CN104617070A - Soldering method of electrode and silicon wafer of high-power semiconductor device - Google Patents
Soldering method of electrode and silicon wafer of high-power semiconductor device Download PDFInfo
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- CN104617070A CN104617070A CN201410821016.9A CN201410821016A CN104617070A CN 104617070 A CN104617070 A CN 104617070A CN 201410821016 A CN201410821016 A CN 201410821016A CN 104617070 A CN104617070 A CN 104617070A
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Abstract
The invention provides a soldering method of an electrode and a silicon wafer of a high-power semiconductor device. According to the soldering method, the solder is arranged between a cooling plate and the semiconductor silicon wafer and between the electrode and the semiconductor silicon wafer and the solder is molten to achieve the soldering combination after a device is heated. The invention also provides the lead-free solder, wherein the solder comprises, by weight, not more than 3% of silver, not more than 0.2% of titanium, not more than 0.2% of nickel and the balance tin. The lead-free solder is high in reliability during electronic component soldering.
Description
Technical field
The present invention relates to technical field of welding materials, particularly relate to a kind of electrode of large power semiconductor device and the welding method of silicon chip.
Background technology
In the manufacture of large power semiconductor device, the thermal coefficient of expansion of different materials is different, and therefore welds joint can produce different thermal strains.Due to the thermal strain of welding region and the heat that can produce when semi-conducting material welds.Make that the position of semiconductor element offsets sometimes, solder covers not congruent problem.And these unfavorable conditions are urgently to be resolved hurrily.
Lead is a kind of harmful noxious substance, and in electronics manufacturing, a large amount of leypewter (Sn/Pb) solder used creates serious lead contamination to soil and air ambient.Therefore, realizing electronics manufacturing greenization is imperative behave.Solder compositions in recent years on market is also progressively transformed into from tin/kupper solder based on tin/silver, tin/zinc, tin/bismuth, then adds the solder of other metallic elements.But lead-free solder is adding easily brittle damage in man-hour.
Therefore the lead-free solder how obtaining high solder bond intensity and high reliability is also the technical issues that need to address.
Summary of the invention
Technical problem to be solved by this invention is to overcome deficiency of the prior art and provides electrode and the silicon chip welding method of a kind of high reliability, large power semiconductor device that solder bond intensity is high.Innovative point is to provide a kind of lead-free solder containing tin (Sn) base alloy, described kamash alloy contains the silver (Ag) being no more than 3 % by weight, is no more than the titanium (Ti) of 0.2 % by weight and is no more than the nickel (Ni) of 0.2 % by weight.
Semiconductor device silicon chip proposed by the invention and electrode welding device comprise: electrode, the semi-conductor silicon chip with conductive pattern, heating panel.Its structure from bottom to top, is heating panel, solder respectively, partly leads
Body silicon chip, solder, electrode.Heating panel selects thermal conductivity high and low-cost copper coin is made.
Lead-free solder proposed by the invention, composition is as follows: the silver (Ag) containing 1 % by weight to 3 % by weight, the titanium (Ti) of 0.01 % by weight to 0.2 % by weight, the nickel (Ni) of 0.01 % by weight to 0.2 % by weight and the tin (Sn) of surplus and inevitable impurity element.
This lead-free solder can make soldering paste, welding rod, welding, welding wire.
Heating panel can be connected with semi-conductor silicon chip with semi-conductor silicon chip, electrode by this solder.
By above-mentioned ready comprise semi-conductor silicon chip, solder, electrode, insulating barrier, solder, heating panel welder put into firing equipment, make described solder be heated to the melting temperature being equal to or higher than described solder, carry out solder bond, then be cooled to room temperature.
After completing welding, electrode, semi-conductor silicon chip, heating panel are electrically connected joint.
As mentioned above, the electrode of large power semiconductor device of the present invention and the welding method of silicon chip, be arranged on solder between electrode and semi-conductor silicon chip, between semi-conductor silicon chip and heating panel simultaneously, can improve welding efficiency and reliability.In addition, solder of the present invention can be applied to the welding of multiple electronic device, because this solder is lead-free solder, both can not cause environmental pollution, and can provide good welding effect again.
Accompanying drawing explanation
Fig. 1 is the electrode in semiconductor device of the embodiment of the present invention and the sectional structure chart of silicon chip welder.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
In electric furnace, melt raw material tin (Sn), silver (Ag), titanium (Ti), nickel (Ni) prepare solder.Wherein, material purity used is all more than or equal to 99.99%, and material composition is as follows: the silver (Ag) of 1 % by weight to 3 % by weight, the titanium (Ti) of 0.01 % by weight to 0.2 % by weight, the nickel (Ni) of 0.01 % by weight to 0.2 % by weight and the tin (Sn) of surplus and inevitable impurity element.
Following description uses the large power semiconductor device electrode of above-mentioned solder and the welding method of silicon chip.Fig. 1 represents the electrode in semiconductor device of execution mode and the sectional structure chart of silicon chip welder.See device in Fig. 1, figure from bottom to top, be heating panel 11, solder 12, semi-conductor silicon chip 13, solder 14, electrode 15 respectively; Semi-conductor silicon chip 13 has conductive pattern, semi-conductor silicon chip 13 can be connected with electrode 15 by solder.Be attached with above-mentioned solder between semi-conductor silicon chip and heating panel and engage.Electrode 15 and heating panel 11 select thermal conductivity high and low-cost copper coin is made.
Above-mentioned electrode, solder, semi-conductor silicon chip, solder, heating panel are put into firing equipment and carried out solder fusing welding.Make described solder be heated to the melting temperature being equal to or higher than described solder, carry out solder bond, then be cooled to room temperature.After completing welding, electrode, semi-conductor silicon chip, heating panel are electrically connected joint.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a lead-free solder, it is characterized in that, composition is as follows: the silver (Ag) containing 1 % by weight to 3 % by weight, the titanium (Ti) of 0.01 % by weight to 0.2 % by weight, the nickel (Ni) of 0.01 % by weight to 0.2 % by weight and the tin (Sn) of surplus and inevitable impurity element.
2. the electrode of large power semiconductor device and a welding method for silicon chip, is characterized in that, comprise the steps:
Step 1, lead-free solder is arranged on there is welding device for forming between the silicon chip of conductive pattern and electrode, between insulating barrier and heating panel, this device from bottom to top, is heating panel (11), solder (12), semi-conductor silicon chip (13), solder (14), electrode (15) respectively;
Step 2, puts into firing equipment by this welder putting solder well;
Step 3, heats this welder, makes described solder be heated to the melting temperature being equal to or higher than described solder, carries out solder bond;
Step 4, is cooled to room temperature by described device.
3. a kind of electrode of large power semiconductor device according to claim 2 and the welding method of silicon chip, is characterized in that, the semi-conductor silicon chip of described welder is the semi-conductor silicon chip that Surface Creation has aluminum metal conductive pattern.
4. a kind of electrode of large power semiconductor device according to claim 2 and the welding method of silicon chip, is characterized in that, the heating panel of described welder is copper coin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410821016.9A CN104617070A (en) | 2014-12-24 | 2014-12-24 | Soldering method of electrode and silicon wafer of high-power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410821016.9A CN104617070A (en) | 2014-12-24 | 2014-12-24 | Soldering method of electrode and silicon wafer of high-power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104617070A true CN104617070A (en) | 2015-05-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410821016.9A Pending CN104617070A (en) | 2014-12-24 | 2014-12-24 | Soldering method of electrode and silicon wafer of high-power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104617070A (en) |
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2014
- 2014-12-24 CN CN201410821016.9A patent/CN104617070A/en active Pending
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150513 |