CN104577687A - All-solid-state laser device of 1030 nm - Google Patents
All-solid-state laser device of 1030 nm Download PDFInfo
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- CN104577687A CN104577687A CN201510003278.9A CN201510003278A CN104577687A CN 104577687 A CN104577687 A CN 104577687A CN 201510003278 A CN201510003278 A CN 201510003278A CN 104577687 A CN104577687 A CN 104577687A
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Abstract
The invention discloses an all-solid-state laser device of 1030 nm. The laser device comprises a sub-nanosecond local oscillator stage on the basis of a microchip structure, an amplifier stage on the basis of a plane waveguide structure and a beam coupling system. The all-solid-state laser device has the advantages of being simple and compact in structure, stable, reliable, good in heat dissipation, capable of obtaining high-power output, good in beam quality and the like. The wavelength of lasers is 1030 nm, the repetition frequency is larger than 1 KHZ, the pulse width reaches hundreds of picoseconds, the single-pulse energy is larger than 1 mJ, and the peak power can reach above 1 MW. The all-solid-state laser device is suitable for high-precision laser distance measuring and laser radar application.
Description
Technical field
The present invention relates to all solid laser, particularly a kind of 1030nm all solid state laser.
Background technology
In the field such as laser ranging and laser radar, the responsiveness of people to photodetector is had higher requirement.And 1030nm wavelength is about 2 ~ 3 times of 1064nm responsiveness to the responsiveness of silicon-based detector, it is made to have a wide range of applications in the field such as laser ranging and laser radar.
Existing high power 1030nm all solid state laser, the laser diode-pumped microchip laser crystal of main employing carries out many journeys, multi-stage cascade amplifies.But it has the shortcomings such as complex structure, stability is poor, beam quality is not high.
Summary of the invention
The present invention, in order to overcome the deficiency of above-mentioned prior art, provides a kind of 1030nm all solid state laser, and this laser adopts based on microplate+planar waveguiding structure, simple and compact for structure, reliable and stable, heat radiation is good, can obtain the features such as high-power output and good beam quality.Optical maser wavelength is 1030nm, repetition rate > 1KHZ, pulsewidth hundreds of psec, single pulse energy > 1mJ, and peak power can reach more than 1MW, is suitable for high-precision laser range-finding and laser radar application.
Technical solution of the present invention is as follows:
A kind of 1030nm all solid state laser, feature is that its structure comprises the subnanosecond local oscillator level based on micro sheet structure, based on amplifying stage and the light beam coupling system of planar waveguiding structure, the described subnanosecond local oscillator level based on micro sheet structure comprises centre wavelength 940nm laser diode, the focusing coupled system be relatively made up of the convex surface of two planoconvex spotlights, Yb:YAG microchip laser crystal, the Cr that band tail optical fiber exports successively
4+: YAG adjusting Q crystal and flat output mirror; Described light beam coupling system comprises 1030nm45 ° of plane total reflective mirror, collimating lens, 1030nm45 ° plane total reflective mirror and cylindrical focusing lens successively; The described amplifying stage based on planar waveguiding structure comprises diode laser matrix, pump coupling mirror, the first plano-concave cylindrical mirror, Yb:YAG slab guide and the second plano-concave cylindrical mirror successively; Being compressed it at quick shaft direction by described cylindrical focusing lens after pulse laser that local oscillator level exports by described collimating lens collimation is coupled in described Yb:YAG slab guide, described plano-concave cylindrical mirror and plano-concave cylindrical mirror come and go the difference of number of times in waveguide according to flashlight, mutual angle is 1 ° ~ 2 °, and the pump light that described diode laser matrix exports carries out pumping amplification from the side of described Yb:YAG slab guide to laser.
The doping content of described Yb:YAG microchip laser crystal is 8at% ~ 12at%, and thickness is 1 ~ 2mm, and its one side is coated with 940nm anti-reflection, the high anti-deielectric-coating of 1030nm, and another side is coated with 1030nm anti-reflection deielectric-coating.
Described Cr
4+: YAG adjusting Q crystal is 60% ~ 80% to the initial transmission of 1030nm laser.
Described flat output mirror is coated with that 940nm is high anti-, 1030nm transmitance is the deielectric-coating of 50% ~ 70%.
The planoconvex spotlight of described focusing coupled system is coated with 940nm anti-reflection deielectric-coating.
Described collimating lens, cylindrical focusing lens are coated with 1030nm anti-reflection deielectric-coating.
The first described plano-concave cylindrical mirror and the second plano-concave cylindrical mirror are coated with 1030nm anti-reflection deielectric-coating.
Described Yb:YAG slab guide is 2at% ~ 5at% by doping content, is of a size of the upper and lower bonding of sapphire crystal that the Yb:YAG crystal of 13mm × 6mm × 150um and two unadulterated sizes be 13mm × 6mm × 1mm and forms.
Coupling pump light is entered in Yb:YAG slab guide by proximity direct-coupling or pump coupling lens by described diode laser matrix.
Described diode laser matrix luminescence center wavelength is 940nm or 976nm.
Technique effect of the present invention:
The centre wavelength 940nm laser diode end-face pump Yb:YAG microchip laser crystal that the present invention adopts band tail optical fiber to export, with Cr
4+: the passive Q-adjusted subnanosecond narrow spaces 1030nm flashlight that can obtain Gao Zhongying rate of YAG crystal.Its repetition rate > 1KHZ, pulsewidth hundreds of psec, beam quality M
2< 1.2.By light beam coupling system, the flashlight that local oscillator level exports is coupled in Yb:YAG slab guide, can 1cm be obtained
-1~ 2cm
-1small signal gain.At waveguide two ends by plano-concave cylindrical mirror, laser is is repeatedly come and gone in waveguide and amplifies, after amplifying for 3 ~ 5 times, its single pulse energy can be amplified to more than 1mJ.
Whole system does not need multi-stage cascade and complicated structure based on the structure of microplate+slab guide, simple and compact for structure, reliable and stable.Can obtain the stable output of Gao Zhongying subnanosecond 1030nm pulse laser of more than 1MW, output beam has good polarization characteristic and beam quality.
Laser structure involved in the present invention is simply compact, reliable and stable, and wavelength is 1030nm, repetition rate > 1KHZ, pulsewidth hundreds of psec, and peak power can reach more than 1MW, is suitable for high-precision laser range-finding and laser radar application.
Accompanying drawing explanation
Fig. 1 is the structure schematic top plan view of 1030nm all solid state laser of the present invention.
Fig. 2 is the front view of the structural representation of 1030nm all solid state laser of the present invention.
Fig. 3 is the profile pump coupled structure schematic diagram 1 between the diode laser matrix of 1030nm all solid state laser of the present invention and slab guide, proximity direct-coupling.
Fig. 4 is the profile pump coupled structure schematic diagram 2 between the diode laser matrix of 1030nm all solid state laser of the present invention and slab guide, pump coupling Lens Coupling.
Fig. 5 is the structural representation of the slab guide of 1030nm all solid state laser of the present invention.
Embodiment
First refer to the structure schematic top plan view that Fig. 1,2, Fig. 1 is 1030nm all solid state laser embodiment 1 of the present invention.Fig. 2 is the front view of the structural representation of 1030nm all solid state laser embodiment 1 of the present invention.As seen from the figure, 1030nm all solid state laser of the present invention, comprise the subnanosecond local oscillator level based on micro sheet structure, the amplifying stage based on planar waveguiding structure and light beam coupling system, the described subnanosecond local oscillator level based on micro sheet structure comprise successively band tail optical fiber export centre wavelength 940nm laser diode 1, by the planoconvex spotlight 2 focusing coupled system, Yb:YAG microchip laser crystal 4, the Cr that form relative to the convex surface of planoconvex spotlight 3
4+: YAG adjusting Q crystal 5 and flat output mirror 6; Described light beam coupling system comprises 1030nm45 ° of plane total reflective mirror 7, collimating lens 8,1030nm45 ° plane total reflective mirror 9 and cylindrical focusing lens 10 successively; The described amplifying stage based on planar waveguiding structure comprises diode laser matrix 14, pump coupling mirror 15, first plano-concave cylindrical mirror 13, Yb:YAG slab guide 12 and the second plano-concave cylindrical mirror 11 successively; Being compressed it at quick shaft direction by described cylindrical focusing lens 10 after pulse laser that local oscillator level exports by described collimating lens 8 collimation is coupled in described Yb:YAG slab guide 12, described plano-concave cylindrical mirror 11 and plano-concave cylindrical mirror 13 come and go the difference of number of times in waveguide according to flashlight, mutual angle is 1 ° ~ 2 °, and the pump light that described diode laser matrix 14 exports carries out pumping amplification from the side of described Yb:YAG slab guide 12 to laser through described pump coupling mirror 15.
The doping content of described Yb:YAG microchip laser crystal 4 is 8at% ~ 12at%, and thickness is 1 ~ 2mm, and its one side is coated with 940nm anti-reflection, the high anti-deielectric-coating of 1030nm, and another side is coated with 1030nm anti-reflection deielectric-coating.
Described Cr
4+: the initial transmission of YAG adjusting Q crystal 5 pairs of 1030nm laser is 60% ~ 80%.
Described flat output mirror 6 is coated with that 940nm is high anti-, 1030nm transmitance is the deielectric-coating of 50% ~ 70%.
Planoconvex spotlight 2 and the planoconvex spotlight (3) of described focusing coupled system are coated with 940nm anti-reflection deielectric-coating, and focal distance ratio is 1:1.
Described collimating lens 8, cylindrical focusing lens 10 are coated with 1030nm anti-reflection deielectric-coating.
The first described plano-concave cylindrical mirror 13 and the second plano-concave cylindrical mirror 11 are coated with 1030nm anti-reflection deielectric-coating.
Coupling pump light enters in Yb:YAG slab guide 12 through pump coupling lens 15 by described diode laser matrix 14.
Described diode laser matrix 14 luminescence center wavelength is 940nm or 976nm.
The core diameter of the centre wavelength 940nm laser diode 1 with tail optical fiber output is 105um, and numerical aperture is 0.22.The pump light sent with the centre wavelength 940nm laser diode (1) of tail optical fiber output focuses in Yb:YAG microchip laser crystal 4 by focusing on coupled system, Yb:YAG microchip laser crystal 4 and flat output mirror 6 form average chamber, insertion Cr compact in chamber
4+: YAG adjusting Q crystal 5 obtains the hundreds of psec narrow spaces 1030nm wavelength pulsed laser of Gao Zhongying, and its repetition rate > 1KHZ, pulsewidth is 500 psecs, beam quality M
2< 1.2.
In light beam coupling system: 1030nm45 ° of plane total reflective mirror 7, a 1030nm45 ° plane total reflective mirror 9 are coated with 45 ° of 1030nm anti-reflection deielectric-coating.Collimating lens 8 is plano-convex spherical lens, and be coated with 0 ° of 1030nm anti-reflection deielectric-coating, focal length is about 50mm, is collimated to 1 ~ 2mm after flashlight passes through.Cylindrical focusing lens (10) is piano convex cylindrical lens, be coated with 1030nm anti-reflection deielectric-coating, focal length is 100mm ~ 200mm, flashlight by after be compressed to 120um ~ 140um at vertical direction and be coupled in Yb:YAG slab guide (12).
Shown in Fig. 3, Fig. 4 based in the amplifying stage pump coupling structure of planar waveguiding structure: Yb:YAG slab guide 12 adopts profile pump, and coupling pump light is entered in Yb:YAG slab guide 12 by proximity direct-coupling or pump coupling lens 15 by diode laser matrix 14.Pump coupling lens 15 are piano convex cylindrical lens, are coated with 1030nm anti-reflection deielectric-coating, and focal length is 20mm ~ 50mm.Diode laser matrix 14 luminescence center wavelength is 940nm or 976nm.
Shown in Fig. 5 based in the amplifying stage planar waveguiding structure of planar waveguiding structure: Yb:YAG slab guide 12, be 2at% ~ 5at% by doping content, be of a size of the Yb:YAG crystal of 13mm × 6mm × 150um, the upper and lower bonding of the sapphire crystal being 13mm × 6mm × 1mm with two unadulterated sizes forms.
Shown in Fig. 1, Fig. 2 based in the amplifying stage of planar waveguiding structure: the first plano-concave cylindrical mirror 13, second plano-concave cylindrical mirror 11 is coated with 0 ° of 1030nm anti-reflection deielectric-coating.Profile pump is adopted between diode laser matrix 14 and Yb:YAG slab guide 12.Yb:YAG slab guide 12 is placed on the focus place of cylindrical focusing lens 10, after flashlight is coupled into waveguide, obtains 1cm in Yb:YAG slab guide 12
-1~ 2cm
-1small signal gain, 3 ~ 5 times amplify after its single pulse energy can be amplified to more than 1mJ.
Whole system does not need multi-stage cascade and complicated structure based on the structure of microplate+slab guide, simple and compact for structure, reliable and stable.Obtain the stable output of Gao Zhongying subnanosecond 1030nm pulse laser of more than 1MW, output beam has good polarization characteristic and beam quality (M
2< 1.2), repetition rate > 1KHZ, pulsewidth 500 psec, single pulse energy > 1mJ, peak power reaches 2MW.
Experiment shows, 1030nm all solid state laser of the present invention, has simple and compact for structure, reliable and stable, wavelength is 1030nm, repetition rate > 1KHZ, pulsewidth hundreds of psec, peak power can reach more than 1MW, is suitable for high-precision laser range-finding and laser radar application.
Claims (10)
1. a 1030nm all solid state laser, be characterised in that its structure comprises the subnanosecond local oscillator level based on micro sheet structure, based on amplifying stage and the light beam coupling system of planar waveguiding structure, the described subnanosecond local oscillator level based on micro sheet structure comprises centre wavelength 940nm laser diode (1), the focusing coupled system be relatively made up of the convex surface of two planoconvex spotlights (2,3), Yb:YAG microchip laser crystal (4), the Cr that band tail optical fiber exports successively
4+: YAG adjusting Q crystal (5) and flat output mirror (6); Described light beam coupling system comprises 1030nm45 ° of plane total reflective mirror (7), collimating lens (8), 1030nm45 ° plane total reflective mirror (9) and cylindrical focusing lens (10) successively; The described amplifying stage based on planar waveguiding structure comprises diode laser matrix (14), pump coupling mirror (15), the first plano-concave cylindrical mirror (13), Yb:YAG slab guide (12) and the second plano-concave cylindrical mirror (11) successively; Being compressed it at quick shaft direction by described cylindrical focusing lens (10) after pulse laser that local oscillator level exports by described collimating lens (8) collimation is coupled in described Yb:YAG slab guide (12), described plano-concave cylindrical mirror (11) and plano-concave cylindrical mirror (13) come and go the difference of number of times in waveguide according to flashlight, mutual angle is 1 ° ~ 2 °, and the pump light that described diode laser matrix (14) exports carries out pumping amplification from the side of described Yb:YAG slab guide (12) to laser.
2. 1030nm all solid state laser according to claim 1, the doping content that it is characterized in that described Yb:YAG microchip laser crystal (4) is 8at% ~ 12at%, thickness is 1 ~ 2mm, its one side is coated with 940nm anti-reflection, the high anti-deielectric-coating of 1030nm, and another side is coated with 1030nm anti-reflection deielectric-coating.
3. 1030nm all solid state laser according to claim 1, is characterized in that described Cr
4+: YAG adjusting Q crystal (5) is 60% ~ 80% to the initial transmission of 1030nm laser.
4. 1030nm all solid state laser according to claim 1, is characterized in that described flat output mirror (6) is coated with that 940nm is high anti-, 1030nm transmitance is the deielectric-coating of 50% ~ 70%.
5. 1030nm all solid state laser according to claim 1, is characterized in that two planoconvex spotlights (2,3) of described focusing coupled system are coated with 940nm anti-reflection deielectric-coating.
6. 1030nm all solid state laser according to claim 1, is characterized in that described collimating lens (8), cylindrical focusing lens (10) is coated with 1030nm anti-reflection deielectric-coating.
7. 1030nm all solid state laser according to claim 1, is characterized in that the first described plano-concave cylindrical mirror (13) and the second plano-concave cylindrical mirror (11) are coated with 1030nm anti-reflection deielectric-coating.
8. 1030nm all solid state laser according to claim 1, is characterized in that described Yb:YAG slab guide (12) is 2at% ~ 5at% by doping content, is of a size of the upper and lower bonding of sapphire crystal that the Yb:YAG crystal of 13mm × 6mm × 150um and two unadulterated sizes be 13mm × 6mm × 1mm and forms.
9. 1030nm all solid state laser according to claim 1, is characterized in that coupling pump light enters in Yb:YAG slab guide (12) by proximity direct-coupling or through pump coupling lens (15) by described diode laser matrix (14).
10. the 1030nm all solid state laser according to any one of claim 1 to 9, is characterized in that described diode laser matrix (14) luminescence center wavelength is 940nm or 976nm.
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| CN201510003278.9A CN104577687A (en) | 2015-01-04 | 2015-01-04 | All-solid-state laser device of 1030 nm |
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|---|---|---|---|
| CN201510003278.9A CN104577687A (en) | 2015-01-04 | 2015-01-04 | All-solid-state laser device of 1030 nm |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006735A (en) * | 2015-08-19 | 2015-10-28 | 天津大学 | Double-crystal multi-pass type femtosecond laser amplification system |
| CN111939304A (en) * | 2020-10-19 | 2020-11-17 | 武汉光谷航天三江激光产业技术研究院有限公司 | Laser virus killing device based on beam shaping and refraction and reflection control |
| CN113745954A (en) * | 2020-05-27 | 2021-12-03 | 山东大学 | Light beam pointing stabilization system |
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| CN203150893U (en) * | 2013-01-16 | 2013-08-21 | 北京工业大学 | Multi-way slab laser amplifier |
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2015
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN203150893U (en) * | 2013-01-16 | 2013-08-21 | 北京工业大学 | Multi-way slab laser amplifier |
Non-Patent Citations (3)
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| ALEX DERGACHEV ET AL.: "Review of Multipass Slab Laser Systems", 《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》 * |
| DAVID WELFORD: "Passively Q-switched lasers", 《IEEE CIRCUITS & DEVICES MAGAZINE》 * |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006735A (en) * | 2015-08-19 | 2015-10-28 | 天津大学 | Double-crystal multi-pass type femtosecond laser amplification system |
| CN113745954A (en) * | 2020-05-27 | 2021-12-03 | 山东大学 | Light beam pointing stabilization system |
| CN111939304A (en) * | 2020-10-19 | 2020-11-17 | 武汉光谷航天三江激光产业技术研究院有限公司 | Laser virus killing device based on beam shaping and refraction and reflection control |
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Application publication date: 20150429 |