CN104584230A - Laser-based method and machining table for metallising the back of a semiconductor component - Google Patents

Laser-based method and machining table for metallising the back of a semiconductor component Download PDF

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Publication number
CN104584230A
CN104584230A CN201380043573.6A CN201380043573A CN104584230A CN 104584230 A CN104584230 A CN 104584230A CN 201380043573 A CN201380043573 A CN 201380043573A CN 104584230 A CN104584230 A CN 104584230A
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metal foil
semiconductor element
foil film
method step
back side
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CN104584230B (en
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H·豪泽
J·内卡尔达
R·普罗伊
B·布拉西
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention relates to a method for metallising the back of a semiconductor component, which semiconductor component is part of a photovoltaic cell or a preliminary stage in the production process of a photovoltaic cell, comprising the following method steps: A - applying at least one at least single-layer metal film on the back of the semiconductor component; B - locally heating at least the metal film, such that the metal film fuses momentarily in local areas. It is essential that a hollow is formed at least in regions between the metal film and back of the semiconductor component, which hollow is filled with a filling medium, which filling medium has an optical refractive index of less than 1.4. The invention also relates to a photovoltaic cell which is produced using such a method and a machining table for carrying out such a method.

Description

For the method based on laser and the machine table at the metallized semi conductor element back side
The present invention relates to preamble according to claim 1 by the method for the back face metalization of semiconductor element and the machine table performing this method, this semiconductor element is photovoltaic solar cells or the precursor in photovoltaic solar cell manufacture process.
In photovoltaic solar cell, charge carrier is generally seen off through metal structure.Such metal structure is aware of, the side of its conducting semiconductor element by entire surface at this.
In most simple form, semiconductor element is made up of the semiconductor layer with p doped region and n doped region.This semiconductor element can also comprise insulating barrier or other layer, especially semiconductor layer.
In addition, except characteristic electron is as except the composite attribute on surface and semiconductor layer material product amount, the in addition optical efficiency important to solar battery efficiency.Optical efficiency represents all electronics electron hole centering and the ratio of electromagnetic radiation arriving at front that produce because light is incident to solar cell.In order to improve optical efficiency, the light path extended in solar cell is especially also important: because absorbent properties are low, a part for longwave optical penetrates solar cell and arrives at rear surface of solar cell.Therefore being aware of to improve optical efficiency, being formed this back side with specular manner, thus the light arriving at the back side is reflected to front again.
To this it is known that utilize the back face metalization structure of whole to come the coating semiconductor element back side as back reflector.In addition be also aware of and occur parasitic absorption in structurized or coarse metal level.Therefore cause, the metal level of smooth (such as evaporation) have than the higher reflection (such as by silk screen printing manufacture) of more coarse layer.
Another possibility obtaining the inside light path prolongation in solar cell has description in DE 10 2,009 042 018 A1.At this, realize diffractive surface structure at rear surface of solar cell.This causes photon reflected overleaf to be reflected with discrete angle of diffraction.In this way, also can strengthen long-wave radiation by inner light path prolongation to absorb.
Task of the present invention is to provide a kind of by the method for the back face metalization of semiconductor element, and its application improves the internal reflection performance of rear surface of solar cell and allows to obtain as far as possible flat back face metalization structure to reduce parasitic absorption as far as possible simultaneously.Task of the present invention is also to provide a kind of solar cell, and wherein, back face metalization structure improves in reflecting properties and flatness.In addition, the present invention should provide a kind of and perform the machine table of this method for the manufacture of this solar cell.
This task has been come by method according to claim 1, photovoltaic solar cell according to claim 12 and the machine table for performing this method according to claim 13.The Advantageous embodiments of the method is found in claim 2-11.The Advantageous embodiments of the machine table for performing the method is found in claim 14 and 15.Hereby include the statement of claim in specification by clearly quoting.
Method of the present invention is used for semiconductor element back face metalization.This semiconductor element is the precursor of photovoltaic solar cell in photovoltaic solar cell or manufacturing process and comprises at least one semiconductor layer.Now it is within the scope of the invention that, semiconductor layer with Semiconductor substrate and especially Silicon Wafer form is formed.
The method comprises following methods step:
In method step A, the metal foil film of at least one at least individual layer is applied to the back side of semiconductor element.
In method step B, the metal foil film applied in method step A is locally heated.Thus one, in regional area, realize the fusing of at least metal foil film momently.
Importantly, between metal foil film and the semiconductor element back side, be at least partially formed space, this fill gaps has filler, and this filler has the light refractive index n being less than 1.4.Here and hereafter, parameter n describes the real part of refractive index.
The present invention is based on the following understanding of applicant, between metal foil film and the back side of semiconductor element, form the reflection enhancement that space result in the long wave electromagnetic radiation in the wave-length coverage being greater than 1000nm.By the reflection of repeatedly additional light, the light path in semiconductor element increases, and then absorbing probability and solar battery efficiency also improve.
Physically, this is based on the higher refractive index contrast between semiconductor and metal level.This result according to fresnel formula the reduction of critical angle that internal reflection strengthens and occur inner total reflection.The latter is especially important in conjunction with the front of texture structure, because light is with the incident rear surface of solar cell in angle of inclination in the case.If incident angle is overleaf greater than total reflection angle, then almost reflects whole radiation between the transition part between semiconductor and dielectric material or semiconductor and the thinner filler of outward appearance, even must first lossy fashion do not reflected by metal mirror.
In the semiconductor back surface of coarse or texture structure, directly apply metal level by common method (as silk screen printing, sputtering or evaporation) and result in the metal back side be also structured.This is not generally significantly changed by the applying with the dielectric passivation layer being less than 100nm common thickness.As mentioned above, occurred in this application scenario, being regarded as parasitic absorption, this is because it is the absorption that cannot be used to solar cell in nanostructured metal.Describe a kind of method in the present invention, it reduces the loss in the back side of texture structure as far as possible, because this internal reflection is reinforced because there being space on the one hand, on the other hand, there is the planar metal face of the appropriate regulation of this paper tinsel film, thus parasitic metal absorbs and can be weakened as far as possible.
Another application of the invention field combines with the use of the diffraction structure on rear surface of solar cell.In order to form such diffraction structure, such as, on the semiconductor back surface of passivation, realize photo structure.Form diffraction structure itself at rear surface of solar cell to be known and such as in DE 10 2,009 042 018 A1, to have description.Be similar to above-mentioned situation, internal reflection is strengthened in the space here also by realizing being filled with such as air in this structure and metal foil film.Further, the metal foil film being arranged on dorsal part plays optical reflector effect and advantageously can strengthen internal reflection further.
And when metal level or dielectric layer by direct evaporation to structure on rear surface of solar cell time, this metal level is matched with this structure.May occur that very disadvantageous, consistent with this photo structure metal surface is modulated thus.Now, except described parasitic absorption, also occur that beam incident is to metal because of grid effect, this enhance described detrimental effect.This problem is avoided substantially by adopting metal foil film and forming the space rear surface of solar cell that metallizes.
Further positive effect is, when adopting described method, realized such as by the cell structure that amorphous silicon is formed realizing grid refractive index contrast (dielectric buffer layer be made up of oxide such as between photo structure and metal mirror) higher compared with known method.First this cause higher diffraction efficiency, strengthens interior light path thus and extend.And fleeting ripple that occur when adopting photo structure, that can not propagate in dielectric buffer layer by optimized attenuation, can weaken again parasitic absorption in a metal thus in space as far as possible.
Utilize method of the present invention, can so be metallized by rear surface of solar cell, namely between passivation layer and metal foil film, leave enough large space, the reflection enhancement to Incident beams is caused in this space.Passivation layer thickness can be realized thus significantly reduce.Because attempting thick forming passivation layer to realize the backside reflection strengthened by corresponding so far.But thicker passivation layer result in higher processing cost and longer process time.Another advantage of thinner passivation layer is, it is presented as the fainter obstruction to the conducting course of processing: must penetrate this passivation layer conducting to form conducting structure, contacts with the direct of semi-conducting material to set up.This is simpler in passivation layer thickness reduction situation.
Therefore, method of the present invention first time provide low cost, in the thin passivation layer situation of employing by the feasible program of semiconductor element back face metalization, not there is obvious loss in efficiency thus.Compared to known back face metalization method, the solar cell that its passivation layer thickness can be reduced to about 5nm can be produced.
In the scope of this specification, the space occurred at the semiconductor element back side is filled filler.
In a preferred embodiment, as filler, gas is adopted to be preferably air and/or inert gas, especially preferably rare gas.Obtain following advantage thus, the Packed space of this filling is with simple and the mode of low cost has the refractive index n being less than 1.4.
In another preferred embodiment, glue is used as filler.Obtain following advantage thus, space obtains stable and metal foil film is added fixing.Refractive index n now can be adopted to be less than the commercial usual glue of 1.4, such as, from the glue of the MY series of supplier Polytec PT Co., Ltd (Waldbronn), such as MY-132 or MY-133.
Within the scope of the invention, before method step A and/or B, apply other intermediate layer.
In an additional method step A-1 preferably before method step A, at least one intermediate layer is applied on the side of semiconductor element.This intermediate layer preferably dielectric layer.Obtain following advantage thus, intermediate layer can be configured to improve solar battery efficiency, particularly by formed with passivation layer form this intermediate layer using reduce Carrier recombination in semiconductor layer surface and/or by formed as optical layers this intermediate layer with the reflecting properties improving solar cell with so that light absorption.Therefore especially preferred, it is favourable for being formed intermediate layer with dielectric layer, the especially best form with silicon dioxide layer, silicon nitride layer or alumina layer.
Preferably in method step B by laser, especially preferably carry out this metal level of localized heating by pulse laser.The laser of preferred employing wavelength between 190nm to 11 μm in scope, especially preferably adopts wavelength to be the laser of 1064nm.Preferred employing pulse length between psec (ps) to 20 microseconds (μ s) in scope, the laser of especially preferably 10 to 300 nanoseconds (ns).The research of inventor shows, above-mentioned parameter allows the smooth and easy and flow process of not easily makeing mistakes.Adopt laser come localized heating and and then deposite metal paper tinsel film time advantageously, local melting can occur with high accuracy at any each position.
In a preferred embodiment, so carry out the metal foil film fusing in method step B, that is, this space is by the region deviding of metal foil film, the semiconductor element back side and fusing.Thus one, this space is sealed relative to environment.The region of this fusing is formed around this space at least partly.The region of this fusing advantageously extends along the outward flange of semiconductor element at least partly continuously.The connection appeared at because melting this metal foil film between metal foil film and semiconductor element meets the object relative to environmental sealing space between metal foil film and semiconductor element for this reason on the one hand.On the other hand, metal foil film is fixed on semiconductor element being scattered in the multiple regional areas on this semiconductor element back side.
Preferably carry out the electrical conductive communication of semiconductor layer at the position that metal foil film is locally melted, way is that metal foil film is connected with semiconductor layer conduction.This can realize in fusion process according to known mode itself, and especially in fusion process, the one or more intermediate layers between metal foil film and semiconductor layer can be penetrated by metal foil film in a simple manner decoupled.
In another preferred embodiment, in the metal foil film fusion process in method step B, carry out the structuring of metal foil film simultaneously.Structuring occurs being separated between this means the region that the region that to realize melting in metal foil film and metal foil film are not melted.
In another preferred embodiment, also in method step C, in metal foil film, predetermined breakaway poing is at least produced.Predetermined breakaway poing produces in the region of " being arranged in the side away from this space of metal foil film sealing ".Simply metal foil film can be removed thus at the edge of semiconductor element.
Especially advantageously, this metal foil film is completely severed at the melting range place of method step C in laser processing procedure.Thus one, can be implemented in the simple removal of the metal foil film of semiconductor element edge.In method step C, preferably adopt the laser of pulse length within the scope of psec to a few femtosecond.Skiving metal foil film in the region of bearing laser beam thus, in other words, metal is by ablation.At this advantageously, the fusing at the semiconductor element back side is not realized.Therefore, between metal foil film and semiconductor element, connection is not formed.
In another preferred embodiment, be fixed on semiconductor element in the mode of point by localized heating in the method step A-a of metal foil film after method step A.In one before the method step B additional A-b of method step subsequently, initiatively filler is sent between semiconductor element and the metal foil film be fixed.Then, in method step B, fixing on semiconductor element of metal foil film is carried out as described above by localized heating and and then relative to this space of environmental sealing.This sealing causes filler cannot run out of environment from space.Filler in this preferred implementation preferably gas, especially air.Because gas can initiatively be sent into as being blown between semiconductor element and metal foil film in a very simple way.
By filler initiatively being sent into the space between metal foil film and semiconductor element, obtaining following advantage, can gap thickness be controlled.In addition, in the region of " between metal foil film and semiconductor element in sealing ", producing only less contact point by adding enough loadings, preferably not producing contact point.Thus one, backside reflection is extended by the larger area of interstice coverage and strengthens further.
In another preferred embodiment, be fixed on semiconductor element, preferably by localized heating by airtight for metal foil film before initiatively adding filler.Expose at least one in the case to fill mouth and be exactly preferably one and fill mouth, thus aforesaid fixing after can by described at least one fill mouth and filler sent in the space limited by semiconductor element, metal foil film and airtight fixed part.Can realize thus according to the loading of regulation and the stuffing pressure according to regulation.Preferably also this filling mouth hermetic closed subsequently, especially by localized heating.
In another preferred embodiment, be structured in the method step A0 of the back side of this semiconductor element before method step A.Structure on the back side has many concavo-convex, thus forms space because there is this structure at semiconductor surface in indent when laying paper tinsel film.Preferably this structuring utilizes nano-imprint method and/or dry ecthing method and/or wet etch method and/or print process or photoetch method to carry out (" the Diffractive Backside Structrures via Nanoimprint Lithography " of the people such as H.Hauser, 2012, Proceedings of the Sillicon PV Conference).
Especially advantageously, structuring only utilizes nano-imprint method to carry out: the structure by nano impression realization can be used as the precursor of further structured processes (such as etch process or stripping technology) on the one hand, on the other hand, directly active layer is had as the optics in solar cell further.Now, not only can adopt polymeric material, also can adopt sol material or Ormocer material.
The physical dimension of structure can be selected within the scope of 200nm to 10 μm.The physical dimension of preferred employing between 400nm and 2pm.At this especially advantageously, gap thickness can control according to physical dimension.Gap thickness refers to the void size perpendicular to semiconductor element back side plane at this.
Except the hole of structural texture is used as except space, in the execution mode that another is favourable, be at this back side and form connected filler between metal foil film and the semiconductor element back side and be mingled with, its area in side direction is greater than hole to realize the space that large area covers many holes.Therefore this space forms additional packing layer, and it through described multiple hole, preferably extends past this back side at dorsal part horizontal-extending substantially.In the thickness of the packing layer scope preferably between 20nm to 500nm, preferably between 100nm to 300nm.By above-mentioned packing layer, obtain the further improvement of the optical property of rear surface of solar cell in combination with aforesaid diffraction structure.
In another preferred embodiment, in method step A, have employed structurized metal foil film, its at least have towards the side of semiconductor element multiple concavo-convex.Structure on the metal foil film surface towards semiconductor element side causes the appearance in space here when paper tinsel film is abutted in the semiconductor element back side.Like this, by utilizing laser beam melts metal foil film to come relative to this space of environmental sealing, achieving can the inclosure of filler of unrestricted choice.
In another preferred embodiment, the metal foil film with random grain is adopted at method step A.
In another embodiment, in method step A, make use of the metal foil film with periodicity lines, especially there is the lines of the assembly be made up of periodic structure and random structure.
In the above-mentioned execution mode of the inventive method advantageously, the structuring of semiconductor element is not needed.Structuring processing is transferred to in metal foil film another parallel fabrication structurized.This allows the quicker of whole technical process and the flow process that cost is lower.
In another preferred embodiment, in method step A, adopt the metal foil film being coated with dielectric layer.In the case, this dielectric layer be applied to this metal foil film towards on the side of semiconductor element.
Now advantageously, no matter be under the rear surface of solar cell or metal foil film situation of plane, still, especially under structurized rear surface of solar cell or metal foil film situation, a dielectric buffer layer properly specified with regard to quality of materials and thickness can additionally be deposited in advance with positive influences reflecting properties on metallic film.The resilient coating of appropriate regulation like this can also by lower than cost when being deposited on wafer and faster technique be deposited on metal foil film, because " reel-to-reel " technique now can be have employed.As deposition process, such as, consider PVD or dipping process.Dielectric layer is preferably formed with the thickness in 5nm to 500nm scope and preferably in 20nm to 200nm scope.
In another preferred embodiment, this metal foil film is at least fixed on semiconductor element in method step B.The research of inventor shows, metal foil film is preferably flattened on semiconductor element in fusion process, this is because such as in region to be melted because lack the thermo-contact of metal foil film and semiconductor element and the air entrainment appeared between paper tinsel film and semiconductor element result in metal foil film in local heating time evaporate wholly or in part, thus do not formed and connect or only formed not enough connection.
Therefore, metal foil film is preferably tightened on semiconductor element and/or is drawn on it and/or by blow pressure on it in method step B.Especially the suction of metal foil film and/or blowing provide a kind of process technology simply and especially non-contacting, ensure the Contact of metal foil film and semiconductor element in method step B feasible pattern.
Above-mentioned task has also been come by solar cell according to claim 12.
The metal foil film that photovoltaic solar cell of the present invention comprises semiconductor layer, insulating barrier, the contact on solar battery front side, the passivation layer on rear surface of solar cell and is positioned on rear surface of solar cell.Multiple space is formed between metal foil film and passivation layer.These spaces are sealed relative to environment and are filled with filler, and this filler has the refractive index being less than 1.4.The filler be enclosed contributes to the enhancing of the reflection of long wave electromagnetic radiation and allows passivation thickness significantly to reduce thus, as mentioned above.
In a preferred embodiment, the space on the back side of solar cell of the present invention is filled air and/or inert gas especially rare gas.
Solar cell of the present invention advantageously utilizes the enforcement of the inventive method or its preferred implementation to manufacture.
Above-mentioned task has also been come by machine table according to claim 13.Machine table of the present invention is for performing the preferred implementation of above-mentioned the inventive method or preferably the inventive method.
Machine table of the present invention comprise the rest area for semiconductor element, the fixed area for semiconductor element, for the fixed area of metal foil film and at least one inflatable mouth.Importantly, this inflatable mouth is arranged between the fixed area for metal foil film and the rest area for semiconductor element.Inflatable mouth is for this reason preferred to be connected with insufflation channel.Rest area is preferably arranged between two parties.
Machine table of the present invention brings significant advantage in formation back face metalization structure with the reflex time strengthened on the semiconductor element back side.
This semiconductor element is fixed in rest area when using machine table of the present invention.Fixing semiconductor element metal foil film covers.Fixed area for metal foil film surrounds the central rest area being used for semiconductor element, namely at least arrange around this rest area in the vertical view of machine table and so form, namely, metal foil film is fixed on semiconductor element in the edge ring of semiconductor element around semiconductor element, does not have air entrainment.Metal foil film will be caused in semiconductor element edge because lacking in localized heating and the thermo-contact of semiconductor element and evaporated wholly or in part and so there is no to be formed or only formed the sealing of deficiency when implementing the inventive method around the presumable air entrainment of semiconductor element.The space occurred and the filler be mixed in wherein are not adequately sealed in the case.This is avoided by the fixed area surrounding this rest area.
In another preferred embodiment, the rest area for semiconductor element is formed with concave form, thus this semiconductor element and side is adjacent with it machine table surface form a plane when semiconductor element is placed in concave surface.Ensure that the metal foil film be fixed forms a plane thus, thus avoiding the giving away secrets property caused by presumable metal foil film heaving of the sea when being connected with semiconductor element by metal foil film.
In a preferred embodiment, the fixed area for semiconductor element is formed with the form of at least one SS, and this SS is connected with the first aspiration.By the first aspiration and SS, this semiconductor element can bear vacuum/negative pressure and therefore be fixed in rest area.
In another preferred embodiment, the fixed area for metal foil film is formed with the suction socket form of surrounding the rest area being used for semiconductor element.Suction socket is connected with the second aspiration.By the second aspiration and suction socket, this metal foil film can bear vacuum/negative pressure and be fixed on whereby on semiconductor element.
Because inflatable mouth is arranged between the fixed area for metal foil film and the rest area for semiconductor element, therefore can after local melting, input filler as above through inflatable mouth and be preferably gas, thus propel the price of metal foil film with gas, thus metal foil film in non-melting range at least partly and semiconductor element spaced apart.Thereby simplify the removal of unnecessary metal foil film.
Machine table of the present invention is particularly useful for the embodiment implementing the inventive method as described below:
Machine table comprises the rest area for semiconductor element.In the first method step, semiconductor element is attached in machine table by suction by fixed area and aspiration.
Be applied to by metal foil film on semiconductor element, this metal foil film is fixed on semiconductor element by the SS in fixed area and aspiration.
In another method step, metal foil film is locally fixed on semiconductor element by preferably utilizing the localized heating of laser beam.By the localized heating by laser beam, metal foil film melts at illuminated position and form the fluid-tight connection of local together with the semiconductor element of below, is preferably formed as conductive contact.
In another method step, by insufflation channel through inflatable mouth by filler as above and preferably gas be fed through between " metal foil film that local is fixing " and " semiconductor element ".Thus, metal foil film is lifted away from the back side of semiconductor element and occurs being mingled with.
In another method step, metal foil film to be connected with the semiconductor element back side around ground in semiconductor element edge ring by laser beam and to be sealed relative to environment.Thus one, the filler sent into is entered in the space between metal foil film and the semiconductor element back side by binder.
Preferably in another method step, this metal foil film is utilizing laser beam cut-off along the edge of semiconductor element.This disjunction is carried out along the connecting line at metal foil film and the semiconductor element back side in the metal foil film side away from space.The paper tinsel film exceeded can be simply removed thus.
In an alternative preferred implementation, in the process that the metal foil film at semiconductor element edge is melted (namely in the process of space relative to environmental sealing), carry out the structuring of this metal foil film simultaneously.Here, structuring means the separation occurred between " region of fusing occurs at metal foil film " and " in the unfused region of metal foil film ".Thus, in metal foil film, at least produce predetermined breakaway poing and preferably cut off.Described structuring produces in following region: described region is positioned at the side away from space of metal foil film sealing.Allow thus simply to remove metal foil film at the edge of semiconductor element.
Method of the present invention is preferably designed to form solar cell of the present invention or its preferred implementation and/or implement by machine table of the present invention or its preferred implementation.The preferred implementation of solar cell of the present invention or solar cell of the present invention preferably by the inventive method or its preferred implementation execution and/or manufacture by machine table of the present invention or its preferred implementation.
Below in conjunction with embodiment and accompanying drawing, other favorable characteristics of the present invention and execution mode are described, wherein:
Fig. 1 a-Fig. 1 h shows the method step of first embodiment of the inventive method;
Fig. 2 a-Fig. 2 d shows the method step of second embodiment of the inventive method;
Fig. 3 a-Fig. 3 c shows the method step of the 3rd embodiment of the inventive method;
Fig. 4 a-Fig. 4 g is the schematic diagram of the application of the embodiment of machine table of the present invention.
Fig. 1-3 is schematic diagrames of semiconductor element, and it is the precursor of photovoltaic solar cell or this solar cell in the fabrication process.In the case, local is diagrammatically illustrated respectively.Solar cell similarly continues in both sides respectively.Identical Reference numeral in accompanying drawing represents identical or acts on identical parts.
Fig. 1 a-1h diagrammatically illustrates first embodiment of the inventive method.
Fig. 1 a shows semiconductor element 1, and it comprises the semiconductor layer 2 and contact 3 with p doped region 2a and n doped region 2b.This n doped region 2b is coated with insulating barrier 4.Therefore, Fig. 1 a shows the initial condition of semiconductor element.
Fig. 1 b shows at the schematic diagram performing the semiconductor element after method step A0.By wet chemical etching method, the back side 5 of semiconductor element is roughened.
This roughening can carry out as etching solution by using the mixture be made up of HF (hydrofluoric acid) and hydrogen peroxide.Or structuring can be carried out as follows: just as being used to produce texture structure in the front of solar cell from prior art.Especially, known method can be adopted to produce pyramid structure, especially about 5 μm of high pyramids.Such as such texture structure can be formed by HF-HNO3 solution.The solution containing the KOH of the 2% and IPA of 4% can also be adopted.Also can expect known " standard damnification etching " to be formed coarse, especially utilizing the KOH solution of 10-20%.
By on purpose being formed recessed at the semiconductor element back side, there is the back side lines of physical dimension between 20nm to 10 μm.
Ensure that thus in method step subsequently apply metal foil film time between the back side 5 and metal foil film 7 of semiconductor element, there is space.
In Figure 1b, the semiconductor element back side 5 be roughened with wet chemistry method applies passivation layer 6.Passivation layer 6 has passivation with regard to the abutment surface of semiconductor layer 2, thus reduces carrier recombination velocity in this surface, and then reduces recombination loss.
As illustrated in figure 1 c, in method step A, metal foil film 7 is applied on the rear surface of solar cell 5 of passivation.Between metal foil film 7 and rear surface of solar cell 5, there is multiple space 8 in local.These spaces 8 are filled with the air as filler, therefore have and are not only different from passivation layer, nor are same as the refractive index of metal foil film.Especially, obviously contribution is had to meeting the optical reflection desirably improved overleaf being filled with the refractive index difference between the space of air and passivation layer.Also other gas or glue can be used as filler.
In method step B as shown in Figure 1 d, utilize laser 9 local melting metal foil film region.Thus, metal foil film is fixed on rear surface of solar cell in local.The molten mixture be made up of metal foil film 7, passivation 6 and semiconductor layer 2 is there is in heat affected zone 10.After molten mixture solidifies, there is the electric contact 10 with the semiconductor layer 2 of below.Except fixing metal paper tinsel film on the solar cell, occurred local conducting structure, metal foil film 7 is connected with semiconductor layer 2 is liquid-tight by this local conducting structure.
Fig. 1 e shows the connection at metal foil film 7 and the semiconductor element back side 5.The region deviding of melting be filled with air space 8 and relative to this space 8 of environmental sealing.Now, the region of melting extends along the edge of semiconductor element.Therefore air is enclosed in metal foil film 7 and the space 8 between the semiconductor element back side 5 of passivation relative to environment.Therefore, Fig. 1 d shows performing the state after method step B.
In the last method step C shown by Fig. 1 f, metal foil film 7 utilizes laser beam 9 broken at the edge of semiconductor element 11.By this metal foil film of local melting, metal foil film 7 is cut off by laser beam 9 at this.Fig. 1 f therefore illustrates performing the state after method step C.
Fig. 1 g shows the solar cell after performing the inventive method.The metal foil film 7 that photovoltaic solar cell of the present invention comprises semiconductor layer 2, insulating barrier 4, contact 3a, the 3b on solar battery front side, the passivation layer 6 on rear surface of solar cell 5 and is applied on rear surface of solar cell.Multiple space 8 being filled with air is enclosed between metal foil film 7 and passivation layer 6.The reflection that the air enclosed contributes to improving long wave electromagnetic radiation also allows significantly to reduce passivation layer thickness thus.
Fig. 2 a shows semiconductor element 1 identically with Fig. 1 a.In order to avoid repeating, below by only introduce the inventive method some embodiments between difference.
In fig. 2 a, semiconductor layer 2 is also equipped with passivation layer 6 in the flat back 5 of solar cell.An additional structured layer 12 is applied to passivation layer 6.Structured layer 12 can be structured subsequently.In an illustrated embodiment, structured layer 12 is amorphous silicon layers.
In nano-imprint method, carry out structuring layer by imprint head, this layer can directly be used as optics subsequently active layer, or its pattern can be used as the masterplate (as the etching and processing in amorphous silicon layer 12) for structuring processing subsequently.Described by such method such as has at " the Diffractive Backside Structrures via Nanoimprint Lithography " of the people such as H.Hauser (2012, Procceedings of the Silicon PV Conference).Here, physical dimension can between 200nm and 10 μm, preferably select in scope between 400nm to 2 μm.Semiconductor element 1 state after Fig. 2 b shows and perform nano-imprint method in method step A0.
After performing structure, metal foil film 7 is applied on the back side of semiconductor element.Now, due to the structuring completed before this, between metal foil film and the nanostructure at the semiconductor element back side, there is the space comprising air entrainment 13, as shown in Figure 2 d.
Be similar to Fig. 1 d-1f, metal foil film 7 is locally fixed at the semiconductor element back side.In another method step, metal foil film to be tightly connected around ground and semiconductor element along semiconductor element edge ring and to open edge is broken in last method step.Occur thus as shown in Figure 2 d, overleaf envelope have the embodiment of the solar cell of the present invention 23 of air gap 13.
Fig. 3 a shows the semiconductor element being similar to Fig. 1 a.The back side 5 of semiconductor element is coated with smooth passivation layer 6.
Be different from the above embodiments, in the present embodiment, nanostructured metal paper tinsel film 22 be applied in semiconductor element in the flat rear surface 6 of passivation.This step as shown in Figure 3 b.Due to the structuring of metal foil film, also there is air entrainment 13 at this at metal foil film 22 with between the back side 5 of semiconductor element 1, and then result in the reflection of the enhancing at rear surface of solar cell.
Similar to Fig. 1 d-1f, structurized metal foil film 22 is connected with the semiconductor element back side in local.These edges along semiconductor element around ground by laser be connected and sealed relative to environment.Metal foil film is opened these edges are broken in last method step.
Fig. 3 c shows the solar cell 23 after the embodiment performing the inventive method.Solar cell is coated with structurized metal foil film 22 at dorsal part, there is air entrainment 13 between rear surface of solar cell 5 and metal foil film 22 here.
Fig. 4 a shows the schematic diagram of an embodiment of machine table of the present invention.
Machine table 14 comprise the central rest area 15 for semiconductor element 1, the fixed area 16 for semiconductor element, for the fixed area 17 of metal foil film 7 and inflatable mouth 18.Fixed area 16 and 17 is the SS be connected with aspiration 19 in the present embodiment.Inflatable mouth 18 is connected with insufflation channel 20 and is arranged in between the fixed area 17 of metal foil film and rest area 15.
As shown in Fig. 4 b-4g, implement the embodiment of the inventive method when adopting the embodiment of machine table of the present invention situation will be described below.
The semiconductor element 1 that Fig. 4 b shows machine table 14 and inserts.Semiconductor element 1 is sucked positioned against in machine table by fixed area 16 and aspiration 19.Metal foil film 7 is applied on semiconductor element 1, and metal foil film is fixed on semiconductor element 1 by the SS of fixed area 17.
Fig. 4 c shows method step B.Here, metal foil film 7 is fixed on semiconductor element 1 in local.By by laser beam 21 localized heating, the illuminated position fusing of metal foil film 7 and forms locally contact 10 with the semiconductor element of below.
In another method step, air is blown between the fixing metal foil film 7 in local and semiconductor element 1 through inflatable mouth 18 by insufflation channel 20.This as shown in figure 4d.Metal foil film 7 is made to be lifted away from the back side 5 of semiconductor element 1 and to have occurred space 8 thus.
Fig. 4 e shows being tightly connected of metal foil film 7 and semiconductor element 1.By laser beam 21, metal foil film 7 is connected with the back side 5 of semiconductor element around ground in the edge ring of semiconductor element.Thus, in the space 8 between the back side 5 that the air 8 be blown into is mixed in metal foil film 7 and semiconductor element.
In another method step, metal foil film 7 is cut off by laser beam 21 along semiconductor element 1 at edge.The paper tinsel film 7 exceeded can be simply removed thus.
Fig. 4 g shows the semiconductor element 1 of finished product, and it comprises the air gap 13 between the back side 5 being mixed in metal foil film 7 and semiconductor element.That is, Fig. 4 g shows the state after the embodiment performing the inventive method.
Rest area 15 is formed in inner concavity as follows: when semiconductor element 1 is placed in indent, and semiconductor element 1 and machine table 14 surface adjacent with semiconductor element side constitute a plane.Ensure that thus to be posted in semiconductor element edge ring by the metal foil film 7 that holds and lean against on semiconductor element 1, there is no undesirable air entrainment.Possible undesirable air entrainment this cause when performing the inventive method metal foil film 7 because of in localized heating not with the thermo-contact of semiconductor element 1 and being evaporated wholly or in part, thus do not form or only define the not enough sealing along semiconductor element edge.In the case, the sealing of air entrainment cannot possibly be ensured again.Due to as follows in inner concavity form semiconductor element rest area 15: when semiconductor element 1 is placed in indent this semiconductor element 1 and with it flank abutment machine table 14 surface formation a plane, therefore following advantage is obtained, between metal foil film 7 and semiconductor element 1, occur that the probability of air entrainment reduces along edge ring around semiconductor element, which thereby enhance the quality of the sealing of air entrainment 13.
When the semiconductor element 1 with flat rear surface 5 being connected with metal foil film 7 in the methods of the invention, adopt the application especially favourable according to the machine table of the present invention of embodiment as shown in figs 4 a-4g.In the case, can when adopting machine table of the present invention by making the back side 5 active spaced apart of metal foil film 7 and semiconductor element be entered by blow air between the back side 5 of metal foil film 7 and semiconductor element in local.Ensure that thus, between metal foil film 7 and semiconductor element 1 along semiconductor element edge ring to be tightly connected around ground and meanwhile air is blown between metal foil film and the back side of semiconductor element, air entrainment 13 appears between metal foil film and the semiconductor element back side.

Claims (15)

1. the metallized method of the back side by semiconductor element (1) (5), this semiconductor element (1) is a part for photovoltaic solar cell or the precursor in the manufacturing process of photovoltaic solar cell, and the method comprises following methods step:
A, the metal foil film (7) of at least one at least individual layer is applied to the back side (5) of this semiconductor element (1);
B, as follows localized heating be this metal foil film (7) at least, namely realizes the fusing of this metal foil film (7) in short time at regional area,
It is characterized in that, at least space (8) is being partially formed between this metal foil film (7) and the back side (5) of this semiconductor element (1), this space (8) is filled with filler, and this filler has the light refractive index n being less than 1.4.
2. method according to claim 1, is characterized in that, adopts gas as filler, preferably air or inert gas, especially preferably rare gas; Or adopt glue as filler.
3. according to the method for one of aforementioned claim, it is characterized in that, in method step B, this space (8) is defined by the back side (5) of metal foil film (7), this semiconductor element (1) and the region of fusing, especially region of at least one fusing is around this space (8) around formation, and the region of preferably this fusing preferably extends along all outward flanges along an outward flange of this semiconductor element (1) incessantly.
4. according to the method for one of aforementioned claim, it is characterized in that, in method step B, adopt laser to be used for fusing.
5. according to the method for one of aforementioned claim, it is characterized in that, in method step B, in fusion process, in this metal foil film (7), at least produce predetermined breakaway poing simultaneously.
6. according to the method for one of aforementioned claim, it is characterized in that, in an additional method step C, in this metal foil film (7), at least produce predetermined breakaway poing, preferably this metal foil film (7) is broken at the melting range place of method step C.
7. according to the method for one of aforementioned claim, it is characterized in that, in method step A-a, this metal foil film (7) is fixed on this semiconductor element by localized heating in the mode of point, and in one before method step B additional method step A-b, initiatively by filler and especially gas is preferably air and introduces between this semiconductor element (1) and metal foil film (7).
8. according to the method for one of aforementioned claim, it is characterized in that, be structured in the method step A0 before method step A of the back side (5) of this semiconductor element (1), preferably utilize nano-imprint method and/or dry chemical method and/or wet chemistry method and/or print process and/or photoetch method.
9. according to the method for one of aforementioned claim, it is characterized in that, this space (8) are configured to have the average thickness between 10nm to 1 μm, preferably between 10nm to 100nm.
10. according to the method for one of aforementioned claim, it is characterized in that, in method step A, metal foil film (22) is structurized metal foil film.
11. according to the method for one of aforementioned claim, it is characterized in that, in method step A, metal foil film (7) is dielectric coated foils film, and preferably this dielectric layer is configured to the thickness that has between 5nm to 500nm, preferably between 20nm to 200nm.
12. 1 kinds of photovoltaic solar cells, it comprises at least one semiconductor layer (2), at least one intermediate layer (4) on the side of this semiconductor layer and at least one metal foil film (7), it is characterized in that, this photovoltaic solar cell at least has in local between this metal foil film (7) and the back side (5) of this semiconductor element (1) fills Packed space (8), and this filler has the light refractive index being less than 1.4.
13. 1 kinds of machine table, be particularly useful for performing the method according to one of aforementioned claim 1 to 11, this machine table (14) has the rest area (15) for semiconductor element (1), at least one fixed area (15) for metal foil film and at least one inflatable mouth (18), and this inflatable mouth (18) is connected with insufflation channel (20) and is arranged between this fixed area (15) and this rest area (15).
14. machine table according to claim 13, is characterized in that, this fixed area (15) about this rest area (15) around and preferably form in suction socket form, this suction socket is connected with suction channel (19).
15. according to the machine table of claim 13 or 14, it is characterized in that, this rest area (15) is formed in inner concavity as follows, namely, when semiconductor element (1) is placed in this indent, the surface adjacent with this semiconductor element side of this semiconductor element (1) and this machine table (14) forms a plane.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475706A (en) * 2016-03-10 2018-08-31 株式会社钟化 Solar cell module
CN109417102A (en) * 2016-06-19 2019-03-01 弗劳恩霍夫应用研究促进协会 For connecting the method with aluminium film as the solar battery of back contact
CN109463009A (en) * 2016-06-19 2019-03-12 弗劳恩霍夫应用研究促进协会 Method for connecting solar battery

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016115355A1 (en) * 2016-08-18 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. A method of adhering a metallic foil to a surface of a semiconductor substrate and a semiconductor device with a metallic foil

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418984A1 (en) * 1989-09-21 1991-03-27 Interuniversitair Microelektronica Centrum Vzw A semiconducting photo element and a method of manufacturing same
CN101681869A (en) * 2007-06-21 2010-03-24 Asml荷兰有限公司 Method of loading a substrate on a substrate table, device manufacturing method, computer program, data carrier and apparatus
CN101681937A (en) * 2007-05-04 2010-03-24 法国圣戈班玻璃厂 Transparent substrate with advanced electrode layer
CN101807616A (en) * 2010-02-24 2010-08-18 中国科学院半导体研究所 Back-light black-surface silicon solar battery structure and production method thereof
CN101820004A (en) * 2010-04-28 2010-09-01 中国科学院半导体研究所 Photo-electro separated solar cell back reflector
CN101884116A (en) * 2008-04-17 2010-11-10 Lg电子株式会社 Solar cell and method of manufacturing the same
DE102009042018A1 (en) * 2009-09-21 2011-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. solar cell
WO2011155639A1 (en) * 2010-06-11 2011-12-15 昭和シェル石油株式会社 Thin-film solar battery
DE102011112696A1 (en) * 2011-08-31 2013-02-28 Martin-Luther-Universität Halle-Wittenberg Film for back contact of solar cell utilized for power production, has conductive diffractive optical structure comprising photonic crystal, where structure is arranged on flexible conductive substrate, which comprises metallization part

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060275547A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Vapor Phase Deposition System and Method
CN101203384B (en) * 2006-06-27 2012-02-01 三菱电机株式会社 Silk-screen printing machine and solar battery
DE102006044936B4 (en) * 2006-09-22 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for the metallization of solar cells and its use
DE102008012286A1 (en) * 2008-03-03 2009-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solar module i.e. photovoltaic component, for directly generating electrical current from sunlight, has plastic carrier providing metallic electrical connecting structure for electrical connection to solar cell arrangement
DE102009061071B3 (en) * 2009-02-27 2013-01-17 Solarworld Innovations Gmbh Method for producing semiconductor component used for laser-fired contact solar cell module, involves producing electrically conductive contact between contact layer made of easily solderable metal, and semiconductor substrate

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418984A1 (en) * 1989-09-21 1991-03-27 Interuniversitair Microelektronica Centrum Vzw A semiconducting photo element and a method of manufacturing same
CN101681937A (en) * 2007-05-04 2010-03-24 法国圣戈班玻璃厂 Transparent substrate with advanced electrode layer
CN101681869A (en) * 2007-06-21 2010-03-24 Asml荷兰有限公司 Method of loading a substrate on a substrate table, device manufacturing method, computer program, data carrier and apparatus
CN101884116A (en) * 2008-04-17 2010-11-10 Lg电子株式会社 Solar cell and method of manufacturing the same
DE102009042018A1 (en) * 2009-09-21 2011-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. solar cell
CN101807616A (en) * 2010-02-24 2010-08-18 中国科学院半导体研究所 Back-light black-surface silicon solar battery structure and production method thereof
CN101820004A (en) * 2010-04-28 2010-09-01 中国科学院半导体研究所 Photo-electro separated solar cell back reflector
WO2011155639A1 (en) * 2010-06-11 2011-12-15 昭和シェル石油株式会社 Thin-film solar battery
DE102011112696A1 (en) * 2011-08-31 2013-02-28 Martin-Luther-Universität Halle-Wittenberg Film for back contact of solar cell utilized for power production, has conductive diffractive optical structure comprising photonic crystal, where structure is arranged on flexible conductive substrate, which comprises metallization part

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475706A (en) * 2016-03-10 2018-08-31 株式会社钟化 Solar cell module
CN108475706B (en) * 2016-03-10 2021-11-02 株式会社钟化 Solar cell module
CN109417102A (en) * 2016-06-19 2019-03-01 弗劳恩霍夫应用研究促进协会 For connecting the method with aluminium film as the solar battery of back contact
CN109463009A (en) * 2016-06-19 2019-03-12 弗劳恩霍夫应用研究促进协会 Method for connecting solar battery

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