CN104625420A - Machining method for non-vacuum maskless high-conductivity metal nanowire - Google Patents
Machining method for non-vacuum maskless high-conductivity metal nanowire Download PDFInfo
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- CN104625420A CN104625420A CN201410830123.8A CN201410830123A CN104625420A CN 104625420 A CN104625420 A CN 104625420A CN 201410830123 A CN201410830123 A CN 201410830123A CN 104625420 A CN104625420 A CN 104625420A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
- B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a machining method for a non-vacuum maskless high-conductivity metal nanowire and belongs to the micro-nano machining field. According to the machining method, femtosecond laser is used for machining; firstly, reshaping is performed on incident laser light, so that a double-light-spot beam is produced; afterwards, the position of a sample is controlled through a three-dimensional displacement platform, so that the double-light-spot beam and the sample move relatively to form a machined pattern, wherein the line width is controlled by controlling a focusing plane and the surface of the sample. Based on the method, machining does not need to be performed under the vacuum condition, the requirement for the machining environment is lowered, and the cost can be reduced; a mask is not required, so the machining steps are simplified, and machining efficiency is improved; the metal nanowire is produced based on the mature electron beam evaporation method, no namometer clearance exists inside the metal nanowire, and the metal nanowire is high in conductivity; besides, the width of the metal nanowire can be adjusted within a large range. The machining method for the metal nanowire is reliable, efficiency and flexible.
Description
Technical field
The present invention relates to a kind of processing method of the antivacuum high conductivity metal nano wire without mask, belong to micro-nano technology field.
Background technology
In recent years, metal nanometer line achieved in microelectronic, plasmon, photoelectronics and bio-sensing field and used widely.Because the reduction of the size of nano wire is significant to integrated level, portable degree, device capabilities, the processing method of nano wire more and more comes into one's own.Traditional processing method is as methods such as electron beam process, ion beam processing, the photoetching of extreme ultraviolet light, the requirement of size can be met, but, these methods require high to processing environment: require under vacuum processing, complicated operation, in large area processing, efficiency is lower, and there is chemical contamination.These defects hinder its utilization in nano wire processing.
It is a kind of antivacuum processing method without mask that femtosecond laser directly writes processing, can reduce the requirement to processing environment, simple to operate, working (machining) efficiency is high.And it is when applying to materials processing, there is the features such as re cast layer reduces, efficiency is higher, threshold value is stable, the range of work is wide.Nano wire processing method based on femtosecond laser comprises: the method for femtosecond laser sintering nano particle, the method etc. of femtosecond laser reduction silver nitrate.These methods high efficiency can process nano level metal nanometer line.But the defect that these methods exist there is nano-pore or gap in nano wire, makes the electrical conductivity of the nano wire processed lower, be less than 1/10th of body material.Electrical conductivity is the key property of nano wire, and low conductivity seriously hinders the utilization of nano wire at electricity field.
Summary of the invention
The object of the invention is the problem that electrical conductivity in order to solve existing employing nano wire that is antivacuum, that obtain without the processing method of mask is lower, a kind of processing method of the antivacuum high conductivity metal nano wire without mask is provided.
The object of the invention is to be achieved through the following technical solutions.
A processing method for the antivacuum high conductivity metal nano wire without mask, concrete steps are as follows:
Step one, use phase shaper carry out shaping to femtosecond laser beam, are formed.This light beam is made up of the luminous point that two intensity is identical, forms the more weak dark space of light intensity between two luminous points;
Two luminous point light beams of step 2, employing step one gained are processed at the metallic film of nanoscale.The region that light intensity is stronger can make film remove, and dark space between two luminous points due to light intensity more weak and retain, mobile beam can form nano wire.
The device realizing the method comprises: femto-second laser, energy conditioner, phase shaper, the first planoconvex spotlight, the second planoconvex spotlight, focusing objective len, plated film sample, three-dimensional mobile platform, computer.
Annexation: femto-second laser produces femto-second laser pulse, by energy conditioner adjusting energy; Thereafter phase-shaped is carried out by phase shaper; Light beam after shaping enters focusing objective len after the 4f system that the first planoconvex spotlight and the second planoconvex spotlight form; Light beam line focus object lens focus to plated film sample surfaces and process; Plated film sample is positioned in three-dimensional mobile platform; Femto-second laser, phase shaper, three-dimensional mobile platform control by computer.
The course of work:
(1) femto-second laser produces femtosecond laser, and intensity distribution is Gaussian Profile.Laser, by energy conditioner, carries out energy adjustment.
(2) laser is by phase shaper, to the phase place of laser carry out shaping make laser beam about phase by pi, this process does not change the intensity of laser.
(3) laser after shaping is passed to focusing objective len by 4f system (being made up of two planoconvex spotlights), and the diffraction in transmittance process can be eliminated by 4f system.
(4) phase-shaped light beam is after focusing objective len, due to the diffraction effect in focusing, can produce the change of intensity, i.e. intensity shaping.By the phase distribution of control phase shaping, produce two luminous point light beam in focal plane, two luminous point light beam is arranged side by side, and forms the dark space that light intensity is more weak between two light beams.
(5) plated film sample is positioned in three-dimensional mobile platform, makes material surface concordant with focal plane by moving displacement platform.Plated film sample utilizes e-beam evaporation metal-coated membrane in vitreous silica substrate, and the kind of metallic film can determine according to demand.
(6) two luminous point light beam is used to delineate sample.Owing to be the more weak dark space of intensity in the middle of two luminous point light beam, metallic film retains, and the light intensity on both sides comparatively greatly, and material is removed.Linear-moving light beam, thus form metal wire.By controlling beam intensity, suitable energy can make metal wire reach nanoscale, produces metal nanometer line.
(7) by Quality control surface and the relative position of focussing plane, the width of dark space can be changed, and then control the width of reserve area, thus change the width of metal wire.When focal plane is away from sample surfaces, dark space is comparatively large, and the width of metal wire can be comparatively large, thus realize the processing of large-scale metal line-width.
Beneficial effect
1, the processing method of a kind of antivacuum high conductivity metal nano wire without mask of the present invention, antivacuum, without under mask prerequisite, there is not nano gap in the nano wire inside processed, thus electrical conductivity is higher;
2, the processing method of a kind of antivacuum high conductivity metal nano wire without mask of the present invention, adopt antivacuum, without the processing technology of mask, the working (machining) efficiency of nano wire can be improved, cut down finished cost;
3, the processing method of a kind of antivacuum high conductivity metal nano wire without mask of the present invention, processing nanowire size can reach nanoscale, can meet the requirement of the growing integrated level to device, portable degree;
4, the processing method of a kind of antivacuum high conductivity metal nano wire without mask of the present invention, can by regulating the distance of focussing plane and sample, and significantly regulate the width of nano wire, width can reach micron dimension.
Accompanying drawing explanation
Fig. 1 is the structural representation of an embodiment of patent of the present invention;
Fig. 2 is the intensity distribution of phase distribution and two luminous point light beam;
Fig. 3 is process schematic diagram.
Wherein 1-femto-second laser, 2-energy conditioner, 3-phase shaper, 4-first planoconvex spotlight, 5-second planoconvex spotlight, 6-focusing objective len, 7-plated film sample, 8-three-dimensional mobile platform, 9-computer.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention will be further described.
Embodiment 1
A processing method for the antivacuum high conductivity metal nano wire without mask, concrete steps are as follows:
Step one, use phase shaper carry out shaping to femtosecond laser beam, form two luminous point light beam.This light beam is made up of the luminous point that two intensity is identical, forms the more weak dark space of light intensity between two luminous points;
Light beam after step 2, use shaping is processed at the metallic film of nanoscale.The region that light intensity is stronger can make film remove, and dark space between two luminous points due to light intensity more weak and retain, mobile beam can form nano wire.
The device realizing the method comprises: femto-second laser 1, energy conditioner 2, phase shaper 3, first planoconvex spotlight 4, second planoconvex spotlight 5, focusing objective len 6, plated film sample 7, three-dimensional mobile platform 8, computer 9.
Annexation: femto-second laser 1 produces femto-second laser pulse, by energy conditioner 2 adjusting energy; Thereafter phase-shaped is carried out by phase shaper 3; Light beam after shaping enters focusing objective len 6 after the 4f system that the first planoconvex spotlight 4 and the second planoconvex spotlight 5 form; Light beam line focus object lens 6 focus to plated film sample 7 surface and process; Plated film sample 7 is positioned in three-dimensional mobile platform 8; Femto-second laser 1, phase shaper 3, three-dimensional mobile platform 8 control by computer 9.
The course of work:
(1) femto-second laser 1 produces femtosecond laser, and the pulse duration is 35fs, and intensity distribution is Gaussian Profile.Laser carries out energy adjustment by energy conditioner 2.
(2) use computer 9 to load phase diagram on phase shaper, the laser of suitable energy, by phase shaper 3, carry out shaping, and the intensity of laser does not change to the phase place of laser.Shown in loaded phase diagram figure as left in Fig. 2, there are two phase places herein: namely 0 and π.Two phase place proportions are identical.
(3) laser after shaping is passed to focusing objective len by 4f system, and the diffraction in transmittance process can be eliminated by 4f system.4f system is made up of two identical planoconvex spotlights 5,6, and planoconvex spotlight 5 is 1 times of focal length apart from phase shaper 4; The spacing of lens is 2 times of focal lengths; Planoconvex spotlight 6 Range Focusing object lens are 1 times of focal length.Single lens focal length is 600mm.
(4) phase-shaped light beam is after focusing objective len 6, due to the diffraction effect in focusing, can produce the change of intensity, i.e. intensity shaping.By the phase distribution of control phase shaping, produce two luminous point light beam in focal plane, two luminous point light beam is arranged side by side, and forms the dark space that light intensity is more weak between two light beams, shown in figure as right in Fig. 2.In this embodiment, focusing objective len uses 50 times of object lens, and numerical aperture is 0.70.
(5) sample 7 is positioned in three-dimensional mobile platform 8, makes material surface concordant with focal plane by moving displacement platform 8.Sample utilizes e-beam evaporation metal-coated membrane in vitreous silica substrate, and the kind of metallic film can determine according to demand.In this embodiment, the kind of metal film is golden film, and wherein, thickness is 80nm.
(6) use computer 9 to control three-D displacement platform 8 to control, make the relatively two luminous point beam motion of sample.As shown in Figure 3, owing to be the more weak dark space of intensity in the middle of two luminous point light beam, metallic film retains, and the light intensity on both sides comparatively greatly, and material is removed.Linear-moving light beam, thus form metal wire.By controlling beam intensity, suitable energy can make metal wire reach nanoscale, produces metal nanometer line.In this embodiment, the energy of use is respectively: 0.22 μ J, 0.36 μ J, 0.40 μ J.
(7) use electron scanning tunnel microscope to processed result pictures taken, the structure size of institute's processing result can be obtained.The physical dimension that 0.22 μ J, 0.36 μ J, 0.40 μ J obtain is respectively 640nm, 400nm, 280nm.
(8) use computer 9 to control three-D displacement platform 8 to control, the relative position of sample surfaces and focussing plane is changed, the width of dark space can be changed, and then control the width of reserve area, thus change the width of metal wire.When focal plane is away from sample surfaces, dark space is comparatively large, and the width of metal wire can be comparatively large, thus realize the processing of large-scale metal line-width.
(9) use electron scanning tunnel microscope to processed result pictures taken, the structure size of institute's processing result can be obtained.When regulating focussing plane to be respectively 8 μm from sample surfaces, live width can reach 10 μm.Visible, the method interiorly in a big way again can change live width (nanometer is to micron dimension).
(10) use Measurement of Semiconductors instrument to measure the electrical conductivity of institute's processing structure, can 1.16 × 10 be reached
7s/m, it is 1/3.5 of corresponding body material.Compare congenic method and there is clear superiority.
Claims (3)
1. a processing method for the antivacuum high conductivity metal nano wire without mask, is characterized in that: concrete steps are as follows:
Step one, use phase shaper carry out shaping to femtosecond laser beam, form two luminous point light beam; This light beam is made up of the luminous point that two intensity is identical, forms the more weak dark space of light intensity between two luminous points;
Two luminous point light beams of step 2, employing step one gained are processed at the metallic film of nanoscale; The region that light intensity is stronger can make film remove, and dark space between two luminous points due to light intensity more weak and retain, mobile beam can form nano wire.
2. realize the device of the processing method of a kind of antivacuum high conductivity metal nano wire without mask as claimed in claim 1, it is characterized in that: comprising: femto-second laser (1), energy conditioner (2), phase shaper (3), the first planoconvex spotlight (4), the second planoconvex spotlight (5), focusing objective len (6), plated film sample (7), three-dimensional mobile platform (8), computer (9); Femto-second laser (1) produces femto-second laser pulse, by energy conditioner (2) adjusting energy; Thereafter phase-shaped is carried out by phase shaper (3); Light beam after shaping enters focusing objective len (6) after the 4f system that the first planoconvex spotlight (4) and the second planoconvex spotlight (5) form; Light beam line focus object lens (6) focus to plated film sample (7) surface and process; Plated film sample (7) is positioned in three-dimensional mobile platform (8); Femto-second laser (1), phase shaper (3), three-dimensional mobile platform (8) control by computer (9).
3. the device of a kind of processing method of the antivacuum high conductivity metal nano wire without mask as claimed in claim 2, is characterized in that: the concrete steps of its course of work are as follows:
(1) femto-second laser (1) produces femtosecond laser, and intensity distribution is Gaussian Profile; Laser, by energy conditioner, carries out energy adjustment;
(2) laser is by phase shaper (3), to the phase place of laser carry out shaping make laser beam about phase by pi, this process does not change the intensity of laser;
(3) laser after shaping is passed to focusing objective len (6) by 4f system, and the diffraction in transmittance process can be eliminated by 4f system;
(4) phase-shaped light beam is after focusing objective len (6), due to the diffraction effect in focusing, can produce the change of intensity, i.e. intensity shaping; By the phase distribution of control phase shaping, produce two luminous point light beam in focal plane, two luminous point light beam is arranged side by side, and forms the dark space that light intensity is more weak between two light beams;
(5) plated film sample (7) is positioned in three-dimensional mobile platform (8), makes material surface concordant with focal plane by moving displacement platform; Plated film sample (7) utilizes e-beam evaporation metal-coated membrane in vitreous silica substrate, and the kind of metallic film can determine according to demand;
(6) two luminous point light beam is used to delineate sample; Owing to be the more weak dark space of intensity in the middle of two luminous point light beam, metallic film retains, and the light intensity on both sides comparatively greatly, and material is removed; Linear-moving light beam, thus form metal wire; By controlling beam intensity, suitable energy can make metal wire reach nanoscale, produces metal nanometer line;
(7) by Quality control surface and the relative position of focussing plane, the width of dark space can be changed, and then control the width of reserve area, thus change the width of metal wire; When focal plane is away from sample surfaces, dark space is comparatively large, and the width of metal wire can be comparatively large, thus realize the processing of large-scale metal line-width.
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Cited By (4)
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| CN110238513A (en) * | 2019-04-28 | 2019-09-17 | 大族激光科技产业集团股份有限公司 | The cutting method and device of MiniLED wafer |
| CN111185665A (en) * | 2020-01-21 | 2020-05-22 | 武汉铱科赛科技有限公司 | Circuit structure etching method, device, system and equipment |
| CN113042884A (en) * | 2021-05-06 | 2021-06-29 | 北京理工大学 | Femtosecond laser rotary type double-light-spot light beam micropore machining method |
| CN116967613A (en) * | 2023-09-21 | 2023-10-31 | 上海传芯半导体有限公司 | Device and method for removing metal film on surface of waste mask |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190726 Address after: 610061 1518, 15th Building, No. 55, Qinghe Linan Section, Jinjiang District, Chengdu City, Sichuan Province Patentee after: Chengdu Xinruide Technology Co., Ltd. Address before: 610061 No. 55, Qinghe-Linan Section, Jinjiang District, Chengdu City, Sichuan Province Patentee before: Jiang Qi |
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