CN104619060B - Light-emitting component and display device - Google Patents

Abstract

The invention relates to a light-emitting component of a resonator structure and a display device. The light-emitting component is capable of inhibiting luminance fluctuation even through, for example, the design value of the film thickness contrast ratio is bias. The light-emitting component has the resonator structure, and is provided with a first reflecting part, a second reflecting part, and a luminous layer arranged between the first reflecting part and the second reflecting part; one part of light resonant between the first reflecting component and the second reflecting part transmits through the first reflecting component or the second reflecting part, and the wavelength of the maximum resonator output spectrum of the resonator structure is located between the wavelength of the internal luminescent spectrum of the luminous layer and the wavelength of the maximum optical visual effect function.

Description

Light-emitting component and display device

(the application be based on into the National Phase in China date be December 12, Application No. in 2011 200980159845.2 (international application no：The divisional application of application for a patent for invention PCT/JP2009/002645))

Technical field

The present invention relates to light-emitting component and display device.

Background technology

EL element is known as the light-emitting component in the display devices such as display equipment and illuminator, wherein adopting With in applied voltage because electroluminescent (EL) phenomenon produces self luminous material.EL element is film like light-emitting component, its In the luminescent layer of organic material or inorganic material is formed between upper electrode and lower electrode, lighted by upper and lower electrode pair Layer applied voltage makes which light.

The light-emitting component of resonator structure (so-called microresonator structure) is have developed in recent years, and which is by making upper electrode It is completely reflecting mirror with the side in lower electrode, makes the opposing party be the pellicle mirror through a part of wavelength, so that luminescent layer is sent out The light for going out produces resonance (for example, referring to patent documentation 1,2).

A kind of light-emitting component is Patent Document 1 discloses, which makes the peak wavelength of internal illumination spectrum produce with resonance part The peak wavelength of multi interference spectrum mutually stagger, reduce dependence of the white to angle of visibility.Make the multi interference light of red (R) The peak wavelength of spectrum is offset to long wavelength side (+10nm), makes the peak wavelength of multi interference spectrum of green (G) to long wavelength Side (+4nm) offsets, and the peak wavelength of the multi interference spectrum of blue (B) is offset to short wavelength side (- 10nm), thus Reduce dependence of the white to field-of-view angle.

A kind of light-emitting component is also disclosed that in patent documentation 2, which makes the peak wavelength of internal illumination spectrum produce with resonance part The peak wavelength of raw multi interference spectrum mutually staggers, and reduces dependence of the white to angle of visibility.But, with patent documentation 1 not Together, which makes the peak wavelength of the multi interference spectrum of red (R) and blue (B) consistent with the peak wavelength of internal illumination spectrum.

Technology disclosed in patent documentation 1 and 2 is perhaps for such as giant display etc. requires the aobvious of big angle of visibility characteristic Showing device is effective, but the miniscope of personal use is specific in portable terminal, personal computer, navigation system etc. Under situation, the brightness disproportionation of frontal can exceed permissible range sometimes.

That is, in the case of using resonator structure, because of its filtering feature and the highly directive of luminous output, frontal Brightness increases.The display device of the display device of big angle of visibility characteristic, such as personal use is not needed to make use of the directivity, with The situations such as the TV of big angle of visibility are needed to compare, it is desirable to which the brightness disproportionation of frontal is less.But, the thin film of resonator structure Light-emitting component, its filtering feature are sensitive to distance between mirrors (resonator optical path length), if in process due to mismachining tolerance Make resonator optical path length uneven, then the chromaticity coordinates (excitation) and brightness flop of frontal can exceed permissible range sometimes.

Prior art literature

Patent documentation

Patent documentation 1：Japanese Patent Publication 2002-367770 publication

Patent documentation 2：Japanese Patent Publication 2007-316611 publication

The content of the invention

It is an example of problem to be solved by this invention above.An object of the present invention is to provide a kind of resonance The light-emitting component and display device of structure, even if thickness occurs to deviate with respect to design load, resonator optical path length changes, Luminance fluctuation can be suppressed.

The present invention light-emitting component be characterized in that, with resonator structure, the resonator structure include the first reflection part, Second reflection part and the luminescent layer being configured between first reflection part and the second reflection part；It is anti-described first Penetrate the first reflection part or described second described in a part of Jing of the light for occurring to resonate between part and second reflection part Reflection part is passed through, and the resonator output spectrum of the resonator structure reaches the wavelength of maximum, positioned at the luminescent layer Internal illumination spectrum reaches the wavelength and light of maximum and reaches between the wavelength of maximum depending on imitating function.

The display device of the present invention is characterized in that, with multiple resonator structures, the resonator structure includes the first reflection Part, the second reflection part and the luminescent layer being configured between first reflection part and the second reflection part；Described First reflection part or described second described in a part of Jing of the light resonated between one reflection part and second reflection part Reflection part is passed through, and the resonator output spectrum projected from the resonator structure reaches the wavelength of maximum, positioned at described The internal illumination spectrum of photosphere reaches the wavelength and light of maximum and reaches between the wavelength of maximum depending on imitating function.

Description of the drawings

Fig. 1 is the longitudinal section of the light-emitting component of first embodiment of the invention.

Fig. 2 is the top view of the light-emitting component of first embodiment of the invention.

Fig. 3 is the figure of spectrum when representing with blue (B) as object.

Fig. 4 is the figures of the rate of change RE with the relation of rate of change of brightness of luminous intensity when representing with blue (B) as object.

Fig. 5 is the figure of Thickness Variation when representing with blue (B) as object and the relation of front face brightness value.

Fig. 6 is the figure of spectrum when representing with blue (B) as object.

Fig. 7 is the figure of spectrum when representing with red (R) as object.

Fig. 8 is the figure of spectrum when representing with red (R) as object.

Fig. 9 is the figure of Thickness Variation when representing with red (R) as object and the relation of front face brightness value.

Figure 10 is the longitudinal section of the light-emitting component of four embodiment of the invention.

Figure 11 is the longitudinal section of the light-emitting component of fifth embodiment of the invention.

Symbol description

1 substrate

2 anodes

3 organic layers

31 hole injection layers

32 hole transporting layers

33 luminescent layers

34 electron supplying layers

4 negative electrodes

5 wall parts

Specific embodiment

Describe the preferred implementation of the light-emitting component and display device of the present invention with reference to the accompanying drawings in detail.Following In explanation, said as a example by having and sending redness (R), green (G), the display device of the light-emitting component of blue (B) light respectively It is bright.But, embodiments described below does not constitute the restriction of the technical scope to the present invention.

(first embodiment)

In example shown in Fig. 1 and Fig. 2, red (R), green (G), blue (B) light are sent in the public configuration of substrate 1 3 light-emitting components (R, G, B), form RGB unit.Fig. 1 is the longitudinal section of light-emitting component (R, G, B), and Fig. 2 is top view.It is real In the display device on border, multiple light-emitting components (R, G, B) are arranged on substrate 1 and forms viewing area, using configuration (not shown) Drive circuit outside viewing area carries out passive matrix, or carries out active drive to each element configuration driven circuit.

Light-emitting component (R, G, B) in present embodiment, as shown in figure 1, being laminated on substrate as the first reflection part Anode 2, organic layer 3 and the negative electrode 4 as the second reflection part, light is projected from the surface side for being formed with thin film, i.e., so-called Top light emitting (top emission) structure.These RGB light-emitting components are separated by the wall part 5 for being referred to as dike (bank).Also may be used So that organic layer or the inorganic layers such as diaphragm seal are laminated on negative electrode 4.Although without display in figure, it is also possible to be further laminated for preventing The only thin film or substrate of external light reflection.

Anode 2 is double-layer structure, including reflecting electrode 21 and transparency electrode 22.Anode 2 is connected with hole injection layer 31 The high material of materials'use work function.Specifically, the material of reflecting electrode 21 can using such as Al, Cr, Mo, Ni, Pt, Au, The metals such as Ag, or the alloy containing these metals or intermetallic compound etc..The thickness of reflecting electrode 21 is, for example, 100nm.Instead Radio pole 21 for the meansigma methodss of the reflectance of 400～700nm wavelength light are more than 80%, preferred high reflectance.In addition, transparent The material of electrode 22 can for example use the metal oxygen such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) Compound etc..The thickness of transparency electrode 22 is, for example, 75nm.Although eliminating diagram in fig. 1 and 2, anode 2 is connected with extraction Electrode (distribution electrode).Anode 2 can also be the single-layer electrodes with reflecting electrode 21.

In organic layer 3, the layer of a part can be made up of inorganic material.Can also further split and there is more layers, Or single layer can also be made to there is multiple layers of function and reduce stacking number.Organic layer 3 shown in Fig. 1 is tied for multilamellar Structure, which starts to be sequentially laminated with hole injection layer 31, hole transporting layer 32, luminescent layer 33 and electron supplying layer from 2 side of anode 34.Organic layer 3 at least has luminescent layer 33, but in order to effectively facilitate electro optical phenomenon generation, is preferably configured hole Implanted layer 31, hole transporting layer 32 and electron supplying layer 34 etc..

When resonator structure is constituted, each light-emitting components of RGB have optimal resonator optical path length respectively.Fig. 1's In structure, reflecting electrode 21 is resonator optical path length with the spacing distance of the reflecting surface of negative electrode 4.As an example, for Red (R), to obtain optimum resonance device optical path length, makes stacking thickness be 300nm；For green (G), to obtain optimum resonance Device optical path length, makes stacking thickness be 235nm；For blue (B), to obtain optimum resonance device optical path length, stacking thickness is made For 200nm.Above-mentioned resonator optical path length is adjusted for example by the thickness of adjustment organic layer 3.But, as described above, adding It is difficult to entirely prevent thickness off-design value during work.Especially be difficult to control to film when organic layer 3 being formed using rubbing method It is thick.When ink-jet method film forming is for example passed through, the deviation of interelement thickness can reach more than 5%.

In structure shown in Fig. 1, as one, resonator optical path length is adjusted by changing the thickness of hole injection layer 31 Degree.Specifically, the thickness (design load) of the hole injection layer 31 of red (R) is 125nm；The hole injection layer 31 of green (G) Thickness (design load) is 65nm；The thickness (design load) of the hole injection layer 31 of blue (B) is 20nm.Tie in the resonator of RGB In structure, transfer layer 32, luminescent layer 33, electron supplying layer 34 thickness it is identical.For example, the thickness (design load) of hole transporting layer 32 For 30nm；The thickness (design load) of luminescent layer 33 is 30nm；The thickness (design load) of electron supplying layer 34 is 40nm.

Hole injection layer 31 and hole transporting layer 32 can be formed by the high material of hole transporting properties, for example, can use Star-like (starburst) amine such as the phthalocyanine compounds such as CuPc (CuPc), m-MTDATA, the polymer of benzidine-type amine, 4,4 '- Double [N- (1- naphthyls)-N- anilino-s]-biphenyl (4,4 '-bis [N- (1-naphthyl)-N-phenylamino]-biphenyl： NPB), 4-aminodiphenylamine (N-phenyl-p-phenylenediamine：The aryl tertiary amine such as PPD), 4- (di-p-tolyl ammonia Base) -4 '-[4- (di-p-tolyl amino) styryl] Stilbene (- 4 '-[4- (di-P- of 4- (di-P-tolylamino) Tolylamino) styryl] stylbenzene) etc. Stilbene (stilbene) compound, triazole derivative, styrylamine compound, The organic material of the fullerenes such as buckyballs, C60 etc..Can also use and disperse low molecule in Merlon Polymer material The macromolecule dispersion based material of material.But be not restricted to that above-mentioned material.

Luminescent layer 33 can be used and produce red (R), green (G), the material of blue (B) electro optical phenomenon.Luminescent layer 33 Material can for example use (8-hydroxyquinoline) aluminium complex (Alq3) ((8-hydroxyquinolinate) aluminum) Complex (Alq3)) etc. fluorescent type organo-metallic compound；4,4'- bis- (2,2- diphenylethyllenes)-biphenyl (4,4 '-bis (2, 2’-diphenylvinyl)-biphenyl：The aromatic series dimethylene compound such as DPVBi)；(bis- (2-methyl styrenes of 1,4- Base) the styryl benzene compound such as benzene (1,4-bis (2-methylstyryl) benzene)；3- (4- biphenyl) -4- phenyl -5- Tert-butyl-phenyl-1,2,4- triazoles (3- (4-biphenyl)-4-phenyl-5-t-butylphenyl-1,2,4-triazole： Triazole (triazole) derivant such as TAZ)；Anthraquinone (anthraquinone) derivant, fluorenes (fluonorene) derivant etc. are glimmering Light type organic material；Gather to benzene ethylene (polyparaphenylene vinylene：PPV) system, polyfluorene (polyfluorene) System, polyvinylcarbazole (polyvinylcarbazole：PVK) it is Polymer material；The phosphorescence such as platinum complex or iridium complex Type organic material.But be not restricted to that above-mentioned material.Organic material can not also be used, and use can produce electro optical phenomenon Inorganic material.

Electron supplying layer 34 can be formed by the high material of electron transport performance, for example can be using silicon such as PyPySPyPy Heterocyclic pentylene (silacyclopentadiene (silole)) derivant, nitre are for Fluorenone (nitro-substituted Fluorenone) the organic material such as derivant, anthraquinone bismethane (anthraquinodimethane) derivant；Three (8- hydroxyls Quinoline) aluminum (tris (8-hydroxyquinolinate) aluminum：) etc. Alq3 8-hydroxyquinoline (8-quinolinole) spreads out Biological metal complex；Metal phthalocyanine (metal phthalocyanine), 3- (4- biphenyl) -5- (4- tert-butyl-phenyls) - 4- phenyl -1,2,4- triazoles (3- (4-biphenyl) -5- (4-t-butylphenyl) -4-phenyl-1,2,4-triazole： TAZ) triazole derivative, 2- (4- xenyls) -5- (the 4- tert-butyl groups) -1,3,4- oxadiazoles (2- (the 4-biphenylyl) -5- such as (4-t-butyl)-1,3,4-oxadiazole：PBD) Deng oxadiazole derivatives, buckyballs, C60, CNT (carbon The fullerene such as nanotube).But it is not limited to above-mentioned material.

The material of negative electrode 4 can use the work function in the region contacted with electron supplying layer 34 low, negative electrode overall reflective and Through the little material of loss.Specifically, negative electrode 4 using metal or its compounds such as Al, Mg, Ag, Au, Ca, Li, or can contain There is alloy of above-mentioned metal etc. so as to be configured to monolayer or be laminated.In addition, can be in the region contacted with electron supplying layer 34 Thin lithium fluoride or lithium oxide etc. are formed, Electron Injection Characteristics are controlled.The thickness of negative electrode 4 is, for example, 10nm.As described above, this reality Apply in mode, using the top lighting structure that light is released in the side of film forming face, i.e. negative electrode side.Therefore, negative electrode 4 is semi-permeable Property electrode, for the light of 400～700nm wavelength transmitance meansigma methodss be, for example, more than 20%.Using such as electrode Thickness etc. adjusting transmitance.Although diagram is eliminated in Fig. 1 and Fig. 2, negative electrode 4 is connected with extraction electrode (wired electric Pole).

When further diaphragm seal is laminated on negative electrode 4, for example can be by little to vapor and OTR oxygen transmission rate transparent Inorganic material is formed.The material of diaphragm seal can for example use silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminium oxide (AlOx), aluminium nitride (AlNx) etc..

Referred to as the material of the wall part 5 of dike can for example use the photoresist of fluorine-containing composition.By making which fluorine-containing, to liquid State material can play a part of liquid repellency, therefore when using rubbing method film forming, can suppress liquid stream (so-called overlap). Also, it is preferred that forming wall part 5 by the material with light-proofness.

Here, compared with green (G) light-emitting component, the frontal brightness of blue (B) and red (R) light-emitting component, more The change of the luminous efficiency for easily causing because of peak wavelength shift, produces the luminance fluctuation more than permissible range.Wherein, with redness (R) compare, the luminance fluctuation for changing the blueness (B) for causing by resonator optical path length is bigger.Therefore, in the present embodiment, With blue (B) light-emitting component as object, even if thickness off-design value in process, resonator optical path length occurs to become Change, can also suppress the change of frontal brightness.For this purpose, in a structure of the in-vention, internal illumination spectrum, light is made to regard effect function Spectrum and the defeated device of resonance go out spectrum and meet aftermentioned condition.So-called internal illumination spectrum, refers to the luminescence generated by light (PL) of luminescent material Spectrum.So-called resonator output spectrum, refers to the spectrum of the light through resonator structure.Light is regarded at the maximum of effect function spectrum Wavelength, under vision improvement standard be 555nm.

That is, as shown in figure 3, making the peak of the internally positioned luminescent spectrum S1 of peak wavelength (λ S2) of resonator output spectrum S2 Value wavelength (λ S1) and, light regard imitate function spectrum peak wavelength (that is, 555nm) between.Because light regards the peak value ripple of effect function spectrum A length of common knowledge thus omit diagram.For convenience of description, the wavelength by luminous intensity for maximum is referred to as peak wavelength.

As described above, in the construction shown in fig. 1, blue (B) is made with optimum resonance device optical path length due to having determined The stacking thickness (design load) of the organic layer 3 of degree, therefore, also have determined that the peak wavelength (target of resonator output spectrum S2 Value).For example, resonator optical path length (design load) for 200nm when, peak wavelength (desired value) is 470nm.In addition, light regards effect The peak wavelength of function spectrum is 555nm.Therefore, in the present embodiment, select to show from the above-mentioned luminescent material listed Go out the luminescent material of internal illumination spectrum S1, make internal illumination spectrum S1 meet above-mentioned position relationship, and with the luminescent material shape Into luminescent layer 33.That is, the material of the spectrum for being presented desired is selected from the above-mentioned luminescent material enumerated to form luminescent layer.It is excellent Luminescent material of the peak wavelength of internal illumination spectrum S1 in the range of 450nm～480nm is selected, and makes resonator output spectrum The peak wavelength of S2 is located at long wavelength side relative to the peak wavelength of internal illumination spectrum S1.Further, with regard to internal illumination light Spectrum S1 long wavelength side tilted shape, preferably with light regard effect function spectrum short wavelength side slope inverse about into Ratio.Especially in the case of blue (B), the rake of the long wavelength side of internal illumination spectrum S1 drastically changes, and can make altogether Shake device output spectrum S2 peak wavelength be located at the region jumpy.

As preferred example, as shown in Figure 4 and Figure 5, peak wavelength (λ S2) place of resonator output spectrum S2 is interior Luminous intensity variations rate R of portion luminescent spectrum S1_EFor -0.03 [1/nm] below, preferably -0.05 [1/nm] is below.Fig. 4 is right Above-mentioned luminous intensity variations rate R when peak wavelength λ S2 are 470nm (design load)_EWith the rate of change of brightness RL when thickness changes (%) result calculated by relation.When Fig. 5 is that the thickness of such as luminescent layer 33 fluctuates near the design load, front is calculated bright The result of degree change.In example shown in Fig. 5, rate of change R in the drawing point of Fig. 4 is illustrated_EFor -0.017 [1/nm], -0.034 Result of calculation when [1/nm], -0.054 [1/nm].

The rate of change R of above-mentioned luminous intensity_EIt is that the inside at peak wavelength (λ S2) place in resonator output spectrum S2 is sent out The gradient of light spectrum S1 is obtained divided by the luminous intensity at wavelength (λ S2) place, according to R_E[1/nm]=[dE (λ S2)/d λ]/E (λ S2 formula) is tried to achieve.In addition, rate of change of brightness RL (%) is, order meets the optimum film thickness of NTSC excitations when being d0, in thickness Rate of change of brightness in the range of deviation d0 ± 2nm.Specifically, being according to rate of change of brightness RL [%]=[in the range of d0 ± 2nm The difference of brightness maximum～minimum]/the value tried to achieve of [brightness during d0] × 100.As shown in Figure 4 and Figure 5, the luminous unit of blue (B) Luminous intensity variations rate R in part_EIt is preferred that in -0.03 [1/nm] for starting to produce luminance fluctuation inhibition below, it is more excellent Being selected in can be compared with -0.05 [1/nm] of high inhibition luminance fluctuation below.

In the present embodiment, although the internal illumination spectrum at the preferably peak wavelength λ S2 of resonator output spectrum S2 The rate of change R of the luminous intensity of S1_EMeet above-mentioned condition, but except making rate of change R_EMeet outside above-mentioned condition, or as change Rate R_EMeet the condition of replacement of above-mentioned condition, the condition met shown in Fig. 6 can also be set.That is, set resonator output spectrum The peak wavelength λ S2 of S2 are located at, internally with internal illumination spectrum S1's on the rake of the long wavelength side of luminescent spectrum S1 (90～λ of λ between the corresponding wavelength of the scope (scope shown in solid in Fig. 6) of the 90%～50% of the maximum of luminous intensity 50)。

In order to meet above-mentioned various conditions, however it is not limited to be adjusted by selecting luminescent material, such as, it is also possible to Adjust the peak wavelength (desired value) of resonator output spectrum S2 to meet above-mentioned relation in the permissible range of excitation.Can pass through The thickness (design load) of organic layer 3 is adjusted adjusting the peak wavelength (desired value) of resonator output spectrum S2.Can also pass through Select luminescent material and thickness (design load) these two aspects of organic layer 3 is adjusted meeting above-mentioned condition.

In resonator structure, can carry out excitation has the design in larger leeway.On the other hand, it is blue (B) and red (R) brightness of light-emitting component can produce the brightness change beyond permissible range because of the peak wavelength shift of resonator output spectrum S2 It is dynamic.For example, thickness (equivalent to optical path length) corresponding with distance between mirrors is if change 5nm or so (5% of whole element thickness Left and right), peak wavelength also changes 5nm or so.For blue light emitting device, when the design load of peak wavelength is 470nm, thickness If increasing 5nm, the luminous efficiency of the peak wavelength (for example, 475nm) after skew changes up to more than 20%, thus results in big Brightness flop and image quality decline (brightness disproportionation).

That is, due to cause frontal image quality decline (brightness disproportionation) due to be resonator output spectrum S2 peak value Wavelength shift and light regard the relation of effect function spectrum, therefore, in the present embodiment, make the peak value ripple of resonator output spectrum S2 The peak wavelength and light of the internally positioned luminescent spectrum S1 of length regard effect function peak wavelength (that is, 555nm under vision improvement standard) it Between.Thus, offset to high luminous efficiency side in the peak wavelength (λ S2) for causing resonator output spectrum S2 because of mismachining tolerance When, the output that lights is reduced, conversely, peak wavelength (λ S2) to low luminous efficiency side offset when, light output increase, so as to can Suppress the luminance fluctuation of frontal.Calculate and find, the peak wavelength (λ of resonator output spectrum S2 in the case of blue (B) When S2) offseting in the range of ± the 2nm, the luminance fluctuation of frontal is within substantially ± 5%.

Light-emitting component shown in Fig. 1 is made up of the first and second reflection parts reflecting electrode and semi-permeable electrode, but not It is limited to this, it is also possible to form the reflectance coating with electrode independence.Now, the anode and negative electrode in the element side of the reflectance coating can be with It is transparency electrode.

(second embodiment)

Variation of the present embodiment for first embodiment, is to replace blue (B) luminous unit with red (R) light-emitting component Embodiment of the part as object.

That is, red (R) light-emitting component in the case of, as shown in fig. 7, being located at the peak wavelength of resonator output spectrum S2 The peak wavelength (λ S1) of internal illumination spectrum S1 and light are regarded between the peak wavelength (that is, 555nm) of effect function spectrum.

As described above, in the case of structure shown in Fig. 1, it has been determined that the stacking thickness (design load) of organic layer 3, so that right It is optimal resonator optical path length in red (R), thus also determines the peak wavelength (desired value) of resonator output spectrum S2. For example, resonator optical path length (design load) for 300nm when peak wavelength (desired value) be 620nm.In addition, light regards effect function The peak wavelength of spectrum is 555nm under vision improvement standard.Therefore, in the present embodiment, from the above-mentioned luminescent material listed In select the luminescent material of the internal illumination spectrum S1 that above-mentioned position relationship is presented, luminescent layer 33 is formed by the luminescent material.It is excellent Select luminescent material of the peak wavelength of internal illumination spectrum S1 in the range of 600nm～640nm, and resonator output spectrum S2 Peak wavelength relative to internal illumination spectrum S1 peak wavelength be located at short wavelength side.Further, internal illumination spectrum can be made The tilted shape of the short wavelength side of S1 is, with the long wavelength side that light regards effect function spectrum it is inclined reciprocal about into than Example.Especially in the case of red (R), the peak wavelength of resonator output spectrum S2 may be located at, internal illumination spectrum S1's The luminous intensity region jumpy of the rake of the rising of short wavelength side.

As the example for more having choosing, according to the reasons why identical with the result of calculation of Fig. 4 and Fig. 5, resonator output spectrum S2 Peak wavelength (λ S2) place internal illumination spectrum S1 luminous intensity rate of change R_EFor more than+0.03 [1/nm], preferably More than+0.05 [1/nm].

Further, in the present embodiment, although send out the inside at the preferably peak wavelength λ S2 of resonator output spectrum S2 The rate of change R of the luminous intensity of light spectrum S1_EMeet above-mentioned condition, but except making rate of change R_EMeet above-mentioned condition, or conduct Make rate of change R_EMeet the replacement condition of above-mentioned condition, the condition met shown in Fig. 8 can also be set.That is, set resonator defeated The peak wavelength λ S2 for going out spectrum S2 are located at, internally on the rake of the short wavelength side of luminescent spectrum S1 with internal illumination light Between the corresponding wavelength of scope (scope shown in solid of Fig. 8) of the 95%～50% of the maximum of the luminous intensity of spectrum S1 (λ 95～ λ50)。

Additionally, it is identical with the situation of blue (B), in order to meet above-mentioned condition, however it is not limited to the selection to luminescent material, than Such as, or in the permissible range of excitation the peak wavelength (desired value) of resonator output spectrum S2 is adjusted come on meeting State relation.Peak wavelength (the target of resonator output spectrum S2 can be adjusted by the thickness (design load) of regulation organic layer 3 Value).Above-mentioned bar can also be met by thickness (design load) these two aspects of selection luminescent material and regulation organic layer 3 Part.

As described above, when with the light-emitting component of red (R) as object, also making the peak wavelength of resonator output spectrum S2 The peak wavelength and light of internally positioned luminescent spectrum S1 regards the peak wavelength of effect function spectrum Between 555nm), thus, causing the peak wavelength (λ S2) of resonator output spectrum S2 because of fabrication error to high luminous efficiency one During the skew of side, the output that lights is reduced, and contrary peak wavelength (λ S2) lights to export when offseting to low luminous efficiency side to be increased, from And the luminance fluctuation of frontal can be suppressed.As shown in figure 9, calculate finding, resonator output spectrum S2 in the case of red (R) Peak wavelength when offseting in the range of ± the 2nm, within the luminance fluctuation of frontal is ± 5%.

(the 3rd embodiment)

In the first embodiment with blue (B) light-emitting component as object, lighted with red (R) in this second embodiment Element is object.But, can have institute in the first and second embodiments by the display device that multiple RGB light-emitting components are formed The blueness (B) of explanation and red (R) both light-emitting components, can suppress blue (B) and red (R) both luminance fluctuations.

(the 4th embodiment)

In the first～the 3rd embodiment, to adjusting RGB resonator light paths by changing the thickness of hole injection layer 31 The example of length is illustrated.But be not restricted to that this, it is also possible to as shown in Figure 10, adjusted by changing the thickness of luminescent layer 33 Whole RGB resonators optical path length.

(the 5th embodiment)

In the first～the 4th embodiment, it is illustrated by taking the light-emitting component of top lighting structure as an example.But and It is not limited to this structure, or bottom-emission structure as shown in figure 11.In example shown in Figure 11, by making Fig. 1's Reflecting electrode 21 is semi-permeable electrode, makes negative electrode 4 be reflecting electrode, and becomes bottom-emission structure.But the present invention is not limited Due to the structure shown in Figure 11.

(the 6th embodiment)

Below, illustrate manufacture Fig. 1 shown in RGB light-emitting components operation example.

First, the thin film of reflecting electrode 21, transparency electrode 22 is sequentially formed with evaporation or sputtering method etc..Can be flat by photograph Version printing art forms the pattern of above-mentioned electrode 21,22.Then, fluorine-containing photoresist is coated with substrate 1, is dried and film forming Afterwards, the wall part 5 with pattern as shown in Figure 1 is formed for example, by photolithography.For passive-type in the case of, Electrode 21,22 is formed as after striated, wall part 5 is formed.On the other hand, for it is active in the case of, by electrode 21,22 Be formed as the island being connected with each drive circuit, then form wall part 5.

Then, the fluent material of hole injection layer 32 is coated on the area separated by wall part 5 with such as inkjet nozzle etc. In domain, it is dried and film forming.For hole input layer 32, luminescent layer 33 are similarly respectively coated to each element using rubbing method, And film forming.Thickness can be adjusted by the coating weight of regulation such as fluent material.Then, electron transport is sequentially formed with vapour deposition method Layer 34 and negative electrode 4.Using masks such as metal masks, or using the dykes and dams shape of wall part 5, pattern can be formed to negative electrode 4.Example Such as passive-type in the case of, the pattern of negative electrode 4 can be formed as striated.On the other hand, for it is active in the case of, Pattern can not be formed, and becomes bucking electrode.By above-mentioned operation, the RGB light-emitting components shown in Fig. 1 and Fig. 2 can be manufactured.

As described above, according to the first～the 6th embodiment, in the light-emitting component with resonator structure, by making altogether Shake device output spectrum the internally positioned luminescent spectrum of peak wavelength peak wavelength and light regard effect function spectrum peak wavelength it Between, can suppress because of the luminance fluctuation caused by resonator optical path length inequality.In other words, even if thickness off-design value, due to Luminance fluctuation is little, and can tolerate that thickness is uneven to a certain extent, thus can improve productivity ratio reduces cost.

Technology described in above-mentioned embodiment is applied also for layer except can be applicable to organic film light-emitting component The inorganic thin film light-emitting component (electroluminescence, Light-Emitting Diode) of folded component structure.In addition, can be applicable on surface with rectangular The light emitting display of configuration light-emitting component.Can also be from the luminous structure of two side of the first and second reflection parts transmission. Further, to be not limited to RGB trichroism for the present invention, it is also possible to comprising a kind of color or two kinds of colors, or other colors.

More than, the present invention is described in detail with reference to specific embodiment, but in the spirit without departing from the present invention In the range of claim, various replacements, deformation and change can be carried out to mode and details, this is for this area one As knowledge those skilled in the art for be self-explantory.Therefore, protection scope of the present invention is not limited to above-mentioned reality The record of mode and accompanying drawing is applied, and should be determined according to the record of claims and its embodiment being equal to.

Claims (4)

1. a kind of light-emitting component, it is characterised in that：

With resonator structure, the resonator structure includes the first reflection part, the second reflection part and organic layer,

The resonator output spectrum of the resonator structure reaches the wavelength of maximum, positioned at the internal illumination light of the organic layer Spectrum reaches the wavelength and light of maximum and reaches between the wavelength of maximum depending on imitating function,

The rake of the long wavelength side of the internal illumination spectrum drastically changes, and the peak wavelength of resonator output spectrum is located at The region jumpy.

2. light-emitting component according to claim 1, it is characterised in that：

The resonator output spectrum reaches the rate of change R of the luminous intensity of the internal illumination spectrum at the wavelength of maximum_E Below -0.03.

3. light-emitting component according to claim 2, it is characterised in that：

The internal illumination spectrum reaches the wavelength of maximum in the range of 450nm～480nm.

4. a kind of display device, it is characterised in that：

With multiple resonator structures, the resonator structure includes the first reflection part, the second reflection part and is configured in described Organic layer between first reflection part and the second reflection part, first reflection part and second reflection part it Between there is a part of Jing of light for resonating described in the first reflection part or second reflection part pass through,

The resonator output spectrum of the resonator structure reaches the wavelength of maximum, positioned at the internal illumination light of the organic layer Spectrum reaches the wavelength and light of maximum and reaches between the wavelength of maximum depending on imitating function,

In one resonator structure, the internal illumination spectrum reaches the scope of the wavelength in 450nm～480nm of maximum Interior, the resonator output spectrum reaches the wavelength position that the wavelength of maximum reaches maximum relative to the internal illumination spectrum In long wavelength side, the rake of the long wavelength side of the internal illumination spectrum drastically changes, the peak of resonator output spectrum Value wavelength is located at the region jumpy,

In another described resonator structure, the internal illumination spectrum reaches the model of the wavelength in 600nm～640nm of maximum In enclosing, the resonator output spectrum reaches the wavelength that the wavelength of maximum reaches maximum relative to the internal illumination spectrum Positioned at short wavelength side, the resonator output spectrum reaches the wavelength of maximum and reaches most relative to the internal illumination spectrum The wavelength of big value is located at short wavelength side.