CN104538417A - LED open circuit protection integrated chip based on diode chain and manufacturing method thereof - Google Patents
LED open circuit protection integrated chip based on diode chain and manufacturing method thereof Download PDFInfo
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- CN104538417A CN104538417A CN201510008847.9A CN201510008847A CN104538417A CN 104538417 A CN104538417 A CN 104538417A CN 201510008847 A CN201510008847 A CN 201510008847A CN 104538417 A CN104538417 A CN 104538417A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000011056 performance test Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses an LED open circuit protection integrated chip based on a diode chain and a manufacturing method of the LED open circuit protection integrated chip based on the diode chain. The LED open circuit protection integrated chip based on the diode chain comprises the forward diode chain formed by connecting multiple diodes in series in the forward direction, the diodes are completely identical in structure, the LED open circuit protection integrated chip further comprises a backward parallel diode connected with the forward diode chain in parallel in the backward direction, and the two ends of the forward diode chain serve as a positive electrode and a negative electrode of the LED open circuit protection integrated chip based on the diode chain. When an LED set normally works, the chip is turned off. When an LED open circuit exists, the diode chain connected in series in the forward direction in the chip is connected so as to guarantee that LEDs connected with the diode chain in series can normally work. When excessively high backward voltage occurs on the two ends of each LED, the backward diode in the chip is connected to discharge current, and an LED lamp is prevented from being burned out. The LED open circuit protection integrated chip based on the diode chain is simple in structure, stable in performance, low in cost and capable of being widely applied to LED open circuit protection and chip ESD protection.
Description
Technical field
The invention belongs to Electronic Protection field, relate to the open-circuit protecting device of a kind of LED, specifically a kind of LED open-circuit-protection integrated chip based on diode chain, present invention also offers a kind of manufacture method of above-mentioned integrated chip simultaneously.
Background technology
Light-emitting diode (LED) is widely applied in lighting field owing to having brightness is high, low, the life-span of consuming energy is long advantage.But because the I-V characteristic of light-emitting diode exponentially changes, therefore, even if there is small change in voltage, also the curent change of light-emitting diode can be caused very large, and directly determined the brightness of light-emitting diode by the size of current of light-emitting diode, and then directly affect the brightness of light-emitting diode by the change of the electric current of light-emitting diode.In order to ensure that the brightness of light-emitting diode remains unchanged, LED drive chip a lot of in reality adopts constant current mode, simultaneously in order to ensure all lumination of light emitting diode consistent (LED light device that most of lighting field uses all is made up of multiple light-emitting diode), LED illumination array adopts all light-emitting diode tandem types, or connection in series-parallel mixed type, with the demand of satisfied illumination.
Although can substantially realize in prior art making the lumination of light emitting diode of LED light emitting array consistent, but in actual use due to discreteness and the error of production process of semiconductor, cause the spread in performance of each LED uneven, therefore when multiple LED strip is joined, their operating state is also different, when wherein one group of LED group is opened a way, if do not carry out the measure of open-circuit-protection to this group LED group, whole series circuit open circuit can be made, namely remaining LED group also cannot normally work, thus make the illumination of whole LED illumination array break down, reduce the useful life of whole LED illumination array, and staff has to pass through loaded down with trivial details test and just can learn it is which group LED group breaks down, carry out again changing or keeping in repair, therefore the later stage is caused to change, maintenance work loaded down with trivial details.Meanwhile, because LED is oppositely withstand voltage very little, when there is static discharge, excessive reverse voltage easily burns LED.
In order to avoid above-mentioned situation occurs; prior art utilizes integrated amplifier usually; and the open circuit of some discrete components composition detects and protective circuit is opened a way and esd protection to often organizing LED group; there is following defect in certain existing guard method: circuit is complicated; volume is large; power consumption is large, is unfavorable for reducing costs.
Summary of the invention
The object of this invention is to provide a kind of LED open-circuit-protection integrated chip based on diode chain, when LED group open circuit of its corresponding protection, a stable magnitude of voltage can be exported, make remaining LED group still can normally work; Directly current drain is fallen when excessive reverse voltage can appear in the diode of reverse parallel connection at LED two ends simultaneously, prevent LED from burning.
Meanwhile, present invention also offers a kind of manufacture method of above-mentioned protection integrated chip, the single diode of large On current can be produced by the method.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is:
The described LED open-circuit-protection integrated chip based on diode chain comprises the forward diode chain formed by identical several diode forward series connection of structure; also comprise one with the anti-parallel diodes of forward diode chain reverse parallel connection, the two ends of forward diode chain are as the both positive and negative polarity of the LED open-circuit-protection integrated chip based on diode chain.
Restriction as to diode chain of the present invention: the conducting voltage of forward diode chain and the puncture voltage of anti-parallel diodes are greater than the conducting voltage of LED, and be less than the output voltage of the external power source module of powering for LED, during to ensure that LED normally works, chip turns off, LED open circuit or chip conducting when there is large reverse voltage;
The number of diodes of connecting in described forward diode chain depends on single diode forward conducting voltage size and the LED conducting voltage for open-circuit-protection thereof.
Further restriction as to diode of the present invention and anti-parallel diodes: all diodes and the anti-parallel diodes structure of described formation forward diode chain are identical, include stack gradually from bottom to up P type substrate, N trap active area, N+ active area and P+ active area, silicon dioxide layer and metal interconnecting layer, described N+ active area forms the negative electrode of diode or anti-parallel diodes together, and P+ active area forms the anode of diode or reverse parallel connection diode together.
Further restriction as to diode of the present invention and anti-parallel diodes: described each diode all and anti-parallel diodes comprise several N+ active areas and P+ active area, N+ active area and P+ active area are disposed on top, N trap active area successively, and all N+ active areas of each diode and anti-parallel diodes are connected, all P+ active areas of each diode and anti-parallel diodes are connected.
As further limiting again diode of the present invention and anti-parallel diodes: described N+ active area or P+ active region area identical with junction depth, and just contact hole is had to the silicon dioxide layer on its upper strata, by forming metal electrode at contact hole depositing metal, all N+ active areas of all each diodes and anti-parallel diodes or metal electrode corresponding to all P+ active region are connected by metal interconnecting layer.
Limit as to last one of the present invention: described each diode and anti-parallel diodes are stayed alone a N trap active area, each diode and anti-parallel diodes mutually isolated, and all N trap active areas are located in same P type substrate.
As to the restriction of manufacture method of LED open-circuit-protection integrated chip that the present invention is based on diode chain: the manufacture method of the described LED open-circuit-protection integrated chip based on diode chain comprises the following steps:
(1) make containing several as the wafer of the LED open-circuit-protection integrated chip based on diode chain in claim 1 to 6 as described in any one on silicon chip;
(2) to the performance test of ready-made wafer, scribing, encapsulation, the single LED open-circuit-protection two end integrated chip based on diode chain is formed.
Restriction as to step in said method (one): the LED open-circuit-protection integrated chip manufacture in described step () on wafer comprises the following steps:
LED open-circuit-protection integrated chip manufacture in described step () on wafer comprises the following steps:
1) in the P-type silicon substrate made, form by diffusion or ion implantation N-type impurity the N trap active area that several have certain junction depth;
2) each N trap active area top layer oxidation photoetching P+ active area window, forms P+ active area by diffusion or ion implantation p type impurity;
3) each N trap active area top layer is oxidized photoetching N+ active area window again, forms N+ active area by diffusion or ion implantation N-type impurity;
4) be again oxidized lithography contact hole, depositing metal also etches formation metal electrode;
5) metal interconnecting wires makes: be connected N+ active areas all for same N trap active area, all P+ active areas are connected, form diode or the anti-parallel diodes with PN junction structure in parallel, all N+ active areas are as the negative electrode of diode or anti-parallel diodes, P+ active area is as the anode of diode or anti-parallel diodes, by Diode series, last diode cathode is connected with the anode of first diode simultaneously;
6) anode of first diode and last diode anode are connected respectively negative electrode, the anode of anti-parallel diodes, form the LED open-circuit-protection integrated chip based on diode chain.
Further restriction as to said method: described each diode and anti-parallel diodes are stayed alone a N trap active area, and all N trap active areas are produced in same P type substrate.
Further restriction as to said method: all N+ active areas of described each diode and anti-parallel diodes or metal electrode corresponding to all P+ active region are connected by metal interconnecting layer.
Owing to have employed above-mentioned technical scheme, compared with prior art, acquired technological progress is in the present invention:
(1) chip of the present invention is made up of forward diode chain and anti-parallel diodes, the conducting voltage of diode of all forward series connection of diode chain and the puncture voltage of anti-parallel diodes are higher than the conducting voltage of the LED group in parallel with it, lower than the maximum output voltage for whole LED illumination powering arrays module, thus ensure: when the LED group of parallel connection is normal, a voltage conducting LED group, when there is open circuit fault in the LED group of parallel connection, the chip that this diode chain of voltage meeting conducting is formed, ensures that the LED group of follow-up series connection normally works; When LED makes two ends cross high backward voltage due to static discharge, electrostatic induced current can be released by the diode of the reverse parallel connection in chip, prevents LED from burning;
(2) in forward diode chain of the present invention, all diode structures are identical with the structure of anti-parallel diodes, include P type substrate, several N trap active areas are diffuseed to form in P type substrate, the PN junction of each diode is produced in a N trap active area, therefore, between each diode, and the PN junction between each diode and anti-parallel diodes is isolated mutually by respective N trap active area, ensure that the stability of each diode and overall chip;
(3) be provided with the PN junction of multiple parallel connection in forward diode chain of the present invention in each diode and anti-parallel diodes, the On current of single diode can be strengthened, improve the conduction property of overall chip;
(4) all diodes in forward diode chain of the present invention and anti-parallel diodes are all produced in same P type substrate, can not only ensure the stability of chip, and reduce production cost, improve production efficiency.
In sum, the present invention can carry out open-circuit-protection to the LED group of series connection, when wherein one group of LED group breaks down, ensures that remaining LED group normally works; To LED two ends owing to realizing esd protection when electrostatic produces excessive reverse voltage, prevent LED from burning; Structure of the present invention is simple simultaneously, and stable performance, cost is low.
The present invention is applicable to open a way and esd protection to the LED illumination array of series connection arbitrarily.
The present invention is described in further detail below in conjunction with Figure of description and specific embodiment.
Accompanying drawing explanation
Fig. 1 is section and the plan structure schematic diagram of adjacent two series diode structures in forward diode chain in the embodiment of the present invention 1;
Fig. 2 is the internal structure vertical view of the embodiment of the present invention 1;
Fig. 3 is Fig. 2 equivalent schematic;
Fig. 4 is the structural representation done in substrate P after N trap of the embodiment of the present invention 2;
Fig. 5 is the structural representation after injecting on Fig. 4 Process ba-sis of the embodiment of the present invention 2 or diffusion p type impurity form P+ active area;
Fig. 6 is the structural representation after injecting on Fig. 5 Process ba-sis of the embodiment of the present invention 2 or diffusion N-type impurity form N+ active area;
Fig. 7 is being oxidized on Fig. 6 Process ba-sis of the embodiment of the present invention 2 and etches the structural representation after forming contact hole;
Fig. 8 is the depositing metal on Fig. 7 Process ba-sis of the embodiment of the present invention 2 and the structural representation after etching formation metal electrode;
Fig. 9 is the schematic diagram of LED open-circuit-protection integrated chip of the present invention in the application of LED open-circuit-protection;
In figure: 1-LED open-circuit-protection integrated chip, 2-diode, 10-P type substrate, 11-metal interconnecting layer; 20-N trap active area, 21-N+ active area, 22-P+ active area, 23-silicon dioxide layer; 24-metal electrode, 25-chip anode, 26-chip negative electrode, 3-LED module.
Embodiment
embodiment 1a kind of LED open-circuit-protection integrated chip based on diode chain
The present embodiment is a kind of LED open-circuit-protection integrated chip based on diode chain; as shown in Figure 1, Figure 2, Figure 3 shows; the described LED open-circuit-protection integrated chip 1 based on diode chain comprises the forward diode chain that identical several diode 2 forwards series connection of structure is formed; also comprise the anti-parallel diodes with forward diode chain reverse parallel connection; wherein the two ends of forward diode chain are as two metal electrodes of the LED open-circuit-protection integrated chip 1 based on diode chain, i.e. chip anode 25 and chip negative electrode 26.Describedly be greater than the LED conducting voltage of protection based on the conducting voltage of forward diode chain and the puncture voltage of anti-parallel diodes in the LED open-circuit-protection integrated chip 1 of diode chain; and be less than the output voltage of the external power source module of powering for LED, in forward diode chain, the number of diode 2 depends on single diode 2 forward conduction voltage swing and the LED conducting voltage for LED open-circuit-protection thereof.
Form based on all diodes 2 of the LED open-circuit-protection integrated chip 1 of diode chain and the structure of anti-parallel diodes identical; include stack gradually from bottom to up P type substrate 10, N trap active area 20, N+ active area 21 and P+ active area 22, silicon dioxide layer 23 and metal interconnecting layer 11; described N+ active area 21 forms the negative electrode of diode 2 or anti-parallel diodes, and P+ active area 22 forms the anode of diode 2 or anti-parallel diodes.Each diode 2 or anti-parallel diodes include several N+ active areas 21 and P+ active area 22, N+ active area 21 and P+ active area 22 number are determined as required, and in the present embodiment, each diode 2 and anti-parallel diodes adopt 4 N+ active areas 21 and 3 P+ active areas 22.N+ active area 21 and P+ active area 22 are disposed on the top of N trap active area 20 successively, and all N+ active areas 21 are connected, all P+ active areas 22 are connected.N+ active area 21 or P+ active area 22 area roughly the same with junction depth, and just contact hole is had to the silicon dioxide layer 23 on its upper strata, by forming metal electrode 24 one by one at contact hole depositing metal, metal electrode corresponding above the N+ active area 21 of all single diodes 2 or anti-parallel diodes, P+ active area 22 is connected by metal interconnecting layer 11.
Each diode 2 of described structure forward diode chain and anti-parallel diodes are stayed alone in a N trap active area 20 respectively, between each diode 2, and separate between diode 2 and anti-parallel diodes, and all N trap active areas 20 are located in same P type substrate 10.
embodiment 2a kind of manufacture method of the LED open-circuit-protection integrated chip based on diode chain
Present embodiments provide the manufacture method of LED open-circuit-protection integrated chip in a kind of embodiment 1, comprise the following steps:
(1) make on silicon chip containing several wafers based on the LED open-circuit-protection integrated chip of diode chain;
The making of wafer its comprise the following steps:
1) in the P type substrate 10 made, form by diffusion or ion implantation N-type impurity the N trap active area 20 that several have certain junction depth as shown in Figure 4;
2) on above-mentioned Process ba-sis, photoetching P+ active area window is oxidized to top layer, forms P+ active area 22 by diffusion or ion implantation p type impurity, as shown in Figure 5;
3) again photoetching N+ active area window is oxidized, by diffusion or ion implantation N-type impurity formation N+ active area 21 as shown in Figure 6;
4) be again oxidized photoetching contact hole as shown in Figure 7, depositing metal also etching forms metal electrode 24 as shown in Figure 8;
5) metal interconnecting layer makes: be connected all N+ active areas 21 in same N trap active area 20, all P+ active areas 22 are connected, form the diode with PN junction structure in parallel, N+ active area 21 is as the negative electrode of diode 2 or anti-parallel diodes, P+ active area 22 is as the anode of diode 2 or anti-parallel diodes, by all Diode series, the negative electrode of last diode 2 is connected with the anode of first diode 2 simultaneously, the forward series connection of diode, and diode chain and anti-parallel diodes is in parallel, all by metal interconnecting layer 11, N+ active area or P+ active area are connected, the interconnection of its top layer is as Fig. 1, shown in Fig. 2,
6) anode of first diode 2 and last diode 2 anode are connected respectively at the negative electrode of anti-parallel diodes, anode, form the LED open-circuit-protection integrated chip 1 based on diode chain.
When applying, the LED open-circuit-protection integrated chip 1 based on diode chain is connected in parallel on LED two ends, and its positive pole pole is connected with claimed LED anode, and negative pole is connected with LED negative electrode, and as shown in Figure 9, LED adopts constant current source power supply to application example figure.When protected LED normally works, the not conducting of LED open-circuit-protection integrated chip.When protected LED opens a way, forward series diode conducting in LED open-circuit-protection integrated chip thus ensure that other LED normally works; When high backward voltage appearred in LED two ends, in chip, backward diode conducting leakage current, prevented LED from burning.
Claims (10)
1. based on a LED open-circuit-protection integrated chip for diode chain,
it is characterized in that:the described LED open-circuit-protection integrated chip based on diode chain comprises the forward diode chain formed by identical several diode forward series connection of structure; also comprise one with the anti-parallel diodes of forward diode chain reverse parallel connection, the two ends of forward diode chain are as the both positive and negative polarity of the LED open-circuit-protection integrated chip based on diode chain.
2. the LED open-circuit-protection integrated chip based on diode chain according to claim 1,
it is characterized in that:the conducting voltage of forward diode chain and the puncture voltage of anti-parallel diodes are greater than the conducting voltage of LED, and when ensureing that LED normally works, chip turns off, LED open circuit or chip conducting when there is large reverse voltage;
The number of diodes of connecting in described forward diode chain depends on single diode forward conducting voltage size and the LED conducting voltage for open-circuit-protection thereof.
3. the LED open-circuit-protection integrated chip based on diode chain according to claim 2,
it is characterized in that:all diodes and the anti-parallel diodes structure of described formation forward diode chain are identical, include stack gradually from bottom to up P type substrate, N trap active area, N+ active area and P+ active area, silicon dioxide layer and metal interconnecting layer, described N+ active area forms the negative electrode of diode or anti-parallel diodes together, and P+ active area forms the anode of diode or reverse parallel connection diode together.
4. the LED open-circuit-protection integrated chip based on diode chain according to claim 3,
it is characterized in that:described each diode all and anti-parallel diodes comprise several N+ active areas and P+ active area, N+ active area and P+ active area are disposed on top, N trap active area successively, and all N+ active areas of each diode and anti-parallel diodes are connected, all P+ active areas of each diode and anti-parallel diodes are connected.
5. the LED open-circuit-protection integrated chip based on diode chain according to claim 4,
it is characterized in that:described N+ active area or P+ active region area identical with junction depth, and just contact hole is had to the silicon dioxide layer on its upper strata, by forming metal electrode at contact hole depositing metal, all N+ active areas of all each diodes and anti-parallel diodes or metal electrode corresponding to all P+ active region are connected by metal interconnecting wires.
6. the LED open-circuit-protection integrated chip based on diode chain according to claim 5,
it is characterized in that:described each diode and anti-parallel diodes are stayed alone a N trap active area, each diode and anti-parallel diodes mutually isolated, and all N trap active areas are located in same P type substrate.
7. based on a manufacture method for the LED open-circuit-protection integrated chip of diode chain,
it is characterized in that comprising the following steps:
(1) make containing several as the wafer of the LED open-circuit-protection integrated chip based on diode chain in claim 1 to 6 as described in any one on silicon chip;
(2) to the performance test of ready-made wafer, scribing, encapsulation, the single LED open-circuit-protection two end integrated chip based on diode chain is formed.
8. the manufacture method of the LED open-circuit-protection integrated chip based on diode chain according to claim 7,
it is characterized in that:lED open-circuit-protection integrated chip manufacture in described step () on wafer comprises the following steps:
1) in the P-type silicon substrate made, form by diffusion or ion implantation N-type impurity the N trap active area that several have certain junction depth;
2) each N trap active area top layer oxidation photoetching P+ active area window, forms P+ active area by diffusion or ion implantation p type impurity;
3) each N trap active area top layer is oxidized photoetching N+ active area window again, forms N+ active area by diffusion or ion implantation N-type impurity;
4) be again oxidized lithography contact hole, depositing metal also etches formation metal electrode;
5) metal interconnecting wires makes: be connected N+ active areas all for same N trap active area, all P+ active areas are connected, form diode or the anti-parallel diodes with PN junction structure in parallel, all N+ active areas are as the negative electrode of diode or anti-parallel diodes, P+ active area is as the anode of diode or anti-parallel diodes, by Diode series, last diode cathode is connected with the anode of first diode simultaneously;
6) anode of first diode and last diode anode are connected respectively negative electrode, the anode of anti-parallel diodes, form the LED open-circuit-protection integrated chip based on diode chain.
9. the manufacture method of the LED open-circuit-protection integrated chip based on diode chain according to claim 8,
it is characterized in that:described each diode and anti-parallel diodes are stayed alone a N trap active area, and all N trap active areas are produced in same P type substrate.
10. the manufacture method of the LED open-circuit-protection integrated chip based on diode chain according to claim 9,
it is characterized in that:all N+ active areas of described each diode and anti-parallel diodes or metal electrode corresponding to all P+ active region are connected by metal interconnecting wires.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510008847.9A CN104538417B (en) | 2015-01-08 | 2015-01-08 | LED open-circuit-protections integrated chip and its manufacture method based on diode chain |
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| CN201510008847.9A CN104538417B (en) | 2015-01-08 | 2015-01-08 | LED open-circuit-protections integrated chip and its manufacture method based on diode chain |
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| CN104538417B CN104538417B (en) | 2017-11-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105871342A (en) * | 2016-03-23 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Electrostatic discharge circuit and power amplifier |
| CN111149210A (en) * | 2017-10-06 | 2020-05-12 | 亮锐控股有限公司 | Method of manufacturing an OLED device |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
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| US6400204B1 (en) * | 2000-07-26 | 2002-06-04 | Agere Systems Guardian Corp. | Input stage ESD protection for an integrated circuit |
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| CN101958334A (en) * | 2007-03-19 | 2011-01-26 | 首尔Opto仪器股份有限公司 | Light emitting diode |
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| US5768342A (en) * | 1994-04-29 | 1998-06-16 | Mitel Corporation | Telephone system loop current detector |
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| CN105871342A (en) * | 2016-03-23 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Electrostatic discharge circuit and power amplifier |
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| CN111149210A (en) * | 2017-10-06 | 2020-05-12 | 亮锐控股有限公司 | Method of manufacturing an OLED device |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
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| CN104538417B (en) | 2017-11-03 |
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