CN104576663A - Image sensing unit and forming method thereof - Google Patents
Image sensing unit and forming method thereof Download PDFInfo
- Publication number
- CN104576663A CN104576663A CN201310505156.0A CN201310505156A CN104576663A CN 104576663 A CN104576663 A CN 104576663A CN 201310505156 A CN201310505156 A CN 201310505156A CN 104576663 A CN104576663 A CN 104576663A
- Authority
- CN
- China
- Prior art keywords
- image sensing
- pixel electrode
- layer
- groove
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention relates to an image sensing unit and a forming method thereof. The forming method of the image sensing unit comprises the following steps: providing a substrate, wherein a metal plug is formed in the substrate, and the surface of the metal plug is flush with the surface of the substrate; forming a dielectric layer covering the surface of the substrate and the surface of the metal plug; forming a mask layer with an opening on the surface of the dielectric layer, wherein the opening is positioned right above the surface of the metal plug; etching the dielectric layer along the opening and forming a groove, wherein the bottom of the groove exposes the top surface of the metal plug; removing the mask layer; forming a pixel electrode layer on the surface of the inner wall of the groove; forming an organic photoelectric conversion layer which fully fills the groove and covers the dielectric layer on the surface of the pixel electrode layer. According to the method, the performances of the image sensing unit can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of image sensing cell and forming method thereof.
Background technology
Imageing sensor, or claim photo-sensitive cell, be a kind of equipment optical imagery being converted to electronic signal, it is widely used in digital camera and other electro-optical devices.Early stage imageing sensor adopts analog signal, as camera tube (video camera tube).Nowadays, traditional imageing sensor is mainly divided into photosensitive coupling element (charge-coupled device, CCD) and CMOS (Complementary Metal Oxide Semiconductor) CMOS active pixel sensor (CMOS Active pixel sensor) two kinds.Above-mentioned imageing sensor accepts light signal mainly through silicon photoelectric diode and converts light signal to the signal of telecommunication.The volume of conventional image sensor is comparatively large, and sensitivity and all need further to be improved by optical range.
Organic imageing sensor is a kind of novel imageing sensor, and existing organic imageing sensor adopts organic photoelectric conversion layer to replace traditional silicon photoelectric diode as photoelectric conversion unit.Produce electronics after organic photoelectric conversion layer receiving optical signals, carry out electricity with the circuit of imageing sensor lower floor be connected by being positioned at the pixel electrode below organic photoelectric conversion layer, convert the electrical signal to image and export.
Organic imageing sensor not only has less volume, and improves the incidence angle of light, is conducive to the photosensitive property improving imageing sensor.And compared with traditional imageing sensor, the technological process of organic imageing sensor is more simple, can reduce production cost.
The performance of existing organic imageing sensor need further raising.
Summary of the invention
The problem that the present invention solves is to provide a kind of image sensing cell and forming method thereof, improves the performance of image sensing cell.
For solving the problem, the invention provides a kind of formation method of image sensing cell, comprising: provide substrate, be formed with metal plug in described substrate, the surface of described metal plug flushes with substrate surface; Form the dielectric layer covering described substrate surface and metal plug surface; Form the mask layer with opening at described dielectric layer surface, described opening is positioned at directly over metal plug surface; Along described opening, etch described dielectric layer, form groove, described bottom portion of groove exposes the top surface of metal plug; Remove described mask layer; Pixel electrode layer is formed on described groove inner wall surface; Formed on described pixel electrode layer surface and fill full described groove and the organic photoelectric conversion layer covering described dielectric layer.
Optionally, the width of described opening is equal to or greater than the width of described metal plug top surface.
Optionally, the material of described mask layer is photoresist.
Optionally, isotropic etching technique is adopted to etch described dielectric layer.
Optionally, described isotropic etching technique is wet-etching technology.
Optionally, described isotropic etching technique is dry etch process.
Optionally, the top width of described groove is greater than the bottom width of groove.
Optionally, the cross sectional shape of described groove is the inverted trapezoidal of sidewall slope.
Optionally, the sidewall of described groove is arc-shaped.
Optionally, the method forming described pixel electrode layer comprises: form pixel electrode material layer at described dielectric layer surface and groove inner wall surface; With described dielectric layer for stop-layer, planarization is carried out to described pixel electrode material layer, remove the partial pixel electrode material layer being positioned at described dielectric layer surface, form the pixel electrode layer being positioned at described groove inner wall surface.
Optionally, the thickness of described pixel electrode layer is 10nm ~ 300nm.
Optionally, the material of described pixel electrode layer is TiN, Ti, TaN or Ta.
Optionally, the material of described dielectric layer at least comprises SiO
2, one in SiN, SiON, SiOC, SiONC.
For solving the problem, technical scheme of the present invention also provides a kind of image sensing cell, comprising: substrate, has metal plug in described substrate, and the surface of described metal plug flushes with substrate surface; Cover the dielectric layer on described substrate surface and metal plug surface; Be positioned at the groove of described dielectric layer, described bottom portion of groove exposes the top surface of metal plug; Be positioned at the pixel electrode layer on described groove inner wall surface; Be located at described pixel electrode layer surface, fill and expire described groove and the organic photoelectric conversion layer covering described dielectric layer.
Optionally, the top width of described groove is equal to or greater than the width of metal plug top surface.
Optionally, the top width of described groove is greater than the bottom width of groove.
Optionally, the cross sectional shape of described groove is the inverted trapezoidal of sidewall slope.
Optionally, the sidewall of described groove is arc-shaped.
Optionally, the thickness of described pixel electrode layer is 10nm ~ 300nm.
Optionally, the material of described pixel electrode layer is TiN, Ti, TaN or Ta.
Compared with prior art, technical scheme of the present invention has the following advantages:
Technical scheme of the present invention, forms the groove exposing metal plug surface in substrate in the dielectric layer, form pixel electrode layer, and then described pixel electrode layer surface forms the organic photoelectric conversion layer of filling full groove on described groove inner wall surface.Described pixel electrode layer comprises the part being positioned at bottom portion of groove surface and the part being positioned at recess sidewall surface.Compared with the pixel electrode layer of existing plane, when taking same horizontal plane and being long-pending, the surface area of pixel electrode layer reality can be improved, improve described pixel electrode layer and follow-up contact area between the surperficial organic photoelectric conversion layer formed of pixel electrode layer, thus the efficiency that the electronics in raising organic photoelectric conversion layer transmits in pixel electrode, thus improve the performance of image sensing cell.
Further, the top width of described groove is greater than bottom width, is conducive to accepting incident light.Because partial pixel electrode layer is positioned at the sidewall surfaces of groove, portions incident light transmission organic photoelectric conversion layer is after a side surface of pixel electrode layer is reflected, again can run into the surface of the pixel electrode layer of opposite side, again reflected, continue to propagate in organic photoelectric conversion layer, until penetrate from organic light conversion layer.Compared with prior art, the propagation distance of incident light in organic photoelectric conversion layer can be improved, improve incident light to the launching efficiency of photoelectric conversion layer carriers, more electronic carrier is produced when same intensity of illumination, described image sensing cell is improved the susceptibility of light intensity, thus improves the performance of image sensing cell in the present embodiment.
Accompanying drawing explanation
Fig. 1 to Figure 11 is the structural representation of the forming process of the image sensing cell of embodiments of the invention.
Embodiment
As described in the background art, the performance of the organic imageing sensor formed in prior art need further raising.
Research finds, the principal element affecting the performance of organic imageing sensor is the contact area between organic photoelectric conversion layer and pixel electrode, and the contact area improved between described organic photoelectric conversion layer and pixel electrode can improve the capacity gauge of pixel electrode for the electric charge in organic photoelectric conversion layer.When not increasing pixel electrode volume, improving the contact area of pixel electrode and organic photoelectric conversion layer, is the effective ways improving organic image sensor performance.Another key factor is the length of the propagation path of light in photoelectric conversion layer, improve the propagation path of incident light in photoelectric conversion layer, can be that incident light inspires more electronics in photoelectric conversion layer, improve the susceptibility of organic photoelectric conversion layer meeting light.
Embodiments of the invention, a kind of image sensing cell is provided, the pixel electrode layer of described image sensing cell forms groove inner wall surface in the dielectric layer, the contact area of pixel electrode layer and organic photoelectric conversion layer can be improved and the reflection can carrying out repeatedly to incident light, thus improve the performance of image sensing cell.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Please refer to Fig. 1, provide substrate 100, form all metal plugs 101 in described substrate 100, described metal plug 101 surface flushes with substrate 100 surface.
The material of described substrate 100 is dielectric material, can be SiO
2, one or more in SiN, SiON, SiOC, SiONC.
Described substrate 100, as interlayer dielectric layer, is formed at other dielectric layers or semiconductor substrate surface.Other metal interconnect structures can also be formed with in described substrate, below described substrate, also be formed with the devices such as transistor.
The material of described metal plug 101 is W or Cu, and described metal plug 101 is for connecting the follow-up pixel electrode formed on its surface.Described metal plug 101 lower end can be connected with other metal interconnect structures or device.
Please refer to Fig. 2, form dielectric layer 200 on described substrate 100 surface, described dielectric layer 200 covers the surface of substrate 100 and metal plug 101.
Described dielectric layer 200 can adopt chemical vapor deposition method to be formed, and the material of described dielectric layer 200 at least comprises SiO
2, one in SiN, SiON, SiOC, SiONC.Described dielectric layer 200 is as substrate 100 and follow-up isolation structure between the surperficial organic photoelectric conversion layer formed of dielectric layer 200.
The thickness of described dielectric layer 200 is 20nm ~ 2000nm.
In the present embodiment, the material of described dielectric layer 200 is silica, adopts chemical vapor deposition method to form described dielectric layer 200.
Please refer to Fig. 3, form the mask layer 300 with opening 301 on described dielectric layer 200 surface.
Described opening 201 is positioned at directly over metal plug, and the width of described opening 201 is equal to or greater than the width of metal plug 101, be convenient to follow-up after etching described dielectric layer 200 along described opening 301, fully can expose the surface of described metal plug 101, reduce described metal plug 101 and follow-up contact resistance between the surperficial pixel electrode formed of described metal plug 101.
In the present embodiment, the material of described mask layer 300 is photoresist.Adopt spin coating proceeding after described dielectric layer 200 surface forms photoresist layer, exposure imaging is carried out to described photoresist layer, forms opening 301 and mask layer 300.
In other embodiments of the invention, the material of described mask layer 300 is the dielectric material different from dielectric layer material, can be silica, silicon nitride etc.After dielectric layer 200 surface forms described mask layer, at described mask layer image forming surface photoresist layer, with described image conversion photoresist layer for mask, etch described mask layer, form opening and mask layer.
Please refer to Fig. 4, etch described dielectric layer 200 along described opening 301, form groove 201.
The method of described etch media layer 200 is isotropic etching technique, groove 201 is formed in described dielectric layer 200, described groove 201 part is positioned at below the mask layer 300 of opening both sides, and described groove 201 bottom-exposed go out the top surface of metal plug 101.
In the present embodiment, the material of described dielectric layer 200 is silica, described isotropic etching method adopts wet-etching technology, etching solution is HF solution, described etching solution carries out the etching of vertical and horizontal to described dielectric layer 200 along opening 301, form the groove 201 that sidewall is arc, and the top width of described groove is greater than the width of opening 301, makes part recess 201 be positioned at the below of described mask layer 300.Described groove 201 top width is greater than the bottom width of groove 201.Follow-up at described groove 201 inner wall surface formation pixel electrode layer, compared with smooth pixel electrode layer, described pixel electrode layer is formed on described groove inner wall surface, when taking same horizontal plane and being long-pending, the surface area of pixel electrode layer reality can be improved, improve described pixel electrode layer and follow-up contact area between the surperficial organic photoelectric conversion layer formed of pixel electrode layer, thus the efficiency that the electronics in raising organic photoelectric conversion layer transmits in pixel electrode, thus improve the performance of image sensing cell.
In other embodiments of the invention, can also adopt the dry etch process of isotropic etching, form the groove of sidewall slope, described groove part is positioned at below mask layer, and the top width of groove is greater than the bottom width of groove.
Please refer to Fig. 5, form pixel electrode material layer 202 in described groove 201 inner wall surface and dielectric layer 200 surface.
The material of described pixel electrode material layer 202 is metal material, at least comprises the one in TiN, Ti, TaN and Ta.Chemical vapor deposition method can be adopted to form described pixel electrode material layer 202.
In the present embodiment, the material of described pixel electrode material layer 202 is TiN, and thickness is 10nm ~ 300nm, adopts chemical vapor deposition method to be formed.Concrete, the deposition gases that described chemical vapor deposition method adopts is TiCl
4and NH
3, wherein, TiCl
4flow be 10sccm ~ 1000sccm, NH
3flow be 10sccm ~ 1000sccm, reaction temperature is 250 DEG C ~ 400 DEG C, and the reaction time is 10s ~ 300s.
In other embodiments of the invention, other suitable methods such as ald or physical gas-phase deposition can also be adopted to form described pixel electrode material layer 202.
Please refer to Fig. 6, with described dielectric layer 200 for stop-layer, Fig. 5 be please refer to described pixel electrode material layer 202() carry out planarization, remove the partial pixel electrode material layer 202(being positioned at dielectric layer 200 surface and please refer to Fig. 5), be positioned at the partial pixel electrode material of described groove 201 inner wall surface as pixel electrode 212.
Adopt chemical mechanical milling tech, Fig. 5 be please refer to described pixel electrode material layer 202() carry out planarization.Form pixel electrode layer 212, be positioned at the inner wall surface of groove 201, described pixel electrode layer 212 covers bottom portion of groove surface and sidewall surfaces, so, the surface area of pixel electrode layer can be improved.
Please refer to Fig. 7, form organic photoelectric conversion layer 400 on described pixel electrode layer 212 surface and dielectric layer 200 surface.
Described organic photoelectric conversion layer 400 surface is smooth and the full described groove 201(of filling please refer to Fig. 6).
In the present embodiment, adopt spin coating proceeding, form organic photoelectric conversion layer 400 on described pixel electrode 212 surface.
The material of described organic photoelectric conversion layer 400 is the organic material with higher photoelectric conversion efficiency.Under illumination effect, more electronic carrier can be produced in described organic photoelectric conversion layer 400, thus convert light signal to the signal of telecommunication.The organic light-guide electric materials such as the material of described organic photoelectric conversion layer 400 can be conjugate polymer material, the macromolecule containing special metal complex structure, the polymer containing large aromatic heterocycle structure.Described organic photoelectric conversion layer 400 adopts spin coating proceeding to be formed, and can be the structure of individual layer or multilayer.
In the present embodiment, described organic photoelectric conversion layer 400 is multilayer lamination structure, comprise: the oxine aluminium lamination of poly-hydroxyphenyl silane (PHPPS) layer of doping coumarin 6 (C6), Polymethylphenylsilane (PMPS) layer of doping rhodamine 6G (R6G), doping Phthalocyanine Zinc (ZnPc), trilaminate material is stacking forms described organic photoelectric conversion layer 400.In other embodiments of the invention, the material of described organic photoelectric conversion layer 130 also can be other suitable organic materials.
Because described pixel electrode layer 212 covers sidewall and the lower surface of groove, described organic photoelectric conversion layer 400 comprises the partial pixel electrode layer 212 being positioned at bottom portion of groove surface in horizontal direction and the partial pixel electrode layer 212 in vertical direction with the contact surface of pixel electrode layer 212.With prior art, the pixel electrode layer surface smooth on surface forms organic photoelectric conversion layer and compares, on same horizontal plane area, contact area between organic photoelectric conversion layer and pixel electrode layer 212 is larger, improve the efficiency that in organic photoelectric conversion layer 130, electronics transmits in pixel electrode 120, thus the performance of the organic imageing sensor formed on described image sensing cell basis can be improved.
Please refer to Fig. 8, is the route map that incident light is propagated in described image sensing cell.
After incident ray is through described organic photoelectric conversion layer 400, can reflect on pixel electrode layer 212 surface, continue to propagate in organic photoelectric conversion layer 400.
In prior art, pixel electrode layer is smooth surface, and incident light will directly penetrate after being subject to pixel electrode layer reflection from organic photoelectric conversion layer.
And in the present embodiment, because described pixel electrode layer 212 part is positioned at the sidewall surfaces of groove, portions incident light transmission organic photoelectric conversion layer is after a side surface of pixel electrode layer 212 is reflected, again can run into the surface of the pixel electrode layer 212 of opposite side, again reflected, propagate in organic photoelectric conversion layer 400 again, until penetrate from organic light conversion layer.Compared with prior art, the propagation distance of incident light in organic photoelectric conversion layer 400 can be improved, described photoelectric conversion layer is constantly excited to produce electronics, thus improve incident light to the launching efficiency of photoelectric conversion layer 400 carriers, more electronic carrier is produced when same intensity of illumination, described image sensing cell is improved the susceptibility of light intensity, thus improves the performance of image sensing cell in the present embodiment.
In other embodiments of the invention, described pixel electrode layer can also be other shapes.
Please refer to Fig. 9 and Figure 10, etch described dielectric layer 200, formed groove 211(please refer to Fig. 9) or groove 221(please refer to Figure 10), the cross section of described groove 211 or groove 221 is up-narrow and down-wide inverted ladder type, and the sidewall slope of groove 211 is less than the sidewall slope of groove 211; Then the method in the present embodiment is adopted, at the groove 211 of described sidewall slope or formation pixel electrode layer 222 corresponding to groove 221 inner wall surface or pixel electrode layer 232.
Please refer to Figure 11, in other embodiments of the invention, can also etch described dielectric layer 200 and form groove 231, the cross section of described groove 231 can be oval, the width of described groove middle height is maximum, and the width of groove top and bottom is less than the Breadth Maximum of groove.Adopt the method in the present embodiment, form pixel electrode material layer 242 in described groove 231 inner wall surface.
Described groove can adopt isotropic etching technics such as dry etching or wet etching to be formed, by adjusting the parameter of etching technics, and the shape of the groove that adjustment is formed.
The degree of depth etching the groove that described dielectric layer is formed is larger, and the follow-up reflex to incident light is larger.
The present embodiment additionally provides a kind of image sensing cell adopting said method to be formed.
Please refer to Fig. 7, is the structural representation of image sensing cell.
Described image sensing cell comprises: substrate 100, has metal plug 101 in described substrate 100, and the surface of described metal plug 101 flushes with substrate 100 surface; Cover the dielectric layer 200 on described substrate 100 surface and metal plug 101 surface; Be positioned at the groove of described dielectric layer 200, described bottom portion of groove exposes the top surface of metal plug 101; Be positioned at the pixel electrode layer 212 on described groove inner wall surface; Be located at described pixel electrode layer 212 surface, fill and expire described groove and the organic photoelectric conversion layer 400 covering described dielectric layer 200.
The bottom width of described groove is equal to or greater than the width of metal plug 101 top surface.
The top width of described groove is greater than the bottom width of groove.In the present embodiment, the sidewall of described groove is arc-shaped.In other embodiments of the invention, the cross sectional shape of described groove is the inverted trapezoidal of sidewall slope.
The thickness of described pixel electrode layer 212 is 10nm ~ 300nm.
The material of described pixel electrode layer 212 is TiN, Ti, TaN or Ta.
Compared with prior art, pixel electrode layer in the present embodiment covers sidewall and the surface of groove, improve the contact area between pixel electrode layer and organic photoelectric conversion layer, thus the efficiency that the electronics in raising organic photoelectric conversion layer transmits in pixel electrode, thus improve the performance of image sensing cell.
And, described pixel electrode layer, multiple reflections can be carried out to incident ray, thus improve the propagation distance of incident light in organic photoelectric conversion layer, improve incident light to the launching efficiency of photoelectric conversion layer carriers, produce more electronic carrier when same intensity of illumination, described image sensing cell is improved the susceptibility of light intensity, thus improve the performance of image sensing cell in the present embodiment.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (20)
1. a formation method for image sensing cell, is characterized in that, comprising:
There is provided substrate, be formed with metal plug in described substrate, the surface of described metal plug flushes with substrate surface;
Form the dielectric layer covering described substrate surface and metal plug surface;
Form the mask layer with opening at described dielectric layer surface, described opening is positioned at directly over metal plug surface;
Along described opening, etch described dielectric layer, form groove, described bottom portion of groove exposes the top surface of metal plug;
Remove described mask layer;
Pixel electrode layer is formed on described groove inner wall surface;
Formed on described pixel electrode layer surface and fill full described groove and the organic photoelectric conversion layer covering described dielectric layer.
2. the formation method of image sensing cell according to claim 1, is characterized in that, the width of described opening is equal to or greater than the width of described metal plug top surface.
3. the formation method of image sensing cell according to claim 1, is characterized in that, the material of described mask layer is photoresist.
4. the formation method of image sensing cell according to claim 1, is characterized in that, adopts isotropic etching technique to etch described dielectric layer.
5. the formation method of image sensing cell according to claim 3, is characterized in that, described isotropic etching technique is wet-etching technology.
6. the formation method of image sensing cell according to claim 3, is characterized in that, described isotropic etching technique is dry etch process.
7. the formation method of image sensing cell according to claim 1, is characterized in that, the top width of described groove is greater than the bottom width of groove.
8. the formation method of image sensing cell according to claim 7, is characterized in that, the cross sectional shape of described groove is the inverted trapezoidal of sidewall slope.
9. the formation method of image sensing cell according to claim 7, is characterized in that, the sidewall of described groove is arc-shaped.
10. the formation method of image sensing cell according to claim 1, is characterized in that, the method forming described pixel electrode layer comprises: form pixel electrode material layer at described dielectric layer surface and groove inner wall surface; With described dielectric layer for stop-layer, planarization is carried out to described pixel electrode material layer, remove the partial pixel electrode material layer being positioned at described dielectric layer surface, form the pixel electrode layer being positioned at described groove inner wall surface.
The formation method of 11. image sensing cells according to claim 1, is characterized in that, the thickness of described pixel electrode layer is 10nm ~ 300nm.
The formation method of 12. image sensing cells according to claim 1, is characterized in that, the material of described pixel electrode layer is TiN, Ti, TaN or Ta.
The formation method of 13. image sensing cells according to claim 1, is characterized in that, the material of described dielectric layer at least comprises SiO
2, one in SiN, SiON, SiOC, SiONC.
14. 1 kinds of image sensing cells, is characterized in that, comprising:
Substrate, has metal plug in described substrate, and the surface of described metal plug flushes with substrate surface;
Cover the dielectric layer on described substrate surface and metal plug surface;
Be positioned at the groove of described dielectric layer, described bottom portion of groove exposes the top surface of metal plug;
Be positioned at the pixel electrode layer on described groove inner wall surface;
Be located at described pixel electrode layer surface, fill and expire described groove and the organic photoelectric conversion layer covering described dielectric layer.
15. image sensing cells according to claim 14, is characterized in that, the bottom width of described groove is equal to or greater than the width of metal plug top surface.
16. image sensing cells according to claim 14, is characterized in that, the top width of described groove is greater than the bottom width of groove.
17. image sensing cells according to claim 16, is characterized in that, the cross sectional shape of described groove is the inverted trapezoidal that the top width of sidewall slope is greater than bottom width.
18. image sensing cells according to claim 16, is characterized in that, the sidewall of described groove is arc-shaped.
19. image sensing cells according to claim 14, is characterized in that, the thickness of described pixel electrode layer is 10nm ~ 300nm.
20. image sensing cells according to claim 14, is characterized in that, the material of described pixel electrode layer is TiN, Ti, TaN or Ta.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310505156.0A CN104576663B (en) | 2013-10-23 | 2013-10-23 | Image sensing cell and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310505156.0A CN104576663B (en) | 2013-10-23 | 2013-10-23 | Image sensing cell and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576663A true CN104576663A (en) | 2015-04-29 |
| CN104576663B CN104576663B (en) | 2017-09-22 |
Family
ID=53092337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310505156.0A Active CN104576663B (en) | 2013-10-23 | 2013-10-23 | Image sensing cell and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576663B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029417A (en) * | 2019-12-02 | 2020-04-17 | 上海集成电路研发中心有限公司 | Photoelectric detector and preparation method thereof |
| CN113471230A (en) * | 2020-03-31 | 2021-10-01 | 意法半导体(克洛尔2)公司 | Pixel of light sensor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6373117B1 (en) * | 1999-05-03 | 2002-04-16 | Agilent Technologies, Inc. | Stacked multiple photosensor structure including independent electrical connections to each photosensor |
| US20030209736A1 (en) * | 2000-03-07 | 2003-11-13 | Sharp Kabushiki Kaisha | Image sensor and method of manufacturing the same |
| CN102005463A (en) * | 2009-09-01 | 2011-04-06 | 富士胶片株式会社 | Image pickup device and image pickup apparatus |
-
2013
- 2013-10-23 CN CN201310505156.0A patent/CN104576663B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6373117B1 (en) * | 1999-05-03 | 2002-04-16 | Agilent Technologies, Inc. | Stacked multiple photosensor structure including independent electrical connections to each photosensor |
| US20030209736A1 (en) * | 2000-03-07 | 2003-11-13 | Sharp Kabushiki Kaisha | Image sensor and method of manufacturing the same |
| CN102005463A (en) * | 2009-09-01 | 2011-04-06 | 富士胶片株式会社 | Image pickup device and image pickup apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029417A (en) * | 2019-12-02 | 2020-04-17 | 上海集成电路研发中心有限公司 | Photoelectric detector and preparation method thereof |
| CN113471230A (en) * | 2020-03-31 | 2021-10-01 | 意法半导体(克洛尔2)公司 | Pixel of light sensor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576663B (en) | 2017-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10998364B2 (en) | Image sensor scheme for optical and electrical improvement | |
| US10020338B2 (en) | Backside illuminated image sensor | |
| US9859323B1 (en) | Complementary metal-oxide-semiconductor (CMOS) image sensor | |
| EP3179512B1 (en) | Cmos image sensor and fabrication method thereof | |
| TWI447903B (en) | Method for manufaturing light pipe | |
| US20100203665A1 (en) | Methods of manufacturing an image sensor having an air gap | |
| KR100935771B1 (en) | Image Sensor and Method for Manufacturing Thereof | |
| US11251229B2 (en) | Method of manufacturing an image sensor having an etch stop layer on an insulation layer | |
| TWI572024B (en) | Semiconductor device and method of manufacturing the same | |
| CN109560096B (en) | Image sensor and forming method thereof | |
| TWI757894B (en) | Image sensor and method of forming the same | |
| CN103413818A (en) | Image sensor and manufacturing method of image sensor | |
| TW202008573A (en) | A capping structure to reduce dark current in image sensors | |
| CN108364965A (en) | Imaging sensor and forming method thereof | |
| CN104576663B (en) | Image sensing cell and forming method thereof | |
| CN102024755B (en) | Cmos image sensor and forming method thereof | |
| JP6254829B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| CN102034756B (en) | Interconnection packaging method of image sensor | |
| KR20090046170A (en) | Image sensor and method for manufacturing thereof | |
| CN106910754B (en) | Semiconductor device and method for manufacturing the same | |
| CN109273467A (en) | Back side illumination image sensor and its manufacturing method | |
| CN203179889U (en) | Cmos image sensor | |
| CN103700648B (en) | Metal interconnection structure and preparation method for high temperature circuit | |
| CN102543852B (en) | Metal interconnection structure and manufacturing method thereof | |
| JP2019160858A (en) | Solid state imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |