CN104486934A - Method for preparing high-orientation carbon nanotube film cooling fin - Google Patents
Method for preparing high-orientation carbon nanotube film cooling fin Download PDFInfo
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- CN104486934A CN104486934A CN201410788783.4A CN201410788783A CN104486934A CN 104486934 A CN104486934 A CN 104486934A CN 201410788783 A CN201410788783 A CN 201410788783A CN 104486934 A CN104486934 A CN 104486934A
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Abstract
The invention relates to a method for preparing a high-orientation carbon nanotube film cooling fin, and belongs to the technical field of thermal dissipation. The method for preparing the high-orientation carbon nanotube film cooling fin comprises the following steps: preparing a spinning carbon nanotube array, preparing a super-aligned carbon nanotube film by dry spinning, and preparing the high-orientation carbon nanotube film cooling fin by stacking on the surface of a chip. According to the method, a super-aligned spinning carbon nanotube array material is prepared by a CVD (Chemical Vapor Deposition) method, and a thickness-controllable high-orientation carbon nanotube film cooling fin is obtained by applying dry direct spinning on the surface of the chip. The film cooling fin has a quite high heat conductivity, so that a larger effective surface area is created on the surface of the chip to transmit heat to the outside environment through a radiator, accordingly, the running temperature of the chip is decreased.
Description
Technical field
The present invention relates to a kind of preparation method of high-orientation carbon nanotube film fin, belong to technical field of heat dissipation.
Background technology
According to the concept of Moore's Law and super mole, microelectric technique is constantly to the future development of more high-performance, more high integration, more small size.Along with concentrating and the reduction of size of chip functions, electronic component and system constantly diminish and accelerate, and chip power density improves constantly, and operating temperature improves.Particularly those are integrated with high power device and the heat that the circuit with more labyrinth distributes may reach 400W/cm
2even more.Photoelectric device density of heat flow rate as Huawei is 100 W/cm
2left and right, the density of heat flow rate produced in its running of computer CPU reaches 100-400W/cm
2, in some semiconductor laser device, even reach 2000-3000W/cm
2.The excessive temperature brought thus will reduce the job stability of chip, increases error rate, and the thermal stress simultaneously formed between inside modules and its external environment condition directly can have influence on electrical property, operating frequency, the mechanical strength and reliability of chip.Advanced cooling encapsulation technique and the heat sink material of excellent performance must be adopted, the heat of generation is distributed rapidly, thus ensure that chip normally works in the maximum temperature that can bear.High power electronic device heat sink material and application technology are one of indispensable core support technology in the strategic industry fields such as state aviation, space flight, information, microelectronics, military project.
Typical thermal management system is by external refrigeration device, radiator and heating power cross section composition.And the critical function of fin creates maximum effective surface area, this on the surface heating power be transferred and taken away by extraneous cooling media.This patent adopts the super in-line arrangement of method preparation of CVD to arrange can spinning carbon nano pipe array material, obtains the controlled high-orientation carbon nanotube film fin of thickness at chip surface by dry method direct fabrics technology.Because this film fin has very high thermal conductivity (1400W/m
-1k
-1), can larger effective surface area be createed at chip surface and heat is transferred to external environment by radiator, reduce the operating temperature of chip.In addition, this fin preparation method technique is simple, cost is low, wherein can spinning carbon nano pipe array raw material and dry spinning film technique full-fledged, be applicable to semiconductor batch prepare requirement.
Accelerate along with electronic component and system constantly diminish, heat treatment and reliability become the key issue affecting their life-spans.The heat management of the high hot-fluid focus in local is the key of high-power electronic device, and inconsistent heat radiation can cause special area in chip overheated, affects the reliability of electronic system performance and electronic device.In recent years, Graphene, monoatomic layer carbon are due to strong sp
2key brings the thermal conductivity 5300W/mK of superelevation, is suggested and can be used as a kind of promising heat sink material.Yan etc. report the application of Graphene wadding in high power transistor heat management of peeling off, and hot(test)-spot temperature declines 20 DEG C, will extend an order of magnitude transistor life.Shanghai University Liu Jianying teaches the preparation method that patent (application number 201310118977.9) proposes a kind of effective Graphene fin.The important function of Graphene fin creates maximum effective surface area, this on the surface transistor focus heating power be transferred and taken away by extraneous cooling media.Graphene has very high thermal conductivity, but the preparation process relative complex of Graphene, and often there is a large amount of defect in prepared Graphene, and therefore, still there is a lot of technological challenge in the controlled synthesis of high thermal conductivity graphite alkene fin.In addition, the mass preparation technology of Graphene fin is still immature, limits the development of its commercial application.
Carbon nano-tube has very excellent hot property equally, is subject to the extensive concern of research field and industrial circle.Super in-line arrangement row carbon nano-tube film material is a kind of special carbon nano-tube film material, and first Tsing-Hua University Jiang Kaili, Fan Shoushan professor in 2002 finds can spinning carbon nano pipe array material, has started the new application of super in-line arrangement carbon nano pipe array.Super in-line arrangement carbon nano pipe array can obtain super in-line arrangement carbon nano-tube film material by the method for the direct membrane of dry method.Result of study shows, super in-line arrangement carbon nano-tube film has very high thermal conductivity (1400W/m
-1k
-1).In prepared by super in-line arrangement carbon nano-tube film mass, the main preparation technology of film adopts chemical vapor deposition method, process controllability is high, and Tianjin FCY Technologies Co., Ltd. has achieved the mass preparation technology exploitation of this film at present, and is applied to the volume production of transparent conductive film.
Based on above-mentioned technological development background, this patent obtains the controlled high-orientation carbon nanotube film fin of thickness at chip surface by dry method direct fabrics technology, create larger effective surface area at chip surface and heat is transferred to external environment by radiator, reducing the operating temperature of chip.
Summary of the invention
The object of the invention is for high-power die provides a kind of more effective thermal management scheme, reduce chip operating temperature.
According to technical scheme provided by the invention, a kind of preparation method of high-orientation carbon nanotube film fin, step is:
(1) can the preparation of spinning carbon nano pipe array: provide one surpass in-line arrangement can spinning carbon nano pipe array presoma, growth obtains super in-line arrangement can spinning carbon nano pipe array;
(2) dry spinning: can prepare super in-line arrangement carbon nano-tube film material by spinning carbon nano pipe array by the method for direct membrane from super in-line arrangement, monolayer film thickness is 10-100nm;
(3) chip surface is stacking: preparing super in-line arrangement carbon nano-tube film fin with insulating barrier chip surface by the method that physics is stacking.
The preparation method of described high-orientation carbon nanotube film fin, concrete steps are as follows:
(1) can the preparation of spinning carbon nano pipe array: prepare material surpass in-line arrangement can spinning carbon nano pipe array presoma, be characterized in that in carbon nano pipe array, carbon nano-tube has the super in-line arrangement array structure perpendicular to growth substrate; Growth substrate option table surface roughness is less than silicon or the quartz substrate of 2nm; Catalyst adopts the Fe catalyst film that 0.3-3nm is thick; Growth carbon-source gas is ethene or acetylene gas;
Carry out reaction growth with the material prepared, growth temperature 650-760 DEG C, grow obtain super in-line arrangement can spinning carbon nano pipe array, be highly 100-400 μm;
(2) dry spinning: growing to step (1) the super in-line arrangement obtained can carry out membrane by spinning carbon nano pipe array, prepares super in-line arrangement single-layer carbon nano-tube film; Super in-line arrangement can in spinning carbon nano pipe array carbon nano-tube end to end, form continuous film; Membrane speed is 0.5-1m/s;
(3) chip surface is stacking: the super in-line arrangement single-layer carbon nano-tube film prepared in objective chip surface stacking procedure (2), and the superposition number of plies is 1-50 layer, obtains product high-orientation carbon nanotube film fin.
Control every layer of upper and lower Direction of superposition of super in-line arrangement single-layer carbon nano-tube film by carbon nano-tube film orientation angle in upper and lower double-layer films in step (3), thus obtain high-orientation carbon nanotube film fin.
The method that the high-orientation carbon nanotube film fin that step (3) obtains drips ethanol, acetone or ethylene glycol solution improves the contact area between fin and chip further, improves radiating effect.
Beneficial effect of the present invention: the present invention adopt the method for CVD to prepare super in-line arrangement arranges can spinning carbon nano pipe array material, obtain the controlled high-orientation carbon nanotube film fin of thickness at chip surface by dry method direct fabrics technology.Because this film fin has very high thermal conductivity, create larger effective surface area at chip surface and heat is transferred to external environment by radiator, reducing the operating temperature of chip.
Concrete effect is as follows:
(1) orientation carbon nanotube film has high thermal conductivity, excellent physics and chemistry stability, is conducive to the stable of the final encapsulating structure of device and performance.
(2) this film fin presoma can be prepared by the method for hot CVD by spinning carbon nano pipe array, and the method has that process controllability is high, environmental friendliness, process costs are low, can realize scale the advantage such as to prepare.Super in-line arrangement carbon nano-tube film obtains from the method for the direct membrane of presoma, and technology and equipment is simple.Therefore, preparation method's controllability of this fin is high, cost is low, environmental friendliness, can realize industrialization, mass preparation, there is market application foreground.
(3) individual layer surpasses in-line arrangement carbon nano-tube film thickness evenly, and the method that therefore super in-line arrangement carbon nano-tube film fin thickness can be superposed by plural layers accurately controls.
Super in-line arrangement carbon nano-tube film fin thermal conductivity has anisotropy along carbon nano-tube direction and vertical carbon nanotube direction, therefore on direction, can carry out management and control to hot-fluid in device heat management process.In addition, in single-layer carbon nano-tube membrane stack uplap in-line arrangement carbon nano-tube film fin preparation process, by to the design of carbon nano-tube orientation in each layer carbon nano-tube film and control, accurately can control and management and control heat in two-dimentional fin plane, thus advantageously in the raising of device encapsulation structure and heat dispersion.
Accompanying drawing explanation
Fig. 1 is the process chart of the present invention at the super in-line arrangement carbon nano-tube film fin of chip surface preparation.
Fig. 2 surpasses in-line arrangement carbon nano-tube film fin presoma can spinning carbon nano pipe array schematic diagram.
Fig. 3 a can spinning carbon nano pipe array membrane schematic diagram.
Fig. 3 b individual layer surpasses in-line arrangement carbon nano pipe array schematic diagram.
Fig. 4 chip surface prepares high-orientation carbon nanotube film heat radiating fin structure schematic diagram.
Description of reference numerals: 1, at the bottom of silicon wafer-based; 2, can spinning carbon nano pipe array; 3, carbon nano-tube film; 4, objective chip; 5, insulating barrier; 6, super in-line arrangement row carbon nano-tube film fin.
Embodiment
In following examples, dry spinning device therefor used is number of patent application: equipment described in 201110311780.8.
Embodiment 1
The preparation method of described high-orientation carbon nanotube film fin, concrete steps are as follows:
(1) can the preparation of spinning carbon nano pipe array: super in-line arrangement can spinning carbon nano pipe array presoma, is characterized in that in carbon nano pipe array, carbon nano-tube has the super in-line arrangement array structure perpendicular to growth substrate; Growth substrate selects 6 Inch to be with the substrate of silica silicon chip; Catalyst adopts the Fe catalyst film that 0.3nm is thick; Growth carbon-source gas is ethylene gas;
Growth course comprises: first at 6Inch with the silicon wafer-based basal surface of oxide layer by the thick aluminum oxide film of electron beam evaporation equipment evaporation one deck 50nm, and continue through electron beam evaporation equipment at the thick iron catalyst film of alumina surface evaporation one deck 0.3nm, namely obtaining can spinning carbon nano pipe array growth catalyst material.
The above-mentioned catalyst prepared is put into tubular type CVD growth apparatus growth chamber heat up, treat that temperature is elevated to after 750 degree, in CVD reaction chamber, pass into ethylene gas, argon gas and hydrogen, growth time is 10 minutes.Treat after reaction terminates that sample temperature is cooled to room temperature taking-up sample, namely obtaining growing height is that the super in-line arrangement of 100 microns can spinning carbon nano pipe array material.Can spinning carbon nano pipe array schematic diagram as shown in Figure 2.
(2) dry spinning: growing to step (1) the super in-line arrangement obtained can carry out membrane by spinning carbon nano pipe array, prepares super in-line arrangement single-layer carbon nano-tube film; Super in-line arrangement can in spinning carbon nano pipe array carbon nano-tube end to end, form continuous film; Membrane speed is 0.5m/s;
As best shown in figures 3 a and 3b, in carbon nano pipe array, carbon nano-tube is end to end, forms continuous film.In film, carbon nano-tube has very high orientation.
(3) chip surface is stacking: the super in-line arrangement single-layer carbon nano-tube film prepared in objective chip surface stacking procedure (2) of insulating barrier, and the superposition number of plies is 4 layers, obtains super in-line arrangement row carbon nano-tube film fin on chip base surface.As shown in Figure 4, in additive process, two-layer carbon nano-tube film carbon pipe orientation is identical for schematic diagram.
Drip ethanolic solution to carbon nano-tube film fin, improve further fin self density and fin and chip surface contact area, improve fin radiating effect.
Embodiment 2
The preparation method of described high-orientation carbon nanotube film fin, concrete steps are as follows:
(1) can the preparation of spinning carbon nano pipe array: super in-line arrangement can spinning carbon nano pipe array presoma, is characterized in that in carbon nano pipe array, carbon nano-tube has the super in-line arrangement array structure perpendicular to growth substrate; Growth substrate selects 6Inch to be with the substrate of silica silicon chip; Catalyst adopts the Fe catalyst film that 3nm is thick; Growth carbon-source gas is acetylene gas;
Growth course comprises: first at 6Inch with the silicon wafer-based basal surface of oxide layer by the thick iron catalyst film of electron beam evaporation equipment evaporation one deck 3nm, namely obtaining can spinning carbon nano pipe array growth catalyst material.The above-mentioned catalyst prepared is put into tubular type CVD growth apparatus growth chamber heat up, treat that temperature is elevated to after 680 degree, in CVD reaction chamber, pass into acetylene gas, argon gas and hydrogen, growth time is 10 minutes.Treat after reaction terminates that sample temperature is cooled to room temperature taking-up sample, namely obtaining growing height is that the super in-line arrangement of 200 microns can spinning carbon nano pipe array material.Can spinning carbon nano pipe array schematic diagram as shown in Figure 2, the vertical silicon chip substrate grown of carbon nano-tube, has very high orientation.
(2) dry spinning: growing to step (1) the super in-line arrangement obtained can carry out membrane by spinning carbon nano pipe array, prepares super in-line arrangement single-layer carbon nano-tube film; Super in-line arrangement can in spinning carbon nano pipe array carbon nano-tube end to end, form continuous film; Membrane speed is 1m/s;
As best shown in figures 3 a and 3b, in carbon nano pipe array, carbon nano-tube is end to end, forms continuous film.In film, carbon nano-tube has very high orientation.
(3) chip surface is stacking: the super in-line arrangement single-layer carbon nano-tube film prepared in objective chip surface stacking procedure (2), and the superposition number of plies is 4 layers, obtains product high-orientation carbon nanotube film fin.Schematic diagram as shown in Figure 4, two-layer carbon nano-tube film carbon pipe orientation alternating orthogonal in additive process.
Drip ethanolic solution to carbon nano-tube film fin, improve further fin self density and fin and chip surface contact area, improve fin radiating effect.
Embodiment 3
The preparation method of described high-orientation carbon nanotube film fin, concrete steps are as follows:
(1) can the preparation of spinning carbon nano pipe array: super in-line arrangement can spinning carbon nano pipe array presoma, is characterized in that in carbon nano pipe array, carbon nano-tube has the super in-line arrangement array structure perpendicular to growth substrate; Growth substrate selects quartz substrate; Catalyst adopts the Fe catalyst film that 2nm is thick; Growth carbon-source gas is ethylene gas;
Growth course comprises: first pass through the thick aluminum oxide film of electron beam evaporation equipment evaporation one deck 50nm on quartz substrate surface, and continue through electron beam evaporation equipment at the thick iron catalyst film of alumina surface evaporation one deck 2nm, namely obtaining can spinning carbon nano pipe array growth catalyst material.The above-mentioned catalyst prepared is put into tubular type CVD growth apparatus growth chamber heat up, treat that temperature is elevated to after 735 degree, in CVD reaction chamber, pass into ethylene gas, argon gas and hydrogen, growth time is 20 minutes.Treat after reaction terminates that sample temperature is cooled to room temperature taking-up sample, namely obtaining growing height is that the super in-line arrangement of 350 microns can spinning carbon nano pipe array material.
(2) dry spinning: growing to step (1) the super in-line arrangement obtained can carry out membrane by spinning carbon nano pipe array, prepares super in-line arrangement single-layer carbon nano-tube film; Super in-line arrangement can in spinning carbon nano pipe array carbon nano-tube end to end, form continuous film; Membrane speed is 0.8m/s;
(3) chip surface is stacking: the super in-line arrangement single-layer carbon nano-tube film prepared in objective chip surface stacking procedure (2), and the superposition number of plies is 50 layers, obtains product high-orientation carbon nanotube film fin.
Claims (4)
1. a preparation method for high-orientation carbon nanotube film fin, is characterized in that step is:
(1) can spinning carbon nano pipe array preparation: growth obtain super in-line arrangement can spinning carbon nano pipe array as the persursor material preparing carbon nano-tube film;
(2) dry spinning: can prepare super in-line arrangement carbon nano-tube film material by spinning carbon nano pipe array by the method for direct membrane from super in-line arrangement, monolayer film thickness is 10-100nm;
(3) the stacking preparation of chip surface surpasses in-line arrangement carbon nano-tube film fin: preparing super in-line arrangement carbon nano-tube film fin with insulating barrier chip surface by the method that physics is stacking.
2. the preparation method of high-orientation carbon nanotube film fin as claimed in claim 1, is characterized in that concrete steps are as follows:
(1) can the preparation of spinning carbon nano pipe array: prepare material surpass in-line arrangement can spinning carbon nano pipe array presoma, be characterized in that in carbon nano pipe array, carbon nano-tube has the super in-line arrangement array structure perpendicular to growth substrate; Growth substrate option table surface roughness is less than silicon or the quartz substrate of 2nm; Catalyst adopts the Fe catalyst film that 0.3-3nm is thick; Growth carbon-source gas is ethene or acetylene gas;
Carry out reaction growth with the material prepared, growth temperature 650-760 DEG C, grow obtain super in-line arrangement can spinning carbon nano pipe array, be highly 100-400 μm;
(2) dry spinning: growing to step (1) the super in-line arrangement obtained can carry out membrane by spinning carbon nano pipe array, prepares super in-line arrangement single-layer carbon nano-tube film; Super in-line arrangement can in spinning carbon nano pipe array carbon nano-tube end to end, form continuous film; Membrane speed is 0.5-1m/s;
(3) chip surface is stacking: the super in-line arrangement single-layer carbon nano-tube film prepared in objective chip surface stacking procedure (2), and the superposition number of plies is 1-50 layer, obtains product high-orientation carbon nanotube film fin.
3. the preparation method of high-orientation carbon nanotube film fin as claimed in claim 2, it is characterized in that: control every layer of upper and lower Direction of superposition of super in-line arrangement single-layer carbon nano-tube film by carbon nano-tube film orientation angle in upper and lower double-layer films in step (3), thus obtain high-orientation carbon nanotube film fin.
4. the preparation method of high-orientation carbon nanotube film fin as claimed in claim 2, it is characterized in that: the method dripping ethanol, acetone or ethylene glycol solution on the high-orientation carbon nanotube film fin that step (3) obtains improves the contact area between fin and chip further, improve radiating effect.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441105A (en) * | 2020-03-19 | 2020-07-24 | 华中科技大学 | Carbon nanotube fiber and preparation method thereof |
| CN113635620A (en) * | 2021-07-28 | 2021-11-12 | 深圳烯湾科技有限公司 | Multi-orientation carbon nanotube composite membrane and preparation method thereof |
-
2014
- 2014-12-17 CN CN201410788783.4A patent/CN104486934A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441105A (en) * | 2020-03-19 | 2020-07-24 | 华中科技大学 | Carbon nanotube fiber and preparation method thereof |
| CN113635620A (en) * | 2021-07-28 | 2021-11-12 | 深圳烯湾科技有限公司 | Multi-orientation carbon nanotube composite membrane and preparation method thereof |
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