CN104576442A - Ceramic heating device used for semiconductor manufacturing device - Google Patents
Ceramic heating device used for semiconductor manufacturing device Download PDFInfo
- Publication number
- CN104576442A CN104576442A CN201410039786.8A CN201410039786A CN104576442A CN 104576442 A CN104576442 A CN 104576442A CN 201410039786 A CN201410039786 A CN 201410039786A CN 104576442 A CN104576442 A CN 104576442A
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- ceramic heater
- heater
- semiconductor manufacturing
- mounting surface
- lifter pin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a ceramic heating device used for a semiconductor manufacturing device. The ceramic heating device can correspond to numbers of elevating pins and types of device in different positions. The ceramic heating device (11) is provided with a chip loading/arranging face. The interior of the ceramic heating device (11) is provided with heating bodies (13) which are formed by circuit-patterned wires in shape of concentric circles, eddies, or circular arcs. In the curved wires, forming the circuit pattern, whose phase distances pass the center of the chip loading/arranging face and in the wires whose central line preset distances are perpendicular to the chip loading/arranging face, circular arc-shaped structures are formed in at least six positions in a bent manner in a way of being provided with small radius of curvature locally. When the semiconductor manufacturing device is applied, through holes are arranged in three or four positions of the six positions. Elevating pins (4) are installed in the through holes.
Description
Technical field
The present invention relates to the ceramic heater with wafer mounting surface that semiconductor-fabricating device uses, particularly relate to the ceramic heater possessing and wafer is positioned over the lifter pin that the wafer being positioned over wafer mounting surface maybe lifts by wafer mounting surface.
Background technology
In the semiconductor-fabricating device manufacturing the semiconductor equipments such as LSI (large-scale integration, large scale integrated circuit), be used in upper surface there is the wafer mounting surface the ceramic heater being provided with resistance heater in inside of placing wafer.In this ceramic heater, be provided with lifter pin, described lifter pin is used for wafer before treatment being positioned over wafer mounting surface or being lifted from wafer mounting surface by the wafer be disposed.
Lifter pin such as Patent Document 1, is arranged from the mode that the through hole at wafer mounting surface opening is come in and gone out with vertically through ceramic heater.When wafer being positioned over wafer mounting surface, such as, by the mechanical arm with handle sturcture, wafer is placed into the leading section of the lifter pin given prominence to from wafer mounting surface.In this condition, lifter pin declines and keeps out of the way in through hole, thus wafer is positioned over wafer mounting surface.On the other hand, when lifting wafer from wafer mounting surface, carrying out action contrary to the above, utilizing after wafer lifts by the leading section of lifter pin given prominence to from through hole, utilizing the handle sturcture of mechanical arm to hold wafer and it to be transported in cavity.
The quantity great majority of lifter pin are 3, according to the difference of the type of ceramic heater, also there is the situation arranging the lifter pin of more than 4.Multiple peristomes that these many lifter pins equally spaced configure usually respectively from the circle at the spaced on center preset distance apart from wafer mounting surface are come in and gone out, but, also there is the situation that angle position on the distance at the center apart from above-mentioned wafer mounting surface, circle is different in the difference of the type according to ceramic heater.
Patent documentation 1: Japanese Unexamined Patent Publication 2005-033082 publication
Because the wafer be positioned in wafer mounting surface needs to heat roughly equably on whole, the resistance heater being therefore preferably disposed on the inside of heater is surrounded with circuit on roughly whole of face of being parallel to wafer mounting surface.But as mentioned above, ceramic heater is provided with along its thickness direction the through hole of lifter pin, therefore resistance heater must be avoided the through hole of lifter pin and arrange.Therefore, if the radical of lifter pin, different from the position that wafer mounting surface is come in and gone out, then the circuit pattern correspondingly designing resistance heater is needed.Particularly, if the type of semiconductor-fabricating device is different, then the radical of usual lifter pin, the discrepancy position difference in wafer mounting surface, therefore need the ceramic heater preparing to have the respective circuit pattern corresponding with each type.
In addition, in recent years, while the heavy caliber of wafer, also there is the tendency improving fine circuits, also require the maximization of ceramic heater and high evenly heating thereupon.Therefore, if the radical of lifter pin, its position difference, then must design respective circuit pattern respectively and manufacture special ceramic heater, being more and more difficult to general ceramic heater to be applied on different types of machines.
Summary of the invention
And then, in order to prevent the breakage of ceramic heater, the stock of ceramic heater must be prepared according to each type.So, there is the problem of the Expenses Cost such as design, stock of ceramic heater in prior art.The present invention completes in order to the problem solving above-mentioned existing ceramic heater, and its object is to provides a kind of use in semiconductor manufacturing apparatus ceramic heater, and multiple types that can be different from the radical of lifter pin, position are corresponding.
In order to achieve the above object, use in semiconductor manufacturing apparatus ceramic heater of the present invention has wafer mounting surface, in inside, there is heater, the feature of this use in semiconductor manufacturing apparatus ceramic heater is, above-mentioned heater by having in concentric circles, the wire of the circuit pattern of swirl shape or arc-shaped formed, form in multiple curve-like wires of foregoing circuit pattern at a distance of through the center of wafer mounting surface and the wire of the center line preset distance vertical with wafer mounting surface sentence the mode partly with small curvature radius at least six and bend to arc-shaped.
According to the present invention, can provide there is multiple lifter pin radical, configuration pattern multiple types can be general general ceramic heater.Therefore, it is possible to reduce heater pattern design cost, and can by stock's generalization for multiple different types of semiconductor-fabricating device, therefore, it is possible to cutting down cost significantly.
Accompanying drawing explanation
Fig. 1 is the schematic vertical view that the ceramic heater of circuit pattern by having existing heater and the position of lifter pin represent in the lump.
Fig. 2 is the schematic vertical view represented in the lump with the position of lifter pin of the type being different from Fig. 1 by the ceramic heater of Fig. 1.
Fig. 3 is the schematic vertical view that the ceramic heater of other circuit patterns by having existing heater and the position of lifter pin represent in the lump.
Fig. 4 is the schematic vertical view that the ceramic heater of the circuit pattern of heater by having a concrete example of the present invention represents in the lump with the position of the lifter pin supposing the multiple types used.
Fig. 5 is the schematic vertical view ceramic heater of other circuit pattern and the position of lifter pin with existing heater represented in the lump.
Fig. 6 is the schematic vertical view that the ceramic heater of the circuit pattern of heater by having other concrete examples of the present invention represents in the lump with the position of the lifter pin supposing the multiple types used.
Fig. 7 is the schematic vertical view that the ceramic heater of the circuit pattern of heater by having other concrete example of the present invention represents in the lump with the position of the lifter pin supposing the multiple types used.
Fig. 8 is the schematic vertical view that the ceramic heater of the circuit pattern of heater by having other concrete example of the present invention represents in the lump with the position of the lifter pin supposing the multiple types used.
Fig. 9 is the ceramic heater of a concrete example of the present invention and the schematic stereogram of cylindrical support body that supports from the back side.
Embodiment
First list embodiments of the present invention to be described.Use in semiconductor manufacturing apparatus ceramic heater of the present invention has wafer mounting surface, in inside, there is heater, wherein, above-mentioned heater by having in concentric circles, the wire of the circuit pattern of swirl shape or arc-shaped formed, form in multiple curve-like wires of foregoing circuit pattern at a distance of through the center of wafer mounting surface and the wire of the center line preset distance vertical with wafer mounting surface sentence the mode partly with small curvature radius at least six and bend to arc-shaped (being called circular arc like curvature).In addition, refer at this said small curvature radius, and radius of curvature little compared with the radius of curvature that has of the curve-like wire beyond the circular arc like curvature adjacent with circular arc like curvature.Thereby, it is possible to provide a kind of use in semiconductor manufacturing apparatus ceramic heater corresponding to multiple types that can be different from the radical of lifter pin, position.
In addition, in the use in semiconductor manufacturing apparatus ceramic heater of the invention described above, bend in the part of arc-shaped at above-mentioned at least six places, at least in the inner side bending to the part of arc-shaped at three places, through hole is set respectively.In addition, in above-mentioned through hole, lifter pin can be installed.Thereby, it is possible to there is versatility to the various semiconductor-fabricating devices that the radical of lifter pin is at least 3.In addition, also can above-mentioned use in semiconductor manufacturing apparatus ceramic heater with the cylindrical support body face of wafer mounting surface opposition side engaged for supporting this ceramic heater.Thereby, it is possible to the contact conductor of protection heater is from the corrosion of corrosive environment.
In the present invention, for radical, the mutually different multiple semiconductor-fabricating device in configuration position of lifter pin, the resistance heater with unitized circuit pattern is embedded in ceramic matrix.Further, corresponding to needing the device of ceramic heater individually to bore a hole lifter pin through hole.So, the design of the ceramic heater in the past repeated is unitized, and without the need to pressing type inventory in custody again.That is, can to the general ceramic heater of multiple type, therefore, it is possible to cutting down cost significantly.
The words illustrated, such as, in the circuit pattern of the resistance heater 3 buried underground in the ceramic matrix 2 of existing discoideus ceramic heater 1 as shown in Figure 1, predetermined PCD (Pitch Circle Diameter, pitch diameter) position is equally spaced formed the through hole of 3 lifter pins 4.Therefore, the wire being positioned at resistance heater 3 herein reduces radius of curvature partly and to outer rim lateral bend near three place's through holes of these lifter pins 4.
Thus, even if the through hole of lifter pin 4 of boring a hole after resistance heater 3 is embedded in ceramic matrix 2, the wire of resistance heater 3 also can not expose from this through hole.
Such as, but in the circuit pattern of above-mentioned Fig. 1, as shown in Figure 2, when the position of lifter pin 4 is contrary up and down with Fig. 1 on paper, the through hole of lifter pin 4 and the wire of resistance heater 3 disturb, and therefore wire can expose from this through hole.In addition, in semiconductor-fabricating device, because manufacturing condition is kept certain by needs, the position of lifter pin is therefore coordinated also to be difficult to change the installation direction of ceramic heater (circuit pattern).Therefore, needed the ceramic heater that individually Design and manufacture is corresponding with the position of the lifter pin determined by type in the past.That is, ceramic heater 1 as shown in Figure 1 and the ceramic heater 5 shown in Fig. 3 such, need the ceramic heater preparing respectively there are two kinds of circuit patterns.
On the other hand, ceramic heater 11 is as shown in Figure 4 such, form be embedded in multiple curve-like wires of the resistance heater 13 of ceramic matrix 12 at a distance of through wafer mounting surface center and in the wire of the center line preset distance vertical with wafer mounting surface (i.e. a half-distance of the PCD of lifter pin), at six places that the position of the lifter pin of the semiconductor-fabricating device with multiple types that supposition uses is corresponding, bend to arc-shaped in the mode partly with small curvature radius respectively.Above-mentioned six place's circular arc like curvature are equally spaced arranged in wafer mounting surface on predetermined PCD.Thus, utilize the circuit pattern of shown in Fig. 4 can to bore a hole the through hole of lifter pin 4 that all can be corresponding with the situation of the lifter pin of Fig. 1 and Fig. 2, unitized ceramic heater can be provided thus.
That is, manufacture in advance there is the ceramic heater 11 of the circuit pattern shown in Fig. 4, need can be corresponding with the lifter pin of Fig. 1 ceramic heater time, the lifter pin through hole of the position of Fig. 1 that the ceramic heater 11 of Fig. 4 is bored a hole.Similarly, need can be corresponding with the lifter pin of Fig. 2 ceramic heater time, the lifter pin through hole of the position of Fig. 2 that the ceramic heater 11 of Fig. 4 is bored a hole.So, with in the past like that compared with the respective ceramic heater of design drawing 1 and Fig. 2 the situation keeping the stock of both sides, according to the ceramic heater of Fig. 4, then design cost roughly can be reduced by half, stock also can generalization, can significantly cutting down cost.
In addition, as other situations, ceramic heater 6 is as shown in Figure 5 such, when compared to Figure 1 the position of lifter pin 4 is present in outer edge side, needs to manufacture separately the ceramic heater 6 with the circuit pattern shown in Fig. 5 in the past.On the other hand, ceramic heater 21 is as shown in Figure 6 such, form be embedded in multiple curve-like wires of the resistance heater of ceramic matrix at a distance of through the center of wafer mounting surface and in the wire of the center line preset distance vertical with wafer mounting surface (in this case for inner side and corresponding respectively first and second distance of outer edge side), at nine places that the position of the lifter pin of the semiconductor-fabricating device with multiple types that supposition uses is corresponding, bend to arc-shaped in the mode partly with small curvature radius respectively.In above-mentioned nine place's circular arc like curvature, six place's circular arc like curvature of inner side from through the center of wafer mounting surface and the center line vertical with wafer mounting surface separate the first distance circle on equally spaced arrange.Three place's circular arc like curvature of outer edge side are arranged at and separate the circle of second distance from above-mentioned center line.Thus, by the circuit pattern adopting the ceramic heater 21 shown in Fig. 6 such, can be corresponding with the position of all lifter pins 4 of Fig. 1, Fig. 3 and Fig. 5, therefore, it is possible to by the designed tide level of ceramic heater roughly 1/3, and stock's generalization can be made.Certainly, also can design the ceramic heater with the general circuit pattern of Fig. 1 and Fig. 5 or Fig. 3 and Fig. 5, make its generalization respectively.
In the above description, the situation that lifter pin is 3 is described, also can carry out same design when lifter pin is 4.Such as, ceramic heater 31 is as shown in Figure 7 such, form be embedded in multiple curve-like wires of the resistance heater of ceramic matrix at a distance of through wafer mounting surface center and in the wire of the center line preset distance vertical with wafer mounting surface (i.e. a half-distance of the PCD of lifter pin), at eight places that the position of the lifter pin of the semiconductor-fabricating device with multiple types that supposition uses is corresponding, bend to arc-shaped in the mode partly with small curvature radius respectively.Thus, according to the circuit pattern that the ceramic heater 31 shown in Fig. 7 is such, then can provide a kind of can be configured to paper lengthwise rectangle 4 lifter pin 4A position and be configured to ceramic heater corresponding to the position both sides of 4 lifter pin 4B of the rectangle that paper is grown crosswise.
In addition, also can by the ceramic heater generalization of the ceramic heater of 3 lifter pins and 4 lifter pins.Such as, ceramic heater 41 is as shown in Figure 8 such, form be embedded in multiple curve-like wires of the resistance heater of ceramic matrix at a distance of through wafer mounting surface center and in the wire of the center line preset distance vertical with wafer mounting surface (i.e. a half-distance of the PCD of lifter pin), at seven places that the position of the lifter pin of the semiconductor-fabricating device with multiple types that supposition uses is corresponding, bend to arc-shaped in the mode partly with small curvature radius respectively.Thus, according to the circuit pattern that the ceramic heater 41 shown in Fig. 8 is such, then can provide a kind of ceramic heater that can be corresponding with the position both sides of the position of 4 lifter pin 4A and 3 lifter pin 4C.
In addition, in the various circuit patterns of above-mentioned heater, multiple curve-like wire configures symmetrically relative to the straight line line at the center through wafer mounting surface, and entirety is formed as circular shape, but the circuit pattern of heater is not limited thereto, also can be concentric circles or swirl shape.
In this case similarly, on the position corresponding with the lifter pin of unitized semiconductor-fabricating device, conductive line bends is made to become arc-shaped in the mode partly with small curvature radius.Such as, the through hole of lifter pin is arranged on predetermined PCD usually in wafer mounting surface, and therefore circular arc like curvature is configured on the position corresponding with the above-mentioned through hole on above-mentioned predetermined PCD similarly.
In addition, when making wire bend to arc-shaped with small curvature radius partly, its outer edge side towards ceramic heater both can be made to bend, it also can be made to bend towards central side.In the circuit pattern of Fig. 8, make it bend towards outer edge side in the position of lifter pin 4A, make in the position of lifter pin 4C it bend towards central side.
As mentioned above, the radical of usual lifter pin is 3, therefore in order to corresponding with the type of multiple semiconductor-fabricating device, needs the bend (circular arc like curvature) that the radius of curvature of the above-mentioned local forming at least six places is little.That is, during actual use, three places' perforation through holes only in the circular arc like curvature at least six places, install lifter pin in the through hole at this three place.In addition, the radius of curvature of certain above-mentioned circular arc like curvature is formed as larger than the diameter of the through hole of boring a hole for lifter pin.
Material for the ceramic matrix forming ceramic heater of the present invention is not particularly limited, and can use the potteries such as aluminium nitride, aluminium oxide, silicon nitride, carborundum, boron nitride.In these potteries, preferred thermal conductivity is higher, aluminium nitride to the excellent corrosion resistance of corrosive gas.
In addition, preferably consider that the thermal coefficient of expansion, sintering temperature etc. of the matrix made with pottery select the material of the heater be embedded in ceramic matrix.Such as, except the refractory metals such as tungsten, molybdenum, platinum, can also select from nichrome, silver, palladium etc.About the form of heater, the heater etc. of membranaceous heater or wire, coiled type, foil-like can be selected.In addition, when foil-like, laser etc. can be utilized to be implemented as figure processing.
The manufacture method of ceramic heater of the present invention is not particularly limited, such as in as the ceramic powders of raw material, add bonding agent and solvent, add sintering aid further as required, utilized ball mill to carry out mixing or utilize ultrasonic wave etc. to carry out dispersion to manufacture slurries.Utilize the methods such as doctor blade method (doctor blade method) slurries obtained to be manufactured tellite (greensheet), utilize the methods such as silk screen printing to form the circuit pattern be made up of the paste being principal component with the metal dust such as tungsten, molybdenum thereon.Further, stacked tellite thereon, after carrying out degreasing, sinters in such as nitrogen atmosphere in inert gas atmosphere.So ceramic heater can be obtained.
In addition, manufacture particle by methods such as spraying dry by the slurries utilizing said method to produce, make this shaping particles by methods such as punching presses and obtain formed body.Thereafter, form groove at the one side of formed body, in this groove, imbed the paper tinsel as the molybdenum of heater, the coil of tungsten or patterning.Then, add particle further and punch forming, can ceramic heater be produced by methods such as hot pressing.In addition, by sintering the punching press body produced by particle, sintered body prints heater, sintered body is stacked and engage, also can obtain heater.
On the ceramic heater produced like this, to bore a hole accordingly the through hole of lifter pin with semiconductor-fabricating device, thus can be arranged in the cavity of semiconductor-fabricating device.Now, preferably ceramic heater is arranged at the bottom surface of cavity via cylindrical support body.Such as shown in Figure 9, cylindrical support body 50 can be engaged at the back side of ceramic heater 11.
Particularly, prepare to make the through hole 14 of lifter pin not be positioned at the cylindrical support body 50 of the size of the degree of the inner side of cylindrical support body 50.Then, that preferably one end is engaged in airtightly ceramic heater 11 with the back side that is wafer mounting surface 15 opposition side.The metal contact conductor (not shown) being used for being energized to heater (not shown) can be received thus in cylindrical support body 50.Now, even if when using the corrosive gas of halogen family in the atmosphere in the outside of cylindrical support body 50, also can guard electrode go between from the corrosion of this corrosive gas.
More than enumerate the ceramic heater of object lesson to use in semiconductor manufacturing apparatus of the present invention to be illustrated, but the present invention is not limited to above-mentioned concrete example.Scope of the present invention is represented by the record of claims, and then comprises all changes in the implication and scope that are equal to the record of claims.
Claims (4)
1. a use in semiconductor manufacturing apparatus ceramic heater, has wafer mounting surface, has heater in inside, and the feature of this use in semiconductor manufacturing apparatus ceramic heater is,
Above-mentioned heater by having in concentric circles, the wire of the circuit pattern of swirl shape or arc-shaped formed, form in multiple curve-like wires of foregoing circuit pattern at a distance of through the center of wafer mounting surface and the wire of the center line preset distance vertical with wafer mounting surface sentence the mode partly with small curvature radius at least six and bend to arc-shaped.
2. use in semiconductor manufacturing apparatus ceramic heater according to claim 1, is characterized in that,
Bend in the part of arc-shaped at above-mentioned at least six places, at least in the inner side bending to the part of arc-shaped at three places, through hole is set respectively.
3. use in semiconductor manufacturing apparatus ceramic heater according to claim 2, is characterized in that,
In above-mentioned through hole, lifter pin is installed.
4. the use in semiconductor manufacturing apparatus ceramic heater according to Claims 2 or 3, is characterized in that,
Above-mentioned use in semiconductor manufacturing apparatus ceramic heater with the cylindrical support body of this ceramic heater of joint support on the face of above-mentioned wafer mounting surface opposition side.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-214554 | 2013-10-15 | ||
| JP2013214554 | 2013-10-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576442A true CN104576442A (en) | 2015-04-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410039786.8A Pending CN104576442A (en) | 2013-10-15 | 2014-01-27 | Ceramic heating device used for semiconductor manufacturing device |
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| Country | Link |
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| CN (1) | CN104576442A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107889289A (en) * | 2016-09-29 | 2018-04-06 | 日本特殊陶业株式会社 | Heater |
| CN110856295A (en) * | 2018-08-21 | 2020-02-28 | Lg电子株式会社 | Electric heater |
| CN111869318A (en) * | 2018-03-23 | 2020-10-30 | 日本碍子株式会社 | Multi-zone heater |
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| CN1473452A (en) * | 2001-07-09 | 2004-02-04 | IBIDEN�ɷ�����˾ | Ceramic heater and ceramic joined article |
| JP2004071647A (en) * | 2002-08-01 | 2004-03-04 | Ngk Spark Plug Co Ltd | Complex heater |
| CN1596557A (en) * | 2001-11-30 | 2005-03-16 | 揖斐电株式会社 | Ceramic heater |
| JP2007088484A (en) * | 2006-10-11 | 2007-04-05 | Ngk Insulators Ltd | Heater |
| JP4845389B2 (en) * | 2005-02-25 | 2011-12-28 | 京セラ株式会社 | Heater and wafer heating device |
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| JP2002198302A (en) * | 2000-12-27 | 2002-07-12 | Ibiden Co Ltd | Hot plate for semiconductor manufacture/inspection system |
| CN1473452A (en) * | 2001-07-09 | 2004-02-04 | IBIDEN�ɷ�����˾ | Ceramic heater and ceramic joined article |
| CN1596557A (en) * | 2001-11-30 | 2005-03-16 | 揖斐电株式会社 | Ceramic heater |
| JP2004071647A (en) * | 2002-08-01 | 2004-03-04 | Ngk Spark Plug Co Ltd | Complex heater |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107889289A (en) * | 2016-09-29 | 2018-04-06 | 日本特殊陶业株式会社 | Heater |
| CN111869318A (en) * | 2018-03-23 | 2020-10-30 | 日本碍子株式会社 | Multi-zone heater |
| CN111869318B (en) * | 2018-03-23 | 2022-08-26 | 日本碍子株式会社 | Multi-zone heater |
| CN110856295A (en) * | 2018-08-21 | 2020-02-28 | Lg电子株式会社 | Electric heater |
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Application publication date: 20150429 |
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