CN104561939B - Ultra-thin reaction chamber - Google Patents
Ultra-thin reaction chamber Download PDFInfo
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- CN104561939B CN104561939B CN201510013868.XA CN201510013868A CN104561939B CN 104561939 B CN104561939 B CN 104561939B CN 201510013868 A CN201510013868 A CN 201510013868A CN 104561939 B CN104561939 B CN 104561939B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- Chemical Vapour Deposition (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention relates to the closed cavity engineering device technique field to be chemically reacted for laser Gaseous, ultra-thin reaction chamber is provided, including pedestal, pedestal is provided with reacting hole, diaphragm, jet element and reaction gas distribution ring, jet element is provided with reaction gas spout, reaction gas distribution ring is provided with annular air channel, pedestal is provided with a reaction gas air intake duct, a reaction gas gas off-take and a vacuum suction road, pedestal lower surface is provided with a reaction gas collection mouth and a vacuum exhaust nozzle, reaction gas distribution ring is provided with groove, and the size of groove becomes larger along the direction that gas flows.Reaction gas distribution ring is detachably connected with jet element, and pedestal only sets a reaction gas air intake duct, a reaction gas gas off-take and a vacuum suction road, and ultra-thin reaction chamber thickness is thinner, and reaction localization precision is higher, and repairing defect is smaller；Because reaction gas is adjusted by each groove, throughput balance so that reaction gas is uniformly, stably spray, insensitive to deposition direction, air-flow inlet and outlet, improves repairing yields.
Description
Technical field
The invention belongs to the closed cavity engineering device technique field to be chemically reacted for laser Gaseous, more particularly to ultra-thin reaction
Chamber.
Background technology
At present, in the precision such as the display devices such as semiconductor devices, liquid crystal, plasma, organic EL and photomask manufacture
Laser assisted microprocessing field (micron, sub-micron, deep-submicron), in production, semi-finished product are often with some various forms
The defects of, these defects need just become qualified product after carrying out repairing treatment.Existing repairing technique has：Focused ion
Beam (FIB) repairing, dispensing (Dispensing) repairing, laser Gaseous chemical deposition (Laser Chemical Vapor
Deposition, LCVD) repairing etc..Wherein, laser Gaseous chemical deposition repairing moderate cost, repair efficiency, which also meets to use, to be wanted
Ask.
In existing laser Gaseous chemical deposition repairing technique, typically using lasing light emitter, lens group and reaction chamber, its laser
The laser beam of source transmitting first passes through lens group and then is projeced into through reaction chamber on the machined surface of product to be repaired, and reacts
Gas flows through the machined surface of product to be repaired via air flue distribution inside reaction chamber, treats repair products and is repaired.
However, existing reaction chamber thickness is big, it can not be used under the lens group of high-resolution and short operating distance, difficult
To improve the localization precision of laser Gaseous chemical reaction.Moreover, distribution of air flow is uneven so that laser Gaseous chemical reaction efficiency
Low, for repairing area to the gentle flow inlet and outlet area sensitive of reactive gas current deposition direction, it is bad to cause to deposit film forming, and makes defect
Repairing failure, so that whole product rejection.
The content of the invention
It is an object of the invention to provide ultra-thin reaction chamber, it is intended to solves existing reaction chamber and causes laser because thickness is big
Gas-phase chemical reaction localization low precision and make it that laser Gaseous chemical reaction efficiency is low, patch area because distribution of air flow is uneven
The problem of domain fails to the gentle flow inlet and outlet area sensitive of reactive gas current deposition direction, the bad, defect mending of deposition.
In order to solve the above technical problems, the technical scheme of ultra-thin reaction chamber provided by the invention is that it includes pedestal, described
Reacting hole is equipped with pedestal, upside is provided with for covering the reacting hole and transparent diaphragm in the hole of the reacting hole,
Downside is provided with jet element, and the jet element is equipped with reaction gas spout, and the upper surface of the jet element is detachably connected
There is reaction gas distribution ring, the endoporus of the reaction gas distribution ring is relative with the reaction gas spout, is available for laser beam to pass through；It is described
Reaction gas distribution ring offers an annular air channel communicated with the reaction gas spout, and the pedestal is provided with one and the annular
The reaction gas air intake duct that air flue communicates, a reaction gas annular in shape is provided with the periphery of the reacting hole on the pedestal lower surface
Collection mouth, one and the reaction gas collection mouth and the extraneous reaction gas gas off-take communicated, the pedestal are additionally provided with the pedestal
On lower surface in the periphery of the reaction gas collection mouth be provided with it is one annular in shape, for detaching air so that reaction gas is by vacuum insulation
Vacuum exhaust nozzle, be additionally provided with a vacuum suction road communicated with the vacuum exhaust nozzle on the pedestal；The reaction qi leel
Multiple circumferentially distributed, grooves for being communicated with the annular air channel are provided with ring, what the size of the groove flowed along reaction gas
Direction becomes larger.
Further, the pedestal is provided with a static air air intake duct, is taken out on the pedestal lower surface in the vacuum
The periphery of valve is provided with static air flow nipple that is one annular in shape, being communicated with the static air air intake duct.
Further, the thickness of the diaphragm is less than or equal to 3.0mm.
Further, the pedestal be provided with below the diaphragm one toward the diaphragm lower surface convey protection gas with
Reaction gas is avoided in the protection gas air intake duct and protection gas gas off-take that are deposited on the diaphragm lower surface.
Further, the reacting hole is shoulder hole, and the shoulder hole includes higher level's step and positioned at higher level's step
Subordinate's step of lower section, the jet element are overlapped on subordinate's step, and the diaphragm is overlapped in higher level's step
On.
Further, the reaction gas nozzle configuration is tapered, the endoporus of the reaction gas distribution ring be provided with it is described anti-
Gas blowout mouth-shaped is answered mutually to fit, hollow tapered round platform, the round platform is attached in the reaction gas spout.
Further, the pedestal upper surface is covered with producing heat to ensure the heating film of reaction gas reaction temperature.
Further, it is provided between the heating film and the diaphragm and is used to prevent the packing ring for reacting gas leakage.
Further, the gross thickness of the ultra-thin reaction chamber is less than or equal to 9.0mm.
Ultra-thin reaction chamber provided by the invention compares the beneficial effect of prior art：
Above-mentioned ultra-thin reaction chamber includes pedestal, and reacting hole is equipped with pedestal, and the hole inner underside of reacting hole is provided with spray nozzle part
Part and reaction gas distribution ring, reaction gas distribution ring offer annular air channel, and a reaction gas air intake duct, a reaction are additionally provided with pedestal
Gas gas off-take and a vacuum suction road, pedestal lower surface are provided with a reaction gas collection mouth and a vacuum exhaust nozzle annular in shape.
Because reaction gas distribution ring is detachably connected with jet element, closely it is sticked, without using the connection such as screw, nut so that anti-
Should the overall thickness of gas distribution ring and jet element diminish；Also, due on pedestal only set a reaction gas air intake duct, one
Reaction gas gas off-take and a vacuum suction road, therefore, on pedestal it is used to setting reaction gas air intake duct, reaction gas gas off-take and true
The space of empty air exhaust duct will diminish, so, the thickness overall beneficial to pedestal is reduced so that the gross thickness of ultra-thin reaction chamber is thinner,
It can be applied under the lens group that resolution ratio is higher, operating distance is shorter, to improve the localization precision of laser Gaseous chemical reaction, i.e.,
So that laser beam is smaller in the projection round dot diameter on work surface, so that it can be repaired the defects of more tiny.
Further, since reaction gas distribution ring is provided with multiple grooves, multiple grooves communicate with annular air channel, and circumferentially divide
Cloth, so, when reaction gas flows into annular air channel by reaction gas air intake duct, reactive gas current is divided into two-way, and along annular air channel
Flowing, finally, flowed out via the center of circumferentially distributed groove orientating reaction gas distribution ring, and flow to reaction gas spout.Due to
The center of laser beam transparent distribution of air flow ring, therefore, air-flow is surrounded on laser beam surrounding, is sprayed by reaction gas spout and is covered in light
On the work surface of film workpiece, i.e. surrounding injection of the reactive gas current towards laser beam round dot on work surface.
Importantly, because gradual diminuendo, throughput are gradually reduced by reactive gas current on the direction that it flows, because
This, it is uneven in order to reduce the throughput of each groove outflow in annular air channel, on the direction that the size of groove is flowed along reaction gas
Become larger, so, the groove of rear end on air current flow direction, strengthen throughput by increasing its size, so as to flat
The reactive gas current amount to weigh from the outflow of each groove.Therefore by the adjustment effect of each groove of reaction gas distribution ring, reaction gas can uniformly,
Stably by reaction gas spout and spray on the work surface of photomask workpiece, laser chemistry gas phase reaction can be improved
Efficiency.Regardless of whether laser beam accurately passes through the center of reaction gas spout, if the defects of being accurately aimed at work surface area
Domain, reaction gas can be evenly distributed and come centered on laser beam round dot, reaction gas in the deposition on work surface also compared with
To be uniform, therefore, above-mentioned ultra-thin reaction chamber is to reaction gas in the deposition direction on work surface and laser beam in reaction gas
Transmission position on spout and work surface is simultaneously insensitive, and the yields of its repair products is largely increased.
Brief description of the drawings
Fig. 1 is the profile of ultra-thin reaction chamber provided in an embodiment of the present invention, lens group and photomask workpiece；
Fig. 2 is that the air-flow at the reaction gas distribution ring of ultra-thin reaction chamber provided in an embodiment of the present invention moves towards figure；
Fig. 3 is the upward view of ultra-thin reaction chamber provided in an embodiment of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
As shown in Figures 1 to 3, it is preferred embodiment provided by the invention.Black arrow in Fig. 1, Fig. 2 represents walking for air-flow
To.
It should be noted that when part is referred to as " being fixed on " or " being arranged at " another part, it can be directly another
On one part or it may be simultaneously present part placed in the middle.When a part is known as " being connected to " another part, it can
To be directly to another part or may be simultaneously present part placed in the middle.
It should also be noted that, the orientation term such as left and right, upper and lower in the present embodiment, be only each other relative concept or
Using the normal operating condition of product as reference, and should not be regarded as restrictive.
As shown in Figure 1 to Figure 3, the ultra-thin reaction chamber 10 that the present embodiment provides, repaired for laser Gaseous chemical deposition, its
Including pedestal 11, be equipped with reacting hole 111 on pedestal 11, in the hole of reacting hole 111 upside be provided be used to covering reacting hole 111 and
Transparent diaphragm 12, downside are provided with jet element 13, and jet element 13 is equipped with reaction gas spout 131, jet element 13
Upper surface is removably connected with reaction gas distribution ring 14, and the endoporus of reaction gas distribution ring 14 is relative with reaction gas spout 131, is available for
Laser beam passes through；Reaction gas distribution ring 14 offers an annular air channel 141 communicated with reaction gas spout 131, is set on pedestal 11
There is a reaction gas air intake duct 142 communicated with annular air channel 141, one is provided with the periphery of reacting hole 111 on the lower surface of pedestal 11
Reaction gas collection mouth 112 annular in shape, one is additionally provided with pedestal 11 and is gone out with reaction gas collection mouth 112 and the extraneous reaction gas communicated
Air flue 143, on the lower surface of pedestal 11 in the periphery of reaction gas collection mouth 112 be provided with it is one annular in shape, for detaching air so that anti-
Should gas be additionally provided with a vacuum communicated with the vacuum exhaust nozzle 113 by the vacuum exhaust nozzle 113 of vacuum insulation, on pedestal 11 and take out
Air flue 144；The reaction gas distribution ring 14 is provided with multiple circumferentially distributed, grooves 1412 for being communicated with the annular air channel 141,
The size of the groove 1412 becomes larger along the direction that reaction gas flows.
The operation principle of above-mentioned ultra-thin reaction chamber 10：
The projection process of laser beam：As shown in figure 1, the laser beam as caused by lasing light emitter, first through lens group, then, according to
The secondary endoporus of reaction gas distribution ring 14, the reaction gas spout 131 of jet element 13 through in diaphragm 12, reacting hole 111, finally
It is projeced on the work surface 20 of photomask workpiece, laser beam is in being projected to a round dot on work surface 20.
The flow process of reaction gas：As shown in figure 1, reaction gas is first entered inside pedestal 11 by reaction gas air intake duct 142, then
Annular air channel 141 is flowed through, then, reactive gas current is divided into two-way, and is flowed along annular air channel 141, via circumferentially distributed
The center outflow of the orientating reaction gas distribution ring 14 of groove 1412, and flow to reaction gas spout 131.Finally, reactive gas current is surround
In laser beam surrounding, sprayed by reaction gas spout 131 on the work surface 20 of photomask workpiece, i.e. reactive gas current court
The surrounding injection of laser beam round dot on to work surface 20；
In the case where laser beam heats up to work surface 20, reaction gas chemically reacts with work surface 20,
Repair procedure is carried out to work surface 20, and participates in the reaction gas after reaction and is received via the reaction gas on the lower surface of pedestal 11
Collect mouth 112, import reaction gas gas off-take 143, be discharged to from reaction gas gas off-take 143 in the external world；Because reaction gas collection mouth 112 is in
Ring-type is surrounded on the periphery of the lower surface reacting hole 111 of pedestal 11, that is, is surrounded on the surrounding of reaction gas spout 131, therefore, reaction gas
After being chemically reacted with work surface 20, it will be collected by reaction gas collection mouth 112, be discharged via reaction gas gas off-take 143；
In addition, as shown in figure 1, the periphery of reaction gas collection mouth 112 is provided with vacuum exhaust nozzle 113 annular in shape, vacuum is taken out
Valve 113 detaches the periphery gas of reaction gas collection mouth 112, and gas is discharged from vacuum suction road 144, so, vacuum
The periphery of air exhaust nozzle 113 will form the vacuum insulation band of ring-type, then diaphragm 12 to closed, the diaphragm of the upside of reacting hole 111
12nd, reacting hole 111 and vacuum insulation band will form a confined space, and reaction gas is reacted in the confined space, and is only passed through
The confined space is entered by reaction gas air intake duct 142, the confined space is discharged via reaction gas gas off-take 143.
The ultra-thin reaction chamber 10 that the present embodiment provides compares the beneficial effect of prior art：
As shown in Figure 1 to Figure 3, above-mentioned ultra-thin reaction chamber 10 includes pedestal 11, is equipped with reacting hole 111 on pedestal 11, instead
The hole inner underside in hole 111 is answered to be provided with jet element 13 and reaction gas distribution ring 14, reaction gas distribution ring 14 offers an annular gas
Road 141, a reaction gas air intake duct 142, a reaction gas gas off-take 143 and a vacuum suction road 144, pedestal are additionally provided with pedestal 11
11 lower surfaces are provided with a vacuum exhaust nozzle 113 of reaction gas collection mouth 112 and one annular in shape.Due to reaction gas distribution ring 14 with
Jet element 13 is detachably connected, and is closely sticked, without using the connection such as screw, nut so that reaction gas distribution ring 14 and spray
The overall thickness of nozzle component 13 diminishes；Also, due to only setting 142, reaction gases of a reaction gas air intake duct on pedestal 11
Gas off-take 143 and a vacuum suction road 144, therefore, on pedestal 11 it is used to set reaction gas air intake duct 142, reaction gas outlet
The space in road 143 and vacuum suction road 144 will diminish, so, the thickness overall beneficial to pedestal 11 is reduced so that ultra-thin reaction chamber
10 gross thickness is thinner, can be applied under the lens group that resolution ratio is higher, operating distance is shorter, anti-to improve laser Gaseous chemistry
The localization precision answered, that is, make it that the laser beam Jing Guo said lens group is smaller in projecting round dot diameter on work surface 20, from
And it is set to repair the defects of more tiny.
In addition, as shown in figure 1, because reaction gas distribution ring 14 is provided with multiple grooves 1412, multiple grooves 1412 and ring
Shape air flue 141 communicates, and circumferentially distributed, so, when reaction gas enters annular air channel 141 by reaction gas air intake duct 142, reaction
Gas air-flow is divided into two-way, and is flowed along annular air channel 141, finally, via the circumferentially distributed orientating reaction qi leel of groove 1412
Center outflow with ring 14, and flow to reaction gas spout 131.Due to the center of laser beam transparent distribution of air flow ring 14, therefore, instead
Should gas air-flow be surrounded on laser beam surrounding, sprayed by reaction gas spout 131 on the work surface 20 of photomask workpiece, i.e.,
Surrounding injection of the reactive gas current towards laser beam round dot on work surface 20.
Importantly, because gradual diminuendo, throughput are gradually reduced by reactive gas current on the direction that it flows, because
This, uneven in order to reduce the throughput that each groove 1412 flows out in annular air channel 141, the size of groove 1412 is along reaction gas flow
Become larger on dynamic direction, so, the groove 1412 of rear end, is strengthened by increasing its size on air current flow direction
Throughput, so as to balance the reactive gas current amount from the outflow of each groove 1412.Therefore pass through each groove 1412 of reaction gas distribution ring 14
Adjustment effect, reacting gas uniformly, stably by reaction gas spout 131 and sprays the work surface of photomask workpiece
On 20, the efficiency of laser chemistry gas phase reaction can be improved.Regardless of whether laser beam is accurately passed through in reaction gas spout 131
The heart, if the defects of being accurately aimed at work surface 20 region, reaction gas can be evenly distributed centered on laser beam round dot
Come, in the deposition on work surface 20 also more uniformly, therefore, above-mentioned ultra-thin reaction chamber 10 is to reaction gas in treating for reaction gas
Deposition direction and laser beam on finished surface 20 in the transmission position on reaction gas spout 131 and work surface 20 not
Sensitivity, the yields of its repair products are largely increased.
It should be noted that as shown in figure 1, reaction gas distribution ring 14 uses contact with jet element 13, detachably connected
Connect.Compare using the connection such as screw or glue, it can facilitate dismounting, separation and adjustment etc. from pedestal 11.
As shown in figures 1 and 3, because vacuum exhaust nozzle 113 detaches the periphery gas of reaction gas collection mouth 112, and will
Gas is discharged from vacuum suction road 144 so that the periphery of vacuum exhaust nozzle 113 will be formed ring-type vacuum insulation band, and in order to
Strengthen the effect that air supplement is carried out to vacuum insulation band, pedestal 11 is provided with a static air air intake duct 145, the following table of pedestal 11
On face static air flow nipple that is one annular in shape, being communicated with static air air intake duct 145 is provided with the periphery of vacuum exhaust nozzle 113
114.So, static air will be entered inside pedestal 11 by static air air intake duct 145, and be flowed by static air flow nipple 114
To work surface 20, because static air flow nipple 114 is annular in shape, therefore, static air flow nipple 114 will be to vacuum insulation
Band circularizes supply；Importantly, static air air intake duct 145 is located at pedestal 11 along height side with reaction gas air intake duct 142
To same section on, so, advantageously reduce the overall thickness of pedestal 11 so that ultra-thin reaction chamber 10 can be applied to resolution ratio
Under lens group higher, operating distance is shorter, to improve the localization precision of laser Gaseous chemical reaction, i.e., by said lens group
Laser beam on work surface 20 project round dot diameter it is smaller, it is repaired the defects of more tiny.
In order to reduce the overall thickness of pedestal 11, the thickness of diaphragm 12 is less than or equal to 3.0mm.
As shown in figure 1, due to reaction gas on the lower surface of diaphragm 12 deposition can pollute transparent diaphragm 12 so that swash
Light beam is difficult to pass through diaphragm 12, influences the use of above-mentioned ultra-thin reaction chamber 10, and therefore, pedestal 11 is provided with the lower section of diaphragm 12
One conveys the protection gas air intake duct 146 and protection gas gas off-take 147 of protection gas toward the lower surface of diaphragm 12.So, protect gas first
After flow through protection gas air intake duct 146, the lower surface of diaphragm 12 and protection gas gas off-take 147, and because the lower surface of diaphragm 12 is covered
Protection gas is stamped, which obviates and is directly contacted with reaction gas, therefore, above-mentioned ultra-thin reaction chamber 10 avoids reaction gas pollution window
The problem of piece 12.
It should be noted that protection gas is nitrogen etc.；Reaction gas air intake duct 142 enters with reaction gas gas off-take 143, protection gas
Air flue 146 is arranged at pedestal 11 along the same layer cross section of short transverse with protection gas gas off-take 147；And reaction gas air intake duct
142nd, vacuum suction road 144, static air air intake duct 145 and protection gas air intake duct 146 are in staggered distribution in pedestal 11 along height respectively
Spend on the different layer cross sections in direction.
Preferred embodiment of the present embodiment on the specific constructive form of reacting hole 111, as depicted in figs. 1 and 2, reacting hole
111 be shoulder hole 1111, and shoulder hole 1111 includes higher level's step 1112 and subordinate's step positioned at the lower section of higher level's step 1112
1113, jet element 13 is overlapped on subordinate's step 1113, and diaphragm 12 is overlapped on higher level's step 1112.So, by dividing
Jet element 13 and diaphragm 12 are not overlapped on subordinate's step 1113 and higher level's step 1112, avoided using screw, nut
It is fixed Deng part, avoid increases the integral thickness of above-mentioned ultra-thin reaction chamber 10 due to screw, nut thickness in itself
The problem of.
As shown in Figure 1 to Figure 3, it is excessive in order to avoid the motion state change of reaction gas, the flow resistance of reaction gas is reduced,
And causing reaction gas spout 131 to spray reaction gas towards certain angle, the shape of reaction gas spout 131 is tapered, reaction gas distribution ring
14 endoporus is provided with mutually suitable, hollow tapered round platform 1411, round platform 1411 are attached at reaction gas with the shape of reaction gas spout 131
In spout 131.So, reactive gas current first is flowed out via each groove 1412 in annular air channel 141, and along tilt conical surface direction
The work surface 20 of photomask workpiece sprays.
As shown in figure 1, in order to ensure temperature that reaction gas is chemically reacted, the upper surface of pedestal 11 is covered with producing heat
Heating film 15.So, heating film 15 pedestal 11 will be heated, the pedestal 11 under the condition of high temperature by heat again
Reaction gas is conducted to, ensures being normally carried out for reaction gas chemical reaction, improves the efficiency of laser Gaseous chemical reaction.
In order to prevent reacting gas leakage and stationary window piece 12, heat and be provided with packing ring between film 15 and diaphragm 12
16。
In order that above-mentioned ultra-thin reaction chamber 10 can be in the to be added of lens group and the photomask workpiece of shorter operating distance
Worked between work surface 20, the gross thickness of ultra-thin reaction chamber 10 is less than or equal to 9.0mm.
These are only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
All any modification, equivalent and improvement made within principle etc., should be included in the scope of the protection.
Claims (8)
1. ultra-thin reaction chamber, repaired for laser Gaseous chemical deposition, it is characterised in that：Including pedestal, worn on the pedestal
There is a reacting hole, upside, which is provided with, in the hole of the reacting hole is used to cover the reacting hole and transparent diaphragm, and downside is provided with spray
Nozzle component, the jet element are equipped with reaction gas spout, and the upper surface of the jet element is removably connected with reaction qi leel
With ring, the endoporus of the reaction gas distribution ring is relative with the reaction gas spout, is available for laser beam to pass through；The reaction gas distribution
Ring offers an annular air channel communicated with the reaction gas spout, what the pedestal communicated provided with one with the annular air channel
Reaction gas air intake duct, a reaction gas collection mouth annular in shape, institute are provided with the periphery of the reacting hole on the pedestal lower surface
State and one and the reaction gas collection mouth and the extraneous reaction gas gas off-take communicated be additionally provided with pedestal, on the pedestal lower surface in
The periphery of the reaction gas collection mouth be provided with it is one annular in shape, for detaching air so that reaction gas is by the vacuum suction of vacuum insulation
Mouth, a vacuum suction road communicated with the vacuum exhaust nozzle is additionally provided with the pedestal；The reaction gas distribution ring is provided with
Multiple circumferentially distributed, grooves for being communicated with the annular air channel, the direction that the size of the groove flows along reaction gas gradually becomes
Greatly；The reaction gas distribution ring is additionally provided with the outer surface for the taper portion that the reaction gas distribution ring is communicated and be exposed to the groove
The second annular air channel；
The shape of the reaction gas spout is tapered, and the endoporus of the reaction gas distribution ring is provided with and the reaction gas nozzle configuration
Xiang Shi, hollow tapered round platform, the round platform are attached in the reaction gas spout, the outer surface of the round platform with it is described anti-
Answer and be parallel to each other between the inner surface of gas blowout mouth.
2. ultra-thin reaction chamber as claimed in claim 1, it is characterised in that：The pedestal is provided with a static air air intake duct,
Annularly, with the static air air intake duct communicated provided with one in the periphery of the vacuum exhaust nozzle on the pedestal lower surface
Static air flow nipple.
3. ultra-thin reaction chamber as claimed in claim 1, it is characterised in that：The thickness of the diaphragm is less than or equal to 3.0mm.
4. ultra-thin reaction chamber as claimed in claim 1, it is characterised in that：It is past that the pedestal is provided with one below the diaphragm
The diaphragm lower surface conveying protects gas to avoid reaction gas in the protection gas air intake duct deposited on the diaphragm lower surface
And protection gas gas off-take.
5. ultra-thin reaction chamber as claimed in claim 1, it is characterised in that：The reacting hole is shoulder hole, the shoulder hole bag
Higher level's step and subordinate's step below higher level's step are included, the jet element is overlapped on subordinate's step,
The diaphragm is overlapped on higher level's step.
6. ultra-thin reaction chamber as claimed in claim 1, it is characterised in that：The pedestal upper surface is covered with producing heat to protect
Demonstrate,prove the heating film of reaction gas reaction temperature.
7. ultra-thin reaction chamber as claimed in claim 6, it is characterised in that：It is provided between the heating film and the diaphragm
For preventing from reacting the packing ring of gas leakage.
8. the ultra-thin reaction chamber as described in any one of claim 1~7, it is characterised in that：The gross thickness of the ultra-thin reaction chamber
Less than or equal to 9.0mm.
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| CN201510013868.XA CN104561939B (en) | 2015-01-12 | 2015-01-12 | Ultra-thin reaction chamber |
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| CN201510013868.XA CN104561939B (en) | 2015-01-12 | 2015-01-12 | Ultra-thin reaction chamber |
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| CN104561939A CN104561939A (en) | 2015-04-29 |
| CN104561939B true CN104561939B (en) | 2017-11-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101533033B1 (en) * | 2015-01-16 | 2015-07-02 | 성균관대학교산학협력단 | Thin film depositing method of ultra-slim structure, and depositing apparatus therefor |
| CN107012446B (en) * | 2015-11-11 | 2019-09-17 | 灿美工程股份有限公司 | Precipitation equipment and deposition method |
| KR101876961B1 (en) * | 2017-03-14 | 2018-07-10 | 주식회사 에이치비테크놀러지 | Thin film forming apparatus |
| KR101876963B1 (en) * | 2017-03-14 | 2018-07-10 | 주식회사 에이치비테크놀러지 | Thin film forming apparatus |
| KR101876960B1 (en) * | 2017-03-14 | 2018-07-10 | 주식회사 에이치비테크놀러지 | Thin film forming apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1375575A (en) * | 2001-03-19 | 2002-10-23 | 株式会社Apex | Chemical vapor depositing apparatus |
| TWI303084B (en) * | 2000-09-08 | 2008-11-11 | Tokyo Electron Ltd | Shower head structure, film forming method, and gas processing apparauts |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业***株式会社 | Film formation device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009302324A (en) * | 2008-06-13 | 2009-12-24 | Tokyo Electron Ltd | Gas ring, semiconductor substrate processing device, and semiconductor substrate processing method |
| CN201236208Y (en) * | 2008-09-24 | 2009-05-13 | 清溢精密光电（深圳）有限公司 | Air-float type reaction cavity |
| KR101896607B1 (en) * | 2010-10-19 | 2018-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Quartz showerhead for nanocure uv chamber |
| CN204474758U (en) * | 2015-01-12 | 2015-07-15 | 深圳清溢光电股份有限公司 | Ultra-thin reaction chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI303084B (en) * | 2000-09-08 | 2008-11-11 | Tokyo Electron Ltd | Shower head structure, film forming method, and gas processing apparauts |
| CN1375575A (en) * | 2001-03-19 | 2002-10-23 | 株式会社Apex | Chemical vapor depositing apparatus |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业***株式会社 | Film formation device |
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