CN104465907A - 一种改善p型氮化镓薄膜电学特性的方法 - Google Patents
一种改善p型氮化镓薄膜电学特性的方法 Download PDFInfo
- Publication number
- CN104465907A CN104465907A CN201510018419.4A CN201510018419A CN104465907A CN 104465907 A CN104465907 A CN 104465907A CN 201510018419 A CN201510018419 A CN 201510018419A CN 104465907 A CN104465907 A CN 104465907A
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- CN
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- Prior art keywords
- thin film
- gallium nitride
- gan
- ito thin
- type gallium
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 18
- 238000009616 inductively coupled plasma Methods 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000001939 inductive effect Effects 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001965 increasing effect Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 210000002381 plasma Anatomy 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510018419.4A CN104465907B (zh) | 2015-01-14 | 2015-01-14 | 一种改善p型氮化镓薄膜电学特性的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510018419.4A CN104465907B (zh) | 2015-01-14 | 2015-01-14 | 一种改善p型氮化镓薄膜电学特性的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104465907A true CN104465907A (zh) | 2015-03-25 |
CN104465907B CN104465907B (zh) | 2017-07-04 |
Family
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Family Applications (1)
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CN201510018419.4A Active CN104465907B (zh) | 2015-01-14 | 2015-01-14 | 一种改善p型氮化镓薄膜电学特性的方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104465907B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598224A (zh) * | 2018-05-31 | 2018-09-28 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制作方法及其发光二极管外延片 |
CN108987540A (zh) * | 2018-05-31 | 2018-12-11 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制作方法及其发光二极管外延片 |
CN112750933A (zh) * | 2021-01-26 | 2021-05-04 | 长沙壹纳光电材料有限公司 | 一种led芯片及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060099806A1 (en) * | 2004-11-08 | 2006-05-11 | Samsung Electro-Mechanics Co., Ltd. | Method of forming electrode for compound semiconductor device |
CN101093866A (zh) * | 2006-06-21 | 2007-12-26 | 大连路明科技集团有限公司 | 氮化物半导体发光器件的透明电极及其制法 |
CN102790154A (zh) * | 2012-08-09 | 2012-11-21 | 扬州中科半导体照明有限公司 | 具有ITO表面粗化的GaN基LED芯片的制作方法 |
CN104022200A (zh) * | 2013-02-28 | 2014-09-03 | 山东浪潮华光光电子股份有限公司 | 一种GaN基发光二极管芯片及其制备方法 |
CN104157749A (zh) * | 2014-08-19 | 2014-11-19 | 映瑞光电科技(上海)有限公司 | Ito膜层的制备方法及led芯片的制备方法 |
-
2015
- 2015-01-14 CN CN201510018419.4A patent/CN104465907B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060099806A1 (en) * | 2004-11-08 | 2006-05-11 | Samsung Electro-Mechanics Co., Ltd. | Method of forming electrode for compound semiconductor device |
CN101093866A (zh) * | 2006-06-21 | 2007-12-26 | 大连路明科技集团有限公司 | 氮化物半导体发光器件的透明电极及其制法 |
CN102790154A (zh) * | 2012-08-09 | 2012-11-21 | 扬州中科半导体照明有限公司 | 具有ITO表面粗化的GaN基LED芯片的制作方法 |
CN104022200A (zh) * | 2013-02-28 | 2014-09-03 | 山东浪潮华光光电子股份有限公司 | 一种GaN基发光二极管芯片及其制备方法 |
CN104157749A (zh) * | 2014-08-19 | 2014-11-19 | 映瑞光电科技(上海)有限公司 | Ito膜层的制备方法及led芯片的制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598224A (zh) * | 2018-05-31 | 2018-09-28 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制作方法及其发光二极管外延片 |
CN108987540A (zh) * | 2018-05-31 | 2018-12-11 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制作方法及其发光二极管外延片 |
CN112750933A (zh) * | 2021-01-26 | 2021-05-04 | 长沙壹纳光电材料有限公司 | 一种led芯片及其制作方法 |
Also Published As
Publication number | Publication date |
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CN104465907B (zh) | 2017-07-04 |
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Effective date of registration: 20221205 Address after: 361000 Room 101, No. 159-7, Jinling North Road, Houxi Town, Jimei District, Xiamen City, Fujian Province Patentee after: Etman Semiconductor Technology Co.,Ltd. Address before: Xiamen City, Fujian Province, 361005 South Siming Road No. 422 Patentee before: XIAMEN University |
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Effective date of registration: 20231204 Address after: Room 102, 159-7 Jinling North Road, Houxi Town, Jimei District, Xiamen City, Fujian Province, 361000 Patentee after: Etman (Xiamen) Optoelectronic Technology Co.,Ltd. Address before: 361000 Room 101, No. 159-7, Jinling North Road, Houxi Town, Jimei District, Xiamen City, Fujian Province Patentee before: Etman Semiconductor Technology Co.,Ltd. |
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