CN104539243B - The position read out device of gamma rays and the position read-out system of gamma rays - Google Patents
The position read out device of gamma rays and the position read-out system of gamma rays Download PDFInfo
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Abstract
The invention discloses a kind of position read out device of gamma rays and the position read-out system of gamma rays, wherein, the position read out device of gamma rays includes：Signal processing module, signal processing module is used to handle the current signal of SSPM gamma ray detectors output, and output amplitude discriminator signal and gate output signal；Module is screened, module is screened and is used to screen amplitude discriminator signal according to preset signals, and export the first control signal and the second control signal；Switch module, switch module are used to close corresponding switch according to the first control signal and the second control signal to export gate output signal.The position read out device of the gamma rays of the present invention can be realized and only gate SSPM gamma ray detectors array element of the current signal higher than preset signals, influence of the dark noise to detector position resolution ratio is greatly reduced, have greatly expanded application of the SSPM detectors in gamma detection.
Description
Technical field
The present invention relates to gamma ray detection technical field, the position read out device and one of more particularly to a kind of gamma rays
The position read-out system of kind gamma rays.
Background technology
In PET, (Positron Emission Compute3Tomography, PET-Positron emission computed tomography show
Picture) etc. in nuclear medicine imaging system, generally require to detect the position such as direction of gamma rays, and gal is determined by rebuilding
The distributed image of agate radiographic source.When being detected to gamma rays, the positional precision of gamma rays will directly affect image most
Whole resolution ratio.Generally, PET imaging devices detect the position of gamma rays, gamma ray detection using gamma ray detectors
Device is mainly made up of scintillation crystal and electrooptical device.Specifically, gamma rays is converted into wavelength in scintillation crystal to exist
After passage of scintillation light in the range of 300-600nm, passage of scintillation light is converted into current signal by electrooptical device, and then is exported to follow-up
Reading circuit is handled.Because the cutting and light splitting of scintillation crystal can cause what the electrooptical device of diverse location was collected
Blinking light is different, and the current signal of electrooptical device output is also different, and therefore, reading circuit can be according to difference
The proportionate relationship of the current signal of electrooptical device output determines the position of gamma rays.At present, reading circuit is generally logical
Cross one-dimensional or two-dimentional resistor network and carry out shunting summation come the current signal exported to different gamma ray detectors, so as to
To the signal directly proportional to the position of gamma rays.Now, the position resolution of gamma ray detectors is mainly by gamma rays
The signal to noise ratio of detector and resistor network determines.
In correlation technique, the position resolution of gamma ray detectors is mainly improved using following two schemes.Wherein,
In scheme one, the electrooptical device in gamma ray detectors is using PMT (Photo Multiplier Tube, photoelectricity times
Increase pipe), current signal can be amplified 10 by PMT5~106Times, dark noise is small, and is passed through using PMT gamma ray detectors
Scintillation crystal is divided and resistor network reads the position resolution that can obtain 1mm magnitudes.In scheme two, gamma ray detection
Electrooptical device in device using occur in recent years SSPM (Soli3State Photoelectric Multiplier, Gu
State photomultiplier), it can also equally obtain very big current signal gain.SSPM gamma ray detectors are used generally with battle array
The form and scintillation crystal of row are coupled, and specifically, 1 SSPM gamma ray detectors module is generally by 8x8 or 12x12
SSPM gamma ray detectors array element forms, and the area of each SSPM gamma ray detectors array element is about
4mmx4mm。
Problems be present in the scheme one in correlation technique：PMT quantum efficiencies are relatively low, size is larger, to magnetic-field-sensitive.Though
Right SSPM can solve PMT disadvantages mentioned above, and still, SSPM dark noise is very big, such as 1 SSPM gamma rays at room temperature
The dark noise counting rate of detector array elements is up to 107, therefore, if directly by these SSPM gamma ray detectors arrays
The output signal of unit is summed using resistor network shunting, then the dark noise of all detector array elements can all be tired out
Add up so that position resolution degradation.In addition, SSPM dark noise is very sensitive to temperature, position resolution is also allowed for
Rate is very sensitive to temperature, now, will be unable to be accurately detected the position of gamma rays.
The content of the invention
The purpose of the present invention is intended at least solve one of above-mentioned technical problem to a certain extent.
Therefore, it is an object of the present invention to propose a kind of position read out device of gamma rays, the gamma rays
Position read out device can substantially reduce influence of the dark noise to SSPM gamma ray detectors position resolutions.
It is another object of the present invention to the position read-out system for proposing a kind of gamma rays.
To reach above-mentioned purpose, one aspect of the present invention embodiment proposes a kind of position read out device of gamma rays, should
The position read out device of gamma rays includes：Signal processing module, it is connected with the output end of SSPM gamma ray detectors, it is described
Signal processing module is used to handle the current signal of SSPM gamma ray detectors output, and output amplitude is screened
Signal and gate output signal；Module is screened, the first input end for screening module provides end with preset signals and is connected, described
The second input for screening module is connected with the first output end of the signal processing module, and the examination module is used for according to institute
State preset signals to screen the amplitude discriminator signal, and export the first control signal and the second control signal；And open
Close module, the first control terminal and the second control terminal of the switch module respectively with the first output end of the examination module and the
Two output ends are connected, and the input of the switch module is connected with the second output end of the signal processing module, the switch
Module is used for defeated to export the gating according to first control signal and the corresponding switch of second control signal closing
Go out signal.
The position read out device for the gamma rays that the embodiment of the present invention proposes, is penetrated by signal processing module to SSPM gammas
The current signal of line detector output is handled to generate amplitude discriminator signal and gate output signal, and then screens module root
Amplitude discriminator signal is screened according to preset signals to export the first control signal and the second control signal, final switch module
Gate output signal is exported according to the first control signal and the second control signal.The position read out device of the gamma rays can be with
Influence of the dark noise to detector position resolution ratio is substantially reduced, SSPM detectors is greatly extended and applies model in gamma detection
Enclose.
Further, in one embodiment of the invention, when the preset signals are predetermined current signal, the Zhen
Other module includes：Electric current discriminator, first input end and the preset signals of the electric current discriminator provide end and are connected, described
Second input of electric current discriminator is connected with the first output end of the signal processing module, and the electric current discriminator is used for root
According to the predetermined current signal and the amplitude discriminator signal generation discriminator signal；First monostable circuit submodule, described
One monostable circuit submodule is connected with the output end of the electric current discriminator, the output of the first monostable circuit submodule
The first output end as the examination module is held, the first monostable circuit submodule is used to give birth to according to the discriminator signal
Into first control signal of predetermined width；And first phase inverter, first phase inverter and first monostable electricity
The output end of way module is connected, and the output end of first phase inverter is described as second output end for screening module
First phase inverter is used to carrying out reversely first control signal and generating second control signal.
Further, in one embodiment of the invention, the signal processing module includes：First current source, it is described
The first end of first current source is connected with the output end of the SSPM gamma ray detectors；First PMOS transistor, described
The source electrode of one PMOS transistor is connected with the first end of first current source, and the grid of first PMOS transistor is with presetting
DC offset voltage provides end and is connected；First nmos pass transistor, the drain electrode of first nmos pass transistor and the first PMOS
The drain electrode of transistor is connected, and the drain electrode of first nmos pass transistor is connected with the grid of first nmos pass transistor；Second
Current source, the first end of second current source are connected with the second end of first current source；Second nmos pass transistor, it is described
The grid of second nmos pass transistor is connected with the grid of first nmos pass transistor, the drain electrode of second nmos pass transistor with
Second end of second current source is connected, the source electrode of the source electrode of second nmos pass transistor and first nmos pass transistor
It is connected, the drain electrode of second nmos pass transistor is connected with the second input of the electric current discriminator, and the 2nd NMOS is brilliant
First output end of the drain electrode of body pipe as the signal processing module；3rd current source, the first end of the 3rd current source
It is connected with the first end of second current source；And the 3rd nmos pass transistor, the grid of the 3rd nmos pass transistor and institute
The grid for stating the first nmos pass transistor is connected, the drain electrode of the 3rd nmos pass transistor and the second end phase of the 3rd current source
Even, the source electrode of the 3rd nmos pass transistor is connected with the source electrode of first nmos pass transistor, the 3rd nmos pass transistor
Second output end of the drain electrode as the signal processing module.
Further, in one embodiment of the invention, the signal processing module also includes：Low pass filter, institute
The one end for stating low pass filter is connected with the grid of first nmos pass transistor, the other end of the low pass filter with it is described
The grid of 3rd nmos pass transistor is connected, and the low pass filter is defeated for controlling the amplitude discriminator signal to be faster than the gating
Go out signal.
Further, in another embodiment of the present invention, when the SSPM gamma ray detectors are defeated including first
Go out end and the second output end, and the first current signal of the first output end output of the SSPM gamma ray detectors is faster than institute
When stating the second current signal of the second output end output of SSPM gamma ray detectors, the signal processing module includes：The
Four current sources, the first end of the 4th current source are connected with the first output end of the SSPM gamma ray detectors；4th
Nmos pass transistor, the source electrode of the 4th nmos pass transistor are connected with the first end of the 4th current source, the 4th NMOS
The grid of transistor provides end with predetermined DC bias voltage and is connected；Second PMOS transistor, second PMOS transistor
Drain electrode is connected with the drain electrode of the 4th nmos pass transistor, the drain electrode of second PMOS transistor and the 2nd PMOS crystal
The grid of pipe is connected；5th current source, the first end of the 5th current source are connected with the second end of the 4th current source；The
Three PMOS transistors, the grid of the 3rd PMOS transistor are connected with the grid of second PMOS transistor, and the described 3rd
The drain electrode of PMOS transistor is connected with the second end of the 5th current source, the source electrode of the 3rd PMOS transistor and described the
The source electrode of two PMOS transistors is connected, the drain electrode of the 3rd PMOS transistor and the second input phase of the electric current discriminator
Even, first output end of the drain electrode of the 3rd PMOS transistor as the signal processing module；6th current source, described
The first end of six current sources is connected with the second output end of the SSPM gamma ray detectors；4th PMOS transistor, it is described
The source electrode of 4th PMOS transistor is connected with the first end of the 6th current source, the grid of the 4th PMOS transistor and institute
Predetermined DC bias voltage offer end is stated to be connected；5th nmos pass transistor, the drain electrode of the 5th nmos pass transistor and described the
The drain electrode of four PMOS transistors is connected, the drain electrode of the 5th nmos pass transistor and the grid phase of the 5th nmos pass transistor
Even；7th current source, the first end of the 7th current source are connected with the second end of the 6th current source；And the 6th NMOS
Transistor, the grid of the 6th nmos pass transistor are connected with the grid of the 5th nmos pass transistor, and the 6th NMOS is brilliant
The drain electrode of body pipe is connected with the second end of the 7th current source, source electrode and the 5th NMOS of the 6th nmos pass transistor
The source electrode of transistor is connected, the second output end to drain as the signal processing module of the 6th nmos pass transistor.
Further, in one embodiment of the invention, the switch module includes：5th PMOS transistor, it is described
The drain electrode of 5th PMOS transistor is connected with the second output end of the signal processing module, the grid of the 5th PMOS transistor
Pole is connected with the first output end of the examination module, and the source electrode of the 5th PMOS transistor is as the defeated of the switch module
Go out end；6th PMOS transistor, the drain electrode of the 6th PMOS transistor and the second output end phase of the signal processing module
Even, the grid of the 6th PMOS transistor is connected with the second output end of the examination module；And the 7th PMOS transistor,
The drain electrode of 7th PMOS transistor is connected with the source electrode of the 6th PMOS transistor, the grid of the 7th PMOS transistor
Pole is connected with the drain electrode of the 7th PMOS transistor, the source ground of the 7th PMOS transistor.
Further, it is described when the preset signals are predeterminated voltage signal in yet another embodiment of the present invention
Screening module includes：Voltage discriminator, first input end and the preset signals of the voltage discriminator provide end and are connected, institute
State the second input of voltage discriminator with the first output end of the signal processing module to be connected, the voltage discriminator is used for
According to the predeterminated voltage signal and the amplitude discriminator signal generation discriminator signal；Second monostable circuit submodule, it is described
Second monostable circuit submodule is connected with the output end of the voltage discriminator, the second monostable circuit submodule it is defeated
Go out first output end of the end as the examination module, the second monostable circuit submodule is used for according to the discriminator signal
Generate first control signal of predetermined width；And second phase inverter, second phase inverter and second monostable
The output end of circuit submodule is connected, and the output end of second phase inverter is as second output end for screening module, institute
The second phase inverter is stated to be used to carrying out reversely first control signal and generating second control signal.
Further, in yet another embodiment of the present invention, the switch module includes：8th PMOS transistor, institute
The drain electrode for stating the 8th PMOS transistor is connected with the output end of the signal processing module, the grid of the 8th PMOS transistor
It is connected with the first output end of the examination module, the output of the source electrode of the 8th PMOS transistor as the switch module
End；And the 9th PMOS transistor, the drain electrode of the 9th PMOS transistor are connected with the source electrode of the 8th PMOS transistor,
The grid of 9th PMOS transistor is connected with the second output end of the examination module, the source of the 9th PMOS transistor
Pole is grounded.
Further, in yet another embodiment of the present invention, the signal processing module includes：First resistor, it is described
One end of first resistor is connected with the output end of the SSPM gamma ray detectors, the other end ground connection of the first resistor；
Second resistance, one end of the second resistance are connected with one end of the first resistor；Operational amplifier, the operational amplifier
Inverting input be connected with the other end of the second resistance, the output end of the operational amplifier is discriminated with the voltage respectively
Second input of other device is connected with the input of the switch module, and the operational amplifier is used to export width described in identical
Spend discriminator signal and the gate output signal；And 3rd resistor, one end of the 3rd resistor and the operational amplifier
Inverting input be connected, the other end of the 3rd resistor is connected with the output end of the operational amplifier.
Further, in one embodiment of the invention, it is described when the amplitude discriminator signal is less than preset signals
Discriminator signal is low level, and first control signal is the negative pulse of predetermined width, and second control signal is default width
The positive pulse of degree；And when the amplitude discriminator signal is higher than preset signals, the discriminator signal is high level, described first
Control signal is the positive pulse of predetermined width, and second control signal is the negative pulse of predetermined width.
To reach above-mentioned purpose, the position that another aspect of the present invention embodiment also proposed a kind of gamma rays reads system
System, the position read-out system of the gamma rays include：SSPM gamma ray detectors, the SSPM gamma ray detectors are used for
Gamma rays is detected, and current signal is generated according to the gamma rays；The position read out device of described gamma rays, it is described
The position read out device of gamma rays is connected with the output end of the SSPM gamma ray detectors, the position of the gamma rays
Read-out device is used to export the gate output signal according to the current signal；And resistor network module, the resistance net
Network module is connected with the position read out device of the gamma rays, and the resistor network module is used for according to the gating output letter
Number read the position of the gamma rays.
The position read-out system for the gamma rays that the embodiment of the present invention proposes, gal is detected by SSPM gamma ray detectors
Agate ray is to generate current signal, and then the position read out device of gamma rays exports gate output signal according to current signal,
Last resistor network module reads the position of gamma rays according to gate output signal.The position read out device of the gamma rays can
To substantially reduce influence of the dark noise to detector position resolution ratio, application of the SSPM detectors in gamma detection is greatly extended
Scope.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
Of the invention above-mentioned and/or additional aspect and advantage will become from the following description of the accompanying drawings of embodiments
Substantially and it is readily appreciated that, wherein：
Fig. 1 is the block diagram according to the position read-out system of the gamma rays of the embodiment of the present invention；
Fig. 2 is the block diagram according to the position read out device of the gamma rays of the embodiment of the present invention；
Fig. 3 is the structural representation according to the position read out device of the gamma rays of one embodiment of the invention；
Fig. 4 is the structural representation according to the position read out device of the gamma rays of another embodiment of the present invention；And
Fig. 5 is the structural representation according to the position read out device of the gamma rays of further embodiment of the present invention.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.For letter
Change disclosure of the invention, hereinafter the part and setting of specific examples are described.Certainly, they are only example, and
Purpose does not lie in the limitation present invention.In addition, the present invention can in different examples repeat reference numerals and/or letter.It is this heavy
It is the relation between itself not indicating discussed various embodiments and/or setting for purposes of simplicity and clarity again.This
Outside, the invention provides various specific techniques and material examples, but those of ordinary skill in the art can be appreciated that
The applicable property of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it
" on " structure can include the first and second features and be formed as the embodiment that directly contacts, other feature shape can also be included
Into the embodiment between the first and second features, such first and second feature may not be direct contact.
In the description of the invention, it is necessary to explanation, unless otherwise prescribed and limit, term " installation ", " connected ",
" connection " should be interpreted broadly, for example, it may be mechanical connection or electrical connection or the connection of two element internals, can
To be to be joined directly together, can also be indirectly connected by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
With reference to the accompanying drawings come describe the embodiment of the present invention proposition gamma rays position read out device and gamma rays
Position read-out system.
First, with reference to the accompanying drawings to describe the present invention embodiment propose gamma rays position read-out system.
As shown in figure 1, the position read-out system of the gamma rays of the embodiment of the present invention includes：The position of gamma rays is read
Device 1, resistor network module 2 and SSPM gamma ray detectors 3.Wherein, SSPM gamma ray detectors 3 are used to detect gal
Agate ray, and current signal is generated according to gamma rays.The position read out device 1 of gamma rays and SSPM gamma ray detectors
3 output end is connected, and the position read out device 1 of gamma rays is used to export gate output signal according to current signal.Resistance net
Network module 2 is connected with the position read out device 1 of gamma rays, and resistor network module 2 is used to read gal according to gate output signal
The position of agate ray.
Specifically, in one embodiment of the invention, after SSPM gamma ray detectors 3 detect gamma rays,
Passage of scintillation light caused by scintillation crystal in SSPM gamma ray detectors 3 only can be by a number of SSPM gamma ray detectors
Array element D is collected, and generates current signal according to the intensity of passage of scintillation light, and the current signal is higher than preset signals.And then gamma
The position read out device 1 of ray will only be collected into the SSPM gamma ray detectors of passage of scintillation light in SSPM gamma ray detectors 3
Array element D enters row of channels gating, to export the gate output signal equal or proportional with current signal, last resistance
Mixed-media network modules mixed-media 2 carries out shunting summation to gate output signal to read the position of gamma rays.
It should be noted that because other SSPM gamma ray detectors array elements D passage is not strobed, because
This, other SSPM gamma ray detectors array elements D dark noise would not add up into.So, dark noise is to position point
The influence of resolution will depend only on the number for the SSPM gamma ray detectors array elements D for being collected into passage of scintillation light, rather than institute
There is SSPM gamma ray detectors array elements D number.Specifically, generally in a detection process, it is collected into flicker
The SSPM gamma ray detectors array elements D of light number is not over 4, that is to say, that for a 8x8 or 12x12
For the SSPM gamma ray detectors 3 of array, most of SSPM gamma ray detectors array element D current signal will not
Higher than preset signals.Therefore, only SSPM gamma ray detectors array element D of the current signal higher than preset signals is led to
Road gates, then and influence of the dark noise to position resolution will be reduced to original 1/16 or even 1/36, and this influence
Reducing will not be as the scale of SSPM gamma ray detectors arrays increases and changes.
The position read-out system for the gamma rays that the embodiment of the present invention proposes, gal is detected by SSPM gamma ray detectors
Agate ray is to generate current signal, and then the position read out device of gamma rays exports gate output signal according to current signal,
Last resistor network module reads the position of gamma rays according to gate output signal.The position read out device of the gamma rays can
Only SSPM gamma ray detectors array element D of the current signal higher than preset signals is gated with realizing, greatly reduced dark
Influence of the noise to detector position resolution ratio, it have greatly expanded application of the SSPM detectors in gamma detection.
With reference to the accompanying drawings come describe the embodiment of the present invention proposition gamma rays position read out device.
As shown in Fig. 2 the position read out device 1 of the gamma rays of the embodiment of the present invention includes：Signal processing module 10, discriminate
Other module 20 and switch module 30.Wherein, signal processing module 10 and SSPM gamma rays in SSPM gamma ray detectors 3
Detector array elements D output end is connected, and signal processing module 10 is used for SSPM gammas in SSPM gamma ray detectors 3
The current signal of ray detector array cells D output is handled, and output amplitude discriminator signal and gate output signal.Discriminate
The first input end of other module 20 provides end with preset signals and is connected, and screens the second input and signal processing module of module 20
10 the first output end is connected, and screens module 20 and is used to screen amplitude discriminator signal according to preset signals, to distinguish width
Spend whether discriminator signal is dark noise, and export the first control signal and the second control signal.First control of switch module 30
End and the second control terminal are connected with the first output end and the second output end for screening module 20 respectively, the input of switch module 30
It is connected with the second output end of signal processing module 10, switch module 30 is used for according to the first control signal and the second control signal
Corresponding switch is closed to export gate output signal.
Further, as shown in figure 3, in one embodiment of the invention, when preset signals are predetermined current signal ith
When, screening module 20 can include：Electric current discriminator I1, the first monostable circuit submodule I2 and the first phase inverter I3.Its
In, electric current discriminator I1 first input end and preset signals provide end and are connected, electric current discriminator I1 the second input and letter
First output end of number processing module 10 is connected, and electric current discriminator I1 is used for according to predetermined current signal ithWith amplitude discriminator signal
Generate discriminator signal.First monostable circuit submodule I2 is connected with electric current discriminator I1 output end, the first monostable circuit
Submodule I2 output end is used for according to examination as the first output end for screening module 20, the first monostable circuit submodule I2
First control signal of the rising edge generation predetermined width of signal such as discriminator signal.First phase inverter I3 and the first monostable electricity
The output end of way module I 2 is connected, and for the first phase inverter I3 output end as the second output end for screening module 20, first is anti-
Phase device I3 is used to carrying out reversely the first control signal and generating the second control signal.
Specifically, as shown in figure 3, in one embodiment of the invention, when amplitude discriminator signal is believed less than predetermined current
Number ithWhen, illustrate that now amplitude discriminator signal is dark noise, now, the discriminator signal of electric current discriminator I1 outputs is low level,
First control signal of the first monostable circuit submodule I2 outputs is the negative pulse of predetermined width, the first phase inverter I3 outputs
Second control signal is the positive pulse of predetermined width.When amplitude discriminator signal is higher than predetermined current signal ithWhen, illustrate now width
It is not dark noise to spend discriminator signal, and now, the discriminator signal of electric current discriminator I1 outputs is high level, and the first monostable circuit is sub
The first control signal that module I 2 exports is predetermined width positive negative pulse stuffing, and the second control signal of the first phase inverter I3 outputs is pre-
If width negative and positive pulse.
Further, as shown in figure 3, in one embodiment of the invention, signal processing module 10 can include：First
Current source Ib1, the second current source Ib2, the 3rd current source Ib3, the first PMOS transistor P1, the first nmos pass transistor N1, second
Nmos pass transistor N2 and the 3rd nmos pass transistor N3.Wherein, the first current source Ib1First end and SSPM gamma ray detections
SSPM gamma ray detectors array element D output end is connected in device 3.First PMOS transistor P1 source electrode and the first electric current
Source Ib1First end be connected, the first PMOS transistor P1 grid and predetermined DC bias voltage provide end V and are connected, the first PMOS
Transistor P1 is operated in common gate to provide less input impedance.First nmos pass transistor N1 drain electrode and the first PMOS crystal
Pipe P1 drain electrode is connected, and the first nmos pass transistor N1 drain electrode is connected with the first nmos pass transistor N1 grid.Second current source
Ib2First end and the first current source Ib1The second end be connected.Second nmos pass transistor N2 grid and the first nmos pass transistor
N1 grid is connected, the second nmos pass transistor N2 drain electrode and the second current source Ib2The second end be connected, the second nmos pass transistor
N2 source electrode is connected with the first nmos pass transistor N1 source electrode, and the of the second nmos pass transistor N2 drain electrode and electric current discriminator I1
Two inputs are connected, the second nmos pass transistor N2 the first output end to drain as signal processing module 10.3rd current source
Ib3First end and the second current source Ib2First end be connected.3rd nmos pass transistor N3 grid and the first nmos pass transistor
N1 grid is connected, the 3rd nmos pass transistor N3 drain electrode and the 3rd current source Ib3The second end be connected, the 3rd nmos pass transistor
N3 source electrode is connected with the first nmos pass transistor N1 source electrode, and the 3rd nmos pass transistor N3 drain electrode is as signal processing module 10
The second output end.
Specifically, as shown in figure 3, SSPM gamma ray detectors array element D is exported in SSPM gamma ray detectors 3
Current signal pass through the electricity that is made up of the first nmos pass transistor N1, the second nmos pass transistor N2 and the 3rd nmos pass transistor N3
Flow output amplitude discriminator signal and gate output signal after mirror replicates, amplitude discriminator signal and gate output signal and SSPM gammas
The current signal of ray detector array cells D output is equal or proportional.Wherein, amplitude discriminator signal and SSPM gammas
Ray detector array cells D output current signal between ratio by the second nmos pass transistor N2 channel width-over-length ratio (W/
L) ratio with the first nmos pass transistor N1 channel width-over-length ratio determines, gate output signal and SSPM gamma ray detectors battle arrays
Ratio between the current signal of column unit D outputs by the 3rd nmos pass transistor N3 channel width-over-length ratio and the first nmos pass transistor
The ratio of N1 channel width-over-length ratio determines.First current source Ib1, the second current source Ib2, the 3rd current source Ib3First is provided respectively
PMOS transistor P1 and the first nmos pass transistor N1, the second nmos pass transistor N2, the 3rd nmos pass transistor N3 quiescent operation electricity
Stream, and the second current source Ib2, the 3rd current source Ib3With the first current source Ib1Also into certain proportionate relationship so that work as SSPM
When gamma ray detectors array element D does not have current signal, the first current source Ib1With the second current source Ib2Branch road does not have substantially
Output current.
It should be noted that some SSPM gamma ray detectors 3 can provide fast, slow two-way current signal output, this
Sample can is after amplitude discriminator signal carries out amplitude discriminator in the fast signal after by processing, and control slow signal gates output letter
Number whether it is linked into resistor network module 2.
Specifically, as shown in figure 4, in another embodiment of the present invention, as SSPM in SSPM gamma ray detectors 3
Gamma ray detectors array element D includes the first output end and the second output end, and SSPM in SSPM gamma ray detectors 3
First current signal of gamma ray detectors array element D the first output end output is faster than SSPM gamma ray detectors 3
During the second current signal of middle SSPM gamma ray detectors array element D the second output end output, signal processing module 10
It can include：4th current source Ib4, the 5th current source Ib5, the 6th current source Ib6, the 7th current source Ib7, the 4th nmos pass transistor
N4, the second PMOS transistor P2, the 3rd PMOS transistor P3, the 4th PMOS transistor P4, the 5th nmos pass transistor N5 and
Six nmos pass transistor N6.Wherein, the 4th current source Ib4First end and SSPM gamma ray detectors 3 in SSPM gamma rays visit
The first output end for surveying device array element D is connected.4th nmos pass transistor N4 source electrode and the 4th current source Ib4First end phase
Even, the 4th nmos pass transistor N4 grid provides end V with predetermined DC bias voltage and is connected, and the 4th nmos pass transistor N4 is operated in
Common gate is to provide less input impedance.Second PMOS transistor P2 drain electrode and the 4th nmos pass transistor N4 drain electrode phase
Even, the second PMOS transistor P2 drain electrode is connected with the second PMOS transistor P2 grid.5th current source Ib5First end with
4th current source Ib4The second end be connected.3rd PMOS transistor P3 grid is connected with the second PMOS transistor P2 grid,
3rd PMOS transistor P3 drain electrode and the 5th current source Ib5The second end be connected, the 3rd PMOS transistor P3 source electrode and second
PMOS transistor P2 source electrode is connected, and the 3rd PMOS transistor P3 drain electrode is connected with electric current discriminator I1 the second input,
First output end of the 3rd PMOS transistor P3 drain electrode as signal processing module 10.6th current source Ib6First end with
SSPM gamma ray detectors array element D the second output end is connected in SSPM gamma ray detectors 3.4th PMOS crystal
Pipe P4 source electrode and the 6th current source Ib6First end be connected, the 4th PMOS transistor P4 grid and predetermined DC bias voltage
There is provided end V to be connected, the 4th PMOS transistor P4 is operated in common gate to provide less input impedance.5th nmos pass transistor N5
Drain electrode be connected with the 4th PMOS transistor P4 drain electrode, the 5th nmos pass transistor N5 drain electrode is with the 5th nmos pass transistor N5
Grid is connected.7th current source Ib7First end and the 6th current source Ib6The second end be connected.6th nmos pass transistor N6 grid
Pole is connected with the 5th nmos pass transistor N5 grid, the 6th nmos pass transistor N6 drain electrode and the 7th current source Ib7The second end phase
Even, the 6th nmos pass transistor N6 source electrode is connected with the 5th nmos pass transistor N5 source electrode, the 6th nmos pass transistor N6 drain electrode
The second output end as signal processing module 10.
Specifically, as shown in figure 4, the first current signal passes through by the 4th nmos pass transistor N4, the second PMOS transistor P2
And the 3rd PMOS transistor P3 composition the proportional duplication of current mirror after output amplitude discriminator signal, the second current signal pass through
The proportional duplication of current mirror being made up of the 4th PMOS transistor P4, the 5th nmos pass transistor N5 and the 6th nmos pass transistor N6
After export gate output signal.
Further, as shown in Figure 3 and Figure 4, in one embodiment of the invention, switch module 30 can include：The
Five PMOS transistor P5, the 6th PMOS transistor P6 and the 7th PMOS transistor P7.Wherein, the 5th PMOS transistor P5 leakage
Pole is connected with the second output end of signal processing module 10, the 5th PMOS transistor P5 grid and screens the first defeated of module 20
Go out end to be connected, the output end of the 5th PMOS transistor P5 source electrode as switch module 30.6th PMOS transistor P6 drain electrode
It is connected with the second output end of signal processing module 10, the 6th PMOS transistor P6 grid and the second output for screening module 20
End is connected.7th PMOS transistor P7 drain electrode is connected with the 6th PMOS transistor P6 source electrode, the 7th PMOS transistor P7's
Grid is connected with the 7th PMOS transistor P7 drain electrode, the 7th PMOS transistor P7 source ground.
Specifically, as shown in Figure 3 and Figure 4, in one embodiment of the invention, the first control signal and the second control letter
Number the PMOS transistor P5 of gating switch the 5th and the PMOS transistor P6 of gating switch the 6th can be controlled respectively.When the first control letter
Number it is the negative pulse of predetermined width, when the second control signal is the positive pulse of predetermined width, in pulse width, the 5th PMOS is brilliant
Body pipe P5 disconnects, the 6th PMOS transistor P6 closures, and now gate output signal is flowed into the by the 6th PMOS transistor P6
In seven PMOS transistor P7, gate output signal may not flow into by resistance R1' to resistance RM+1' wait element form one-dimensional electricity
Hinder in mixed-media network modules mixed-media 2, M is SSPM gamma ray detectors array elements D number.When the first control signal is predetermined width
Positive pulse, when the second control signal is the negative pulse of predetermined width, in pulse width, the 5th PMOS transistor P5 closures, the
Six PMOS transistor P6 are disconnected, and now gate output signal is flowed into resistor network module 2 by the 5th PMOS transistor P5,
Resistor network module 2 reads the position of corresponding gamma rays according to gate output signal.First control signal and the second control letter
Number pulse width can cover duration of gate output signal.
It should be noted that resistor network module 2 as shown in Figure 3 and Figure 4 can use traditional resistor network position
Reading method, i.e. gate output signal are through resistance R1' to resistance RM+1' R is flowed through after shuntingf1And Rf2, produce output X1And X2。X1With
X2Difference and X1With X2The ratio of ratio and the gate output signal shunting of sum is directly proportional, is also just accessed with gate output signal
Position to resistor network module 2 is relevant.Further, the current signal gated if necessary to provide extra belt switch all the way
Export to realize the sensitive reading of the two-dimensional position of gamma rays, it is only necessary to by the 3rd nmos pass transistor N3, the 5th PMOS transistor
P5 to the 7th PMOS transistor P7 and the 3rd current source Ib3The circuit of composition replicate it is a, or by one-dimensional resistor network
Module 2 changes the resistor network module 2 of two dimension into.
Further, in one embodiment of the invention, signal processing module 10 as shown in Figure 3 can also include low
Bandpass filter, one end of low pass filter are connected with the first nmos pass transistor N1 grid, the other end of low pass filter and
Three nmos pass transistor N3 grid is connected, and low pass filter is faster than gate output signal for span of control limit of control discriminator signal.Specifically
Ground, in one embodiment of the invention, low pass filter can be made up of resistance and electric capacity.It should be noted that due to electricity
Stream discriminator I1 and the first monostable circuit submodule I2 is required for the regular hour to produce control gating switch the 5th
PMOS transistor P5 the first control signal, and control gating switch the 6th PMOS transistor P6 the second control signal, this
The front edge portion of sample gate output signal is likely due to the 5th PMOS transistor P5 and is not in time for closure without being flowed into electricity
Hinder in mixed-media network modules mixed-media 2, and low pass filter is added in signal processing module 10 can avoid this problem.In addition, for such as
Signal processing module 10 shown in Fig. 4 can then not have to include low pass filter, and this is due to signal transacting mould as shown in Figure 4
The fast signal that block 10 exports is that amplitude discriminator signal is faster than slow signal i.e. gate output signal, can substantially ensure that gating is opened
The first control signal for closing the 5th PMOS transistor P5 produces before gate output signal arrival.
Further, as shown in figure 5, in yet another embodiment of the present invention, when preset signals are predeterminated voltage signal
VthWhen, screening module 20 can include：Voltage discriminator I4, the second monostable circuit submodule I5 and the second phase inverter I6.
Wherein, voltage discriminator I4 first input end and preset signals provide end and are connected, voltage discriminator I4 the second input with
First output end of signal processing module 10 is connected, and voltage discriminator I4 is used for according to predeterminated voltage signal VthBelieve with amplitude discriminator
Number generation discriminator signal.Second monostable circuit submodule I5 is connected with voltage discriminator I4 output end, the second monostable electricity
The output end of way module I 5 is used for according to Zhen as the first output end for screening module 20, the second monostable circuit submodule I5
Level signal generates the first control signal of predetermined width.Second phase inverter I6 and the second monostable circuit submodule I5 output end
It is connected, as the second output end for screening module 20, the second phase inverter I6 is used to control to first the second phase inverter I6 output end
Signal processed carries out reversely and generates the second control signal.Further, in one embodiment of the invention, electric current discriminator I1
It can also be used to the discriminator signal of voltage discriminator I4 outputs as timing signal.
Further, as shown in figure 5, in yet another embodiment of the present invention, switch module 30 can include：8th
PMOS transistor P8 and the 9th PMOS transistor P9.Wherein, the 8th PMOS transistor P8 drain electrode and signal processing module 10
Output end be connected, the 8th PMOS transistor P8 grid is connected with screening the first output end of module 20, the 8th PMOS crystal
Output end of the pipe P8 source electrode as switch module 30.9th PMOS transistor P9 drain electrode and the 8th PMOS transistor P8 source
Extremely it is connected, the 9th PMOS transistor P9 grid is connected with screening the second output end of module 20, the 9th PMOS transistor P9's
Source ground.
Further, as shown in figure 5, in yet another embodiment of the present invention, signal processing module 10 can include：The
One resistance R1, second resistance R2,3rd resistor R3 and operational amplifier A.Wherein, first resistor R1 such as 50 one end with
SSPM gamma ray detectors array element D output end is connected in SSPM gamma ray detectors 3, and first resistor R1's is another
The current signal that SSPM gamma ray detectors 3 export can be converted to voltage signal by end ground connection, first resistor R1.Second electricity
Resistance R2 one end is connected with first resistor R1 one end.The inverting input of operational amplifier A and the second resistance R2 other end
Be connected, the output end of operational amplifier A respectively with voltage discriminator I4 the second input and the input phase of switch module 30
Even, operational amplifier A is used to export identical amplitude discriminator signal and gate output signal.3rd resistor R3 one end and computing
Amplifier A inverting input is connected, and the 3rd resistor R3 other end is connected with the output end of operational amplifier A.Need to illustrate
, because first resistor R1 resistance value is smaller, the amplitude of the voltage signal after conversion is also smaller, it is therefore desirable to passes through second
Resistance R2,3rd resistor R3 and operational amplifier A are further amplified.
Specifically, as shown in figure 5, in one embodiment of the invention, when amplitude discriminator signal is believed less than predeterminated voltage
Number VthWhen, illustrate that now amplitude discriminator signal is dark noise, now, the discriminator signal of voltage discriminator I4 outputs is low level,
First control signal of the second monostable circuit submodule I5 outputs is the negative pulse of predetermined width, the second phase inverter I6 outputs
Second control signal is the positive pulse of predetermined width, and in pulse width, the 8th PMOS transistor P8 disconnects, the 9th PMOS crystal
Pipe P9 is closed, and now gate output signal is flowed into the 9th PMOS transistor P9, and gate output signal may not flow into by electricity
In the resistor network module 2 for hindering the elements such as R4, resistance R5 composition.When amplitude discriminator signal is higher than predeterminated voltage signal VthWhen, say
Bright now amplitude discriminator signal is not dark noise, and now, the discriminator signal of voltage discriminator I4 outputs is high level, and second is monostable
First control signal of state circuit submodule I5 outputs is predetermined width positive pulse, and the second control of the second phase inverter I6 outputs is believed
Number it is predetermined width negative pulse, the 8th PMOS transistor P8 closures, the 9th PMOS transistor P9 disconnects, now gate output signal
It is flowed into by the 8th PMOS transistor P8 in resistor network module 2, resistor network module 2 reads phase according to gate output signal
Answer the position of gamma rays.
Further, in one embodiment of the invention, when dark noise need not be reduced, resistance net as shown in Figure 5
In network module 2, resistance R4, resistance R5And operational amplifier A3Gamma directly will can be read according to the output of operational amplifier A
The position of ray, now, position and the resistance R of gamma rays4With resistance R5Ratio it is relevant, according to SSPM gamma ray detections
Choose different resistance R in device array element D position4Value, you can obtain the output relevant with the position of gamma rays.
The position read out device for the gamma rays that the embodiment of the present invention proposes, is penetrated by signal processing module to SSPM gammas
The current signal of line detector output is handled to generate amplitude discriminator signal and gate output signal, and then screens module root
Amplitude discriminator signal is screened according to preset signals to export the first control signal and the second control signal, final switch module
Gate output signal is exported according to the first control signal and the second control signal.The position read out device of the gamma rays can be with
Realize and only gate SSPM gamma ray detectors array element of the current signal higher than preset signals, greatly reduce dark noise
Influence to detector position resolution ratio, it have greatly expanded application of the SSPM detectors in gamma detection.
Any process or method described otherwise above description in flow chart or herein is construed as, and represents to include
Module, fragment or the portion of the code of the executable instruction of one or more the step of being used to realize specific logical function or process
Point, and the scope of the preferred embodiment of the present invention includes other realization, wherein can not press shown or discuss suitable
Sequence, including according to involved function by it is basic simultaneously in the way of or in the opposite order, carry out perform function, this should be of the invention
Embodiment person of ordinary skill in the field understood.
Expression or logic and/or step described otherwise above herein in flow charts, for example, being considered use
In the order list for the executable instruction for realizing logic function, may be embodied in any computer-readable medium, for
Instruction execution system, device or equipment (such as computer based system including the system of processor or other can be held from instruction
The system of row system, device or equipment instruction fetch and execute instruction) use, or combine these instruction execution systems, device or set
It is standby and use.For the purpose of this specification, " computer-readable medium " can any can be included, store, communicate, propagate or pass
Defeated program is for instruction execution system, device or equipment or the dress used with reference to these instruction execution systems, device or equipment
Put.The more specifically example (non-exhaustive list) of computer-readable medium includes following：Electricity with one or more wiring
Connecting portion (electronic installation), portable computer diskette box (magnetic device), random access memory (RAM), read-only storage
(ROM), erasable edit read-only storage (EPROM or flash memory), fiber device, and portable optic disk is read-only deposits
Reservoir (C3ROM).In addition, computer-readable medium, which can even is that, to print the paper of described program thereon or other are suitable
Medium, because can then enter edlin, interpretation or if necessary with it for example by carrying out optical scanner to paper or other media
His suitable method is handled electronically to obtain described program, is then stored in computer storage.
It should be appreciated that each several part of the present invention can be realized with hardware, software, firmware or combinations thereof.Above-mentioned
In embodiment, software that multiple steps or method can be performed in memory and by suitable instruction execution system with storage
Or firmware is realized.If, and in another embodiment, can be with well known in the art for example, realized with hardware
Any one of row technology or their combination are realized：With the logic gates for realizing logic function to data-signal
Discrete logic, have suitable combinational logic gate circuit application specific integrated circuit, programmable gate array (PGA), scene
Programmable gate array (FPGA) etc..
Those skilled in the art are appreciated that to realize all or part of step that above-described embodiment method carries
Suddenly it is that by program the hardware of correlation can be instructed to complete, described program can be stored in a kind of computer-readable storage medium
In matter, the program upon execution, including one or a combination set of the step of embodiment of the method.
In addition, each functional unit in each embodiment of the present invention can be integrated in a processing module, can also
That unit is individually physically present, can also two or more units be integrated in a module.Above-mentioned integrated mould
Block can both be realized in the form of hardware, can also be realized in the form of software function module.The integrated module is such as
Fruit is realized in the form of software function module and as independent production marketing or in use, can also be stored in a computer
In read/write memory medium.
Storage medium mentioned above can be read-only storage, disk or CD etc..
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be any
One or more embodiments or example in combine in an appropriate manner.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is by appended claims and its equivalent limits.
Claims (10)
- A kind of 1. position read out device of gamma rays, it is characterised in that including：Signal processing module, it is connected with the output end of solid state photomultiplier pipe SSPM gamma ray detectors, the signal transacting Module is used to handle the current signal of SSPM gamma ray detectors output, and output amplitude discriminator signal and choosing Logical output signal；Module is screened, the first input end for screening module provides end with preset signals and is connected, described to screen the second of module Input is connected with the first output end of the signal processing module, and the examination module is used for according to the preset signals to institute State amplitude discriminator signal to be screened, and export the first control signal and the second control signal；AndSwitch module, the first control terminal and the second control terminal the first output with the examination module respectively of the switch module End is connected with the second output end, and the input of the switch module is connected with the second output end of the signal processing module, institute Switch module is stated to be used to closing corresponding switch according to first control signal and second control signal with described in exporting Gate output signal；Wherein, when the preset signals are predetermined current signal, the examination module includes：Electric current discriminator, first input end and the preset signals of the electric current discriminator provide end and are connected, and the electric current is discriminated Second input of other device is connected with the first output end of the signal processing module, and the electric current discriminator is used for according to Predetermined current signal and the amplitude discriminator signal generation discriminator signal；First monostable circuit submodule, the output end phase of the first monostable circuit submodule and the electric current discriminator Even, first output end of the output end of the first monostable circuit submodule as the examination module, described first is monostable State circuit submodule is used for first control signal that predetermined width is generated according to the discriminator signal；AndFirst phase inverter, first phase inverter are connected with the output end of the first monostable circuit submodule, and described first Second output end of the output end of phase inverter as the examination module, first phase inverter are used to believe the described first control Number carry out reversely and generate second control signal.
- 2. the position read out device of gamma rays as claimed in claim 1, it is characterised in that the signal processing module bag Include：First current source, the first end of first current source are connected with the output end of the SSPM gamma ray detectors；First PMOS transistor, the source electrode of first PMOS transistor is connected with the first end of first current source, described The grid of first PMOS transistor provides end with predetermined DC bias voltage and is connected；First nmos pass transistor, the drain electrode of first nmos pass transistor are connected with the drain electrode of first PMOS transistor, institute The drain electrode for stating the first nmos pass transistor is connected with the grid of first nmos pass transistor；Second current source, the first end of second current source are connected with the second end of first current source；Second nmos pass transistor, the grid of second nmos pass transistor are connected with the grid of first nmos pass transistor, institute The drain electrode for stating the second nmos pass transistor is connected with the second end of second current source, the source electrode of second nmos pass transistor with The source electrode of first nmos pass transistor is connected, the drain electrode of second nmos pass transistor and the electric current discriminator it is second defeated Enter end to be connected, the first output end to drain as the signal processing module of second nmos pass transistor；3rd current source, the first end of the 3rd current source are connected with the first end of second current source；And3rd nmos pass transistor, the grid of the 3rd nmos pass transistor are connected with the grid of first nmos pass transistor, institute The drain electrode for stating the 3rd nmos pass transistor is connected with the second end of the 3rd current source, the source electrode of the 3rd nmos pass transistor with The source electrode of first nmos pass transistor is connected, the drain electrode of the 3rd nmos pass transistor as the signal processing module the Two output ends.
- 3. the position read out device of gamma rays as claimed in claim 2, it is characterised in that the signal processing module also wraps Include：Low pass filter, one end of the low pass filter are connected with the grid of first nmos pass transistor, the low pass filtered The other end of ripple device is connected with the grid of the 3rd nmos pass transistor, and the low pass filter is used to control the amplitude discriminator Signal is faster than the gate output signal.
- 4. the position read out device of gamma rays as claimed in claim 1, it is characterised in that when the SSPM gamma rays is visited Surveying device includes the first output end and the second output end, and the first of the first output end output of the SSPM gamma ray detectors When current signal is faster than the second current signal of the second output end output of the SSPM gamma ray detectors, at the signal Reason module includes：4th current source, the first end of the 4th current source and the first output end phase of the SSPM gamma ray detectors Even；4th nmos pass transistor, the source electrode of the 4th nmos pass transistor is connected with the first end of the 4th current source, described The grid of 4th nmos pass transistor provides end with predetermined DC bias voltage and is connected；Second PMOS transistor, the drain electrode of second PMOS transistor are connected with the drain electrode of the 4th nmos pass transistor, institute The drain electrode for stating the second PMOS transistor is connected with the grid of second PMOS transistor；5th current source, the first end of the 5th current source are connected with the second end of the 4th current source；3rd PMOS transistor, the grid of the 3rd PMOS transistor are connected with the grid of second PMOS transistor, institute The drain electrode for stating the 3rd PMOS transistor is connected with the second end of the 5th current source, the source electrode of the 3rd PMOS transistor with The source electrode of second PMOS transistor is connected, the drain electrode of the 3rd PMOS transistor and the electric current discriminator it is second defeated Enter end to be connected, the first output end to drain as the signal processing module of the 3rd PMOS transistor；6th current source, the first end of the 6th current source and the second output end phase of the SSPM gamma ray detectors Even；4th PMOS transistor, the source electrode of the 4th PMOS transistor is connected with the first end of the 6th current source, described The grid of 4th PMOS transistor provides end with the predetermined DC bias voltage and is connected；5th nmos pass transistor, the drain electrode of the 5th nmos pass transistor are connected with the drain electrode of the 4th PMOS transistor, institute The drain electrode for stating the 5th nmos pass transistor is connected with the grid of the 5th nmos pass transistor；7th current source, the first end of the 7th current source are connected with the second end of the 6th current source；And6th nmos pass transistor, the grid of the 6th nmos pass transistor are connected with the grid of the 5th nmos pass transistor, institute The drain electrode for stating the 6th nmos pass transistor is connected with the second end of the 7th current source, the source electrode of the 6th nmos pass transistor with The source electrode of 5th nmos pass transistor is connected, the drain electrode of the 6th nmos pass transistor as the signal processing module the Two output ends.
- 5. the position read out device of gamma rays as claimed in claim 1, it is characterised in that the switch module includes：5th PMOS transistor, the drain electrode of the 5th PMOS transistor and the second output end phase of the signal processing module Even, the grid of the 5th PMOS transistor is connected with the first output end of the examination module, the 5th PMOS transistor Output end of the source electrode as the switch module；6th PMOS transistor, the drain electrode of the 6th PMOS transistor and the second output end phase of the signal processing module Even, the grid of the 6th PMOS transistor is connected with the second output end of the examination module；And7th PMOS transistor, the drain electrode of the 7th PMOS transistor are connected with the source electrode of the 6th PMOS transistor, institute The grid for stating the 7th PMOS transistor is connected with the drain electrode of the 7th PMOS transistor, the source electrode of the 7th PMOS transistor Ground connection.
- 6. the position read out device of gamma rays as claimed in claim 1, it is characterised in that when the preset signals are default During voltage signal, the examination module includes：Voltage discriminator, first input end and the preset signals of the voltage discriminator provide end and are connected, and the voltage is discriminated Second input of other device is connected with the first output end of the signal processing module, and the voltage discriminator is used for according to Predeterminated voltage signal and the amplitude discriminator signal generation discriminator signal；Second monostable circuit submodule, the output end phase of the second monostable circuit submodule and the voltage discriminator Even, first output end of the output end of the second monostable circuit submodule as the examination module, described second is monostable State circuit submodule is used for first control signal that predetermined width is generated according to the discriminator signal；AndSecond phase inverter, second phase inverter are connected with the output end of the second monostable circuit submodule, and described second Second output end of the output end of phase inverter as the examination module, second phase inverter are used to believe the described first control Number carry out reversely and generate second control signal.
- 7. the position read out device of gamma rays as claimed in claim 6, it is characterised in that the switch module includes：8th PMOS transistor, the drain electrode of the 8th PMOS transistor are connected with the output end of the signal processing module, institute The grid for stating the 8th PMOS transistor is connected with the first output end of the examination module, the source electrode of the 8th PMOS transistor Output end as the switch module；And9th PMOS transistor, the drain electrode of the 9th PMOS transistor are connected with the source electrode of the 8th PMOS transistor, institute The grid for stating the 9th PMOS transistor is connected with the second output end of the examination module, the source electrode of the 9th PMOS transistor Ground connection.
- 8. the position read out device of gamma rays as claimed in claim 7, it is characterised in that the signal processing module bag Include：First resistor, one end of the first resistor are connected with the output end of the SSPM gamma ray detectors, and described first The other end ground connection of resistance；Second resistance, one end of the second resistance are connected with one end of the first resistor；Operational amplifier, the inverting input of the operational amplifier are connected with the other end of the second resistance, the computing The output end of amplifier is connected with the second input of the voltage discriminator and the input of the switch module respectively, described Operational amplifier is used to export amplitude discriminator signal described in identical and the gate output signal；And3rd resistor, one end of the 3rd resistor are connected with the inverting input of the operational amplifier, the 3rd resistor The other end be connected with the output end of the operational amplifier.
- 9. the position read out device of the gamma rays as described in claim 1 or 6, it is characterised in thatWhen the amplitude discriminator signal is less than preset signals, the discriminator signal is low level, and first control signal is The negative pulse of predetermined width, second control signal are the positive pulse of predetermined width；AndWhen the amplitude discriminator signal is higher than preset signals, the discriminator signal is high level, and first control signal is The positive pulse of predetermined width, second control signal are the negative pulse of predetermined width.
- A kind of 10. position read-out system of gamma rays, it is characterised in that including：Solid state photomultiplier pipe SSPM gamma ray detectors, the SSPM gamma ray detectors are used to detect gamma rays, And current signal is generated according to the gamma rays；The position read out device of gamma rays as claimed in any one of claims 1-9 wherein, the position of the gamma rays are read Device is connected with the output end of the SSPM gamma ray detectors, and the position read out device of the gamma rays is used for according to institute State current signal and export the gate output signal；AndResistor network module, the resistor network module are connected with the position read out device of the gamma rays, the resistance net Network module is used for the position that the gamma rays is read according to the gate output signal.
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| CN201410771655.9A CN104539243B (en) | 2014-12-12 | 2014-12-12 | The position read out device of gamma rays and the position read-out system of gamma rays |
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| CN201410771655.9A CN104539243B (en) | 2014-12-12 | 2014-12-12 | The position read out device of gamma rays and the position read-out system of gamma rays |
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| CN104539243B true CN104539243B (en) | 2017-11-21 |
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