CN104567954A - Micro-power broadband photoelectric detector - Google Patents
Micro-power broadband photoelectric detector Download PDFInfo
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- CN104567954A CN104567954A CN201510066076.9A CN201510066076A CN104567954A CN 104567954 A CN104567954 A CN 104567954A CN 201510066076 A CN201510066076 A CN 201510066076A CN 104567954 A CN104567954 A CN 104567954A
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Abstract
The invention provides a broadband photoelectric detector suitable for micro-watt or hecto-nano-watt power laser incidence. The broadband photoelectric detector can be used for performing cavity length sideband frequency locking on a laser resonant cavity, locking working states and synchronously monitoring modes of the resonant cavity. A photo-current signal transformed by micro-watt and hecto-nano-watt power optical signals is transformed into a voltage signal by virtue of transimpedance pre-amplification, and then is subjected to high-frequency reverse phase proportional amplification to output a signal required by a sideband frequency locking system; and meanwhile, a detector has a direct current signal output and can be used for monitoring the power size of incident light and a transmission mode of the resonant cavity. The detector comprises a PIN photodiode, a high-frequency transimpedance amplification circuit, a high-frequency reverse phase proportional amplification circuit, a high-frequency coupling capacitor, a resistance high frequency element, a sampling resistor and a low-frequency direct current amplification circuit. The photoelectric detector provided by the invention has the advantages of wide band width, high sensitivity, quick response, high gain, low noise, synchronous alternating current and direct current monitoring, low cost and the like, and can be well applied to transmission light micro-power sideband frequency stabilization, mode monitoring and working state locking of the laser resonant cavity.
Description
Technical field
The present invention relates to photodetector, be specifically related to the photodetector in the optical resonator locking system in quantum optics experiment, specifically a kind of for detecting the faint transmitted light of resonator cavity output light through high reflective mirror, and utilize sideband frequency locking frequency-stabilizing method, the chamber length of resonator cavity and the micropower wideband photodetectors of duty locking can well be realized.
Background technology
Quantum information is the important research topic in one, the world today, the information transmission utilizing quantum entanglement to complete and process, is the approach that people provide the safer communication of development and calculate more fast.Along with the deep development of quantum information research, the degree of entanglement of people to the intensity of compression of compressed state optical field and entangled requires more and more higher.And compressed state optical field and entangled are all generally exported by dissimilar optical parametric oscillation and obtain.In actual experiment system, in order to make optics parametric oscillator (opo) energy continous-stable output squeezing state light field or entangled, optics parametric oscillator (opo) must be locked in the resonance frequency of Injection Signal light, the degree of entanglement impact of height on the intensity of compression of final output squeezing state light field or entangled of locking precision is very large.In order to the entangled of the compressed state optical field or high degree of entanglement that obtain high compactness, the high precision locking of optical parametric oscillation just must be realized.
Optical parametric oscillation for generation of squeezed state and entangled is all generally the Frequency Locking being realized resonator cavity and injected field by the way of sideband frequency locking.In sideband Locking System, we need to load a frequency on laser is the modulation signal of about 10-80MHz, and carry out detecting the error signal that demodulation obtains latch well length to the signal of resonator cavity reflection, then signal back is driven the piezoelectric ceramics of optical resonator, realize the locking that resonator is long.In former locking system, in order to obtain good error signal, generally produce the error signal of locking chamber by carrying out mixing after the reflected light measurement of optical resonator, at this moment, although the flashlight inciding photodetector stronger (generally in milliwatt magnitude) can be ensured, but the error signal now produced easily is subject to the impact of laser power fluctuation, error signal is fluctuated up and down, reduce the precision of resonator cavity locking.The transmitted optical power of optical resonator is generally in hundred microwatt magnitudes, but these only need to carry out quantum information research, so to be used for locking the light of optical resonator can only be squeezed state or entangled when high reflective mirror reflects from a small amount of light beam that high reflective mirror transmits below, its energy is generally in microwatt magnitude or hundred nanowatt magnitudes, this just requires that detector must have good response to the light beam of this magnitude, to produce the error signal needed for locking resonator length.
In the generation system obtaining squeezed state and entangled, except the chamber that will control resonator cavity is long, we also need to control the phase contraposition phase between resonant cavity pump light and Injection Signal light.In former generation system, generally need to utilize another one low frequency photodetector to provide error signal, lock the phase contraposition phase between pump light and Injection Signal light, make whole device layout complicated, wiring is loaded down with trivial details.
Summary of the invention
The object of the invention is to provide a kind of micropower wideband photodetectors with high-gain, high bandwidth, high s/n ratio for optical resonator lockout issue, it can realize the locking to resonator cavity under hundreds of nanowatt to a few watts of optical power condition very well.
Micropower wideband photodetectors provided by the invention adopts following technical scheme to realize: a kind of micropower wideband photodetectors, comprises PIN photodiode, and the positive pole of PIN photodiode is connected to coupling capacitance and resistance high-frequency component; The coupling capacitance other end is connected with high frequency across resistance amplifying circuit, and high frequency is connected with high frequency inverse scaling circuit across the output terminal of resistance amplifying circuit, and the output terminal of high frequency inverse scaling circuit is held as AC; Resistance one end of high-frequency component is connected with the positive pole of PIN photodiode, and the other end of resistance high-frequency component is connected to low-frequency d amplifying circuit and sample resistance, and the other end of low-frequency d amplifying circuit is held as DC; The other end ground connection of sample resistance; After light field incides PIN photodiode, PIN photodiode converts light signal to corresponding photo-signal, and photo-signal is divided into high-frequency signal and low frequency signal two parts through coupling capacitance and resistance high-frequency component; Described high-frequency signal is the AC signal of frequency range >MHz, and described low frequency signal is the low-frequency d signal of frequency range <MHz; High-frequency signal is coupled through coupling capacitance, then amplifies across resistance amplifying circuit and high frequency inverse scaling circuit through high frequency, is held export by AC; Low-frequency d signal through resistance high-frequency component, and obtains voltage signal through sample resistance, then amplifies through low-frequency d amplifying circuit, is held export by DC.
Further, after described PIN photodiode employing adds reversed bias voltage, junction capacity is less than the photodiode of 5pF.Described PIN photodiode has less junction capacity, and requires little to quantum efficiency, selects the inefficient photodiode of quantum to reduce costs.
Further, described high frequency comprises TI company across resistance amplifying circuit and produces the first amplification chip OPA847; Coupling capacitance connects the pin 2(inverting input of the first amplification chip OPA847), the pin 3 of the first amplification chip OPA847 is connected with electric capacity C4 and the magnetic bead bead2 of series connection in turn, the pin 3 of the first amplification chip OPA847 is also connected with resistance R2, the equal ground connection of magnetic bead bead2 and R2; The pin 2 of the first amplification chip OPA847 and pin 6(output terminal) between be connected with the feedback capacity C5 and C6 that are in series, be also connected with across hindering R5 between pin 2 and pin 6; The pin 4 of the first amplification chip OPA847 and pin 7 connect-the 5V ,+5V power supply through bypass filtering and decoupling respectively.
Further, described high frequency inverse scaling circuit comprises the second amplification chip OPA847 that a TI company produces; High frequency is connected with input resistance R7, the pin 2(inverting input of another termination second amplification chip of R7 OPA847 across the output terminal of resistance amplifying circuit); Second amplification chip OPA847 pin 3(in-phase input end) meet the resistance R9 the same with R7 value, R9 other end ground connection; The pin 2 of the second amplification chip OPA847 and pin 6(output terminal) between be connected with feedback resistance R11, also be connected with feedback capacity C7 and the C8 of series connection between pin 2 and pin 6, the pin 6 of the second amplification chip OPA847 meets 10nF electric capacity C9 again and 50 Ω resistance 50R export.
Further, described resistance high-frequency component is formed by 330uH inductance, 100u inductance and magnetic bead Bead3 tandem compound.
Further, described low-frequency d amplifying circuit comprises the low biased amplification chip OP27 of low noise, amplification chip OP27 pin 3 (in-phase input end) is connected with 10K Ω resistance R4, the R4 resistance other end is connected between sample resistance and resistance high-frequency component, amplification chip OP27 pin 2(inverting input) be connected with a stake resistance R3, the pin 2 of amplification chip OP27 and pin 6(output terminal) between be connected with feedback resistance R6, pin 6 connects stake resistance R8 and output resistance R10 respectively and exports, amplification chip OP27 pin 4, 7 meet-15V respectively, + 15V is through the power supply of bypass filtering.
Further, each circuit described is all printed on pcb board, and pcb board design adopts dual platen and floor file, and avoid the parallel cabling in two sides, under the die face and the back side not floor file, signal lead is all wide is 50mil, the signal lead back side not floor file.
Employing electromagnetism interference designs, and is contained in by pcb board in anti-electromagnetic screen can, outputs signal and adopt coaxial cable to be connected with bnc interface; And adopting lithium battery to make Power supply, power lead coaxial cable is also as far as possible short.
Compared with prior art, advantage of the present invention and effect: in order to ensure the locking effect of resonator cavity, existing optical resonator lock-in techniques generally adopts sideband frequency locking technology to carry out the long locking in chamber.Very little owing to can be used for locking the light signal of resonator cavity after resonator cavity locking, produce suitable error signal for ensureing to incide the size of detector optical signal power, generally all adopt the reflected signal light of resonator cavity to produce the error signal required for locking.But in this case, if the incident optical power of resonator cavity slightly fluctuates, the power swing of resonator cavity reflected light will be caused, thus cause the drift of error signal, cause resonator cavity to lock the reduction of precision.Some are also had to adopt the high-gain micropower detector of APD avalanche diode can measure the light signal of microwatt magnitude power, but avalanche diode noise is large, and need larger reversed bias voltage, general needs tens volts are to a few hectovolt, its multiplication factor affects larger by temperature and reversed bias voltage, if do not have stable temperature to control and stable voltage, export instability, have considerable influence to resonator cavity locking.
The present invention just in time makes up above the deficiencies in the prior art part, gain and bandwidth all make much progress, the photo-signal that microwatt and hundred nanowatt power optical signal can be converted to is through being converted to voltage signal across resistance enlarge leadingly, export the signal met required for sideband Locking System again through high frequency inverse scale amplifying, realize utilizing faint transmitted light to the locking of resonator cavity.And detector of the present invention has direct current signal enlarging function simultaneously, only noly throw detector into by DC output end monitoring, also can monitor and mate the pattern in chamber, and can be used for the locking of resonator cavity duty.Realizing resonator length respectively with needing two cover detection systems in the past to compare with duty locking system, also simplify corresponding experimental system.
The present invention has wide, the high sensitivity of band, response is fast, high-gain, low noise, alternating current-direct current are monitored simultaneously, low cost and other advantages.The frequency stabilization of laserresonator transmitted light micropower sideband can be advantageously used in, pattern monitors and duty locks.
Accompanying drawing explanation
The principle schematic of Fig. 1 micropower photodetector of the present invention.
The core circuit figure of Fig. 2 micropower photodetector of the present invention.
Fig. 3 the present invention is applied to the fundamental diagram in sideband frequency locking frequency stabilization experiment.
Fig. 4 adds sweep signal, frequency discrimination curve and resonator cavity transmission mode when peak optical powers is 2.2 μ W.
Fig. 5 micropower photodetector of the present invention output power spectrum.
1-PIN photodiode, 2-high frequency is across hindering amplifying circuit, 3-high frequency inverse scaling circuit, 4-low-frequency d amplifying circuit, 5-coupling capacitance, 6-hinders high-frequency component, the piezoelectric ceramics that 7-sample resistance, 8-chamber locking optical resonator are used, 9-resonator cavity exports the guide-lighting mirror of light, 10-micropower wideband photodetectors, piezoelectric ceramics in 11-Injection Signal and pump light light path, 12-oscillograph, 13-lock-in amplifier, 14-high-frequency signal source.
Embodiment
Shown in Fig. 1 is microwatt magnitude luminous power wideband photodetectors of the present invention, and can be used for the frequency stabilization of laser micropower sideband frequency locking, phase locking monitors zlasing mode simultaneously.Specifically based on a kind of low noise wideband amplification chip, by photo-signal through being converted to voltage signal across resistance enlarge leadingly, then through high frequency inverse scale amplifying.Comprise PIN photodiode 1, high frequency is across resistance amplifying circuit 2, and high frequency inverse scaling circuit 3, coupling capacitance 5, hinders high-frequency component 6, sample resistance 7 and low-frequency d amplifying circuit 4.This photodetector has broadband, Old plant is fast, high-gain, low noise, alternating current-direct current are monitored simultaneously, low cost and other advantages.The frequency stabilization of laserresonator transmitted light micropower sideband frequency locking can be advantageously used in, pattern monitors and resonator cavity duty locks.
The chip that present embodiment ac amplifier circuit 2,3 adopts is a low noise, high gain-bandwidth accumulates large chip OPA847.PIN photodiode 1 selects low junction capacity photodiode.Adopt the photodiode of junction capacitance to improve signal to noise ratio (S/N ratio), prevent circuit oscillation.Exchange one-level and amplify employing across resistance amplification, not only can meet higher bandwidth because amplify across resistance, the loss of ac current signal can also be reduced, thus raising signal to noise ratio (S/N ratio).Because actual inductance exists stray capacitance, resistance high-frequency component 6 adopts many inductance and magnetic bead series system, can meet like this and all have higher impedance on wider frequency rate band, and suppresses low frequency end to introduce noise to the impact of signal.For sample resistance 7, if the luminous power of detection can be got more by force a little bit smaller relatively, otherwise get greatly a bit, can value 12k Ω.
Fig. 2 is the schematic diagram of this detector.Wherein positive and negative 15 volts of this circuit employing is powered; Bead1 is magnetic bead, and its value is 1k Ω@100MHz, and C1, C are shunt capacitance, and L3 is 100uH inductance, and coupling capacitance C3 is 100pF.
When pcb board designs, adopt dual platen and floor file, avoid the parallel cabling in two sides, under the die face and the back side not floor file, the wide about 50mil of signal lead, the signal lead back side not floor file.Thus avoid the generation of stray capacitance, distributed capacitance and stray inductance as far as possible.The distributed capacitance of signal wire can increase circuit noise and reduce signal to noise ratio (S/N ratio), and stray capacitance, distributed capacitance and stray inductance all also may make circuit unstable.
Need in an experiment by high-frequency signal by electrooptic modulator, be loaded into by modulation signal on light, this is a general needs power amplifier just, will cause very strong electromagnetic radiation like this.That detector must have very strong anti-electromagnetic interference capability, otherwise will affect the signal to noise ratio (S/N ratio) of detector greatly.The present invention adopts anti-EMI filter to design, and is contained in by PCB in anti-electromagnetic screen can, outputs signal and adopts coaxial cable to be connected with bnc interface; And adopting lithium battery to make Power supply, power lead coaxial cable is also as far as possible short.As the curve of the Electric Noise of Fig. 5, experiment obtains lower Electronics noice, and the noise power at modulating frequency place is very little, the noise power not adopting anti-EMI filter to design is measured in test, its curve fundamental sum has curve during 2.2 μ W luminous power input suitable, and the detector obviously without anti-interference process can not be used in actual experiment.
Shown in Fig. 3 is experiment Intermediate Side Band frequency locking frequency stabilization resonant cavity duty locking principle schematic diagram.Wherein 8 is chamber locking optical resonator piezoelectric ceramics (the outgoing mirror face adhered thereto of resonator cavity) used, can change the length of piezoelectric ceramics, thus the chamber changing resonator cavity is long by changing voltage; 9 is that resonator cavity exports the guide-lighting mirror of light, because any loss all can cause the reduction of resonator cavity output squeezing state light field and entangled intensity of compression, the faint light field of transmission after the present invention only utilizes its guide-lighting mirror is to realize the locking of resonator length and duty; 10 micropower wideband photodetectors designed by the present invention; 11 is the piezoelectric ceramics in Injection Signal and pump light light path, for locking the phase contraposition phase injected between resonator cavity flashlight and pump light, thus controls the duty of resonator cavity.In experiment, it is 46.75MHz sinusoidal signal that high-frequency signal source produces frequency, and it is loaded in fundamental frequency light through phase modulator.Flashlight is after resonator cavity exports, and measure and application for compressed state optical field and entangled through 9 major part reflections, few fractional transmission light enters detector.After micropower wideband photodetectors 10 processes, obtain high-frequency signal and low frequency signal, export from AC and the DC end of micropower wideband photodetectors respectively.
The other road signal mixing in frequency mixer MIX AC signal and high-frequency signal source 14 exported, obtain the error signal (frequency discrimination signal) required for resonator cavity locking, the frequency discrimination signal curve of optical resonator transmission peaks and correspondence as shown in Figure 4.Error signal controls through PID controller again, and high-voltage amplifier HV is loaded on the piezoelectric ceramics 8 of cavity after amplifying, and just can realize the locking that resonator is long.
And the low frequency signal that DC end exports, directly can monitor resonator cavity transmission mode with oscillograph 12, as shown in Figure 4.Meanwhile, inputted lock-in amplifier 13 and obtained error signal, then carried out process amplification through other a set of PID controller and high-voltage amplifier HV, and the control signal after process is loaded on piezoelectric ceramics 11, just can be realized the locking of resonator cavity duty.
Fig. 4 is resonator cavity locking error signal (frequency discrimination signal) adding resonator cavity transmission mode that sweep signal obtains and correspondence to resonator cavity.Its peak optical powers is 2.2 μ W.
Fig. 5 is the output power spectrum of photodetector of the present invention.By the AC termination spectrum analyzer of detector in experiment, can observe the output power spectrum of detector, for injected optical power is respectively 2.2 μ W in figure, the power spectrum that during 0.4 μ W, detector exports and the Electronics noice of detector.Can find out that detector bandwidth is about 80MHz.
Claims (8)
1. a micropower wideband photodetectors, is characterized in that, comprises PIN photodiode (1), and the positive pole of PIN photodiode (1) is connected to coupling capacitance (5) and resistance high-frequency component (6); Coupling capacitance (5) other end is connected with high frequency across resistance amplifying circuit (2), and high frequency is connected with high frequency inverse scaling circuit (3) across the output terminal of resistance amplifying circuit (2), and the output terminal of high frequency inverse scaling circuit (3) is held as AC; One end of resistance high-frequency component (6) is connected with the positive pole of PIN photodiode (1), the other end of resistance high-frequency component (6) is connected to low-frequency d amplifying circuit (4) and sample resistance (7), and the other end of low-frequency d amplifying circuit (4) is held as DC; The other end ground connection of sample resistance (7); After light field incides PIN photodiode (1), PIN photodiode (1) converts light signal to corresponding photo-signal, and photo-signal is divided into high-frequency signal and low frequency signal two parts through coupling capacitance (5) and resistance high-frequency component (6); Described high-frequency signal is the AC signal of frequency range >MHz, and described low frequency signal is the low-frequency d signal of frequency range <MHz; High-frequency signal through coupling capacitance (5) coupling, then amplifies across resistance amplifying circuit (2) and high frequency inverse scaling circuit (3) through high frequency, is held export by AC; Low-frequency d signal through resistance high-frequency component (6), and obtains voltage signal through sample resistance (7), then amplifies through low-frequency d amplifying circuit (4), is held export by DC.
2. micropower wideband photodetectors as claimed in claim 1, is characterized in that, after described PIN photodiode (1) adopts and adds reversed bias voltage, junction capacity is less than the photodiode of 5pF.
3. micropower wideband photodetectors as claimed in claim 1 or 2, is characterized in that, described high frequency comprises TI company across resistance amplifying circuit (2) and produces the first amplification chip OPA847; Coupling capacitance (5) connects the pin 2 of the first amplification chip OPA847, the pin 3 of the first amplification chip OPA847 is connected with electric capacity C4 and the magnetic bead bead2 of series connection in turn, the pin 3 of the first amplification chip OPA847 is also connected with resistance R2, the equal ground connection of magnetic bead bead2 and R2; Being connected with the feedback capacity C5 and C6 that are in series between the pin 2 of the first amplification chip OPA847 and pin 6, being also connected with across hindering R5 between pin 2 and pin 6; The pin 4 of the first amplification chip OPA847 and pin 7 connect-the 5V ,+5V power supply through bypass filtering and decoupling respectively.
4. micropower wideband photodetectors as claimed in claim 1 or 2, is characterized in that, described high frequency inverse scaling circuit (3) comprises the second amplification chip OPA847 that a TI company produces; High frequency is connected with input resistance R7, the pin 2 of another termination second amplification chip of R7 OPA847 across the output terminal of resistance amplifying circuit (2); Second amplification chip OPA847 pin 3 meets the resistance R9 the same with R7 value, R9 other end ground connection; Be connected with feedback resistance R11 between the pin 2 of the second amplification chip OPA847 and pin 6, be also connected with feedback capacity C7 and the C8 of series connection between pin 2 and pin 6, the pin 6 of the second amplification chip OPA847 meets 10nF electric capacity C9 again and 50 Ω resistance 50R export.
5. micropower wideband photodetectors as claimed in claim 1 or 2, it is characterized in that, described resistance high-frequency component (6) is formed by 330uH inductance, 100uH inductance and magnetic bead Bead3 tandem compound.
6. micropower wideband photodetectors as claimed in claim 1 or 2, it is characterized in that, described low-frequency d amplifying circuit (4) comprises the low biased amplification chip OP27 of low noise, amplification chip OP27 pin 3 is connected with 10K Ω resistance R4, the R4 resistance other end is connected between sample resistance (7) and resistance high-frequency component (6), amplification chip OP27 pin 2 is connected with a stake resistance R3, feedback resistance R6 is connected with between the pin 2 of amplification chip OP27 and pin 6, pin 6 connects stake resistance R8 and output resistance R10 respectively and exports, amplification chip OP27 pin 4, 7 meet-15V respectively, + 15V is through the power supply of bypass filtering.
7. micropower wideband photodetectors as claimed in claim 1 or 2, it is characterized in that, each circuit described is all printed on pcb board, pcb board design adopts dual platen and floor file, avoid the parallel cabling in two sides, face and the back side not floor file under the die, signal lead is all wide is 50mil, the signal lead back side not floor file.
8. micropower wideband photodetectors as claimed in claim 7, is characterized in that, adopts electromagnetism interference design, is contained in by pcb board in anti-electromagnetic screen can, outputs signal and adopt coaxial cable to be connected with bnc interface; And adopt lithium battery to make Power supply, power lead coaxial cable.
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Cited By (6)
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| CN105428967A (en) * | 2015-12-23 | 2016-03-23 | 山西大学 | High-precision temperature locking apparatus and locking method for entangled source |
| CN107271987A (en) * | 2017-07-10 | 2017-10-20 | 南京理工大学 | Laser ranging amplifying circuit based on avalanche photodide |
| CN110779623A (en) * | 2019-11-07 | 2020-02-11 | 山西大学 | Balanced zero-beat detector integrated with locking branch |
| CN111122942A (en) * | 2019-12-13 | 2020-05-08 | 珠海博杰电子股份有限公司 | Low current test system |
| CN113670345A (en) * | 2021-08-10 | 2021-11-19 | 之江实验室 | Low-noise photoelectric detection device for decomposing photocurrent signal |
| CN116826499A (en) * | 2023-06-13 | 2023-09-29 | 山西大学 | High-power single-frequency pulse laser based on injection locking technology |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428967A (en) * | 2015-12-23 | 2016-03-23 | 山西大学 | High-precision temperature locking apparatus and locking method for entangled source |
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| CN107271987A (en) * | 2017-07-10 | 2017-10-20 | 南京理工大学 | Laser ranging amplifying circuit based on avalanche photodide |
| CN110779623A (en) * | 2019-11-07 | 2020-02-11 | 山西大学 | Balanced zero-beat detector integrated with locking branch |
| CN111122942A (en) * | 2019-12-13 | 2020-05-08 | 珠海博杰电子股份有限公司 | Low current test system |
| CN113670345A (en) * | 2021-08-10 | 2021-11-19 | 之江实验室 | Low-noise photoelectric detection device for decomposing photocurrent signal |
| CN113670345B (en) * | 2021-08-10 | 2023-09-15 | 之江实验室 | Low-noise photoelectric detection device for photoelectric current signal decomposition |
| CN116826499A (en) * | 2023-06-13 | 2023-09-29 | 山西大学 | High-power single-frequency pulse laser based on injection locking technology |
| CN116826499B (en) * | 2023-06-13 | 2024-03-12 | 山西大学 | High-power single-frequency pulse laser based on injection locking technology |
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