CN104422550B - Capacitance pressure transducer and forming method thereof - Google Patents
Capacitance pressure transducer and forming method thereof Download PDFInfo
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- CN104422550B CN104422550B CN201310383322.4A CN201310383322A CN104422550B CN 104422550 B CN104422550 B CN 104422550B CN 201310383322 A CN201310383322 A CN 201310383322A CN 104422550 B CN104422550 B CN 104422550B
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Abstract
A kind of capacitance pressure transducer and forming method thereof, wherein, described capacitance pressure transducer, including：Substrate, in substrate and run through the etched hole of its thickness；Cover the barrier film of described substrate and etched hole, and the portion septum above etched hole raises up, there is between the barrier film raising up and substrate the 3rd cavity, the 3rd cavity and etched hole constitute the second cavity；Be located on raised barrier film two ends relative to first electrode and second electrode, there is between first electrode and second electrode the first cavity；Sealant on the back side of substrate, sealant seals the opening of the second cavity lower end.The area of the substrate surface that the capacitance pressure transducer of the present invention occupies is less, improves the integrated level of device.
Description
Technical field
The present invention relates to microcomputer electrical domain（MEMS）, particularly to a kind of capacitance pressure transducer and
Its forming method.
Background technology
At present, the species of pressure transducer mainly include pressure resistance type, piezoelectric type, condenser type, potentiometer type,
Inductance bridge formula, strain gage etc..Wherein, capacitive pressure transducer has high sensitivity, and not
The advantage being easily affected by the external environment, is commercially gradually attracted attention.
Due to traditional pressure transducer have that size is larger, processing technology is more numerous and inconvenient operation etc. because
The restriction of element.MEMS（Micro-Electro-Mechanical Systems, MEMS）Technology is extensive
The making applied in pressure transducer.MEMS technology make pressure transducer have microminiaturization, can
The advantages of batch making, low cost, high precision, and pressure transducer and control circuit can be integrated in same
So that the faint output signal of sensor can be amplified processing nearby in one substrate, it is to avoid outer
The electromagnetic interference on boundary, improves the reliability of transmission signal.
With reference to Fig. 1, Fig. 1 is the cross-sectional view of existing capacitance pressure transducer.
As shown in figure 1, described semiconductor pressure sensor includes：Semiconductor base 100；Positioned at quasiconductor
Doped region 104 in substrate 100, described doped region 104 is used for the bottom electrode as capacity plate antenna；It is located at
The barrier film 103 of doped layer 104 top, barrier film 103 is as the Top electrode of capacity plate antenna；Positioned at semiconductor-based
The pedestal 101 of described barrier film 103 is supported on bottom 100；Have between described barrier film 103 and doped region 104
Cavity 102, barrier film 103, doped region 104 and cavity 102 constitute capacity plate antenna；In pedestal 101
Control circuit（In figure is not shown）, described control circuit electrically connected with capacity plate antenna.
When the barrier film 103 in above-mentioned capacity plate antenna applies testing pressure, or the inside and outside tool when barrier film 103
When having pressure differential, the middle body of barrier film 103 is under pressure and can produce deformation, thus changing this flat board electricity
The capacitance holding, can detect the variable quantity of this capacity plate antenna value, to obtain pressure by control circuit
Change.The computing formula of the capacitance of described capacity plate antenna is formula（1）C=ε S/d, wherein ε are cavity
The dielectric constant of the dielectric medium of 102 fillings, S is the facing area between barrier film 103 and doped region 104,
D is the distance between barrier film 103 and doped region 104, and capacitance change（△C=C-C0）With pressure
Relational expression be formula（2）For F=PA=kd0（△C）/C0, the elastic force that wherein F is subject to for capacity plate antenna,
K is the spring ratio of barrier film 103, d0For the initial range between barrier film 103 and doped region 104, C0
Initial capacitance for capacity plate antenna.The capacitance change of capacity plate antenna is therefore measured by control unit（△
C=C-C0）It is possible to very easily obtain the pressure F that capacity plate antenna is subject to.
But the surface area of the semiconductor base that existing capacitance pressure transducer occupies is larger.
Content of the invention
The problem that the present invention solves is to reduce the surface area of the substrate that capacitance pressure transducer occupies.
For solving the above problems, the present invention provides a kind of forming method of capacitance pressure transducer, including：
Substrate is provided, described substrate forms etched hole；Form the first sacrifice layer on the substrate, described
First sacrifice layer includes filling the Part I of full etched hole and the Part II of covering part substrate surface,
Part I is located at immediately below Part II；Barrier film is formed on described first sacrifice layer and substrate；In portion
Second sacrifice layer is formed on separation membrane, and described second sacrifice layer is located on the Part II of the first sacrifice layer
Side；The both sides sidewall surfaces of described second sacrifice layer form relative first electrode and second electrode,
And described first electrode and second electrode part are located at membrane surface；Remove described second sacrifice layer,
Form the first cavity between one electrode and second electrode；Planarization or the back side etching described substrate, until
Expose the first sacrifice layer of etched hole bottom；Remove described first sacrifice layer, formed in the bottom of barrier film
Second cavity；The sealant of the bottom opening sealing described second cavity is formed on the back side of substrate.
Optionally, described second sacrifice layer width be less than the first sacrifice layer Part II width, second
The length of sacrifice layer is equal to or less than the length of the first sacrifice layer Part II.
Optionally, the thickness of the Part II of described first sacrifice layer is 0.1～10 micron, the first sacrifice layer
Part II width be 0.1～10000 micron.
Optionally, the forming process of described first electrode and second electrode is：In described second sacrifice layer
The surface of side wall and surface and barrier film forms electrode material layer；Mask is formed on described electrode material layer
Layer, described mask layer covers the electrode material layer on the second sacrifice layer both sides side wall and on portion septum；Go
Except the electrode material layer not covered by mask layer, the both sides sidewall surfaces of described second sacrifice layer are formed
Relative first electrode and second electrode.
Optionally, described first electrode or second electrode include Part I and Part II, Part I
Positioned at the both sides sidewall surfaces of the second sacrifice layer, Part II is located at the top of the Part II of the first sacrifice layer
The surface of the barrier film in portion and side wall.
Optionally, described first electrode or second electrode include Part I and Part II, Part I
Positioned at the both sides sidewall surfaces of the second sacrifice layer, Part II is located at the top of the Part II of the first sacrifice layer
The surface of the barrier film in portion and side wall and the suprabasil membrane surface of the second sacrifice layer both sides.
Optionally, the spacing between first electrode and second electrode is 0.1～10000 micron.
Optionally, the width of described etched hole is less than the width of the first sacrifice layer Part II, described etching
The depth in hole is more than 50 microns, and width is 0.1～10000 micron.
Optionally, described first sacrifice layer or the second sacrificial layer material are with respect to substrate, barrier film, the first electricity
Pole and second electrode material have high etching selection ratio.
Optionally, the material of described first sacrifice layer or the second sacrifice layer is bottom antireflective coating, polycrystalline
Silicon, amorphous silicon, amorphous carbon, SiN, SiON, SiCN, SiC, BN, SiCOH, BN or SiGe.
Optionally, also include：On other regions of described substrate or other substrates formed control circuit and
Interconnection structure, first electrode is connected with control circuit by interconnection structure with second electrode.
Optionally, the thickness of described barrier film is 0.1～10 micron.
Present invention also offers a kind of capacitance pressure transducer, including：Substrate, in substrate and pass through
Wear the etched hole of its thickness；Cover the barrier film of described substrate and etched hole, and the part above etched hole
Barrier film raises up, and has the 3rd cavity, the 3rd cavity and etching between the barrier film raising up and substrate
Hole constitutes the second cavity；Be located on raised barrier film two ends relative to first electrode and second electrode, first
There is between electrode and second electrode the first cavity；Sealant on the back side of substrate, sealant is close
Seal the opening of the second cavity lower end.
Optionally, the height of described 3rd cavity is 0.1～10 micron, and width is 0.1～10000 micron.
Optionally, the spacing between first electrode and second electrode is 0.1～10000 micron.
Optionally, the width of described 3rd cavity is more than the width of etched hole.
Optionally, described first electrode or second electrode include Part I and Part II, Part I
Positioned at the both sides of the first cavity, Part II is located at the top of bossing and the sidewall surfaces of barrier film.
Optionally, described first electrode or second electrode include Part I and Part II, Part I
Positioned at the both sides of the first cavity, Part II be located at the top of bossing of barrier film and sidewall surfaces and
In the substrate of bossing both sides of barrier film.
Optionally, other regions of described substrate or other substrates also have control circuit and interconnection structure,
First electrode is connected with control circuit by interconnection structure with second electrode.
Optionally, the thickness of described barrier film is 0.1～10 micron.
Compared with prior art, technical scheme has advantages below：
The capacitance pressure transducer of the present invention includes the barrier film of projection, phase on raised barrier film two ends
To first electrode and second electrode, there is between first electrode and second electrode the first cavity.Compared to
Two Top electrodes parallel to semiconductor base of the capacitance pressure transducer of prior art and bottom electrode,
First electrode surface with substrate vertical with second electrode in the present invention is so that first electrode and second electrode
The surface area of the substrate occupying reduces, and saves the area that capacitance pressure transducer occupies, thus having
Beneficial to the integrated level improving device.
Further, described first electrode or second electrode include Part I and Part II, Part I
Positioned at the both sides sidewall surfaces of the second sacrifice layer, Part II is located at the Part II top of the first sacrifice layer
Surface with the barrier film on the wall of side.The Part II of first electrode or second electrode and the of the first sacrifice layer
Membrane surface on two atop part and side wall contacts, and contact area is larger, improve first electrode or
The contact adhesion with barrier film for the second electrode and mechanical strength, effectively prevent first electrode or second electrode
Come off or deform.
The forming method of the capacitance pressure transducer of the present invention, its formation process is simple, the electric capacity of formation
The integrated level of formula pressure transducer is higher, in addition, by substrate is carried out thinning after, from separator bottom
Direction removes the first sacrifice layer so that the bossing of barrier film keeps integrity so that barrier film keeps stronger
Mechanical strength and bigger pressure can be born, improve the performance of capacitance pressure transducer.
Brief description
Fig. 1 is the cross-sectional view of the capacitance pressure transducer of prior art；
Fig. 2～Figure 11 is that the cross-section structure of embodiment of the present invention capacitance pressure transducer forming process is illustrated
Figure.
Specific embodiment
Existing capacitance pressure transducer adopts capacity plate antenna as sensing element, with reference to Fig. 1, MEMS
The capacity plate antenna of fabrication techniques includes doped region 104（Bottom electrode）, the barrier film 103 relative with doped region 104
（Top electrode）And it is located at the cavity 103 between doped region 104 and barrier film 103（Dielectric medium）.
Sensitivity is the important indicator of the performance weighing capacitance pressure transducer, barrier film 103（Top electrode）
Area or barrier film 103 and doped region 104（Bottom electrode）Between facing area S be that sensitivity is had
One parameter of material impact, in general, barrier film 103 under condition of equivalent thickness, barrier film 103（Top electrode）
Area bigger, the area that can make pressure sensitive face can be bigger, and barrier film 103 can be got over to the sensing of pressure
Sensitivity, barrier film 103 is sensitiveer with the change meeting of doped region 104 distance, thus improve capacitive pressure passing
The sensitivity of sensor.Although between the area of increase barrier film 103 or barrier film 103 and doped region 104 just
Area S can be improved with the sensitivity of capacitance pressure transducer, but increase barrier film to a certain extent
103 and the facing area of doped region 104 can make the table of semiconductor base that capacitance pressure transducer occupies
Area increases, and is unfavorable for the raising of the integrated level of device.Therefore, using the capacitive pressure of capacity plate antenna
Transducer sensitivity and can detect pressure scope need to be improved.
The invention provides a kind of capacitance pressure transducer and forming method thereof, wherein said condenser type pressure
Force transducer include projection barrier film, on raised barrier film two ends relative to first electrode and second electricity
Pole, has the first cavity between first electrode and second electrode.Capacitive pressure compared to prior art
The two of sensor are parallel to the Top electrode of semiconductor base and bottom electrode, first electrode and second in the present invention
The vertical surface with substrate of electrode is so that the surface area of substrate that first electrode and second electrode occupy subtracts
Little, save the area that capacitance pressure transducer occupies, thus being conducive to improving the integrated level of device.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.When describing the embodiment of the present invention in detail, for purposes of illustration only,
Schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and its here should not
Limit the scope of the invention.Additionally, the three of length, width and depth should be comprised in actual fabrication
Dimension space size.
Fig. 2～Figure 11 is that the cross-section structure of embodiment of the present invention capacitance pressure transducer forming process is illustrated
Figure.
With reference to Fig. 2, provide substrate 200, described substrate 200 forms etched hole 201.
Described substrate 200 is as the carrier being subsequently formed capacitance pressure transducer.
Substrate 200 described in substrate 200 substrate 200 can be single or multiple lift stacked structure.When described base
When bottom 200 is multilayer lamination structure, such as：When described substrate is double stacked structure, described substrate bag
Include Semiconductor substrate and the dielectric layer positioned at semiconductor substrate surface, or described substrate includes first medium
Layer and the second dielectric layer being located at first medium layer surface.
Substrate 200 described in the present embodiment is double stacked structure, including：Semiconductor substrate and be located at half
Dielectric layer on conductor substrate, Semiconductor substrate can be silicon substrate, germanium substrate, silicon-Germanium substrate, carbonization
Silicon；Silicon-on-insulator substrate, the substrate of germanium substrate on insulator, gallium arsenide substrate or other etchings, institute
Stating dielectric layer material can be SiO2, SiN, SiON or SiCN etc..In the present embodiment, described partly lead
Body substrate is silicon substrate, and the material of described dielectric layer is SiO2, described etched hole 201 runs through dielectric layer,
And part is located in Semiconductor substrate.
Described etched hole 201 as the follow-up passage removing during the first sacrifice layer, described etched hole 201
Depth D1 be more than 50 microns, the width W2 of etched hole 201 can be 0.1～10000 micron, carves
The width of pit 201 is less than the width of the Part II of the first sacrifice layer being subsequently formed.Need explanation
Be described etched hole can be other suitable depth or width.
With reference to Fig. 3, the first sacrifice layer 202, described first sacrifice layer 202 are formed on described substrate 200
Including the full etched hole 201 of filling（With reference to Fig. 2）Part I 21 and covering part substrate 200 surface
Part II 22, Part I 21 be located at Part II 22 immediately below.It should be noted that accompanying drawing
3 and subsequent drawings in, in order to distinguish conveniently, separated with dotted line between Part I and Part II.
The forming process of described first sacrifice layer 202 is：First sacrifice material is formed on described substrate 200
The bed of material, the full etched hole 201 of the first sacrificial material layer filling；Form mask layer in the first expendable material layer surface,
Described mask layer has the opening on the part of substrate surface exposing etched hole both sides；Etch along opening and remove base
Part first sacrificial material layer on bottom, forms the first sacrifice layer 202.
The Part II 22 of the first sacrifice layer 202 is higher than the surface of substrate 200, subsequently can be in substrate 200
Upper formation has the barrier film of projection, and forms the second cavity after subsequently removing the first sacrifice layer 202.
The material of described first sacrifice layer 202 with respect to substrate 200, barrier film 203 and be subsequently formed first
Electrode and second electrode material have high etching selection ratio.
The material of described first sacrifice layer 202 can for bottom antireflective coating, polysilicon, amorphous silicon,
Amorphous carbon, SiN, SiON, SiCN, SiC, BN, SiCOH, BN or SiGe.In the present embodiment,
The material of described first sacrifice layer 202 is bottom antireflective coating.
The thickness T1 of the Part II 22 of described first sacrifice layer 202 can be 0.1～10 micron, second
The width W1 of part 22 can be 0.1～10000 micron, and the width W1 of Part II 22 is more than etching
The width in hole.It should be noted that the Part II of described first sacrifice layer can be other suitable thickness
Or width.
With reference to Fig. 4, barrier film 203 is formed on described first sacrifice layer 202 and substrate 200.
Described barrier film 203 is as the pressure sensitive film of capacitance pressure transducer.
Described barrier film 203 is fine and close insulating dielectric materials, such as：SiN, SiON, SiCN, SiC or
BN or other suitable materials.In the present embodiment, the material of described barrier film 203 is SiN.
The portion septum 203 of Part II 22 top of the first sacrifice layer 202 is raised in substrate 200 surface,
After follow-up the first sacrifice layer in removal, the second cavity can be formed between barrier film 203 and substrate 200, formed
After second cavity, the bossing of barrier film 203 is contacted with substrate 200 surface of surrounding, improve every
The mechanical strength of film 203 is so that barrier film 203 can bear bigger pressure.
The thickness of described barrier film 203 is 0.1～10 micron, makes barrier film 203 have higher mechanical strength.
It should be noted that described barrier film can be other suitable thickness.
Then, with reference to Fig. 5, the second sacrifice layer 204 is formed on portion septum 203, and described second sacrificial
Domestic animal layer 204 is located above the Part II 22 of the first sacrifice layer 202.
Described second sacrifice layer 204 is located at directly over the Part II 22 of the first sacrifice layer 202（Or position
Part surface in raised barrier film 203）, the width of described second sacrifice layer 204 is less than the first sacrifice layer
The width of 202 Part II 22, the length of the second sacrifice layer 204 is equal to the first sacrifice layer Part II
Length, subsequently formed on the both sides side wall of the second sacrifice layer 204 relative first electrode and second electricity
Pole, the width of the second sacrifice layer 204 determine between the first electrode being subsequently formed and second electrode away from
From.It should be noted that second of the width of described second sacrifice layer 204 and the first sacrifice layer 202
Points 22 width refers to size, the length of the second sacrifice layer 204 and the first sacrifice layer 202 along the x-axis direction
Part II 22 the length size that refers to along the y-axis direction.
The material of described second sacrifice layer 204 is with respect to substrate 200, barrier film 203, first electrode and second
Electrode material has high etching selection ratio, subsequently when removing the second sacrifice layer 204, can prevent to base
Bottom 200, barrier film 203, first electrode and second electrode material etc. cause damage or over etching.Specifically,
The material of described second sacrifice layer 204 is bottom antireflective coating, polysilicon, amorphous silicon, amorphous
Carbon, SiN, SiON, SiCN, SiC, BN, SiCOH, BN or SiGe.In the present embodiment, described
The material of the second sacrifice layer 204 is amorphous carbon.
The stereochemical structure being shaped as at least there is both sides parallel side of described second sacrifice layer 204, subsequently
First electrode and second electrode, described parallel sides can be formed respectively on two parallel side of stereochemical structure
Face can be parallel plane, parallel cambered surface, parallel surfaces etc..Parallel side is parallel cambered surface or parallel song
During face, the corresponding first electrode making to be subsequently formed also is parallel cambered surface or parallel surfaces with second electrode,
Compared to plane electrode, increase the size of the facing area of electrode, thus increasing the size of electric capacity,
Be conducive to improving the sensitivity of capacitance pressure transducer.
In the present embodiment, being shaped as of described second sacrifice layer 204 has two plane-parallel cubes,
Its formation process is simple, and technique burden is less.
Then, with reference to Fig. 6 and Fig. 7, in side wall and surface and the barrier film of described second sacrifice layer 204
203 surface forms electrode material layer 205；Described electrode material layer 205 forms mask layer 206,
Described mask layer 206 covers the electrode material on the second sacrifice layer 204 both sides side wall and on portion septum 203
The bed of material 205.
Described electrode material layer 205 is subsequently used for forming the first electrode and second of capacitance pressure transducer
Electrode, the formation process of electrode material layer 205 is deposition or sputters.
Described electrode material layer 205 can for Al, Cu, Ag, Au, Pt, Ni, Ti, TiN, TaN,
Ta, TaC, TaSiN, W, WN or Wsi.
Described electrode material layer 205 can be single or multiple lift stacked structure.
In the present embodiment, electrode material layer 205 is single layer structure, and the material of electrode material layer 205 is TiN,
The technique forming electrode material layer 205 is sputtering, and the thickness of electrode material layer 205 is 0.1～10 micron.
Described mask layer 206 covers the electricity on the second sacrifice layer 204 both sides side wall and on portion septum 203
Pole material layer 205, mask layer 206 has opening, and described opening exposes the second sacrifice layer 204 top table
Face and the partial sidewall of the second sacrifice layer（The two opposite side walls arranged along the y-axis direction）Electrode material
Layer and the electrode material layer being located in substrate 200.
The material of described mask layer 206 can be photoresist.
Then, with reference to Fig. 8, remove not by mask layer 206（With reference to Fig. 7）The electrode material layer 205 covering,
Relative first electrode 207 and the second electricity are formed on the both sides sidewall surfaces of described second sacrifice layer 204
Pole 208.
The technique removing described electrode material layer 205 is dry etching, in the present embodiment, using fluorine-containing etc.
Plasma etching removes not by mask layer 206（With reference to Fig. 7）The electrode material layer 205 covering.
In the present embodiment, described first electrode 207 or second electrode 208 include Part I and second
Point, Part I is located at the both sides sidewall surfaces of the second sacrifice layer 208, and Part II is located at the first sacrifice
The surface of the barrier film on Part II 22 top and side wall of layer 202.Follow-up removal the second sacrifice layer 204
Afterwards, the Part I of first electrode 207 or second electrode 208 is perpendicular to barrier film 203 surface（Or substrate
200 surfaces）, Part II forms to Part I and supports, and, first electrode 207 or second electrode
Barrier film 203 table on Part II 22 top and side wall of 208 Part II and the first sacrifice layer 202
Face contacts, and contact area is larger, improves first electrode 207 or second electrode 208 and barrier film 203
Contact adhesion and mechanical strength, effectively prevent coming off of first electrode 207 or second electrode 208
Or deformation.
In other embodiments of the invention, described first electrode or second electrode include Part I and
Two parts, Part I is located at the both sides sidewall surfaces of the second sacrifice layer, and Part II is located at the first sacrifice
Layer Part II top and side wall on the surface of barrier film and the second sacrifice layer both sides suprabasil every
Film surface, further increases first electrode or second electrode contact adhesion and mechanical strength.
Then, refer to Fig. 9, remove described second sacrifice layer 204（With reference to Fig. 8）, in first electrode
Form the first cavity 209 between 207 and second electrode 208.
The technique removing described second sacrifice layer is dry or wet etch technique, in the embodiment of the present invention,
Remove described second sacrifice layer 204 using containing ammonia plasma treatment.
So that shape between first electrode 207 and second electrode 208 after removing described second sacrifice layer 204
Become the first cavity 209, first electrode 207 two ends positioned at raised barrier film relative with second electrode 208,
Compared to existing electric capacity two electrode runs parallel in the surface of substrate, first electrode 207 He in the present invention
Second electrode 208 is perpendicular to the surface of substrate 200, first electrode 207 and second electrode 208 bottom
The substrate 200 occupying surface area relatively small, thus the integrated level of device can be improved.
In other embodiments of the invention, described remove the second sacrifice layer 204 step planarization or
The back of etching substrate 200, is carried out after the first sacrifice layer 202 exposing etched hole bottom.
Finally, with reference to Figure 10 and Figure 11, planarize the back side of described substrate 200, until exposing etching
First sacrifice layer 202 in bottom hole portion；Remove described first sacrifice layer 202, formed in the bottom of barrier film 203
Second cavity 210；The bottom opening sealing described second cavity 210 is formed on the back side of substrate 200
Sealant 211.
Remove the Part I 21 of the first sacrifice layer 201（With reference to Fig. 8）After be correspondingly formed etched hole 201,
Remove the Part II 22 of the first sacrifice layer 201（With reference to Fig. 8）After be correspondingly formed the 3rd cavity 23, carve
Pit 201 and the 3rd cavity 23 constitute the second cavity 210.In the embodiment of the present invention, by substrate 200
Carry out thinning after, from the direction of barrier film 203 bottom remove the first sacrifice layer 202 so that barrier film 203 convex
Play part and keep integrity so that barrier film keeps stronger mechanical strength and can bear bigger pressure, carry
The high performance of capacitance pressure transducer.
The technique at the back side of planarization of substrates 200 is cmp, until exposing etched hole bottom
The first sacrifice layer 202.
In other embodiments of the invention it is also possible to the back side of etching substrate, form the second etched hole,
Second etched hole exposes the first sacrifice layer of etched hole bottom；First sacrifice is removed by the second etched hole
Layer, forms the second cavity.
Described sealant 211 is fine and close insulating dielectric materials, such as：SiN、SiON、SiCN、SiC、
BN or macromolecule resin etc..In the embodiment of the present invention, sealing is formed using low-pressure chemical vapor deposition process
Layer 211 is so that the environment in the second cavity 210 keeps low pressure.
In other embodiments of the invention, described sealant 211 can be silicon substrate, silicon nitrate substrate
Or silicon-Germanium substrate, sealant 211 and the back side of substrate 200 can be made to be bonded in one using bonding technology
Rise, thus closing the opening of the second cavity 210 lower end.Bonding technology can be anode linkage, glass paste
Material bonding and silicon direct bonding, low temperature eutectic bonding, metal spreads（Congruent melting is brilliant）Bonding etc..
Also include：Form control circuit and interconnection structure in other regions of described substrate 200（In figure is not
Illustrate）, first electrode 207 is connected with control circuit by interconnection structure with second electrode 208.Described control
Circuit processed is used for receiving, process and transmit the signal that electric capacity is exported.In the present embodiment, can be in substrate
Control circuit is formed on 200 Semiconductor substrate；Then dielectric layer, dielectric layer are formed on a semiconductor substrate
Constitute substrate 200 with Semiconductor substrate；Then make capacitance pressure transducer in the dielectric layer；Then again
Interconnection structure is made in dielectric layer, capacitance pressure transducer is adjacent with control circuit.
In other embodiments of the invention, can also be in the second substrate（Or second Semiconductor substrate）On
Form control circuit, after capacitance pressure transducer is formed, substrate 100 forms etched hole mutual
Link structure（Interconnection structure）, then will there is the substrate 100 of capacitance pressure transducer and there is control electricity
The substrate stacking on road, by etched hole interconnection structure（Interconnection structure）By control circuit and capacitive pressure
Sensor electrically connects.
After forming the second cavity 210, first electrode 207, second electrode 208 and the first cavity 209 structure
Become pressure sensing capacitance, when described barrier film 203 is being under pressure（Such as hydraulic pressure or air pressure etc.）Shi Huixiang
Deform above or downwards so that the distance between first electrode 207 and second electrode 208 increase or reduction,
The capacitance of pressure sensing capacitance changes, and control circuit receives pressure sensing capacitance output signal, and
Signal is processed, obtains pressure size and the direction that barrier film 203 is subject to.
The capacitance pressure transducer that above-mentioned direction is formed, refer to Figure 11, including：
Substrate 200, in substrate 200 and run through the etched hole 201 of its thickness；
Cover the barrier film 203 of described substrate 200 and etched hole 201, and the part of etched hole 201 top
Barrier film 203 raises up, and has the 3rd cavity 23 between the barrier film 203 raising up and substrate 200,
3rd cavity 23 and etched hole 201 constitute the second cavity 210；
Be located on raised barrier film 203 two ends relative to first electrode 207 and second electrode 208, the first electricity
There is between pole 207 and second electrode 208 first cavity 209；
Sealant 211 on the back side of substrate 200, sealant 211 seals the second cavity 210 lower end
Opening.
Specifically, the height of described 3rd cavity 23 is 0.1～10 micron, and width is 0.1～10000 micron,
The width of the 3rd cavity 23 is more than the width of etched hole 201.
Spacing between first electrode 207 and second electrode 208 is 0.1～10000 micron.
In the present embodiment, described first electrode 207 or second electrode 208 include Part I and second
Point, Part I is located at the both sides of the first cavity 209, and Part II is located at the bossing of barrier film 203
Top and sidewall surfaces.The Part I of first electrode 207 or second electrode 208 is perpendicular to barrier film 203
Surface（Or substrate 200 surface）, Part II forms to Part I and supports, and, first electrode 207
Or the Part II of second electrode 208 is contacted with the atop part of the bossing of barrier film and sidewall surfaces,
Contact area is larger, improves first electrode 207 or second electrode 208 contact with barrier film 203 is sticked
Property and mechanical strength, effectively prevent coming off or deforming of first electrode 207 or second electrode 208.
In other embodiments of the invention, described first electrode or second electrode include Part I and
Two parts, Part I is located at the both sides of the first cavity, and Part II is located at the portion of the bossing of barrier film
Divide top and sidewall surfaces, further increase first electrode or second electrode contact adhesion and machinery is strong
Degree.
Other regions of described substrate 200 also have control circuit and interconnection structure（In figure is not shown）, the
One electrode 207 is connected with control circuit by interconnection structure with second electrode 208.
The thickness of described barrier film 203 is 0.1～10 micron.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (20)
1. a kind of forming method of capacitance pressure transducer is it is characterised in that include：
Substrate is provided, described substrate forms etched hole；
Form the first sacrifice layer on the substrate, described first sacrifice layer includes filling the first of full etched hole
Part and the Part II of covering part substrate surface, Part I is located at immediately below Part II；
Barrier film is formed on described first sacrifice layer and substrate；
Second sacrifice layer is formed on portion septum, and described second sacrifice layer is located at the second of the first sacrifice layer
Upper；
The both sides sidewall surfaces of described second sacrifice layer form relative first electrode and second electrode, and
Described first electrode and second electrode part are located at membrane surface；
Remove described second sacrifice layer, form the first cavity between the first electrode and the second electrode；
Planarization or the back side etching described substrate, until expose the first sacrifice layer of etched hole bottom；
Remove described first sacrifice layer, form the second cavity in the bottom of barrier film；
The sealant of the bottom opening sealing described second cavity is formed on the back side of substrate.
2. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
Two sacrifice layer width are less than the width of the Part II of the first sacrifice layer, and the length of the second sacrifice layer is equal to
Or the length less than the first sacrifice layer Part II.
3. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
The thickness of the Part II of one sacrifice layer is 0.1～10 micron, the width of the Part II of the first sacrifice layer
For 0.1～10000 micron.
4. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
The forming process of one electrode and second electrode is：The side wall of described second sacrifice layer and surface and every
The surface of film forms electrode material layer；Mask layer, described mask layer are formed on described electrode material layer
Cover the electrode material layer on the second sacrifice layer both sides side wall and on portion septum；Remove not by mask layer
The electrode material layer covering, forms relative first in the both sides sidewall surfaces of described second sacrifice layer
Electrode and second electrode.
5. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
One electrode or second electrode include Part I and Part II, and Part I is located at the second sacrifice layer
Both sides sidewall surfaces, Part II be located at the first sacrifice layer the top of Part II and side wall on every
The surface of film.
6. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
One electrode or second electrode include Part I and Part II, and Part I is located at the second sacrifice layer
Both sides sidewall surfaces, Part II be located at the first sacrifice layer the top of Part II and side wall on every
The surface of film and the suprabasil membrane surface of the second sacrifice layer both sides.
7. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that first is electric
Spacing between pole and second electrode is 0.1～10000 micron.
8. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described quarter
The width of pit is less than the width of the first sacrifice layer Part II, and the depth of described etched hole is more than 50
Micron, width is 0.1～10000 micron.
9. the forming method of capacitance pressure transducer as claimed in claim 1 is it is characterised in that described
One sacrifice layer or the second sacrificial layer material are with respect to substrate, barrier film, first electrode and second electrode material
There is high etching selection ratio.
10. the forming method of capacitance pressure transducer as claimed in claim 9 is it is characterised in that described
The material of one sacrifice layer or the second sacrifice layer is bottom antireflective coating, polysilicon, amorphous silicon, no
Setting carbon, SiN, SiON, SiCN, SiC, BN, SiCOH or SiGe.
The forming method of 11. capacitance pressure transducers as claimed in claim 1 is it is characterised in that also include：
Control circuit and interconnection structure, the first electricity are formed on other regions of described substrate or other substrates
Pole is connected with control circuit by interconnection structure with second electrode.
The forming method of 12. capacitance pressure transducers as claimed in claim 1 it is characterised in that described every
The thickness of film is 0.1～10 micron.
A kind of 13. capacitance pressure transducers are it is characterised in that include：
Substrate, in substrate and run through the etched hole of its thickness；
Cover the barrier film of described substrate and etched hole, and the portion septum above etched hole raises up, to
There is between upper raised barrier film and substrate the 3rd cavity, the 3rd cavity and etched hole constitute the second cavity；
Be located on raised barrier film two ends relative to first electrode and second electrode, first electrode and second electrode
Between there is the first cavity；
Sealant on the back side of substrate, sealant seals the opening of the second cavity lower end.
14. capacitance pressure transducers as claimed in claim 13 are it is characterised in that the height of described 3rd cavity
Spend for 0.1～10 micron, width is 0.1～10000 micron.
15. capacitance pressure transducers as claimed in claim 13 it is characterised in that first electrode and second electricity
Spacing between pole is 0.1～10000 micron.
16. capacitance pressure transducers as claimed in claim 13 are it is characterised in that the width of described 3rd cavity
Degree is more than the width of etched hole.
17. capacitance pressure transducers as claimed in claim 13 are it is characterised in that described first electrode or
Two electrodes include Part I and Part II, Part I be located at the first cavity both sides, second
Divide the top of bossing being located at barrier film and sidewall surfaces.
18. capacitance pressure transducers as claimed in claim 13 are it is characterised in that described first electrode or
Two electrodes include Part I and Part II, Part I be located at the first cavity both sides, second
Divide the substrate of the bossing both sides of the top of bossing being located at barrier film and sidewall surfaces and barrier film
On.
19. capacitance pressure transducers as claimed in claim 13 are it is characterised in that other areas of described substrate
Control circuit and interconnection structure are also had on domain or the second substrate, first electrode and second electrode are passed through
Interconnection structure is connected with control circuit.
20. capacitance pressure transducers as claimed in claim 13 are it is characterised in that the thickness of described barrier film is
0.1～10 micron.
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| CN115655534A (en) * | 2022-10-31 | 2023-01-31 | 歌尔微电子股份有限公司 | Pressure sensor and method for manufacturing pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004147152A (en) * | 2002-10-25 | 2004-05-20 | Sanyo Electric Co Ltd | Acoustic sensor and method of manufacturing the same |
| CN101087999A (en) * | 2004-12-22 | 2007-12-12 | 罗伯特·博世有限公司 | Micromechanical capacitive sensor element |
| CN102768093A (en) * | 2011-05-04 | 2012-11-07 | Nxp股份有限公司 | MEMS capacitive pressure sensor, operating method and manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004147152A (en) * | 2002-10-25 | 2004-05-20 | Sanyo Electric Co Ltd | Acoustic sensor and method of manufacturing the same |
| CN101087999A (en) * | 2004-12-22 | 2007-12-12 | 罗伯特·博世有限公司 | Micromechanical capacitive sensor element |
| CN102768093A (en) * | 2011-05-04 | 2012-11-07 | Nxp股份有限公司 | MEMS capacitive pressure sensor, operating method and manufacturing method |
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