314305B1 (en) Cleaning composition and cleaning method
TWI619806B (en) Chemical mechanical polishing treatment composition, chemical mechanical polishing method and cleaning method
CN110418834B (en) post-CMP cleaning composition
CN104629946B (en) Composition for post-CMP cleaning
US8067352B2 (en) Aqueous cleaning composition for semiconductor copper processing
KR101988481B1 (en) Cleaning solution of semiconductor substrate
WO2023121944A1 (en) Method of reducing defects on polished wafers
KR101406761B1 (en) Cleaning solution composition and the cleaning method therewith
CN117106528A (en) Semiconductor substrate cleaning liquid composition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant