CN104518074B - 发光二极管发光增益结构 - Google Patents

发光二极管发光增益结构 Download PDF

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CN104518074B
CN104518074B CN201310549866.3A CN201310549866A CN104518074B CN 104518074 B CN104518074 B CN 104518074B CN 201310549866 A CN201310549866 A CN 201310549866A CN 104518074 B CN104518074 B CN 104518074B
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light emitting
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lumination
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CN104518074A (zh
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邢陈震仑
洪荣豪
林鼎尧
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Prolight Opto Technology Corp
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Abstract

本发明提供一种发光二极管发光增益结构，包含一发光二极管单元及至少一镀覆膜。发光二极管单元包含若干表面及一出光面。至少一镀覆膜形成于部分的表面上。镀覆膜用以阻挡或反射发光二极管单元发射的部分光线，进而增益发光二极管单元透过出光面发射的光线。

Description

发光二极管发光增益结构
技术领域
一种发光二极管的发光增益结构，尤其是指一种发光二极管的正向光增益结构。
背景技术
发光二极管逐渐受到照明产业的重视，其能耗、发光效率及生命周期等特性皆优于传统照明装置；且其能使用光微影(Photolithography)技术制作，故能与集成电路(IC)的制程高度整合。因此在现代的电子器件中，以发光二极管为背光源相当常见。
发光二极管基本包含无机发光二极管和有机发光二极管。有机发光二极管因先天材料的限制，其发光效率及信赖度等特性仍无法及于无机发光二极管，因此目前在照明应用方面仍以无机发光二极管为大宗。
已知无机发光二极管由多层半导体层所组成。而在一最基本的无机发光二极管结构中，大致具有一P型半导体层及一N型半导体层。P型半导体层及一N型半导体层相接合而形成一P-N接面(P-N JUNCTION)。透过外界电流的驱动，由P型半导体层提供的电子及由N型半导体层提供的电洞结合于P-N接面而发光。
上述的无机发光二极管中，由P-N接面所发射出的光线包含正向光及侧向光。然而，受限于制程及几何结构，实际上正向光的发光强度会大于侧向光的发光强度。因此如何对正向光的增益为一必需考虑的课题。
为增益正向光，各种已知技术被开发出来。例如有利用额外增设的一反射结构与原有的发光二极管晶粒结合，借以使侧向光路径被反射而朝正向光方向集中，进而增加发光亮度；或改变发光二极管晶粒本体的结构，使由P-N接面发射的光线朝正向光方向集中。
在上述的发光二极管发光增益结构中，不论是额外增设的反射结构，或使发光二极管本体晶粒本体的结构产生变化，其制程甚为复杂且需增加额外的设备，此皆导致制造成本的提高。
发明内容
为解决上述问题，本发明提供一种发光二极管发光增益结构。直接在一发光二极管单元除出光面外的部分表面上形成至少一镀覆膜。镀覆膜可以是单层或多层结构，其可阻挡或反射发光二极管单元发射的侧向光，进而可减少侧向的杂散光或使侧向光路径改变朝向出光面方向，借此增加发光二极管单元的发光强度。
本发明的一方面在提供一种发光二极管发光增益结构，包含一发光二极管单元以及至少一镀覆膜。发光二极管单元包含若干表面及一出光面。至少一镀覆膜形成于部分的表面上，且镀覆膜阻挡或反射发光二极管单元发射的部分光线，进而增益发光二极管单元透过出光面发射的光线。
在一实施例中，镀覆膜为单层或二层以上于部分表面上依序形成的镀覆膜。其中，各镀覆膜的厚度可介于0.1微米至20微米，且这些镀覆膜厚度总合亦介于0.2微米至20微米。另外，镀覆膜材质为一高分子材质、无机化合物材质或金属材质。为金属材质时，可为铝、白金、黄金、银、锌或铜。无机化合物材质可为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝、氧化铝。
在另一实施例中，发光二极管单元发射至少一正向光及一侧向光，且隔离膜阻挡或反射发光二极管单元发射的侧向光。此外，发光二极管单元可为一垂直电极型发光二极管单元、一水平电极型发光二极管单元或一覆晶型发光二极管单元。另外，若干表面中的部分表面可为一倾斜面或一垂直面。
附图说明
图1绘示依据本发明一实施例的发光二极管发光增益结构立体示意图；
图2A绘示依据图1的发光二极管发光增益结构另一实施例的剖视图；
图2B绘示依据图2A中的发光二极管单元所发射光线的另一实施例示意图；
图3绘示依据图2A的发光二极管发光增益结构的另一实施例示意图；
图4绘示依据图2A的发光二极管发光增益结构的再一实施例示意图；
图5绘示依据图2A的发光二极管发光增益结构的又一实施例示意图。
具体实施方式
请参照图1及，图1绘示依据本发明一实施例的发光二极管发光增益结构100立体示意图。发光二极管发光增益结构100包含一发光二极管单元110以及至少一镀覆膜120。
发光二极管单元110可为垂直电极型或水平电极型。图1中以一水平电极型发光二极管单元110为例示。发光二极管单元110并包含电极131及电极132以为导电之用。发光二极管单元110可包含一基板(未绘示)或无基板。
发光二极管单元110由多层半导体叠合而成，其至少包含一P型半导体层111及一N型半导体层112。一PN接面A形成于P型半导体层111及一N型半导体层112接合处。
发光二极管单元110形成一六面体结构，其包含五个表面110a～110e及一出光面110f。在此等结构中，表面110a～110d大致垂直于PN接面A，而出光面110f及表面110e大致平行于PN接面A。以此视之，表面110a～110d可视为发光二极管单元110所形成的六面体结构的侧表面，而出光面110f及表面110e则分别为六面体结构的上下表面。
镀覆膜120形成的方式可用蒸镀、溅镀或其他方式形成于表面110a～110d上，其材质可为一高分子材质、无机材质或金属材质。当使用金属材质时，可为铝、白金、黄金、银、锌或铜。镀覆膜120目的为阻挡或反射发光二极管单元110的部分出光，其厚度介于0.1微米至20微米。在此厚度区间内，具有良好的阻挡或反射光线的效果。
请参照图2A，图2A绘示依据图1的发光二极管发光增益结构100另一实施例的剖视图。本发明的镀覆膜层数不受限制，可为单层膜结构或多层膜结构。较佳地，如图2A所绘示，是使用一三层膜结构。在如图1中的表面110a～110d上，形成有第一镀覆膜121、第二镀覆膜122以及第三镀覆膜123。第一镀覆膜121、第二镀覆膜122以及第三镀覆膜123分别依序叠合于表面110a～110d上。
第一镀覆膜121、第二镀覆膜122以及第三镀覆膜123分别可为高分子材质、无机化合物材质或金属材质。较佳地，第一镀覆膜121及第三镀覆膜123选取高分子材质，而第二镀覆膜122选取一金属材质。当使用金属材质时，可为铝、白金、黄金、银、锌或铜。第一镀覆膜121、第二镀覆膜122或第三镀覆膜123亦可选用无机化合物材质，无机化合物材质可为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝或氧化铝。
第一镀覆膜121及第三镀覆膜123选取高分子材质时，可达到保护效果(如电性绝缘、抗湿及抗氧等)，借此对发光二极管单元110及第二镀覆膜122形成抗湿、抗氧化的保护作用，增加发光二极管单元110的寿命。
大致上，发光二极管单元110由PN接面A发出一正向光L1及一侧向光L2。在此实施例中的配置，当侧向光L2发射至第一、第二或第三镀覆膜(121、122、123)时，为第一、第二或第三镀覆膜(121、122、123)所阻挡，而抑制了侧向光L2的出光。更精确言之，主要是受到第二镀覆膜122的阻挡。此时，正向光L1基于侧向光L2被抑制，进而减少了杂散光的影响，而促进了正向光L1的发光强度。第一镀覆膜121、第二镀覆膜122以及第三镀覆膜123各自厚度可介于0.1微米至20微米。当使用三层镀覆膜结构时，其总厚度控制在0.2微米至20微米，借此得到较佳的挡光效果。
请参照图2B，图2B依据图2A中的发光二极管单元110所发射光线的另一实施例示意图。在图2B中，当侧向光L2发射至第一、第二或第三镀覆膜(121、122、123)时，为第一、第二或第三镀覆膜(121、122、123)所反射，而改变了侧向光L2的光线路径。更精确言之，主要是受到第二镀覆膜122的反射而改变了光线的路径，使侧向光L2往正向光L1方向集中，借此可增加发光强度。在图2B中，第一、第二或第三镀覆膜(121、122、123)各层的材质、厚度如前述图2A中的实施例所提及，此不再赘述。
请参照图3，图3绘示依据图2A的发光二极管发光增益结构100的另一实施例示意图。在图3中，发光二极管单元110采用一覆晶型发光二极管的形式。与图2A不同的是，由PN接面A的发出的正向光L1为与电极131及电极132所在面的相反方向，借此避免光线被电极131及电极132阻挡，可获致更好的发光强度。第一、第二或第三镀覆膜(121、122、123)可阻挡或反射侧向光L2以增加正向光L1的发光强度，其各层的材质、厚度如前述实施例所提及，此不再赘述。
请参照图4，图4绘示依据图2A的发光二极管发光增益结构100的再一实施例示意图。在本发明中，发光二极管单元110的电极布置型式未受到限制。可使用如图2A中所绘示的平面电极型或如本实施例所示的垂直电极型。在图4中，电极131及电极132作为导电之用。第一、第二或第三镀覆膜(121、122、123)可阻挡或反射侧向光L2以增加正向光L1的发光强度，其各层的材质、厚度如前述实施例所提及，此不再赘述。
请参照图5，图5绘示依据图2A的发光二极管发光增益结构100又一实施例示意图。图5中，为了得到更好的光增益效果，表面110a～110d可设计成倾斜面，可具有多种反射角度变化，借此得到更好的反射效果。
综合以上，本发明提供一种发光二极管发光增益结构。发光二极管发光增益结构包含一发光二极管单元以及至少一镀覆膜。镀覆膜形成于发光二极管单元的部分表面上，供阻挡或反射由PN接面发射出的侧向光，以增加正向光发光强度而提高发光效率。本发明的发光二极管发光增益结构制程简易，直接以市售的发光二极管晶粒即可制作而成，不需再额外治具，可降低制作成本及工时。

Claims (8)

1.一种发光二极管发光增益结构，其特征在于，包含：
一发光二极管单元，其包含若干表面及一出光面，其中该些表面包含若干侧表面及用于设置若干电极的表面，且所述出光面用于允许该发光二极管单元内产生的若干光线通过；以及
至少三层镀覆膜，依序叠合于该些侧表面上，该镀覆膜阻挡或反射该发光二极管单元发射的部分光线，进而增益该发光二极管单元透过该出光面发射的光线，
其中，所述三层镀覆膜未与所述出光面以及该些电极所在的所述表面接触；
其中，所述三层镀覆膜包含第一镀覆膜、第二镀覆膜及第三镀覆膜，所述第一镀覆膜直接地接触所述发光二极管单元的该些侧表面且为高分子材质或无机化合物材质，所述第二镀覆膜与所述第一镀覆膜接触且为金属材质，所述第三镀覆膜与所述第二镀覆膜接触且为高分子材质或无机化合物材质。
2.根据权利要求1的发光二极管发光增益结构，其特征在于，所述镀覆膜厚度总合介于0.2微米至20微米。
3.根据权利要求1的发光二极管发光增益结构，其特征在于，各该镀覆膜厚度介于0.1微米至20微米。
4.根据权利要求1的发光二极管发光增益结构，其特征在于，该金属材质为铝、白金、黄金、银、锌或铜。
5.根据权利要求1的发光二极管发光增益结构，其特征在于，该无机化合物材质为氧化锆、二氧化钛、硫酸钡、二氧化硅、氮化铝、氧化铝。
6.根据权利要求1的发光二极管发光增益结构，其特征在于，该发光二极管单元发射至少一正向光及一侧向光，且所述三层镀覆膜阻挡或反射该发光二极管单元发射的该侧向光。
7.根据权利要求1的发光二极管发光增益结构，其特征在于，该发光二极管单元为一垂直电极型发光二极管单元、一水平电极型发光二极管单元或一覆晶型发光二极管单元。
8.根据权利要求1的发光二极管发光增益结构，其特征在于，所述表面中部分表面为一倾斜面或一垂直面。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
CN102308395A (zh) * 2009-02-10 2012-01-04 日亚化学工业株式会社 半导体发光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092659A (en) * 1977-04-28 1978-05-30 Rca Corporation Multi-layer reflector for electroluminescent device
TWM378464U (en) 2009-12-02 2010-04-11 Safety Traffic Equipment Co Ltd Modular LED illumination sign board apparatus
US9601657B2 (en) * 2011-03-17 2017-03-21 Epistar Corporation Light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
CN102308395A (zh) * 2009-02-10 2012-01-04 日亚化学工业株式会社 半导体发光装置

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