CN104505705B - It is all solid state from Raman femto-second laser - Google Patents
It is all solid state from Raman femto-second laser Download PDFInfo
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- CN104505705B CN104505705B CN201410660352.XA CN201410660352A CN104505705B CN 104505705 B CN104505705 B CN 104505705B CN 201410660352 A CN201410660352 A CN 201410660352A CN 104505705 B CN104505705 B CN 104505705B
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Abstract
It is specific open a kind of all solid state from Raman femto-second laser the present invention relates to short pulse laser technology field.The femto-second laser of the present invention, including：Semiconductor laser end pumping system, two-way Look mirror mix Yb tungstate crystals, two broadband negative dispersion mirrors, beam splitter, output coupling mirror, and the semiconductor saturable absorbing mirror of the light path arrangement of the vertical beam splitter；Wherein, two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, semiconductor saturable absorbing mirror constitute femtosecond laser resonant cavity, and two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, output coupling mirror constitute Raman resonant cavity.The present invention uses the Compound Cavity being made of femtosecond laser resonant cavity and Raman resonant cavity, and the laser crystal with stimulated raman scattering is placed in intracavitary；To realize frequency transformation using the nonlinear effect of laser crystal itself in femtosecond laser oscillator, the raman laser of wavelength near 1140nm is directly obtained, has the characteristics that output wavelength is unique, compact-sized, highly practical.
Description
Technical field
The present invention relates to short pulse laser technology fields, more particularly to a kind of all solid state from Raman femto-second laser.
Background technology
Femtosecond laser has the outstanding features such as pulse width is narrow, peak power is high, is ground in basic science such as physics, chemistry
Study carefully, the various fields such as micro-nano technology, life medicine, information communication, military and national defense, satellite ranging are used widely, be above-mentioned
The exploration and development of leading-edge field provide strong tool.
Currently, ti:sapphire laser femto-second laser is technology maturation, the most commonly used femto-second laser of application field the most.Doping
The solid laser material of rare earth element is another kind of important laser material.Wherein, mix Yb rare earth ions laser material and its
Laser, compared with titanium precious stone laser, simple level structure, lower quantum defect, broadband emission spectra, can be by big work(
Rate InGaAs diode-end-pumpeds.To reduce the link of energy transmission, laser transformation efficiency also greatly improves, and swashs
The cost of photosystem substantially reduces.All solid state femtosecond laser since above-mentioned rare earth doped element laser device has become the nearly more than ten years
The research hotspot of technology, and be used widely in fields such as optic communication, medicine, military affairs, Strong-field physics.
But ti sapphire laser, mix Yb material laser devices etc. and limited by laser gain material level structure, it can only
A certain specific wavelength is exported, such as ti sapphire laser output wavelength mixes Yb material laser device output wavelengths near 800nm
Near 1030nm.With going deep into for research, the femtosecond laser of single wave band has been unable to meet application demand growing day by day, because
The production method of this more multiband femtosecond laser becomes urgent problem to be solved.
Invention content
The present invention is directed to overcome the defect of existing femto-second laser technology, new wavelength is obtained, is provided a kind of all solid state from drawing
Graceful femto-second laser.
To achieve the above object, the present invention uses following technical scheme：
Present invention offer is a kind of all solid state from Raman femto-second laser, including：Half be sequentially arranged along paths direction
Conductor laser end pumping system, two-way Look mirror mix Yb tungstate crystals, two broadband negative dispersion mirrors, beam splitter, coupling output
Mirror, and the vertically semiconductor saturable absorbing mirror of the light path arrangement of the beam splitter；
Wherein, the two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, semiconductor saturable absorbing mirror constitute femtosecond and swash
Optical cavity, the two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, output coupling mirror constitute Raman resonant cavity, described to mix Yb
Tungstate crystal is laser gain crystal.
In some embodiments, the semiconductor laser end pumping system includes the semiconductor laser of fiber coupling output
Device, collimating lens, focusing lens.Fiber coupling output semiconductor laser launch wavelength be 980nm, fiber core it is straight
Diameter is 100~200 microns.
In some embodiments, the two-way Look mirror is plane mirror；Membrane system is coated in the two-way Look mirror, the membrane system is pair
The pump light of 980nm wavelength is anti-reflection, to the basic frequency laser of 1030nm wavelength and the raman laser high reflection of 1140nm wavelength.
In some embodiments, the Yb tungstate crystals of mixing are cut along the Ng axis of crystal, and end face is with light path in horizontal plane
Angle is 1~2 degree；The crystal end-face is coated with membrane system, and the membrane system is to the pump light of 980nm wavelength, to 1030nm wavelength
Basic frequency laser and 1140nm wavelength raman laser it is anti-reflection.
In some embodiments, the broadband negative dispersion mirror is concave mirror, and radius of curvature is 100~400 millimeters；Institute
It states broadband negative dispersion mirror and is coated with membrane system, the membrane system is to have Negative Dispersion Properties to 1030nm wavelength, to the base of 1030nm wavelength
The raman laser high reflection of frequency laser and 1140nm wavelength.
In some embodiments, the beam splitter is coated with to the basic frequency laser high reflection of 1030nm wavelength and 1140nm wavelength
The antireflective membrane system of raman laser.
In some embodiments, it is 0.5%~5% membrane system that the output coupling mirror, which is coated with transmitance, and the membrane system is pair
The raman laser fractional transmission of 1140nm wavelength.
In some embodiments, the semiconductor saturable absorbing mirror operation wavelength be 1030nm, modulation depth be 0.5%~
2%.
The beneficial effects of the present invention are：Using semiconductor laser end pumping system, by femtosecond laser resonant cavity and
The Compound Cavity that Raman resonant cavity is constituted places the laser crystal with stimulated raman scattering in intracavitary；To utilize femtosecond
The nonlinear effect of laser crystal itself realizes frequency transformation in laser oscillator, directly obtains the Raman of wavelength near 1140nm
Laser has the characteristics that output wavelength is unique, compact-sized, highly practical.
Description of the drawings
Fig. 1 schematically shows according to an embodiment of the invention all solid state from Raman femto-second laser structural schematic diagram.
Fig. 2 is the schematic diagram of semiconductor laser end pumping system 1 in Fig. 1.
Semiconductor laser end pumping system 1；Two-way Look mirror 2；
Mix Yb tungstate crystals 3；Broadband negative dispersion mirror 4；
Beam splitter 5；Semiconductor saturable absorbing mirror 6
Output coupling mirror 7；
The semiconductor laser 11 of fiber coupling output；Collimation lens 12；
Condenser lens 13.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with attached drawing and specific implementation
Example, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only explaining this hair
It is bright, but not to limit the present invention.
It is femtosecond laser material that a kind of utilization of present invention offer, which mixes Yb tungstate crystals not only, but also stimulated Raman scattering material
Double grading, to obtain the femtosecond laser of wavelength near 1140nm.
Referring to FIG. 1, showing according to an embodiment of the invention all solid state from Raman femto-second laser.
Including：The semiconductor laser end pumping system 1 that is sequentially arranged along paths direction, mixes Yb at two-way Look mirror 2
Tungstate crystal 3, two broadband negative dispersion mirrors 4, beam splitter 5, output coupling mirror 7, and the vertically light path arrangement of the beam splitter 5
Semiconductor saturable absorbing mirror 6；The femto-second laser of the present invention is compound cavity configuration.Wherein, above-mentioned light path is in zigzag.
Wherein, two-way Look mirror 2, two broadband negative dispersion mirrors 4, beam splitter 5, semiconductor saturable absorbing mirror 6 constitute femtosecond and swash
Optical cavity；Two-way Look mirror 2, two broadband negative dispersion mirrors 4, beam splitter 5, output coupling mirror 7 constitute Raman resonant cavity；Mix Yb wolframic acids
Salt crystal 3 is laser gain crystal, is also non-linear stimulated Raman scattering crystal.
The light that Yb tungstate crystals 3 are generated by the excitation of semiconductor laser end pumping system 1 is mixed, is successively born by two broadbands
After dispersion mirror 4 and a beam splitter 5 reflection, it is incident on semiconductor saturable absorbing mirror 6, semiconductor saturable absorbing mirror 6 is former by light
Road returns.Wherein, the concave surface of two broadband negative dispersion mirrors 4 is oppositely arranged.
Semiconductor laser end pumping system 1 include fiber coupling output semiconductor laser 11, collimation lens 12,
Condenser lens 13.It may be preferred that the semiconductor laser 11 of fiber coupling output uses peak power output 20W, launch wavelength
Near 980nm, a diameter of 100~200 microns of semiconductor laser of fiber core.As shown in Fig. 2, fiber coupling is defeated
The semiconductor laser 11 gone out sends out the diverging light of cone.The divergent beams for exporting fiber coupling by collimation lens 12 are accurate
Directly, condenser lens 13 focuses collimated light beam.
Two-way Look mirror 2 is that plane mirror is further coated with membrane system in two-way Look mirror 2, above-mentioned membrane system be to 980nm near
The pump light of wavelength is anti-reflection, raman laser high reflection to wavelength near the basic frequency laser and 1140nm of wavelength near 1030nm.
Wherein, membrane system is tantalum oxide/silica medium film, about 7.5 microns of thickness.
Crystal end-face reflection in order to prevent has an impact laser generation, and the Ng axis for mixing Yb tungstate crystals 3 along crystal is cut
It cuts, end face is 1~2 degree in horizontal plane angle with light path；Above-mentioned Yb tungstate crystals 3 of mixing are with stimulated raman scattering
Tungstate crystal (KGW or KYW) be that matrix mixes Yb ion laser crystal, wherein mix Yb ion concentrations and actual size root
It is selected according to practical application, for Yb ion dopings concentration usually 2%~5%, crystal length is usually 2mm~6mm.
Mix 3 end face of Yb tungstate crystals and be coated with membrane system, above-mentioned membrane system be it is anti-reflection to the pump light of wavelength near 980nm,
The raman laser of wavelength is anti-reflection near the basic frequency laser and 1140nm of wavelength near 1030nm.Wherein, membrane system is tantalum oxide dielectric
Film, thickness about 800nm.
The pump light that above-mentioned semiconductor laser end pumping system 1 is sent out is mixing Yb tungsten by 2 post-concentration of two-way Look mirror
Hydrochlorate crystal 3, to which the pump light that semiconductor laser end pumping system 1 is sent out is incorporated the absorption of Yb tungstate crystals 3.
Specifically, semiconductor laser end pumping system 1 includes the semiconductor laser 11 of fiber coupling output, collimation
Lens 12, condenser lens 13.The semiconductor laser 11 of fiber coupling output sends out the diverging light of cone.Collimation lens 12 will
The divergent beams collimation of fiber coupling output, condenser lens 13 focus collimated light beam.Focus on light beam enters mixing in resonant cavity
Yb tungstate crystals 3.
Broadband negative dispersion mirror 4 is concave mirror, and radius of curvature is 100~400 millimeters；Broadband negative dispersion mirror 4 is coated with
Membrane system, above-mentioned membrane system be to wavelength near 1030nm have Negative Dispersion Properties, near 1030nm the basic frequency laser of wavelength and
The raman laser high reflection of wavelength near 1140nm.Broadband negative dispersion mirror 4 in the embodiment of the present invention can compensate laser resonance
Intracavitary mixes the positive dispersion of the introducing of Yb tungstate crystals 3.Wherein, membrane system is tantalum oxide/silica Gires-Tournois types interference
Deielectric-coating, about 10 microns of thickness.
Beam splitter 5 is coated with the antireflective film of raman laser to the basic frequency laser high reflection and 1140nm wavelength of 1030nm wavelength
System.Wherein, membrane system is tantalum oxide/silica medium film, about 8 microns of thickness.
6 operation wavelength of above-mentioned semiconductor saturable absorbing mirror is near 1030nm, and modulation depth is 0.5%~2%, right
The laser part reflection of wavelength, semiconductor saturable absorbing mirror 6 start for realizing the mode locking of femto-second laser near 1030nm.
In the present invention, two-way Look mirror 2, two broadband negative dispersion mirrors 4, beam splitter 5, semiconductor saturable absorbing mirror 6, which are constituted, to fly
Second laser resonator, generates femtosecond laser.
Laser in femtosecond laser resonant cavity of the present invention generates stimulated Raman scattering by mixing Yb tungstate crystals 3 back and forth
Light, scattering light are reflected by two broadband negative dispersion mirrors 4, through beam splitter 5, are coupled out 7 part backtracking of mirror.Wherein, coupling
It closes outgoing mirror 7 and is coated with the membrane system to the raman laser fractional transmission of wavelength near 1140nm, transmitance is 0.5%~5%.Its
In, membrane system is tantalum oxide/silica medium film.
Two-way Look mirror 2, two broadband negative dispersion mirrors 4, beam splitter 5, output coupling mirror 7 constitute Raman resonant cavity, to by coupling
Close the Raman femtosecond laser that outgoing mirror 7 exports wavelength near 1140nm.
The embodiment of the present invention is compound using mixing Yb tungstate crystals, being made of femtosecond laser resonant cavity and Raman resonant cavity
Chamber places the laser crystal with stimulated raman scattering in intracavitary；To utilize laser crystal in femtosecond laser oscillator
The nonlinear effect of itself realizes frequency transformation, directly obtains the raman laser of wavelength near 1140nm, has output wavelength only
Special, compact-sized, highly practical feature.
The specific implementation mode of present invention described above, is not intended to limit the scope of the present invention..Any basis
Various other corresponding changes made by the technical concept of the present invention and deformation, should be included in the guarantor of the claims in the present invention
It protects in range.
Claims (6)
1. a kind of all solid state from Raman femto-second laser, which is characterized in that including：It is partly led along what paths direction was sequentially arranged
Body laser end pumping system, two-way Look mirror mix Yb tungstate crystals, two broadband negative dispersion mirrors, beam splitter, coupling output
Mirror, and the vertically semiconductor saturable absorbing mirror of the light path arrangement of the beam splitter；
Wherein, the two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, semiconductor saturable absorbing mirror composition femtosecond laser are humorous
Shake chamber, and the two-way Look mirror, two broadband negative dispersion mirrors, beam splitter, output coupling mirror constitute Raman resonant cavity, described to mix Yb wolframic acids
Salt crystal is laser gain crystal；It is 0.5%~5% membrane system that the output coupling mirror, which is coated with transmitance, and the membrane system is pair
The raman laser fractional transmission of 1140nm wavelength；The two-way Look mirror is plane mirror；It is coated with membrane system in the two-way Look mirror, it is described
Membrane system is anti-reflection to the pump light of 980nm wavelength, high to the basic frequency laser of 1030nm wavelength and the raman laser of 1140nm wavelength
Reflection；The broadband negative dispersion mirror is coated with membrane system, and the membrane system has Negative Dispersion Properties to 1030nm wavelength.
2. as described in claim 1 all solid state from Raman femto-second laser, which is characterized in that the semiconductor laser end face
The semiconductor laser that pumping system is exported comprising fiber coupling, launch wavelength 980nm, a diameter of the 100 of fiber core
~200 microns.
3. as described in claim 1 all solid state from Raman femto-second laser, which is characterized in that described to mix Yb tungstate crystals edge
The Ng axis of crystal is cut, and end face is 1~2 degree in horizontal plane angle with light path；It is described to mix the plating of Yb tungstate crystal crystal end-faces
It is to swash to the Raman of the pump light of 980nm wavelength, the basic frequency laser of 1030nm wavelength and 1140nm wavelength to have membrane system, the membrane system
Light is anti-reflection.
4. as described in claim 1 all solid state from Raman femto-second laser, which is characterized in that the broadband negative dispersion mirror is recessed
Face speculum, radius of curvature are 100~400 millimeters；The broadband negative dispersion mirror is coated with membrane system, and the membrane system is to 1030nm waves
The raman laser high reflection of long basic frequency laser and 1140nm wavelength.
5. as described in claim 1 all solid state from Raman femto-second laser, which is characterized in that the beam splitter is coated with pair
The antireflective membrane system of raman laser of the basic frequency laser high reflection and 1140nm wavelength of 1030nm wavelength.
6. as described in claim 1 all solid state from Raman femto-second laser, which is characterized in that the semiconductor saturable absorption
Mirror operation wavelength is 1030nm, and modulation depth is 0.5%~2%.
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| CN201410660352.XA CN104505705B (en) | 2014-11-19 | 2014-11-19 | It is all solid state from Raman femto-second laser |
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| CN104505705B true CN104505705B (en) | 2018-11-02 |
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2014
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