CN104424474A - Surface-morphology recognition device - Google Patents
Surface-morphology recognition device Download PDFInfo
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- CN104424474A CN104424474A CN201310407689.5A CN201310407689A CN104424474A CN 104424474 A CN104424474 A CN 104424474A CN 201310407689 A CN201310407689 A CN 201310407689A CN 104424474 A CN104424474 A CN 104424474A
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- sensing
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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- Human Computer Interaction (AREA)
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Abstract
The invention discloses a surface-morphology recognition device. The surface-morphology recognition device comprises a substrate, a driving circuit, a reading circuit and a recognition circuit, wherein the substrate comprises a temperature sensor which comprises a sensing transistor. The driving circuit selects at least one transistor as a target sensing transistor, and outputs a driving signal to the target sensing transistor at the heating time so as to heat the target sensing transistor. The surface-morphology recognition device disclosed by the invention has the advantages that the target sensing transistor senses a sensing signal with the temperature changing along with the time in a sensing time, the sensing time is after the heating time. The reading circuit reads the sensing signal, and the recognition circuit recognizes the surface morphology according to the sensing signal.
Description
Technical field
The invention relates to a kind of electronic installation, and relate to a kind of surface topography recognition device especially.
Background technology
Phase measurement interferometric method (PMI) and atomic force microscope are two kinds of known surface topography recognition technologies.Phase measurement interferometric method normally produces interference figure by light beam and body surface reciprocation, and detects interference figure, and these interference figures detected can be used to construction surface topography again.Phase measurement interferometric method normally detects interference figure according to sector scanning video camera.
Atomic force microscope adopts tip radius to be the probe of number how rice mostly, utilize probes touch determinand surface to carry out the how rice structure measurement on surface, again by optical lever principle to measure the height fluctuations of semi-girder in atomic force microscopy system, to understand the mutual start between probe and determinand being mounted on semi-girder tip.But, phase measurement interferometric method and atomic force microscope not only technical sophistication and apparatus expensive.Moreover, phase measurement interferometric method and atomic force microscope not only can not carry, and practicality is not enough.So phase measurement interferometric method and atomic force microscope are difficult to be applied in fingerprint recognition.
Flourish along with science and technology, mobile phone, personal digital assistant (Personal DigitalAssistant, PDA), the increasing electronic installation such as digital camera, personal computer, notebook computer have become instrument indispensable in people's life.These electronic installations often store considerable information, as telephone directory, photograph or file etc.Once these electronic installations are lost or usurped, the information of its storage inside, just likely by others improper utilization.Because fingerprint has quite high unicity, therefore utilize fingerprint identification device to identify that the electronic installation of user gets more and more.After the fingerprint of fingerprint identification device record user, user just need not remember specific cryptosystem.Therefore, the risk will password be avoided being stolen or crack.
Summary of the invention
The invention relates to a kind of surface topography recognition device.
According to the present invention, a kind of surface topography recognition device is proposed.Surface topography recognition device comprises substrate, driving circuit, reading circuit and identification circuit.Substrate comprises temperature sensor, and temperature sensor comprises sensing transistor.At least one of driving circuit selection sensing transistor is object sensing transistor, and in heating interval output drive signal to object sensing transistor with heat target sensing transistor.Object sensing transistor senses the time dependent sensing signal of a temperature within the sensing period, and the sensing period is after heating interval.Reading circuit reads sensing signal, and identification circuit is according to sensing signal identified surface pattern.
In order to have better understanding, preferred embodiment cited below particularly to above-mentioned and other side of the present invention, and coordinating institute's accompanying drawings, being described in detail below.
Accompanying drawing explanation
Fig. 1 illustrates the Organization Chart into a kind of surface topography recognition device according to the first embodiment.
Fig. 2 illustrates the schematic diagram into the first temperature sensor.
Fig. 3 illustrates the partial schematic diagram into the substrate according to the first embodiment.
Fig. 4 illustrates the performance diagram of channel current Ids into N-type mos field effect transistor and voltage difference Vgs.
Fig. 5 illustrates the performance diagram of limit voltage Vth into N-type mos field effect transistor and temperature.
Fig. 6 illustrates the performance diagram of cut-off current Ioff into N-type mos field effect transistor and temperature.
Fig. 7 illustrates the performance diagram of voltage into diode and electric current.
Fig. 8 illustrates the performance diagram of forward voltage Von into diode and temperature.
Fig. 9 illustrates the partial schematic diagram into the substrate according to the second embodiment.
Figure 10 illustrates the partial schematic diagram into the substrate according to the 3rd embodiment.
Figure 11 illustrates the partial schematic diagram into the substrate according to the 4th embodiment.
Figure 12 illustrates the partial schematic diagram into the substrate according to the 5th embodiment.
Figure 13 illustrates the partial schematic diagram into the substrate according to the 6th embodiment.
Figure 14 illustrates the partial schematic diagram into the substrate according to the 7th embodiment.
Figure 15 illustrates the partial schematic diagram into the substrate according to the 8th embodiment.
Figure 16 illustrates the partial schematic diagram into the substrate according to the 9th embodiment.
Figure 17 illustrates as a kind of signal timing diagram according to the 9th embodiment.
[label declaration]
1: surface topography recognition device 2a ~ 2j: curve
4a, 4b: viewing area 11a, 11b, 11c, 11d, 11f, 11g: substrate
12: driving circuit 13: reading circuit
14: identification circuit 15: controller
16: storer
111,111a, 111b, 111c, 111d, 111e: temperature sensor
112,114: sweep trace 113,116: data line
115,117: pixel 1111: transistor
1111a:N type metal oxide semiconductor field effect transistor
1111b:NPN transistor 1111c: functional circuit
1111d:P type metal oxide semiconductor field effect transistor
1151:N type metal oxide semiconductor field effect transistor
B: base stage c: collector
E: emitter-base bandgap grading g: grid
D: drain electrode s: source electrode
Clc: liquid crystal capacitance G (n): sweep signal
D (m): data-signal Ids: channel current
Ioff: cut-off current I: electric current
Vgs: voltage difference Vds: voltage difference
Vth: limit voltage Von: forward voltage
R: resistance T1, T2: period
Embodiment
First embodiment
Illustrate the Organization Chart into a kind of surface topography recognition device according to the first embodiment referring to Fig. 1 and Fig. 2, Fig. 1, Fig. 2 illustrates the schematic diagram into the first temperature sensor.Surface topography recognition device 1 is such as Fingerprint Identification Unit, and surface topography recognition device 1 comprises substrate 11a, driving circuit 12, reading circuit 13, identification circuit 14, controller 15 and storer 16.Driving circuit 12, reading circuit 13, identification circuit 14 can be formed at substrate 11a further.Substrate 11a comprises temperature sensor 111, sweep trace 112 and data line 113, and temperature sensor 111 comprises sensing transistor 1111.Wherein sensing transistor 1111 is such as mos field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, or bipolarity junction transistor (bipolar junction transistor, BJT) MOSFET).Controller 15 controls driving circuit 12, and the recognition result of storer 16 store identification circuit 14.Driving circuit 12 comprises scanner driver 121 and data driver 122.Scanner driver 121 couples sweep trace 112, and data driver 122 couples data line 113.
Scanner driver 121 and data driver 122 select sensing transistor 1111 at least one be object sensing transistor, and prior to heating interval output drive signal to object sensing transistor with heat target sensing transistor.Drive singal is such as voltage signal or current signal.Object sensing transistor senses the time dependent sensing signal of a temperature again within the sensing period, and sensing signal is such as voltage signal or current signal.The sensing period is after heating interval.Reading circuit 13 reads sensing signal, and identification circuit 14 is according to sensing signal identified surface pattern.Wherein, surface topography is such as fingerprint crest (Ridge), fingerprint trough (Valley) or fingerprint.When drive singal is voltage signal, sensing signal is current signal.On the contrary, when drive singal is current signal, sensing signal is voltage signal.
It should be noted that, aforementioned sensing transistor 1111 not only can be selected, addressing and reading, and itself can be used as heating element.In addition, the heat-conducting medium due to fingerprint crest is human body, and its heat-conduction coefficient is about 0.58W/mk, and the heat-conducting medium of fingerprint trough is air, and its heat-conduction coefficient is about 0.024W/mk, the heat-conduction coefficient very different of human body and air.Therefore, the temperature variation at object sensing transistor sensing finger ripple peak is greater than the temperature variation of object sensing transistor sensing finger ripple paddy.So identification circuit 14 can identify according to the difference of sensing signal the fingerprint crest or fingerprint trough that object sensing transistor senses.
Please refer to Fig. 3, Fig. 3 illustrates the partial schematic diagram of the substrate being the first embodiment.Aforementioned temperature sensor can have multiple enforcement aspect, and for example, it is illustrate for temperature sensor 111a that Fig. 3 illustrates.The sensing transistor of temperature sensor 111a illustrates for N-type mos field effect transistor 1111a, and the grid g of N-type mos field effect transistor 1111a is connected to sweep trace 112.The drain electrode d of N-type mos field effect transistor 1111a is connected to data line 113, and the source electrode s of N-type mos field effect transistor 1111a is connected to an earth terminal.Illustrate for N-type mos field effect transistor 1111a though Fig. 3 illustrates, practical application is not limited thereto, and P-type mos field effect transistor also can be used as sensing transistor.
Please refer to Fig. 4, Fig. 5 and Fig. 6, Fig. 4 illustrates the performance diagram of channel current Ids into N-type mos field effect transistor and voltage difference Vgs, Fig. 5 illustrates the performance diagram of limit voltage Vth into N-type mos field effect transistor and temperature, the cut-off current Ioff of Fig. 6 N-type mos field effect transistor and the performance diagram of temperature.Please refer to shown in Fig. 4, when temperature is-30 DEG C and voltage difference Vds is 0.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2a; When temperature is-30 DEG C and voltage difference Vds is 10.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2b; When temperature is 0 DEG C and voltage difference Vds is 0.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2c; When temperature is 0 DEG C and voltage difference Vds is 10.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2d; When temperature is 25 DEG C and voltage difference Vds is 0.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2e; When temperature is 25 DEG C and voltage difference Vds is 10.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2f; When temperature is 50 DEG C and voltage difference Vds is 0.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2g; When temperature is 50 DEG C and voltage difference Vds is 10.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2h; When temperature is 80 DEG C and voltage difference Vds is 0.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2i; When temperature is 80 DEG C and voltage difference Vds is 10.1V, the relation of channel current Ids and voltage difference Vgs is as shown in curve 2j.It can thus be appreciated that when fixed voltage difference Vgs, channel current Ids can vary with temperature and change.Thus, when the drive singal that aforementioned heating interval exports is drain voltage, then the sensing signal produced in the sensing period is channel current Ids.
Earlier figures 4 can be represented by Fig. 5 and Fig. 6 further.In Fig. 5 illustrates, limit voltage Vth varies with temperature, and limit voltage Vth rises with temperature and declines.Thus, when the drive singal that aforementioned heating interval exports is channel current Ids, then the sensing signal produced in the sensing period is limit voltage Vth.In Fig. 6 illustrates, cut-off current Ioff varies with temperature, and cut-off current Ioff rises with temperature and rises.Thus, when the drive singal that aforementioned heating interval exports is grid voltage, then the sensing signal produced in the sensing period is cut-off current Ioff.
Referring to Fig. 5, Fig. 7 and Fig. 8, Fig. 7 illustrates the performance diagram of voltage into diode and electric current, and Fig. 8 illustrates the performance diagram of forward voltage Von into diode and temperature.When temperature is-25 DEG C, the voltage of diode and the relation of electric current I are as shown in curve 3a; When temperature is 0 DEG C, the voltage of diode and the relation of electric current I are as shown in curve 3b; When temperature is 25 DEG C, the voltage of diode and the relation of electric current I are as shown in curve 3c; When temperature is 50 DEG C, the voltage of diode and the relation of electric current I are as shown in curve 3d; When temperature is 75 DEG C, the voltage of diode and the relation of electric current I are as shown in curve 3e.It can thus be appreciated that the forward voltage Von of diode can change with temperature as shown in Figure 8, and the forward voltage Von of diode rises with temperature and declines.Can push away the temperature coefficient of N-type mos field effect transistor is that temperature often rises 1 DEG C and limit voltage Vth decline 3.75mV further by Fig. 5, and the temperature coefficient that can be derived from diode by Fig. 8 is temperature often rises 1 DEG C and forward voltage Von decline 1.8mV.It can thus be appreciated that limit voltage Vth variation with temperature amount will be greater than forward voltage Von variation with temperature amount, and obvious mos field effect transistor is quite applicable to being used as temperature sensor.
Second embodiment
Please refer to Fig. 9, Fig. 9 illustrates the partial schematic diagram of the substrate being the second embodiment.It is illustrate for temperature sensor 111b that second embodiment and the first embodiment main difference part are that Fig. 9 illustrates.Temperature sensor 111b comprises NPN transistor 1111b, and the base stage b of NPN transistor 1111b is connected to sweep trace 112.The collector c of NPN transistor 1111b is connected to data line 113, and the emitter-base bandgap grading e of NPN transistor 1111b is connected to an earth terminal.Illustrate for NPN transistor 1111b though Fig. 9 illustrates, practical application is not limited thereto, and PNP transistor also can be used as sensing transistor.
3rd embodiment
Please refer to Figure 10, Figure 10 illustrates the partial schematic diagram of the substrate being the 3rd embodiment.It is illustrate for temperature sensor 111c that 3rd embodiment and the first embodiment main difference part are that Figure 10 illustrates.Temperature sensor 111c, except N-type mos field effect transistor 1111a, also comprises resistance R.One end of resistance R is connected to data line 113, and the other end of resistance R is connected to the drain electrode d of N-type mos field effect transistor 1111a.The grid g of N-type mos field effect transistor 1111a is connected to sweep trace 112, and the source electrode s of N-type mos field effect transistor 1111a is connected to an earth terminal.
4th embodiment
Please refer to Figure 11, Figure 11 illustrates the partial schematic diagram of the substrate being the 4th embodiment.It is illustrate for temperature sensor 111d that 4th embodiment and the second embodiment main difference part are that Figure 11 illustrates.Temperature sensor 111d, except NPN transistor 1111b, also comprises resistance R.One end of resistance R is connected to data line 113, and the other end of resistance R is connected to the collector c of NPN transistor 1111b.The base stage b of NPN transistor 1111b is connected to sweep trace 112, and the emitter-base bandgap grading e of NPN transistor 1111b is connected to an earth terminal.
5th embodiment
Please refer to Figure 12, Figure 12 illustrates the partial schematic diagram of the substrate being the 5th embodiment.It is illustrate for temperature sensor 111e that 5th embodiment and the first embodiment main difference part are that Figure 12 illustrates.Temperature sensor 111e, except N-type mos field effect transistor 1111a, also comprises functional circuit 1111c.Functional circuit 1111c connects N-type mos field effect transistor 1111a.Functional circuit 1111c is such as amplifying circuit, compensating circuit or filtering circuit, and wherein, amplifying circuit, compensating circuit or filtering circuit are respectively in order to carry out signal amplification, signal compensation or signal filtering by sensing signal.
6th embodiment
The partial schematic diagram of the substrate being the 6th embodiment is illustrated referring to Fig. 1 and Figure 13, Figure 13.It is illustrate for substrate 11b that 6th embodiment and the first embodiment main difference part are that Figure 13 illustrates.Substrate 11b comprises sweep trace 112, data line 113, sweep trace 114, temperature sensor 111c and pixel 115, and temperature sensor 111c and pixel 115 arrange alternately, wherein, temperature sensor 111c comprises N-type mos field effect transistor 1111a.Sweep trace 112 connects N-type mos field effect transistor 1111a, to control the 1111a conducting of N-type mos field effect transistor or cut-off.Sweep trace 114 connects pixel 115, to control pixel 115 whether show image.Data line 113 connects N-type mos field effect transistor 1111a and pixel 115 respectively.
7th embodiment
The partial schematic diagram of the substrate being the 7th embodiment is illustrated referring to Fig. 1 and Figure 14, Figure 14.It is illustrate for substrate 11c that 7th embodiment and the first embodiment main difference part are that Figure 14 illustrates.Substrate 11c by two mutually independent and respectively in order to sensing substrate 11a with formed in order to the substrate 11g shown.Substrate 11c comprises sweep trace 114, pixel 115 and data line 116.Pixel 115 connection data line 116 is also controlled by sweep trace 114.Sweep trace 114 can be connected to same scanner driver 121 with sweep trace 112, and data line 116 can be connected to same data driver 122 with data line 113.Scanner driver 121 and data driver 122 drive pixel 115, and wherein, the set-up mode of two separate substrates 11a, 11g is non-is emphasis of the present invention, therefore does not repeat.
8th embodiment
The partial schematic diagram of the substrate being the 8th embodiment is illustrated referring to Fig. 1 and Figure 15, Figure 15.It is illustrate for substrate 11d that 8th embodiment and the first embodiment main difference part are that Figure 15 illustrates.Substrate 11d is the substrate with viewing area, and this viewing area can be divided into viewing area 4a and viewing area 4b.Substrate 11d comprises temperature sensor 111c, pixel 115 and pixel 117, and temperature sensor 111c, pixel 115 and pixel 117 are connected to data line 113.Pixel 115 and temperature sensor 111c are staggered and are positioned at the viewing area 4a of substrate 11d.Pixel 117 is positioned at the viewing area 4b of substrate 11d.Pixel 115 and pixel 117 are controlled by sweep trace 114, and temperature sensor 111c is controlled by sweep trace 112.
9th embodiment
Referring to Fig. 1, Figure 16 and Figure 17.Figure 16 illustrates the partial schematic diagram of the substrate being the 9th embodiment, and Figure 17 illustrates as a kind of signal timing diagram according to the 9th embodiment.It is illustrate for substrate 11f that 9th embodiment and the first embodiment main difference part are that Figure 15 illustrates.Substrate 11f comprises temperature sensor 111f, sweep trace 112, data line 113 and pixel 115.Temperature sensor 111f comprises P-type mos field effect transistor 1111d and resistance R.The other end of one end connection data line 113, resistance R of resistance R connects P-type mos field effect transistor 1111d.Pixel 115 comprises N-type mos field effect transistor 1151 and liquid crystal capacitance Clc, and N-type mos field effect transistor 1151 connects liquid crystal capacitance Clc, sweep trace 112 and data line 113.N-type mos field effect transistor 1151 determines whether data-signal D (m) on data line 113 is write liquid crystal capacitance Clc according to the sweep signal G (n) on sweep trace 112.P-type mos field effect transistor 1111d connects sweep trace 112 and data line 113, and data-signal D (m) on the sweep signal G (n) be controlled by sweep trace 112 and data line 113.
Driving circuit 12 select N-type mos field effect transistor 1151 at least one be a target display transistor, and at least one selecting P-type mos field effect transistor 1111d is an object sensing transistor.The positive electricity that target display transistor is controlled by sweep signal G (n) is pressed on period T1 conducting, and data-signal D (m) of positive polarity is write liquid crystal capacitance Clc.The negative electricity that P-type mos field effect transistor 1111d is controlled by sweep signal G (n) is pressed on period T2 conducting, and receives data-signal D (m) of negative polarity.
In sum, although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on the appended right person of defining.
Claims (17)
1. a surface topography recognition device, comprising:
One first substrate, comprising:
Multiple temperature sensor, respectively comprises a sensing transistor;
One drive circuit, in order to select those sensing transistors at least one be an object sensing transistor, and export a drive singal to this object sensing transistor to heat this object sensing transistor in a heating interval, this object sensing transistor senses the time dependent sensing signal of a temperature within a sensing period, wherein, this sensing period is after this heating interval;
One reading circuit, in order to read this sensing signal; And
One identification circuit, in order to according to this this surface topography of sensing signal identification.
2. surface topography recognition device according to claim 1, wherein this sensing transistor is mos field effect transistor.
3. surface topography recognition device according to claim 1, wherein respectively this sensing transistor is bipolarity junction transistor.
4. surface topography recognition device according to claim 1, wherein this temperature sensor also comprises a resistance, and this resistance connects this sensing transistor.
5. surface topography recognition device according to claim 1, wherein this temperature sensor also comprises a functional circuit, and this functional circuit connects this sensing transistor.
6. surface topography recognition device according to claim 5, wherein this functional circuit is selected from the group be made up of amplifying circuit, compensating circuit, filtering circuit.
7. surface topography recognition device according to claim 2, wherein this drive singal is a voltage signal, and this sensing signal is a current signal.
8. surface topography recognition device according to claim 7, wherein this voltage signal is a drain voltage, and this current signal is a channel current.
9. surface topography recognition device according to claim 2, wherein this drive singal is a current signal, and this sensing signal is a voltage signal.
10. surface topography recognition device according to claim 9, wherein this current signal is a channel current, and this voltage signal is a drain voltage.
11. surface topography recognition devices according to claim 1, wherein this driving circuit, this reading circuit and this identification circuit are formed at this first substrate.
12. surface topography recognition devices according to claim 1, wherein this first substrate also comprises multiple first pixel and multiple second pixel, the plurality of first pixel and the plurality of temperature sensor are staggered and are positioned at one first viewing area of this first substrate, and the plurality of second pixel is positioned at one second viewing area of this first substrate.
13. surface topography recognition devices according to claim 1, also comprise a second substrate, this second substrate comprises multiple pixel, and this driving circuit drives the plurality of pixel.
14. surface topography recognition devices according to claim 1, wherein this first substrate also comprises:
Multi-strip scanning line, connects those sensing transistors respectively; And
A plurality of data lines, connects those sensing transistors respectively.
15. surface topography recognition devices according to claim 1, wherein this first substrate also comprises:
Multiple pixel;
Many the first sweep traces, connect those sensing transistors respectively;
Many the second sweep traces, connect those pixels respectively; And
A plurality of data lines, connects those sensing transistors and those pixels respectively.
16. surface topography recognition devices according to claim 1, wherein this first substrate also comprises:
Multiple pixel;
Multi-strip scanning line, connects those sensing transistors and those pixels respectively; And
A plurality of data lines, connects those sensing transistors and those pixels respectively.
17. surface topography recognition devices according to claim 16, wherein those pixels each comprise a N-type mos field effect transistor, those sensing transistors each are a P-type mos field effect transistor, those N-type mos field effect transistor selected by this driving circuit, and one of them is target display transistor, this target display transistor is controlled by a positive electricity and is pressed on the conducting of one first period, this object sensing transistor is controlled by a negative electricity and is pressed on the conducting of one second period, this first period is not identical with this second period.
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| CN201310407689.5A CN104424474A (en) | 2013-09-09 | 2013-09-09 | Surface-morphology recognition device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1180998A (en) * | 1995-04-11 | 1998-05-06 | 丁玉明 | Fingerprint sensor |
| CN1397907A (en) * | 2001-07-18 | 2003-02-19 | 佳能株式会社 | Iamge processor |
| TW558686B (en) * | 2001-07-06 | 2003-10-21 | Jeng-San Jou | Temperature difference sensing fingerprint recognition chip design |
| WO2005031636A1 (en) * | 2003-09-24 | 2005-04-07 | Authentec, Inc. | Finger biometric sensor with sensor electronics distributed over thin film and monocrystalline substrates and related methods |
| US20110274138A1 (en) * | 2009-01-19 | 2011-11-10 | Neosens | Microsensor produced in microsystem technologies for the measurement and/or detection of fouling |
-
2013
- 2013-09-09 CN CN201310407689.5A patent/CN104424474A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1180998A (en) * | 1995-04-11 | 1998-05-06 | 丁玉明 | Fingerprint sensor |
| TW558686B (en) * | 2001-07-06 | 2003-10-21 | Jeng-San Jou | Temperature difference sensing fingerprint recognition chip design |
| CN1397907A (en) * | 2001-07-18 | 2003-02-19 | 佳能株式会社 | Iamge processor |
| WO2005031636A1 (en) * | 2003-09-24 | 2005-04-07 | Authentec, Inc. | Finger biometric sensor with sensor electronics distributed over thin film and monocrystalline substrates and related methods |
| US20110274138A1 (en) * | 2009-01-19 | 2011-11-10 | Neosens | Microsensor produced in microsystem technologies for the measurement and/or detection of fouling |
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