CN104466657A - Chip-integrated 2-micrometer wavelength micro laser - Google Patents
Chip-integrated 2-micrometer wavelength micro laser Download PDFInfo
- Publication number
- CN104466657A CN104466657A CN201410625717.5A CN201410625717A CN104466657A CN 104466657 A CN104466657 A CN 104466657A CN 201410625717 A CN201410625717 A CN 201410625717A CN 104466657 A CN104466657 A CN 104466657A
- Authority
- CN
- China
- Prior art keywords
- micro
- silica
- ring core
- power
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 21
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 21
- 239000002121 nanofiber Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 8
- 238000003980 solgel method Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 205
- 239000000377 silicon dioxide Substances 0.000 claims description 95
- -1 thulium ion Chemical class 0.000 claims description 35
- 229910052775 Thulium Inorganic materials 0.000 claims description 25
- 229910052689 Holmium Inorganic materials 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 2
- 238000010992 reflux Methods 0.000 abstract description 4
- WQNUBQUNDDGZTB-UHFFFAOYSA-N [Ho].[Tm] Chemical compound [Ho].[Tm] WQNUBQUNDDGZTB-UHFFFAOYSA-N 0.000 description 10
- 238000002156 mixing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 5
- 238000004093 laser heating Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WDVGLADRSBQDDY-UHFFFAOYSA-N holmium(3+);trinitrate Chemical compound [Ho+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O WDVGLADRSBQDDY-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- LLZBVBSJCNUKLL-UHFFFAOYSA-N thulium(3+);trinitrate Chemical compound [Tm+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O LLZBVBSJCNUKLL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention discloses a chip-integrated 2-micrometer wavelength micro laser. The chip-integrated 2-micrometer wavelength micro laser comprises a rare earth doping monox micro ring core cavity and a micro-nano fiber, wherein the micro-nano fiber is located on one side of the monox micro ring core cavity. The monox micro ring core cavity is prepared through the following steps that (1) a rare earth doping monox film is prepared on the surface of a silicon wafer through a sol-gel method; (2) a monox micro disc cavity is prepared on the surface of the monox film through a photoetching process and an etching process; (3) heating reflux treatment is carried out on the monox micro disc cavity through a carbon dioxide laser to obtain the monox micro ring core cavity. The 2-micrometer wavelength micro laser prepared through the sol-gel rare earth doping method has the advantages of being integrated in chip, micro, stable, low in threshold and the like, the energy mode volume in the cavity can be optimized according to the carbon dioxide laser reflux power and time, and a laser with a higher quality is obtained.
Description
Technical field
The invention belongs to micronano optical devices field, be specifically related to a kind of method utilizing collosol and gel rear-earth-doped and prepare 2 micron wave length microlasers.
Background technology
The laser of 2 micron wave lengths belongs in eye-safe spectral region, can be widely used in laser surgey aspect, and have the advantage of its uniqueness in laser sensing, material processed and space communication etc.In addition, microlaser is a kind of very important integrated optics electronic devices and components, and in optical integrated circuit and information processing, the aspects such as bio-sensing all have a wide range of applications.Now, micro-dish chamber of silica or micro-ring core chamber well can use ripe integrated technique preparation.Meanwhile, use micro-nano fiber to prepare with micro-dish chamber or being coupled of micro-ring core chamber the seminar course that laser becomes awfully hot door, and micro-ring core cavity laser has lower threshold value, and be easy to the advantages such as integrated chip.But still nobody develops the microlaser of the integrated chip of 2 micron wavebands so far.
Summary of the invention
Goal of the invention: the object of the invention is the deficiency for prior art microlaser, provides a kind of 2 micron wave length microlasers of the integrated chip utilizing the rear-earth-doped method of collosol and gel to prepare.
Technical scheme: for achieving the above object, 2 micron wave length microlasers of the present invention can adopt following technical scheme:
A kind of 2 micron wave length microlasers of integrated chip, comprise the micro-ring core chamber of rear-earth-doped silica and micro-nano fiber, wherein micro-nano fiber is positioned at the side in the micro-ring core chamber of described silica, the optical maser wavelength of described microlaser is 1750 nanometer ~ 2050 nanometers, and the micro-ring core chamber of described silica prepares by the following method:
(1) prepare rear-earth-doped silicon oxide film by sol-gal process at silicon chip surface, wherein, the rare earth impurities mixed in sol-gel process is thulium ion and holmium ion, and the concentration ratio of thulium ion and holmium ion is 5-40;
(2) prepare the micro-dish chamber of silica with photoetching, hf etching and xenon difluoride etching technics on the surface at described silicon oxide film, the micro-dish chamber of described silica connects silicon chip by silicon post;
(3) utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish chamber of described silica, the power of described carbon dioxide laser is 7 ~ 10W, and the time of heating reflow treatment is 25 ~ 35 seconds, finally, and the obtained micro-ring core chamber of silica.
Can shift by forming energy between the thulium ion adulterated in step 1) and holmium ion, and then produce the Laser output of 2 micron wavebands.
Beneficial effect: the characteristics such as the 2 micron wave length microlasers utilizing the rear-earth-doped method of collosol and gel to prepare of the present invention have integrated chip, microminiaturization, stable, threshold value is low, the power refluxed by carbon dioxide laser and time, the energy model volume in chamber can be optimized, obtain the laser that quality is more excellent.
Further, utilize carbon dioxide laser to carry out heating reflow treatment to described silica micro-dish chamber in step (3) to comprise the following steps: the surperficial 10-15 second of first irradiating described silica micro-dish chamber with the first power laser, obtain the micro-ring core chamber of initial condition silica, then the surperficial 15-20 second in described initial condition micro-ring core chamber is irradiated with the second power laser, finally, the obtained micro-ring core chamber of silica, wherein, the power of the first power laser is greater than the power of the second power laser, and the power of the first power laser and the second power laser is 7 ~ 10W.Micro-for silica dish chamber is first heated as the micro-ring core chamber of initial condition silica by the first power laser by the present invention, obtain the more uniform micro-ring core chamber of silica of material by second power laser heating initial condition silica micro-ring core chamber again, the laser quality obtained is more excellent.
Further, the power of described first power laser is 10W, the time that first power laser irradiates surface, described silica micro-dish chamber is 10 seconds, obtain the micro-ring core chamber of initial condition silica, the power of described second power laser is 7 W, and the time that the second power laser irradiates surface, described initial condition micro-ring core chamber is 15 seconds.Carry out heating reflow treatment by above process to the micro-dish chamber of silica, the silica obtained micro-ring core chamber uniform in material degree is best, and the laser prepared is best in quality.
Further, described micro-nano fiber diameter is 1 micron ~ 2 microns.
Further, the diameter in the micro-ring core chamber of described silica is 20 microns ~ 1 millimeter.
Further, the thickness of silicon oxide film described in step (1) is 1 micron ~ 2 microns.
The invention also discloses a kind of manufacture method of 2 micron wave length microlasers of integrated chip, comprise the following steps:
A, first prepare silicon oxide film with sol-gal process, wherein, the rare earth impurities mixed in sol-gel process is thulium ion and holmium ion, and the concentration ratio of thulium ion and holmium ion is 5-40;
B, prepare the micro-dish chamber of silica with photoetching, hf etching and xenon difluoride etching technics on the surface at described silicon oxide film, the micro-dish chamber of described silica connects silicon chip by silicon post, and the height of described silicon post is;
C, utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish of described silica, the power of described carbon dioxide laser is 7 ~ 10W, and the time of heating reflow treatment is 25 ~ 35 seconds, and finally, silica micro-dish chamber is melt into the micro-ring core chamber of silica;
D, monomode fiber is drawn into the micro-nano fiber that diameter is 1 micron ~ 2 microns;
E, the micro-nano fiber that steps d obtained, near the micro-ring core chamber of described silica, make coupling therebetween reach best, obtain 2 micron wave length microlasers of integrated chip.
Further, utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish of described silica in step c to comprise the following steps: the surperficial 10-15 second of first irradiating described silica micro-dish chamber with the first power laser, obtain the micro-ring core chamber of initial condition silica, then the surperficial 15-20 second in described initial condition micro-ring core chamber is irradiated with the second power laser, finally, the obtained micro-ring core chamber of silica, wherein, the power of the first power laser is greater than the power of the second power laser, and the power of the first power laser and the second power laser is 7 ~ 10W.Micro-for silica dish chamber is first heated as the micro-ring core chamber of initial condition silica by the first power laser by the present invention, obtain the more uniform micro-ring core chamber of silica of material by second power laser heating initial condition silica micro-ring core chamber again, the laser quality obtained is more excellent.
Further, the power of described first power laser is 10W, the time that first power laser irradiates surface, described silica micro-dish chamber is 10 seconds, obtain the micro-ring core chamber of initial condition silica, the power of described second power laser is 7 W, and the time that the second power laser irradiates surface, described initial condition micro-ring core chamber is 15 seconds.Carry out heating reflow treatment by above process to the micro-dish chamber of silica, the silica obtained micro-ring core chamber uniform in material degree is best, and the laser prepared is best in quality.
Further, the diameter in the micro-ring core chamber of the silica described in step c is 20 microns ~ 1 millimeter.
Accompanying drawing explanation
Fig. 1 is the structural representation of 2 micron wave length microlasers of integrated chip of the present invention;
Fig. 2 is the Experimental Optical photo of 2 micron wave length microlasers of integrated chip of the present invention;
Fig. 3 is the electron scanning micrograph in the micro-ring core chamber of silica of the present invention;
Fig. 4 embodiment 1 mixes the single-mode laser performance plot of the micro-ring core cavity laser of thulium;
Fig. 5 embodiment 1 mixes the multi-mode laser performance plot of the micro-ring core cavity laser of thulium;
Fig. 6 embodiment 1 mixes the micro-power output of ring core cavity laser of thulium and the relation of pump energy;
Fig. 7 embodiment 1 mixes the threshold value of thulium laser with the variation relation mixing thulium concentration;
Fig. 8 embodiment 2 thulium holmium mixes the single-mode laser performance plot of micro-ring core cavity laser altogether;
Fig. 9 embodiment 2 thulium holmium mixes the multi-mode laser performance plot of micro-ring core cavity laser altogether;
Figure 10 embodiment 2 thulium holmium mixes micro-power output of ring core cavity laser and the relation of pump energy altogether;
Figure 11 embodiment 2 thulium holmium mixes the variation relation of threshold value with thulium holmium concentration ratio of micro-ring core cavity laser altogether.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Refer to shown in Fig. 1, Fig. 2 and Fig. 3, the present invention's sol-gal process prepares rear-earth-doped silicon oxide film at silicon chip surface, prepares the micro-dish chamber of silica by photoetching, etching technics, then with obtaining the micro-ring core chamber 2 of silica after carbon dioxide laser process.By a micro-nano fiber 1 near silica micro-ring core chamber 2 side, the evanscent field effect on its surface is utilized to excite the gain media in micro-ring core chamber thus produce laser.
Wherein, micro-nano fiber diameter is 1 micron ~ 2 microns.The diameter in the micro-ring core chamber of silica is 20 microns ~ 1 millimeter, and the arbitrary diameter in this interval can be prepared.Preferably, silica micro-ring core chamber diameter is 20 microns ~ 70 microns, and now 2 micron wave length silica micro-ring core cavity laser integrated chip, microminiaturization, stable, threshold value is low etc., and characteristic is better.The rare earth impurities mixed is thulium ion and holmium ion, and wherein, the concentration ratio of thulium ion and holmium ion is 5-40.Be preferably thulium nitrate and holmium nitrate.
The preparation process of the present invention 2 micron wave length laser is as follows:
(1) first prepare rear-earth-doped silicon oxide film with sol-gal process, film thickness is 1 micron ~ 2 microns; (2), after utilizing photoetching, wet etching and dry etching, the micro-dish chamber of silica is obtained; (3) utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish chamber of silica, wherein, the power of carbon dioxide laser is 7 ~ 10W, and the time of heating reflow treatment is 25 ~ 35 seconds, micro-for silica dish chamber is melt into the micro-ring core chamber of silica.Concrete, utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish of described silica to comprise the following steps: the surperficial 10-15 second of first irradiating described silica micro-dish chamber with the first power laser, obtain the micro-ring core chamber of initial condition silica, then the surperficial 15-20 second in described initial condition micro-ring core chamber is irradiated with the second power laser, finally, the obtained micro-ring core chamber of silica, wherein, the power of the first power laser is greater than the power of the second power laser, and the power of the first power laser and the second power laser is 7 ~ 10W.Micro-for silica dish chamber is first heated as the micro-ring core chamber of initial condition silica by the first power laser by the present invention, obtain the more uniform micro-ring core chamber of silica of material by second power laser heating initial condition silica micro-ring core chamber again, the laser quality obtained is more excellent.Preferably, the power of the first power laser is 10W, and the time that the first power laser irradiates surface, silica micro-dish chamber is 10 seconds, obtains the micro-ring core chamber of initial condition silica, the power of the second power laser is 7 W, and the time that the second power laser irradiates surface, initial condition micro-ring core chamber is 15 seconds.Carry out heating reflow treatment by above process to the micro-dish chamber of silica, the silica obtained micro-ring core chamber uniform in material degree is best, and the laser prepared is best in quality; (4) drawing by high temperature method is utilized to be that the monomode fiber of 125 microns is drawn into the micro-nano fiber that diameter is about 1 micron by diameter, and by its loss control below 5%; (5) by micro-nano fiber near the micro-ring core chamber of silica, ensure that coupling therebetween reaches best; (6) pump light is inputed to micro-ring core resonant cavity 2 from port A, and increase pump power gradually, when pump power exceedes micro-ring core cavity laser threshold value, can Laser output be measured from port B, continue to increase pump light and can obtain different laser output powers.
embodiment 1
Obtain by sol-gal process the doped silicon oxide film that thickness is 1.35 microns, the concentration of wherein mixing thulium ion is respectively 1 × 10
19cm
-3, 2 × 10
19cm
-3, 4 × 10
19cm
-3.Again by after photoetching, wet etching and dry etching, obtain the micro-dish chamber of silica.The micro-ring core chamber of silica is obtained after utilizing carbon dioxide laser to add hot reflux to silica micro-dish chamber.On the other hand, drawing by high temperature method is used general single mode fiber to be drawn into the micro-nano fiber that diameter is 1 micron ~ 2 microns.Then micro-for silica ring core chamber is put on three-dimensional piezoelectric control desk, accurately controls its position, slowly that the two is close, the adjustable continuous pump light of 1.6 micron wavebands is held input from optical fiber A simultaneously.When micro-nano fiber and micro-ring core resonant cavity are in Best Coupling point, namely energy can be absorbed by micro-ring core chamber, along with constantly increasing pump power, rare earth ion can produce fluorescence, will measure the Laser output of output wavelength between 1747 nanometers to 1980 nanometers when the gain in micro-ring core chamber is greater than cavity loss at B port.Fig. 1 is structural principle schematic diagram of the present invention; Fig. 2 and Fig. 3 is Experimental Optical figure of the present invention; Fig. 4 and Fig. 5 is single mode and the multi-mode laser performance plot of mixing the micro-ring core cavity laser of thulium respectively.By test, laser threshold is about 2.8 microwatts, as shown in Figure 6.Figure 7 shows that the threshold value of mixing thulium laser is with the variation relation mixing thulium concentration.As can be seen from the figure, along with the increase of mixing thulium concentration, cause intrinsic loss in chamber to increase, the threshold value of laser can increase thereupon.
embodiment 2
Obtain by sol-gal process the doped silicon oxide film that thickness is 1.35 microns, wherein, the concentration of mixing thulium ion is respectively 2.6 × 10
19cm
-3, 3.3 × 10
19cm
-3, 4 × 10
19cm
-3, the concentration of mixing holmium ion is 5 × 10
18cm
-3.The concentration ratio difference 5.2,6.6,8 of thulium ion and holmium ion.Again by obtaining the thulium holmium micro-ring core chamber of oxygen-doped SiClx altogether after photoetching, etching and carbon dioxide laser reflux technique.Meanwhile, drawing by high temperature legal system is used to obtain the micro-nano fiber that diameter is 1 micron ~ 2 microns.Then the accurate micro-ring core chamber of controlled oxidization silicon and being coupled between micro-nano fiber, hold input by the adjustable continuous pump light of 1.6 micron wavebands from optical fiber A simultaneously.Along with the increase of pumping light power, rare earth ion can produce fluorescence.Meanwhile, thulium ion can absorb the pump light of 1.6 micron wavebands, and then by energy trasfer to holmium ion, holmium ion can transit to excitation state immediately.The Laser output produced by holmium ion transition of 2 micron wavebands will be measured at B port when the gain in micro-ring core chamber is greater than cavity loss.Wherein, Fig. 8 and Fig. 9 is single mode and the multi-mode laser performance plot that thulium holmium mixes micro-ring core cavity laser altogether respectively.By test, laser threshold is about 2.7 microwatts, as shown in Figure 10.Figure 11 shows that thulium holmium mixes the variation relation of threshold value with thulium holmium concentration ratio of laser altogether.Along with the increase of thulium holmium concentration ratio, have more energy and be transferred to holmium ion through thulium ion, make it transit to excitation state, more easily realize the laser that population inversion produces 2 micron wavebands, therefore threshold value can decrease.
The characteristics such as the 2 micron wave length silica micro-ring core cavity laser utilizing the rear-earth-doped method of collosol and gel to prepare of the present invention has integrated chip, microminiaturization, stable, threshold value is low.
Claims (10)
1. 2 micron wave length microlasers of an integrated chip, comprise the micro-ring core chamber of rear-earth-doped silica and micro-nano fiber, wherein micro-nano fiber is positioned at the side in the micro-ring core chamber of described silica, it is characterized in that: the optical maser wavelength of described microlaser is 1750 nanometer ~ 2050 nanometers, and the micro-ring core chamber of described silica prepares by the following method:
(1) prepare rear-earth-doped silicon oxide film by sol-gal process at silicon chip surface, wherein, the rare earth impurities mixed in sol-gel process is thulium ion and holmium ion, and the concentration ratio of thulium ion and holmium ion is 5-40;
(2) prepare the micro-dish chamber of silica with photoetching, hf etching and xenon difluoride etching technics on the surface at described silicon oxide film, the micro-dish chamber of described silica connects silicon chip by silicon post;
(3) utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish chamber of described silica, the power of described carbon dioxide laser is 7 ~ 10W, and the time of heating reflow treatment is 25 ~ 35 seconds, finally, and the obtained micro-ring core chamber of silica.
2. 2 micron wave length microlasers of integrated chip as claimed in claim 1, it is characterized in that: utilize carbon dioxide laser to carry out heating reflow treatment to described silica micro-dish chamber in step (3) and comprise the following steps: the surperficial 10-15 second of first irradiating described silica micro-dish chamber with the first power laser, obtain the micro-ring core chamber of initial condition silica, then the surperficial 15-20 second in described initial condition micro-ring core chamber is irradiated with the second power laser, finally, the obtained micro-ring core chamber of silica, wherein, the power of the first power laser is greater than the power of the second power laser, the power of the first power laser and the second power laser is 7 ~ 10W.
3. 2 micron wave length microlasers of integrated chip as claimed in claim 2, it is characterized in that: the power of described first power laser is 10W, the time that first power laser irradiates surface, described silica micro-dish chamber is 10 seconds, obtain the micro-ring core chamber of initial condition silica, the power of described second power laser is 7 W, and the time that the second power laser irradiates surface, described initial condition micro-ring core chamber is 15 seconds.
4. 2 micron wave length microlasers of integrated chip as claimed in claim 1, is characterized in that: described micro-nano fiber diameter is 1 micron ~ 2 microns.
5. 2 micron wave length microlasers of integrated chip as claimed in claim 1, is characterized in that: the diameter in the micro-ring core chamber of described silica is 20 microns ~ 1 millimeter.
6. 2 micron wave length microlasers of integrated chip as claimed in claim 1, is characterized in that: the thickness of silicon oxide film described in step (1) is 1 micron ~ 2 microns.
7. a manufacture method for 2 micron wave length microlasers of integrated chip, is characterized in that, comprise following methods:
A, first prepare silicon oxide film with sol-gal process, wherein, the rare earth impurities mixed in sol-gel process is thulium ion and holmium ion, and the concentration ratio of thulium ion and holmium ion is 5-40;
B, prepare the micro-dish of silica with photoetching, hf etching and xenon difluoride etching technics on the surface at described silicon oxide film, the micro-dish of described silica connects silicon chip by silicon post;
C, utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish of described silica, the power of described carbon dioxide laser is 7 ~ 10W, and the time of heating reflow treatment is 25 ~ 35 seconds, and finally, silica micro-dish chamber is melt into the micro-ring core chamber of silica;
D, monomode fiber is drawn into the micro-nano fiber that diameter is 1 micron ~ 2 microns;
E, the micro-nano fiber that steps d obtained, near the micro-ring core chamber of described silica, make coupling therebetween reach best, obtain 2 micron wave length microlasers of integrated chip.
8. the manufacture method of 2 micron wave length microlasers of integrated chip as claimed in claim 7, is characterized in that: the diameter in the micro-ring core chamber of the silica described in step c is 20 microns ~ 1 millimeter.
9. the manufacture method of 2 micron wave length microlasers of integrated chip as claimed in claim 7, it is characterized in that: utilize carbon dioxide laser to carry out heating reflow treatment to the micro-dish of described silica in step c and comprise the following steps: the surperficial 10-15 second of first irradiating described silica micro-dish chamber with the first power laser, obtain the micro-ring core chamber of initial condition silica, then the surperficial 15-20 second in described initial condition micro-ring core chamber is irradiated with the second power laser, finally, the obtained micro-ring core chamber of silica, wherein, the power of the first power laser is greater than the power of the second power laser, the power of the first power laser and the second power laser is 7 ~ 10W.
10. the manufacture method of 2 micron wave length microlasers of integrated chip as claimed in claim 9, it is characterized in that: the power of described first power laser is 10W, the time that first power laser irradiates surface, described silica micro-dish chamber is 10 seconds, obtain the micro-ring core chamber of initial condition silica, the power of described second power laser is 7 W, and the time that the second power laser irradiates surface, described initial condition micro-ring core chamber is 15 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625717.5A CN104466657B (en) | 2014-11-07 | 2014-11-07 | A kind of 2 micron wave length microlasers of integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625717.5A CN104466657B (en) | 2014-11-07 | 2014-11-07 | A kind of 2 micron wave length microlasers of integrated chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104466657A true CN104466657A (en) | 2015-03-25 |
| CN104466657B CN104466657B (en) | 2017-12-01 |
Family
ID=52912267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410625717.5A Active CN104466657B (en) | 2014-11-07 | 2014-11-07 | A kind of 2 micron wave length microlasers of integrated chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104466657B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN106526739A (en) * | 2016-11-02 | 2017-03-22 | 复旦大学 | Method for preparing aerogel film on surface of micro nano fiber |
| CN106744657A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院上海微***与信息技术研究所 | A kind of preparation method of three-dimensional GeSn micro/nano-scales cantilever design |
| CN106921106A (en) * | 2017-04-26 | 2017-07-04 | 中国电子科技集团公司第三十八研究所 | A kind of small-sized Ultra-Low Phase Noise Optical-Electronic Oscillator and its optical microcavity preparation method |
| CN109149365A (en) * | 2018-10-15 | 2019-01-04 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver selenide quantum dot |
| CN109167252A (en) * | 2018-10-15 | 2019-01-08 | 南京邮电大学 | Include micro- disk cavity laser of silver sulfide/vulcanization silver-colored zinc core-shell quanta dots and preparation method thereof |
| CN109167256A (en) * | 2018-10-15 | 2019-01-08 | 南京邮电大学 | Include micro- disk cavity laser of silver telluride/telluride silver-colored zinc core-shell quanta dots and preparation method thereof |
| CN109286130A (en) * | 2018-10-15 | 2019-01-29 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver sulfide quantum dot |
| CN109301692A (en) * | 2018-10-15 | 2019-02-01 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot |
| CN111817126A (en) * | 2019-04-10 | 2020-10-23 | 南京大学 | Micro-ring core device and optical soliton generation system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050169331A1 (en) * | 2004-02-02 | 2005-08-04 | Vahala Kerry J. | Silica sol gel micro-laser on a substrate and method of fabrication |
| CN103001117A (en) * | 2012-12-11 | 2013-03-27 | 南京大学 | Chip integrated silicon oxide microsphere laser |
-
2014
- 2014-11-07 CN CN201410625717.5A patent/CN104466657B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050169331A1 (en) * | 2004-02-02 | 2005-08-04 | Vahala Kerry J. | Silica sol gel micro-laser on a substrate and method of fabrication |
| CN103001117A (en) * | 2012-12-11 | 2013-03-27 | 南京大学 | Chip integrated silicon oxide microsphere laser |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN104868351B (en) * | 2015-04-27 | 2018-08-03 | 清华大学 | A method of adjusting Whispering-gallery-mode microcavity resonant frequency |
| CN106526739A (en) * | 2016-11-02 | 2017-03-22 | 复旦大学 | Method for preparing aerogel film on surface of micro nano fiber |
| CN106526739B (en) * | 2016-11-02 | 2019-10-15 | 复旦大学 | In the method that micro-nano fiber surface prepares aerogel |
| CN106744657A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院上海微***与信息技术研究所 | A kind of preparation method of three-dimensional GeSn micro/nano-scales cantilever design |
| CN106921106A (en) * | 2017-04-26 | 2017-07-04 | 中国电子科技集团公司第三十八研究所 | A kind of small-sized Ultra-Low Phase Noise Optical-Electronic Oscillator and its optical microcavity preparation method |
| CN109149365A (en) * | 2018-10-15 | 2019-01-04 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver selenide quantum dot |
| CN109167252A (en) * | 2018-10-15 | 2019-01-08 | 南京邮电大学 | Include micro- disk cavity laser of silver sulfide/vulcanization silver-colored zinc core-shell quanta dots and preparation method thereof |
| CN109167256A (en) * | 2018-10-15 | 2019-01-08 | 南京邮电大学 | Include micro- disk cavity laser of silver telluride/telluride silver-colored zinc core-shell quanta dots and preparation method thereof |
| CN109286130A (en) * | 2018-10-15 | 2019-01-29 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver sulfide quantum dot |
| CN109301692A (en) * | 2018-10-15 | 2019-02-01 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot |
| CN111817126A (en) * | 2019-04-10 | 2020-10-23 | 南京大学 | Micro-ring core device and optical soliton generation system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104466657B (en) | 2017-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104466657A (en) | Chip-integrated 2-micrometer wavelength micro laser | |
| CN103001117B (en) | Chip integrated silicon oxide microsphere laser | |
| Maurice et al. | High dynamic range temperature point sensor using green fluorescence intensity ratio in erbium-doped silica fiber | |
| CN104934850A (en) | A tunable optical micro-cavity Raman laser and a tunable optical micro-cavity doped laser | |
| Vu et al. | 980nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band | |
| CN104836108A (en) | Broadband saturable absorber, preparation method thereof and laser pulse based on device | |
| CN109768465A (en) | One kind being based on Tm3+The fluoride glass microsphere laser device of doping | |
| Da Silva et al. | Er3+ doped waveguide amplifiers written with femtosecond laser in germanate glasses | |
| McDaniel et al. | CW and passively Q-switched operation of a Ho: YAG waveguide laser | |
| Ju et al. | Diode-pumped tunable single-longitudinal-mode Tm, Ho: YAG twisted-mode laser | |
| CN104112972A (en) | Chalcogenide glass based spherical micro-cavity laser manufacture method | |
| CN102253449B (en) | Construction method of three-dimensional active coupling resonance loop structure with rare earth doped glass as matrix material | |
| Li et al. | Directly Pumped Ho 3+-Doped Microspheres Lasing at $2.0~\mu $ m | |
| Huang et al. | A versatile model for temperature-dependent effects in Tm-doped silica fiber lasers | |
| Paul et al. | Development of nanoengineered thulium-doped fiber laser with low threshold pump power and tunable operating wavelength | |
| Liu et al. | Helium-implanted optical planar waveguides in Nd3+-doped phosphate glass | |
| Shen et al. | Near-infrared carbon-implanted Er 3+/Yb 3+ co-doped phosphate glass waveguides | |
| Mwarania et al. | Neodymium-doped ion-exchanged waveguide lasers in BK-7 glass | |
| CN202616595U (en) | High power broadband amplified spontaneous emission (ASE) light source of 1064 nm wave band | |
| Liu et al. | Oxygen-implanted optical planar waveguides in Er 3+/Yb 3+-codoped silicate glasses for integrated laser generation | |
| Peng et al. | Er 3+-doped tellurite glass microsphere laser: optical properties, coupling scheme, and lasing characteristics | |
| CN103663956A (en) | Method for preparing doubly clad optical fiber preform by means of stacking | |
| Latiff et al. | Dual-Wavelength Holmium-Doped Fiber Laser Pumped by Thulium–Ytterbium Co-Doped Fiber Laser | |
| CN109309338A (en) | The tunable mode-locked optical fiber laser of Gao Zhongying and laser generation method and application | |
| Valles et al. | New characterization technique for femtosecond laser written waveguides in Yb/Er-codoped glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |