CN104576705A - Array substrate, manufacturing method and display device - Google Patents
Array substrate, manufacturing method and display device Download PDFInfo
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- CN104576705A CN104576705A CN201510041447.8A CN201510041447A CN104576705A CN 104576705 A CN104576705 A CN 104576705A CN 201510041447 A CN201510041447 A CN 201510041447A CN 104576705 A CN104576705 A CN 104576705A
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Abstract
The invention discloses an array substrate, a manufacturing method and a display device. The manufacturing method is used for reducing voltage drop between a display area and a non-display area of the array substrate on the condition of not increasing the difficulty of an existing process, and improving the display quality. The array substrate comprises a substrate body which is divided into the display area and the non-display area. A thin film transistor is arranged on the substrate body and provided with a flat layer. The flat layer is provided with an organic light-emitting layer. The array substrate further comprises an upper electrode arranged on the organic light-emitting layer. At least the thickness of the portion, located on the non-display area, of the upper electrode is larger than the thickness of the portion, located on the display area, of the upper electrode.
Description
Technical field
The present invention relates to organic light emitting display technical field, particularly relate to a kind of array base palte and manufacture method, display unit.
Background technology
Prior art is as taking thin-film transistor as control element, the Display Technique that Organic Light Emitting Diode (Organic LightEmitting Diode, OLED) launches medium for light has high definition, wide viewing angle, easily realization bend the advantages such as flexibility display and be widely used.
Summary of the invention
Embodiments provide a kind of array base palte and manufacture method, display unit, in order under the condition not increasing existing technology difficulty, reduce the voltage drop between array base palte viewing area and non-display area, improve display quality.
A kind of array base palte that the embodiment of the present invention provides, comprise underlay substrate, described underlay substrate comprises viewing area and non-display area, the top electrode described underlay substrate being provided with thin-film transistor, organic luminous layer and being arranged on described organic luminous layer, the thickness being wherein positioned at the described top electrode of described non-display area is at least partly greater than the thickness of the described top electrode being positioned at described viewing area.
The array base palte provided by the embodiment of the present invention, because array base palte comprises the top electrode be arranged on organic luminous layer, the thickness being wherein positioned at the described top electrode of described non-display area is at least partly greater than the thickness of the described top electrode being positioned at described viewing area, namely the embodiment of the present invention adopts subregion to arrange the thickness of upper electrode layer, when ensureing the light transmittance of viewing area, effectively reduce the resistivity of the top electrode of non-display area, reduce the generation of electricity contact zone loose contact situation, thus the uniformity of display and the making yield of product can be improved.
Preferably, described thin-film transistor comprises: be positioned at the semiconductor active layer on described underlay substrate, gate insulator, grid, insulating barrier, source electrode and drain electrode successively; Or,
Described thin-film transistor comprises: be positioned at the grid on described underlay substrate, gate insulator, semiconductor active layer, source electrode and drain electrode successively.
Like this, thin-film transistor can adopt top-gate type structure, also can adopt bottom-gate type configuration, in actual production more flexibly, conveniently.
Preferably, resilient coating is provided with between described underlay substrate and described thin-film transistor.
Like this, the setting of resilient coating can play the effect of flat substrate substrate, the foreign atom in underlay substrate can be prevented to be diffused in thin-film transistor simultaneously.
Preferably, also comprise and be arranged on flatness layer on underlay substrate and pixel electrode, described flatness layer is between described thin-film transistor and organic luminous layer, described pixel electrode is positioned on described flatness layer, and the source electrode exposed by the via hole on flatness layer and thin-film transistor or drain is connected, described organic luminous layer is positioned on described pixel electrode.
Preferably, also comprise auxiliary electrode, described auxiliary electrode is positioned at the non-display area of underlay substrate, same layer is positioned at described pixel electrode, described top electrode to be positioned on described auxiliary electrode and to be electrically connected with described auxiliary electrode, and the thickness being positioned at the top electrode on described auxiliary electrode is greater than the thickness of the top electrode be positioned at above described pixel electrode.
Like this, the setting of auxiliary electrode can reduce the resistivity of top electrode further.
Preferably, power on very anode, or described in power on very negative electrode.
Like this, both positive voltage can be applied to top electrode, also negative voltage can be applied to top electrode, convenient in actual process process, simple.
Preferably, the material of described top electrode is the monofilm of tin indium oxide or indium zinc oxide, or is the composite membrane of tin indium oxide and indium zinc oxide.
Like this, the Material selec-tion of top electrode is convenient, simple.
The embodiment of the present invention additionally provides a kind of display unit, and described display unit comprises above-mentioned array base palte.
Display unit due to the embodiment of the present invention comprises above-mentioned array base palte, and therefore the display uniformity of the display unit of the embodiment of the present invention is better.
The embodiment of the present invention additionally provides a kind of manufacture method of array base palte, comprise the making of the making of thin-film transistor, the making of organic luminous layer and top electrode, in the making of described top electrode, the thickness of the described top electrode being positioned at array base palte non-display area is at least partly made to be greater than the thickness of the described top electrode being positioned at array base palte viewing area by patterning processes.
The manufacture method of the array base palte provided by the embodiment of the present invention, the thickness being positioned at array base palte viewing area is greater than because this manufacture method makes the thickness that the top electrode obtained is positioned at array base palte non-display area at least partly, therefore the embodiment of the present invention makes the top electrode that obtains when ensureing the light transmittance of viewing area, effectively can reduce the resistivity of the top electrode of non-display area, reduce the generation of electricity contact zone loose contact situation, thus the uniformity of array base palte display and the making yield of product can be improved.
Preferably, described patterning processes adopts intermediate tone mask plate or gray tone mask plate to make described top electrode, specifically comprises:
Organic luminous layer forms transparent conductive film;
Described transparent conductive film forms photoresist, by intermediate tone mask plate or gray tone mask board to explosure, development, form the photoresist complete area of coverage, photoresist part of footprint and without the photoresist area of coverage, wherein, the non-display area of the corresponding array base palte of the complete area of coverage of described photoresist, the viewing area of the corresponding array base palte in photoresist part of footprint;
By etching, remove the described transparent conductive film without the photoresist area of coverage, and remove the photoresist of photoresist part of footprint, expose the transparent conductive film of photoresist part of footprint;
By etching, remove the described transparent conductive film of the segment thickness exposed, form the top electrode being positioned at array base palte viewing area;
Remove residue photoresist, form the top electrode being positioned at array base palte non-display area, the thickness being positioned at the top electrode of described non-display area is greater than the thickness of the top electrode being positioned at described viewing area.
Like this, intermediate tone mask plate or gray tone mask plate is adopted to make top electrode, convenient in actual fabrication process, simple.
Accompanying drawing explanation
Fig. 1 is a kind of cross section structure schematic diagram of array base palte;
Fig. 2 is the another kind of cross section structure schematic diagram reducing the array base palte of top electrode resistivity;
Fig. 3 is that another reduces the cross section structure schematic diagram of the array base palte of top electrode resistivity;
The cross section structure schematic diagram of a kind of array base palte that Fig. 4 provides for the embodiment of the present invention;
The cross section structure schematic diagram of the another kind of array base palte that Fig. 5 provides for the embodiment of the present invention;
The cross section structure schematic diagram being provided with the array base palte of auxiliary electrode that Fig. 6 provides for the embodiment of the present invention;
The method flow diagram of a kind of array base palte making top electrode that Fig. 7 provides for the embodiment of the present invention;
Cross section structure schematic diagram after a kind of array base palte deposit transparent conductive film that Fig. 8 provides for the embodiment of the present invention;
Fig. 9 for the embodiment of the present invention provide lithographic process carried out to the transparent conductive film of Fig. 8 deposition time cross section structure schematic diagram.
Embodiment
As shown in Figure 1, the primary structure of array base palte comprises: underlay substrate 10, be arranged on the resilient coating 11 on underlay substrate 10, be arranged on the semiconductor active layer 12 on resilient coating 11, be arranged on the gate insulator 13 on semiconductor active layer 12, be arranged on the grid 14 on gate insulator 13, be arranged on the insulating barrier 15 on grid 14, be arranged on the source electrode 16 on insulating barrier 15 and drain electrode 17, be arranged on the flatness layer 18 in source electrode 16 and drain electrode 17, be arranged on the pixel electrode 19 on flatness layer 18, be arranged on the organic light emission confining layers 110 on pixel electrode 19, be arranged on the organic luminous layer 111 in organic light emission confining layers 110, be arranged on the top electrode 112 on organic luminous layer 111.
Prior art is in order to improve the light utilization efficiency of organic luminous layer 111, and top electrode 112 adopts transparent conductive material usually, and transparent conductive material generally has higher resistivity than single conductive metallic material; In addition, in order to improve the display brightness of injection display screen, also need the light transmittance increasing transparent conductive material, the increase of light transmittance then adopts the mode of thinning transparency conducting layer to realize usually.The reduction of electrically conducting transparent layer thickness further increases its resistivity, in large-sized display screen, between viewing area and non-display area, larger voltage drop can occur, and the emission current affecting luminescent layer injects, and causes display quality deterioration.
As shown in Figure 2, in order to reduce the voltage drop between the viewing area of array base palte and non-display area, increase layer of metal routing layer 20 at non-display area, metal routing layer 20 is electrically connected with top electrode 112, reach reduction resistance, and then reduce the object of the voltage drop between viewing area and non-display area.In addition, as shown in Figure 3, the mode adopting electrically conductive ink 30 to be connected with top electrode 112 reduces resistance, and then reduces the voltage drop between viewing area and non-display area.
In sum, between array base palte viewing area and non-display area, larger voltage drop can be there is, affect the luminescence of luminescent layer, cause display quality deterioration; At present, when reducing the voltage between viewing area and non-display area, need to newly increase conducting metal routing layer and electrically conductive ink, add manufacturing process steps, improve manufacture craft difficulty, meanwhile, because the conducting metal routing layer newly increased can occupy viewing area, reduce the aperture opening ratio of display, be unfavorable for the making that high-quality display is shielded.
Embodiments provide a kind of array base palte and manufacture method, display unit, in order under the condition not increasing existing technology difficulty, reduce the voltage drop between array base palte viewing area and non-display area, improve display quality.
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, and obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
The array base palte that the specific embodiment of the invention provides is introduced in detail below in conjunction with accompanying drawing.
As shown in Figure 4, the specific embodiment of the invention provides a kind of array base palte, comprise underlay substrate 10, underlay substrate 10 is divided into viewing area 41 and non-display area 42, underlay substrate 10 is provided with thin-film transistor 43, thin-film transistor 43 is provided with organic light emission confining layers 110, organic light emission confining layers 110 is provided with organic luminous layer 111, this array base palte also comprises the top electrode 112 be arranged on organic luminous layer 111, and the thickness being wherein positioned at the top electrode 112 of non-display area 42 is at least partly greater than the thickness of the top electrode 112 being positioned at viewing area 41.Top electrode in the specific embodiment of the invention as the anode of Organic Light Emitting Diode, also as the negative electrode of Organic Light Emitting Diode, namely both can can apply positive voltage to top electrode in actual process process, also can apply negative voltage to top electrode.Preferably, in the specific embodiment of the invention, the material of top electrode is the monofilm of tin indium oxide or indium zinc oxide, or is the composite membrane of tin indium oxide and indium zinc oxide.
Preferably, the specific embodiment of the invention is provided with resilient coating between underlay substrate and thin-film transistor, and the setting of resilient coating can play the effect of flat substrate substrate, the foreign atom in underlay substrate can be prevented to be diffused in thin-film transistor simultaneously.
Thin-film transistor in the specific embodiment of the invention can be the thin-film transistor of top gate structure, also can be the thin-film transistor of bottom grating structure, certainly can also be the thin-film transistor of other structure, the specific embodiment of the invention be construed as limiting the concrete structure of thin-film transistor.
Preferably, the thin-film transistor in the specific embodiment of the invention comprises: be positioned at the semiconductor active layer on underlay substrate, gate insulator, grid, insulating barrier, source electrode and drain electrode successively; Or the thin-film transistor in the specific embodiment of the invention comprises: be positioned at the grid on underlay substrate, gate insulator, semiconductor active layer, source electrode and drain electrode successively.
Particularly, as shown in Figure 4, thin-film transistor 43 in the specific embodiment of the invention comprises the semiconductor active layer 12 be positioned on underlay substrate 10, be positioned at the gate insulator 13 on semiconductor active layer 12, be positioned at the grid 14 on gate insulator 13, be positioned at the insulating barrier 15 on grid 14, be positioned at the source electrode 16 on insulating barrier 15 and drain electrode 17.The specific embodiment of the invention is when the layer contacted with organic luminous layer 111 bottom surface is as negative electrode, if the work function of source electrode 16 material is less, can directly as cathode layer, organic luminous layer 111 is directly connected with source electrode 16, at this moment do not need to make pixel electrode, make manufacture craft simpler.Organic light emission confining layers 110 in the specific embodiment of the invention plays a part to limit organic luminous layer 111 position.
Particularly, as shown in Figure 5, array base palte in the specific embodiment of the invention also comprises the pixel electrode 19 be arranged on flatness layer 18, pixel electrode 19 is connected with the source electrode 16 that thin-film transistor exposes by the via hole etched on flatness layer 18, and organic luminous layer 111 is positioned on pixel electrode 19.Organic luminous layer 111 is brought out luminous by the signal of telecommunication be applied on pixel electrode 19 and top electrode 112, in the specific embodiment of the invention when the anode of top electrode 112 as Organic Light Emitting Diode, pixel electrode 19 is as the negative electrode of Organic Light Emitting Diode, when the negative electrode of top electrode 112 as Organic Light Emitting Diode, pixel electrode 19 is as the anode of Organic Light Emitting Diode, control the voltage between pixel electrode 19 and top electrode 112 by circuit structures such as the thin-film transistors on array base palte, thus control the illumination effect of organic luminous layer 111.In the specific embodiment of the invention, the material of top electrode is the monofilm of tin indium oxide or indium zinc oxide, or be the composite membrane of tin indium oxide and indium zinc oxide, the thickness being positioned at the top electrode 112 of non-display area 42 in the specific embodiment of the invention is greater than the thickness of the top electrode 112 being positioned at viewing area 41.Therefore, the specific embodiment of the invention is by arranging top electrode 112 subregion, thinner at the thicknesses of layers of the top electrode 112 in the display transparent district contacted with organic luminous layer 111, to improve the transmitance of light; Thicker at the thicknesses of layers of the top electrode 112 of non-display area, to reduce the resistivity of top electrode, under the condition not increasing existing technology difficulty, improve display quality and product yield.
As shown in Figure 6, array base palte in the specific embodiment of the invention also comprises auxiliary electrode 60, auxiliary electrode 60 and pixel electrode 19 are positioned at same layer, auxiliary electrode 60 is positioned at the non-display area 42 of underlay substrate 10, top electrode 112 is positioned on auxiliary electrode 60 and is electrically connected with auxiliary electrode 60, and the thickness being positioned at the top electrode 112 on auxiliary electrode 60 is greater than the thickness of the top electrode 112 be positioned at above pixel electrode 19.The setting of auxiliary electrode 60 can reduce the resistivity of the top electrode 112 of non-display area further, because the thicknesses of layers of the top electrode 112 of non-display area is thicker, therefore when top electrode 112 is electrically connected with auxiliary electrode 60, be not easy to occur the top electrode crack conditions because contact hole is comparatively dark, top electrode 112 is caused, thus it is bad to reduce electrical contact, improving product yield.Certainly, auxiliary electrode 60 in the specific embodiment of the invention also can adopt design identical with metal routing layer 20 in Fig. 2, similarly, because the thicknesses of layers of the top electrode 112 of non-display area is thicker, when top electrode 112 is deposited on above thicker auxiliary electrode, be not easy to occur crack conditions in the marginal zone of auxiliary electrode, thus it is bad to reduce electrical contact.
The specific embodiment of the invention additionally provides a kind of display unit comprising above-mentioned array base palte, and described display unit can be OLED display device etc.
The specific embodiment of the invention additionally provides a kind of manufacture method of array base palte, comprise the making of thin-film transistor, the making of flatness layer, the making of organic luminous layer, the making of top electrode, the thickness being wherein positioned at the described top electrode of array base palte non-display area is at least partly greater than the thickness of the described top electrode being positioned at array base palte viewing area.
Preferably, as shown in Figure 7, the specific embodiment of the invention adopts intermediate tone mask plate or gray tone mask plate to make top electrode, specifically comprises:
S701, on organic luminous layer formed (such as adopting the mode of deposition) transparent conductive film;
S702, on described transparent conductive film formed (such as adopting the mode of coating) photoresist, undertaken exposing, developing by mask plate (such as intermediate tone mask plate or gray tone mask plate), form the photoresist complete area of coverage, photoresist part of footprint and without the photoresist area of coverage, wherein, the non-display area of the corresponding array base palte of the complete area of coverage of described photoresist, the viewing area of the corresponding array base palte in photoresist part of footprint;
S703, by etching, remove without the described transparent conductive film of the photoresist area of coverage, and remove the photoresist of photoresist part of footprint, expose the transparent conductive film of photoresist part of footprint;
S704, by etching, remove the described transparent conductive film of segment thickness exposed, form the top electrode being positioned at array base palte viewing area;
S705, removal residue photoresist, form the top electrode being positioned at array base palte non-display area, the thickness being positioned at the top electrode of described non-display area is greater than the thickness of the top electrode being positioned at described viewing area.
The manufacture method of the array base palte that the specific embodiment of the invention provides is introduced in detail below in conjunction with accompanying drawing.
As shown in Figure 8, first the specific embodiment of the invention makes resilient coating 11 on underlay substrate 10, and underlay substrate 10 can be glass substrate, also can be flexible base, board, and the concrete manufacturing process of resilient coating 11 is same as the prior art, repeats no more here.Then on resilient coating 11, semiconductor active layer 12 is made, semiconductor active layer 12 can be amorphous silicon film, also can be carry out to amorphous silicon film the polysilicon film that crystallization makes, the concrete manufacturing process of semiconductor active layer 12 be same as the prior art, repeats no more here.Then on semiconductor active layer 12, gate insulator 13 is made, gate insulator 13 can be silicon dioxide film (SiO2), silicon nitride film (SiNx), silicon oxynitride film (SiO2Nx), the concrete manufacturing process of gate insulator 13 is same as the prior art, repeats no more here.Then on gate insulator 13, grid 14 is made, grid 14 is the monofilm of the metals such as metal molybdenum (Mo), metallic aluminium (Al), metallic nickel (Ni), or for various metals composition composite membrane, the concrete manufacturing process of grid 14 is same as the prior art, repeats no more here.Then on grid 14, insulating barrier 15 is made, insulating barrier 15 can be silicon dioxide film (SiO2), silicon nitride film (SiNx), silicon oxynitride film (SiO2Nx), the concrete manufacturing process of insulating barrier 15 is same as the prior art, repeats no more here.Then on insulating barrier 15, make source electrode 16 and drain electrode 17, the concrete manufacturing process of source electrode 16 and drain electrode 17 is same as the prior art, repeats no more here.Then on source electrode 16 and drain electrode 17, make flatness layer 18, the concrete manufacturing process of flatness layer 18 is same as the prior art, repeats no more here.Then on flatness layer 18, make pixel electrode 19, the concrete manufacturing process of pixel electrode 19 is same as the prior art, repeats no more here.Then on pixel electrode 19, make organic threshold of luminescence given layer 110, the concrete manufacturing process of organic light emission confining layers 110 is same as the prior art, repeats no more here.Then in organic light emission confining layers 110, make organic luminous layer 111, the concrete manufacturing process of organic luminous layer 111 is same as the prior art, repeats no more here.Then on organic luminous layer 111, layer of transparent conductive film 80 is deposited, by forming the top electrode of the specific embodiment of the invention after carrying out patterning processes to transparent conductive film 80.
The specific embodiment of the invention is in order to reduce the resistivity of top electrode, need to make the thicker top electrode of thicknesses of layers, in order to improve the light transmittance of top electrode, need to make the thinner top electrode of thicknesses of layers, top electrode subregion, in order to reduce the resistivity of top electrode under the condition not affecting light transmittance, arranges, the display transparent district contacted with organic luminous layer by the specific embodiment of the invention, what made by the thickness of the rete of top electrode is thinner, to improve the transmitance of light; At non-display area, what made by the thickness of the rete of top electrode is thicker, to reduce the resistivity of top electrode.
Particularly, as shown in Figure 9, the specific embodiment of the invention adopts intermediate tone mask plate or adopts gray tone mask plate to make top electrode, as the specific embodiment of the invention adopts intermediate tone mask plate 91 to make top electrode, intermediate tone mask plate 91 comprises semi-opaque region 911, shading region 912 and full transparent area (not shown).During concrete enforcement, transparent conductive film 80 applies photoresist 90, undertaken exposing, developing by intermediate tone mask plate 91, form the photoresist complete area of coverage, photoresist part of footprint and without photoresist area of coverage (not shown), wherein, the non-display area 42 of the corresponding array base palte of the complete area of coverage of photoresist, the viewing area 41 of the corresponding array base palte in photoresist part of footprint, does not need without the corresponding array base palte of the photoresist area of coverage region retaining top electrode.The photoresist 90 of the specific embodiment of the invention is for positive photoresist, the photoresist of viewing area 41 correspondence carries out illumination through the semi-opaque region 911 of intermediate tone mask plate 91 and penetrates, the photoresist of non-display area 42 correspondence carries out illumination through the shading region 912 of intermediate tone mask plate 91 and penetrates, certainly, photoresist 90 in the specific embodiment of the invention also can be negative photoresist, if during negative photoresist, the full transparent area of non-display area 42 corresponding intermediate tone mask plate 91.
Then by etching, remove the transparent conductive film without the photoresist area of coverage, and remove the photoresist of photoresist part of footprint, expose the transparent conductive film of photoresist part of footprint; Then again by etching, remove the transparent conductive film of the segment thickness exposed, form the top electrode being positioned at array base palte viewing area, because the transparent conductive film of viewing area is etched away a part, therefore be positioned at the thinner thickness of the transparent conductive film of viewing area; Finally remove residue photoresist, form the top electrode being positioned at array base palte non-display area, because the transparent conductive film of non-display area is not etched, therefore the thickness being positioned at the transparent conductive film of non-display area is thicker, namely the specific embodiment of the invention makes the thickness that the top electrode obtained is positioned at non-display area and is greater than the thickness being positioned at viewing area, and the top electrode 112 that the specific embodiment of the invention is finally formed as shown in Figure 5.
In sum, a kind of array base palte that the specific embodiment of the invention provides and manufacture method, subregion setting is carried out towards the top electrode of display exiting surface by array base palte, to form the top electrode region of different-thickness, thinner at the thicknesses of layers of the top electrode in the display transparent district contacted with organic luminous layer, to improve the transmitance of light, thicker at the thicknesses of layers of the top electrode of non-display area, to reduce its resistivity, the loose contact situation with auxiliary electrode cabling contact zone can also be reduced simultaneously, under the condition not increasing existing technology difficulty, improve display quality and product yield.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. an array base palte, comprise underlay substrate, described underlay substrate comprises viewing area and non-display area, the top electrode described underlay substrate being provided with thin-film transistor, organic luminous layer and being arranged on described organic luminous layer, it is characterized in that, the thickness being wherein positioned at the described top electrode of described non-display area is at least partly greater than the thickness of the described top electrode being positioned at described viewing area.
2. array base palte according to claim 1, is characterized in that, described thin-film transistor comprises: be positioned at the semiconductor active layer on described underlay substrate, gate insulator, grid, insulating barrier, source electrode and drain electrode successively; Or,
Described thin-film transistor comprises: be positioned at the grid on described underlay substrate, gate insulator, semiconductor active layer, source electrode and drain electrode successively.
3. array base palte according to claim 2, is characterized in that, is provided with resilient coating between described underlay substrate and described thin-film transistor.
4. array base palte according to claim 3, it is characterized in that, also comprise and be arranged on flatness layer on underlay substrate and pixel electrode, described flatness layer is between described thin-film transistor and organic luminous layer, described pixel electrode is positioned on described flatness layer, and the source electrode exposed by the via hole on flatness layer and thin-film transistor or drain is connected, described organic luminous layer is positioned on described pixel electrode.
5. array base palte according to claim 4, it is characterized in that, also comprise auxiliary electrode, described auxiliary electrode is positioned at the non-display area of underlay substrate, same layer is positioned at described pixel electrode, described top electrode to be positioned on described auxiliary electrode and to be electrically connected with described auxiliary electrode, and the thickness being positioned at the top electrode on described auxiliary electrode is greater than the thickness of the top electrode be positioned at above described pixel electrode.
6. array base palte according to claim 1, is characterized in that, described in power on very anode, or described in power on very negative electrode.
7. array base palte according to claim 6, is characterized in that, the material of described top electrode is the monofilm of tin indium oxide or indium zinc oxide, or is the composite membrane of tin indium oxide and indium zinc oxide.
8. a display unit, is characterized in that, described display unit comprises the array base palte described in the arbitrary claim of claim 1-7.
9. the manufacture method of an array base palte, comprise the making of the making of thin-film transistor, the making of organic luminous layer and top electrode, it is characterized in that, in the making of described top electrode, the thickness of the described top electrode being positioned at array base palte non-display area is at least partly made to be greater than the thickness of the described top electrode being positioned at array base palte viewing area by patterning processes.
10. method according to claim 9, is characterized in that, described patterning processes adopts intermediate tone mask plate or gray tone mask plate to make described top electrode, specifically comprises:
Organic luminous layer forms transparent conductive film;
Described transparent conductive film forms photoresist, by intermediate tone mask plate or gray tone mask board to explosure, development, form the photoresist complete area of coverage, photoresist part of footprint and without the photoresist area of coverage, wherein, the non-display area of the corresponding array base palte of the complete area of coverage of described photoresist, the viewing area of the corresponding array base palte in photoresist part of footprint;
By etching, remove the described transparent conductive film without the photoresist area of coverage, and remove the photoresist of photoresist part of footprint, expose the transparent conductive film of photoresist part of footprint;
By etching, remove the described transparent conductive film of the segment thickness exposed, form the top electrode being positioned at array base palte viewing area;
Remove residue photoresist, form the top electrode being positioned at array base palte non-display area, the thickness being positioned at the top electrode of described non-display area is greater than the thickness of the top electrode being positioned at described viewing area.
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