CN104550975B - Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding - Google Patents
Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding Download PDFInfo
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- CN104550975B CN104550975B CN201510054970.4A CN201510054970A CN104550975B CN 104550975 B CN104550975 B CN 104550975B CN 201510054970 A CN201510054970 A CN 201510054970A CN 104550975 B CN104550975 B CN 104550975B
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 25
- 238000004100 electronic packaging Methods 0.000 title claims abstract description 15
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title abstract 7
- 239000005022 packaging material Substances 0.000 title abstract 4
- 238000001746 injection moulding Methods 0.000 title abstract 3
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000011230 binding agent Substances 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 15
- 238000012856 packing Methods 0.000 claims description 15
- 238000007493 shaping process Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 5
- 235000013312 flour Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 4
- 238000010298 pulverizing process Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000000956 alloy Substances 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000003754 machining Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000003801 milling Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 230000005484 gravity Effects 0.000 abstract 1
- 238000000227 grinding Methods 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910000551 Silumin Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Abstract
The invention relates to a method for preparing a silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding. The silicon-aluminum alloy comprises the following components in percentage by weight: 10%-60% of Si and the balance of Al. The method comprises the following steps of preparing according to the components of the alloy, mixing the prepared silicon-aluminum alloy powder and a binder at a certain ratio in an internal mixer to obtain a uniform compound feedstock, carrying out injection molding on the feedstock to obtain a green body, removing the binder from the green body and sintering to obtain the silicon-aluminum alloy electronic packaging material of which the relative density is greater than 99%. The silicon-aluminum alloy material has the advantages of uniform alloy components and uniform and dense microstructures and can be prepared into the silicon-aluminum alloy electronic packaging material which has continuously adjustable thermal expansion coefficient range of (6-12)*10＜-6＞/K, the thermal conductivity range of 110-150W/mK and the specific gravity of 1.7-2.6g/cm＜3＞ and complex and diversiform structure, the complicated machining processes such as lathing, milling, planing and grinding are avoided and the method has the advantages of high production efficiency, simple process, low cost, excellent product performance and the like.
Description
Technical field
The present invention relates to aluminium silicon electronic packing material field is and in particular to sial conjunction is prepared in a kind of fast injection shaping
The method of golden electronic package material.
Background technology
The development of 21st century science and technology, especially prominent performance is exactly the development of electronic science and technology.With electricity
Sub- components and parts are towards smaller, quality is lighter, the faster direction of arithmetic speed is developed and large scale integrated circuit technology
Fast development, the integrated level of ic chip and packaging density significantly improve, and electronic package material is also accordingly proposed with higher wanting
Ask.Electronic Packaging directly affects electric, hot, light and the mechanical performance of integrated circuit and device, and the miniaturization to system plays pass
The effect of key, therefore it is required that electronic package material has low-expansion coefficient, low-density, high heat conductance and mechanical performance, must simultaneously
Must have good packaging technology performance, and high reliability and low cost.Thus traditional electronic package material such as aluminum oxide
Pottery, low-expansion alloy such as kovar, beryllium oxide ceramics, aluminium nitride and refractory metal w, mo and its composite etc. are not
Adapt to modern advanced microwave and the encapsulation of hybrid circuit technology requires, or it is short all to there is high cost, resource to varying degrees
Lack, the shortcomings of toxicity is big, processability is bad.
, as a kind of novel encapsulated material, it is low to have low thermal coefficient of expansion, high thermal conductivity, proportion, does not have for silico-aluminum
Toxicity, relatively low material cost, and easy to process, can electroplate, disclosure satisfy that aerospace equipment and movement, calculating simultaneously
The light-weighted requirement of communication apparatus, can be widely used for large scale integrated circuit encapsulation or as other microelectronic circuits and
The encapsulating material of microwave line.
The preparation method of the routine of aluminium silicon electronic packing material has melting and casting method, infiltration method, powder metallurgy at present
Method, spray-up method and quick pressure sintering etc., but these methods all have equipment cost height, process time to varying degrees
Length, forming difficulty, technique are wayward and are difficult to the deficiencies such as industrialized production, and also there is prefabricated component in some methods can not
Be impregnated with completely, the defect such as microstructure is uneven, interface occurs chemical reaction and prepared material structure is single.In patent
The method for silumin electronic package materials by quick hot pressing is disclosed, the method is lazy in cn102094142a
Property gas shield under conditions of, by powder load mould in, pressurization while heating, become product through hot compression deformation, exist
Equipment requirement is high, high cost, and product is single block, the bar-shaped or tabular of structure, and the method cannot be used for preparation structure essence
Close and complicated product；Low-density low-expansion coefficient high heat conductance silico-aluminum package material is reported in patent cn1531072a
Material and preparation method, it combines jet deposition densification technique and heat and other static pressuring processes or traditional heat pressing process, and its technique is deposited
Equipment cost height, process time length, Composition Control are difficult and be difficult to industrialized production, and powder stock requires high deficiency；
Disclose a kind of method of spraying and depositing high silicon aluminium alloy in patent cn1345983a, it passes through spray deposition technique, and plus
Enter fe, mn element and obtain metastable silumin, the method has technological parameter complexity, relatively costly, the half of preparation
Finished product porosity is larger, needs the shortcomings of carry out secondary operation.So, seek that a kind of new technology and equipment requirement are simple, produce
Efficiency high, low cost and resulting product have the advantages that high fine and close, high-performance and are able to batch the preparation method of production, with reality
Existing aluminium silicon electronic packing material commercial application is extremely critical.
Content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the purpose of the present invention is all providing a kind of fast injection shaping to prepare silicon
The method of aluminium alloy electronic package material, by weight percentage, silico-aluminum ingredient s i are 10%～60%, al is surplus,
By alloying component dispensing, the silicon aluminium alloy powder preparing is obtained uniformly feeding with binding agent mixing in banbury according to a certain ratio
Material, uses fast injection forming technique, obtain alloying component uniformly, all even densification of microscopic structure, low thermal coefficient of expansion, highly thermally conductive
The various aluminium silicon electronic packing material of rate, complex structure, and thermal coefficient of expansion and thermal conductivity all may be used within the specific limits
Adjust, this can according to encapsulation matching materials difference come careful design needed for alloy formula, make both thermal coefficient of expansions complete
Coupling, to reach the target of zero stress encapsulation and to adjust thermal conductivity to meet the needs of ic chip high intensity radiating.Meanwhile, this
Preparation method process is simple, production efficiency height, low cost, controllability and reproducible, be able to batch production and avoid turnning and milling
The loaded down with trivial details machining operation such as plane mill.
In order to solve above technical problem, aluminium silicon electronic packing material is prepared in a kind of fast injection shaping of the present invention
Method, described preparation method is using the fast injection method of forming；Selection process is: by weight than the si for 10%～60% and
40%～90% al makes silicon aluminium alloy powder；By silicon aluminium alloy powder and a certain amount of binding agent 100～230 DEG C on banbury
At a temperature of the feeding that is uniformly mixed after mixing 0.5～4h；Feeding through pulverizing after in injector in 90～220 DEG C of temperature,
60～110mpa pressure, through the shaping of 2～25s time fast injection, obtains the base substrate of corresponding construction；Base substrate is carried out removing viscous
After knot agent, in 500～650 DEG C of temperature, heating rate is 120～300 DEG C/h, is sintered under vacuum condition, and temperature retention time is 1
～5h, obtaining relative density is 97%～99%.
Present invention also offers the silico-aluminum electronic packaging composite material that a kind of said method prepares, described compound
The silico-aluminum composite feeding that material is uniformly mixed to prepare by silica flour and aluminium powder and appropriate binding agent, notes through quick
Penetrate moulding process and heat treatment sintering forms, its thermal coefficient of expansion is 6～12 × 10-6/ k, thermal conductivity is 110～150w/mk, resists
Tensile strength is 120～165mpa, and elastic modelling quantity is 70～112gpa, and it can be used for Aero-Space, electronics, computer, communication etc.
The encapsulating material of the microelectronic circuits in field and microwave line and the Electronic Packaging of large scale integrated circuit.
Preferably, the particle diameter of described silicon aluminium alloy powder is 5～50 μm.The thermal expansion of described aluminium silicon electronic packing material
Coefficient is 6～12 × 10-6/k, and pyroconductivity is 110～150w/mk, and tensile strength is 120～165mpa, and elastic modelling quantity is 70
～112gpa；The thermal coefficient of expansion of described aluminium silicon electronic packing material is 8 × 10-6/ k, pyroconductivity is 120w/mk, resists
Tensile strength is 150mpa, and elastic modelling quantity is 80gpa；The thermal coefficient of expansion of more preferably described aluminium silicon electronic packing material is 10
×10-6/ k, pyroconductivity is 140w/mk, and tensile strength is 155mpa, and elastic modelling quantity is 100gpa.
The present invention also provides the concrete application of above-mentioned material, micro- for Aero-Space, electronics, computer or the communications field
Electronic circuit and the encapsulation of microwave line.Can be additionally used in the Electronic Packaging of integrated circuit.
The present invention compared with prior art, has advantages below or a characteristic:
(1) material low thermal coefficient of expansion (6～12 × 10-6/ k), high heat conductance (110～150w/mk) and in the range of this
Adjustable, this can according to encapsulation matching materials difference come careful design needed for alloy formula, make both thermal expansion systems
Count up to full coupling, to reach the target of zero stress encapsulation and to adjust thermal conductivity to meet the needs of ic chip high intensity radiating.
(2) low (1.7～2.6g/cm of alloy proportion3), intensity is high, specific stiffness is big, on the premise of meeting heat sinking function,
Can reach small volume, lightweight effect, disclosure satisfy that aerospace equipment and movement, calculate the light-weighted requirement of communication apparatus
Developing direction with adapting to modern electronic product, and is also applied for the modern aerospace work such as aviation electronics and spacecraft
Industry in the urgent need to.
(3) the inventive method can be obtained the electronic packaging composite material of the various near-net-shape of complex structure and avoid car
The loaded down with trivial details machining operation such as milling mill, material can be used for the microelectronics in the fields such as Aero-Space, electronics, computer, communication
The encapsulating material of circuit and microwave line and the Electronic Packaging of large scale integrated circuit.
(4) the inventive method process is simple, production efficiency height, low cost, process control and reproducible, be able to batch
Produce.
(5) compared to prior art, such as cn1345983a, the performance of product is not only lost, and more preferably, performance
More excellent, specifically can be found in tables of data 1.
Innovatively use silicon aluminium alloy powder, the silico-aluminum electronic seal being obtained by the fast injection method of forming through inventor
Dress composite, the method is without interpolation the third powder any other, and the excellent product performance obtaining, complex structure
Various, avoid the machining process of postorder simultaneously and saved raw material, be the compound of gained through inventor's repetition test
Material has the characteristics that in table 1 below performance, has the unforeseeable technique effect of those skilled in the art.
Brief description
Fig. 1 is the electron microscope of gained silicon aluminium alloy powder in the embodiment of the present invention 1；
Fig. 2 is the electron microscope of gained silicon aluminium alloy powder in the embodiment of the present invention 2；
Fig. 3 is the electron microscope of the cross section of gained silico-aluminum electronic packaging composite material in the embodiment of the present invention 3.
Specific embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are illustrated, but described herein be preferable to carry out being only used for
The description and interpretation present invention, is not intended to limit the present invention.
Embodiment 1
A kind of method that aluminium silicon electronic packing material is prepared in fast injection shaping, below step: weight ratio is
60% silica flour and 40% aluminium powder are uniformly mixed and made into the silicon aluminium alloy powder that granularity is 50 μm, such as Fig. 1；By silicon aluminium alloy powder with
The feeding being uniformly mixed after mixing 2h at a temperature of 190 DEG C on banbury of a certain amount of binding agent；Feeding is after pulverizing
In injector in 180 DEG C of temperature, 110mpa pressure, through the shaping of 25s time fast injection, obtain the base substrate of corresponding construction；Will
After base substrate carries out heat removing binding agent, in 650 DEG C of temperature, heating rate is 300 DEG C/h, is sintered under vacuum condition, insulation
Time is 5h, obtains the silico-aluminum electronic packaging composite material that relative density is 97%.
Embodiment 2
A kind of method that aluminium silicon electronic packing material is prepared in fast injection shaping, below step: weight ratio is
Make, after 10% silica flour and the uniform mixing of 90% aluminium powder, the silicon aluminium alloy powder that granularity is 5 μm, such as Fig. 2；By silicon aluminium alloy powder
With the feeding being uniformly mixed after mixing 0.5h at a temperature of 140 DEG C on banbury of a certain amount of binding agent；Feeding is through powder
In injector in 155 DEG C of temperature, 60mpa pressure after broken, through the shaping of 2s time fast injection, obtain the base substrate of corresponding construction；
Base substrate is carried out after heat removing binding agent, in 550 DEG C of temperature, heating rate is 120 DEG C/h, is sintered under vacuum condition, protects
The warm time is 1h, obtains the silico-aluminum electronic packaging composite material that relative density is 98%.
Embodiment 3
A kind of method that aluminium silicon electronic packing material is prepared in fast injection shaping, below step: weight ratio is
40% silica flour and 60% aluminium powder make granularity for 25 μm of silicon aluminium alloy powders；Silicon aluminium alloy powder and a certain amount of binding agent are existed
The feeding being uniformly mixed after mixing 1h at a temperature of 175 DEG C on banbury；Feeding through pulverizing after in injector in 173 DEG C of temperature
Degree, 90mpa pressure, through the shaping of 5s time fast injection, obtain the base substrate of corresponding construction；Base substrate is carried out heat removing binding agent
Afterwards, in 580 DEG C of temperature, heating rate is 200 DEG C/h, is sintered under vacuum condition, and temperature retention time is 3h, obtains relative density
Silico-aluminum electronic packaging composite material for 99%, such as Fig. 3.
The structure of above-described embodiment 1-3 is shown in Fig. 1-3, and for its product structure, raw material, processing method, relatively
Density and tensile strength and elastic modelling quantity etc. are listed in Table 1 below, and compared with prior art, the present invention achieves unforeseeable technology
Effect.
The performance of table 1 composite of the present invention
Above-described embodiment is only the preferred of the present invention, is not used for limiting the present invention, and above example readily appreciates this
Invention preparation method is with properties of product trend on technical arrangement plan, so that those skilled in the art can clearly grasp the present invention
The innovation essence of technical scheme, not only proposes the embodiment limiting in function or properties of product.So removing above-mentioned enforcement
Exception, the present invention can also have other embodiment.All employing equivalents or the technical scheme of equivalent exchange formation, all fall within
The protection domain of application claims.
Claims (4)
1. a kind of fast injection shaping prepare aluminium silicon electronic packing material method it is characterised in that: silico-aluminum electronics
Encapsulating material adopts the fast injection method of forming to prepare, specifically comprises the processes of: by weight than the silica flour for 10%～60% and 40%～
90% aluminium powder makes silicon aluminium alloy powder；By silicon aluminium alloy powder and a certain amount of binding agent 100～230 DEG C of temperature on banbury
The feeding being uniformly mixed after lower mixing 0.5～4h；Described feeding through pulverizing after in injector in 90～220 DEG C of temperature,
40～120mpa pressure, through the shaping of 1～30s time fast injection, obtains the base substrate of corresponding construction；Described base substrate is carried out heat
After removing binding agent, in 500～650 DEG C of temperature, heating rate is 120～300 DEG C/h, is sintered under vacuum condition, insulation
Time is 1～5h, obtains the described aluminium silicon electronic packing material that relative density is 97%～99%；Described silico-aluminum electricity
The thermal coefficient of expansion of sub- encapsulating material is 8 × 10-6/ k, pyroconductivity is 120w/mk, and tensile strength is 150mpa, elastic modelling quantity
For 80gpa.
2. method according to claim 1 it is characterised in that: the particle diameter of described silicon aluminium alloy powder be 5～50 μm.
3. according to claim 1 method be obtained aluminium silicon electronic packing material application it is characterised in that: described material
Expect the encapsulation of microelectronic circuits for Aero-Space, electronics, computer or the communications field and microwave line.
4. according to claim 3 application it is characterised in that: described material be used for integrated circuit Electronic Packaging.
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| CN106676333B (en) * | 2016-12-09 | 2018-07-17 | 北京有色金属研究总院 | A kind of radiation hardening high-thermal conductivity electronic packaging material |
| CN107739920B (en) * | 2017-09-21 | 2019-11-19 | 东莞华晶粉末冶金有限公司 | Aluminum alloy materials, Al-alloy products and preparation method thereof |
| CN108213409A (en) * | 2018-01-17 | 2018-06-29 | 河北中瓷电子科技有限公司 | The preparation method of kovar alloy wall used for electronic packaging |
| CN113210609A (en) * | 2021-04-14 | 2021-08-06 | 中国电子科技集团公司第二十九研究所 | Integrated microwave box body packaging method with locally adjustable thermal expansion coefficient |
| CN114134373A (en) * | 2021-11-16 | 2022-03-04 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy packaging material with high tensile strength and preparation method thereof |
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