CN104411864B - 用于沉积材料的制造设备和用于其中的托座 - Google Patents
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Abstract
本发明涉及一种制造设备,所述制造设备将材料沉积在承载体上。所述制造设备包括壳体,所述壳体限定腔室。所述壳体限定入口以用于将包含所述材料或其前体的沉积组合物引入所述腔室。所述壳体还限定出口,所述出口穿过所述壳体以用于从所述腔室排出所述沉积组合物。电极穿过所述壳体而设置,其中所述电极至少部分地设置在所述腔室内。托座具有外表面并连接到所述腔室内的所述电极以用于接纳所述承载体。剥离涂层设置在所述托座的所述外表面上以促进所述托座与所述承载体及其上沉积的所述材料的分离,从而收获所述承载体。
Description
技术领域
本发明涉及一种用于将材料沉积在承载体上的制造设备。更具体地讲,本发明涉及一种在制造设备内支撑承载体的托座。
发明背景
用于将材料沉积在承载体上的制造设备在本领域中是已知的。常规制造设备包括托座,其设置在承载体的末端用于将承载体联接到在所述常规制造设备内的电极。然而,当将材料沉积在承载体上时,该材料也可沉积在托座上。例如,材料可直接沉积在托座上。或者,当将材料沉积在承载体上时,该材料可生长并扩展而包围托座的一部分。
一旦将所需量的材料沉积在承载体上后,即通过从常规制造设备移除承载体而收获所述承载体。随后,必须将托座与承载体分离,并且更具体地讲,必须将托座与沉积在承载体上的材料分离。通常,通过敲击托座附近或托座上的沉积材料以使沉积材料破裂而使托座与承载体及沉积材料分离。敲击沉积材料以将其移除的过程非常费时且成本高昂。另外,甚至在破裂后,一些沉积材料仍留在托座上。使托座上的沉积材料经受更猛烈的过程来分离沉积材料与托座。遗憾的是,该猛烈过程降低与托座分离的沉积材料的纯度,从而降低托座上的沉积材料的价值。因此,仍然需要在不降低沉积材料的纯度以保留沉积材料的价值的情况下使沉积材料与托座分离。
发明内容
制造设备将材料沉积在承载体上。所述制造设备包括壳体,所述壳体限定腔室。所述壳体限定入口以用于将包含所述材料或其前体的沉积组合物引入所述腔室。所述壳体还限定出口,所述出口穿过所述壳体以用于从所述腔室排出所述沉积组合物。电极穿过所述壳体而设置,其中所述电极至少部分地设置在所述腔室内。托座具有外表面并连接到所述腔室内的所述电极以用于接纳所述承载体。剥离涂层设置在所述托座的所述外表面上以促进所述托座与所述承载体及其上沉积的所述材料的分离,从而收获所述承载体。因此,可直接沉积在托座上的材料不必经受另外的分离过程以使沉积材料与托座分离,从而维持所述材料的纯度。
附图说明
将易于认识到本发明的其他优点,因为结合附图考虑时,通过参考以下具体实施方式可更好地理解相同内容,其中:
图1是用于将材料沉积在包括电极的承载体上的制造设备的剖视图,其中所述制造设备包括罐和基板;
图2是制造设备的一部分的放大视图,显示了邻近基板的罐;
图3是制造设备中所用的电极的透视图;
图4是沿图3中的线4-4截取的电极的一部分的剖视图,其中托座联接到所述电极;以及
图5是联接到承载体的托座的可供选择的实施例的剖视图。
具体实施方式
参见各图,其中在若干视图中,类似的数字表示类似或相应的部分,显示了用于将材料12沉积在承载体14上的制造设备10。换句话讲,在制造设备10的操作期间,将材料12沉积在承载体14上。例如,制备设备10可以为化学气相沉积反应器,诸如西门子(Siemens)型化学气相沉积反应器,用于将硅沉积到承载体14上以制备高纯度多晶硅。如西门子法(Siemens Method)所已知的是,承载体14可具有如图1所示的基本上U形的构型。然而,应当理解承载体14可具有除U形构型之外的构型。另外,当待沉积的材料12为硅时,承载体14通常为包含高纯度硅的细硅棒。硅沉积在细硅棒上以产生高纯度多晶硅。
参见图1,制造设备10包含壳体16。壳体16包括罐18和基板20。罐18联接至基板20以形成壳体16。壳体16的罐18具有至少一个壁22,其中壁22通常呈现壳体16的圆柱形构型。然而,应当理解壳体16的罐18可具有除圆柱形之外的构型,诸如立方构型。壳体16限定腔室24。更具体地讲,壳体16的罐18具有中空内部,以使得罐18的壁22限定腔室24。罐18具有敞开的末端26以允许通向腔室24。基板20联接至罐18的敞开末端26,以盖住罐18的末端26并密封腔室24。
壳体16限定入口28,以用于将包含待沉积的材料12或其前体的沉积组合物引入腔室24。类似地,壳体16可限定出口30,以允许将沉积组合物或其反应副产物从腔室24排出。应当理解,入口28和/或出口30可由壳体16的罐18或基板20限定。通常,入口管32连接到入口28以将沉积组合物输送到腔室24而排出管34连接到出口30以从腔室24移除沉积组合物或其反应副产物。
参见图2,壳体16可包括凸缘36,其从壳体16的壁22延伸。更具体地讲,凸缘36从壳体16的壁22横向延伸。通常,当基板20联接到壳体16时,凸缘36平行于基板20。可使用诸如螺栓的紧固件38将壳体16的凸缘36紧固至基板20。
基板20可限定凹槽40。凹槽40围绕基板20的周边而限定。另外,壳体16的凸缘36可具有从凸缘36延伸出的指状物42以接合基板20的凹槽40。凸缘36的指状物42与基板20的凹槽40的接合确保了在将壳体16联接到基板20时基板20与壳体16适当地对齐。一般来讲,凸缘36与基板20之间的机械相互作用不足以防止沉积组合物从腔室24逸出。另外,凸缘36与基板20之间的机械相互作用通常不足以防止腔室24外部的杂质(诸如腔室24外的环境大气中的杂质)进入腔室24。因此,制造设备10还可以包括设置在基板20与罐18之间的垫圈44,以密封介于罐18与基板20之间的腔室24。另外,凸缘36的指状物42与基板20的凹槽40之间的机械相互作用防止罐18随着腔室24内压力的升高而发生侧向位移。
再次参见图1,制造设备10包括穿过壳体16设置的电极46。电极46至少部分地设置在腔室24内。例如,电极46通常穿过基板20而设置,其中电极46的一部分支撑腔室24内的承载体14。在图3中所示的—个实施例中,电极46包括轴48和设置在轴48末端的头部50。在这样的实施例中,头部50设置在腔室24内以支撑承载体14。
参见图1和图4,托座52连接到腔室24内的电极46以接纳承载体14。换句话讲,托座52将承载体14与电极46分开。应当理解,本领域的技术人员还可以将托座52称为卡盘或多卡盘(poly chuck)。如图4中最佳地示出,电极46且具体地讲电极46的头部50可限定用于接纳托座52的杯54。因而,托座52可至少部分地设置在杯54内以将托座52连接到电极46。
通常,电极46包含导电材料12,诸如铜、银、镍、铬镍铁合金(Inconel)、金及其组合。在腔室24内,通过使电流通过电极46来加热电极46。通常,托座52包含石墨,这是因为石墨足够刚硬以将承载体14稳固地安装到电极46且为导电的以将电流从电极46传导至承载体14中。
由于电流从电极46经由托座52传至承载体14,所以承载体14通过称为焦耳加热的过程加热至沉积温度。将承载体14加热至沉积温度一般有助于沉积组合物的热分解。如上文所提及,沉积组合物包含待沉积在承载体14上的材料12或其前体。因此,沉积组合物的热分解使得材料12沉积在经加热的承载体14上。例如,当待沉积的材料12为硅时,沉积组合物可包含卤硅烷,诸如氯硅烷或溴硅烷。然而,应当理解沉积组合物可包含其他前体,尤其是含硅分子,诸如硅烷、四氯化硅、三溴硅烷和三氯硅烷。还应当理解,制造设备10可用于将硅之外的材料12沉积在承载体14上。
如上文所介绍,托座52通过通电流而加热且可被加热到沉积温度。因而,材料12也可直接沉积在托座52上。或者,随着材料12沉积在承载体14上且大小增加,材料12可迁移到托座52上。一旦足量的材料12沉积在承载体14上后,即通过从制造设备10移除承载体14而从制造设备10收获承载体14。通常,材料12在托座52和/或承载体14上的沉积使得托座52通过材料12粘附至承载体14。换句话讲,直接沉积在托座52上的材料12和/或从承载体14生长到托座52上的材料12防止托座52与承载体14分离。托座52必须与承载体14和/或材料12分离以收获材料12。另外,直接沉积在托座52上的材料12也必须与托座52分离。
一般来讲,托座52具有第一末端56和第二末端58以及介于第一末端56与第二末端58之间的外表面60。一般来讲,第一末端56连接到电极46而第二末端58接纳承载体14。虽然并非必需,但通常而言,使托座52的末端56、58成锥形,以有利于一旦从制造设备10收获承载体14后,承载体14及其上沉积的材料12便与托座52分离。也使托座52成锥形以使电流集中到承载体14中。
为了有利于使托座52与直接在托座52本身或承载体14上的材料12分离,将剥离涂层62设置在托座52的外表面60上。剥离涂层62促进托座52与材料12的分离。换句话讲,剥离涂层62促进直接在托座52本身上或在托座52附近的承载体14上沉积的材料12的剥离。因而,剥离涂层62促进托座52与承载体14及其上沉积的材料12的分离,以允许收获承载体14。因此,因为剥离涂层62促进托座52从承载体14剥离,所以在材料12沉积到承载体14上之后,托座52可容易地与承载体14分离。因而,承载体14和/或托座52上沉积的材料12不必经历可能污染材料12的另外分离过程。防止材料12受到污染维持了材料12的高纯度。维持材料12的高纯度,尤其是当材料12为硅时,意味着材料12对于销售给末端26使用者更有价值。
一般来讲,通过使材料12破裂而将材料12与托座52分离。破裂可通过物理敲击材料12以使其碎裂成大块脱离托座52而发生。基于托座52上剥离涂层62的初始晶体生长结构来选择剥离涂层62以产生弱点,从而使得材料12容易地与托座52分离。选择剥离涂层62以使得剥离涂层62的初始晶体生长不同于承载体14上所沉积的材料12的晶体生长结构。不同的晶体生长结构产生使沉积的材料12可与剥离涂层62分离的弱点。通常,剥离涂层62选自碳化硅、氮化硅、热解碳、石墨碳化硅、二氧化硅、碳化钽、碳化铌及其组合。更通常地,剥离涂层62为热解碳。
另外,剥离涂层62提供比托座52的外表面60更平滑的修整表面64。通过提供更平滑的表面,粘附到托座52上的材料12的表面积较小,这促进材料12从托座52剥离。剥离涂层62的修整表面64的表面粗糙度RA值通常为约1至约100微米,更通常为约25至约50微米,甚至更通常为约30至40微米。应当理解,除了提供比托座52的外表面60更平滑的修整表面64以外,也可以其他方式减小托座52的表面积。例如,可增加托座52的长度,同时减小托座52的直径以减小表面积,如图5中所示。另外,可减小托座的长度,同时增加托座52的直径。还应当理解,改变托座52的长度和/或直径以减小托座52的表面积的做法可与剥离涂层62结合使用。
虽然剥离涂层62促进托座52与材料12分离,但剥离涂层62仍必须提供足够的热导率以充分加热承载体14。因而,剥离涂层62的热导率通常为约80至130,更通常为约90至125,甚至更通常为约100至120W/m K。
剥离涂层62的厚度取决于选择用于剥离涂层62的材料。例如,当剥离涂层62为碳化硅时,剥离涂层62的厚度小于约100微米。当剥离涂层62为氮化硅、碳化钽或碳化铌时,剥离涂层62的厚度小于约75微米。当剥离涂层62为热解碳时,剥离涂层62的厚度小于约50微米。当剥离涂层62为石墨碳化硅时,剥离涂层62的厚度小于约40微米。
应当理解,就U形承载体14而言,制造设备10可包括多个电极46以及用于支撑多个承载体或承载体14的多个末端的托座52。例如,制造设备10可包括第一电极46A与连接到第一电极46A的第一托座52A以及第二电极46B与连接到第二电极46B的第二托座52B。第一电极46A和第二电极46B为彼此的镜像且类似于上述电极46。同样地,第一托座52A和第二托座52B为彼此的镜像且类似于上述托座52。
现在将描述一种将材料12沉积在承载体14上的方法。该方法包括将剥离涂层62施加在托座52的外表面60上的步骤,以在将材料12沉积到承载体14上之后,促进承载体14及其上沉积的材料12从托座52的剥离。施加剥离涂层62的步骤可通过多种方法实现,诸如通过CVD和CVR工艺。所选择的工艺取决于用作剥离涂层62的材料。例如,施加剥离涂层62的步骤还可定义为使托座52接受低压/高温CVD工艺以将碳化硅或石墨碳化硅混合物沉积在托座52的外表面60上作为剥离涂层62。另外,施加剥离涂层62的步骤还可定义为使托座52接受大气压/高温CVD工艺以将氮化硅沉积在托座52的外表面60上作为剥离涂层62。此外,施加剥离涂层62的步骤还可定义为使托座52接受高温CVD工艺以将热解碳沉积在托座52的外表面60上作为剥离涂层62。或者,施加剥离涂层62的步骤还可定义为使托座52接受CVR工艺以将碳化钽或碳化铌沉积在托座52的外表面60上作为剥离涂层62。
将材料12沉积在承载体14上的方法还包括将托座52连接到腔室24内的电极46并将承载体14连接到腔室24内的托座52的步骤。密封腔室24并将沉积组合物引入腔室24。在腔室24内加热承载体14,这使得诸如硅的材料12沉积在经加热的承载体14上。一旦材料12沉积在承载体14上后,即从腔室24收获承载体14。应当理解,收获承载体14的步骤还可定义为使托座52与承载体14及其上沉积的材料12分离。例如,从托座52移除材料12以使托座52从承载体14脱离。使托座52与承载体14分离的步骤可在腔室24内发生,以使得在移除承载体14时托座52留在腔室24中。或者,使托座52与承载体14分离的步骤可在从腔室24移除承载体14后就发生,以使得托座52与承载体14一起从腔室24移除。
显然,按照上面的教导内容,本发明的许多修改形式和变型形式是可能的。上述发明已根据相关法律标准进行描述;因此,所述描述就其本质而言是示例性的,而非限制性的。针对已公开的实施例的变型形式和修改形式对于本领域的技术人员是显而易见的并从属于本发明的范围。因此,给予本发明的法律保护范围可仅通过研读以下权利要求书来确定。
Claims (21)
1.一种将材料沉积在承载体上的制造设备,所述设备包括:
壳体,所述壳体限定腔室;
入口,所述入口由所述壳体限定以用于将包含所述材料或其前体的沉积组合物引入所述腔室;
出口,所述出口穿过所述壳体而限定以用于从所述腔室排出所述沉积组合物;
电极,所述电极穿过所述壳体而设置,其中所述电极至少部分地设置在所述腔室内;
托座,所述托座具有外表面并连接到所述腔室内的所述电极以用于接纳所述承载体;以及
剥离涂层,所述剥离涂层设置在所述托座的所述外表面上以促进所述托座与所述承载体及其上沉积的所述材料的分离,从而收获所述承载体,其中所述剥离涂层呈现所述托座的修整表面,所述修整表面的表面粗糙度RA值为1至100微米,所述剥离涂层的所述修整表面的表面粗糙度RA值小于所述托座的所述外表面的表面粗糙度RA值。
2.根据权利要求1所述的制造设备,其中所述托座包含石墨。
3.根据权利要求1所述的制造设备,其中沉积在所述承载体上的所述材料为硅。
4.根据权利要求2所述的制造设备,其中沉积在所述承载体上的所述材料为硅。
5.根据权利要求1所述的制造设备,其中所述剥离涂层选自下组:碳化硅、氮化硅、热解碳、石墨碳化硅、二氧化硅、碳化钽、碳化铌及其组合。
6.根据权利要求2所述的制造设备,其中所述剥离涂层选自下组:碳化硅、氮化硅、热解碳、石墨碳化硅、二氧化硅、碳化钽、碳化铌及其组合。
7.根据权利要求3所述的制造设备,其中所述剥离涂层选自下组:碳化硅、氮化硅、热解碳、石墨碳化硅、二氧化硅、碳化钽、碳化铌及其组合。
8.根据权利要求4所述的制造设备,其中所述剥离涂层选自下组:碳化硅、氮化硅、热解碳、石墨碳化硅、二氧化硅、碳化钽、碳化铌及其组合。
9.根据权利要求1至8中任一项所述的制造设备,其中所述剥离涂层的厚度为40至100微米。
10.根据权利要求1至8中任一项所述的制造设备,其中所述电极还包括轴和头部,其中所述头部限定杯而所述托座设置在所述杯内以将所述托座连接到所述电极。
11.根据权利要求9所述的制造设备,其中所述电极还包括轴和头部,其中所述头部限定杯而所述托座设置在所述杯内以将所述托座连接到所述电极。
12.根据权利要求1至8中任一项所述的制造设备,其中所述电极还被限定为第一电极并且所述托座还被限定为第一托座,而所述制造设备还包括连接到第二电极的第二托座,所述第二电极设置在腔室中。
13.根据权利要求9所述的制造设备,其中所述电极还被限定为第一电极并且所述托座还被限定为第一托座,而所述制造设备还包括连接到第二电极的第二托座,所述第二电极设置在腔室中。
14.根据权利要求10所述的制造设备,其中所述电极还被限定为第一电极并且所述托座还被限定为第一托座,而所述制造设备还包括连接到第二电极的第二托座,所述第二电极设置在腔室中。
15.根据权利要求11所述的制造设备,其中所述电极还被限定为第一电极并且所述托座还被限定为第一托座,而所述制造设备还包括连接到第二电极的第二托座,所述第二电极设置在腔室中。
16.一种制造具有剥离涂层的托座的方法,其中所述托座与将材料沉积在承载体上的制造设备一起使用,所述制造设备包括壳体,所述壳体限定腔室;入口,所述入口穿过所述壳体而限定以用于将包含所述材料或其前体的沉积组合物引入所述腔室;出口,所述出口穿过所述壳体而限定以用于从所述腔室排出所述沉积组合物;电极,所述电极穿过所述壳体而设置,其中所述电极至少部分地设置在所述腔室内,而所述托座连接到所述腔室内的所述电极以用于接纳所述承载体;所述方法包括以下步骤:将所述剥离涂层施加在所述托座的外表面上以促进所述托座与所述承载体及其上沉积的所述材料的分离,从而收获所述承载体,其中所述剥离涂层呈现所述托座的修整表面,所述修整表面的表面粗糙度RA值为1至100微米,所述剥离涂层的所述修整表面的表面粗糙度RA值小于所述托座的所述外表面的表面粗糙度RA值。
17.根据权利要求16所述的方法,其中施加所述剥离涂层的所述步骤还被限定为使所述托座接受低压/高温CVD工艺,以将碳化硅或石墨碳化硅混合物沉积在所述托座的所述外表面上作为所述剥离涂层。
18.根据权利要求16所述的方法,其中施加所述剥离涂层的所述步骤还被限定为使所述托座接受大气压/高温CVD工艺,以将氮化硅沉积在所述托座的所述外表面上作为所述剥离涂层。
19.根据权利要求16所述的方法,其中施加所述剥离涂层的所述步骤还被限定为使所述托座接受CVR工艺,以将碳化钽或碳化铌沉积在所述托座的所述外表面上作为所述剥离涂层。
20.一种将材料沉积在制造设备的腔室内的承载体上的方法,其中所述制造设备包括壳体,所述壳体限定所述腔室;入口,所述入口穿过所述壳体而限定;出口,所述出口穿过所述壳体而限定以用于从所述腔室排出沉积组合物;电极,所述电极穿过所述壳体而设置,其中所述电极至少部分地设置在所述腔室内;以及托座,所述托座连接到所述腔室内的所述电极以用于接纳所述承载体,所述方法包括以下步骤:
将剥离涂层施加到所述托座的外表面上以促进所述托座与所述承载体及其上沉积的所述材料的分离,其中所述剥离涂层呈现所述托座的修整表面,所述修整表面的表面粗糙度RA值为1至100微米,所述剥离涂层的所述修整表面的表面粗糙度RA值小于所述托座的所述外表面的表面粗糙度RA值;
将所述托座连接到所述腔室内的所述电极;
将所述承载体连接到所述腔室内的所述托座;
密封所述腔室;
将包含所述材料或其前体的沉积组合物引入所述腔室;
在所述腔室内加热所述承载体;
将所述材料沉积在所述经加热的承载体上;以及
使所述托座与所述承载体及其上沉积的所述材料分离,从而收获所述承载体。
21.根据权利要求20所述的方法,其中使所述托座与所述承载体分离的所述步骤还被限定为从所述托座移除所述材料以使所述托座从所述承载体脱离。
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MY187928A (en) * | 2014-08-29 | 2021-10-29 | Tokuyama Corp | Process for producing silicon single crystal |
JP6754674B2 (ja) * | 2016-11-08 | 2020-09-16 | 昭和電工株式会社 | 炭化タンタルの評価方法 |
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2013
- 2013-07-09 CN CN201380036021.2A patent/CN104411864B/zh not_active Expired - Fee Related
- 2013-07-09 KR KR20147036082A patent/KR20150035735A/ko not_active Application Discontinuation
- 2013-07-09 WO PCT/US2013/049743 patent/WO2014011647A1/en active Application Filing
- 2013-07-09 US US14/413,972 patent/US20150232987A1/en not_active Abandoned
- 2013-07-09 JP JP2015521747A patent/JP2015527490A/ja active Pending
- 2013-07-09 EP EP13740440.6A patent/EP2872667A1/en not_active Withdrawn
- 2013-07-09 CA CA2876507A patent/CA2876507A1/en not_active Abandoned
- 2013-07-10 TW TW102124845A patent/TWI588289B/zh not_active IP Right Cessation
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US5277934A (en) * | 1990-06-27 | 1994-01-11 | Advanced Ceramico Corporation | Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
EP0529593A1 (en) * | 1991-08-29 | 1993-03-03 | Ucar Carbon Technology Corporation | A glass carbon coated graphite chuck for use in producing polycrystalline silicon |
CN102047066A (zh) * | 2008-04-14 | 2011-05-04 | 赫姆洛克半导体公司 | 用于沉积材料的制造设备和其中使用的电极 |
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Also Published As
Publication number | Publication date |
---|---|
US20150232987A1 (en) | 2015-08-20 |
CN104411864A (zh) | 2015-03-11 |
TW201404934A (zh) | 2014-02-01 |
CA2876507A1 (en) | 2014-01-16 |
EP2872667A1 (en) | 2015-05-20 |
WO2014011647A1 (en) | 2014-01-16 |
KR20150035735A (ko) | 2015-04-07 |
TWI588289B (zh) | 2017-06-21 |
JP2015527490A (ja) | 2015-09-17 |
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