CN104535821A - Working state indicating device - Google Patents

Working state indicating device Download PDF

Info

Publication number
CN104535821A
CN104535821A CN201410829243.6A CN201410829243A CN104535821A CN 104535821 A CN104535821 A CN 104535821A CN 201410829243 A CN201410829243 A CN 201410829243A CN 104535821 A CN104535821 A CN 104535821A
Authority
CN
China
Prior art keywords
resistance
chip microcomputer
hall element
working
working state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410829243.6A
Other languages
Chinese (zh)
Other versions
CN104535821B (en
Inventor
李大庆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Chimei Data Technology Co.,Ltd.
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201410829243.6A priority Critical patent/CN104535821B/en
Publication of CN104535821A publication Critical patent/CN104535821A/en
Application granted granted Critical
Publication of CN104535821B publication Critical patent/CN104535821B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Measurement Of Current Or Voltage (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides a working state indicating device, and belongs to the technical field of information safety. The working state indicating device comprises a Hall element, a single chip microcomputer and a display screen; the Hall element is used for monitoring current flowing through a power line, outputting a voltage signal in proportion to the current flowing through the power line, and then providing the signal to the single chip microcomputer; the single chip microcomputer processes the voltage signal provided by the Hall element and displays the signal on the display screen. The Hall element monitors the current flowing through the power line, and therefore the working load of the power line can be grasped constantly. Through the working state monitoring circuit, working point voltage of circuits in an information leakage prevention device is judged, a user can see whether the direct-current static working point is within the normal voltage range or not, and therefore whether the information leakage prevention device works normally or not is judged. The working state indicating device is simple in structure, small in size and capable of effectively judging the working sate of the information leakage prevention device.

Description

Work condition indicator
Technical field
The present invention relates to a kind of work condition indicator, particularly relating to a kind of for making state indicating device in Tempest device, belonging to field of information security technology.
Background technology
Along with the high speed development of social informatization, electronic message unit is constantly progress also, thus meets the needs that in people's daily life, information is interconnected.But electronic message unit is while message exchange, all to produce certain electromagnetic radiation, thus cause two kinds of results: the leakage of electromagnetic mutual interference and installation electromagnetical information, wherein electromagnetic mutual interference problem is the problem of people's extensive concern, the time that it is found relatively early, electromagnetic compatibility (EMC) technology produces for solving electromagnetic mutual interference problem, there now have been the Theory and technology basis of comparative maturity.The problem of electromagnetic information leakage was just taken seriously and concern in nearly decades, and compared with electromagnetic mutual interference problem, electromagnetic information leakage treatment technology more lays particular emphasis on information security field, and it causes serious threat to the security work of information.
Although electromagnetic information leakage protection is with detection technique and electromagnetic compatibility technology all based on electromagnetic radiation problem, there is difference with general electromagnetic compatibility technology again in it.Electromagnetic information leakage protection and detection technique are compared with general electromagnetic compatibility problem, it more lays particular emphasis on the weak electromagnetic wave radiation of electronic information technology equipment and the leakage of information caused, and general electromagnetic compatibility problem focuses on the microwave radiation at work of electronic equipment and the interference to other electronic equipment, it is indifferent to the information entrained by electromagnetic wave.In addition, process electromagnetic information leakage protection and more require that there is professional detection and testing apparatus with test problems than electromagnetic compatibility problem.Further, electromagnetic information leakage protection will follow TEMPEST standard with detection.In a word, electromagnetic information leakage protection and detection technique are compared with the electromagnetic interference problem of electronic equipment, and its technical requirement is higher, electromagnetic environment is more complicated, testing standard is stricter.
Along with the development of internet, computing machine has become a part indispensable in people's life.But computing machine, can constantly to a large amount of electromagnetic wave signal of radiation in space during its work as the equipment of a kind of information processing and exchange.This electromagnetic wave signal given off likely carries the important information that computing machine is processing, thus brings huge hidden danger to information security issue.At work, its mainboard, display and all kinds of interface data wire, cable etc. all can launch intensity electromagnetic radiation in various degree to computing machine.From the angle of electromagnetic radiation theory, these useful informations given off all may be received and reduce.
For relating computer, it is same radiated electromagnetic wave at work, and security information wherein is just likely received thus decodes, the leakage of this mode, has walked around the fire wall of computing machine and hardware isolated in interior a series of safeguard procedures.In this case, even if computing machine is not connected with any miscellaneous equipment the data that can be stolen too, so be not difficult to block passage of divulging a secret through the computing machine of special electromagnetic information safety and Protection.In general, the primary radiation source of computing machine concentrates on cable part, if its cable can not provide effective shielding or filtering, the radiation intensity of its electromagnetic leakage will strengthen greatly.
Summary of the invention
For overcoming the shortcoming existed in prior art, goal of the invention of the present invention is to provide a kind of work condition indicator, and it can judge the duty of Tempest device effectively, and then the leakage of information effectively preventing power lead radiation and cause.
For realizing described goal of the invention, the invention provides a kind of work condition indicator, comprise Hall element, single-chip microcomputer and display screen, wherein, described Hall element flows through the electric current of power lead for monitoring, and export one with the voltage signal of current in proportion flowing through power lead, be then supplied to single-chip microcomputer; Described single-chip microcomputer carries out process to the voltage signal that Hall element provides and shows on a display screen.
Preferably, work condition indicator also comprises working state monitoring circuit, and described working state monitoring circuit is used for judging the quiescent potential of the circuit in Tempest device, sees its DC static working point whether in normal voltage range.
Preferably, work condition indicator also comprises clock chip, described clock chip is for providing current temporal information, and the temporal information that single-chip microcomputer also provides according to clock chip shows current date Hour Minute Second and the working time of Tempest device on a display screen.
Preferably, the circuit in described Tempest device is white noise amplifying circuit.
Preferably, described white noise amplifying circuit at least comprises two-stage.
Preferably, described white noise amplifying circuit is three grades.
Compared with prior art, work condition indicator provided by the invention can judge the duty of Tempest device effectively, and then the leakage of information effectively preventing power lead radiation and cause.
Accompanying drawing explanation
Fig. 1 is the composition frame chart that the invention provides Tempest device;
Fig. 2 is the circuit diagram of noise generating device provided by the invention;
Fig. 3 is the composition frame chart of work condition indicator provided by the invention;
Fig. 4 is the circuit diagram of white noise amplifier provided by the invention;
Fig. 5 is the circuit diagram of working state monitoring circuit provided by the invention;
Fig. 6 is the circuit diagram of low-pass filter provided by the invention.
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing.
Fig. 1 is the composition frame chart that the invention provides Tempest device.As shown in Figure 1, Tempest device provided by the invention, comprise power-supply filter, AC/DC converter, noise-producing equipment, amplifier, low-pass filter and working state monitoring and display device (i.e. work condition indicator), described power-supply filter is power line carrier wave information on filter out power line, preferably, the stopband operating frequency range of power-supply filter is 150KHz to 400MHz; AC/DC converter, for being converted into direct supply from the taking-up AC power on line of electric force, mainly produces+5V and+7V direct supply, for follow-up noise-producing equipment, amplifier, duty and display device provide direct supply.Described noise-producing equipment is for generation of white noise; Described amplifier produces white noise information for amplifying noise-producing equipment; Described low-pass filter is used for carrying out filtering to the white noise information that amplifier amplifies, and preferably, the passband operating frequency range of low-pass filter is 0MHz to 300MHz; Described white noise is coupled on power lead by coupling mechanism, and described coupling mechanism is inductive coupler or capacity coupler.
Fig. 2 is the circuit diagram of noise generating device provided by the invention.As shown in Figure 2, noise generating device provided by the invention comprises low-pass filter and white noise generator, described low-pass filter is made up of inductance L 5, electric capacity C9, electric capacity C15 and electric capacity C16, the cathode output end of+7V direct current supply line connects the first end of described inductance L 5, second end of inductance L 5 all connects the first end of electric capacity C9, electric capacity C15 and electric capacity C16, the second end ground connection of electric capacity C9, electric capacity C15 and electric capacity C16; Second end of inductance L 5 is connected to the first end of resistance R3, and second end of resistance R3 is connected to the emitter of the transistor Q1 in white noise generator, and that is ,+7V power supply provides electric energy then to white noise generator through low-pass filter filtering ripple.Described inductance L 5 exchanges logical direct current for hindering.The present invention adopts a jumbo electric capacity C9, and the mode that is in parallel of the electric capacity C15 of two low capacities and electric capacity C16 substantially increases the filtering characteristic of ripple.White noise generation device is made up of transistor Q1, the base earth of transistor Q1, and collector is unsettled, and emitter connects second end of current-limiting resistance R3, is connected to the first end of coupling capacitance C17 simultaneously, namely outwards provides white noise information by coupling capacitance C17.White noise generator utilizes the breakdown characteristics of PN junction to produce wide band white noise.
Fig. 3 is the composition frame chart of work condition indicator provided by the invention.As shown in Figure 3, work condition indicator comprises single-chip microcomputer, LCDs, clock chip, Hall element and working state monitoring circuit, can show the working time, flow through the electric current of power-supply filter and current duty.Described Hall element flows through the electric current of power lead for monitoring, and export one with the voltage signal of current in proportion flowing through power lead, be then supplied to single-chip microcomputer; If the quiescent potential of the anti-information of working state monitoring main circuit to the white noise amplifier in Tempest device judges, see that whether its DC static working point is at normal voltage range; Single-chip microcomputer mainly processes the information of Hall element output and the information of working state monitoring circuit output, and shows in LCDs, also for showing the duty of white noise amplifier; Clock chip is for providing current temporal information, and the temporal information that single-chip microcomputer also provides according to clock chip is in the working time of the current date Hour Minute Second of liquid crystal display screen display and this device.
Fig. 4 is the circuit diagram of white noise amplifier provided by the invention.As shown in Figure 4, white noise amplifier provided by the invention comprises three grades, the white noise information that described amplifier produces for amplifying noise generator, and third stage amplifier successively dialogue noise information amplifies.First order amplifier, for amplifying the white noise signal that noise generating device produces, be supplied to second level amplifier after amplification to continue to amplify, it is made up of the first amplification chip MAR-8+ and peripheral circuit thereof, wherein, second end of the 1st pin butt coupling electric capacity C17 of the first amplification chip MAR-8+, the 2nd and 4 pin ground connection, the first end of the 3rd pin butt coupling electric capacity C18, provides drive singal through coupling capacitance C18 to second level amplifier; Power supply+5V provides suitable quiescent point to amplification chip MAR-8+ through biasing resistor R1 and inductance L 6 successively simultaneously, and electric capacity C11 and C12 plays the effect of ac short circuit ground connection.The white noise signal that second level amplifier amplifies for amplifying first order amplifier, be supplied to third level amplifier after amplification to continue to amplify, it is made up of the second amplification chip MAR-8+ and peripheral circuit thereof, wherein, second end of the 1st pin butt coupling electric capacity C18 of the second amplification chip MAR-8+, 2nd and 4 pin ground connection, the first end of the 3rd pin butt coupling electric capacity C19, provides drive singal through coupling capacitance C19 to third level amplifier; Power supply+5V provides suitable quiescent point to amplification chip MAR-8+ through biasing resistor R2 and inductance L 7 successively simultaneously, and electric capacity C13 and C14 plays the effect of ac short circuit ground connection, and electric capacity C10 is used for the ripple of filtering+5V power supply.The white noise signal that third level amplifier amplifies for amplifying second level amplifier, be supplied to rear class low-pass filter after amplification and carry out filtering, it is made up of the 3rd amplification chip MAR-8+ and peripheral circuit thereof, wherein, second end of the 1st pin butt coupling electric capacity C23 of the 3rd amplification chip MAR-8+, the first end of electric capacity C23 is connected to second end of resistance R9, and the first end of resistance R9 is connected to second end of electric capacity C19; Resistance R9 is for controlling output power; 2nd and the 4 pin ground connection of the 3rd amplification chip MAR-8+, the first end of the 3rd pin butt coupling electric capacity C24, provides signal through coupling capacitance C24 to low-pass filter; Power supply+5V provides suitable quiescent point to amplification chip MAR-8+ through biasing resistor R4 and inductance L 8 successively simultaneously, and electric capacity C21 and C22 plays the effect of ac short circuit ground connection, and electric capacity C20 is used for the ripple of filtering+5V power supply.
Fig. 5 is the circuit diagram of working state monitoring circuit provided by the invention.As shown in Figure 5, working state monitoring circuit provided by the invention: comparer, level translator and indicator, the quiescent operation point voltage of the every one-level of three grade of described comparer respectively in comparison amplifier and threshold values are to judge that whether every grade of amplifier operation is normal, level translator is used for providing threshold voltage, and comparative result is converted to high level or low level; Whether indicator is used to indicate amplifier operation normal, when pilot lamp is bright, represents working properly, when pilot lamp does not work, represents that work is abnormal.Comparer comprises the first electric switch, the second electric switch, the 3rd electric switch, the 4th electric switch, the 5th electric switch and the 6th electric switch, wherein, first electric switch is made up of transistor Q4, resistance R14, resistance R16 and diode D5, the emitter of transistor Q4 is connected to power supply+5V through resistance R14, collector is connected to ground through resistance R16, also be connected to the negative pole of diode D5, base stage is connected to the test side DT1 of the first order amplifier in amplifier; The positive pole of diode D5 is connected to the input end of level translator, i.e. the intermediate node of resistance R7 and resistance R10; Second electric switch is made up of transistor Q5, resistance R17, resistance R21 and diode D8, the emitter of transistor Q5 is connected to power supply+5V through resistance R17, collector is connected to ground through resistance R21, also be connected to the negative pole of diode D8, base stage is connected to the test side DT2 of the second level amplifier in amplifier; The positive pole of diode D8 is connected to the input end of level translator, i.e. the intermediate node that is in series of resistance R7 and resistance R10; 3rd electric switch is made up of transistor Q6, resistance R18, resistance R22 and diode D9, the emitter of transistor Q6 is connected to power supply+5V through resistance R18, collector is connected to ground through resistance R22, also be connected to the negative pole of diode D9, base stage is connected to the test side DT3 of the third level amplifier in amplifier; The positive pole of diode D9 is connected to the input end of level translator, i.e. the intermediate node that is in series of resistance R7 and resistance R10.4th electric switch is made up of diode D1, and the negative pole of diode D1 is connected to the test side DT1 of the first order amplifier in amplifier, and positive pole is connected to the input end of level translator, i.e. the intermediate node of resistance R7 and resistance R10; 5th electric switch is made up of diode D2, and the negative pole of diode D2 is connected to the test side DT2 of the second level amplifier in amplifier, and positive pole is connected to the input end of level translator, i.e. the intermediate node of resistance R7 and resistance R10.6th electric switch is made up of diode D3, and the negative pole of diode D3 is connected to the test side DT3 of the third level amplifier in amplifier, and positive pole is connected to the input end of level translator, i.e. the intermediate node that is in series of resistance R7 and resistance R10.
Level translator is made up of resistance R7, resistance R10, electric capacity C26, transistor Q2, resistance R5, resistance R8, resistance R11, resistance R13, transistor Q3 and resistance R6, wherein, resistance R7 and R10 is in series, and be connected between power supply+5V and ground, its intermediate node is the input end of level translator, electric capacity C26 is also connected in resistance R10 two ends, for filtering ripple, to prevent misoperation.Resistance R5 and R8 is in series, and be connected between power supply+5V and ground, the emitter that its intermediate node is transistor Q2 provides a suitable quiescent point, and the collector of transistor Q2 is through resistance R13 ground connection, and base stage is connected to the intermediate node that resistance R7 and R10 is in series.Transistor Q3 works on off state, and its collector is connected to power supply+5V through resistance R6, grounded emitter, and base stage is connected to the collector of transistor Q2 through resistance R11.
The quiescent point of amplification chip MAR-8+ is when 2.8-4V, be in normal operating conditions, when first order normal amplifier operation, the transistor Q4 being connected to DT1 is in conducting state, diode D5 is in cut-off state, diode D1 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series is unaffected, transistor Q2 is in cut-off state, the voltage at resistance R13 two ends is zero, transistor Q3 is also in cut-off state, R6 and R23 intermediate node voltage is+5V, for an input end of single-chip microcomputer provides high level, simultaneously light emitting diode D13 connects electricity and luminous, represent that first order amplifier operation is normal.When the quiescent point of the first amplifier MAR-8+ is higher than 4V, be in abnormal operating state, the diode D1 being connected to DT1 is in cut-off state, transistor Q4 is in cut-off state, diode D5 is in conducting state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact that Q4 ends and is less than+2V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, transistor Q3 is in saturation conduction state, R6 and R23 intermediate node voltage is less than 1V, for an input end of single-chip microcomputer provides low level, simultaneously light emitting diode D13 power-off and not luminous, represent that first order amplifier operation is abnormal, when the quiescent point of the first amplification chip MAR-8+ is lower than 2.8V, be in abnormal operating state, the diode D1 being connected to DT1 is in conducting state, transistor Q4 is in conducting state, diode D5 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact of D1 conducting and is less than+3.5V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, transistor Q3 is in saturation conduction state, R6 and R23 intermediate node voltage is less than 1V, for an input end of single-chip microcomputer provides low level, simultaneously light emitting diode D13 power-off and not luminous, represent that first order amplifier operation is abnormal.
When second level normal amplifier operation, the transistor Q5 being connected to DT2 is in conducting state, diode D8 is in cut-off state, diode D2 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series is unaffected, transistor Q2 is in cut-off state, the voltage at resistance R13 two ends is zero, transistor Q3 is also in cut-off state, R6 and R23 intermediate node voltage is+5V, for an input end of single-chip microcomputer provides high level, simultaneously light emitting diode D13 connects electricity and luminous, and expression second level amplifier operation is normal.When the quiescent point of the second amplification chip MAR-8+ is higher than 4V, be in abnormal operating state, the diode D2 being connected to DT2 is in cut-off state, transistor Q5 is in cut-off state, diode D8 is in conducting state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact that Q5 ends and is less than+2V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, transistor Q3 is in saturation conduction state, R6 and R23 intermediate node voltage is less than 1V, for an input end of single-chip microcomputer provides low level, simultaneously light emitting diode D13 power-off and not luminous, represent that second level amplifier operation is abnormal, when the quiescent point of the second amplification chip MAR-8+ is lower than 2.8V, be in abnormal operating state, the diode D2 being connected to DT2 is in conducting state, transistor Q5 is in conducting state, diode D8 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact of D2 conducting and is less than+3.5V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, for an input end of single-chip microcomputer provides low level, transistor Q3 is in saturation conduction state simultaneously, R6 and R23 intermediate node voltage is less than 1V, light emitting diode D13 power-off and not luminous, represent that second level amplifier operation is abnormal.
When third level normal amplifier operation, the transistor Q6 being connected to DT3 is in conducting state, diode D9 is in cut-off state, diode D3 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series is unaffected, transistor Q2 is in cut-off state, resistance R13 both end voltage is zero, transistor Q3 is also in cut-off state, R6 and R23 intermediate node voltage is+5V, for an input end of single-chip microcomputer provides high level, simultaneously light emitting diode D13 connects electricity and luminous, and expression third level amplifier operation is normal.When the quiescent point of the 3rd amplification chip MAR-8+ is higher than 4V, be in abnormal operating state, the diode D3 being connected to DT3 is in cut-off state, transistor Q6 is in cut-off state, diode D9 is in conducting state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact that Q6 ends and is less than+2V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, transistor Q3 is in saturation conduction state, R6 and R23 intermediate node voltage is less than 1V, for an input end of single-chip microcomputer provides low level, simultaneously light emitting diode D13 power-off and not luminous, represent that second level amplifier operation is abnormal, when the quiescent point of the 3rd amplification chip MAR-8+ is lower than 2.8V, be in abnormal operating state, the diode D3 being connected to DT3 is in conducting state, transistor Q6 is in conducting state, diode D9 is in cut-off state, the intermediate node voltage that resistance R7 and R10 is in series becomes by the impact of D3 conducting and is less than+3.5V, transistor Q2 is in conducting state, the voltage at resistance R13 two ends is greater than 1V, transistor Q3 is in saturation conduction state, R6 and R23 intermediate node voltage is less than 1V, for an input end of single-chip microcomputer provides low level, simultaneously light emitting diode D13 power-off and not luminous, represent that third level amplifier operation is abnormal.
Fig. 6 is the circuit diagram of low-pass filter provided by the invention, as shown in Figure 6, low-pass filter provided by the invention is 7 rank Tchebyscheff filters, is made up of inductance L 10, inductance L 11, inductance L 9, inductance L 12, electric capacity C27, electric capacity C28, electric capacity C29, electric capacity C25.Because triode punctures produced noise signal, broader bandwidth, if without restriction, probably affect other signal, so after generation noise, passed through low-pass filter, make its bandwidth restriction within the specific limits, the preferred passband operating frequency range of the present invention is 0MHz to 300MHz.
Below done to elaborate to design of the present invention and example by reference to the accompanying drawings; but those skilled in the art will be appreciated that; under the prerequisite not departing from the present invention's design, any improvement of making based on the present invention and convert the content still belonged in scope.

Claims (6)

1. a work condition indicator, is characterized in that, comprises Hall element, single-chip microcomputer and display screen, wherein, described Hall element flows through the electric current of power lead for monitoring, and export one with the voltage signal of current in proportion flowing through power lead, be then supplied to single-chip microcomputer; Described single-chip microcomputer carries out process to the voltage signal that Hall element provides and shows on a display screen.
2. work condition indicator according to claim 1, it is characterized in that, also comprise working state monitoring circuit, described working state monitoring circuit is used for judging the quiescent potential of the circuit in Tempest device, sees its DC static working point whether in normal voltage range.
3. work condition indicator according to claim 2, it is characterized in that, also comprise clock chip, described clock chip is for providing current temporal information, and the temporal information that single-chip microcomputer also provides according to clock chip shows current date Hour Minute Second and the working time of Tempest device on a display screen.
4. work condition indicator according to claim 3, is characterized in that, the circuit in described Tempest device is white noise amplifying circuit.
5. work condition indicator according to claim 4, is characterized in that, described white noise amplifying circuit at least comprises two-stage.
6. work condition indicator according to claim 5, is characterized in that, described white noise amplifying circuit is three grades.
CN201410829243.6A 2014-12-29 2014-12-29 Work condition indicator Active CN104535821B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410829243.6A CN104535821B (en) 2014-12-29 2014-12-29 Work condition indicator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410829243.6A CN104535821B (en) 2014-12-29 2014-12-29 Work condition indicator

Publications (2)

Publication Number Publication Date
CN104535821A true CN104535821A (en) 2015-04-22
CN104535821B CN104535821B (en) 2017-11-24

Family

ID=52851384

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410829243.6A Active CN104535821B (en) 2014-12-29 2014-12-29 Work condition indicator

Country Status (1)

Country Link
CN (1) CN104535821B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200986578Y (en) * 2006-12-29 2007-12-05 摩比天线技术(深圳)有限公司 Low noise amplifier monitor alarming device
CN202631624U (en) * 2012-06-29 2012-12-26 珠海派诺科技股份有限公司 Current detection device for Hall current transformer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200986578Y (en) * 2006-12-29 2007-12-05 摩比天线技术(深圳)有限公司 Low noise amplifier monitor alarming device
CN202631624U (en) * 2012-06-29 2012-12-26 珠海派诺科技股份有限公司 Current detection device for Hall current transformer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
钱月花: "使用Multisim进行电子电路故障诊断", 《沙洲职业工学院学报》 *

Also Published As

Publication number Publication date
CN104535821B (en) 2017-11-24

Similar Documents

Publication Publication Date Title
CN106159890A (en) Earth leakage protective device and earth leakage protecting method
CN203101558U (en) Fault screening device for electric equipment
CN204680005U (en) Working state monitoring circuit
CN104467922A (en) Information leakage prevention device
CN203358368U (en) Fault latch circuit of electric car controller
CN203519761U (en) Anti-error-connection detecting circuit for zero line and live line of AC power
CN204376901U (en) Tempest device
CN204376866U (en) Operating state classified Monitoring circuit
CN204374278U (en) Work condition indicator
CN104535821A (en) Working state indicating device
CN104484263A (en) Working condition monitoring circuit
CN104539283A (en) Operating state classification monitoring circuit
CN207116332U (en) Safety type relay control circuit
CN103376383B (en) Ground wire monitoring circuit and system
CN208401525U (en) A kind of electronic equipment measuring and controlling protective device
CN206249522U (en) Internet of Things intelligent safety and defence system based on cloud platform
CN202522657U (en) Ground wire monitoring circuit and system
CN205826162U (en) A kind of fiber optic temperature analyser
CN102843531A (en) Drive control circuit and television
CN209730792U (en) Short-circuit protection circuit and electronic equipment
CN206272215U (en) A kind of overload protecting circuit
CN103091544B (en) Direct current electric leakage detection circuit
CN206045237U (en) A kind of Internet of Things fire control system
CN205038492U (en) Multi -functional electronic traffic screen monitoring facilities
CN205139211U (en) Prevent high frequency and steal electric terminal box

Legal Events

Date Code Title Description
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20171026

Address after: 300000, Tianjin District, Xiqing hi tech development five, No. 16, No. 6 B-8 building, 2 floor

Applicant after: Tianjin Huaxin Military Technology Co.,Ltd.

Address before: 100086 unit 35, building 23, Xinjie street, 1602, Beijing, Haidian District

Applicant before: Li Daqing

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20230328

Address after: Room 401-26-14, Block G, Haitai Green Industrial Base, No. 6, Haitai Development Sixth Road, Huayuan Industrial Zone, Binhai New Area, Tianjin, 300000

Patentee after: Tianjin Rongxing Group Co.,Ltd.

Address before: Floor 6, Gate 2, Building B-8, Haitai Innovation Base, No. 16, Haitai Development Fifth Road, Xiqing District, Tianjin, 300000

Patentee before: Tianjin Huaxin Military Technology Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230829

Address after: Building 301-1, Building 16, Tongguang Group, No. 185 Xinda Road, Wanghailou Street, Hebei District, Tianjin, 300000

Patentee after: Tianjin Chimei Data Technology Co.,Ltd.

Address before: Room 401-26-14, Block G, Haitai Green Industrial Base, No. 6, Haitai Development Sixth Road, Huayuan Industrial Zone, Binhai New Area, Tianjin, 300000

Patentee before: Tianjin Rongxing Group Co.,Ltd.

TR01 Transfer of patent right