CN104465881A - Implementation method for multi-layer metalized structure of solar battery - Google Patents
Implementation method for multi-layer metalized structure of solar battery Download PDFInfo
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- CN104465881A CN104465881A CN201410787673.6A CN201410787673A CN104465881A CN 104465881 A CN104465881 A CN 104465881A CN 201410787673 A CN201410787673 A CN 201410787673A CN 104465881 A CN104465881 A CN 104465881A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 137
- 239000002184 metal Substances 0.000 claims abstract description 137
- 238000007650 screen-printing Methods 0.000 claims description 32
- 238000005245 sintering Methods 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 239000002609 medium Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000007639 printing Methods 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910003087 TiOx Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an implementation method for a multi-layer metalized structure of a solar battery. The method comprises the following steps that (a) a solar battery structure is manufactured until a dielectric film is completed; (b) the metalized structure is manufactured, wherein the step of manufacturing the metalized structure concretely comprises the steps that (b1) firstly, a contact metal layer is manufactured on the dielectric film; (b2) afterwards, a conductive metal layer is manufactured on the contact metal layer, so that the metalized structure is manufactured. According to the implementation method, higher conversion efficiency can be achieved, and meanwhile metalized process and material costs are lowered.
Description
Technical field
The present invention relates to a kind of implementation method of multi-layer metallized structure of solar cell, belong to crystal silicon solar energy battery technical field.
Background technology
At present, silk screen printing is the most frequently used method for metallising of current volume production solar cell in conjunction with metal paste sintering, by printing silver slurry, aluminium paste or silver/aluminium paste, through high-temperature sintering process, realizing the electricity contact of solar cell, electricity conduction, welding the metallization of the function such as interconnected.Usually, printing silver slurry and silver/aluminium paste can form good ohmic contact in n+ type and p+ type doping face respectively, but argent is expensive, causes containing the accounting of silver paste in solar cell manufacturing cost very high, cannot use in a large number; Aluminium paste price is comparatively cheap, and during sintering aluminium paste, a large amount of aluminium atoms permeating, in crystalline silicon, forms p+ type doped layer, usually in P type substrate solar cell, forms back surface field.But use aluminium paste cannot form ohmic contact with n+ type face of adulterating, the high-quality p+ type doping face that also cannot compatible diffuse to form, and volume resistivity is higher, limits the use in structure battery not of the same race.In addition, SiNx, SiO is used widely
2, Al
2o
3, the dielectric film such as TiOx, a-Si carry out surface passivation, the high conversion efficiency of solar cell can be realized.Often resistance is very high to play the dielectric film of passivation, or even insulation, therefore need to use the technology such as laser ablation or mask etching to remove medium partly before metallization, the metal implemented is formed with the functional areas of solar cell and contacts.So both achieve metallization and also ensure higher passivation effect.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art, provides a kind of implementation method of multi-layer metallized structure of solar cell, and it can realize higher conversion efficiency, and reduces metallization process and Material Cost.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: a kind of implementation method of multi-layer metallized structure of solar cell, and the step of the method is as follows:
A () prepares solar battery structure completing to deielectric-coating;
B () prepares metallization structure, concrete steps are as follows:
(b1) first on deielectric-coating, contact metal layer is prepared;
(b2) in contact metal layer, prepare conductive metal layer again, complete the preparation of metallization structure.
Further in order to make solar cell form three-layer metal structure to weld the interconnecting strip of confluxing of solar cell and assembly, also there is step (b3): on conductive metal layer, prepare weld metal layers again in described step (b).
Further, the thickness of described contact metal layer is 10nm ~ 2 μm, and the thickness of conductive metal layer is 5 μm ~ 50 μm, and the thickness of described weld metal layers is 100nm ~ 20 μm.
Further, the preparation method of described contact metal layer, conductive metal layer and weld metal layers is silk screen printing.
Further, the silk screen printing live width of described contact metal layer, conductive metal layer and weld metal layers is 1 μm ~ 200 μm.
Further, the sintering method of described contact metal layer, conductive metal layer and weld metal layers is that gradation is dried, and once sintered, bake out temperature is 100 DEG C to 400 DEG C, and sintering temperature is 500 DEG C to 1000 DEG C.
Further, the sintering method of described contact metal layer, conductive metal layer and weld metal layers is that gradation is dried, and gradation sinters, and bake out temperature is 100 DEG C to 400 DEG C, and sintering temperature is 500 to 1000 DEG C.
Further, silver, aluminium, glass medium, binding agent, solvent and polymer is comprised in the slurry composition of the contact metal layer of silk screen printing, and the mass percent of silver is 70% ~ 95%, the mass percent of aluminium is 0 ~ 30%, all the other are glass medium, binding agent, solvent and polymer, amount to 100%.
Further, aluminium, copper, binding agent, solvent and polymer is comprised in the paste composition of the conductive metal layer of silk screen printing.
Further, silver, tin, indium, nickel, binding agent, solvent and polymer is comprised in the paste composition of the weld metal layers of silk screen printing.
Further, between described step (a) and step (b), also comprise step: deielectric-coating is removed in local, form the opening exposing silicon substrate or doped layer; And in step (b1), make the opening of contact metal layer overwrite media film, contact with silicon substrate or doped layer.
Have employed technique scheme, the present invention has following beneficial effect: realize the conversion efficiency that solar cell is higher, and reduces metallization process and Material Cost.
Accompanying drawing explanation
Fig. 1 is the schematic diagram needing the multi-layer metallized structure of etch media film of the present invention;
Fig. 2 is the schematic diagram not needing the multi-layer metallized structure of etch media film of the present invention;
Fig. 3 is the schematic diagram without the multi-layer metallized structure of weld metal layers of the present invention.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation.
Embodiment one
As shown in Figure 1, a kind of implementation method of multi-layer metallized structure of solar cell, the step of the method is as follows:
A () forms the doped layer 102 of n+ (or p+) on silicon substrate 101, deposition medium film 103 passivated surface.Deielectric-coating is SiNx, SiO
2, Al
2o
3, the material such as TiOx, a-Si, and the individual layer of these materials composition, bilayer or sandwich construction;
B () prepares metallization structure, concrete steps are as follows:
(b1) first on deielectric-coating 103, contact metal layer 104 is prepared;
(b2) in contact metal layer 104, prepare conductive metal layer 105 again, complete the preparation of metallization structure.
Also comprise step between described step (a) and step (b): deielectric-coating 103 is removed in local, form the opening exposing silicon substrate 101 or doped layer 102; And in step (b1), make the opening of contact metal layer 104 overwrite media film 103, contact with silicon substrate 101 or doped layer 102.
Also there is step (b3): on conductive metal layer 105, prepare weld metal layers 106 again in described step (b).
The thickness of contact metal layer 104 is 10nm or 2 μm, and certainly, the thickness of contact metal layer 104 can be selected between 10nm ~ 2 μm;
The thickness of conductive metal layer 105 is 5 μm or 50 μm, and the thickness of certain conductive metal layer 105 also can be selected between 5 μm ~ 50 μm;
The thickness of described weld metal layers 106 is 100nm or 20 μm, and the thickness of certain weld metal layers 106 also can be selected between 100nm ~ 20 μm;
The preparation method of contact metal layer 104, conductive metal layer 105 and weld metal layers 106 is silk screen printing, but is not limited thereto; The silk screen printing live width of described contact metal layer, conductive metal layer and weld metal layers is 1 μm or 200 μm, and certainly, its silk screen printing live width can be selected in 1 μm ~ 200 μm; In screen printing process, the figure of reticulated printing conductive metal layer 105 is whole, or connected figure, and covers contact metal layer 104, and the figure of silk screen printing weld metal layers 106 is the figures being less than conductive metal layer 105.
The sintering method of contact metal layer 104, conductive metal layer 105 and weld metal layers 106 is that gradation is dried, once sintered, bake out temperature is 100 DEG C or 400 DEG C, this bake out temperature can be selected between 100 DEG C ~ 400 DEG C, sintering temperature is 500 DEG C or 1000 DEG C, and this sintering temperature can be selected between 500 DEG C ~ 1000 DEG C.
Silver, aluminium, glass medium, binding agent, solvent and polymer is comprised in the slurry composition of the contact metal layer 104 of silk screen printing, and the mass percent of silver is 70%, the mass percent of aluminium is 25%, and all the other are glass medium, binding agent, solvent and polymer, amounts to 100%;
Aluminium, copper, binding agent, solvent and polymer is comprised in the paste composition of the conductive metal layer 105 of silk screen printing.
Silver, tin, indium, nickel, binding agent, solvent and polymer is comprised in the paste composition of the weld metal layers 106 of silk screen printing.
Embodiment two
As shown in Figure 2, a kind of implementation method of multi-layer metallized structure of solar cell, the step of the method is as follows:
A () forms the doped layer 102 of n+ (or p+) on silicon substrate 101, deposition medium film 103 passivated surface.Deielectric-coating is SiNx, SiO
2, Al
2o
3, the material such as TiOx, a-Si, and the individual layer of these materials composition, bilayer or sandwich construction;
B () prepares metallization structure, concrete steps are as follows:
(b1) first on deielectric-coating 103, contact metal layer 104 is prepared;
(b2) in contact metal layer 104, prepare conductive metal layer 105 again, complete the preparation of metallization structure.
Also there is step (b3): on conductive metal layer 105, prepare weld metal layers 106 again in described step (b).
The thickness of contact metal layer 104 is 10nm or 2 μm, and certainly, the thickness of contact metal layer 104 can be selected between 10nm ~ 2 μm;
The thickness of conductive metal layer 105 is 5 μm or 50 μm, and the thickness of certain conductive metal layer 105 also can be selected between 5 μm ~ 50 μm;
The thickness of described weld metal layers 106 is 100nm or 20 μm, and the thickness of certain weld metal layers 106 also can be selected between 100nm ~ 20 μm;
The preparation method of contact metal layer 104, conductive metal layer 105 and weld metal layers 106 is silk screen printing, but is not limited thereto; The silk screen printing live width of described contact metal layer, conductive metal layer and weld metal layers is 1 μm or 200 μm, and certainly, its silk screen printing live width can be selected in 1 μm ~ 200 μm; In screen printing process, the figure of reticulated printing conductive metal layer 105 is whole, or connected figure, and covers contact metal layer 104, and the figure of silk screen printing weld metal layers 106 is the figures being less than conductive metal layer 105.
The sintering method of contact metal layer 104, conductive metal layer 105 and weld metal layers 106 is that gradation is dried, once sintered, bake out temperature is 100 DEG C or 400 DEG C, this bake out temperature can be selected between 100 DEG C ~ 400 DEG C, sintering temperature is 500 DEG C or 1000 DEG C, and this sintering temperature can be selected between 500 DEG C ~ 1000 DEG C; Certainly be also: the sintering method of contact metal layer 104, conductive metal layer 105 and weld metal layers 106 is that gradation is dried, and gradation sinters, and bake out temperature is 100 DEG C to 400 DEG C, and sintering temperature is 500 to 1000 DEG C.
Silver, aluminium, glass medium, binding agent, solvent and polymer is comprised in the slurry composition of the contact metal layer 104 of silk screen printing, and the mass percent of silver is 95%, the mass percent of aluminium is 3%, and all the other are glass medium, binding agent, solvent and polymer, amounts to 100%.
Aluminium, copper, binding agent, solvent and polymer is comprised in the paste composition of the conductive metal layer 105 of silk screen printing.
Silver, tin, indium, nickel, binding agent, solvent and polymer is comprised in the paste composition of the weld metal layers 106 of silk screen printing.
Embodiment three
As shown in Figure 3, a kind of implementation method of multi-layer metallized structure of solar cell, the step of the method is as follows:
A () forms the doped layer 102 of n+ (or p+) on silicon substrate 101, deposition medium film 103 passivated surface.Deielectric-coating is SiNx, SiO
2, Al
2o
3, the material such as TiOx, a-Si, and the individual layer of these materials composition, bilayer or sandwich construction;
B () prepares metallization structure, concrete steps are as follows:
(b1) first on deielectric-coating 103, contact metal layer 104 is prepared;
(b2) in contact metal layer 104, prepare conductive metal layer 105 again, complete the preparation of metallization structure.
Also step is comprised: use laser ablation or mask etching technology local to remove deielectric-coating 103, form the opening exposing silicon substrate 101 or doped layer 102 between described step (a) and step (b); And in step (b1), make the opening of contact metal layer 104 overwrite media film 103, contact with silicon substrate 101 or doped layer 102.
The thickness of contact metal layer 104 is 10nm or 2 μm, and certainly, the thickness of contact metal layer 104 can be selected between 10nm ~ 2 μm;
The thickness of conductive metal layer 105 is 5 μm or 50 μm, and the thickness of certain conductive metal layer 105 also can be selected between 5 μm ~ 50 μm;
The preparation method of contact metal layer 104 and conductive metal layer 105 is silk screen printing, but is not limited thereto; The silk screen printing live width of described contact metal layer and conductive metal layer is 1 μm or 200 μm, and certainly, its silk screen printing live width can be selected in 1 μm ~ 200 μm; In screen printing process, the figure of reticulated printing conductive metal layer 105 is whole, or connected figure, and covers contact metal layer 104.
The sintering method of contact metal layer 104 and conductive metal layer 105 is that gradation is dried, once sintered, bake out temperature is 100 DEG C or 400 DEG C, and this bake out temperature can be selected between 100 DEG C ~ 400 DEG C, sintering temperature is 500 DEG C or 1000 DEG C, and this sintering temperature can be selected between 500 DEG C ~ 1000 DEG C; Silver, aluminium, glass medium, binding agent, solvent and polymer is comprised in the slurry composition of the contact metal layer 104 of silk screen printing, and the mass percent of silver is 80%, the mass percent of aluminium is 15%, and all the other are glass medium, binding agent, solvent and polymer, amounts to 100%.
Aluminium, copper, binding agent, solvent and polymer is comprised in the paste composition of the conductive metal layer 105 of silk screen printing.
The present invention can apply to the manufacture of various structures solar cell, comprising: P type back of the body passivating structure, N-type back of the body passivating structure, N-type bilateral structure, HIT, IBC etc.
Operation principle of the present invention is as follows:
The present invention is directed to the sandwich construction that the contact of solar cell electricity, electricity conduction, interconnected welding etc. require to implement different metal, use thinner contact metal layer 104 to form good contacting with n+ with p+ type, and reduce cost of sizing agent; Use thicker more cheap metal (aluminium, copper etc.) to prepare conductive metal layer 105 and form good conduction in contact metal layer 104, and in sintering process, the metal of these high diffusivity coefficients cannot diffuse to n+ and p+ doped region due to the stop of contact metal layer, can not affect solar cell properties; Welding metal (tin, indium etc.) is used to form weld metal layers 106, to weld the interconnecting strip of confluxing of solar cell and assembly.This structure and method are expected to realize higher conversion efficiency, and reduce metallization process and Material Cost.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention solves are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an implementation method for the multi-layer metallized structure of solar cell, is characterized in that the step of the method is as follows:
A () prepares solar battery structure completing to deielectric-coating (103);
B () prepares metallization structure, concrete steps are as follows:
(b1) first on deielectric-coating (103), contact metal layer (104) is prepared;
(b2) in contact metal layer (104), prepare conductive metal layer (105) again, complete the preparation of metallization structure.
2. the implementation method of the multi-layer metallized structure of solar cell according to claim 1, is characterized in that: also have step (b3) in described step (b): on conductive metal layer (105), prepare weld metal layers (106) again.
3. the implementation method of the multi-layer metallized structure of solar cell according to claim 2, it is characterized in that: the thickness of described contact metal layer (104) is 10nm ~ 2 μm, the thickness of conductive metal layer (105) is 5 μm ~ 50 μm, and the thickness of described weld metal layers (106) is 100nm ~ 20 μm.
4. the implementation method of the multi-layer metallized structure of solar cell according to claim 2, is characterized in that: the preparation method of described contact metal layer (104), conductive metal layer (105) and weld metal layers (106) is silk screen printing.
5. the implementation method of the multi-layer metallized structure of solar cell according to claim 4, it is characterized in that: the sintering method of described contact metal layer (104), conductive metal layer (105) and weld metal layers (106) is that gradation is dried, once sintered, bake out temperature is 100 DEG C to 400 DEG C, and sintering temperature is 500 DEG C to 1000 DEG C.
6. the implementation method of the multi-layer metallized structure of solar cell according to claim 4, it is characterized in that: the sintering method of described contact metal layer (104), conductive metal layer (105) and weld metal layers (106) is that gradation is dried, gradation sinters, bake out temperature is 100 DEG C to 400 DEG C, and sintering temperature is 500 to 1000 DEG C.
7. the implementation method of the multi-layer metallized structure of solar cell according to claim 4, it is characterized in that: in the slurry composition of the contact metal layer (104) of silk screen printing, comprise silver, aluminium, glass medium, binding agent, solvent and polymer, and the mass percent of silver is 70% ~ 95%, the mass percent of aluminium is 0 ~ 30%, all the other are glass medium, binding agent, solvent and polymer, amount to 100%.
8. the implementation method of the multi-layer metallized structure of solar cell according to claim 4, is characterized in that: comprise aluminium, copper, binding agent, solvent and polymer in the paste composition of the conductive metal layer (105) of silk screen printing.
9. the implementation method of the multi-layer metallized structure of solar cell according to claim 4, is characterized in that: comprise silver, tin, indium, nickel, binding agent, solvent and polymer in the paste composition of the weld metal layers (106) of silk screen printing.
10. the implementation method of the multi-layer metallized structure of solar cell according to claim 1, it is characterized in that: between described step (a) and step (b), also comprise step: deielectric-coating (103) is removed in local, form the opening exposing silicon substrate (101) or doped layer (102); And in step (b1), make the opening of contact metal layer (104) overwrite media film (103), contact with silicon substrate (101) or doped layer (102).
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408587A (en) * | 2015-03-20 | 2017-11-28 | 材料概念有限公司 | Solar battery apparatus and its manufacture method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050022862A1 (en) * | 2003-08-01 | 2005-02-03 | Cudzinovic Michael J. | Methods and apparatus for fabricating solar cells |
| CN101465391A (en) * | 2007-12-21 | 2009-06-24 | 帕洛阿尔托研究中心公司 | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
| CN101506992A (en) * | 2006-08-09 | 2009-08-12 | 信越半导体股份有限公司 | Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell |
-
2014
- 2014-12-17 CN CN201410787673.6A patent/CN104465881A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050022862A1 (en) * | 2003-08-01 | 2005-02-03 | Cudzinovic Michael J. | Methods and apparatus for fabricating solar cells |
| CN101506992A (en) * | 2006-08-09 | 2009-08-12 | 信越半导体股份有限公司 | Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell |
| CN101465391A (en) * | 2007-12-21 | 2009-06-24 | 帕洛阿尔托研究中心公司 | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408587A (en) * | 2015-03-20 | 2017-11-28 | 材料概念有限公司 | Solar battery apparatus and its manufacture method |
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Application publication date: 20150325 |