CN104483764A - Defective magneto photon crystal with non-reciprocity feature and purpose - Google Patents
Defective magneto photon crystal with non-reciprocity feature and purpose Download PDFInfo
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- CN104483764A CN104483764A CN201410633382.1A CN201410633382A CN104483764A CN 104483764 A CN104483764 A CN 104483764A CN 201410633382 A CN201410633382 A CN 201410633382A CN 104483764 A CN104483764 A CN 104483764A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
- G02F1/0955—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure used as non-reciprocal devices, e.g. optical isolators, circulators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0036—Magneto-optical materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/32—Photonic crystals
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a defective magneto photon crystal with a non-reciprocity feature and a purpose. The defective magneto photon crystal with the non-reciprocity feature comprises a one-dimensional magneto photon crystal and a magneto-optic material defect layer, the one-dimensional photon crystal is composed of magneto-optic material A and isotropic medium material B in an alternation mode, and the magneto-optic material C located at the middle of the structure is a magneto-optic material defect layer. The structure of the defective magneto photon crystal with the non-reciprocity feature is [A/B]m[C][A/B]mA, wherein the dielectric tensor of the magneto-optic medium is epsilon a, FORMULAE (as shown in the description), the thickness da is equal to 69.3 nanometers, the dielectric constant of the medium layer B is epsilon b=4, db is equal to 152.8 nanometers, the lattice period is d=da+db=222.1 nanometers, the dielectric tensor of the defect layer C is epsilon c, FORMULAE (as shown in the description), wherein m is the periodicity of the photon crystal, and m is equal to 13. The defective magneto photon crystal with the non-reciprocity feature is featured with simple structure, easiness in technique, strong functionality and the like, the design is flexible, and the application prospect is broad in opto-isolators, optical circulators and the like aspects.
Description
Technical field
The present invention relates to photon crystal device and magneto-optic technical field, particularly a kind of defect magnetic photonic crystal based on magnetic photonic crystal characteristics of non-reciprocity structure and purposes.
Background technology
Nonreciprocity refers to that electromagnetic wave can present the characteristics such as different electromagnetic consumables, phase shift along contrary both direction transmission in object.It has a wide range of applications in isolator and circulator.The conventional method realizing these devices is the nonreciprocal effect by means of magneto-optic memory technique, allows the pattern of light wave between fl transmission and reverse transfers, produce a phase deviation, has avoided the reversibility of light path.Traditional nonreciprocity is mainly based on the block structure of magneto-optic memory technique, and device volume and weight are large, poor stability and the not easily shortcoming such as integrated with other device, can not adapt to the needs of present information optronics technique development.In recent years, large quantity research shows that magnetic photonic crystal has broad application prospects, and particularly in optical communication field, utilizes magnetic photonic crystal can develop multiple optic communication device.Magnetic photonic crystal is realize miniaturization, be easy to integrated nonreciprocal device and provide a brand-new thinking and countermeasure.
Non-reciprocal device is one of primary element of photon technology, have a wide range of applications in optical communication and optical information processing, the nonreciprocal device (CN101067673A) based on magneto-optic resonance chamber proposes a kind of isolator of the micro-resonance structure of optics containing magneto-optic memory technique.But need the optical coupling structure by side, carry out coupling power formation with the input port at optical coupling structure two ends and output port, optical coupled has energy loss, can not realize total transmissivity.Because 1-D photon crystal structure is simple, good reliability, easily prepares, be convenient to the advantages such as integrated, therefore utilize 1-D photon crystal to realize the concern process of light signal more and more being caused to people.According to the characteristic of photonic crystal, electromagnetic wave this have and propagate in the material of periodic structure time can be subject to being made up of dielectric the modulation of cycle potential field, thus form the photonic band gap (photonic band) being similar to semiconductor energy band structure, band gap may be there is between photonic band gap, i.e. photon band gap (be called for short PBG), frequency drop on light in band gap not by.In complete photonic crystal, introduce defect, in forbidden photon band, there will be Defect Modes, can narrow-band filtering be realized.Utilize and reach the symmetrical and space symmetr of time to rupture inverting containing the one-dimensional magnetic photonic crystal of magneto-optic memory technique defect sturcture and can realize the electromagnetic nonreciprocity propagation of ultra-narrow band.
Summary of the invention
The technical matters that the present invention mainly solves is the setting of model parameter and the nonreciprocity of Electromagnetic Wave Propagation, provides a kind of defect magnetic photonic crystal and the purposes with nonreciprocity characteristic.
Technical scheme of the present invention is: a kind of defect magnetic photonic crystal with nonreciprocity characteristic, comprise one-dimensional magnetic photonic crystal and magneto-optic memory technique defect layer, its structure is [A/B]
mc [A/B]
ma, 1-D photon crystal is alternately made up of magneto-optic memory technique A and isotropic medium material B, and the magneto-optic memory technique C being positioned at structure centre position is magneto-optic memory technique defect layer.By the design of defect sturcture, make the electromagnetic wave inputting characteristic frequency realize one-way transmission, i.e. forward transmission oppositely cut-off, can realize the function of optoisolator effectively.
Further, the dielectric tensors of the film system periodicity m=13 of described crystal, magneto-optic memory technique A are ε
a, xx=ε
a, yy=ε
a, zz=1.96, ε
a, xz=-ε
a, zx=i0.4, ε
a, xy=ε
a, yx=ε
a, yz=ε
a, zy=0, thickness d
a=69.3nm, the specific inductive capacity of isotropic medium material B is ε
b=4, thickness d
b=152.8nm, lattice period is d=d
a+ d
bthe dielectric tensors dielectric tensors of=222.1nm, magneto-optic memory technique defect layer C are ε
c, xx=ε
c, yy=ε
a, zz=1.96, ε
c, xz=-ε
c, zx=-i0.4, ε
c, xy=ε
c, yx=ε
c, yz=ε
c, zy=0, thickness d
c=150nm, background material is air.The present invention is by changing the attribute of defect layer, and can carry out nonreciprocal propagation to other light-wave band, have good plasticity, the present invention not only can realize the nonreciprocal propagation of light wave, but also has filtering characteristic.
Further, described magneto-optic memory technique defect layer institute's externally-applied magnetic field direction is contrary with the externally-applied magnetic field direction of one-dimensional magnetic photonic crystal magneto-optic memory technique.
Further, the operating wavelength range of described crystal changes with the change of the thickness of defect layer.
Further, described crystal can make certain wavelength light beam from energy total transmissivity during the oblique incidence at a certain angle of defect one-dimensional magnetic photonic crystal side, is then totally reflected from the reverse oblique incidence of opposite side.
Have a purposes for nonreciprocity characteristic defective magnetic photonic crystal, described crystal can be used for designing nonreciprocity optic communication device.
The relatively similar existing research of the present invention, has following technique effect:
(1) the present invention not only can realize the nonreciprocal propagation of light wave, but also has filtering characteristic;
(2) the present invention has good plasticity.By changing the attribute of defect layer, nonreciprocal propagation can be carried out to other light-wave band, there is good plasticity;
(3) the present invention can be integrated with other device, adopts thin film preparation process, and technology of preparing is ripe;
(4) the present invention has very high light isolation.
Accompanying drawing explanation
Fig. 1 provides the nonreciprocity structural representation of defect one-dimensional magnetic photonic crystal;
The thickness that Fig. 2 gives magneto-optic defect layer C is d
c=140nm, forward entrance and oppositely incident transmission spectrum;
The thickness that Fig. 3 gives magneto-optic defect layer C is d
c=150nm, forward entrance and oppositely incident transmission spectrum;
The thickness that Fig. 4 gives magneto-optic defect layer C is d
c=160nm, forward entrance and oppositely incident transmission spectrum;
Magnetic field intensity H in one-dimensional magnetic photonic crystal when Fig. 5 is light wave forward entrance
yfield pattern;
Fig. 6 be light wave oppositely incident time one-dimensional magnetic photonic crystal in magnetic field intensity H
yfield pattern.
Embodiment
The specific embodiment of the present invention is illustrated further below in conjunction with accompanying drawing.
The present invention, comprises 1-D photon crystal and defect layer formation that periodicity is 26.Wherein, 1-D photon crystal is alternately made up of magneto-optic memory technique and isotropic material, and defect layer adopts certain thickness magneto-optic material layer, and defect layer is positioned at the particular model at total center.The present invention forms One-Dimensional Photonic Crystal Defect layer by magneto-optic memory technique, simultaneously certain wavelengths of electromagnetic incides 1-D photon crystal side at a certain angle and exports in another one side, the electromagnetic wave of same wavelength is then cut off completely from the reverse incidence in another side, realizes the performance that nonreciprocity is propagated.
As shown in Figure 1, modeling is carried out to 1-D photon crystal, model parameter is set.Be embodied as: defect layer structure is set in complete one-dimensional magnetic photonic crystal and forms defect one-dimensional magnetic photonic crystal, design a kind of new one-dimensional magnetic photonic crystal nonreciprocity structure.The dielectric tensors arranging magnet-optical medium A are ε
a, xx=ε
a, yy=ε
a, zz=1.96, ε
a, xz=-ε
a, zx=i0.4, ε
a, yy=ε
a, yx=ε
a, yz=ε
a, yy=0, thickness d
athe specific inductive capacity of=69.3nm, dielectric layer B is ε
b=4, d
b=152.8nm, lattice period is d=d
a+ d
bthe dielectric tensors dielectric tensors of=222.1nm, defect layer C are ε
c, xx=ε
c, yy=ε
a, zz=1.96, ε
c, xz=-ε
c, zx=-i0.4, ε
c, xy=ε
c, yx=ε
c, yz=ε
c, zy=0, d
c=150nm, background material is air.
Defect layer adopts the material identical with photonic crystal magneto-optic memory technique, but just contrary with the externally-applied magnetic field direction being applied to magnetic photonic crystal, total Time-reversal symmetry can not be met, thus realize structure nonreciprocity effect.
The present invention, in model emulation process, adopts eigen matrix, and under certain tangential wave vector component, the electromagnetic wave spectrum of input certain frequency scope, occurs Defect Modes in forbidden photon band.As in Figure 2-4.Study the thickness of different defect layer C to the impact on forward entrance and reverse incident transmission spectrum, solid line represents forward entrance transmission spectrum, the reverse incident transmission spectrum of represented by dotted arrows.As in Figure 2-4, Fig. 2 is the thickness d of defect layer to its transmission spectrum characteristic
c=140nm, forward entrance and oppositely incident transmission spectrum, the transmission peak wavelength of forward entrance (solid line represents) and oppositely incident (dotted line represents) is respectively 775.9nm and 768.3nm.Fig. 3 is the thickness d of defect layer
c=150nm, forward entrance and oppositely incident transmission spectrum, the wavelength of forward entrance (solid line represents) and oppositely incident (dotted line represents) is respectively 781nm and 773.4nm.Fig. 4 is the thickness d of defect layer
c=160nm, forward entrance and oppositely incident transmission spectrum, the wavelength of forward entrance (solid line represents) and oppositely incident (dotted line represents) is respectively 786.5nm and 778.7nm.Experimental result shows, the wavelength of the Defect Modes that different directions incidence occurs is different, and the operating wavelength range of this crystal changes with the change of the thickness of defect layer.Fig. 5 is when employing Finite element arithmetic wavelength is 781nm, the light wave forward entrance defect layer C thickness of incident angle 22.3 degree is the One-dimensional magneto-photonic crystal of 150nm, magnetic field intensity H
yfield pattern; Fig. 6 is when employing Finite element arithmetic wavelength is 781nm, the thickness of the reverse incident defect layer C of the light wave of incident angle 22.3 degree is the one-dimensional magnetic photonic crystal of 150nm, magnetic field intensity H
yfield pattern.Experimental result shows, crystal can make certain wavelength light beam from energy total transmissivity during the oblique incidence at a certain angle of defect one-dimensional magnetic photonic crystal side, and be then totally reflected from the reverse oblique incidence of opposite side, this kind of characteristic can be used for designing nonreciprocity optic communication device.For this reason, the present invention not only can realize the nonreciprocal propagation of light wave, but also has filtering characteristic; The present invention, by changing the attribute of defect layer, can carry out nonreciprocal propagation to other light-wave band, have good plasticity; The present invention can be integrated with other device, adopts thin film preparation process, and technology of preparing is ripe; The present invention has very high light isolation.
It is popular that the present invention has structure, and technique is simple, and the functional feature such as by force, flexible design, has wide practical use in optoisolator, optical circulator etc.
Above-mentioned embodiment is used for explaining and the present invention is described, instead of limits the invention, and in the protection domain of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention.
Claims (6)
1. have a defect magnetic photonic crystal for nonreciprocity characteristic, it is characterized in that, comprise one-dimensional magnetic photonic crystal and magneto-optic memory technique defect layer, this crystal structure is [A/B]
mc [A/B]
ma, described 1-D photon crystal is alternately made up of magneto-optic memory technique A and isotropic medium material B, and the described magneto-optic memory technique C being positioned at structure centre position is magneto-optic memory technique defect layer.
2. the defect magnetic photonic crystal with nonreciprocity characteristic according to claim 1, is characterized in that:
The dielectric tensors of the film system periodicity m=13 of described crystal, described magneto-optic memory technique A are ε
a, xx=ε
a, yy=ε
a, zz=1.96, ε
a, xz=-ε
a, zx=i0.4, ε
a, xy=ε
a, yx=ε
a, yz=ε
a, zy=0, thickness d
a=69.3nm;
The specific inductive capacity of described isotropic medium material B is ε
b=4, thickness d
b=152.8nm, lattice period is d=d
a+ d
b=222.1nm;
The dielectric tensors of described magneto-optic memory technique defect layer C are ε
c, xx=ε
c, yy=ε
a, zz=1.96, ε
c, xz=-ε
c, zx=-i0.4, ε
c, xy=ε
c, yx=ε
c, yz=ε
c, zy=0, thickness d
c=150nm, background material is air.
3. the defect magnetic photonic crystal with nonreciprocity characteristic according to claim 1, is characterized in that, described magneto-optic memory technique defect layer institute's externally-applied magnetic field direction is contrary with one-dimensional magnetic photonic crystal magneto-optic memory technique externally-applied magnetic field direction.
4. the defect magnetic photonic crystal with nonreciprocity characteristic according to claim 1, it is characterized in that, the operating wavelength range of described crystal changes with the change of the thickness of defect layer.
5. the defect magnetic photonic crystal with nonreciprocity characteristic according to claim 1, it is characterized in that, described crystal can make certain wavelength light beam from energy total transmissivity during the oblique incidence at a certain angle of defect one-dimensional magnetic photonic crystal side, is then totally reflected from the reverse oblique incidence of opposite side.
6. one kind has the purposes of defect magnetic photonic crystal as design nonreciprocity optic communication device of nonreciprocity characteristic as claimed in claim 1.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093571A (en) * | 2015-07-31 | 2015-11-25 | 南京邮电大学 | Large-incident-angle magnetic photonic crystal broadband photoisolator |
| CN105739135A (en) * | 2016-03-25 | 2016-07-06 | 南京邮电大学 | Magneto-optic isolator prepared from metamaterial with low dielectric constant |
| CN108538933A (en) * | 2018-05-11 | 2018-09-14 | 南京工业大学 | Magneto-optical material microstructure photovoltaic radiator with nonreciprocity |
| CN108649304A (en) * | 2018-07-03 | 2018-10-12 | 南京林业大学 | A kind of electromagnetic wave isolator based on magnet-optical medium |
| CN111580198A (en) * | 2020-05-22 | 2020-08-25 | 中国科学院上海技术物理研究所 | Ultra-wide cut-off narrow band-pass filter based on Tamm state induction |
| CN113625478A (en) * | 2021-09-14 | 2021-11-09 | 青岛大学 | Magneto-optical modulator |
| CN113784491A (en) * | 2021-09-22 | 2021-12-10 | 南京信息工程大学 | Plasma electromagnetic parameter measuring method based on defect microwave photonic crystal |
| CN113917715A (en) * | 2021-09-07 | 2022-01-11 | 安徽工程大学 | Non-reciprocal heat radiator based on magneto-optical crystal heterostructure |
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| CN103472598A (en) * | 2013-10-12 | 2013-12-25 | 太原理工大学 | One-dimensional magnetic photonic crystal for implementing optical isolation |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093571A (en) * | 2015-07-31 | 2015-11-25 | 南京邮电大学 | Large-incident-angle magnetic photonic crystal broadband photoisolator |
| CN105739135A (en) * | 2016-03-25 | 2016-07-06 | 南京邮电大学 | Magneto-optic isolator prepared from metamaterial with low dielectric constant |
| CN105739135B (en) * | 2016-03-25 | 2018-04-10 | 南京邮电大学 | The magneto optic isolator prepared using low-k Meta Materials |
| CN108538933A (en) * | 2018-05-11 | 2018-09-14 | 南京工业大学 | Magneto-optical material microstructure photovoltaic radiator with nonreciprocity |
| CN108649304A (en) * | 2018-07-03 | 2018-10-12 | 南京林业大学 | A kind of electromagnetic wave isolator based on magnet-optical medium |
| CN108649304B (en) * | 2018-07-03 | 2024-05-10 | 南京林业大学 | Electromagnetic wave isolator based on magneto-optical medium |
| CN111580198A (en) * | 2020-05-22 | 2020-08-25 | 中国科学院上海技术物理研究所 | Ultra-wide cut-off narrow band-pass filter based on Tamm state induction |
| CN113917715A (en) * | 2021-09-07 | 2022-01-11 | 安徽工程大学 | Non-reciprocal heat radiator based on magneto-optical crystal heterostructure |
| CN113625478A (en) * | 2021-09-14 | 2021-11-09 | 青岛大学 | Magneto-optical modulator |
| CN113625478B (en) * | 2021-09-14 | 2023-11-10 | 青岛大学 | Magneto-optical modulator |
| CN113784491A (en) * | 2021-09-22 | 2021-12-10 | 南京信息工程大学 | Plasma electromagnetic parameter measuring method based on defect microwave photonic crystal |
| CN113784491B (en) * | 2021-09-22 | 2023-02-14 | 南京信息工程大学 | Plasma electromagnetic parameter measuring method based on defect microwave photonic crystal |
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