CN104570583A - Parameter optimization method in photomask manufacturing process - Google Patents
Parameter optimization method in photomask manufacturing process Download PDFInfo
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- CN104570583A CN104570583A CN201410815064.7A CN201410815064A CN104570583A CN 104570583 A CN104570583 A CN 104570583A CN 201410815064 A CN201410815064 A CN 201410815064A CN 104570583 A CN104570583 A CN 104570583A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000005457 optimization Methods 0.000 title claims abstract description 11
- 238000002474 experimental method Methods 0.000 claims abstract description 57
- 238000013461 design Methods 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 7
- 238000012795 verification Methods 0.000 claims description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 2
- 238000013507 mapping Methods 0.000 claims 1
- 238000013401 experimental design Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The embodiment of the invention discloses a parameter optimization method in a photomask manufacturing process, which comprises the following steps of: selecting at least 3 parameters influencing the photomask quality, wherein each parameter is endowed with a preset number of parameter values to form an orthogonal table for experiments, and other parameters are kept constant; the experimental steps are as follows: performing experiments according to the orthogonal table to obtain experiment results, performing parameter design on the result of each experiment, and solving the average signal-to-noise ratio (S/N) of each parameter at different values; and a drawing step: render S/N from the S/N? Effect map, by said S/N? The effect graph analysis predicts the optimal parameter combination. The embodiment of the invention selects representative experiment parameter combinations to carry out experiments by utilizing the orthogonal table so as to optimize a plurality of parameters which mainly influence the precision of the photomask product and determine the optimal process parameter combination, has the characteristics of simple, quick and effective optimization method and greatly improves the manufacturing precision of the photomask product.
Description
Technical Field
The invention belongs to the technical field of photomask manufacturing, and relates to a parameter optimization method in a photomask manufacturing process.
Background
The Mask (Mask) needs to undergo exposure, development, etching, and photoresist removal processes during the manufacturing process, and these processes have a great influence on the uniformity of product precision, the minimum line width value, the shape of lines, and the like.
There are many factors to influence Mask products, such as: focus (Foucs) size, energy (Dose) size, Critical Dimension (CD) correction, development (devilop) time, and Etch (Etch) time, etc., each of which can affect the final precision and line quality of the product. The setting of these parameters is usually based on the values provided by the supplier, but in many cases, the quality of the photomask product can not meet the expected requirements due to the uncertainty of the thickness, quality and performance of the photoresist of the raw material, the frequent need of testing and using new photoresist raw material, the slight change of the equipment itself along with the change of time, the change of the temperature and humidity of the clean room, the artificial uncertainty of the process, and the like. Therefore, photomask researchers need to adjust the process parameters of the equipment and the manufacturing process forcefully in time according to specific conditions, but the adjustment of the process parameters is basically to obtain the optimal process parameters of the final new product through a large number of repeated experiments, which is time-consuming and labor-consuming and cannot achieve the purpose in a limited time.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a method for optimizing parameters in a photomask manufacturing process, which performs a tabulation analysis on various influencing factors of a photomask product, thereby quickly and effectively determining an optimal process parameter combination and improving the precision of the photomask.
In order to solve the above technical problem, an embodiment of the present invention provides a method for optimizing parameters in a photomask manufacturing process, where the method includes:
parameter selection: selecting at least 3 parameters influencing the photomask quality, wherein each parameter is endowed with a preset number of parameter values to form an orthogonal table for experiments, and other parameters are kept constant;
the experimental steps are as follows: performing experiments according to the orthogonal table to obtain experiment results, performing parameter design on the result of each experiment, and solving the average signal-to-noise ratio (S/N) of each parameter at different values; and
drawing: and drawing an S/N effect diagram according to the S/N, and analyzing and predicting the optimized parameter combination through the S/N effect diagram.
Further, the drawing step further comprises the following steps:
a verification step: experiments were performed to verify whether the parameter combinations were optimal.
Further, the method adopts the following formula to judge the quality of the parameter value:
wherein,2represents the average of the sum of squares of the results of the experiments, n represents the number of experimental repetitions, n is 1, 2, 3 …, ynTable experimental results; S/N is the signal to noise ratio, i.e. the mean value2The reciprocal of (a); log (S/N) represents the logarithm of the signal-to-noise ratio; eta represents the experimental result after S/N dimensionless, and the quality of each parameter value of the experiment is judged according to the size of eta.
Further, each set of parameters in the parameter selection step is subjected to one experiment, and at least 2 sets of seam values are measured in one experiment to serve as a final result of the set of experiments.
Further, the parameters affecting the quality of the photomask selected in the parameter selection step are at least 3 of energy value, critical dimension correction value, developing time and etching time, each parameter is assigned with at least 3 parameter values, and the other parameters which are kept constant at least comprise focus value and developing solution concentration.
Further, the parameters affecting the mask quality selected in the parameter selection step are 4 types of energy values, CD correction values, development time and etching time, and each parameter is assigned with 5 parameter values.
Further, the experimental steps at least perform the operations of exposure, development, etching and photoresist removal.
Furthermore, the experimental object corresponding to the method is a soda raw material with the AZ type photoresist size of 5 inches.
The parameter optimization method in the photomask manufacturing process of the embodiment of the invention mainly selects representative experiment parameter combinations to carry out experiments by utilizing the orthogonal table so as to optimize a plurality of parameters which mainly influence the precision of photomask products and determine the optimal process parameter combination.
Drawings
FIG. 1 is a flow chart illustrating a method for optimizing parameters in a mask manufacturing process according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of an orthogonal experimental design of an embodiment of the present invention.
FIG. 3 is an orthogonal Table L9 (3) of selected parameter components for an embodiment of the invention3)。
FIG. 4 is an orthogonal Table L25 (5) of selected parameter components for an embodiment of the invention4)。
FIG. 5 is a table of experimental process parameters and results for an embodiment of the present invention.
FIG. 6 is the S/N average of the seam accuracy at different values for each of the parameters of FIG. 5.
Fig. 7 is a plot of the S/N effect of the signal-to-noise ratio plotted from fig. 6.
FIG. 8 is a table comparing seam accuracy values for optimum combinations of process parameters obtained for different experimental protocols.
FIGS. 9a, 9b and 9c are SEM images of the reticle lines obtained by the experiment according to the embodiment of the invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict, and the present invention is further described in detail with reference to the drawings and specific embodiments.
The embodiment of the invention provides a parameter optimization method in a photomask manufacturing process, which uses a Taguchi method for reference, selects representative experiment parameter combinations by using an orthogonal table to carry out an experiment to replace a comprehensive experiment, and can find the optimized parameter combinations from a plurality of parameters by only a small amount of limited experiments so as to obtain the optimal parameters and know the influence of each parameter on the final required quality of a photomask product.
Referring to fig. 1, an embodiment of the present invention provides a method for optimizing parameters in a mask manufacturing process, the method comprising: parameter selection, experiment and drawing; as an embodiment, the drawing step further includes a verification step after the drawing step.
Parameter selection: at least 3 parameters affecting the mask quality are selected, each parameter is assigned a predetermined number of parameter values to form an orthogonal table for experiments, and other parameters are kept constant. Please refer to fig. 2, which is a schematic diagram of orthogonal experimental design. A, B, C are three coordinate axes respectively representing three different influence factors, each influence factor is intersected in a three-dimensional space after being respectively provided with different values, and each intersection point comprises a group of selected process parameters. Referring also to FIG. 3, an orthogonal table L9 (3) of selected parameter components is shown3). A, B and C respectively represent three different influence factors, A1, A2, A3, B1, B2, B3, C1, C2 and C3 respectively represent three different parameter values taken by each influence factor.
For the experiment that three process parameters were selected and each process parameter had three values, if the experiment was performed in a comprehensive manner, experiments of 3 × 3 — 27 combinations were required, and the number of repetitions of each combination was not included. An orthogonal table L9 (3) shown in FIG. 3 is used3) The experiment arrangement only needs to be carried out for 9 times, so that the experiment times are greatly reduced. When the process parameters are more and the value of each process parameter is more, the overall experiment times are exponentially increased, and the workload is greatly reduced by orthogonal experiment design.
The parameters affecting the mask quality selected in the parameter selection step are energy value, critical dimension correction value, and display valueAt least 3 of shadow time and etching time, each parameter is assigned with at least 3 parameter values, and the other parameters which are kept constant at least comprise a focus value and a developing solution concentration. In the present embodiment, the parameters affecting the quality of the photomask selected in the parameter selection step are 4 types, including energy value, critical dimension correction value, developing time and etching time, and each parameter is given 5 parameter values; the experimental subject used a 5-inch soda stock of a certain AZ type photoresist to obtain a photomask product closest to a design value through adjustment of various parameters. As shown in FIG. 4, the orthographic representation is L25 (5)4) 25 sets of experiments were performed. As shown in fig. 5, for the experimental process parameter setting table, one experiment was performed for each set of parameters, and the magnitude of 2 sets of seam values was measured in one experiment as the final result of the set of experiments.
The experimental steps are as follows: and carrying out experiments according to the orthogonal table to obtain experiment results, carrying out parameter design on the result of each experiment, and solving the average signal-to-noise ratio (S/N) of each parameter at different values. Wherein, the experimental step at least carries out exposure, development, etching and degumming operations. Preferably, the experimental step adopts the following formula to judge the quality of the parameter value:
wherein,2represents the average of the sum of squares of the results of the experiments, n represents the number of experimental repetitions, n is 1, 2, 3 …, ynTable experimental results; S/N is the signal to noise ratio, i.e. the mean value2The reciprocal of (a); log (S/N) represents the logarithm of the signal-to-noise ratio; eta represents the experimental result after S/N dimensionless, and the quality of each parameter value of the experiment is judged according to the size of eta. As shown in FIG. 6, the S/N average value of the seam accuracy is obtained for each parameter at different values.
Drawing: and drawing an S/N effect diagram according to the S/N, and analyzing and predicting the optimized parameter combination through the S/N effect diagram. Please refer to fig. 7, which is a graph of the S/N effect of the snr plotted according to fig. 6. The 'standard' line represents a standard curve under a design value, the vertical axis represents the value of S/N, and the 'A', 'B', 'C' and 'D' lines represent the S/N of the seam precision when the values are different. The closer to the standard value, the more suitable the parameter is. Therefore, the drawing enables the result to be more visual, and the most appropriate parameters can be confirmed and obtained more conveniently and rapidly.
Since all combinations in the orthogonal table represent statistically the results of a full experiment, the predicted process parameter combination can be considered as the optimal parameter combination. As shown in FIG. 7, it is predicted from FIG. 7 that the optimal process parameter combination is A3B5C5D5, i.e., Dose is 1000, CD is 500, Defelop is 60, and Etch is 90.
FIG. 8 is a table comparing seam accuracy values under optimum process parameter combinations obtained in different experimental schemes, wherein the first scheme is a comprehensive experimental scheme, and the second scheme is a scheme of an embodiment of the invention. Wherein, the design value and S/N standard of signal-to-noise ratio are defined as: the seam value of the experimental design is 2.6 μm, and the standard signal-to-noise ratio S/N is-8.30 calculated according to the formula, namely, the combination closest to the standard value is selected from the S/N values calculated in the comprehensive experimental scheme and is defined as the optimal parameter combination corresponding to the comprehensive experiment.
As can be seen from fig. 8, the reticle seam accuracy prepared by predicting the optimal parameter combination is 2.64, which is significantly better than the reticle seam accuracy 2.52 in the first solution, please refer to fig. 9a, 9b and 9c, which are SEM images of reticle lines obtained by experiments, respectively showing the overall and cross-sectional local features of the reticle, and it can be seen from the images that the reticle product lines manufactured by the method of the embodiment of the present invention have good quality, and the line accuracy is very close to the design value.
As an embodiment, the drawing step further includes a verification step after the drawing step, the verification step: carrying out experiments to verify whether the parameter combination is optimal; if the parameter combination is not the optimal parameter combination, the operation is started again from the parameter selection step until the optimal process manufacturing parameter combination is obtained. Furthermore, the predicted result is more practical and reliable through the verification of the verification step.
When various abnormal conditions, such as exceeding precision, exceeding total length or insufficient equipment energy, occur in the photomask production and manufacturing process, or when a new glue type is used without entering a hand, and a plurality of process parameters need to be adjusted, the method provided by the embodiment of the invention is simpler, more convenient and more reliable compared with the traditional method for obtaining the optimal process parameter combination by performing a large number of experiments.
In summary, the parameter optimization method in the photomask manufacturing process according to the embodiment of the invention only needs a small amount of limited experiments to quickly and effectively select the correct process parameter combination, thereby achieving the result consistent with the design value and meeting the requirements of customers; meanwhile, the method can be used for quickly and effectively obtaining a new material and solving various problems such as precision deviation and the like in the production and manufacturing process; and the influence of each process parameter on the final requirement of the photomask quality can be known through variance analysis, so that a photomask researcher can conveniently and deeply research photomask products.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A method for optimizing parameters in a photomask manufacturing process, the method comprising:
parameter selection: selecting at least 3 parameters influencing the photomask quality, wherein each parameter is endowed with a preset number of parameter values to form an orthogonal table for experiments, and other parameters are kept constant;
the experimental steps are as follows: performing experiments according to the orthogonal table to obtain experiment results, performing parameter design on the result of each experiment, and solving the average signal-to-noise ratio (S/N) of each parameter at different values; and
drawing: and drawing an S/N effect diagram according to the S/N, and analyzing and predicting the optimized parameter combination through the S/N effect diagram.
2. The parameter optimization method of claim 1, wherein the mapping step is further followed by:
a verification step: experiments were performed to verify whether the parameter combinations were optimal.
3. The parameter optimization method of claim 1, wherein the method adopts the following formula to judge the quality of the parameter value:
wherein,2representative for multiple experimentsThe sum of squares of the results was averaged, n represents the number of experimental repetitions, n is 1, 2, 3 …, ynTable experimental results; S/N is the signal to noise ratio, i.e. the mean value2The reciprocal of (a); log (S/N) represents the logarithm of the signal-to-noise ratio; eta represents the experimental result after S/N dimensionless, and the quality of each parameter value of the experiment is judged according to the size of eta.
4. The parameter optimization method of claim 1, wherein the parameter selection step performs one experiment for each set of parameters, and at least 2 sets of seam values are measured in one experiment as a result of the final set of experiments.
5. The method of claim 1, wherein the parameters affecting the mask quality selected in the parameter selection step are at least 3 of energy value, CD correction value, developing time and etching time, each parameter has at least 3 assigned parameter values, and the other parameters that remain constant include at least focus value and developer concentration.
6. The method of claim 5, wherein the parameters affecting the mask quality selected in the parameter selection step are 4 of energy value, CD correction value, development time and etching time, and each parameter is assigned 5 parameter values.
7. The method of claim 1, wherein the testing step comprises at least exposure, development, etching, and photoresist stripping.
8. The method of any of claims 1 to 7, wherein the subject is a 5 "sized soda stock for type AZ photoresist.
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| CN201410815064.7A CN104570583A (en) | 2014-12-24 | 2014-12-24 | Parameter optimization method in photomask manufacturing process |
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Cited By (2)
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| CN106274069A (en) * | 2015-05-21 | 2017-01-04 | 上海超铂信息***技术有限公司 | A kind of mark processing technique method of testing and system |
| CN110785832A (en) * | 2017-07-27 | 2020-02-11 | 株式会社斯库林集团 | Parameter design support device and parameter design support method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106274069A (en) * | 2015-05-21 | 2017-01-04 | 上海超铂信息***技术有限公司 | A kind of mark processing technique method of testing and system |
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