CN104418295A - Double-faced micro processing method for MEMS (micro-electromechanical system) and MEMS device - Google Patents
Double-faced micro processing method for MEMS (micro-electromechanical system) and MEMS device Download PDFInfo
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- CN104418295A CN104418295A CN201310382203.7A CN201310382203A CN104418295A CN 104418295 A CN104418295 A CN 104418295A CN 201310382203 A CN201310382203 A CN 201310382203A CN 104418295 A CN104418295 A CN 104418295A
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Abstract
The invention provides a double-faced micro processing method for MEMS (micro-electromechanical system) and an MEMS device. The double-faced micro processing method comprises the following steps: a step I of manufacturing a first alignment mark for a double-faced photoetching machine on a first surface of a substrate, and manufacturing a first pattern; a step II of manufacturing a second alignment mark for the double-faced photoetching machine on a second substrate, opposite to the first surface, of the substrate by utilizing the first alignment mark of the double-faced photoetching machine; and a step III of manufacturing a second pattern on the second surface, wherein the step I and/or the step II further comprises correspondingly forming a third alignment mark or a fourth alignment mark for a stepping photoetching machine on the first surface and/or the second surface, and manufacturing the corresponding first pattern and/or the second pattern by adopting a stepping photoetching machine mechanism. According to the double-faced micro processing method for the MEMS disclosed by the invention, the double-faced photoetching machine and the stepping photoetching machine are combined, so that the feature line width and overlay accuracy of the double-faced micro processing are improved.
Description
Technical field
The present invention relates to MEMS(Micro Electro Mechanical Systems) field, particularly, relate to a kind of two-sided micro-processing method for MEMS and MEMS.
Background technology
The two-sided micro-processing technology of MEMS is a kind of important micro-processing technology.At present, when needing all to make figure on the positive and negative two sides of substrate, generally double face photoetching machine is used.But, double face photoetching machine adopts proximity and contact exposure, namely by optical system, figure is projected on substrate with 1:1, need the size of mask plate identical with substrate, dimension of picture on mask plate and position also must be just the same with actual conditions, this makes the alignment precision of this method and characteristic line breadth all poor, and general alignment precision is 2-3 micron, and characteristic line breadth is greater than 3 microns.Meanwhile, dual surface lithography adopts hand contraposition, and the artificial factor (skilled operation degree etc.) easily by operating personnel affects, and then affects the stability and production capacity of producing.Although and current step photo-etching machine characteristic line breadth and alignment precision are all better, but can not carry out dual surface lithography, therefore all need to make figure for the positive and negative two sides of substrate, step photo-etching machine has certain limitation.
Therefore, the MEMS a kind of two-sided micro-processing method for MEMS being provided and being made by the method is necessary, to solve the problems of the prior art.
Summary of the invention
According to an aspect of the present invention, a kind of two-sided micro-processing method for MEMS is provided.Described method comprises: step 1: on the first surface of substrate, make the first alignment mark being used for double face photoetching machine, and make the first figure; Step 2: utilize described first alignment mark being used for double face photoetching machine to make the second alignment mark being used for double face photoetching machine at the second surface relative with described first surface of described substrate; And step 3: on described second surface, make second graph, wherein, in described step 1 and/or described step 2, also comprise the 3rd alignment mark and/or the 4th alignment mark that are correspondingly also formed on described first surface and/or described second surface for step photo-etching machine, make described first figure and/or described second graph accordingly to adopt stepper.
Preferably, comprising in described step 1 adopts step photo-etching machine to make on the first surface for described 3rd alignment mark of step photo-etching machine and described first alignment mark for double face photoetching machine, and adopts described step photo-etching machine to utilize described 3rd alignment mark to make described first figure on the first surface.
Further preferably, comprising employing double face photoetching machine in described step 3 utilizes described second alignment mark to make described second graph at described second surface.
Further preferably, in described step 2, utilize double face photoetching machine on described second surface, only make described second alignment mark for double face photoetching machine.
Preferably, comprise in described step 1 and adopt double face photoetching machine to make described first alignment mark for double face photoetching machine at described first surface, and utilize described first alignment mark to make described first figure.
Preferably, comprise employing double face photoetching machine in described step 2 to make for described 4th alignment mark of step photo-etching machine and described second alignment mark for double face photoetching machine at described second surface.
Preferably, comprising employing step photo-etching machine in described step 3 utilizes described 4th alignment mark to make described second graph at described second surface.
Preferably, described substrate comprises Semiconductor substrate and glass.
According to another aspect of the present invention, a kind of MEMS is also provided.Described device comprises: substrate, and described substrate comprises first surface and the second surface relative with described first surface; First figure and second graph, described first figure is formed on the first surface, and described second graph is formed on described second surface; For the first alignment mark and second alignment mark of double face photoetching machine, described first alignment mark is formed on the first surface, and described second alignment mark is formed on described second surface; For the alignment mark of step photo-etching machine, it is formed on described first surface and/or described second surface, makes described first figure and/or described second graph correspondingly to adopt described step photo-etching machine.
Two-sided micro-processing method for MEMS according to the present invention according to the present invention adopts double face photoetching machine and step photo-etching machine to combine, and substantially increases two-sided micro-machined characteristic line breadth and alignment precision.Greatly reduce the impact of human factor simultaneously, improve the stability of production.
In summary of the invention, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Content part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
Below in conjunction with accompanying drawing, describe advantages and features of the invention in detail.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the present invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the schematic flow sheet of two-sided according to an embodiment of the invention micro-processing method;
Fig. 2-Fig. 4 is respectively the structural representation of the device formed in each stage according to the two-sided micro-processing method shown in Fig. 1;
Fig. 5 is the schematic flow sheet of two-sided in accordance with another embodiment of the present invention micro-processing method;
Fig. 6-Fig. 8 is respectively the structural representation of the device formed in each stage according to the two-sided micro-processing method shown in Fig. 5;
Fig. 9 is the schematic flow sheet of the two-sided micro-processing method according to another embodiment of the present invention; And
Figure 10-12 is respectively the structural representation of the device formed in each stage according to the two-sided micro-processing method shown in Fig. 9.
Detailed description of the invention
Next, by reference to the accompanying drawings the present invention will more intactly be described, shown in the drawings of embodiments of the invention.But the present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other elements or layer time, its can directly on other elements or layer, with it adjacent, connect or be coupled to other elements or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other elements or layer time, then there is not element between two parties or layer.In the accompanying drawings, for the sake of clarity, the size in Ceng He district and relative size may be exaggerated.And use the element that identical Reference numeral represents identical.
According to an aspect of the present invention, a kind of two-sided micro-processing method for MEMS is provided.The method realizes two-sided micro Process in conjunction with double face photoetching machine and step photo-etching machine.This two-sided micro-processing method comprises the following steps:
First, the first surface of substrate makes the first alignment mark being used for double face photoetching machine, and makes the first figure;
Secondly, utilize the first alignment mark being used for double face photoetching machine to make at the second surface of substrate the second alignment mark being used for double face photoetching machine, wherein second surface is relative with first surface;
Then, second graph is made on a second surface.
Wherein, in step 1 and/or step 2, also comprise the 3rd alignment mark and/or the 4th alignment mark that are correspondingly also formed on first surface and/or second surface for step photo-etching machine, make corresponding first figure and/or second graph to adopt stepper.In corresponding step, at least one of first surface in sight and second surface makes and is used for the alignment mark of step photo-etching machine, so as to utilize this alignment mark first surface and second surface at least one on utilize step photo-etching machine to make corresponding figure.
Preferably, above-mentioned substrate can be Semiconductor substrate, also can be glass substrate, to be applied to different concrete structures.
Below in conjunction with different embodiments of the invention, this two-sided micro-processing method is described in detail.
[embodiment 1]
Fig. 1 shows the schematic flow sheet of two-sided according to an embodiment of the invention micro-processing method.Fig. 2-Fig. 4 is respectively the structural representation of the device formed in each stage according to the two-sided micro-processing method shown in Fig. 1.Method according to Fig. 1 finally can form MEMS according to an embodiment of the invention 100 as shown in Figure 4.The technical process of embodiment 1 is described in detail below in conjunction with Fig. 1-Fig. 4.
Step S110, adopt step photo-etching machine to make on the first surface 111 of substrate 110 and be used for the 3rd alignment mark 115 of step photo-etching machine and the first alignment mark 113 for double face photoetching machine, and adopt step photo-etching machine to utilize the 3rd alignment mark 115 on first surface 111, make the first figure 117, form device architecture as shown in Figure 2.Now, the first surface 111 of substrate 110 is not only formed with the first alignment mark 113 for double face photoetching machine, is also formed with the 3rd alignment mark 115 for step photo-etching machine.
Adopting step photo-etching machine to make the 3rd alignment mark 115 and the first alignment mark 113 can adopt such as following method to carry out: first preparation example is as the hybrid mask version alignment mark of two kinds of alignment marks of × 5 times, and adopts step photo-etching machine to carry out photoetching process to make two kinds of alignment marks.The specific embodiment adopting step photo-etching machine to carry out photoetching process can make the technical process of the first figure 117 with reference to the employing step photo-etching machine next will introduced.
Utilize step photo-etching machine to make the first figure 117 at the first surface 111 of substrate 110 mainly can comprise: form the several step of material layer to be etched, gluing, exposure, development and etching.First need before gluing to clean first surface 111, processed, to remove the pollutant on surface, such as particle, organic matter and technique are remaining.In addition, in order to strengthen the adhesion on surface, HMDS (HMDS) can also be utilized to carry out film forming process.Afterwards at first surface spin coating one deck photoresist.Usually, soft baking process can also be carried out to the photoresist being spun to first surface, to remove the solvent in photoresist, thus improve the adhesion of photoresist to substrate surface and the uniformity of photoresist.The exposure of step photo-etching machine adopts projection exposure, and it utilizes lens or speculum by the graphic projection on mask plate on substrate.Figure on mask is reduced by optical principle, and focuses on photoresist.Its reduce in scale can design according to actual conditions, such as, can be 10:1 or 5:1 etc.Step photo-etching machine adopts regional exposure mode, namely may have dozens of exposure region on one substrate, each only to an exposure region exposure, exposes, until all exposure regions complete exposure after previous exposure region end exposure to next exposure region again.Step photo-etching machine is adopted to make characteristic line breadth and the alignment precision that the first figure 117 can improve the first figure 117 greatly.Generally, its characteristic line breadth and registration error can be less than 0.5 μm.Then through developing process remove surface photoresist layer, with by the design transfer on mask plate to photoresist layer.Finally, treat etachable material layer with the figuratum photoresist layer of tool for grinding to etch, to form the first figure.
Secondly, step S120, utilize first alignment mark 113 for double face photoetching machine of first surface 111 on the second surface 112 of substrate 110, make the second alignment mark 114 for double face photoetching machine and the 4th alignment mark 116 for step photo-etching machine, form structure as shown in Figure 3.Now, the second surface 112 of substrate 110 is formed with the second alignment mark 114 for double face photoetching machine and the 4th alignment mark 116 for step photo-etching machine.4th alignment mark 116 will when next adopting step photo-etching machine to make second graph 118 as alignment mark.
Finally, step S130, adopts step photo-etching machine to utilize the 4th alignment mark 116 to make second graph 118 at second surface 112, forms structure as shown in Figure 4.
Adopt step photo-etching machine can make the step of the first figure 117 in refer step 1 in the concrete steps that second surface 112 makes second graph 118, repeat no more for simplicity here.Equally, adopt step photo-etching machine to make second graph 118 also greatly to reduce characteristic line breadth and improve alignment precision.
In fact, owing to having made the second alignment mark 114 for double face photoetching machine and the 4th alignment mark 116 for step photo-etching machine by double face photoetching machine at second surface 112 in the step s 120, therefore, in other embodiments unshowned according to the present invention, if in the less demanding situation of second graph 118 pairs of characteristic line breadths, except selecting to adopt step photo-etching machine and making, double face photoetching machine can also be adopted to utilize the second alignment mark 114 to make second graph 118.In addition, the subregion that two kinds of simultaneous situations of alignment mark are also applicable on second surface adopts step photo-etching machine, and another part region adopts double face photoetching machine.Therefore, the litho machine that the actual conditions choose reasonable of the device that the program can also make as required is suitable, production cost and graphical effect obtain an optimized effect.
For some MEMS, as above, if the requirement of the figure on one of them surface to characteristic line breadth is high, and figure on another surface not high to the requirement of characteristic line breadth when, characteristic line breadth is required that high figure can adopt step photo-etching machine to make, and for the less demanding figure of characteristic line breadth, double face photoetching machine can be adopted to make.Therefore, in practice, on the surface can for the preparation of the alignment mark of litho machine unlike described in embodiment 1 for adopting double face photoetching machine to make that of figure, its manufacture craft correspondingly simplifies.For above-mentioned situation, high figure can be required (such as to characteristic line breadth and alignment precision as embodiment 2 first adopts step photo-etching machine to make, first figure 117), and then adopt double face photoetching machine making to require low figure (such as, second graph 118) to characteristic line breadth and alignment precision.Equally, also low figure can be required (such as embodiment 3 first adopts double face photoetching machine to make to characteristic line breadth and alignment precision, first figure 117), and then adopt step photo-etching machine to make figure (such as, second graph 118) that is high to characteristic line breadth requirement and alignment precision.Respectively the present invention is described below in conjunction with Fig. 5-Figure 12.
[embodiment 2]
Fig. 5 shows the schematic flow sheet of two-sided in accordance with another embodiment of the present invention micro-processing method.Fig. 6-Fig. 8 is respectively the structural representation of the device formed in each stage according to the two-sided micro-processing method shown in Fig. 5.Method according to Fig. 5 finally can form MEMS according to an embodiment of the invention 200 as shown in Figure 8.The technical process of embodiment 2 is described in detail below in conjunction with Fig. 5-Fig. 8.
First, step S210, adopt step photo-etching machine to make on the first surface 111 of substrate 110 and be used for the 3rd alignment mark 115 of step photo-etching machine and the first alignment mark 113 for double face photoetching machine, and adopt step photo-etching machine to utilize the 3rd alignment mark 115 on first surface 111, make the first figure 117, form device architecture as shown in Figure 6.The concrete grammar forming the first figure 117 and the 3rd alignment mark 115 and the first alignment mark 113 see the description of the first embodiment appropriate section, for simplicity, can repeat no more here.
Secondly, step S220, utilizes the first alignment mark 113 being used for double face photoetching machine only to make the second alignment mark 114 being used for double face photoetching machine at the second surface 112 of substrate 110, forms device architecture as shown in Figure 7.Due in this embodiment, second graph 118 pairs of characteristic line breadths of second surface 112 and the less demanding of alignment precision, therefore can adopt double face photoetching machine to make second graph 118.Now, second surface 112 only can make the second alignment mark 114 for double face photoetching machine.Due to the 4th alignment mark 116(Fig. 3-Fig. 4 for step photo-etching machine in embodiment 1 need not be made), therefore can process simplification.
Finally, step S230, adopts double face photoetching machine to utilize the second alignment mark 114 being used for double face photoetching machine to make second graph 118 on second surface 112, forms device architecture as shown in Figure 8.Equally, this step S230 with reference to description above, for simplicity, can repeat no more here.
[embodiment 3]
As shown in Figure 9, step S310, adopts double face photoetching machine to make the first alignment mark 113 being used for double face photoetching machine at first surface 111, and utilizes the first alignment mark 113 to make the first figure 117, form device architecture as shown in Figure 10.Its concrete technical process about the description utilizing double face photoetching machine to make figure in reference example 1, for simplicity, no longer can describe here.The first surface of the device formed by step S310 is only formed with the first figure and the first alignment mark 113 for double face photoetching machine.Therefore, do not need to make the alignment mark for step photo-etching machine, simplify technical process.
Step S320, adopt double face photoetching machine to utilize the first alignment mark 113 for double face photoetching machine to make for the second alignment mark 114 of double face photoetching machine and the 4th alignment mark 116 for step photo-etching machine at the second surface 112 of substrate 110, form device architecture as shown in figure 11.
In the present embodiment, the requirement of the second graph 118 pairs of characteristic line breadths on second surface 112 is higher, and it needs to adopt step photo-etching machine to make.Therefore in step s 320 except needing to make for except making the second alignment mark 114 of the figure on first surface 111 and the pattern alignment on second surface 112, also need to make the second alignment mark 116 for step photo-etching machine, adopt step photo-etching machine to make second graph 118 for next step and use.Its concrete technical process can description in reference example 1, for simplicity, no longer describes in detail here.
Step S330, adopts step photo-etching machine to utilize the 4th alignment mark 116 being used for step photo-etching machine to make second graph 118 on second surface 112, forms MEMS 300 as shown in figure 12.
The characteristic line breadth of second graph 118 requires high, therefore needs to adopt step photo-etching machine to make second graph 118, with the requirement enabling made figure meet characteristic line breadth.
According to another aspect of the present invention, a kind of MEMS is also provided.Fig. 4, Fig. 8 and Figure 12 respectively illustrate the MEMS 100,200 and 300 according to different embodiments of the invention.As shown in the figure, MEMS 100,200 and 300 comprises substrate 110, and this substrate 110 comprises first surface 111 and the second surface 112 relative with first surface 111.MEMS 100,200 and 300 also comprises the first figure 117 be formed on first surface 111 and the second graph 118 be formed on second surface 112.MEMS 100,200 and 300 also comprises the first alignment mark 113 and the second alignment mark 114 for double face photoetching machine.Wherein the first alignment mark 113 is formed on first surface 111, and the second alignment mark 114 is formed on second surface 112.In addition, MEMS structure also comprises the alignment mark for step photo-etching machine, and it is formed on first surface 111 and/or second surface 112, makes the first figure 117 and/or second graph 118 correspondingly to adopt step photo-etching machine.Step photo-etching machine can be adopted to make according at least one in the first figure 117 on the first surface 111 of MEMS of the present invention and the second graph 118 on second surface 112, improve alignment precision and characteristic line breadth.
Two-sided micro-processing method for MEMS according to the present invention adopts double face photoetching machine and step photo-etching machine to combine, and substantially increases two-sided micro-machined characteristic line breadth and alignment precision.Greatly reduce the impact of human factor simultaneously, improve the stability of production.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (9)
1. for a two-sided micro-processing method of MEMS, it is characterized in that, described method comprises:
Step 1: make the first alignment mark being used for double face photoetching machine on the first surface of substrate, and make the first figure;
Step 2: utilize described first alignment mark being used for double face photoetching machine to make the second alignment mark being used for double face photoetching machine at the second surface relative with described first surface of described substrate; And
Step 3: make second graph on described second surface,
Wherein, in described step 1 and/or described step 2, also comprise the 3rd alignment mark and/or the 4th alignment mark that are correspondingly also formed on described first surface and/or described second surface for step photo-etching machine, make described first figure and/or described second graph accordingly to adopt stepper.
2. two-sided micro-processing method as claimed in claim 1, it is characterized in that, comprising in described step 1 adopts step photo-etching machine to make on the first surface for described 3rd alignment mark of step photo-etching machine and described first alignment mark for double face photoetching machine, and adopts described step photo-etching machine to utilize described 3rd alignment mark to make described first figure on the first surface.
3. two-sided micro-processing method as claimed in claim 2, is characterized in that, comprises adopt double face photoetching machine to utilize described second alignment mark to make described second graph at described second surface in described step 3.
4. two-sided micro-processing method as claimed in claim 3, is characterized in that, utilizes double face photoetching machine on described second surface, only make described second alignment mark for double face photoetching machine in described step 2.
5. two-sided micro-processing method as claimed in claim 1, it is characterized in that, comprising in described step 1 adopts double face photoetching machine to make described first alignment mark for double face photoetching machine at described first surface, and utilizes described first alignment mark to make described first figure.
6. the two-sided micro-processing method as described in claim 2 or 5, it is characterized in that, comprise in described step 2 and adopt double face photoetching machine to make for described 4th alignment mark of step photo-etching machine and described second alignment mark for double face photoetching machine at described second surface.
7. two-sided micro-processing method as claimed in claim 6, is characterized in that, comprises adopt step photo-etching machine to utilize described 4th alignment mark to make described second graph at described second surface in described step 3.
8. two-sided micro-processing method as claimed in claim 1, is characterized in that, described substrate comprises Semiconductor substrate and glass.
9. a MEMS, is characterized in that, described device comprises:
Substrate, described substrate comprises first surface and the second surface relative with described first surface;
First figure and second graph, described first figure is formed on the first surface, and described second graph is formed on described second surface;
For the first alignment mark and second alignment mark of double face photoetching machine, described first alignment mark is formed on the first surface, and described second alignment mark is formed on described second surface;
For the alignment mark of step photo-etching machine, it is formed on described first surface and/or described second surface, makes described first figure and/or described second graph correspondingly to adopt described step photo-etching machine.
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| WO2023083000A1 (en) * | 2021-11-12 | 2023-05-19 | 同方威视技术股份有限公司 | Manufacturing method for terahertz detection apparatus, and detection device |
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