CN104536231B - Electrochromic display device, its preparation method, cathode construction and micro- lattice array - Google Patents
Electrochromic display device, its preparation method, cathode construction and micro- lattice array Download PDFInfo
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- CN104536231B CN104536231B CN201510023465.3A CN201510023465A CN104536231B CN 104536231 B CN104536231 B CN 104536231B CN 201510023465 A CN201510023465 A CN 201510023465A CN 104536231 B CN104536231 B CN 104536231B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
Abstract
The invention discloses a kind of electrochromic display device, its preparation method, cathode construction and micro- lattice array, it is related to electrochromism technology, solve in existing electrochromic display device, the problems such as cathode material and anode material are easily polluted by encapsulant, and the technology difficulty of contraposition process is big when preparing the device.In the embodiment of the present invention, due to there is the height of three face exterior walls to exceed the height of micro- lattice in micro- lattice array in the exterior wall of micro- lattice array surrounding, tool drawer-like guide groove jaggy is formd；Again due to beyond height it is identical with the thickness of cathode thin film, and the inside dimension of drawer-like guide groove is matched with the peripheral dimension of the cathode thin film with barrier rib, therefore using drawer principle, ensure that anode material is fully sealed with simple method, simplify the technology difficulty of contraposition process, and barrier rib and the three face exterior walls that are higher by have sealed the side of cathode thin film, it is to avoid the problem of negative electrode, anode material are polluted by encapsulant.
Description
The application is to be directed to the applying date on May 23rd, 2011, and Application No. 201110134847.5 is entitled
The divisional application that the Chinese patent application of " electrochromic display device, its preparation method, cathode construction and micro- lattice array " is proposed.
Technical field
The present invention relates to electrochromism technology, more particularly to electrochromic display device, its preparation method, cathode construction and
Micro- lattice array.
Background technology
Electrochromic display device (Electro chromic Device, referred to as ECD) is widely used in portable electric
In sub- equipment, such as personal digital assistant device, electric paper book.It has the pattern shown after low startup voltage, less energy consumption, open circuit can
The advantages of certain time is stored without energy consumption, small, easily fabricated expense, good contrast, wide visual angle.
The structure of existing electrochromic display device is as shown in figure 1, in the first ITO (tin indium oxide) film 12
Micro- lattice array 13 is formed with first ito thin film 12 of one base material 11, anode material 14, the anode are filled with each micro- lattice
Material 14 includes electrolyte and can realize the material of ion storing function.On micro- lattice array 13 successively covered with cathode thin film 15,
Second ito thin film 16 and the second base material 17, wherein, cathode thin film 15 is electrochromic material layer.
During existing electrochromic display device work, certain voltage, cathode thin film 15 are added between two ito thin films
Electrochromic material occur oxidation/reduction reaction under voltage effect, its color is changed or recover priming color；And
Electrolyte is made up of conductive material, for providing the ion needed for oxidation/reduction reaction；The material of ion storing function can be realized
Corresponding counter ion is stored when redox reaction occurs for electrochromic material so that whole system keeps charge balance.
The method of existing electrochromic display device shown in manufacture Fig. 1 comprises the following steps.
Step 1, preparation cathode portion.Formed on the second base material 17 after second ito thin film 16, cathode material is coated in
On second ito thin film 16, then dry, form cathode thin film 15.
Step 2, prepare anode part.Formed in the first base material 11 after first ito thin film 12, in the first ito thin film 12
One layer of radiation curing material of upper coating, unexposed part by its illumination curing and then is washed off, obtain micro- by photomask board
Lattice array 13, then pours into micro- lattice array 13 by the way of scratching or be filling by anode material 14.Micro- periphery of lattice array 13
Size is identical with the peripheral dimension of cathode thin film 15.
Step 3, laminating.Make after cathode thin film 15 is aligned with micro- lattice array 13, by cathode portion and anode part contraposition, patch
Conjunction forms box like structure, and cathode thin film 15 is covered on micro- lattice array 13.
Step 4, encapsulation.Encapsulant is coated on box like structure periphery, by the box like structure peripheral sealing so that negative electrode
Film 15 and anode material 14 be not exposed.
During above-mentioned electrochromic display device is manufactured, inventor has found at least to exist in the prior art and asked as follows
Topic：In laminating step, since it is desired that the exactitude position of cathode thin film and micro-cup array is carried out, if contraposition is inaccurate, the sun of liquid
Pole material will flow out, and cause the yield of product to decline so that contraposition process has higher technology difficulty；In encapsulation step
In, because the side of cathode thin film is exposed from the side of box like structure, directly it can be contacted with encapsulant, therefore negative electrode can be caused
Material is polluted by encapsulant, and inaccurate if there is above-mentioned contraposition, and anode material of the encapsulant with exposing can be caused to contact,
And pollute anode material.
The content of the invention
Embodiments of the invention provide a kind of electrochromic display device, its preparation method, cathode construction and micro- lattice array,
It can prevent the cathode material and anode material of the device from being polluted by encapsulant, and can reduce and aligned when preparing the device
The technology difficulty of journey.
To reach above-mentioned purpose, embodiments of the invention are adopted the following technical scheme that：
A kind of electrochromic display device, including：Micro- lattice array, the negative electrode sequentially formed on the second conductive base is thin
Anode material, the encapsulant are filled with film, the first conductive base and encapsulant, micro- lattice array in each micro- lattice
For sealing the cathode thin film and the anode material；At least one side of the cathode thin film has barrier rib, described
Barrier rib is identical with the thickness of the cathode thin film in the thickness on the first conductive base direction；Micro- lattice battle array
There is height of the height beyond micro- lattice of three face exterior walls in the exterior wall of row surrounding, there is breach to be formed above micro- lattice
Drawer-like guide groove, the height exceeded is identical with the thickness of the cathode thin film, the inside dimension of the drawer-like guide groove
Matched with the peripheral dimension of the cathode thin film with the barrier rib, so that the cathode thin film with the barrier rib
In the embedded drawer-like guide groove, and the barrier rib corresponds to the position of the breach.
A kind of preparation method of electrochromic display device, including：Cathode thin film is formed on the first conductive base；Institute
At least one side for stating cathode thin film forms barrier rib, and the barrier rib is on the first conductive base direction
Thickness is identical with the thickness of the cathode thin film；Micro- lattice array is formed on the second conductive base, micro- lattice array surrounding
There is height of the height beyond micro- lattice in micro- lattice array of three face exterior walls in exterior wall, lacked with being formed to have above micro- lattice
The drawer-like guide groove of mouth, the height exceeded is identical with the thickness of the cathode thin film, the inside chi of the drawer-like guide groove
The very little peripheral dimension with the cathode thin film with the barrier rib is matched；In each micro- lattice of micro- lattice array
Fill anode material；Make the cathode thin film, be directed at the relative another side in side with the barrier rib described in take out
The breach of drawer shape guide groove, the cathode thin film is pushed into the drawer-like guide groove, so that first and second conductive base, institute
State cathode thin film and be buckled into box like structure with micro- lattice array；The box like structure is encapsulated with encapsulant.
A kind of cathode construction of electrochromic display device, including cathode thin film, in addition to barrier rib, the stop bar shaped
Into at least one side in the cathode thin film, and thickness of the barrier rib on the direction perpendicular to the cathode thin film
It is identical with the thickness of the cathode thin film.
Micro- lattice array of a kind of electrochromic display device, with multiple micro- lattice of height identical, micro- lattice array four
There is height of the height beyond micro- lattice of three face exterior walls in the exterior wall in week, tool is jaggy to be taken out to be formed above micro- lattice
Drawer shape guide groove.
In electrochromic display device provided in an embodiment of the present invention, its preparation method, cathode construction and micro- lattice array, by
There is height of the height beyond micro- lattice in micro- lattice array of three face exterior walls in the exterior wall of micro- lattice array surrounding, it is square on micro- lattice
Into tool drawer-like guide groove jaggy, that face exterior wall without departing from micro- lattice corresponds to the position of breach, and the height that exterior wall exceeds
It is identical with the thickness of cathode thin film, the inside dimension of drawer-like guide groove and the peripheral dimension of the cathode thin film with barrier rib
Match somebody with somebody, therefore after cathode thin film and micro- lattice array fastening, anode material can be fully sealed for cathode thin film and the first conductive base.And
Fastening process make use of drawer principle, ensure that anode material is fully sealed with simple method, simplify the work of contraposition process
Skill difficulty.
Further, since barrier rib corresponds to the position of breach on drawer-like guide groove, therefore cathode thin film and micro- lattice array button
After conjunction, barrier rib can seal a side of cathode thin film, and the three face exterior walls that micro- lattice array is higher by sealed cathode thin film its
Its three side, will not be such that cathode thin film exposes from the side of box like structure, and therefore, encapsulant will not touch negative electrode, sun
Pole material, also avoids the problem of negative electrode, anode material are polluted by encapsulant.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is the profile of existing electrochromic display device；
Fig. 2 is the stereogram of cathode portion in electrochromic display device of the present invention；
Fig. 3 is the stereogram of electrochromic display device Anodic part of the present invention；
Fig. 4 is the profile that electrochromic display device cathode portion of the present invention fastens process with anode part.
Embodiment
The embodiment of the present invention provides a kind of electrochromic display device, including：Sequentially formed on the second conductive base
Anode material is filled with micro- lattice array, cathode thin film, the first conductive base and encapsulant, micro- lattice array in each micro- lattice
Material, the encapsulant is used to seal the cathode thin film and the anode material；At least one side of the cathode thin film
With barrier rib, the barrier rib is in the thickness on the first conductive base direction and the thickness of the cathode thin film
It is identical；There is height of the height beyond micro- lattice of three face exterior walls in the exterior wall of micro- lattice array surrounding, with micro- lattice
Top forms tool drawer-like guide groove jaggy, and the height exceeded is identical with the thickness of the cathode thin film, the drawer
The inside dimension of shape guide groove is matched with the peripheral dimension of the cathode thin film with the barrier rib, so as to stop with described
The cathode thin film of bar is embedded in the drawer-like guide groove, and the barrier rib corresponds to the position of the breach.
The embodiment of the present invention also provides a kind of preparation method of electrochromic display device, including：In the first conductive base
Upper formation cathode thin film；Barrier rib is formed at least one side of the cathode thin film, the barrier rib is perpendicular to described
Thickness on first conductive base direction is identical with the thickness of the cathode thin film；Micro- lattice battle array is formed on the second conductive base
Row, the height for having three face exterior walls in the exterior wall of micro- lattice array surrounding exceeds the height of micro- lattice in micro- lattice array, with
Tool drawer-like guide groove jaggy is formed above micro- lattice, the height exceeded is identical with the thickness of the cathode thin film,
The inside dimension of the drawer-like guide groove is matched with the peripheral dimension of the cathode thin film with the barrier rib；Described micro-
Anode material is filled in each micro- lattice of lattice array；Make the cathode thin film, with the barrier rib side phase
To another side be directed at the breach of the drawer-like guide groove, the cathode thin film is pushed into the drawer-like guide groove so that
First and second conductive base, the cathode thin film are buckled into box like structure with micro- lattice array；Institute is encapsulated with encapsulant
State box like structure.
The embodiment of the present invention provides a kind of cathode construction of electrochromic display device, including cathode thin film again, in addition to
Barrier rib, the barrier rib formation is at least one side of the cathode thin film, and the barrier rib is perpendicular to described the moon
Thickness on the direction of very thin films is identical with the thickness of the cathode thin film.
The embodiment of the present invention provides a kind of micro- lattice array of electrochromic display device again, micro- with multiple height identicals
There is height of the height beyond micro- lattice of three face exterior walls in lattice, the exterior wall of micro- lattice array surrounding, with micro- lattice
It is square into having drawer-like guide groove jaggy.
In electrochromic display device provided in an embodiment of the present invention, its preparation method, cathode construction and micro- lattice array, by
There is height of the height beyond micro- lattice in micro- lattice array of three face exterior walls in the exterior wall of micro- lattice array surrounding, it is square on micro- lattice
Into tool drawer-like guide groove jaggy, that face exterior wall without departing from micro- lattice corresponds to the position of breach, and the height that exterior wall exceeds
It is identical with the thickness of cathode thin film, the inside dimension of drawer-like guide groove and the peripheral dimension of the cathode thin film with barrier rib
Match somebody with somebody, therefore after cathode thin film and micro- lattice array fastening, anode material can be fully sealed for cathode thin film and the first conductive base.And
Fastening process make use of drawer principle, ensure that anode material is fully sealed with simple method, simplify the work of contraposition process
Skill difficulty.
Further, since barrier rib corresponds to the position of breach on drawer-like guide groove, therefore cathode thin film and micro- lattice array button
After conjunction, barrier rib can seal a side of cathode thin film, and the three face exterior walls that micro- lattice array is higher by sealed cathode thin film its
Its three side, will not be such that cathode thin film exposes from the side of box like structure, and therefore, encapsulant will not touch negative electrode, sun
Pole material, also avoids the problem of negative electrode, anode material are polluted by encapsulant.
Embodiment 1
The embodiment of the present invention provides a kind of electrochromic display device, and 2~Fig. 4 of reference picture, the structure to the device is carried out
It is described in detail.
Electrochromic display device includes：Micro- lattice array 32, the cathode thin film sequentially formed on the second conductive base 31
22nd, the first conductive base 21 and encapsulant (not shown).Anode material is filled with micro- lattice array 32 in each micro- lattice 33
Expect (not shown), the encapsulant is used to seal the cathode thin film 22 and the anode material；Cathode thin film 22
At least one side has barrier rib 23, the barrier rib 23 the thickness d 2 on the direction of the first conductive base 21 with
The thickness d 1 of cathode thin film is identical；There is the height of three face exterior walls in the exterior wall 34 of micro- surrounding of lattice array 32 beyond micro- lattice 33
Highly, has drawer-like guide groove 35 jaggy to be formed in micro- top of lattice 33.Wherein, exterior wall 34 exceeds height d3 and negative electrode
The thickness d 2 of film is identical, and the inside dimension (wide W2, long L2) of drawer-like guide groove and the cathode thin film 22 with barrier rib 23
Peripheral dimension (wide W1, long L1) matching so that cathode thin film 22 with barrier rib 23 is embedded in the drawer-like guide groove 35, and
Barrier rib 23 corresponds to the position of the breach.
In above-mentioned electrochromic display device, barrier rib 23 can by but be not limited to radiation curing material and be made, micro- lattice array
Can by but be not limited to radiation curing material and be made.The height ratio of the thickness of cathode thin film and micro- lattice can be 1：3~1：10, be preferably
1：5~1：8.
In addition, the encapsulant in above-mentioned electrochromic display device can be ultraviolet curing glue, or low temperature ring
Oxygen resin glue.
Due to there is the height of three face exterior walls to exceed the height of micro- lattice in micro- lattice array in the exterior wall of micro- lattice array surrounding,
Tool drawer-like guide groove jaggy is formd above micro- lattice, that face exterior wall without departing from micro- lattice corresponds to the position of breach, and exterior wall
The height exceeded is identical with the thickness of cathode thin film, and the inside dimension of drawer-like guide groove is outer with the cathode thin film with barrier rib
After all size matchings, therefore cathode thin film and micro- lattice array fastening, cathode thin film and the first conductive base can be complete by anode material
It is hermetically sealed.
Further, since barrier rib corresponds to the position of breach on drawer-like guide groove, therefore cathode thin film and micro- lattice array button
After conjunction, barrier rib can seal a side of cathode thin film, and the three face exterior walls that micro- lattice array is higher by sealed cathode thin film its
Its three side, will not be such that cathode thin film exposes from the side of box like structure, and therefore, encapsulant will not touch negative electrode, sun
Pole material, also avoids the problem of negative electrode, anode material are polluted by encapsulant.
Embodiment 2
The present embodiment provides a kind of preparation method of electrochromic display device, as shown in figs. 2 to 4, and this method is included such as
Lower step.
Step 1, the formation cathode thin film 22 on the first conductive base 21.
Step 2, the side of cathode thin film 22 formed barrier rib 23.
Specifically, as shown in Fig. 2 coating radiation curing material at least one side of the cathode thin film 22 and carrying out
Photocuring, with described in the cathode thin film 22 at least one side formed barrier rib 23, the barrier rib 23 perpendicular to
Thickness d 2 on the direction of first conductive base 21 is identical with the thickness d 1 of the cathode thin film 22.
It should be noted that：The number of barrier rib 23 is not limited to 1 shown in Fig. 2, preferably 3, can be formed respectively
On 3 sides of cathode thin film, when 3 sides are provided with the cathode thin film and micro- lattice array fastening described below of barrier rib
Afterwards, increased barrier rib can be better protected from anode material and cathode material is polluted by encapsulant.
The micro- lattice array 32 of step 3, formation with drawer-like guide groove 35.
Specifically, as shown in figure 3, forming micro- lattice array 32 on the second conductive base 31, micro- surrounding of lattice array 32
Exterior wall 34 in have three face exterior walls 34 height exceed micro- lattice array 32 in micro- lattice 33 height, with micro- lattice 33
It is square into having drawer-like guide groove 35 jaggy, the height d3 exceeded is identical with the thickness d 1 of the cathode thin film 22, institute
State the inside dimension (wide W2, long L2) and the periphery chi of the cathode thin film 22 with the barrier rib 23 of drawer-like guide groove 35
Very little (wide W1, long L1) is matched.I.e. the cathode thin film 22 with barrier rib 23 can just be contained in tool drawer-like guide groove jaggy
In 35.
It should be noted that：The number of micro- lattice is not limited to 4 shown in Fig. 3, can come according to different process requirements
Different numbers are set.
Step 4, in each micro- lattice 33 of micro- lattice array 32 fill anode material.
Step 5, it is buckled into box.
Specifically, as shown in figure 4, make the cathode thin film 22, with relative another in side with the barrier rib 23
One side is directed at the breach of the drawer-like guide groove 35, and the cathode thin film 22 is pushed into the drawer-like guide groove 35, so that
First conductive base 21, the second conductive base 31, the cathode thin film 22 are buckled into box-like knot with micro- lattice array 32
Structure.
Step 6, with encapsulant the box like structure is sealed, to form electrochromic display device.
In the present embodiment, due to having the height of three face exterior walls 34 in the exterior wall 34 of micro- surrounding of lattice array 32 beyond micro- lattice battle array
The height of micro- lattice in row 32, forms tool drawer-like guide groove 35 jaggy, without departing from that face exterior wall of micro- lattice above micro- lattice
The position of correspondence breach, therefore in the step of being buckled into box, only need to be by the side of the corresponding breach of cathode thin film 22 and breach
After contraposition, cathode thin film 22 is pushed into as pushing away drawer in drawer-like guide groove 35, so that it may complete cathode thin film 22 and micro- lattice battle array
The fastening of row 32；And because the height d3 that above-mentioned exterior wall 34 exceeds is identical with the thickness d 1 of cathode thin film, and drawer-like guide groove 35
Inside dimension (wide W2, long L2) match (wide W1, long L1) with the peripheral dimension of cathode thin film 22 with barrier rib 23, therefore
After cathode thin film 22 is fastened with micro- lattice array 32, anode material can be fully sealed for the conductive base 21 of cathode thin film 22 and first.
The present embodiment utilizes drawer principle, ensure that anode material is fully sealed with simple method, the technique for simplifying contraposition process
Difficulty.
Further, since in the step of being buckled into box, being will be relative with the side with barrier rib 23 on cathode thin film 22
Another side alignment notch, therefore after cathode thin film 22 and micro- lattice array 32 are fastened, barrier rib 23 can seal cathode thin film 22
A side, and the three face exterior walls 34 that micro- lattice array 32 is higher by have sealed 22 other three sides of cathode thin film, will not make the moon
Very thin films 22 are exposed from the side of box like structure, so that in subsequent encapsulation step, encapsulant will not touch negative electrode, sun
Pole material, also avoids the problem of negative electrode, anode material are polluted by encapsulant.
Embodiment 3
The present embodiment provides a kind of preparation method of electrochromic display device, and this method comprises the following steps.
Step 1, on the first conductive base form cathode thin film.The step is specifically included：A) on the first conductive base
Form the film forming groove that thickness is 20~40 μm；B) filled by the way of silk-screen printing, blade coating or spin coating in film forming groove
Cathode material；C) under 30 DEG C~50 DEG C, preferably 45 DEG C of environment temperature, 30min is toasted to the first conductive base, forms thick
Spend for 5~20 μm, preferably 10~15 μm of cathode thin film；D film forming groove) is removed.
Step 2, cathode thin film side formed barrier rib.
Specifically, coat radiation curing material at least one side of cathode thin film and carry out photocuring, with the moon
At least one described sides of very thin films forms barrier rib, the barrier rib the thickness on the first conductive base direction with
The thickness of the cathode thin film is identical.
The micro- lattice array of step 3, formation with drawer-like guide groove.
Specifically, the step includes：A) radiation curing material is coated on the second conductive base；B gray level mask plate) is passed through
By the radiation curing material illumination curing；C uncured radiation curing material) is cleaned to form micro- on second conductive base
Lattice array.Wherein, there is height of the height beyond micro- lattice in micro- lattice array of three face exterior walls in the exterior wall of micro- lattice array surrounding, with
Tool drawer-like guide groove jaggy is formed above micro- lattice, the height exceeded is identical with the thickness of the cathode thin film, and drawer-like is led
The inside dimension of groove is matched with the peripheral dimension of the cathode thin film with barrier rib.
In addition, the height ratio of the thickness of cathode thin film and micro- lattice can be 1：3~1：10, preferably 1：5~1：8, so that by
The electrochromic display device of above method formation has more preferable display performance.
Step 4, using blade coating or it is filling by the way of in each micro- lattice of micro- lattice array fill anode material.
Step 5, in vacuum environment, and environment temperature is under conditions of 45 DEG C, to make negative electrode thin by the way of infrared acquisition
Film, relative with the side with the barrier rib another side is directed at the breach of drawer-like guide groove, and the cathode thin film is pushed away
Enter drawer-like guide groove, so that first and second conductive base, the cathode thin film are buckled into box like structure with micro- lattice array.
Step 6, with encapsulant the box like structure is encapsulated, to form electrochromic display device.Wherein, encapsulant
It can be but be not limited to ultraviolet curing glue or Low-temperature epoxy resin glue.
It is micro- in micro- lattice array due to there is the height of three face exterior walls to exceed in the exterior wall of micro- lattice array surrounding in the present embodiment
The height of lattice, forms tool drawer-like guide groove jaggy above micro- lattice, and that face exterior wall without departing from micro- lattice corresponds to breach
Position, therefore in the step of being buckled into box, after need to only aligning the side of the corresponding breach of cathode thin film and breach, by negative electrode
Film is pushed into as pushing away drawer in drawer-like guide groove, so that it may complete the fastening of cathode thin film and micro- lattice array；Again due to above-mentioned
The height that exterior wall exceeds is identical with the thickness of cathode thin film, and the inside dimension of drawer-like guide groove and the negative electrode with barrier rib are thin
After the peripheral dimension matching of film, therefore cathode thin film and micro- lattice array fastening, cathode thin film and the first conductive base can be by anodes
Material is fully sealed.The present embodiment utilizes drawer principle, ensure that anode material is fully sealed with simple method, simplifies pair
The technology difficulty of position process.
Further, since in the step of being buckled into box, being will be relative with the side with barrier rib another on cathode thin film
After one side alignment notch, therefore cathode thin film and micro- lattice array fastening, barrier rib can seal a side of cathode thin film, and
The three face exterior walls that micro- lattice array is higher by have sealed other three sides of cathode thin film, will not make side of the cathode thin film from box like structure
While expose so that in subsequent encapsulation step, encapsulant will not touch negative electrode, anode material, also avoid negative electrode,
The problem of anode material is polluted by encapsulant.
It should be noted that：First and second conductive base in above-described embodiment can be transparent conducting glass, or be transparent exhausted
The structure that edge substrate bonds together with ITO.
Embodiment 4
The present embodiment provides a kind of cathode construction of electrochromic display device, as shown in Fig. 2 including cathode thin film 22,
Also include barrier rib 23, the barrier rib 23 forms at least one side in the cathode thin film 22, and the barrier rib 23
Thickness d 2 on the direction perpendicular to the cathode thin film 22 is identical with the thickness d 1 of the cathode thin film 22.
The present embodiment also provides a kind of micro- lattice array 32 of electrochromic display device, as shown in figure 3, with multiple height
The micro- lattice 33 of identical, wherein, the height for having three face exterior walls 34 in the exterior wall 34 of micro- surrounding of lattice array 32 exceeds micro- lattice
33 height, has drawer-like guide groove 35 jaggy to be formed in micro- top of lattice 33.
The cathode construction of above-mentioned electrochromic display device, micro- lattice array and their preparation method embodiment 1~
It is described in detail, will not be repeated here in embodiment 3.
The embodiment of the present invention is mainly used in Electronic Paper, portable type electronic product etc..
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention described should be defined by scope of the claims.
Claims (18)
1. a kind of electrochromic display device, including：Micro- lattice array for being sequentially formed on the second conductive base, cathode thin film,
Anode material, the sealing material use are filled with first conductive base and encapsulant, micro- lattice array in each micro- lattice
In the sealing cathode thin film and the anode material, it is characterised in that
One side of the cathode thin film has barrier rib, and the barrier rib is on the first conductive base direction
Thickness it is identical with the thickness of the cathode thin film；
Micro- lattice array, which has in multiple micro- lattice of height identical, and the exterior wall of micro- lattice array surrounding, three face exterior walls
Highly exceed the height of micro- lattice, have drawer-like guide groove jaggy, the height exceeded to be formed above micro- lattice
Degree is identical with the thickness of the cathode thin film, the inside dimension of the drawer-like guide groove and the negative electrode with the barrier rib
The peripheral dimension matching of film, so that the cathode thin film with the barrier rib is embedded in the drawer-like guide groove, and institute
State the position that barrier rib corresponds to the breach.
2. electrochromic display device according to claim 1, it is characterised in that the barrier rib is by radiation curing material
It is made.
3. electrochromic display device according to claim 1, it is characterised in that micro- lattice array is by radiation curing material
Material is made.
4. electrochromic display device according to claim 1, it is characterised in that the thickness of the cathode thin film with
The height ratio of micro- lattice is 1：3~1：10.
5. electrochromic display device according to claim 4, it is characterised in that the thickness of the cathode thin film with
The height ratio of micro- lattice is 1：5~1：8.
6. the electrochromic display device according to any one of Claims 1 to 5, it is characterised in that the encapsulant is
Ultraviolet curing glue or Low-temperature epoxy resin glue.
7. a kind of preparation method of electrochromic display device, it is characterised in that including：
Cathode thin film is formed on the first conductive base；
Barrier rib is formed in a side of the cathode thin film, the barrier rib is perpendicular to the first conductive base direction
On thickness it is identical with the thickness of the cathode thin film；
Micro- lattice array is formed on the second conductive base, micro- lattice array has multiple micro- lattice of height identical, and described micro-
There is height of the height beyond micro- lattice in micro- lattice array of three face exterior walls in the exterior wall of lattice array surrounding, with micro- lattice
It is square into having drawer-like guide groove jaggy, the height exceeded is identical with the thickness of the cathode thin film, the drawer-like
The inside dimension of guide groove is matched with the peripheral dimension of the cathode thin film with the barrier rib；
Anode material is filled in each micro- lattice of micro- lattice array；
Make the cathode thin film, with the relative another side in side with the barrier rib be directed at the drawer-like guide groove
Breach, the cathode thin film is pushed into the drawer-like guide groove, so that first and second conductive base, the cathode thin film
Box like structure is buckled into micro- lattice array；
The box like structure is encapsulated with encapsulant.
8. method according to claim 7 a, it is characterised in that side in the cathode thin film, which is formed, to stop
Bar, including：
The first radiation curing material is coated in a side of the cathode thin film and photocuring is carried out, with the cathode thin film
A side form the barrier rib.
9. method according to claim 7, it is characterised in that described that micro- lattice array, bag are formed on the second conductive base
Include：
The second radiation curing material is coated on second conductive base；
By gray level mask plate by the second radiation curing material illumination curing；
Uncured second radiation curing material is cleaned to form micro- lattice array on second conductive base.
10. method according to claim 7, it is characterised in that described in each micro- lattice of micro- lattice array
Anode material is filled, including：
By the way of scratching or be filling anode material is filled in each micro- lattice of micro- lattice array.
11. method according to claim 7, it is characterised in that described that cathode thin film, bag are formed on the first conductive base
Include：
The film forming groove that thickness is 20~40 μm is formed on first conductive base；
In the film forming with filling cathode material in groove by the way of silk-screen printing, blade coating or spin coating；
Under 30 DEG C~50 DEG C of environment temperature, 30min is toasted to first conductive base, it is 5~20 μm to form thickness
Cathode thin film；
Remove the film forming groove.
12. method according to claim 11, it is characterised in that described under 30 DEG C~50 DEG C of environment temperature, to institute
The first conductive base baking 30min is stated, the cathode thin film that thickness is 5~20 μm is formed, including：
Under 45 DEG C of environment temperature, 30min is toasted to first conductive base, the negative electrode that thickness is 5~20 μm is formed thin
Film.
13. method according to claim 11, it is characterised in that the thickness of cathode thin film is 10~15 μm.
14. method according to claim 7, it is characterised in that it is described make the cathode thin film, with stopping with described
The relative another side in the side of bar is directed at the breach of the drawer-like guide groove, including：
Make another side pair cathode thin film, relative with the side with the barrier rib by the way of infrared acquisition
The breach of the accurate drawer-like guide groove.
15. method according to claim 7, it is characterised in that it is described make the cathode thin film, with stopping with described
The relative another side in the side of bar is directed at the breach of the drawer-like guide groove, and the cathode thin film is pushed into the drawer-like leads
Groove, so that first and second conductive base, the cathode thin film are buckled into box like structure with micro- lattice array, including：
In vacuum environment, and environment temperature is under conditions of 45 DEG C, make the cathode thin film, with the side with the barrier rib
The relative another side in side is directed at the breach of the drawer-like guide groove, and the cathode thin film is pushed into the drawer-like guide groove, with
First and second conductive base, the cathode thin film is set to be buckled into box like structure with micro- lattice array.
16. the method according to any one of claim 7~15, it is characterised in that the thickness of the cathode thin film with it is described
The height ratio of micro- lattice is 1：3~1：10.
17. method according to claim 16, it is characterised in that the height of the thickness of the cathode thin film and micro- lattice
Than for 1：5~1：8.
18. the method according to any one of claim 7~15, it is characterised in that the encapsulant is ultraviolet curing
Glue or Low-temperature epoxy resin glue.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510023465.3A CN104536231B (en) | 2011-05-23 | 2011-05-23 | Electrochromic display device, its preparation method, cathode construction and micro- lattice array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510023465.3A CN104536231B (en) | 2011-05-23 | 2011-05-23 | Electrochromic display device, its preparation method, cathode construction and micro- lattice array |
| CN201110134847.5A CN102650787B (en) | 2011-05-23 | 2011-05-23 | Electrochromic display device, manufacturing method thereof, cathode structure and micro-grid array |
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| CN201110134847.5A Division CN102650787B (en) | 2011-05-23 | 2011-05-23 | Electrochromic display device, manufacturing method thereof, cathode structure and micro-grid array |
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| US6515787B1 (en) * | 2000-03-07 | 2003-02-04 | Eclipse Energy Systems, Inc. | Electrochromic layer |
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| JPH11101994A (en) * | 1997-09-29 | 1999-04-13 | Sony Corp | Picture display device of electrodeposition type |
| US6515787B1 (en) * | 2000-03-07 | 2003-02-04 | Eclipse Energy Systems, Inc. | Electrochromic layer |
| CN1389534A (en) * | 2001-06-04 | 2003-01-08 | 希毕克斯幻像有限公司 | Components for sealing mini-cup in mfg. of roller-to-roller display device and method thereof |
| CN1482509A (en) * | 2002-09-10 | 2004-03-17 | ϣ | An improved electrochromic or electrodeposition display and process for their manufacture |
| JP2007052109A (en) * | 2005-08-16 | 2007-03-01 | Dainippon Ink & Chem Inc | Electrochemical display element and method for manufacturing electrochemical display element |
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