CN104425725A - Organic electroluminescent device and preparation method thereof - Google Patents

Organic electroluminescent device and preparation method thereof Download PDF

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Publication number
CN104425725A
CN104425725A CN201310370321.6A CN201310370321A CN104425725A CN 104425725 A CN104425725 A CN 104425725A CN 201310370321 A CN201310370321 A CN 201310370321A CN 104425725 A CN104425725 A CN 104425725A
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layer
organic electroluminescence
electroluminescence device
composite cathode
evaporation
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周明杰
黄辉
钟铁涛
王平
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Priority to CN201310370321.6A priority Critical patent/CN104425725A/en
Publication of CN104425725A publication Critical patent/CN104425725A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an organic electroluminescent device, including a conductive anode substrate, a hole injection layer, a hole transport layer, a luminous layer, an electron transport layer, an electron injection layer and a composite cathode which are stacked in sequence. The material of the composite cathode is a mixture of low work function metal, ferric salt and passivation material. According to the organic electroluminescent device, the composite cathode whose material is the mixture of low work function metal, ferric salt and metal passivation material is prepared on the electron injection layer, the light extraction efficiency is improved, the work function of the low work function metal is relatively low, thereby facilitating electron injection, and improving electron injection efficiency, at the same time, light can be scattered, emitted light is reflected back to the bottom to be emitted, and the light extraction efficiency is improved. Compared with a conventional organic electroluminescent device, the light extraction efficiency of the organic electroluminescent device provided by the invention is relatively high. The invention also discloses a preparation method of the abovementioned organic electroluminescent device.

Description

Organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
In traditional luminescent device, the light of device inside only has about 18% can be transmitted into outside to go, and other part can consume at device exterior with other forms, (as the specific refractivity between glass and ITO, glass refraction is 1.5, ITO is 1.8 to there is the difference of refractive index between interface, light arrives glass from ITO, will total reflection be there is), cause the loss of total reflection, thus cause overall light extraction efficiency lower.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of light extraction efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprise stack gradually conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and composite cathode;
The material of described composite cathode is the mixture of low workfunction metal, molysite and passivating material, and described low workfunction metal is Mg, Sr, Ca or Yb, and described molysite is FeCl 3, FeBr 3or Fe 2s 3, described passivating material is SiO 2, Al 2o 3, NiO or CuO.
In one embodiment, the mass ratio of described low workfunction metal, described molysite and described passivating material is 2: 1: 1 ~ 8: 2: 1.
In one embodiment, the thickness of described composite cathode is 100nm ~ 400nm.
In one embodiment, described conductive anode substrate is indium tin oxide glass, aluminium zinc oxide glass or indium-zinc oxide glass.
In one embodiment, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4,4'-two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl or oxine aluminium (Alq3);
The thickness of described luminescent layer is 5nm ~ 40nm.
A preparation method for organic electroluminescence device, comprises the following steps:
Conductive anode substrate is provided;
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is prepared on the surface of described conductive anode substrate successively evaporation; And
Prepare composite cathode at the surface electronic bundle evaporation of described electron injecting layer, the material of described composite cathode is the mixture of low workfunction metal, molysite and passivating material, and described low workfunction metal is Mg, Sr, Ca or Yb, and described molysite is FeCl 3, FeBr 3or Fe 2s 3, described passivating material is SiO 2, Al 2o 3, NiO or CuO.
In one embodiment, the mass ratio of described low workfunction metal, described molysite and described passivating material is 2: 1: 1 ~ 8: 2: 1;
The thickness of described composite cathode is 100nm ~ 400nm.
In one embodiment, before the surperficial evaporation being also included in described conductive anode substrate prepares described hole injection layer, carry out after photoetching cuts out, successively with the operation of liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min to described conductive anode substrate.
In one embodiment, the described surface in described conductive anode substrate successively evaporation is prepared in the step of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and operating pressure is 2 × 10 -3pa ~ 5 × 10 -5pa, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
In one embodiment, the described surface electronic bundle evaporation at described negative electrode is prepared in the step of composite cathode, and the energy density of described electron beam evaporation plating is 10W/cm 2~ l00W/cm 2.
This organic electroluminescence device, by preparing the composite cathode raising light extraction efficiency that material is the mixture of low workfunction metal, molysite and metal passivation material on electron injecting layer, low workfunction metal work function is lower, be conducive to electron injection, improve the injection efficiency of electronics, meanwhile, scattering can be carried out to light, make the light of outgoing reflect back into bottom outlet, improve light extraction efficiency.Relative to traditional organic electroluminescence device, the light extraction efficiency of this organic electroluminescence device is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the flow chart of the preparation method of the organic electroluminescence device of an execution mode;
Fig. 3 is brightness and the luminous efficiency graph of a relation of organic electroluminescence device prepared by embodiment 1.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar improvement when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Refer to Fig. 1, the organic electroluminescence device of an execution mode comprise stack gradually conductive anode substrate 10, hole injection layer 20, hole transmission layer 30, luminescent layer 40, electron transfer layer 50, electron injecting layer 60 and composite cathode 70.
Conductive anode substrate 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
The material of hole injection layer 20 is molybdenum trioxide (MoO 3), tungstic acid (WO 3) or vanadic oxide (V 2o 5), thickness is 20 ~ 80nm.Preferably, the material of hole injection layer 20 is MoO 3, hole injection layer 20 thickness is 40nm.
The material of hole transmission layer 30 is 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20 ~ 60nm.Preferably, the material of hole transmission layer 30 is TCTA, and the thickness of hole transmission layer 30 is 50nm.
The material of luminescent layer 40 is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl (BCzVBi) the goods oxine aluminium (Alq of 4'- 3), thickness is 5 ~ 40nm.Preferably, the material of luminescent layer 40 is Alq 3, the thickness of luminescent layer 40 is 11nm.
The material of electron transfer layer 50 is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), and thickness is 40 ~ 300nm.Preferably, the material of electron transfer layer 50 is TAZ, and the thickness of electron transfer layer 50 is 220nm.
The material of electron injecting layer 60 is cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) or lithium fluoride (LiF), thickness is 0.5 ~ 10nm.Preferably, the material of electron injecting layer 60 is LiF, and the thickness of electron injecting layer 60 is 2nm.
The material of composite cathode 70 is the mixture of low workfunction metal, molysite and passivating material, and the thickness of composite cathode 70 is 100nm ~ 400nm.。
The metal of low workfunction metal to be work function be-2eV ~-3.5eV, concrete can be magnesium (Mg), strontium (Sr), calcium (Ca) or ytterbium (Yb).
Molysite is iron chloride (FeCl 3), ferric bromide (FeBr 3) or iron sulfide (Fe 2s 3).
Passivating material is silicon dioxide (SiO 2), aluminium oxide (Al 2o 3), nickel oxide (NiO) or cupric oxide (CuO).
The doping mass ratio of low workfunction metal, molysite and metal passivation material is 2:1:1 ~ 8:2:1.
This organic electroluminescence device, by preparing on electron injecting layer 60, material is low workfunction metal, the composite cathode 70 of the mixture of molysite and metal passivation material improves light extraction efficiency, low workfunction metal work function is lower, be conducive to electron injection, improve the injection efficiency of electronics, meanwhile, scattering can be carried out to light, make the light of outgoing reflect back into bottom outlet, improve light extraction efficiency.
Molysite fusing point is lower, easy evaporation, only need a small amount of interpolation can improve the HOMO energy level of composite cathode 70, the HOMO energy level of composite cathode 70 is improved, can traverse to negative electrode and electron recombination cancellation by blocking hole, and the free electron of molysite is more, can improve carrier concentration, thus improve the transmission rate of electronics, the conductivity of device can be improved simultaneously.Passivating material source is simple, and cost is lower, and passivating material effectively can improve the stability of device, and starvation and steam enter into device.
Be appreciated that in this organic electroluminescence device and also can other functional layers be set as required.
Please refer to Fig. 2, the preparation method of above-mentioned organic electroluminescence device, it comprises the following steps:
Step S10, provide conductive anode substrate 10.
Conductive anode substrate 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
Step S20, prepare hole injection layer 20, hole transmission layer 30, luminescent layer 40, electron transfer layer 50 and electron injecting layer 60 on the surface of conductive anode substrate 10 successively evaporation.
Before the surperficial evaporation of conductive anode substrate 10 prepares hole injection layer 20, also comprise following operation: carry out after photoetching cuts out, successively with the operation of liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min to conductive anode substrate 10.
In step S20, operating pressure is 2 × 10 -3pa ~ 5 × 10 -5pa, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
The material of hole injection layer 20 is molybdenum trioxide (MoO 3), tungstic acid (WO 3) or vanadic oxide (V 2o 5), thickness is 20 ~ 80nm.Preferably, the material of hole injection layer 20 is MoO 3, hole injection layer 20 thickness is 40nm.
The material of hole transmission layer 30 is 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20 ~ 60nm.Preferably, the material of hole transmission layer 30 is TCTA, and the thickness of hole transmission layer 30 is 50nm.
The material of luminescent layer 40 is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl (BCzVBi) the goods oxine aluminium (Alq of 4'- 3), thickness is 5 ~ 40nm.Preferably, the material of luminescent layer 40 is Alq 3, the thickness of luminescent layer 40 is 11nm.
The material of electron transfer layer 50 is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), and thickness is 40 ~ 300nm.Preferably, the material of electron transfer layer 50 is TAZ, and the thickness of electron transfer layer 50 is 220nm.
The material of electron injecting layer 60 is cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) or lithium fluoride (LiF), thickness is 0.5 ~ 10nm.Preferably, the material of electron injecting layer 60 is LiF, and the thickness of electron injecting layer 60 is 2nm.
Step S30, prepare composite cathode 70 at the surface electronic bundle evaporation of electron injecting layer 60.
In step S30, the energy density of electron beam evaporation plating is 10W/cm 2~ l00W/cm 2.
The material of composite cathode 70 is the mixture of low workfunction metal, molysite and passivating material, and the thickness of composite cathode 70 is 100nm ~ 400nm.。
The metal of low workfunction metal to be work function be-2eV ~-3.5eV, concrete can be magnesium (Mg), strontium (Sr), calcium (Ca) or ytterbium (Yb).
Molysite is iron chloride (FeCl 3), ferric bromide (FeBr 3) or iron sulfide (Fe 2s 3).
Passivating material is silicon dioxide (SiO 2), aluminium oxide (Al 2o 3), nickel oxide (NiO) or cupric oxide (CuO).
The doping mass ratio of low workfunction metal, molysite and metal passivation material is 2:1:1 ~ 8:2:1.
This organic electroluminescence device preparation method, preparation technology is simple; The organic electroluminescence device of preparation, by preparing on electron injecting layer 60, material is low workfunction metal, the composite cathode 70 of the mixture of molysite and metal passivation material improves light extraction efficiency, low workfunction metal work function is lower, be conducive to electron injection, improve the injection efficiency of electronics, meanwhile, scattering can be carried out to light, make the light of outgoing reflect back into bottom outlet, improve light extraction efficiency.
Molysite fusing point is lower, easy evaporation, only need a small amount of interpolation can improve the HOMO energy level of composite cathode 70, the HOMO energy level of composite cathode 70 is improved, can traverse to negative electrode and electron recombination cancellation by blocking hole, and the free electron of molysite is more, can improve carrier concentration, thus improve the transmission rate of electronics, the conductivity of device can be improved simultaneously.Passivating material source is simple, and cost is lower, and passivating material effectively can improve the stability of device, and starvation and steam enter into device.
Below in conjunction with specific embodiment, the preparation method to organic electroluminescence device is described in detail.
The embodiment of the present invention and the preparation used by comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 of Keithley company of the U.S. tests electric property, the CS-100A colorimeter test brightness of Japanese Konica Minolta company and colourity.
Embodiment 1
It is ito glass/MoO that the present embodiment prepares structure 3/ TCTA/Alq 3/ TAZ/LiF/Ca:FeCl 3: Al 2o 3organic electroluminescence device.Wherein, "/" represents stacked, and ": " represents mixing.
There is provided ito glass as conductive anode substrate, and this ito glass is carried out after photoetching cuts out, remove contamination with liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min successively.
Be 8 × 10 in operating pressure -5pa, the evaporation rate of organic material is 0.2nm/s, and the evaporation rate of metal and metallic compound is under the condition of 3nm/s, prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on the surface of ito glass successively evaporation.The material of hole injection layer is MoO 3, thickness is 40nm.The material of hole transmission layer is TCTA, and thickness is 50nm.The material of luminescent layer is Alq 3, thickness is 11nm.The material of electron transfer layer is TAZ, and thickness is 220nm.The material of electron injecting layer is LiF, and thickness is 2nm.
Be 20W/cm in electron beam energy 2condition under, prepare composite cathode at electron injecting layer surface electronic bundle evaporation.The material of composite cathode to be mass ratio be 4: 1.5: 1 Ca, FeCl 3and Al 2o 3mixture, thickness is 200nm.
Refer to Fig. 3, structure prepared by the organic electroluminescence device (curve 1) being depicted as in embodiment 1 preparation and comparative example is ito glass/MoO 3/ TCTA/Alq 3the luminous efficiency of organic electroluminescence device (curve 2) of/TAZ/LiF/Ag and the relation of brightness.Comparative example prepare the step of organic electroluminescence device and each layer thickness all identical with embodiment 1.
As seen from Figure 3, at different brightnesses, the luminous efficiency of organic electroluminescence device prepared by embodiment 1 is all larger than comparative example, and the maximum lumen efficiency of embodiment 1 is 5.8lm/W, and comparative example be only 3.58lm/W.Meanwhile, along with the raising of brightness, the luminous efficiency decay of embodiment 1 is slower.This illustrates, composite cathode is conducive to electron injection, and blocking hole traverses to negative electrode and electron recombination cancellation, improves the conductivity of device.Starvation and steam enter into device, finally improve luminous efficiency.
The luminous efficiency of organic electroluminescence device prepared of each embodiment is all similar with embodiment 1 below, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
It is AZO glass/V that the present embodiment prepares structure 2o 5/ TCTA/ADN/TAZ/CsF/Mg:FeBr 3: SiO 2organic electroluminescence device.Wherein, "/" represents stacked, and ": " represents mixing.
There is provided AZO glass as conductive anode substrate, and this AZO glass is carried out after photoetching cuts out, remove contamination with liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min successively.
Be 2 × 10 in operating pressure -3pa, the evaporation rate of organic material is 0.1nm/s, and the evaporation rate of metal and metallic compound is under the condition of 10nm/s, prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on the surface of AZO glass successively evaporation.The material of hole injection layer is V2O5, and thickness is 80nm.The material of hole transmission layer is TCTA, and thickness is 60nm.The material of luminescent layer is ADN, and thickness is 5nm.The material of electron transfer layer is TAZ, and thickness is 200nm.The material of electron injecting layer is CsF, and thickness is 10nm.
Be 10W/cm in electron beam energy 2condition under, prepare composite cathode at electron injecting layer surface electronic bundle evaporation.The material of composite cathode to be mass ratio be 2: 1: 1 Mg, FeBr 3and SiO 2mixture, thickness is 100nm.
Embodiment 3
It is IZO glass/WO that the present embodiment prepares structure 3/ TAPC/BCzVBi/TPBi/Cs 2cO 3/ Yb:Fe 2s 3: the organic electroluminescence device of NiO.Wherein, "/" represents stacked, and ": " represents mixing.
There is provided IZO glass as conductive anode substrate, and this IZO glass is carried out after photoetching cuts out, remove contamination with liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min successively.
Be 5 × 10 in operating pressure -5pa, the evaporation rate of organic material is 1nm/s, and the evaporation rate of metal and metallic compound is under the condition of 1nm/s, prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on the surface of IZO glass successively evaporation.The material of hole injection layer is WO 3, thickness is 20nm.The material of hole transmission layer is TAPC, and thickness is 30nm.The material of luminescent layer is BCzVBi, and thickness is 40nm.The material of electron transfer layer is TPBi, and thickness is 60nm.The material of electron injecting layer is Cs 2cO 3, thickness is 0.5nm.
Be 100W/cm in electron beam energy 2condition under, prepare composite cathode at electron injecting layer surface electronic bundle evaporation.The material of composite cathode to be mass ratio be 8: 2: 1 Yb, Fe 2s 3with the mixture of NiO, thickness is 400nm.
Embodiment 4
It is IZO glass/MoO that the present embodiment prepares structure 3/ NPB/DCJTB/Bphen/CsN 3/ Mg:FeBr 3: the organic electroluminescence device of CuO.Wherein, "/" represents stacked, and ": " represents mixing.
There is provided IZO glass as conductive anode substrate, and this IZO glass is carried out after photoetching cuts out, remove contamination with liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min successively.
Be 5 × 10 in operating pressure -4pa, the evaporation rate of organic material is 0.2nm/s, and the evaporation rate of metal and metallic compound is under the condition of 5nm/s, prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on the surface of IZO glass successively evaporation.The material of hole injection layer is MoO 3, thickness is 30nm.The material of hole transmission layer is NPB, and thickness is 50nm.The material of luminescent layer is DCJTB, and thickness is 5nm.The material of electron transfer layer is Bphen, and thickness is 40nm.The material of electron injecting layer is CsN 3, thickness is 1nm.
Be 60W/cm in electron beam energy 2condition under, prepare composite cathode at electron injecting layer surface electronic bundle evaporation.The material of composite cathode to be mass ratio be 5: 1.8: 1 Mg, FeBr 3with the mixture of CuO, thickness is 250nm.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic electroluminescence device, is characterized in that, comprise stack gradually conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and composite cathode;
The material of described composite cathode is the mixture of low workfunction metal, molysite and passivating material, and described low workfunction metal is Mg, Sr, Ca or Yb, and described molysite is FeCl 3, FeBr 3or Fe 2s 3, described passivating material is SiO 2, Al 2o 3, NiO or CuO.
2. organic electroluminescence device according to claim 1, is characterized in that, the mass ratio of described low workfunction metal, described molysite and described passivating material is 2: 1: 1 ~ 8: 2: 1.
3. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described composite cathode is 100nm ~ 400nm.
4. organic electroluminescence device according to claim 1, is characterized in that, described conductive anode substrate is indium tin oxide glass, aluminium zinc oxide glass or indium-zinc oxide glass.
5. organic electroluminescence device according to claim 1, it is characterized in that, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl of 4'-or oxine aluminium (Alq3);
The thickness of described luminescent layer is 5nm ~ 40nm.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Conductive anode substrate is provided;
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is prepared on the surface of described conductive anode substrate successively evaporation; And
Prepare composite cathode at the surface electronic bundle evaporation of described electron injecting layer, the material of described composite cathode is the mixture of low workfunction metal, molysite and passivating material, and described low workfunction metal is Mg, Sr, Ca or Yb, and described molysite is FeCl 3, FeBr 3or Fe 2s 3, described passivating material is SiO 2, Al 2o 3, NiO or CuO.
7. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the mass ratio of described low workfunction metal, described molysite and described passivating material is 2: 1: 1 ~ 8: 2: 1;
The thickness of described composite cathode is 100nm ~ 400nm.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, before the surperficial evaporation being also included in described conductive anode substrate prepares described hole injection layer, carry out after photoetching cuts out, successively with the operation of liquid detergent, deionized water, acetone, ethanol and isopropyl alcohol ultrasonic process 15min to described conductive anode substrate.
9. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, the described surface in described conductive anode substrate successively evaporation is prepared in the step of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and operating pressure is 2 × 10 -3pa ~ 5 × 10 -5pa, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
10. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the described surface electronic bundle evaporation at described negative electrode is prepared in the step of composite cathode, and the energy density of described electron beam evaporation plating is 10W/cm 2~ l00W/cm 2.
CN201310370321.6A 2013-08-22 2013-08-22 Organic electroluminescent device and preparation method thereof Pending CN104425725A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110447116A (en) * 2017-01-30 2019-11-12 多伦多大学管理委员会 Contact for perovskite opto-electronic device is passivated

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110447116A (en) * 2017-01-30 2019-11-12 多伦多大学管理委员会 Contact for perovskite opto-electronic device is passivated

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