CN104576870A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
- Publication number
- CN104576870A CN104576870A CN201310500242.2A CN201310500242A CN104576870A CN 104576870 A CN104576870 A CN 104576870A CN 201310500242 A CN201310500242 A CN 201310500242A CN 104576870 A CN104576870 A CN 104576870A
- Authority
- CN
- China
- Prior art keywords
- light
- insulating layer
- transparent insulating
- emitting component
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003475 lamination Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 101
- 239000004065 semiconductor Substances 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 9
- 229910001195 gallium oxide Inorganic materials 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- QTPKWWJYDWYXOT-UHFFFAOYSA-N [W+4].[O-2].[In+3] Chemical compound [W+4].[O-2].[In+3] QTPKWWJYDWYXOT-UHFFFAOYSA-N 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011153 ceramic matrix composite Substances 0.000 description 1
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OVXQHPWHMXOFRD-UHFFFAOYSA-M ecothiopate iodide Chemical compound [I-].CCOP(=O)(OCC)SCC[N+](C)(C)C OVXQHPWHMXOFRD-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting component. The light-emitting component comprises a light-emitting tandem, a transparent insulating layer, and an electrode zone, wherein the light-emitting tandem at least comprises an active layer; the transparent insulating layer is arranged on the light-emitting tandem and comprises an edge; the electrode zone comprises a first electrode arranged on the transparent insulating layer; the first electrode comprises an edge; the superficial area of the surface, away from the transparent insulating layer, of the first electrode is smaller than the superficial area of the surface, away from the light-emitting tandem, of the transparent insulating layer; the refractive index of the transparent insulating layer is 1-3.4, and the penetration rate (T%) is higher than 80%.
Description
Technical field
The present invention relates to a light-emitting component and manufacture method thereof, particularly relate to the light-emitting component that has a transparent insulating layer.
Background technology
Light-emitting diode (light-emitting diode, LED) principle of luminosity is the energy difference utilizing electronics movement between n-type semiconductor and p-type semiconductor, in the form of light by fault offset, such principle of luminosity is different from the principle of luminosity of incandescent lamp heating, and therefore light-emitting diode is called as cold light source.In addition, light-emitting diode has the advantages such as high-durability, the life-span is long, light and handy, power consumption is low, therefore illumination market is now placed high hopes for light-emitting diode, be regarded as the illuminations of a new generation, replace conventional light source gradually, and be applied to various field, as traffic sign, backlight module, street lighting, Medical Devices etc.
Figure 1A is existing light emitting element structure schematic diagram.As shown in Figure 1A, existing light-emitting component 100 includes a transparency carrier 11, and is positioned at semiconductor laminated 12 on transparency carrier 11, and at least one electrode 14 is positioned on above-mentioned semiconductor laminated 12, wherein above-mentioned semiconductor laminated 12 from top to bottom at least comprise one first conductive-type semiconductor layer 120, active layer 122, and one second conductive-type semiconductor layer 124.
In addition, above-mentioned light-emitting component 100 can also be connected with other elements combinations to form a light-emitting device (light-emitting apparatus) further.Figure 1B is existing luminous device structure schematic diagram, and as shown in Figure 1B, a light-emitting device 200 comprises the secondary carrier (sub-mount) 15 that has at least one circuit 150; At least one solder (solder) 13 is positioned on above-mentioned carrier 15, above-mentioned light-emitting component 100 bonding to be fixed on time carrier 15 and the substrate 11 of light-emitting component 100 is formed with the circuit 150 on secondary carrier 15 to be electrically connected by this solder 13; One electric connection structure 16, to be electrically connected the electrode 14 of light-emitting component 100 and the circuit 150 on time carrier 15; Wherein, above-mentioned secondary carrier 15 can be that lead frame (lead frame) or large scale inlay substrate (mounting substrate), plans and improve its radiating effect to facilitate the circuit of light-emitting device 200.
Summary of the invention
The invention provides a light-emitting component, comprise: a luminous lamination, at least comprises an active layer; One transparent insulating layer is positioned on luminous lamination, and transparent insulating layer has an edge; And an electrode district, comprise one first electrode and be positioned on transparent insulating layer, and the first electrode has an edge; Wherein the first electrode is less than the surface area of transparent insulating layer away from the surface of luminous lamination away from the surface area on the surface of transparent insulating layer, and the refractive index of transparent insulating layer is between 1 to 3.4, and penetrance (T%) is greater than 80%.
Accompanying drawing explanation
Figure 1A is existing light emitting element structure schematic diagram, and Figure 1B is existing luminous device structure schematic diagram;
Fig. 2 A is the top view of the light-emitting component of first embodiment of the invention, and Fig. 2 B is the profile of Fig. 2 A along hatching AA ';
Fig. 3 is the bulb decomposing schematic representation of second embodiment of the invention.
Symbol description
1: light-emitting component 2: bulb
11: transparency carrier 12: semiconductor laminated
13: solder 14: electrode
15: secondary carrier 16: electric connection structure
20: substrate 21: tack coat
22: reflector 23: transparency conducting layer
24: insulating barrier 25: luminous lamination
26: electric contacting layer 27: electrode district
28: transparent insulating layer 30: the second electrode
41: lampshade 42: lens
43: support plate 44: light emitting module
45: lamp socket 46: radiating fin
47: joint portion 48: electric connector
100: light-emitting component 120: the first conductive-type semiconductor layer
122: active layer 124: the second conductive-type semiconductor layer
150: circuit 200: light-emitting device
251: window layers 252: the first conductive-type semiconductor layer
253: active layer 254: the second conductive-type semiconductor layer
271: the first electrodes 272: extension electrode
281: edge 2711: edge
2721: the first branch line 2722: the second branch lines
C: center
Embodiment
In order to make of the present inventionly to describe more detailed and complete, please refer to following description and coordinating the accompanying drawing of Fig. 2-Fig. 3.
Fig. 2 A is the light-emitting component top view of first embodiment of the invention, and Fig. 2 B is the profile of Fig. 2 A along hatching AA '.As shown in Figure 2 B, a light-emitting component 1 has a substrate 20; One tack coat 21, is positioned on substrate 20; One reflector 22, is positioned on tack coat 21; One transparency conducting layer 23, is positioned on reflector 22; One luminous lamination 25, is positioned on transparency conducting layer 23; One insulating barrier 24, between transparency conducting layer 23 and luminous lamination 25; One electric contacting layer 26, is positioned on luminous lamination 25; One transparent insulating layer 28 to be positioned on luminous lamination 25 and contact electric contacting layer 26; One electrode district 27 to be positioned on transparent insulating layer 28 and electric contacting layer 26 and to comprise one first electrode 271 and an extension electrode 272, wherein the first electrode 271 to be positioned on transparent insulating layer 28 and extension electrode 272 is positioned on electric contacting layer 26, wherein the first electrode 271 is less than the surface area of transparent insulating layer 28 away from the surface of luminous lamination 25 away from the surface area on the surface of transparent insulating layer 28, and the refractive index of transparent insulating layer is between 1 to 3.4 and penetrance (T%) is greater than 80%; And one second electrode 30, be positioned under substrate 20.Luminous lamination 25 has a window layers 251, between transparency conducting layer 23 and electrode district 27; One first conductive-type semiconductor layer 252, between window layers 251 and electrode district 27; One active layer 253, between the first conductive-type semiconductor layer 252 and electrode district 27; And one second conductive-type semiconductor layer 254, between active layer 253 and electrode district 27, wherein the second conductive-type semiconductor layer 254 is exposed and surface that is that do not contact with electric contacting layer 26, extension electrode 272 and transparent insulating layer 28 is the surface of alligatoring.
Electrode district 27 and/or the second electrode 30, in order to accept external voltage, can be made up of transparent conductive material or metal material.Transparent conductive material is including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), indium zinc oxide (IZO) or diamond-like carbon film (DLC).Metal material is including but not limited to the alloy etc. of aluminium (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), plumbous (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co) or above-mentioned material.As shown in Figure 2 A, first electrode 271 is roughly positioned on the central area of the second conductive-type semiconductor layer 254, extension electrode 272 has one first branch line 2721 and one second branch line 2722, first branch line 2721 extends to the border of light-emitting component 1 from the first electrode 271, the two ends of the second branch line 2722 extend from the direction of two side direction of the first branch line 2721 away from the first branch line respectively, and the border of roughly immediate with it light-emitting component 1 of bearing of trend is parallel.As shown in Figure 2 B, extension electrode 272 is positioned on electric contacting layer 26, and at least one surface of coated electric contacting layer 26.
Electric contacting layer 26 between extension electrode 272 and luminous lamination 25, to form the ohmic contact between extension electrode 272 and luminous lamination 25.Electric contacting layer 26 electrically identical with the second conductive-type semiconductor layer 254, its material can be semi-conducting material, comprise more than one element, this element can be selected from the group that (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) are formed.
Transparent insulating layer 28 is between the first electrode 271 and luminous lamination 25, in this embodiment, partially transparent insulating barrier 28 cover part electric contacting layer 26 makes the first electrode 271 more smooth away from the surface of substrate, to avoid when transparent insulating layer 28 does not cover electric contacting layer 26, the difference in height of its joining place causes the first electrode 271 to produce depression away from the surface of substrate.The refractive index of transparent insulating layer 28 is between 1 to 3.4, better, and the refractive index of transparent insulating layer 28 is between 1.6 to 3.4, better again, and the refractive index of transparent insulating layer 28 is between 2 to 3.4.Transparent insulating layer 28 for luminous lamination 25 the wavelength of light that sends have the penetrance (T%) being greater than 80%, preferably, penetrance (T%) is greater than 90%, better again, and penetrance (T%) is greater than 95%.In this embodiment, penetrance (T%) is greater than 98%.As shown in Figure 2 A, transparent insulating layer 28 has an edge 281, the edge 281 of transparent insulating layer 28 is away from the center C of the second conductive-type semiconductor layer 254, first electrode 271 has an edge 2711, the edge 2711 of the first electrode 271 is away from the center C of the second conductive-type semiconductor layer 254, and the part edge 281 of transparent insulating layer 28 protrudes from the edge 2711 of the first electrode 271.In addition, electrode 271 is less than the surface area of transparent insulating layer 28 away from the surface of luminous lamination 25 away from the surface area on the surface of transparent insulating layer 28, therefore can improve the light extraction efficiency of light-emitting component 1 and can improve the axial brightness of light-emitting component 1.Preferably, the surface area of transparent insulating layer 28 is between 5% to 97% of the surface area of active layer 253.In this embodiment, the surface area of transparent insulating layer 28 is 7.7% of the surface area of active layer 253.Transparent insulating layer 28 comprises oxide material, wherein oxide material is such as but not limited to comprising tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), gallium phosphide (GaP), indium oxide cerium (ICO), indium oxide tungsten (IWO), indium oxide titanium (ITiO), indium zinc oxide (IZO), indium oxide gallium (IGO), the combination of gallium oxide aluminium zinc (GAZO) or above-mentioned material.In the present embodiment, transparent insulating layer 28 is aluminum zinc oxide (AZO), and formed in the process of transparent insulating layer 28 on luminous lamination 25 and pass into oxygen, by sheet resistance and the penetrance of adjustment oxygen intake modulation aluminum zinc oxide (AZO) film, make it have be greater than 80% penetrance and there is lower electronic conduction ability.Preferably, the thickness of transparent insulating layer 28 is not less than 800 dusts
time, the film resistor of transparent insulating layer 28 is greater than 10 Ω/ (Ohm/Sq), better again, is greater than 10
3Ω/.In the present embodiment, the film resistor of transparent insulating layer 28 is greater than 10
6Ω/.The thickness of transparent insulating layer 28 is such as but not limited to being not less than 800 dusts
.In the present embodiment, the thickness of transparent insulating layer 28 is 0.5 micron (μm).
The material of luminous lamination 25 can be semi-conducting material, comprise more than one element, this element can be selected from the group that gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) are formed.Conventional material is as the group III-nitride such as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc.Above-mentioned first conductive-type semiconductor layer 252 and the second conductive-type semiconductor layer 254 be electrically, polarity or alloy different, respectively in order to provide the semiconductor material monolayer of electronics and hole or sandwich construction (" multilayer " refers to two layers or more, as follows).It electrically selects can be the two the combination any in p-type, N-shaped and i type.Active layer 253 be above-mentioned two parts electrical, polarity or alloy is different or respectively in order to provide between electronics and the semi-conducting material in hole, may change for electric energy and luminous energy or be induced the region of changing.The structure of active layer 253 is as single heterojunction structure (single heterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side doubleheterostructure; Or multi layer quantum well (multi-quantum well DDH); MQW).Moreover the logarithm of adjustment quantum well also can change emission wavelength.
Window layers 251 is transparent for active layer 253 issued light, its material can be transparent conductive material, including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP) or indium zinc oxide (IZO).
The material of transparency conducting layer 23 is transparent for luminous lamination 25 issued light, ohmic contact between window layers 251 and reflector 22 can be increased and electric current conducts and diffusion, and form omnidirectional reflection (Omni-Directional Reflector, ODR) with reflector 22.Its material can be transparent conductive material, including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), gallium phosphide (GaP), indium oxide cerium (ICO), indium oxide tungsten (IWO), indium oxide titanium (ITiO), indium zinc oxide (IZO), indium oxide gallium (IGO), the combination of gallium oxide aluminium zinc (GAZO) or above-mentioned material.
Insulating barrier 24 for luminous lamination 25 the penetrance of light sent out be greater than 90%, refractive index is less than 1.4, is preferably between 1.3 and 1.4.The material of insulating barrier 24 can include but not limited to non-oxide insulative material, such as, be benzocyclobutene (BCB), cyclic olefin polymer (COC), fluorocarbon polymer (Fluorocarbon Polymer), silicon nitride (SiN
x), calcirm-fluoride (CaF
2) or magnesium fluoride (MgF
2); The material of insulating barrier 24 can comprise the compound of halide or IIA race and VII race, such as calcirm-fluoride (CaF
2) or magnesium fluoride (MgF
2).In this embodiment, the material of insulating barrier 24 is magnesium fluoride (MgF
2).The refractive index of insulating barrier 24 is less than the refractive index of window layers 251 and transparency conducting layer 23, therefore between window layers 251 and insulating barrier 24, the critical angle at interface is less than the critical angle at interface between window layers 251 and transparency conducting layer 23, so after luminous lamination 25 issued light directive insulating barrier 24, the probability that the interface between window layers 251 and insulating barrier 24 forms total reflection increases.
The light of self-luminous lamination 25 can be reflected in reflector 22, its material can be metal material, including but not limited to the alloy etc. of copper (Cu), aluminium (Al), tin (Sn), gold (Au), silver (Ag), plumbous (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or above-mentioned material.Tack coat 21 can connection substrate 20 and reflector 22, can have multiple subordinate layer (not shown).The material of tack coat 21 can be transparent conductive material or metal material, transparent conductive material is including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP), indium oxide cerium (ICO), indium oxide tungsten (IWO), indium oxide titanium (ITiO), indium zinc oxide (IZO), indium oxide gallium (IGO), the combination of gallium oxide aluminium zinc (GAZO) or above-mentioned material.Metal material is including but not limited to the alloy etc. of copper (Cu), aluminium (Al), tin (Sn), gold (Au), silver (Ag), plumbous (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or above-mentioned material.
The luminous lamination 25 that substrate 20 can be located thereon in order to support and other layer or structure, its material can be transparent material or electric conducting material.Transparent material is including but not limited to sapphire (Sapphire), diamond (Diamond), glass (Glass), epoxy resin (Epoxy), quartz (Quartz), acryl (Acryl), aluminium oxide (Al
2o
3), zinc oxide (ZnO) or aluminium nitride (AlN) etc.Electric conducting material is including but not limited to copper (Cu), aluminium (Al), molybdenum (Mo), tin (Sn), zinc (Zn), cadmium (Cd), nickel (Ni), cobalt (Co), diamond-like carbon film (Diamond Like Carbon; DLC), graphite (Graphite), carbon fiber (Carbon fiber), metal-base composites (Metal Matrix Composite; MMC), ceramic matric composite (CeramicMatrix Composite; CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), carborundum (SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallium oxide (LiGaO
2) or lithium aluminate (LiAlO
2).
Do not include transparent insulating layer 28 with one, the light-emitting component that other structures are all identical is compared, and the electric current of the light-emitting component 1 of the present embodiment exceeds about 6 to 7%, therefore light extraction efficiency improves.In another embodiment, the thickness of transparent insulating layer 28 is 1 μm, and the thickness compared to transparent insulating layer 28 is the light-emitting component of 0.5 μm, and its electric current is higher again.In another embodiment, the thickness of transparent insulating layer 28 is 2 μm, and the thickness compared to transparent insulating layer 28 is the light-emitting component of 1 μm, and its electric current exceeds again about 5%, and therefore light extraction efficiency is higher again.
Fig. 3 is that second embodiment of the invention discloses a bulb decomposing schematic representation.Bulb 2 comprises lampshade 41, lens 42, light emitting module 44, lamp socket 45, radiating fin 46, joint portion 47 and an electric connector 48.Wherein light emitting module 44 comprises a support plate 43, and on support plate 43, comprise the light-emitting component 1 at least one above-described embodiment.
Though each accompanying drawing and explanation only distinguish corresponding specific embodiment above, but, in each embodiment illustrated or disclosed element, execution mode, design criterion and know-why except aobviously each other conflicting mutually, contradiction or be difficult to except common implementing, we when can according to its required arbitrarily with reference to, exchange, collocation, to coordinate or merging.
Although the present invention has illustrated as above, the scope that so it is not intended to limiting the invention, enforcement order or the material used and manufacture method method.The various modification that the present invention is done and change, neither de-spirit of the present invention and scope.
Claims (10)
1. a light-emitting component, Bao Han ︰
Luminous lamination, comprises at least one active layer;
Transparent insulating layer is positioned on this luminous lamination, and this transparent insulating layer has an edge; And
Electrode district, comprises the first electrode, is positioned on this transparent insulating layer, and this first electrode has an edge;
Wherein this first electrode is less than the surface area of this transparent insulating layer away from the surface of this luminous lamination away from the surface area on the surface of this transparent insulating layer, and the refractive index of this transparent insulating layer is between 1 to 3.4, and penetrance (T%) is greater than 80%.
2. light-emitting component as claimed in claim 1, wherein this edge of part of this transparent insulating layer protrudes from this edge of this first electrode.
3. light-emitting component as claimed in claim 1, wherein the area of this transparent insulating layer be roughly the area of this active layer 5% to 97% between.
4. light-emitting component as claimed in claim 1, wherein the thickness of this transparent insulating layer is not less than 800 dusts
5. light-emitting component as claimed in claim 1, wherein this transparent insulating layer comprises monoxide material.
6. light-emitting component as claimed in claim 5, wherein this oxide material comprises aluminum zinc oxide.
7. light-emitting component as claimed in claim 1, also comprises an electric contacting layer, to be positioned on this luminous lamination and to contact this transparent insulating layer.
8. light-emitting component as claimed in claim 7, wherein this electrode district also comprises extension electrode, this electric contacting layer coated.
9. light-emitting component as claimed in claim 7, wherein this transparent insulating layer of part is covered on this electric contacting layer of part.
10. light-emitting component as claimed in claim 1, also comprises insulating barrier, is positioned under this luminous lamination.
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|---|---|---|---|
| CN201310500242.2A CN104576870B (en) | 2013-10-22 | 2013-10-22 | Light-emitting component |
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| CN104576870A true CN104576870A (en) | 2015-04-29 |
| CN104576870B CN104576870B (en) | 2018-11-16 |
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| JP2019075547A (en) * | 2017-10-18 | 2019-05-16 | ローム株式会社 | Semiconductor light-emitting device |
| CN110998873A (en) * | 2017-06-29 | 2020-04-10 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
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| CN104576870B (en) | 2018-11-16 |
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