CN104477894A - Method for transferring graphene - Google Patents
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- CN104477894A CN104477894A CN201410766062.3A CN201410766062A CN104477894A CN 104477894 A CN104477894 A CN 104477894A CN 201410766062 A CN201410766062 A CN 201410766062A CN 104477894 A CN104477894 A CN 104477894A
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Abstract
The invention provides a method for transferring graphene. The method for transferring graphene comprises the following steps: (a) bonding a target base with a substrate deposited with graphene by adopting an electrostatic process, so as to obtain a substrate-graphene-target base composite membrane; and (b) peeling off the substrate in the substrate-graphene-target base composite membrane. The method for transferring graphene has the advantages that the substrate deposited with graphene is bonded with the target base by adopting an electrostatic force, thus no bonding agent is used, no residual bonding agent is left on the transferred graphene, no pollution is produced to the transferred graphene, and completeness of graphene is guaranteed; and rapid, complete, lossless and pollution-free roll-to-roll graphene transferring can be realized by adopting the method provided by the invention.
Description
Technical field
The present invention relates to technical field of graphene, particularly relate to a kind of method shifting Graphene.
Background technology
Graphene is the plane monoatomic layer thin-film material formed by hexagonal structure by carbon atom.Since being found first from 2004, because Graphene has outstanding heat conductivility and mechanical property, high electron mobility, half-integer quantum hall effect etc., Graphene causes the extensive concern of scientific circles in electron device, transparency electrode, electrical condenser, sensor and matrix material, becomes the popular research field in the current world.Based on the potential application of Graphene.The Graphene prepared is used for above-mentioned field, usually needs Graphene to transfer on insulating body.
Chemical Vapor deposition process (CVD) growth method is as the main stream approach preparing Graphene now in the world, and it is not by the restriction of substrate dimension, and equipment is simple, can produce in enormous quantities.But original graphite alkene prepared by CVD growth method deposits on the metallic substrate, metal substrate, as one conduction, nontransparent base material, have impact on the application of Graphene, Graphene must be transferred in insulating substrate.Remain in residue on Graphene after transfer or pollutent will reduce the mobility of Graphene, and then affect the electric property of Graphene.Therefore, how to ensure that Graphene can't harm, free of contaminationly transfer to that other is flexible, insulation, on elastomeric base material film, being a major challenge of current Graphene widespread use, is gordian technique urgently to be resolved hurrily.
The metal substrate and dielectric base that deposit Graphene are mainly bondd by colloid by transfer Graphene method conventional at present, then peel off substrate.As application number a kind of method shifting Graphene disclosed in the Chinese patent of 201210416963.0; graphene film CVD prepared adheres to one deck Thermal release adhesive tape on the surface as protective layer; the metal substrate supporting Graphene is removed with corrosive fluid; by Thermal release adhesive tape and graphene film adheres on piezoelectric membrane; Thermal release adhesive tape is removed in heating, transfers on piezoelectric membrane by Graphene.But this method easily produces the residual of glue, causes the pollution of Graphene, and then the electric property of the rear Graphene of transfer can be affected.
Summary of the invention
The object of the present invention is to provide a kind of method shifting Graphene, the Graphene after method transfer provided by the invention is complete, pollution-free, nothing is damaged.
The invention provides a kind of method shifting Graphene, comprise the following steps:
A) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane;
B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.
Preferably, the voltage of described Electrostatic Treatment is 100V ~ 40KV.
Preferably, the time of described Electrostatic Treatment is 1s ~ 10000s.
Preferably, described step a) is specially:
By be attached at after target substrate Electrostatic Treatment deposit Graphene substrate in Graphene side, form the first substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in first-target substrate composite membrane precursor is carried out pressing process, obtains substrate-Graphene-target substrate composite membrane.
Preferably, described step a) is specially:
Target substrate is attached at Graphene side in the substrate depositing Graphene, pressing process forms the second substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in second-target substrate composite membrane film precursor is carried out Electrostatic Treatment, obtains substrate-Graphene-target substrate composite membrane.
Preferably, described Electrostatic Treatment adopts electrostatic generator to carry out;
Described pressing was treated to roll extrusion and closed process, and described pressing process adopts laminating machine to carry out.
Preferably, the described speed crossing roll extrusion conjunction process is 0.01m/min ~ 1m/min.
Preferably, described electrostatic generator comprises electrostatic and produces rod, and described electrostatic produces excellent top and is provided with emission needle;
Described electrostatic produces the surface of rod perpendicular to described substrate-Graphene-target substrate composite membrane precursor;
The vertical range on the needle point of described emission needle and the surface of described substrate-Graphene-target substrate composite membrane precursor is 1cm ~ 100cm.
Preferably, the pressure of described pressing process is 1MPa ~ 5MPa.
Preferably, the temperature of described pressing process is 30 DEG C ~ 60 DEG C.
The invention provides a kind of method shifting Graphene, comprise the following steps: a) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane; B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.Method provided by the invention adopts electrostatic force to be combined with target substrate by the substrate depositing Graphene, avoid the use of glue, thus Graphene after the transfer can not leave removing residual glue, pollution-free to the Graphene after transfer, and ensure that the integrity of Graphene.Method provided by the invention can realize quick, intact, the free of contamination transfer of Graphene, and cost is low.Experimental result shows, the Graphene after adopting method provided by the invention to shift, sheet resistance is at 1000 Ω/below.
Accompanying drawing explanation
Fig. 1 is the first Electrostatic Treatment-press binding device that the embodiment of the present invention adopts;
Fig. 2 is the second Electrostatic Treatment-press binding device that the embodiment of the present invention adopts.
Embodiment
The invention provides a kind of method shifting Graphene, comprise the following steps:
A) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane;
B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.
Method provided by the invention adopts electrostatic force to be combined with target substrate by the substrate depositing Graphene, avoid the use of glue, thus Graphene after the transfer can not leave removing residual glue, pollution-free to the Graphene after transfer, and ensure that the integrity of Graphene.Method provided by the invention can realize quick, intact, the free of contamination transfer of Graphene.
The present invention adopts the method for Electrostatic Treatment, target substrate and the substrate depositing Graphene is bonded, obtains substrate-Graphene-target substrate composite membrane.In the present invention, adopt the method for Electrostatic Treatment to carry out bonding with the substrate depositing Graphene target substrate and first can carry out Electrostatic Treatment to target substrate, again the target substrate after Electrostatic Treatment and the substrate depositing Graphene are carried out pressing process, obtain substrate-Graphene-target substrate composite membrane, be preferably specially:
By be attached at after target substrate Electrostatic Treatment deposit Graphene substrate in Graphene side, form the first substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in first-target substrate composite membrane precursor is carried out pressing process, obtains substrate-Graphene-target substrate composite membrane.
Target substrate after Graphene side in the substrate depositing Graphene and Electrostatic Treatment preferably attaches by the present invention, obtains the first substrate-Graphene-target substrate composite membrane precursor.The method of the present invention to deposited graphite alkene does not over the substrate have special restriction, adopts the method for chemical vapour deposition well known to those skilled in the art, at deposited on substrates Graphene, obtains the substrate depositing Graphene.The kind of the present invention to described substrate does not have special restriction, adopts substrate well known to those skilled in the art, as being Copper Foil, nickel foil, aluminium foil or goldleaf etc.In the present invention, described in be deposited on Graphene on substrate can be individual layer, can be multilayer, the present invention have special restriction to this yet.
Target substrate after Graphene side in the substrate depositing Graphene and Electrostatic Treatment attaches by the present invention.The kind of the present invention to described target substrate does not have special restriction, adopt target substrate well known to those skilled in the art, as being organic film, sheet glass or silicon chip, in the present invention, described organic film preferably includes but is not limited to PET film, PE film or PVC film.In the present invention, the thickness of described target substrate is preferably 0.012mm ~ 2mm, is more preferably 0.02mm ~ 1.8mm, most preferably is 0.04mm ~ 1.5mm.
Target substrate after Graphene side in the substrate depositing Graphene and Electrostatic Treatment attaches by the present invention, forms the first substrate-Graphene-target substrate composite membrane precursor.Target substrate is first carried out Electrostatic Treatment by the present invention, then the target substrate after described Electrostatic Treatment and Graphene side in the substrate depositing Graphene is attached.In the present invention, the voltage of described Electrostatic Treatment is preferably 100V ~ 40KV, is more preferably 5KV ~ 35KV, most preferably is 15KV ~ 30KV.In the present invention, the time of described Electrostatic Treatment is preferably 1s ~ 10000s, is more preferably 5s ~ 5000s, most preferably is 10s ~ 60s.
In the present invention, the process of described Electrostatic Treatment preferably adopts electrostatic generator to carry out, and the kind of the present invention to described electrostatic generator does not have special restriction, adopts electrostatic generator well known to those skilled in the art.In the present invention, described electrostatic generator preferably includes electrostatic and produces rod, and described electrostatic produces on rod and is provided with emission needle.The present invention is in the process of carrying out described Electrostatic Treatment, and described electrostatic produces the surface that rod is preferably perpendicular to described first substrate-Graphene-target substrate composite membrane precursor; The needle point of described emission needle is preferably 1cm ~ 100cm apart from the vertical range on the surface of described first substrate-Graphene-target substrate composite membrane precursor, is more preferably 2cm ~ 50cm, most preferably is 3cm ~ 10cm.
After obtaining the first substrate-Graphene-target substrate composite membrane precursor, described first substrate-Graphene-target substrate composite membrane precursor is carried out pressing process by the present invention, obtains substrate-Graphene-target substrate composite membrane.The method of the present invention to described pressing process does not have special restriction, adopts the technical scheme of pressing well known to those skilled in the art, as being roll extrusion.In the present invention, described pressing process was preferably roll extrusion and closed process; Described pressing process adopts laminating machine to carry out.In an embodiment of the present invention, preferably the first substrate obtained-Graphene-target substrate composite membrane precursor is carried out pressing process by laminating machine, obtain substrate-Graphene-target substrate composite membrane.In the present invention, the pressure of described pressing process is preferably 1MPa ~ 5MPa, is more preferably 2MPa ~ 3MPa; The temperature of described pressing process is preferably 30 DEG C ~ 60 DEG C, be more preferably 35 DEG C ~ 55 DEG C, most preferably be 40 DEG C ~ 50 DEG C in the present invention, described substrate-Graphene-target substrate precursor is preferably 0.01m/min ~ 1m/min by the speed of described laminating machine, be more preferably 0.02m/min ~ 0.5m/min, most preferably be 0.03m/min ~ 0.2m/min.
In the present invention, first target substrate can also be attached at Graphene side in the substrate depositing Graphene, carry out Electrostatic Treatment again after pressing, obtain substrate-Graphene-target substrate composite membrane, be preferably specially:
Target substrate is attached at Graphene side in the substrate depositing Graphene, pressing process forms the second substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in described second-target substrate composite membrane film precursor is carried out Electrostatic Treatment, obtains substrate-Graphene-target substrate composite membrane.
Target substrate is preferably attached at Graphene side in the substrate depositing Graphene by the present invention, forms the second substrate-Graphene-target substrate composite membrane precursor after pressing process.In the present invention, the kind of described substrate is consistent with substrate described in technique scheme with source, does not repeat them here; The described kind depositing the substrate of Graphene is consistent with the substrate depositing Graphene described in technique scheme with source, does not repeat them here.The method of the present invention to described pressing process does not have special restriction, adopts the technical scheme of pressing well known to those skilled in the art, as being roll extrusion.In the present invention, described pressing process was preferably roll extrusion and closed process; Described pressing process adopts laminating machine to carry out.In an embodiment of the present invention, carry out pressing process by laminating machine after preferably target substrate and the substrate depositing Graphene being attached, obtain the second substrate-Graphene-target substrate composite membrane precursor.In the present invention, the pressure of described pressing process is preferably 1MPa ~ 5MPa, is more preferably 2MPa ~ 3MPa; The temperature of described pressing process is preferably 30 DEG C ~ 60 DEG C, be more preferably 35 DEG C ~ 55 DEG C, most preferably be 40 DEG C ~ 50 DEG C in the present invention, the speed of described pressing process is preferably 0.01m/min ~ 1m/min, be more preferably 0.02m/min ~ 0.5m/min, most preferably be 0.03m/min ~ 0.2m/min.
After pressing process forms the second substrate-Graphene-target substrate composite membrane precursor, substrate-Graphene described in described second-target substrate composite membrane film precursor is preferably carried out Electrostatic Treatment, obtains substrate-Graphene-target substrate composite membrane by the present invention.In the present invention, the voltage of described Electrostatic Treatment is preferably 100V ~ 40KV, is more preferably 5KV ~ 35KV, most preferably is 15KV ~ 30KV.In the present invention, the time of described Electrostatic Treatment is preferably 1s ~ 10000s, is more preferably 5s ~ 5000s, most preferably is 10s ~ 60s.
In the present invention, the process of described Electrostatic Treatment preferably adopts electrostatic generator to carry out, and the kind of the present invention to described electrostatic generator does not have special restriction, adopts electrostatic generator well known to those skilled in the art.In the present invention, described electrostatic generator preferably includes electrostatic and produces rod, and described electrostatic produces on rod and is provided with emission needle.The present invention is in the process of carrying out described Electrostatic Treatment, and described electrostatic produces the surface that rod is preferably perpendicular to described first substrate-Graphene-target substrate composite membrane precursor; The needle point of described emission needle is preferably 1cm ~ 100cm apart from the vertical range on the surface of described first substrate-Graphene-target substrate composite membrane precursor, is more preferably 2cm ~ 50cm, most preferably is 3cm ~ 10cm.
Concrete, Electrostatic Treatment-the press binding device shown in Fig. 1 or Fig. 2 can be adopted in an embodiment of the present invention to prepare substrate-Graphene-target substrate composite membrane, Fig. 1 is the first Electrostatic Treatment-press binding device that the embodiment of the present invention adopts, in Fig. 1,1 and 2 are respectively substrate and target substrate, 3 is the power supply of electrostatic generator, and 4 is electrostatic generator, and 5 is cylinder.When adopting Fig. 1 shown device to prepare substrate-Graphene-target substrate composite membrane, the present invention is attached at after target substrate is carried out Electrostatic Treatment and deposits on the substrate of Graphene, carrying out roll extrusion conjunction process, obtain substrate-Graphene-target substrate composite membrane: target substrate by electrostatic generator, is carried out Electrostatic Treatment by the present invention; With the substrate attaching depositing Graphene, then through cylinder pressing, obtain substrate-Graphene-target substrate composite membrane;
Fig. 2 is the second Electrostatic Treatment-press binding device that the embodiment of the present invention adopts, and in Fig. 2,1 and 3 are respectively the substrate and target substrate that deposit Graphene, and 2 is Graphene, and 4 is the power supply of electrostatic generator, and 5 is electrostatic generator, and 6 is cylinder.When adopting Fig. 2 shown device to prepare substrate-Graphene-target substrate composite membrane, first target substrate and the substrate depositing Graphene being crossed roll extrusion and closing process, then carrying out Electrostatic Treatment, forming substrate-Graphene-target substrate composite membrane.
After obtaining substrate-Graphene-target substrate composite membrane, the present invention peels off the substrate in described substrate-Graphene-target substrate composite membrane, Graphene by substrate-transfer in target substrate.The method of the present invention to described stripping does not have special restriction, adopts the technical scheme at the bottom of peeling liner well known to those skilled in the art, peels off as adopted electrochemical etching stripping, mechanically peel or chemical etching.
Concrete, in an embodiment of the present invention, when adopting chemical etching to peel off the substrate in described substrate-Graphene-target substrate composite membrane, described substrate-Graphene-target substrate composite membrane is placed in etching liquid, substrate etching is fallen.In the present invention, described etching liquid preferably includes but is not limited to one or more in acidic cupric chloride solutions, ferric chloride Solution, alkaline Cupric Chloride Solution, sulfuric acid-hydrogen peroxide solution and ammonium persulfate solution.The mass concentration of the present invention to described etching liquid does not have special restriction, can reach the effect etching away described substrate; In the present invention, the selection of the mass concentration of described etching liquid is determined by the speed needing to etch.Concrete, in an embodiment of the present invention, the mass concentration of described ammonium persulfate solution can be 2% ~ 15%, can, for being preferably 4% ~ 13%, can also be also be preferably 6% ~ 11%.The present invention does not have special restriction the time to described etching, described substrate etching can be fallen;
After completing described etching, the present invention preferably takes out the etching object in described etching liquid, obtains Graphene-target substrate, by Graphene by substrate-transfer in target substrate.
Described Graphene-target substrate repetition can also attach with the substrate depositing Graphene by method provided by the invention, Electrostatic Treatment, etching, continue to transfer Graphene in Graphene side in described Graphene-target substrate, to meet the demand of different thickness Graphene.Method provided by the invention, when carrying out repeatedly Graphene transfer, also can ensure that the Graphene after shifting is complete, harmless, pollution-free.
The invention provides a kind of method shifting Graphene, comprise the following steps: a) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane; B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.Method provided by the invention adopts electrostatic force to be combined with target substrate by the substrate depositing Graphene, avoid the use of glue, thus Graphene after the transfer can not leave removing residual glue, pollution-free to the Graphene after transfer, and ensure that the integrity of Graphene.Method provided by the invention can realize quick, intact, the free of contamination transfer of Graphene, and cost is low.Experimental result shows, the Graphene after adopting method provided by the invention to shift, sheet resistance is at 1000 Ω/below.
In order to further illustrate the present invention, being described in detail below in conjunction with the method for embodiment to transfer Graphene provided by the invention, but they can not being interpreted as limiting the scope of the present invention.
Embodiment 1
CVD grows single-layer graphene on Copper Foil, obtains the Copper Foil depositing Graphene;
Take thickness as the PET film of 0.012mm be target substrate, the device shown in Fig. 1 is adopted to prepare Copper Foil-Graphene-PET composite membrane, by be attached at after target substrate Electrostatic Treatment deposit Graphene Copper Foil in Graphene side, electrostatic power unit voltage is 20KV, the Electrostatic Treatment time is 60s, in electrostatic power unit, electrostatic produces the vertical Copper Foil of the transmitting needle point-Graphene-PET composite film surface of rod, apart from Copper Foil-Graphene-PET composite film surface 1cm, obtains Copper Foil-Graphene-PET composite membrane precursor;
Copper Foil-Graphene-PET composite membrane precursor was carried out roll extrusion with the speed of 0.01m/min by laminating machine close, the pressure crossing roll extrusion conjunction is 2MPa, and the temperature crossing roll extrusion conjunction is 30 DEG C;
By cross roll extrusion close after Copper Foil-Graphene-PET composite membrane be placed in mass concentration be 2% ammonium persulfate solution etch, etched rear taking-up, cleaning, oven dry, obtained single-layer graphene-PET composite membrane.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
Embodiment 2
According to the technical scheme of embodiment 1, the single-layer graphene be deposited on Copper Foil is transferred in PET film, then according to following process, then shift a single-layer graphene to the surface of single-layer graphene in this PET film:
CVD grows single-layer graphene on Copper Foil, obtains the Copper Foil depositing Graphene;
The PET film of single-layer graphene is had for target substrate with above-mentioned load, the device shown in Fig. 2 is adopted to prepare Copper Foil-Graphene-PET composite membrane, side target substrate being attached at Graphene in the Copper Foil depositing Graphene is crossed after process is closed in roll extrusion and is carried out Electrostatic Treatment, obtain Copper Foil-two layer graphene-PET composite membrane, electrostatic power unit voltage is 15KV, the Electrostatic Treatment time is 500s, in electrostatic power unit, electrostatic produces transmitting needle point vertical Copper Foil-two layer graphene-PET composite film surface of rod, apart from Copper Foil-two layer graphene-PET composite film surface 10cm; The pressure crossing roll extrusion conjunction is 2MPa, and the temperature crossing roll extrusion conjunction is 40 DEG C;
Copper Foil-two layer graphene-PET composite membrane obtained is placed in mass concentration be 15% ammonium persulfate solution etch;
After having etched, take out, clean, dry, obtain two layer graphenes-PET film complex body.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
Embodiment 3
According to the single-layer graphene transfer that the technical scheme of embodiment 1 will be deposited on Copper Foil; unlike; in the present embodiment; the PE protective membrane of target substrate to be thickness be 2mm; Copper Foil-Graphene-PE composite membrane is 0.5m/min by the speed of Fig. 1 shown device; transmitting needle point distance Copper Foil-Graphene-PE composite membrane that electrostatic produces rod is 5cm, and the temperature crossing roll extrusion conjunction is 35 DEG C, and the mass concentration of etching liquid ammonium persulphate is 5%.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
Embodiment 4
According to the technical scheme of embodiment 3, the single-layer graphene be deposited on Copper Foil is transferred on PE protective membrane, then according to following process, then shift a single-layer graphene to the surface of single-layer graphene on this PE protective membrane:
CVD grows single-layer graphene on Copper Foil, obtains the Copper Foil depositing Graphene;
The PE film of single-layer graphene is had for target substrate with above-mentioned load, the device shown in Fig. 2 is adopted to prepare Copper Foil-Graphene-PET composite membrane, target substrate is attached in Graphene-Copper Foil the rear flank depositing Graphene and crosses roll extrusion conjunction process, carry out Electrostatic Treatment again, obtain Copper Foil-two layer graphene-PE composite membrane, electrostatic power unit voltage is 15KV, the Electrostatic Treatment time is 5000s, in electrostatic power unit, electrostatic produces transmitting needle point vertical Copper Foil-two layer graphene-PE composite film surface of rod, apart from Copper Foil-two layer graphene-PE composite film surface 3cm; The pressure crossing roll extrusion conjunction is 2MPa, and the temperature crossing roll extrusion conjunction is 45 DEG C;
Copper Foil-two layer graphene-PE composite membrane obtained is placed in mass concentration be 10% ammonium persulfate solution etch;
After having etched, take out, clean, dry, obtain two layer graphenes-PET film complex body.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
Embodiment 5
According to the technical scheme of embodiment 1, carry out Graphene by Copper Foil being transferred in PET film, unlike, in the present embodiment, in the application etching liquid to be mass concentration be 10% acidic cupric chloride solutions.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
Embodiment 6
According to the technical scheme of embodiment 5, the single-layer graphene be deposited on Copper Foil is transferred in PET film, repeat the technical scheme of embodiment 5 again, the single-layer graphene on Copper Foil is transferred on the Graphene on single-layer graphene-PTE surface, obtain two layer graphene-PET composite membranes.
Embodiment 7
According to the technical scheme of embodiment 1, carry out Graphene by Copper Foil being transferred in PET film, unlike, in the present embodiment, electrostatic power unit voltage is 5KV, and the Electrostatic Treatment time is 5000s.
Embodiment 8
According to the technical scheme of embodiment 1, carry out Graphene by Copper Foil being transferred in PET film, unlike, in the present embodiment, electrostatic power unit voltage is 100V, and the Electrostatic Treatment time is 10000s.
Embodiment 9
According to the technical scheme of embodiment 1, carry out Graphene by Copper Foil being transferred in PET film, unlike, in the present embodiment, electrostatic power unit voltage is 1KV, and the Electrostatic Treatment time is 100s.
Embodiment 10
According to the technical scheme of embodiment 1, carry out Graphene by Copper Foil being transferred in PET film, unlike, in the present embodiment, electrostatic power unit voltage is 500V, and the Electrostatic Treatment time is 500s.
The present invention detects the sheet resistance of the rear Graphene of transfer, and result is as table 1, and table 1 is the technical parameter of the embodiment of the present invention and the sheet resistance of the rear Graphene of transfer.
The sheet resistance of the technical parameter of table 1 embodiment of the present invention and the rear Graphene of transfer
| Embodiment | Electrostatic power unit voltage | Target substrate | Etching liquid | Sheet resistance (Ω/) |
| 1 | 20KV | PET | Ammonium persulphate | <1000 |
| 2 | 15KV | PET | Ammonium persulphate | <1000 |
| 3 | 20KV | PE protective membrane | Ammonium persulphate | <1000 |
| 4 | 15KV | PE protective membrane | Ammonium persulphate | <1000 |
| 5 | 20KV | PET | Acidic copper chloride | <1000 |
| 6 | 15KV | PET | Acidic copper chloride | <1000 |
| 7 | 5KV | PET | Ammonium persulphate | <1000 |
| 8 | 100V | PET | Ammonium persulphate | <1000 |
| 9 | 1KV | PET | Ammonium persulphate | <1000 |
| 10 | 500V | PET | Ammonium persulphate | <1000 |
As can be seen from Table 1, after the Graphene on Copper Foil is transferred to target substrate by method provided by the invention, Graphene has uniform sheet resistance, and this illustrates that the Graphene after transfer is complete, harmless, pollution-free.
As seen from the above embodiment, the invention provides a kind of method shifting Graphene, comprise the following steps: a) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane; B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.Method provided by the invention adopts electrostatic force to be combined with target substrate by the substrate depositing Graphene, avoid the use of glue, thus Graphene after the transfer can not leave removing residual glue, pollution-free to the Graphene after transfer, and ensure that the integrity of Graphene.Method provided by the invention can realize quick, intact, the free of contamination transfer of Graphene, and cost is low.Experimental result shows, the Graphene after adopting method provided by the invention to shift, sheet resistance is at 1000 Ω/below.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. shift a method for Graphene, comprise the following steps:
A) adopt Electrostatic Treatment, target substrate and the substrate depositing Graphene are bonded, obtains substrate-Graphene-target substrate composite membrane;
B) substrate in described substrate-Graphene-target substrate composite membrane is peeled off.
2. method according to claim 1, is characterized in that, the voltage of described Electrostatic Treatment is 100V ~ 40KV.
3. method according to claim 1, is characterized in that, the time of described Electrostatic Treatment is 1s ~ 10000s.
4. method according to claim 1, is characterized in that, described step a) is specially:
By be attached at after target substrate Electrostatic Treatment deposit Graphene substrate in Graphene side, form the first substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in first-target substrate composite membrane precursor is carried out pressing process, obtains substrate-Graphene-target substrate composite membrane.
5. method according to claim 1, is characterized in that, described step a) is specially:
Target substrate is attached at Graphene side in the substrate depositing Graphene, pressing process forms the second substrate-Graphene-target substrate composite membrane precursor;
Substrate-Graphene described in second-target substrate composite membrane film precursor is carried out Electrostatic Treatment, obtains substrate-Graphene-target substrate composite membrane.
6. the method according to claim 4 or 5 any one, is characterized in that, described Electrostatic Treatment adopts electrostatic generator to carry out;
Described pressing was treated to roll extrusion and closed process, and described pressing process adopts laminating machine to carry out.
7. method according to claim 6, is characterized in that, the described speed crossing roll extrusion conjunction process is 0.01m/min ~ 1m/min.
8. method according to claim 6, is characterized in that, described electrostatic generator comprises electrostatic and produces rod, and described electrostatic produces excellent top and is provided with emission needle;
Described electrostatic produces the surface of rod perpendicular to described substrate-Graphene-target substrate composite membrane precursor;
The vertical range on the needle point of described emission needle and the surface of described substrate-Graphene-target substrate composite membrane precursor is 1cm ~ 100cm.
9. the method according to claim 4 or 5, is characterized in that, the pressure of described pressing process is 1MPa ~ 5MPa.
10. the method according to claim 4 or 5, is characterized in that, the temperature of described pressing process is 30 DEG C ~ 60 DEG C.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN107037932A (en) * | 2016-02-04 | 2017-08-11 | 中国科学院金属研究所 | A kind of method that grapheme capacitive touch screen is made based on cover plate transfer techniques |
| CN109534326A (en) * | 2019-01-09 | 2019-03-29 | 北京石墨烯研究院 | Graphene film transfer device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106276862A (en) * | 2015-05-11 | 2017-01-04 | 中国科学院金属研究所 | A kind of volume to volume shifts the device of Graphene continuously |
| CN106276862B (en) * | 2015-05-11 | 2019-02-19 | 中国科学院金属研究所 | A kind of device of roll-to-roll continuous transfer graphene |
| CN104890312A (en) * | 2015-06-24 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Method of protecting graphene layer on substrate and graphene composite |
| CN107037932A (en) * | 2016-02-04 | 2017-08-11 | 中国科学院金属研究所 | A kind of method that grapheme capacitive touch screen is made based on cover plate transfer techniques |
| CN109534326A (en) * | 2019-01-09 | 2019-03-29 | 北京石墨烯研究院 | Graphene film transfer device |
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