CN104571240A - High-accuracy band gap reference voltage source - Google Patents
High-accuracy band gap reference voltage source Download PDFInfo
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- CN104571240A CN104571240A CN201310465689.0A CN201310465689A CN104571240A CN 104571240 A CN104571240 A CN 104571240A CN 201310465689 A CN201310465689 A CN 201310465689A CN 104571240 A CN104571240 A CN 104571240A
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Abstract
The invention relates to a high-accuracy band gap reference voltage source. The high-accuracy band gap reference voltage source is formed by connecting an operational amplifier OP, a plurality of PMOS transistors PM, a plurality of NMOS transistors NM, a plurality of PNP triodes Q and a plurality of resistors R; a method of respectively carrying out temperature compensation in positive and negative temperature intervals is adopted to respectively shunt a current by the NMOS tubes on the resistors and the triodes so as to fulfill the aim; by introducing a negative feedback between the operational amplifier OP and a power supply VCC, a voltage rejection ratio of the band gap reference voltage source is improved, so that the band gap reference voltage source obtains a high-accuracy reference voltage; the high-accuracy band gap reference voltage source has a temperature coefficient of 8.20 ppm/DEG C and below within a temperature range from minus 40 to 120 DEG C, has a power supply voltage rejection ratio of 83.0dB under the low frequency and can be widely applied to a civil or military integrated circuit required to be supplied with a high-accuracy reference potential.
Description
Technical field:
The invention belongs to the bandgap voltage reference field in integrated circuit.
Background technology:
Bandgap voltage reference is one of important composition circuit of all multi-chips, and needing the occasion of high precision reference potential to have a lot of application, such as: comparer, ADC and DAC etc., the quality of its performance has a significant impact chip performance.The leading indicator weighing bandgap voltage reference performance is temperature coefficient and supply-voltage rejection ratio, and along with the development of technology and the harsher of application, the high precision performance index request of bandgap voltage reference is more and more higher.
The circuit structure of existing traditional bandgap reference voltage source as shown in Figure 2, its many employing single order temperature compensation mode, it connects into bandgap voltage reference by the 8th PMOS PM8, the 9th PMOS PM9, the tenth PMOS PM10, operational amplifier OP1, the 5th PNP triode Q5, the 6th PNP triode Q6, the 7th PNP triode Q7, the 5th resistance R5, the 6th resistance R6 and power supply VCC1 and earth terminal GND1, reference voltage output end Vref1.This structure is difficult to the temperature coefficient being issued to less than 10ppm/ DEG C in the application scenario of civilian (-20-85 DEG C) and military (-40-120 DEG C), and its power voltage rejection ratio characteristic is also undesirable.
Summary of the invention:
In order to the temperature coefficient and supply-voltage rejection ratio that overcome existing traditional bandgap reference voltage source can not meet the weak point of high-precision applications application requirements, the present invention proposes a kind of high precision band gap reference voltage source, see accompanying drawing 1, it produces circuit 1 by positive temperature coefficient (PTC), positive temperature coefficient (PTC) bucking voltage produces circuit 2, reference voltage output circuit 3 connects and composes; Positive temperature coefficient (PTC) current generating circuit 1 is connected into by operational amplifier OP, the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3, the first NMOS tube NM1, a PNP triode Q1, the 2nd PNP triode Q2, the first resistance R1, the second resistance R2, power supply VCC, ground connection GND; 4th PMOS PM4, the 5th PMOS PM5, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 3rd PNP triode Q3, the 3rd resistance R3 connect into positive temperature coefficient (PTC) compensating current generating circuit 2; By the 6th PMOS PM6, the 7th PMOS PM7, the 4th NMOS tube NM4, the 5th NMOS tube NM5, the 4th PNP triode Q4, the 4th resistance R4, reference voltage output end Vref connect into reference voltage output circuit; Connection between above-mentioned three circuit is: the power supply of the first PMOS PM1 to the 7th PMOS PM7 is for being connected to power supply VCC; 3rd PMOS PM3 connects mutually altogether to the grid of the 7th PMOS PM7; Base stage, the emitter of the one PNP triode Q1 to the 4th PNP triode Q4 connect mutually altogether; The drain electrode of the 5th PMOS PM5 in positive temperature coefficient (PTC) compensating current generating circuit and the common contact of the grid of the second NMOS tube NM2 and the second resistance R2 are connected to the grid of the 4th NMOS tube NM4 in reference circuit output circuit 3.
The advantage of a kind of High Precision Bandgap Reference of the present invention improves supply-voltage rejection ratio, improves temperature coefficient, is applicable to the occasion of high-precision requirement.
Accompanying drawing illustrates:
Fig. 1 is a kind of High Precision Bandgap Reference circuit structure diagram of the present invention
Fig. 2 is the band gap reference voltage source circuit structural drawing that prior art is traditional
Specific embodiment: invention further illustrates as follows in conjunction with specific embodiments see accompanying drawing:
As shown in Figure 1, it is made up of following a few part a kind of High Precision Bandgap Reference circuit structure: export subcircuits 3 by positive temperature coefficient (PTC) current generating circuit 1, positive temperature coefficient (PTC) bucking voltage generation circuit 2 and benchmark and form.
Positive temperature coefficient (PTC) current generating circuit 1 by operational amplifier OP, the first PMOS PM1, the second PMOS PM2, the first NMOS tube NM1, the first PNP triode Q1, the second PNP triode Q2 and the first resistance R1, the second resistance R2 connect and compose, the equal ground connection of ground level of the first PNP pipe Q1 and the second PNP pipe Q2, connect with diode fashion, amplifier makes the current potential of A, B 2 equal by negative feedback, first resistance R1 produces positive temperature coefficient (PTC) voltage, and then generation positive temperature coefficient (PTC) electric current copies to by PMOS current mirror the use that other branch roads do temperature compensation, in order to improve the deficiency of traditional bandgap reference source supply-voltage rejection ratio, the feedback loop of the active load inverting amplifier and the second resistance R2 formation that introduce the first NMOS tube NM1 and the first PMOS PM1 formation is to suppress the impact of the fluctuation of supply voltage, the grid of the first NMOS tube NM1 is connected on the output terminal of operational amplifier OP, drain electrode is connected on the drain electrode of the first PMOS PM1, grid, the leakage copolar of the first PMOS PM1 pipe are connected to the grid of pmos current mirror to PM2, PM3, and the second resistance R2 is connected between the first resistance R1 and the second PMOS PM2, the working mechanism of this feedback control loop is as follows: when supply voltage there occurs change, when such as supply voltage increases, this can cause the electric current of PMOS current mirror branch road also to increase, and the potential change of A point can be greater than B point because of the existence of the first resistance R1, therefore the output of operational amplifier can make the grid potential of a PM1 and the 3rd PM3 pipe increase after the inverting amplifier that the first NMOS tube NM1 and the first PMOS PM1 that decline forms, the decline of gate source voltage makes branch current also reduce, achieve the negative feedback process of mains fluctuations, simultaneously also become due to the introducing of the second resistance R2 can flexible for its intensity, avoid and occur that negative feedback intensity crosses strong or excessively weak problem, above measure substantially increases the supply-voltage rejection ratio of band gap reference.
Positive temperature coefficient (PTC) bucking voltage produces circuit 2 and benchmark exports the temperature compensation core that subcircuits 3 constitutes this bandgap voltage reference.Positive temperature coefficient (PTC) bucking voltage produces circuit by the 4th, the 5th PMOS PM4, PM5, the second to the 3rd NMOS tube NM2, NM3, the 3rd resistance R3, the 3rd PNP triode Q3 composition, wherein, the drain electrode of the second NMOS tube NM2 and source electrode are connected on the two ends of the second resistance R3 respectively, grid is connected between the 5th PMOS PM5 and the 3rd resistance R3, the effect of the second NMOS tube NM2 is the positive temperature coefficient (PTC) electric current that the PMOS current mirror flowing through the 3rd resistance R3 copies, the drain electrode of the 3rd NMOS tube NM3 and source electrode are connected on the two ends of the 3rd PNP triode Q3 respectively, grid is connected between the 5th PMOS PM5 and the 3rd resistance R3, and the effect of this NMOS tube NM3 is the positive temperature coefficient (PTC) electric current flowing through PNP pipe Q3, benchmark exports subcircuits by the 6th, the 7th PMOS PM6, PM7, the 4th, the 5th NMOS tube NM4, NM5, the 4th resistance R4, and the 4th PNP triode Q4 connects to form, wherein, the drain electrode of the 4th NMOS tube NM4 and source electrode are connected on the two ends of the 4th resistance R4 respectively, grid is connected between the 5th PMOS PM5 and the 3rd resistance R3, the effect of the 4th NMOS tube NM4 is the positive temperature coefficient (PTC) electric current flowing through the 4th resistance R4, the drain electrode of the 5th NMOS tube NM5 and source electrode are connected on the two ends of the 4th PNP triode Q4 respectively, grid is connected between the 7th PMOS PM7 and the 4th resistance R4, and the effect of the 5th NMOS tube NM5 is the positive temperature coefficient (PTC) electric current flowing through the 4th PNP triode Q4, principle of work and the mechanism of this band gap reference temperature compensation core are as follows: in order to realize the section linear compensating of temperature, consider when band gap reference is in the state that negative temperature coefficient is dominant, the 5th NMOS tube NM5 being now connected across the 4th PNP triode Q4 two ends can miss corresponding one part of current under the control of grid voltage, the electric current flowing through the 4th PNP triode Q4 will reduce, pressure drop on it also can reduce, by pressure drop thereon, there is negative temperature coefficient, now just be equivalent to weaken the impact of its negative temperature coefficient, thus the change in the temperature range (low-temperature zone) making the output voltage of band gap reference be dominant at negative temperature coefficient is more mild, thus the temperature section linear compensation achieved in negative temperature coefficient interval.Consider when band gap reference is in the state that positive temperature coefficient (PTC) is dominant, the 4th NMOS tube NM4 being now connected across the 4th resistance R4 two ends also can divide one part of current of pouring off under the control of grid voltage, the positive temperature coefficient (PTC) electric current flowing through the 4th resistance R4 will reduce, therefore therefore the positive temperature coefficient (PTC) voltage on the 4th resistance R4 also can reduce, now just be equivalent to weaken its positive temperature coefficient (PTC) to be dominant impact, thus the change in the temperature range (high temperature section) making the output voltage of band gap reference be dominant in positive temperature coefficient (PTC) is more mild, thus the temperature section linear compensation achieved in positive temperature coefficient (PTC) interval.The grid voltage of the 4th NMOS tube NM4 produces circuit by positive temperature coefficient (PTC) bucking voltage to be provided, this is because four NMOS tube NM4 compensate shunting NMOS tube when high temperature section positive temperature coefficient (PTC) is dominant, when temperature is higher, due to the reduction of NMOS tube threshold voltage, the electric current flowing through four NMOS tube NM4 can increase a lot, in order to avoid the negative temperature coefficient of high temperature section introduced thus, the grid-control voltage of the 4th NMOS tube NM4 must meet following condition: a) when circuit enters the temperature range that positive temperature coefficient (PTC) electric current is dominant, the grid of the 4th NMOS tube NM4 must have enough voltage to guarantee now can miss considerable electric current to reduce the positive temperature coefficient (PTC) voltage on the 4th resistance R4, b), after entering higher temperature, the 4th NMOS tube NM4 grid voltage must decline to ensure that can not miss too much electric current makes band gap reference present negative temperature coefficient.For this reason, positive temperature coefficient (PTC) bucking voltage produces circuit for providing the grid voltage of the 4th NMOS tube NM4, wherein the 3rd resistance R3 resistance is larger to guarantee that positive temperature coefficient (PTC) bucking voltage is enough in low-temperature zone, the breadth length ratio that simultaneously the second NMOS tube is larger can make it export control voltage to decline in high temperature section, with the b that satisfies condition.The band gap reference of above Segmented temperature compensation measure is adopted to have extraordinary temperature characterisitic.
The negative feedback that utilizes designed above is improved the supply-voltage rejection ratio of band gap reference and is realized the method for wise temperature linear compensation by NMOS tube shunting, very effectively can improve the weak point of existing band gap reference supply-voltage rejection ratio and its temperature coefficient aspect, there is circuit simple and clear, and performance is remarkable, two is improve successful.Under reference CSMC0.5 μm of standard, under Cadence Spectre emulator, this band gap reference has the supply-voltage rejection ratio of 83.0dB at low frequency, in the temperature range of-40-120 DEG C, have the temperature coefficient of 8.20ppm/ DEG C, these simulation results well demonstrate the validity of above measure.
Claims (1)
1. a High Precision Bandgap Reference, is characterized in that it is connected and composed by positive temperature coefficient (PTC) generation circuit 1, positive temperature coefficient (PTC) bucking voltage generation circuit 2, reference voltage output circuit 3; Positive temperature coefficient (PTC) current generating circuit 1 is connected into by operational amplifier OP, the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3, the first NMOS tube NM1, a PNP triode Q1, the 2nd PNP triode Q2, the first resistance R1, the second resistance R2, power supply VCC, ground connection GND; 4th PMOS PM4, the 5th PMOS PM5, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 3rd PNP triode Q3, the 3rd resistance R3 connect into positive temperature coefficient (PTC) compensating current generating circuit 2; By the 6th PMOS PM6, the 7th PMOS PM7, the 4th NMOS tube NM4, the 5th NMOS tube NM5, the 4th PNP triode Q4, the 4th resistance R4, reference voltage output end Vref connect into reference voltage output circuit; Connection between above-mentioned three circuit is: the power supply of the first PMOS PM1 to the 7th PMOS PM7 is for being connected to power supply VCC; 3rd PMOS PM3 connects mutually altogether to the grid of the 7th PMOS PM7; Base stage, the emitter of the one PNP triode Q1 to the 4th PNP triode Q4 connect mutually altogether; The drain electrode of the 5th PMOS PM5 in positive temperature coefficient (PTC) compensating current generating circuit and the common contact of the grid of the second NMOS tube NM2 and the second resistance R2 are connected to the grid of the 4th NMOS tube NM4 in reference circuit output circuit 3.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107272796A (en) * | 2016-04-07 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of band-gap reference circuit |
| CN110192164A (en) * | 2017-01-18 | 2019-08-30 | 新日本无线株式会社 | Reference voltage generating circuit |
| CN110568893A (en) * | 2018-01-05 | 2019-12-13 | 天津工业大学 | Ultra-high precision band gap reference source circuit |
| CN110908426A (en) * | 2019-10-30 | 2020-03-24 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN111245432A (en) * | 2020-04-21 | 2020-06-05 | 成都启英泰伦科技有限公司 | Ring oscillator |
| CN113885641A (en) * | 2021-10-26 | 2022-01-04 | 西安微电子技术研究所 | High-low temperature compensation circuit for band gap reference source |
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| US20080136504A1 (en) * | 2006-12-07 | 2008-06-12 | Young Ho Kim | Low-voltage band-gap reference voltage bias circuit |
| CN101216718A (en) * | 2007-12-27 | 2008-07-09 | 电子科技大学 | Piecewise linear temperature compensating circuit and temperature compensation voltage reference source |
| CN101763136A (en) * | 2009-11-09 | 2010-06-30 | 天津南大强芯半导体芯片设计有限公司 | Asymmetric band-gap reference circuit |
| US20130154721A1 (en) * | 2011-12-20 | 2013-06-20 | Atmel Corporation | Switched-capacitor, curvature-compensated bandgap voltage reference |
| CN203552114U (en) * | 2013-10-09 | 2014-04-16 | 长沙学院 | High-accuracy band-gap reference voltage source |
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2013
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Patent Citations (5)
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| US20080136504A1 (en) * | 2006-12-07 | 2008-06-12 | Young Ho Kim | Low-voltage band-gap reference voltage bias circuit |
| CN101216718A (en) * | 2007-12-27 | 2008-07-09 | 电子科技大学 | Piecewise linear temperature compensating circuit and temperature compensation voltage reference source |
| CN101763136A (en) * | 2009-11-09 | 2010-06-30 | 天津南大强芯半导体芯片设计有限公司 | Asymmetric band-gap reference circuit |
| US20130154721A1 (en) * | 2011-12-20 | 2013-06-20 | Atmel Corporation | Switched-capacitor, curvature-compensated bandgap voltage reference |
| CN203552114U (en) * | 2013-10-09 | 2014-04-16 | 长沙学院 | High-accuracy band-gap reference voltage source |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107272796A (en) * | 2016-04-07 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of band-gap reference circuit |
| CN110192164A (en) * | 2017-01-18 | 2019-08-30 | 新日本无线株式会社 | Reference voltage generating circuit |
| CN110192164B (en) * | 2017-01-18 | 2020-11-03 | 新日本无线株式会社 | Reference voltage generating circuit |
| CN110568893A (en) * | 2018-01-05 | 2019-12-13 | 天津工业大学 | Ultra-high precision band gap reference source circuit |
| CN110568893B (en) * | 2018-01-05 | 2020-11-06 | 天津工业大学 | Ultra-high precision band gap reference source circuit |
| CN110908426A (en) * | 2019-10-30 | 2020-03-24 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN110908426B (en) * | 2019-10-30 | 2022-04-22 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN111245432A (en) * | 2020-04-21 | 2020-06-05 | 成都启英泰伦科技有限公司 | Ring oscillator |
| CN113885641A (en) * | 2021-10-26 | 2022-01-04 | 西安微电子技术研究所 | High-low temperature compensation circuit for band gap reference source |
| CN113885641B (en) * | 2021-10-26 | 2022-09-13 | 西安微电子技术研究所 | High-low temperature compensation circuit for band gap reference source |
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