CN104576849A - Method for improving ultraviolet light intensity of ZnO micron line/nano wire - Google Patents
Method for improving ultraviolet light intensity of ZnO micron line/nano wire Download PDFInfo
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- CN104576849A CN104576849A CN201410812473.1A CN201410812473A CN104576849A CN 104576849 A CN104576849 A CN 104576849A CN 201410812473 A CN201410812473 A CN 201410812473A CN 104576849 A CN104576849 A CN 104576849A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000002131 composite material Substances 0.000 claims abstract description 37
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000012153 distilled water Substances 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 33
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000005728 strengthening Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000012528 membrane Substances 0.000 abstract 2
- YTCQFLFGFXZUSN-BAQGIRSFSA-N microline Chemical compound OC12OC3(C)COC2(O)C(C(/Cl)=C/C)=CC(=O)C21C3C2 YTCQFLFGFXZUSN-BAQGIRSFSA-N 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- 238000001132 ultrasonic dispersion Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 113
- 239000011787 zinc oxide Substances 0.000 description 60
- 238000012360 testing method Methods 0.000 description 11
- 238000004020 luminiscence type Methods 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000001748 luminescence spectrum Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000764238 Isis Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000005395 radioluminescence Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- Computer Hardware Design (AREA)
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Abstract
The invention discloses a method for improving the ultraviolet light intensity of a ZnO micron line/nano wire, and relates to application of an optoelectronic system and a light emitting device based on a ZnO micron/nano structure in fields such as semiconductor techniques, biomedicine and energy environment. The method comprises the following steps: washing a substrate, namely, performing ultrasonic washing on a substrate which takes single crystal silicon wafer as a composite base by using acetone and ethanol respectively; growing an Au membrane layer with the thickness of 60-70nm on a Si substrate; growing a SiO2 film layer as a medium layer on the Au membrane, thereby obtaining a Si-Au-SiO2 composite base, wherein the thickness of the SiO2 film is 5-100nm, the thickness of the SiO2 film with the most remarkable ultraviolet intensification effect is 5-10nm (or the thickness of the SiO2 film is 5-10nm); putting the micron line/nano wire with the <0001> orientation into an ethanol solution or distilled water, performing ultrasonic dispersion for 3-5 minutes, and dropping on the Si-Au-SiO2 composite base by using a dropper. The ultraviolet light intensity of the ZnO micro line/nano wire on the composite base is remarkably improved when being compared with that of a ZnO micro line/nano wire without a composite base.
Description
Technical field
The present invention adopts Si-Au-SiO
2composite substrate, strengthen a kind of design of the ultra-violet light-emitting intensity of ZnO micro wire and nano wire, preparation technology and detection technique, the Au film thickness in composite substrate is 60 ~ 70nm, SiO
2film thickness is 5 ~ 10nm.The present invention impels based on the electro-optical system of ZnO micro-nano structure and luminescent device at semiconductor technology, biomedical, the application in the fields such as energy environment.
Background technology
Zinc oxide (ZnO) is the direct wide band gap semiconducter of hexagonal wurtzite structure, and energy gap is 3.37eV, and corresponding ultra-violet light-emitting wave band, exciton bind energy is up to 60meV.The preparation technology of ZnO nano-wire is simple, and cost is low, has strong exciton effect.Based on the function element of ZnO nano-wire, as nano laser, photoelectron detector, field effect transistor, biology sensor, photocatalysis, solar cell etc. have become the focus material of optoelectronic areas research, have important application and demonstrate application prospect widely.
ZnO material easily produces the crystal defects such as Lacking oxygen in growth, and its radiative transistion probability and luminescent properties are reduced.How improving its luminous efficiency is problem demanding prompt solution in application.By improving the Structure and energy of material, quality and the luminous efficiency of ZnO material/device can be improved, but be subject to the band structure of material own, and the restriction such as growing technology and substrate, be difficult to make the luminous efficiency of ZnO to increase substantially.
In recent years, people start trial metallic surface plasma excimer (Surface plasmonpolarition, SPP) coupling and strengthen photoemissive characteristic, strengthen the light emission effciency of semiconductive luminescent materials.SPP is after the free electron of metal surface, under light or electron irradiation, collective oscillation occurs, and the interaction between light-wave electric magnetic field.Utilize local fields and the coupling effect of metal surface phasmon, the Photon state density at semiconductor light emitting center can be improved, strengthen the local electromagnetic field of semiconductor microactuator micro-nano structure, improve the radiative transistion probability of material.Therefore, the light adopting SPP structure to become enhancing semi-conducting material is launched, and the effective means of the band structure/wavelength of change semi-conducting material, causes the great interest of people and pays close attention to widely.
According to bibliographical information, the local surface plasma of the noble metals such as Au and Ag is utilized (to comprise nano particle, island, cellular and raster-like film) resonance coupling, ZnO film and nano-wire array can be strengthened, the mono-quantum of GaAs, InGaN quantum well, Si quantum dot, the fluorescence of LED and Schottky diode or electroluminescence intensity, and the wavelength modulating the nano wires such as CdS.
For avoiding the noble metal such as emitting semiconductor and Au, Ag, Pt, Cu SPP structure too closely to cause energy trasfer cancellation because of distance, separator can be added between semiconductor and metal film SPP, as semi-conducting material GaN, organic material PMMA, or dielectric material SiO
2deng, charge carrier is accumulated at the interface of dielectric layer and semiconductor microactuator micro-nano structure, thus strengthens the free electron of metal SPP structure and the interaction of photon further, form high local fields and the close coupling of metal surface phasmon, produce resonance, strengthen the light emitting performance of semi-conducting material.
Summary of the invention
The present invention prepares a kind of Si-Au-SiO
2composite substrate, strengthens design and the preparation method of ZnO micro wire and nano wire luminous intensity.
Strengthen a method for ZnO micro wire/nano wire ultra-violet light-emitting intensity, it is characterized in that, carry out according to following steps:
One. the cleaning of substrate: employing monocrystalline silicon piece is the substrate in composite substrate, adopts acetone and ethanol to carry out Ultrasonic Cleaning respectively;
The preparation of two .Au films: adopt magnetron sputtering technique, grows the Au film that a layer thickness is 60 ~ 70nm on a si substrate;
Three .SiO
2the preparation of dielectric layer: grow one deck SiO on Au film
2film, as dielectric layer, obtains Si-Au-SiO
2composite substrate, SiO
2film thickness is 5 ~ 100nm;
Selecting of four .ZnO nano wires: adopt ZnO nano-wire or the micro wire with <0001> orientation, diameter is respectively 1 ~ 3 μm and 200 ~ 500nm, and length is 20 ~ 600 μm;
Five. ZnO micro wire/nano wire is put into ethanolic solution or distilled water, after ultrasonic wave dispersion 3 ~ 5min, drops in Si-Au-SiO with dropper
2in composite substrate.
Further, SiO
2the thickness of film is 5 ~ 100nm.When thickness is 5 ~ 10nm, obtains the strongest ultra-violet light-emitting and strengthen effect.
Further, excite the ultra-violet light-emitting peak of ZnO nano-wire, accelerating voltage is 3 ~ 30kV, when wherein accelerating voltage is 10kV, obtains the strongest ultra-violet light-emitting and strengthens effect.
Further, excite the ultra-violet light-emitting peak of ZnO micro wire, accelerating voltage is 3 ~ 30kV, when wherein accelerating voltage is 15kV, obtains the strongest ultra-violet light-emitting and strengthens effect.
Adopt the cathode-luminescence spectrometer (CL) of configuration in ESEM (SEM), inspection Si-Au-SiO
2composite substrate is to the enhancing effect of the ultraviolet light of ZnO micro wire/nano wire, and the incident electron beam accelerating voltage of SEM is 3 ~ 30kV, and incident electron stream is 10
-8~ 10
-10a, operating distance is 12.5 ~ 13mm, and enlargement ratio is 4000 × ~ 20,000 × ~, lens isis is 40 ~ 100 μm, and current beam spot is 3 ~ 5; Photomultiplier tube detectors (PMT) voltage of CL spectrometer is 500 ~ 1500V, and fluorescence detection wavelength is 200 ~ 960nm, and diffraction grating is 1200mm/l, and slit is 3 ~ 5mm, and spectrometer resolution is 0.66nm; Adopt above-mentioned SEM and CL test parameter, can produce strong radiative transistion probability by excitation nano line/micro wire, radioluminescence and high detection efficient, wherein, work as SiO
2thickness is the ultra-violet light-emitting intensity of ZnO micro wire in the composite substrate of 5 ~ 10nm and nano wire, and obviously increase than the luminous intensity without complex matrix, the ZnO micro wire in the composite substrate of 5nm and the ultra-violet light-emitting intensity of nano wire add 5 times and 20 times respectively;
Accompanying drawing explanation
Fig. 1 is the Si-Au-SiO prepared to step 4 by step one
2composite substrate, and the schematic diagram of the ZnO micro wire/nano wire deposited thereon, wherein Au film thickness is 60 ~ 70nm, SiO
2film thickness is 5 ~ 100nm.The diameter of ZnO micro wire is 1 ~ 3 μm, and ZnO nano-wire diameter is 200 ~ 500nm, and the length of micro wire and nano wire is 20 ~ 600 μm;
The ESEM (SEM) that Fig. 2 adopts and cathode-luminescence spectrometer (CL) test macro (SEM-CL) schematic diagram.In Fig. 2,1-electron beam, 2-electromagnetic lens, 3-sample room, 4-sample stage, 5-sample, 6-cathode-luminescence spectrometer.
Fig. 3 is placed on Si-Au-SiO
2the ESEM secondary electron (SE) of the ZnO micro wire in composite substrate and nano wire as with corresponding cathode-luminescence (CL) as.Fig. 3 (a) and (b) to be diameter be SE picture and the CL picture of 2.48 μm, SE picture and the CL picture of (c) and (d) to be diameter be 500nm.
Fig. 4 compares and is placed on Si-Au-SiO
2the cathode-luminescence spectrum of the 300nm-ZnO nano wire in composite substrate and in monocrystalline substrate.Fig. 5 compares and is placed on Si-Au-SiO
2the cathode-luminescence spectrum of 1.6 μm of-ZnO micro wires in composite substrate and in monocrystalline substrate.
Fig. 6 adopts different SEM incident electron beam energies, excites the ultra-violet light-emitting peak of 300nm-ZnO nano wire.
Fig. 7 adopts different SEM incident electron beam energies, excites the ultra-violet light-emitting peak of 1.6 μm of-ZnO micro wires.
Embodiment
One. the cleaning of substrate: the n-type monocrystalline silicon piece of employing <100> orientation is the substrate in composite substrate, adopts acetone and ethanol respectively, carries out each 5min of Ultrasonic Cleaning;
The preparation of two .Au films: adopt magnetron sputtering technique, growing a layer thickness is on a si substrate the Au film of 60 ~ 70nm, and sputtering power is 250W, and speed is 0.46nm/s, vacuum degree be 10mtorr, Ar throughput is 40scum;
Three, SiO
2the preparation of dielectric layer: adopt PECVD technology, regrowth one deck SiO on Au film
2film, as dielectric layer, obtains Si-Au-SiO
2composite substrate, SiO
2film thickness is respectively 5nm, and 10nm, 20nm and 100nm are thick.
Four, the selecting of ZnO nano-wire: adopt ZnO nano-wire and the micro wire with <0001> orientation, diameter is respectively 1 ~ 3 μm and 200 ~ 500nm, and length is 20 ~ 600 μm;
Five, ZnO micro wire/nano wire is put into ethanolic solution or distilled water, after ultrasonic wave dispersion 3 ~ 5min, drop in Si-Au-SiO with dropper
2in composite substrate;
Fig. 1 is the Si-Au-SiO prepared to step 4 by step one
2composite substrate, and the schematic diagram of the ZnO micro wire/nano wire deposited thereon, wherein Au film thickness is 60 ~ 70nm, SiO
2film thickness is 5 ~ 100nm.The diameter of ZnO micro wire is 1 ~ 3 μm, and ZnO nano-wire diameter is 200 ~ 500nm, and the length of micro wire and nano wire is 20 ~ 600 μm;
The ESEM (SEM) that Fig. 2 adopts and cathode-luminescence spectrometer (CL) test macro (SEM-CL) schematic diagram.The electron beam launched in scanning electron microscope electron rifle is after electromagnetic lens focuses on, incide sample surfaces, solid luminescent material is excited to produce a large amount of electron-hole pairs, electron-hole composed emission photon, photon is received by the parabola of CL spectrometer front end or semi-ellipsoidal mirror, again through speculum and diffraction grating light splitting, by photomultiplier (PMT) or charge-coupled device (CCD) probe collection, finally show with the form of CL picture or spectrum.In Fig. 2,1-electron beam, 2-electromagnetic lens, 3-sample room, 4-sample stage, 5-sample, 6-cathode-luminescence spectrometer
Fig. 3 is placed on Si-Au-SiO
2the ESEM secondary electron (SE) of the ZnO micro wire in composite substrate and nano wire as with corresponding cathode-luminescence (CL) as.Fig. 3 (a) and (b) to be diameter be SE picture and the CL picture of 2.48 μm, SE picture and the CL picture of (c) and (d) to be diameter be 500nm.
Fig. 4 compares and is placed on Si-Au-SiO
2the cathode-luminescence spectrum of the 300nm-ZnO nano wire in composite substrate and in monocrystalline substrate.Si-Au-SiO
2siO in composite substrate
2thickness of dielectric layers is respectively 5, and 10,20 and 100nm, the test parameter of test cathode-luminescence spectrum: accelerating voltage is 10kV, and incident current is 10
-9a, bundle spot is 5, and operating distance is 12.6mm.Learnt by Fig. 4: the intrinsic peak of the ultraviolet emission of (1) ZnO nano-wire is 387nm; (2) SiO
2thickness of dielectric layers be 5nm composite substrate on the luminescence of ZnO nano-wire the strongest, compared with Si substrate, the thick SiO of 5nm, 10nm, 20nm
2composite substrate on the luminous intensity of ZnO micro wire be respectively 20 times, 2.8 times, 1.8 times, the thick SiO of 100nm
2composite substrate on the luminous intensity of ZnO nano-wire substantially identical with the luminous intensity of the ZnO nano-wire in monocrystalline substrate.Learnt by Fig. 4, adopt the SiO that 5 ~ 10nm is thick
2dielectric layer significantly improve the ultra-violet light-emitting intensity of ZnO nano-wire.
Fig. 5 compares and is placed on Si-Au-SiO
2the cathode-luminescence spectrum of 1.6 μm of-ZnO micro wires in composite substrate and in monocrystalline substrate.Si-Au-SiO
2siO in composite substrate
2thickness of dielectric layers is respectively 5, and 10,20 and 100nm.Accelerating voltage is 15kV.Same Fig. 4 of other test parameter of cathode-luminescence spectrum.Learnt by Fig. 5: the intrinsic peak of the ultraviolet emission of (1) ZnO micro wire is 392nm; (2) SiO
2thickness of dielectric layers be 5nm composite substrate on the luminescence of ZnO micro wire the strongest, compared with Si substrate, the thick SiO of 5nm, 10nm, 20nm and 100nm
2composite substrate on the luminous intensity of ZnO micro wire be respectively 5 times, 4.8 times, 2.5 times and 1.3 times.Test result shows, adopts Si-Au-SiO
2composite substrate, makes the ultra-violet light-emitting intensity of ZnO micro wire significantly improve, and this is that Au-SPP structure is coupled with ZnO micro wire the resonance enhancement produced.Adopt the SiO that 5nm is thick
2dielectric layer isolating metal SPP structure and ZnO micro wire, effectively can increase the recombination probability of charge carrier, makes the luminescence enhancement effect of ZnO micro wire the most obvious.The test result of Fig. 4 and Fig. 5 shows, adopts Si-Au-SiO
2composite substrate, wherein, SiO
2the thickness of dielectric layer is 5 ~ 10nm, significantly improves the ultra-violet light-emitting intensity of ZnO micro wire and nano wire.
Fig. 6 adopts different SEM incident electron beam energies, excites the ultra-violet light-emitting peak of 300nm-ZnO nano wire.Accelerating voltage is respectively 3, and 5,10,15,20 and 30kV.When accelerating voltage is 10kV, the ultra-violet light-emitting of ZnO nano-wire is the strongest, and emission wavelength is 387nm.This shows, adopts the accelerating voltage of 10kV to excite ZnO nano-wire, is conducive to improving its radiative transistion probability and luminous efficiency.Therefore, the CL spectrum of testing ZnO micro wire have employed the accelerating voltage (Fig. 4) of 10kV.
Fig. 7 adopts different SEM incident electron beam energies, excites the ultra-violet light-emitting peak of 1.6 μm of-ZnO micro wires.Accelerating voltage is respectively 3, and 5,10,15,20 and 30kV, the same Fig. 4 of other test parameter.When accelerating voltage is 15kV, the ultra-violet light-emitting of ZnO micro wire is the strongest, and emission wavelength is 392nm.This shows: (1) adopts the accelerating voltage of 15kV to excite ZnO micro wire, is conducive to improving its radiative transistion probability and luminous efficiency.Therefore, the CL spectrum of testing ZnO micro wire have employed the accelerating voltage (Fig. 5) of 15kV; (2) compared with ZnO micro wire, the intrinsic emitter peak blue shift of ZnO nano-wire 5nm, this is that the shell-nuclear structure of nano wire causes nanowire surface and heart portion band gap there are differences, and surface compression stress makes the band gap of nano wire narrow, spectrum peak blue shift.
Claims (6)
1. strengthen a method for ZnO micro wire/nano wire ultra-violet light-emitting intensity, it is characterized in that, carry out according to following steps:
One. the cleaning of substrate: employing monocrystalline silicon piece is the substrate in composite substrate, carries out Ultrasonic Cleaning;
The preparation of two .Au films: adopt magnetron sputtering technique, grows the Au film that a layer thickness is 60 ~ 70nm on a si substrate;
Three .SiO
2the preparation of dielectric layer: grow one deck SiO on Au film
2film, as dielectric layer, obtains Si-Au-SiO
2composite substrate, SiO
2film thickness is 5 ~ 100nm;
Selecting of four .ZnO nano wires: adopt ZnO nano-wire or the micro wire with <0001> orientation, diameter is respectively 1 ~ 3 μm and 200 ~ 500nm, and length is 20 ~ 600 μm;
Five. ZnO micro wire/nano wire is put into ethanolic solution or distilled water, after ultrasonic wave dispersion 3 ~ 5min, drops in Si-Au-SiO with dropper
2in composite substrate.
2. a kind of method strengthening ZnO micro wire/nano wire ultra-violet light-emitting intensity according to claim 1, is characterized in that:
SiO
2the thickness of film is 5 ~ 100nm.
3. a kind of method strengthening ZnO micro wire/nano wire ultra-violet light-emitting intensity according to claim 2, is characterized in that:
SiO
2the thickness of film is 5 ~ 10nm, obtains the strongest ultra-violet light-emitting and strengthens effect.
4. a kind of method strengthening ZnO micro wire/nano wire ultra-violet light-emitting intensity according to claim 1, is characterized in that:
Excite the ultra-violet light-emitting peak of ZnO micro wire/nano wire, accelerating voltage is 3 ~ 30kV.
5. a kind of method strengthening ZnO micro wire/nano wire ultra-violet light-emitting intensity according to claim 4, is characterized in that:
For ZnO nano-wire, when accelerating voltage is 10kV, obtains the strongest ultra-violet light-emitting and strengthen effect.
6. a kind of method strengthening ZnO micro wire/nano wire ultra-violet light-emitting intensity according to claim 4, is characterized in that:
For ZnO micro wire, when accelerating voltage is 15kV, obtains the strongest ultra-violet light-emitting and strengthen effect.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613968A (en) * | 2020-04-30 | 2020-09-01 | 南京航空航天大学 | Method for realizing ZnO micron line EHP laser |
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| CN102477291A (en) * | 2010-11-23 | 2012-05-30 | 海洋王照明科技股份有限公司 | Preparation method of ZnO nano-rod array |
| CN102957086A (en) * | 2012-10-25 | 2013-03-06 | 电子科技大学 | Deep sub-wavelength surface plasma laser |
| US8574948B2 (en) * | 2010-08-27 | 2013-11-05 | Iowa State University Research Foundation, Inc. | Method of improving power conversion efficiencies in dye-sensitized solar cells by facile surface treatment |
| CN103746056A (en) * | 2013-12-28 | 2014-04-23 | 华中科技大学 | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8574948B2 (en) * | 2010-08-27 | 2013-11-05 | Iowa State University Research Foundation, Inc. | Method of improving power conversion efficiencies in dye-sensitized solar cells by facile surface treatment |
| CN102477291A (en) * | 2010-11-23 | 2012-05-30 | 海洋王照明科技股份有限公司 | Preparation method of ZnO nano-rod array |
| CN102957086A (en) * | 2012-10-25 | 2013-03-06 | 电子科技大学 | Deep sub-wavelength surface plasma laser |
| CN103746056A (en) * | 2013-12-28 | 2014-04-23 | 华中科技大学 | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613968A (en) * | 2020-04-30 | 2020-09-01 | 南京航空航天大学 | Method for realizing ZnO micron line EHP laser |
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