CN104485274B - Electron collector implementing method - Google Patents
Electron collector implementing method Download PDFInfo
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- CN104485274B CN104485274B CN201410817594.5A CN201410817594A CN104485274B CN 104485274 B CN104485274 B CN 104485274B CN 201410817594 A CN201410817594 A CN 201410817594A CN 104485274 B CN104485274 B CN 104485274B
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- electron
- mobility
- region
- sector region
- collecting zone
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Abstract
The invention relates to an electron collector implementing method which is characterized by comprising steps as follows: 1), an electron collecting area is determined according to semiconductor material photon-generated carrier lifetime and diffusion distance; 2), three electron mobility values of the annular electro collecting area are set according to the optical transform principle and the collecting effect; 3), corresponding mobility distribution of a sector area A and a sector area B are obtained respectively according to radial electron mobility mu r and annular electron mobility mu theta of the set annular electro collecting area; 4), dose distribution of doped impurities of corresponding areas is obtained according to the calculated electron mobility distribution of the sector area A and the sector area B and the relation between the electron mobility and semiconductor doped impurities; 5), dose distribution of doped impurities in an area C is calculated according to electron mobility mu 0 of the periphery of the annular electron collecting area; 6), a mask plate is manufactured according to the size of the annular electro collecting area and dose distribution of the doped impurities of the sector area A , the sector area B and the area C; and 7), corresponding dosages of doped impurities are implanted to the mask plate manufactured in an ion implantation manner, and an electron collector is manufactured.
Description
Technical field
The present invention relates to Meta Materials and technical field of semiconductors, especially with regard to a kind of electron collector implementation method.
Background technology
Stealth technology can make electromagnetic wave bypass object and not make external electromagnetic waves that any distortion occurs.In theory, lead to
Cross coordinate transformating technology, people optionally can be manipulated to electromagnetic wave.The stealthy device being designed based on transform optics
Theoretical and experiment confirms to cause great sensation in scientific circles.Hereafter, substantial amounts of researchers put into transform optics one after another
In research.In recent years, researchers are even more and the theory of transform optics are extended in other kymatologies, such as sound wave, matter wave,
Elastic wave etc..Just nearest, people attempt this technology is introduced in static field it is achieved that to current field, magnetostatic field and thermal field
Manipulate.
Always well known, material diffusion equation and current field, magnetostatic field, thermal field has identical form, therefore transform optics skill
Art can also be introduced in material diffusion, realizes the control to material diffusion.Likewise, by certain conversion, it is possible to achieve thing
Stealthy, the collection of matter diffusion.In semiconductor technology, realization has to the control particularly separation to electronics and hole of electronics
Great meaning.Traditionally, people be implemented in combination with by P-type semiconductor and N-type semiconductor known to PN junction, this PN junction can produce
Raw built in field, so that the electronics of photo-generated carrier separates with hole, finally converts the light to electricity, but not all half
Conductor material can make p-type and N-type.Therefore, it can this technology is introduced in the control to electronics, by designing electrons spread
Collection reach the detached effect in electronics and hole, finally realize a novel electron hole being different from traditional PN junction and control
Device.
Content of the invention
For the problems referred to above, it is an object of the invention to provide a kind of electron collector that can realize on any semiconductor
Implementation method.
For achieving the above object, the present invention takes technical scheme below：A kind of electron collector implementation method, its feature exists
In inclusion herein below：1) according to semi-conducting material photo-generated carrier life-span and diffusion length, determine electron collection area domain, specifically
Process is：1.1) adopt semi-conducting material manufacturing one substrate, according to semi-conducting material photo-generated carrier life-span and diffusion length,
One circulating electron collecting zone is arranged on substrate, and circulating electron collecting zone interval is divided into some sector regions；1.2)
All sector regions are respectively defined as A sector region and B sector region distributes alternately, the area beyond circulating electron collecting zone
Domain is defined as C region；2) according to collecting effect, three electron mobility values of ring, wherein, three are set using optical transform principle
Electron mobility values are respectively electron mobility μ around circulating electron collecting zone0, the radial direction electricity of circulating electron collecting zone
Transport factor μrFor and circulating electron collecting zone ring electron mobility μθ；3) according to the circulating electron collecting region setting
Radial direction electron mobility u in domainrWith ring electron mobility uθRespectively obtain the migration corresponding to A sector region and B sector region
Rate is distributed；4) electron mobility according to calculated A sector region and B sector region is distributed, and according to electron mobility
With the relation of semiconductor doping impurity, obtain the A sector region of circulating electron collecting zone and the impurity of B sector region
Dosage is distributed；5) according to electron mobility μ around circulating electron collecting zone0, lead by semiconductor mobility size and partly
The relation of the size of body impurity, is calculated the dosage distribution of the impurity in C region；6) according to circulating electron collecting region
The dosage distribution of the impurity of the size in domain and A sector region, B sector region and C region, makes mask plate；7) utilize
Ion implanting mode injects the impurity of corresponding dosage on the mask plate making, that is, make and obtain an electron collector.
Described step 2) three electron mobility values meet following relation：
μrμθ=μ0 2And μr>μθ.
Described step 3) in A sector region and mobility distribution μ corresponding to B sector regionAAnd μBFor：
In formula, fAIt is the volume ratio that whole A sector region accounts for circulating electron collecting zone, fBIt is that whole B sector region accounts for ring
The volume ratio in shape electron collection area domain.
One of described choice of the substrates silicon, germanium, GaAs and carborundum.
Described impurity adopts one of phosphorus, arsenic or antimony.
Due to taking above technical scheme, it has advantages below to the present invention：Due to not every semi-conducting material all
P-type and N-type can be made, therefore the present invention has more universality compared with traditional PN junction, can realize on any semiconductor, separately
Outward, the present invention is easily realized using modern semiconductor technology.The present invention is to be different from the novel electron hole separator of PN junction
Part, can be widely used in the fields such as opto-electronic conversion, solar cell.
Brief description
Fig. 1 is the space coordinate transformation schematic diagram of the present invention；
Fig. 2 is electron collector schematic diagram in the embodiment of the present invention 1, and wherein, figure (a) is the distribution of circulating electron collecting zone
Schematic diagram,Represent A sector region,Represent B sector region,Represent C region；Figure (b) is that electronics is dense
Degree schematic diagram；
Fig. 3 is electron collector schematic diagram in the embodiment of the present invention 2, and wherein, figure (a) is the distribution of circulating electron collecting zone
Schematic diagram,Represent A sector region,Represent B sector region,Represent C region；Figure (b) is that electronics is dense
Degree schematic diagram.
Specific embodiment
To carry out detailed description to the present invention below in conjunction with accompanying drawing.It should be appreciated, however, that being provided only more of accompanying drawing
Understand the present invention well, they should not be interpreted as limitation of the present invention.
For semi-conducting material, according to Einstein relation, the diffusion coefficient of electronics is proportional to mobility：
In formula, D is diffusion coefficient, and q is electronic charge, uqIt is electron mobility, kBIt is Boltzmann constant, T is absolute
Temperature.
The electron hole mobility distribution that the present invention passes through according to optical transform principle in design space realizes electronics is existed
Specific region is collected.The general principle of optical transform can be summarized as：Coordinate transform does not change the form of Maxwell equation, only
Change basic parameter therein and field value.By optical transform principle, it is possible to achieve the manipulation to physical field；It is known that thing
The diffusion of matter can be described with Fick's law, then the general principle of optical transform can be introduced diffusion field, realize to expansion
Scattered control.
For static Fick's law, its diffusion equation can be expressed as：
(D C)=0
In transformation space, then can be expressed as：
Wherein,
In formula, C is concentration, and D is diffusion coefficient, and A is Jacobi's transformation matrix, and x, y, z are original coordinates, and x', y', z' are
Coordinate transforming.
As shown in Figure 1 it is assumed that a two-dimensional case, to radius, the concentric circles for a compresses the circle for b for the radius, radius simultaneously
Concentric circles for c is diluted, then coordinate transform can be expressed as：
In formula, k1=b/a, k2=(c-a)/(c-b), k3=(b-a)/(c-b) is the coefficient under cylindrical coordinates.D0For background
Diffusion coefficient, DrFor the diffusion coefficient of radial direction, φ, z are respectively original coordinates, and φ ', z' are respectively the coordinate after converting.
Collecting material device is divided into three regions：Central area is r '≤a, and material concentration enhances k1Times；In intermediate layer
(a≤r '≤b), material concentration is concentrated to central area；At outer layer (b≤r '≤c), material concentration dilutes k2Times.Therefore very
It is readily derived, for a collecting material device, the distribution of its diffusion coefficient can be expressed as：
Dθ=Dr=D0=1c≤r, 0≤r≤a
In formula, DθDiffusion coefficient for ring.
By formula (3) as can be seen that it is graded that a collecting material device needs ring and radial diffusion coefficient
Anisotropic elastic solid.Obviously, realize such gradient, anisotropic diffusion coefficient extremely difficult, be highly detrimental in reality
Realize in border.But found by research, the product of ring and radial diffusion coefficient is background diffusion coefficient square it is assumed that ring
Be d to diffusion coefficient value, then the diffusion coefficient value of radial direction be 1/d, when assume ring diffusion coefficient be a constant rather than
One gradient function, then the diffusion coefficient of radial direction is also a constant.But found by research, as long as diffusion coefficient meets
Dθ·Dr=D0 2, and Dθ＜ Dr, such as set the diffusion coefficient D of ringθFor d, then the diffusion coefficient of radial direction can be obtained
For 1/d.Because the mobility of electron hole in a semiconductor material is proportional to diffusion coefficient it is assumed that the electronics of ring and radial direction
Mobility is respectively μθAnd μr, Electronic mobility is μθ, then the electron mobility of collector needs to meet μrμθ=μ0 2And
μr>μθ.
The electron collector implementation method of the present invention, including herein below：
1st, according to semi-conducting material photo-generated carrier life-span and diffusion length, determine electron collection area domain, detailed process is：
1.1) adopt semi-conducting material manufacturing one substrate, according to semi-conducting material photo-generated carrier life-span and diffusion length,
One circulating electron collecting zone is arranged on substrate, and circulating electron collecting zone interval is divided into some sector regions；Its
In, the material of substrate can select one of silicon, germanium, GaAs and carborundum.
1.2) all sector regions are respectively defined as A sector region and B sector region distributes alternately, and by circulating electron
Region beyond collecting zone is defined as C region；As shown in Fig. 2 black region is A sector region, white portion is B fan
Shape region, gray area is C region.
2nd, according to collecting effect, three electron mobility values, wherein, three electron transfers are set using optical transform principle
Rate value needs to meet：
μrμθ=μ0 2And μr>μθ
In formula, μ0For the electron mobility of (background) around circulating electron collecting zone, μrFor circulating electron collecting zone
Radial direction electron mobility, μθRing electron mobility for circulating electron collecting zone.Assume to select μr=4 μ0, μθ=1/4 μ0Then
Collecting effect can be realized.
The collecting effect of the circulating electron collecting zone in the embodiment of the present invention can be entered using finite element software comsol
Row simulation, evaluates designed circulating electron collecting zone effect, selects the diffusion model in comsol first, according to design
Require to set the diffusion coefficient distribution of circulating electron collecting zone and background, observe diffusion flux distribution map after simulation, by seeing
Examine the flux magnitude at the circulating electron collecting zone center collecting effect to pass judgment on circulating electron collecting zone.
3rd, radial migration rate u according to the circulating electron collecting zone settingrWith ring mobility uθRespectively obtain A fan-shaped
Region and the mobility distribution of B sector region.
In order to realize anisotropic ring and the distribution of radial migration rate, the mobility of A sector region and B sector region is divided
Cloth μAAnd μBCan be expressed as：
In formula, fAIt is the volume ratio that whole A sector region accounts for circulating electron collecting zone, fBIt is that whole B sector region accounts for ring
The volume ratio in shape electron collection area domain.
4th, the electron mobility according to calculated A sector region and B sector region is distributed, and according to electron mobility
With the relation of semiconductor doping impurity, obtain the A sector region of circulating electron collecting zone and the impurity of B sector region
Dosage is distributed, and wherein, impurity can be using one of phosphorus, arsenic or antimony.
5th, according to electron mobility μ around circulating electron collecting zone0, lead by the mobility size of semiconductor and partly
The relation of body impurity, is calculated the dosage distribution of the impurity in C region.
6th, the impurity of the size according to circulating electron collecting zone and A sector region, B sector region and C region
Dosage distribution, make mask plate.
7th, utilize ion implanting mode that the impurity of corresponding dosage is injected on the mask plate making, that is, make and obtain one
Electron collector.
Below by specific embodiment, the electron collector implementation method of the present invention is described in detail：
Embodiment one：As shown in Fig. 2 (a), with intrinsic silicon as substrate, will be former for the phosphorus of various dose using ion injection method
Son injection substrate, realizes predetermined electron mobility distribution in zones of different, and the process of implementing is：
1st, the internal diameter of setting circulating electron collecting zone and external diameter are respectively 30um and 100um, and A sector region and B are fan-shaped
The angle of the central angle in region is respectively 20 ° and 10 °；
2nd, simulate the background migration rate setting as 500cm2/ V s, radial direction electron mobility is 1000cm2/ V s, ring
Electron mobility is 250cm2/V·s；
3rd, 240cm is respectively according to the mobility of the mobility and B sector region that are calculated A sector region2/ V s and
1200cm2The mobility in/V s, C region is 500cm2/V·s；
4th, consult related semiconductor data can obtain, need the phosphorus atoms dosage of doping to be respectively the doping of A sector region
Dosage is 6 × 1018cm-3, the dopant dose in C region is 1017cm-3, B sector region is intrinsic silicon；
5th, the dosage distribution of the impurity in the size according to circulating electron collecting zone and A sector region and C region, system
Make mask plate；
6th, utilize the mask plate that ion implanting mode passes through to make that the impurity of corresponding dosage is injected on intrinsic silicon, first
First intrinsic silicon is carried out, then exposes A sector region with photoetching, inject corresponding dosage in A sector region；Use photoetching again
Expose C region, inject corresponding dosage in C region, that is, make and obtain an electron collector.
It can be seen that this electron collector achieves collecting effect as shown in Fig. 2 (b), the electronics in electron collector is dense
Degree is more than outside concentration.
Embodiment two：With intrinsic silicon as substrate, using ion injection method, the phosphorus atoms of various dose are injected substrate,
Zones of different realizes predetermined electron mobility distribution, and the process of implementing is：
1st, the internal diameter of setting circulating electron collecting zone and external diameter are respectively 30um and 100um, and A sector region and B are fan-shaped
The angle of the central angle in region is 10 °；
2nd, simulate the background migration rate setting as 300cm2/ V s, radial direction electron mobility is 1200cm2/ V s, ring
Electron mobility is 80cm2/V·s；
3rd, basis is calculated A sector region and the electron mobility of B sector region is respectively 90cm2/ V s and
1200cm2The electron mobility in/V s, C region is 500cm2/V·s；
4th, consult related semiconductor data can obtain, need the phosphorus atoms dosage of doping to be respectively mixing of A sector region
Miscellaneous dosage is 5 × 1020cm-3, the dopant dose 10 in C region17cm-3, B sector region is intrinsic silicon；
5th, the dosage distribution of the impurity in the size according to circulating electron collecting zone and A sector region and C region, system
Make mask plate；
6th, utilize the mask plate that ion implanting mode passes through to make that the impurity of corresponding dosage is injected on intrinsic silicon, first
First intrinsic silicon is carried out, then exposes A sector region with photoetching, inject corresponding dosage in A sector region.Revealed with photoetching
Go out C region, inject corresponding dosage in C region, that is, make and obtain an electron collector.
It can be seen that this electron collector achieves collecting effect as shown in Fig. 3 (b), the electronics in electron collector is dense
Degree is more than outside concentration.
The various embodiments described above are merely to illustrate the present invention, and wherein each implementation steps of method etc. are all to be varied from
, every equivalents carrying out on the basis of technical solution of the present invention and improvement, all should not exclude the protection in the present invention
Outside scope.
Claims (5)
1. a kind of electron collector implementation method is it is characterised in that include herein below：
1) according to semi-conducting material photo-generated carrier life-span and diffusion length, determine electron collection area domain, detailed process is：
1.1) adopt semi-conducting material manufacturing one substrate, according to semi-conducting material photo-generated carrier life-span and diffusion length, in base
One circulating electron collecting zone is arranged on bottom, and circulating electron collecting zone interval is divided into some sector regions；
1.2) all sector regions are respectively defined as A sector region and B sector region distributes alternately, circulating electron collecting zone
Region in addition is defined as C region；
2) according to collecting effect, three electron mobility values of ring, wherein, three electron mobilities are set using optical transform principle
Value is respectively electron mobility μ around circulating electron collecting zone0, radial direction electron mobility μ of circulating electron collecting zoner
For and circulating electron collecting zone ring electron mobility μθ；
3) radial direction electron mobility μ according to the circulating electron collecting zone settingrWith ring electron mobility μθRespectively obtain A
Mobility distribution corresponding to sector region and B sector region；
4) electron mobility according to calculated A sector region and B sector region is distributed, and according to electron mobility and half
The relation of conductor impurity, obtains the A sector region of circulating electron collecting zone and the dosage of the impurity of B sector region
Distribution；
5) according to electron mobility μ around circulating electron collecting zone0, by semiconductor mobility size and semiconductor doping
The relation of the size of impurity, is calculated the dosage distribution of the impurity in C region；
6) agent of the impurity of the size according to circulating electron collecting zone and A sector region, B sector region and C region
Amount distribution, makes mask plate；
7) utilize ion implanting mode that the impurity of corresponding dosage is injected on the mask plate making, that is, make and obtain an electronics
Collector.
2. as claimed in claim 1 a kind of electron collector implementation method it is characterised in that：Described step 2) three electronics move
Shifting rate value meets following relation：
μrμθ=μ0 2And μr>μθ.
3. a kind of electron collector implementation method as described in any one of claim 1～2 it is characterised in that：Described step 3)
In A sector region and mobility distribution μ corresponding to B sector regionAAnd μBFor：
In formula, fAIt is the volume ratio that whole A sector region accounts for circulating electron collecting zone, fBIt is that whole B sector region accounts for annular electro
The volume ratio of sub- collecting zone.
4. a kind of electron collector implementation method as described in any one of claim 1～2 it is characterised in that：Described substrate choosing
Select one of silicon, germanium, GaAs and carborundum.
5. a kind of electron collector implementation method as described in any one of claim 1～2 it is characterised in that：Described doping is miscellaneous
Matter adopts one of phosphorus, arsenic or antimony.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3913063A1 (en) * | 1989-04-21 | 1990-10-25 | Licentia Gmbh | Buckets for travelling-wave tubes - with power supplied by metallised coatings on walls of bores |
| CN1599944A (en) * | 2001-12-04 | 2005-03-23 | E2V技术有限公司 | Electron collector |
| CN102163007A (en) * | 2011-05-13 | 2011-08-24 | 上海集成电路研发中心有限公司 | Lithography machine imaging system for improving resolution by using photoelectric effect and imaging method thereof |
-
2014
- 2014-12-24 CN CN201410817594.5A patent/CN104485274B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3913063A1 (en) * | 1989-04-21 | 1990-10-25 | Licentia Gmbh | Buckets for travelling-wave tubes - with power supplied by metallised coatings on walls of bores |
| CN1599944A (en) * | 2001-12-04 | 2005-03-23 | E2V技术有限公司 | Electron collector |
| CN102163007A (en) * | 2011-05-13 | 2011-08-24 | 上海集成电路研发中心有限公司 | Lithography machine imaging system for improving resolution by using photoelectric effect and imaging method thereof |
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