CN104518075B - 发光二极管封装结构 - Google Patents
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Abstract
本发明提供一种发光二极管封装结构,发光二极管封装结构包含至少一发光二极管单元、一封装体、以及至少一隔离膜。封装体包含多个表面及一出光面,多个表面其中一表面承载发光二极管单元。至少一隔离膜形成于多个表面中外露的其余表面上。发光二极管单元发射至少一正向光及一侧向光。通过至少一隔离膜可阻挡或反射侧向光,可增加正向光的发光强度。本发明的发光二极管封装结构制程简易,以一市售的发光二极管芯片即可直接加工而成,不需再使用额外治具,具有高经济效益。
Description
技术领域
一种发光二极管封装结构,尤其是指一种在封装体外设置有隔离膜的发光二极管封装结构。
背景技术
随着对能源议题的益趋热络,发光二极管照明装置也日益受到重视。基于发光二极管材料特性,使用已高度成熟的黄光制程可得到相当小的尺寸,且兼具有发光效率高、生命期长等优点,因此其应用面相当广泛。随着可携式电子装置如智能手机、PDA及小型平板电脑皆往微型化发展,具微缩尺寸的发光二极管封装结构常用以作为小型电子器件中背光的来源。
实际应用上,一发光二极管裸晶仍需要进行后续封装制程才能真正使用。封装制程其中的一步骤,是在发光二极管裸晶上形成一封装体。封装体承载发光二极管裸晶之上,其材质为环氧树酯或是硅基材料。封装体具有多种功能,例如保护发光二极管裸晶本身免于外界破坏、防湿气及防氧化等,或是有在封装体里掺入荧光转换材质,用以转换发光二极管芯片的发光波长,达到光色转换的目的。
传统发光二极管封装结构如图1所示,一杯体110具有一底部111及围绕底部111的侧面112,底部111及侧面112之间形成一容置空间120并具有一开口120a。一发光二极管芯片130置放于底部111。一封装体140被填充于容置空间120并承载发光二极管芯片130。杯体110的侧面112通常设置一反射面112a,令发光二极管芯片130的侧向发光为其反射,使光线往开口120a集中以增加发光效率。
在上述的发光二极管封装结构中,杯体110需额外设置,且封装体140往往先以液态填充于容置空间120,再经过硬化的步骤形成固态,此习用制程不仅增加额外成本,且于制程自动化整合及量产方面会受到限制。
发明内容
为解决上述问题,本发明提供一种发光二极管封装结构。在一发光二极管单元上承载一封装体,并在封装体外设置至少一隔离膜,隔离膜可阻挡或反射发光二极管单元的侧向光,借以增加发光二极管单元的正向光。本发明的发光二极管封装结构并兼具制程上的便利,可以市售的发光二极管芯片直接制作而成,可大幅降低制造成本。
本发明的一方面在提供一种发光二极管封装结构。发光二极管封装结构包含一发光二极管单元、一封装体以及至少一隔离膜。封装体包含若干表面及一出光面,且其中的一表面承载发光二极管单元。至少一隔离膜形成于若干表面中外露的其余表面上。其中,隔离膜可阻挡或反射发光二极管单元发射的部分光线。
在一实施例中,至少一隔离膜为二或以上于此若干表面中外露的其余表面上依序互相叠合的隔离膜。另外,各单一隔离膜或多层隔离膜总厚度介于0.2微米至20微米。此外,隔离膜可为一高分子材质、一无机化合物材质或一金属材质,金属材质可为铝、白金、黄金、银、锌或铜。无机化合物材质可为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝或氧化铝。
在另一实施例中,发光二极管单元为一垂直电极型发光二极管单元或一水平电极型发光二极管单元。此外,发光二极管封装结构中,于封装体下方可设置一基座或无基座,当设置有一基座时,基座承载发光二极管单元或封装体。再者,这些表面中外露的其余表面可为一倾斜面或一垂直面。
附图说明
图1绘示传统发光二极管封装结构示意图;
图2绘示依据本发明一实施例的发光二极管封装结构立体示意图;
图3A绘示依据图2的发光二极管封装结构延A-A线的剖面图;
图3B绘示依据图2的发光二极管封装结构另一实施例的剖面示意图;
图4绘示依据图2中发光二极管单元的另一实施例示意图;
图5绘示依据本发明另一实施例的发光二极管封装结构立体示意图;
图6绘示依据图5中封装体的另一实施例示意图。
具体实施方式
请参照图2、图3A及图3B,图2绘示依据本发明一实施例的发光二极管封装结构200示意图。图3A绘示依据图2的发光二极管封装结构200延A-A线的剖面图。图3B绘示依据图2的发光二极管封装结构200另一实施例的剖面示意图。
发光二极管封装结构200包含至少一发光二极管单元201、一封装体202、一第一隔离膜203a、一第二隔离膜203b、一第三隔离膜203c以及一承载基座204。在本发明中,发光二极管封装结构200可仅使用单一第一隔离膜203a,或使用二隔离膜(一第一隔离膜203a及一第二隔离膜203b)实施。而使用三隔离膜时,为本发明一较佳实施例,但并不以此为限,更可以使用三层以上隔离膜。
发光二极管单元201可为垂直电极型或水平电极型。在图2中,是以一水平电极型发光二极管单元201为例示。承载基座204设置于发光二极管单元201下方,其上设置有导电部201a及导电部201b供导电之用,导电部201a及导电部201b并以导线S电性连接于发光二极管单元201的正负电极端(未绘示),借此形成电性导通。
封装体202材质可为环氧树酯(EPOXY)或是硅基材料(SILICON),且封装体202可包含多个表面。在此实施例中,封装体202以一六面体为之,其包含五个表面202a、202c~202f及一出光面202b。表面202a用以承载发光二极管单元201。出光面202b供光线射出。
第一隔离膜203a形成于除了表面202a及出光面202b外的其余表面202c~202f上。第二隔离膜203b形成于第一隔离膜203a外侧,而第三隔离膜203c形成于第二隔离膜203b外侧。第一、第二或第三隔离膜(203a、203b、203c)形成的方式可用蒸镀、溅镀或其他方式,不再赘述。第一、第二或第三隔离膜(203a、203b及203c)的目的为阻挡发光二极管单元201的部分出光。大致上,发光二极管单元201发出一正向光L1及一侧向光L2。在此实施例中的配置,当侧向光L2发射至第一、第二或第三隔离膜(203a、203b及203c)时,为第一、第二或第三隔离膜(203a、203b、203c)所阻挡,而抑制了侧向光L2的出光。此时,正向光L1基于侧向光L2被抑制,进而减少了杂散光的影响,而促进了正向光L1的发光强度。在另一配置中,亦可使第一、第二或第三隔离膜(203a、203b、203c)阻挡正向光L1,而令发光二极管单元201的侧向光L2往另一出光面出光。
具体而言,隔离膜可为单层膜或多层膜结构。第一隔离膜203a、第二隔离膜203b及第三隔离膜203c皆各别可为高分子材质、无机化合物材质或金属材质。当第一隔离膜203a、第二隔离膜203b或第三隔离膜203c使用无机化合物材质时,无机化合物材质可为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝或氧化铝。在一较佳实施例中,第一隔离膜203a及第三隔离膜203c使用高分子材质,而第二隔离膜203b使用金属材质,金属材质可为铝、白金、黄金、银、锌或铜。当为单层膜(仅使用第一隔离膜203a)结构时,第一隔离膜203a的厚度可介于0.2微米至20微米。当使用多层膜结构时,第一隔离膜203a、第二隔离膜203b及第三隔离膜203c的总厚度亦控制在0.2微米至20微米。借此,使阻挡光的效果更好。
当第一隔离膜203a及第三隔离膜203c为高分子材质时,可具有绝缘抗湿特性,借此达到电性绝缘隔离的作用,并对封装体202及第二隔离膜203b形成抗湿、抗氧化的保护作用,增加发光二极管封装结构200的寿命。
当第二隔离膜203b为金属材质时,使发光二极管单元201的正向光L1或侧向光L2其中之一为其阻挡而出光被抑制,借此减少杂散光的影响而增加另一方向的发光强度。在一较佳实施例中,发光二极管单元201的正向光L1发光强度大于侧向光L2,因此侧向光L2被阻挡而增加正向光L1的发光强度。
在图3B中,发光二极管单元201采用一覆晶型发光二极管的形式。此时,可以发光二极管单元201本身的电极端作为导电部201a及导电部201b。制法上可直接以铸模成形(Molding)方式使封装体202承载发光二极管单元201,可免除基座204的设置,相对可降低制造成本。
请参照图4,图4绘示依据图2中发光二极管单元201的另一实施例示意图。在本发明中,发光二极管单元201的型式未受到限制。可使用如图2中所绘示的平面电极型或如本实施例所示的垂直电极型。在图4中,当使用垂直电极型发光二极管单元201时,由于正负电极端(未绘示)分别位于发光二极管单元201的上下方,因此可将其中的一电极端以导线S至导电部201a,而另一电极端则透过基座204电性连接于另一导电部201b,借此形成电性导通的用。
请参照图5,图5绘示依据本发明另一实施例的发光二极管封装结构300立体示意图。在本实施例中,发光二极管封装结构300与图2所绘示的发光二极管封装结构200类似。发光二极管封装结构300包含至少一发光二极管单元301、一封装体302、一第一隔离膜303a、一第二隔离膜303b、一第三隔离膜303c以及一基座304。
发光二极管单元301可为垂直电极型或水平电极型。在图5中,是以一水平电极型发光二极管单元301为例示。基座304设置于封装体302下方,是用以承载发光二极管单元301或封装体302,其上设置有导电部301a及导电部301b供导电之用,导电部301a及导电部301b并以导线S电性连接于发光二极管单元301的正负电极端,借此形成电性导通。
封装体302材质可为环氧树酯(EPOXY)或是硅基材料(SILICON),且封装体302可包含多个表面。在此实施例中,封装体302以一六面体为之,其包含五个表面302a、302c~302f以及一出光面302b。表面302a用以承载发光二极管单元301。出光面302b供光线射出。
第一隔离膜303a形成于除了表面302a及出光面302b外的其余表面302c~302f上。第二隔离膜303b形成于第一隔离膜303a外侧,而第三隔离膜303c形成于第二隔离膜303b外侧。第一、第二或第三隔离膜(303a、303b、303c)形成的方式可用蒸镀、溅镀或其他方式,不再赘述。第一、第二或第三隔离膜(303a、303b、303c)的目的在反射发光二极管单元301的部分出光。大致上,发光二极管单元301发出一正向光L1及一侧向光L2。在此实施例中的配置,当侧向光L2发射至第一、第二或第三隔离膜(303a、303b、303c)时,可为第一、第二或第三隔离膜(303a、303b、303c)所反射,借此使侧向光L2的光线路径改变而往正向光L1方向集中,如此可增加正向光L1的发光强度。在另一配置中,亦可使第一、第二或第三隔离膜(303a、303b、303c)反射正向光L1,而令发光二极管单元301的正向光L1路径改变往侧向光L2方向集中。
第一隔离膜303a、第二隔离膜303b及第三隔离膜303c皆各别可为高分子材质、无机化合物材质或金属材质。在一较佳实施例中,第一隔离膜303a及第三隔离膜303c使用高分子材质,而第二隔离膜303b使用金属材质,金属材质可为铝、白金、黄金、银、锌或铜。当第一隔离膜303a、第二隔离膜303b或第三隔离膜303c使用无机化合物材质时,无机化合物材质可为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝或氧化铝。
隔离膜可为单层膜或多层膜结构。当为单层膜(仅使用第一隔离膜303a)结构时,第一隔离膜303a的厚度可介于0.2微米至20微米。当使用多层膜结构时,第一隔离膜303a、第二隔离膜303b及第三隔离膜303c的总厚度亦控制在0.2微米至20微米。借此,使反射光的效果更好。
当第一隔离膜303a及第三隔离膜303c使用高分子材质时,可具有绝缘抗湿特性,借此达到电性绝缘隔离的作用,并对封装体302及第二隔离膜303b形成抗湿、抗氧化的保护作用,增加发光二极管封装结构300的寿命。
第二隔离膜303b为金属材质时,使发光二极管单元301的正向光L1或侧向光L2其中之一为其反射,借此增加另一方向的发光强度。在一较佳实施例中,发光二极管单元301的正向光L1发光强度大于侧向光L2发光强度,因此侧向光L2被反射而增加正向光L1的发光强度。
请参照图6,图6绘示依据图5中封装体302的另一实施例示意图。图6中,为达到更好的反射效果,封装体302的表面302c~302f可形成倾斜面,借此使侧向光L2的反射具有多种角度变化,使正向光L1发光强度更强、发光效率更佳。
综合以上,本发明提供一种发光二极管封装结构。发光二极管封装结构包含至少一发光二极管单元、一封装体以及至少一隔离膜。封装体的一表面承载发光二极管单元,达到抗湿、抗氧化、抗震及延长寿命等效果,并具有一出光面供出光之用。至少一隔离膜设置于封装体外,供阻挡或反射发光二极管单元的侧向光或正向光,以增加发光效率。本发明的发光二极管封装结构制程简易,以市售的发光二极管芯片即可制作成可直接使用的发光二极管封装结构,不需额外治具,可降低制作成本。
Claims (8)
1.一种发光二极管封装结构,其特征在于,包含:
至少一发光二极管单元;
一封装体,其包含若干表面及一出光面,这些表面其中的一表面承载该至少一发光二极管单元;以及
至少三隔离膜,依序互相叠合于这些表面中外露的其余表面上;
其中,该至少三隔离膜阻挡或反射该发光二极管单元发射的部分光线,
其中,所述三隔离膜包含第一隔离膜、第二隔离膜及第三隔离膜,所述第一隔离膜直接地接触这些表面中外露的其余表面且为高分子材质或无机化合物材质,所述第二隔离膜与所述第一隔离膜接触且为金属材质,所述第三隔离膜与所述第二隔离膜接触且为高分子材质或无机化合物材质。
2.根据权利要求1的发光二极管封装结构,其特征在于,这些隔离膜总厚度介于0.2微米至20微米。
3.根据权利要求1的发光二极管封装结构,其特征在于,该至少一隔离膜中,各该隔离膜厚度介于0.2微米至20微米。
4.根据权利要求1的发光二极管封装结构,其特征在于,该金属材质为铝、白金、黄金、银、锌或铜。
5.根据权利要求1的发光二极管封装结构,其特征在于,该无机化合物材质为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝或氧化铝。
6.根据权利要求1的发光二极管封装结构,其特征在于,该发光二极管单元为一垂直电极型发光二极管单元或一水平电极型发光二极管单元。
7.根据权利要求1的发光二极管封装结构,其特征在于,于该封装体下方无设置基座或设置一基座,当设置有一基座时,该基座承载该发光二极管单元或该封装体。
8.根据权利要求1的发光二极管封装结构,其特征在于,这些表面中外露的其余表面为一倾斜面或一垂直面。
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