CN104465440A - Method for monitoring growth defects of in-situ steam growth gate oxide film - Google Patents
Method for monitoring growth defects of in-situ steam growth gate oxide film Download PDFInfo
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- CN104465440A CN104465440A CN201410697355.0A CN201410697355A CN104465440A CN 104465440 A CN104465440 A CN 104465440A CN 201410697355 A CN201410697355 A CN 201410697355A CN 104465440 A CN104465440 A CN 104465440A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a method for monitoring growth defects of an in-situ steam growth gate oxide film. The method includes the steps of providing a silicon substrate; preparing the gate oxide film formed on a growth area of the silicon substrate; stopping preparing the gate oxide film at a preset moment; scanning the silicon substrate, and positioning the area, where the gate oxide film is formed, on the silicon substrate and the area, where the gate oxide film is not formed, on the silicon substrate; carrying out slice analysis on the area where the gate oxide film is formed and the area where the gate oxide film is not formed to obtain the result for monitoring whether the growth defects of the gate oxide film exist or not. According to the method, the area where the gate oxide film is not formed and the area where the gate oxide film is formed are distinguished through the height difference by means of bright field scanning, then slice analysis by a transmission electron microscope is carried out, and therefore the result for monitoring whether the growth defects of the gate oxide film exist or not is obtained. By means of the method for monitoring the growth defects of the in-situ steam growth gate oxide film, the growth defect found period can be effectively shortened, and therefore the device yield can be improved.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of method of growth defect of monitoring original position steam growth (ISSG) gate oxidation films.
Background technology
Along with the continuous micro evolution of the critical size of semiconductor device, at 40 nanometer technologies and following, the gate oxidation films B thickness General Requirements of logical device is less than 3 nanometers (as shown in Figure 1).The oxidation technology that this thin gate oxide film B is grown by original position steam grows on silicon substrate A surface.If in gate oxidation films B growth course, on growth district silicon substrate A, defectiveness or foreign matter stop, can cause the shaping failure of gate oxidation films.The situation of this gate oxidation films disappearance, directly can cause component failure, cause the yield of device impaired.Also do not have easily means efficiently can monitor the situation of this gate oxidation films disappearance at present, usually only have the technique final stage (after a wheat harvesting period) to test yield to find, the time of discovery is excessively late.
Chinese patent (CN101996879A) discloses a kind of method removing contaminant particle in barrier layer and dielectric layer, light field scan method BFI is adopted to detect that the method comprises doped with after the wafer of contaminant particle in the first barrier layer, first medium layer, the second barrier layer, second dielectric layer or the 3rd barrier layer: to adopt chemical mechanical milling tech CMP to remove the 3rd barrier layer, second dielectric layer, the second barrier layer, first medium layer and the first barrier layer successively.
This patent is scanned by light field and chemical mechanical milling tech removes contaminant particle in barrier layer and dielectric layer, to reach the object of the production cost reducing semiconductor device.But do not solve in gate oxidation films growth course, whether monitoring gate oxidation films exists the problem of disappearance.
Chinese patent (CN103295910A) provides the manufacture method of the semiconductor device with longitudinal type groove MOSFET, the semiconductor device of described longitudinal type groove MOSFET suppresses the increase of conducting resistance with can not reducing the long-term reliability of grid oxidation film, and that also improves between drain electrode and grid is withstand voltage simultaneously.In the longitudinal type MOS transistor with trench-gate, by making the distance of the N-type high concentration embedding layer under gate electrode to gate electrode longer than existing structure, and using therebetween as P type trench bottom surfaces lower zone (5), thus when high voltage being applied to drain region and 0V being applied to gate electrode, trench bottom surfaces lower zone (5) exhausting, thereby, it is possible to improve the withstand voltage of cut-off state.
The longitudinal type MOSFET of the trenched gate configuration of this patent suppresses the increase of conducting resistance with can not reducing the long-term reliability of grid oxidation film, simultaneously improve drain electrode and grid between withstand voltage.But do not solve in gate oxidation films growth course, whether monitoring gate oxidation films exists the problem of disappearance.
Summary of the invention
For above-mentioned Problems existing, the present invention discloses a kind of method of monitoring the growth defect of original position steam growth gate oxidation films, and to overcome in gate oxidation films growth course, whether monitoring gate oxidation films exists the problem of disappearance.
Concrete technical scheme is as follows:
Monitor a method for the growth defect of original position steam growth gate oxidation films, comprise the steps:
One silicon substrate is provided;
Prepare the growth district that a gate oxidation films is formed at described silicon substrate;
The described gate oxidation films of preparation is stopped at predetermined time;
Scan described silicon substrate, the region that described silicon substrate is formed gate oxidation films and the region that do not form gate oxidation films are positioned;
Slice analysis is carried out, to obtain the monitoring result whether described gate oxidation films exists growth defect with the region not forming gate oxidation films to the region forming gate oxidation films.
Preferably, the oxidation technology of original position steam growth is adopted to prepare described gate oxidation films.
Preferably, the scope of described predetermined time is: 15s ~ 25s.
Preferably, described in described predetermined time, the scope of the thickness of gate oxidation films growth is: 10 nanometer to 20 nanometers.
Preferably, the mode of light field scanning is adopted to scan described silicon substrate.
Preferably, adopt transmission electron microscope to the region forming gate oxidation films with do not form gate oxidation films region and carry out slice analysis.
Preferably, to the detailed process of described slice analysis be:
Adopt transmission electron microscope to obtain the image of described section, judge whether there is membrane structure bright in vain in described image, if there is membrane structure bright in vain, then described gate oxidation films is normal; If there is not membrane structure bright in vain, then there is growth defect in described gate oxidation films.
The beneficial effect of technique scheme:
The present invention adopts light field scanning to utilize difference in height to distinguish in the region in the region and normal growth gate oxidation films that do not grow gate oxidation films, then carries out the slice analysis of transmission electron microscope, thus obtains the monitoring result whether gate oxidation films exists growth defect.The method adopting monitoring original position steam of the present invention to grow the growth defect of gate oxidation films effectively can shorten growth defect and find the cycle, thus improves yield of devices.
Accompanying drawing explanation
Fig. 1 is existing gate oxidation films growth defect figure;
Fig. 2 is the present invention stops preparing gate oxidation films gate oxidation films growth defect figure at predetermined time.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all belongs to the scope of protection of the invention.
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
Monitor a method for the growth defect of original position steam growth gate oxidation films, comprise the steps:
One silicon substrate is provided;
Prepare the growth district that a gate oxidation films is formed at silicon substrate;
Stop preparing gate oxidation films at predetermined time;
Scanning silicon substrate, positions the region forming gate oxidation films on a silicon substrate and the region that do not form gate oxidation films;
Slice analysis is carried out, to obtain the monitoring result whether gate oxidation films exists growth defect with the region not forming gate oxidation films to the region forming gate oxidation films.
In the present embodiment, the method is mainly used in the technique of 28nm ~ 45nm, by utilizing difference in height to distinguish in the region in the region and normal growth gate oxidation films that do not grow gate oxidation films, then carry out slice analysis, thus obtain the monitoring result whether gate oxidation films exists growth defect.The method adopting the present invention to monitor the growth defect of original position steam growth gate oxidation films effectively can shorten growth defect and find the cycle, thus improves yield of devices.
In a preferred embodiment, the oxidation technology of original position steam growth is adopted to prepare gate oxidation films.
The growing principle of original position steam growth technique is in the present embodiment: in low pressure volumes, pass into oxygen and hydrogen, and two kinds of gases produce in surface of silicon and fire reaction, generate the gas-phase activity free radical being rich in oxonium ion.Gas-phase activity free radical carries out Strong oxdiative reaction after entering silicon substrate, generates uniform, fully oxidized and interface silica dioxide medium film (gate oxidation films) clearly.If in gate oxidation films growth course, on the silicon substrate of growth district, defectiveness or foreign matter stop, then living radical can not enter silicon crystalline structure smoothly and carries out oxidation, thus causes the shaping failure of deielectric-coating.Therefore there will be the growth defect of gate oxidation films.
As shown in Figure 2, in a preferred embodiment, the approximate range of predetermined time is between 15s ~ 25s, in the scope of predetermined time, the thickness approximate range of gate oxidation films B growth is between 10 nanometer to 20 nanometers, in order to increase the region forming gate oxidation films and the difference in height do not formed between gate oxidation films region.
In a preferred embodiment, the mode of light field scanning is adopted to scan silicon substrate, the region forming gate oxidation films is on a silicon substrate positioned with the region not forming gate oxidation films, thus make a distinction not forming gate oxidation films region according to difference in height with the region forming gate oxidation films, to obtain defect coordinate accurately, reach the object of quick position defect.Thus it is lepthymenia to solve existing gate oxidation, light field scanning cannot catch the problem of defect coordinate accurately.
In a preferred embodiment, adopt transmission electron microscope (transmission electronmicroscopy, TEM) to the region forming gate oxidation films with do not form gate oxidation films region and carry out slice analysis.
Further, to the detailed process of slice analysis be:
Adopt transmission electron microscope to obtain the image of section, judge whether there is membrane structure bright in vain in image, if there is membrane structure bright in vain, then gate oxidation films is normal; If there is not membrane structure bright in vain, then there is growth defect in gate oxidation films.
As shown in Figure 2, in the present embodiment, silicon substrate A is carried out the original position steam growth of gate oxidation films, growth time is 15s ~ 25s, makes the grown in thickness of gate oxidation films B to 10nm ~ 20nm; Carry out light field scanning, utilize difference in height to distinguish in the region in the region and normal growth gate oxidation films that do not grow gate oxidation films; Then carry out to the region forming gate oxidation films B with do not form gate oxidation films region and carry out slice analysis, adopt high-precision transmission electron microscope to observe forming defect image at once after gate oxidation films is shaping, to monitor technological process.Whether have disappearance according to image viewing gate oxidation films, gate oxidation films is brighter more in vain than silicon substrate in TEM picture, can obviously tell.If do not see the membrane structure of Bai Liang, then illustrate and do not grow.
The foregoing is only preferred embodiment of the present invention; not thereby embodiments of the present invention and protection range is limited; to those skilled in the art; should recognize and all should be included in the scheme that equivalent replacement done by all utilizations specification of the present invention and diagramatic content and apparent change obtain in protection scope of the present invention.
Claims (7)
1. monitor a method for the growth defect of original position steam growth gate oxidation films, it is characterized in that, comprise the steps:
One silicon substrate is provided;
Prepare the growth district that a gate oxidation films is formed at described silicon substrate;
The described gate oxidation films of preparation is stopped at predetermined time;
Scan described silicon substrate, the region that described silicon substrate is formed gate oxidation films and the region that do not form gate oxidation films are positioned;
Slice analysis is carried out, to obtain the monitoring result whether described gate oxidation films exists growth defect with the region not forming gate oxidation films to the region forming gate oxidation films.
2. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 1, it is characterized in that, adopt the oxidation technology of original position steam growth to prepare described gate oxidation films.
3. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 1, it is characterized in that, the scope of described predetermined time is: 15s ~ 25s.
4. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 1, it is characterized in that, described in described predetermined time, the scope of the thickness of gate oxidation films growth is: 10 nanometer to 20 nanometers.
5. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 1, it is characterized in that, adopt the mode of light field scanning to scan described silicon substrate.
6. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 1, it is characterized in that, adopt transmission electron microscope to carry out slice analysis to the region forming gate oxidation films with the region not forming gate oxidation films.
7. monitor the method for the growth defect of original position steam growth gate oxidation films as claimed in claim 6, it is characterized in that, to the detailed process of described slice analysis be:
Adopt transmission electron microscope to obtain the image of described section, judge whether there is membrane structure bright in vain in described image, if there is membrane structure bright in vain, then described gate oxidation films is normal; If there is not membrane structure bright in vain, then there is growth defect in described gate oxidation films.
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| CN201410697355.0A CN104465440A (en) | 2014-11-26 | 2014-11-26 | Method for monitoring growth defects of in-situ steam growth gate oxide film |
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| CN201410697355.0A CN104465440A (en) | 2014-11-26 | 2014-11-26 | Method for monitoring growth defects of in-situ steam growth gate oxide film |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010110885A (en) * | 2000-06-09 | 2001-12-15 | 박병국 | Method for measuring thickness of thin film |
| CN101572230A (en) * | 2008-04-30 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Method for improving thickness consistency of oxide layer on side wall of grid electrode and method for manufacturing grid electrode |
| JP2010016078A (en) * | 2008-07-02 | 2010-01-21 | Shin Etsu Handotai Co Ltd | Silicon monocrystal wafer, method for manufacturing the silicon monocrystal wafer and method for evaluating the silicon monocrystal wafer |
| CN102427045A (en) * | 2011-11-02 | 2012-04-25 | 上海宏力半导体制造有限公司 | Method for detecting in-situ water vapour generation process in real time |
| CN103890951A (en) * | 2011-11-16 | 2014-06-25 | 住友电气工业株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
-
2014
- 2014-11-26 CN CN201410697355.0A patent/CN104465440A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010110885A (en) * | 2000-06-09 | 2001-12-15 | 박병국 | Method for measuring thickness of thin film |
| CN101572230A (en) * | 2008-04-30 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Method for improving thickness consistency of oxide layer on side wall of grid electrode and method for manufacturing grid electrode |
| JP2010016078A (en) * | 2008-07-02 | 2010-01-21 | Shin Etsu Handotai Co Ltd | Silicon monocrystal wafer, method for manufacturing the silicon monocrystal wafer and method for evaluating the silicon monocrystal wafer |
| CN102427045A (en) * | 2011-11-02 | 2012-04-25 | 上海宏力半导体制造有限公司 | Method for detecting in-situ water vapour generation process in real time |
| CN103890951A (en) * | 2011-11-16 | 2014-06-25 | 住友电气工业株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
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Application publication date: 20150325 |
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