CN104485389B - The solaode forming method of autoregistration selectivity diffusion - Google Patents
The solaode forming method of autoregistration selectivity diffusion Download PDFInfo
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- CN104485389B CN104485389B CN201410789712.6A CN201410789712A CN104485389B CN 104485389 B CN104485389 B CN 104485389B CN 201410789712 A CN201410789712 A CN 201410789712A CN 104485389 B CN104485389 B CN 104485389B
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- Prior art keywords
- autoregistration
- silicon substrate
- diffusion
- solaode
- selectivity
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000009792 diffusion process Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002002 slurry Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 235000008216 herbs Nutrition 0.000 claims abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000011574 phosphorus Substances 0.000 claims abstract description 8
- 210000002268 wool Anatomy 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 4
- 238000004528 spin coating Methods 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 6
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses the solaode forming method of a kind of autoregistration selectivity diffusion, the step of the method is as follows: (a) silicon substrate cleans, and removes damage layer, and in the front making herbs into wool of silicon substrate；B () uses atomic layer deposition method deposition aluminium sesquioxide layer again on the making herbs into wool face in silicon substrate front, the most again in the upper surface spin coating phosphorus source of aluminium sesquioxide layer；C silicon substrate after step (b) processes is placed in temperature environment deposition by () again, make aluminium sesquioxide layer producing bubbles inside, so that phosphorus source diffuses to form autoregistration selective emitter junction；D () washes away aluminium sesquioxide layer, place in temperature environment, makes autoregistration selective emitter junction advance；(e) Wafer Backside Cleaning to silicon substrate；F () is again at the upper surface depositing antireflection film of alignment selective emitter junction；G metallize respectively in () front and back；H () sinters and test after, obtain finished product.The present invention can reduce pyroprocess and alignment procedures and the preparation of special etching slurry accurately of selectivity diffusion battery, is greatly reduced production cost, is more suitable for industrialization large-scale production.
Description
Technical field
The present invention relates to the solaode forming method of a kind of autoregistration selectivity diffusion.
Background technology
At present, in order to improve the efficiency of solaode further and reduce cost, the most widely used selectivity diffusion (SE)
Preparing high-efficiency battery, routine has two kinds of methods and prepares: one is to utilize mask re-spread after elder generation gently expands, and forms selectivity and sends out
Penetrating knot, this method needs high accuracy alignment, and two is to utilize mask etching after re-diffusion, forms light diffusion region, and this method needs spy
Different cleaning equipment and relatively costly.Above two methods are required to special etching slurry, relatively costly, are unfavorable for extensive raw
Produce.
Summary of the invention
The technical problem to be solved is the defect overcoming prior art, it is provided that the diffusion of a kind of autoregistration selectivity
Solaode forming method, it can reduce pyroprocess and alignment procedures and the spy accurately of selectivity diffusion battery
The preparation of different etching slurry, is greatly reduced production cost, is more suitable for industrialization large-scale production.
In order to solve above-mentioned technical problem, the technical scheme is that the solar-electricity that a kind of autoregistration selectivity spreads
Pond forming method, the step of the method is as follows:
A () silicon substrate cleans, remove damage layer, and in the front making herbs into wool of silicon substrate；
B () uses atomic layer deposition method deposition aluminium sesquioxide layer again on the making herbs into wool face in silicon substrate front, exist the most again
The upper surface spin coating phosphorus source of aluminium sesquioxide layer；
C silicon substrate after step (b) processes is placed in temperature environment deposition by () again, make aluminium sesquioxide layer
Producing bubbles inside, so that phosphorus source diffuses to form autoregistration selective emitter junction, this autoregistration selective emitter junction is three
The bubble area of Al 2 O floor forms re-diffusion district, and non-bubble domain forms light diffusion region；
D () washes away aluminium sesquioxide layer, place in temperature environment, makes autoregistration selective emitter junction advance, reaches
Required junction depth and surface concentration；
(e) Wafer Backside Cleaning to silicon substrate；
F () is again at the upper surface depositing antireflection film of alignment selective emitter junction；
G metallize respectively in () front and back；
H () sinters and test after, obtain finished product.
Further, described silicon substrate is p-type pulling of silicon single crystal.
Further, the resistivity of described silicon substrate is 1-6 Ω cm.
Further, in described step (b), the thickness of aluminium sesquioxide layer is 7nm.
Further, in described step (c), the temperature value of temperature environment is 500 DEG C.
Further, in described step (d), the temperature value of temperature environment is 700 DEG C.
Further, in described step (g), front uses silver slurry to carry out metallization and forms front silver grid, the back side
Use aluminium paste to carry out metallization and form back surface field, then use silver slurry to form back silver grid in back surface field.
After have employed technique scheme, the present invention utilizes the Al that atomic film deposits2O3The character of layer itself forms autoregistration
Selective emitter junction, Al2O3Layer easily bubbles in temperature environment, it is not necessary to high accuracy alignment and special etching slurry,
Need not high temperature and form mask, more conducively industrialization large-scale production.
Accompanying drawing explanation
The battery structure that the solaode forming method of the autoregistration selectivity diffusion that Fig. 1 is the present invention is formed is signal
Figure.
Detailed description of the invention
It is clearly understood to make present disclosure be easier to, below according to specific embodiment and combine accompanying drawing, to this
Invention is described in further detail.
As it is shown in figure 1, the solaode forming method of a kind of autoregistration selectivity diffusion, the step of the method is as follows:
A () silicon substrate 1 cleans, remove damage layer, and in the positive flour base making herbs into wool of silicon substrate 1；
B () uses atomic layer deposition method deposition aluminium sesquioxide layer again on the making herbs into wool face in silicon substrate 1 front, the most again
Upper surface spin coating phosphorus source at aluminium sesquioxide layer；
C () puts the silicon substrate 1 after step (b) processes into boiler tube again, deposit, make three oxygen in temperature environment
Change two aluminium lamination producing bubbles inside, so that phosphorus source diffuses to form autoregistration selective emitter junction 2, this autoregistration selectivity
Emitter junction forms re-diffusion district 21 in the bubble area of aluminium sesquioxide floor, and non-bubble domain forms light diffusion region 22；
D () washes away aluminium sesquioxide layer, be again introduced into boiler tube, puts in temperature environment, makes autoregistration selectivity launch
Knot 2 propelling 30min, reaches required junction depth and surface concentration；
(e) Wafer Backside Cleaning to silicon substrate 1；
F () is again at the upper surface depositing antireflection film 3 of alignment selective emitter junction 2；
G metallize respectively in () front and back；
H () sinters and test after, obtain finished product.
Wherein, described silicon substrate is p-type pulling of silicon single crystal, and its resistivity is 3 Ω cm；Can certainly select
1 Ω cm or 6 Ω cm.
In described step (b), the thickness of aluminium sesquioxide layer is 7nm.
In described step (c), the temperature value of temperature environment is 500 DEG C.
In described step (d), the temperature value of temperature environment is 700 DEG C.
In described step (g), front uses silver slurry to carry out metallization and forms front silver grid 4, and the back side uses aluminium paste
Carry out metallization and form back surface field 5, then use silver slurry to form back silver grid 6 in back surface field.
The operation principle of the present invention is as follows:
The present invention utilizes the Al that atomic film deposits2O3The character of layer itself forms autoregistration selective emitter junction, Al2O3Layer
Temperature environment is easily bubbled, it is not necessary to high accuracy alignment and special etching slurry, it is not necessary to high temperature forms mask, more
It is beneficial to industrialization large-scale production.
Particular embodiments described above, to present invention solves the technical problem that, technical scheme and beneficial effect entered
One step describes in detail, be it should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to
The present invention, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, all should wrap
Within being contained in protection scope of the present invention.
Claims (7)
1. the solaode forming method of an autoregistration selectivity diffusion, it is characterised in that the step of the method is as follows:
A () silicon substrate cleans, remove damage layer, and in the front making herbs into wool of silicon substrate；
B () uses atomic layer deposition method deposition aluminium sesquioxide layer again on the making herbs into wool face in silicon substrate front, exist the most again
The upper surface spin coating phosphorus source of aluminium sesquioxide layer；
C silicon substrate after step (b) processes is placed in temperature environment by () again, make inside aluminium sesquioxide layer
Producing bubble, so that phosphorus source diffuses to form autoregistration selective emitter junction, this autoregistration selective emitter junction is in three oxidations
The bubble area of two aluminium laminations forms re-diffusion district, and non-bubble domain forms light diffusion region；
D () washes away aluminium sesquioxide layer, place in temperature environment, makes autoregistration selective emitter junction advance, reaches
Required junction depth and surface concentration；
(e) Wafer Backside Cleaning to silicon substrate；
F () is again at the upper surface depositing antireflection film of alignment selective emitter junction；
G metallize respectively in () front and back；
H () sinters and test after, obtain finished product.
The solaode forming method of autoregistration selectivity the most according to claim 1 diffusion, it is characterised in that:
Described silicon substrate is p-type pulling of silicon single crystal.
The solaode forming method of autoregistration selectivity the most according to claim 2 diffusion, it is characterised in that:
The resistivity of described silicon substrate is 1-6 Ω cm.
The solaode forming method of autoregistration selectivity the most according to claim 1 diffusion, it is characterised in that:
In described step (b), the thickness of aluminium sesquioxide layer is 7nm.
The solaode forming method of autoregistration selectivity the most according to claim 1 diffusion, it is characterised in that:
In described step (c), the temperature value of temperature environment is 500 DEG C.
The solaode forming method of autoregistration selectivity the most according to claim 1 diffusion, it is characterised in that:
In described step (d), the temperature value of temperature environment is 700 DEG C.
The solaode forming method of autoregistration selectivity the most according to claim 1 diffusion, it is characterised in that:
In described step (g), front uses silver slurry to carry out metallization and forms front silver grid, and the back side uses aluminium paste to carry out
Metallization forms back surface field, then uses silver slurry to form back silver grid in back surface field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410789712.6A CN104485389B (en) | 2014-12-17 | 2014-12-17 | The solaode forming method of autoregistration selectivity diffusion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410789712.6A CN104485389B (en) | 2014-12-17 | 2014-12-17 | The solaode forming method of autoregistration selectivity diffusion |
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| Publication Number | Publication Date |
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| CN104485389A CN104485389A (en) | 2015-04-01 |
| CN104485389B true CN104485389B (en) | 2016-09-28 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077357A (en) * | 2008-04-18 | 2011-05-25 | 1366科技公司 | Methods to pattern diffusion layers in solar cells and solar cells made by such methods |
| CN102420271A (en) * | 2005-12-21 | 2012-04-18 | 太阳能公司 | Back side contact solar cell structures and fabrication processes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026344A (en) * | 2011-07-19 | 2013-02-04 | Hitachi Chem Co Ltd | Manufacturing method of n-type diffusion layer, manufacturing method of solar cell element, and solar cell element |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420271A (en) * | 2005-12-21 | 2012-04-18 | 太阳能公司 | Back side contact solar cell structures and fabrication processes |
| CN102077357A (en) * | 2008-04-18 | 2011-05-25 | 1366科技公司 | Methods to pattern diffusion layers in solar cells and solar cells made by such methods |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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