CN104399181A - Deep brain stimulation device - Google Patents
Deep brain stimulation device Download PDFInfo
- Publication number
- CN104399181A CN104399181A CN201410711365.5A CN201410711365A CN104399181A CN 104399181 A CN104399181 A CN 104399181A CN 201410711365 A CN201410711365 A CN 201410711365A CN 104399181 A CN104399181 A CN 104399181A
- Authority
- CN
- China
- Prior art keywords
- stimulation
- generation module
- deep brain
- module
- lesions located
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a deep brain stimulation device which comprises a stimulation circuit and a stimulation electrode, wherein the stimulation circuit comprises a stimulation generation module, a power supply module and a NFC module, wherein the stimulation generation module is connected with the stimulation electrode and is used for generating an electric stimulation signal which is transmitted to a deep brain part through the stimulation electrode; the power supply module is connected with the stimulation generation module and is used for providing electric energy for the stimulation generation module; the NFC module is connected with the stimulation generation module; the stimulation generation module is used for receiving stimulation parameters of a NFC controller through the NFC module; the NFC controller is arranged cooperatively and externally; the stimulation generation module is used for generating the electric stimulation signal according to the stimulation parameters. By adopting the deep brain stimulation device, the power consumption can be reduced, the communication time is shortened, and thus the service life of the internal power supply module is prolonged.
Description
Technical field
The present invention relates to medical instruments field, particularly relate to a kind of lesions located in deep brain device.
Background technology
DBS (Deep Brain Stimulation, lesions located in deep brain therapy), for the diseases such as treatment parkinson provide a kind of reversibility means that can regulate.This Therapeutic Method utilizes a device being similar to cardiac pacemaker, to pinpoint brain deep nuclei conveying electricity irritation.These positions are stimulated, can controlled motion function loop recover relatively normal.As shown in Figure 1, existing lesions located in deep brain device comprises stimulation circuit 30 and stimulating electrode 131, and stimulation circuit 30 produces electrical stimulation signal, is connected with stimulating electrode 131, by stimulating electrode 131 to the conveying electricity irritation of brain deep.Stimulation circuit 30 comprises battery 21, FUSE22 (electric fuse), RF chip 23, stimulates generation module 10, and battery 21 provides electric energy by FUSE22 for stimulating generation module 10, and RF chip 23 receives outside stimulus parameter to stimulating generation module 10.In the prior art, generation module 10 is stimulated specifically to comprise MCU12, stimulating chip 13, peripheral circuit 14.Lesions located in deep brain device communication electric current of the prior art is comparatively large, and communication time is longer, thus life-time service causes cell resistance to increase, and shortens battery.
Summary of the invention
The object of the present invention is to provide a kind of lesions located in deep brain device, solve lesions located in deep brain device communication electric current in prior art large, the technical problem that communication time is long.
In order to solve the problems of the technologies described above, a kind of lesions located in deep brain device of the present invention, comprise stimulation circuit and stimulating electrode, described stimulation circuit comprises:
The stimulation generation module be connected with described stimulating electrode, is transported to brain deep for generating electrical stimulation signal by described stimulating electrode;
Connect described stimulation generation module and provide the power module of electric energy for it;
The NFC module be connected with described stimulation generation module, described stimulation generation module receives the stimulus parameter of the outside NFC controller be equipped with by described NFC module, and described stimulation generation module generates electrical stimulation signal according to described stimulus parameter.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, the NFC controller that system status information sends to outside to be equipped with by described NFC module by described stimulation generation module.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described stimulation circuit and described stimulating electrode integrally formed.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described stimulation generation module comprises control unit and stimulating unit, described control unit sends control signal according to described stimulus parameter, and described stimulating unit produces electrical stimulation signal according to described control signal.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described control unit also monitoring system temperature and/or measuring system voltage and/or measuring system electric current and/or measure stimulating current and/or measure stimulation voltage and/or measure and stimulate impedance and/or charging current.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described power module comprises:
Charge coil, described charge coil receives outside electric energy by the mode of wireless charging;
Rectification unit, electricity accumulating unit, described electricity accumulating unit connects by described rectification unit the electrical power storage that charge coil receives by described charge coil.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described electricity accumulating unit is farad capacitor.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described power module also comprises the voltage regulation unit be connected between described farad capacitor and described stimulation generation module, described farad capacitor by described voltage regulation unit for described stimulation generation module provides electric energy.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, described power module comprises:
For the battery of storage of electrical energy;
Be connected to the safe Resistance between described battery and described stimulation generation module, described battery by described safe Resistance for described stimulation generation module provides electric energy.
As the further improvement of the present invention's above-mentioned lesions located in deep brain device, the resistance of described safe Resistance is 50-150 ohm.
Compared with prior art, the present invention is provided with NFC module in lesions located in deep brain device, is received the stimulus parameter of the outside NFC controller be equipped with by NFC module, stimulates generation module can generate electrical stimulation signal according to stimulus parameter.The present invention can reduce power consumption, shortens communication time, thus improves the service life of internal electric source module.
Accompanying drawing explanation
Fig. 1 is lesions located in deep brain device schematic diagram in prior art.
Fig. 2 is that lesions located in deep brain device bilateral implants schematic diagram.
Fig. 3 is lesions located in deep brain device schematic diagram in an embodiment of the present invention.
Fig. 4 is lesions located in deep brain device schematic diagram in an embodiment of the present invention.
Fig. 5 is the circuit diagram of safe Resistance in Fig. 4 embodiment.
Detailed description of the invention
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these embodiments do not limit the present invention, the structure that those of ordinary skill in the art makes according to these embodiments, method or conversion functionally are all included in protection scope of the present invention.
As shown in Figure 2, lesions located in deep brain device bilateral implants schematic diagram, in the present embodiment, at people's et al. Ke two lesions located in deep brain devices, symmetrical.The number implanting lesions located in deep brain device needs decision by what treat, is not limited in implantation two lesions located in deep brain devices.Lesions located in deep brain device comprises stimulation circuit 30 and stimulating electrode 131, and more reliable in order to ensure, stimulation circuit 30 is integrally formed with stimulating electrode 131, does not have special connecting elements, such as electrode plug.Preferably, the stimulated side of stimulating electrode 131 at least comprises 4 and stimulate contact.
As shown in Figure 3, Figure 4, stimulation circuit 30 comprises stimulates generation module 10, power module 20, NFC(Near Field Communication, near field communication (NFC)) module 24.Wherein, stimulate generation module 10 for generating electrical stimulation signal, generation module 10 is stimulated to be connected with stimulating electrode 131, the electrical stimulation signal of generation is transferred to stimulating electrode 131, brain deep is transported to by stimulating electrode 131, brain deep under the stimulation of electrical stimulation signal, can controlled motion function loop recover relatively normal.
Stimulate generation module 10 can comprise control unit 15 and stimulating unit 16.What control unit 15 played in stimulation generation module 10 is control undertaking effect, receive the stimulus parameter that NFC module transmits on the one hand, and sending control signal according to stimulus parameter, stimulating unit 16 can produce electrical stimulation signal according to the control signal stimulating generation module 10 to send; On the other hand control unit 15 can monitoring system temperature and/or measuring system voltage and/or measuring system electric current and/or measuring system impedance and/or measure stimulating current and/or measure stimulation voltage and/or measure and stimulate impedance and/or charging current etc., and control unit 15 can by said system status information transmission to NFC module 24.Preferably, generation module 10 is stimulated also to comprise peripheral cell 17, auxiliary power module 20 and stimulate mutual between generation module 10 and to stimulate between the control unit 15 in generation module 10, stimulating unit 16 mutual, plays the effect of subsidiary, stimulation, stabilized power source.Control unit preferably adopts MCU (Micro Control Unit, micro-control unit), a kind of low-power consumption microcontroller, operating current is extremely low, under low-power mode, system power only has several microamperes, even if under 3V normal mode of operation, electric current also only has 300 microamperes, therefore power consumption is minimum, also relatively little to the requirement of power module.Stimulating unit 16 can be the special IC that produces stimulus signal, and preferably, single channel exports to stimulate, and, there are electric current and voltage two kinds of stimulus modelities in 4 contacts, produce electrical stimulation signal under the control of control unit 15.In more embodiment, stimulating unit 16 is that the dual pathways exports and stimulates, and, there are electric current and voltage two kinds of stimulus modelities in each passage 4 contacts, can arrange stimulus parameter respectively, and stimulating electrode 131 also coordinates with stimulating unit 16 and is provided with the dual pathways.
NFC module 24 with stimulation generation module 10 be connected, control unit 15 can with NFC module 24 both-way communication.NFC is a kind of radiotechnics of short distance high frequency, runs in 20 cm distance in 13.56MHz frequency, and NFC technique therefore can be adopted to carry out transmitting information wirelessly.Generation module 10 is stimulated to be received the stimulus parameter of the NFC controller that outside is equipped with by NFC module 24, stimulate generation module 10 to generate electrical stimulation signal according to stimulus parameter, stimulate generation module 10 also by NFC controller that system status information sends to outside to be equipped with by NFC module 24.Because lesions located in deep brain device is implanted to inside of human body, so outside described here refers to outside human body, NFC controller and NFC module 24 cooperatively interact and realize wireless telecommunications.Compared with traditional RF communication, RF communication electric current is larger, about 20mA, RF communication first need be inquired about, be waken up, and then configuration address connects, and then stimulus parameter uploaded or downloads, want about 15 seconds at the soonest, the time is longer, and inquiry and wake up and all need people's manual operations, because NFC module 24 and the combination of other devices in lesions located in deep brain device add communication speed, each communication only needs 1-2 second.NFC is near-field communication, and the risk by electromagnetic interference for public use is little, and RF communication is easily by surrounding electromagnetic interference.NFC communication uses external electromagnetic inductive power supply, therefore system charge is not consumed, save the electricity of valuable power module 20, when stimulating the control unit 15 in generation module 10 to occur program deadlock or short circuit, NFC communication still can continue to run, can find out failure cause, this is also that those skilled in the art thirst for solving always but fail the technical barrier that succeeds all the time.
Power module 20 is connected with stimulation generation module 10, provides electric energy for stimulating generation module 10.Be two kinds of detailed description of the invention of power module 20 as shown in Figure 3, Figure 4.
Adopt conventional batteries to provide electric energy as power module 20 for stimulating generation module 10, shortcoming is, take volume comparatively large, heavier-weight, also has tympanites, in the dead of night equivalent risk simultaneously, when especially there is big current, generates heat very serious.Because power module is implanted to inside of human body, the wound therefore brought to patient is comparatively large, and simultaneously because battery needs 3-5 will change once, patient need bear the misery that a large number of expense and operation are changed.As shown in Figure 3, in an embodiment of the present invention, power module 20 comprises charge coil 25, rectification unit 26, electricity accumulating unit 27.Charge coil coordinates with outside wireless charging device, receives outside electric energy by the mode of wireless charging, and wireless charging mode can be electromagnetic coupled resonance, and therefore charge efficiency is higher, at least can reach more than 50%.Preferably, the antenna that charge coil 25 also can be used as NFC module 24 is connected with NFC module.Rectification unit 26 is connected with charge coil 25, and receive the electric energy of wireless charging, carry out rectifying and wave-filtering to charging current, electricity accumulating unit 27 connects rectification unit 26, and by electrical power storage that charge coil 25 receives by rectification unit 26.
Electricity accumulating unit 27 preferably adopts farad capacitor, and farad capacitor is as the power supply unit of lesions located in deep brain device.Farad capacitor is also super capacitor or gold electric capacity, belong to double layer capacitor, it is the one that in the double layer capacitor having dropped into volume production in the world, capacity is maximum, its ultimate principle is the same with the double layer capacitor of other kind, is all the capacity utilizing the double electrical layers of active carbon porous electrode and electrolyte composition to obtain super large.It is fast that farad capacitor has the large charging rate of capacity, and service time is long, without the advantage of overdischarge, even if farad capacitor is discharged completely, also can be full of electricity and continues to use.Farad capacitor coordinates with rectification unit 26, the problem that rectification unit 26 also can protect farad capacitor to overcharge.Preferably, voltage regulation unit 28 is provided with for stimulating generation module 10 to provide between the connection of electric energy at electricity accumulating unit 27, voltage regulation unit 28 can carry out the effect of voltage stabilizing to the voltage of farad capacitor, because along with the change of farad capacitor electricity, the voltage of farad capacitor can change, so the effect of voltage regulation unit 28 can make system power supply more stable.
Farad capacitor is powered safer compared to other electricity accumulating units, and filling once electricity can provide the work energy of 30 hours.As selected specification to be the farad capacitor of 3F under 5.5V running voltage, estimate as follows:
Use lower voltage limit as being 1.5V, active voltage difference is then 5.5-1.5=4.0 V, so effective electricity (Q)=capacitance (F) * voltage (V)=3*4.0=12(coulomb).Can be obtained by formula electricity (Q)=electric current (I) * time (T): time (T)=electricity (Q)/electric current (I).Therefore, if system average current is 100 μ A, time (T)=12/(100*10-6)=120000 seconds=33.3 hours.If actual charging average current is 50mA, so the time of filling once electricity is time (T)=electricity (Q)/electric current (I)=12/(50*10-3)=240 seconds=4 minutes.If farad capacitor does not have electricity completely, actual charging average current is 50mA, so the time of filling once electricity is time (T)=electricity (Q)/electric current (I)=3*(5.5-0)/(50*10-3)=330 second=5.5 minutes.Therefore, in the process of reality use, every day, patient only need wear the use that external charger just can meet a day 24 hours for 10 minutes.Even if forgotten charging, farad capacitor overdischarge also can not cause the damage of lesions located in deep brain device.Suppose that invention adopts large current charge, charging heating can be estimated as follows: charging heating calculates and is charged as benchmark with direct current 6V, and efficiency is 50%, and charging current is 50mA, so wasted power P=U*I=6 * 0.05=0.3W, implant site temperature can not be caused to raise.Charging simultaneously due to farad capacitor is not quite alike with the principle of lithium ion cell charging, so speed is very fast.
In the present embodiment, due to farad capacitor small volume, under 5v running voltage, the farad capacitor volume of 3F is also only about Φ 16mm*H5mm, therefore, it is minimum that power module takies volume, weight is extremely light, thus lesions located in deep brain device of the present invention is except stimulating electrode 131, overall volume is about Φ about 20mm*H5mm or smaller szie, can be the various shapes had with skull adhered shape cambered surface, so lesions located in deep brain device operation wound in the process implanted is little, can only need perform an operation at head, direct implant head is subcutaneous, incidence need not open tunnel, also need not perform an operation in chest, implant fast and easy.Due to the characteristic of farad capacitor, longer service life, product life cycle is elongated, patient can with fill with, available throughout one's life, there is no trouble and worry.It also avoid the risk of leakage that conventional batteries brings, tympanites simultaneously.
As shown in Figure 4, another embodiment of the present invention, NFC module 24, stimulation generation module 10 are similar with above-mentioned embodiment, do not repeat them here.Power module 20 comprises battery 210, safe Resistance 29.Battery 210 is for storage of electrical energy, and being arranged in lesions located in deep brain device and being implanted in body, preferably, battery 210 is high-energy lithium argon battery, and provide electric energy to the work of lesions located in deep brain device, this energy content of battery is high, and service time is long.Between battery and stimulation generation module 10, FUSE is set as protector in lesions located in deep brain device of the prior art; if but producing big current (as the big current that program run-time error causes) in work process will blow FUSE; cause the damage of hardware; thus cannot resume work; just can must be worked by the power module changing the lesions located in deep brain device in body, this must bring economically to patient and spiritual very big burden.In present embodiment, FUSE will be replaced with safe Resistance, as shown in Figure 5, safe Resistance 29 be arranged on battery 210 be connected stimulate generation module junction point (i.e. outfan Vsource) between, safe Resistance 29, as being current limiting element, limits the operating current of lesions located in deep brain device, works under the state making battery and circuit components always work in low current, heavy current impact to battery and circuit components simultaneously when eliminating system electrification, increases circuit safety and reliability.The use of safe Resistance 29 makes system power be limited in all the time in safety range, system power (I)=(Vbat – Vsource)/safe Resistance (R).Under supposing most extreme case, the outfan shorted to earth (i.e. output end voltage Vsource=0) of safe Resistance 29, system power (I)=(Vbat – Vsource)/safe Resistance (R)=(3.6 – 0)/100=36mA(establishes representative value: Vbat=3.6V, safe Resistance (R)=100 Ω), power consumption P=I that safe Resistance produces
2* R=0.036*0.036 * 100=0.1296W, the adverse events of heating when lesions located in deep brain device can not be caused to work.Battery 210 provides electric energy by safe Resistance 29 for stimulating generation module 10, system power is made to be limited in a microampere rank all the time, the risk that components and parts lost efficacy because of unexpected big current reduces, to the heavy current impact of battery and other components and parts of circuit when safe Resistance 29 reduces system electrification, reduce the failure risk of components and parts and battery-heating, tympanites, risk in the dead of night.Because system power dissipation always works in a microampere μ A rank, so power consumption is little, can reduce the instruction of battery altering voltage and be low to moderate 2.2V, the battery altering voltage of existing lesions located in deep brain device is designated as 3.2V, so can increase the service life half a year to one year, reduce replacement cost.The preferred scope of safe Resistance 29 resistance is between 50-150 ohm.
As can be seen from above-mentioned embodiment, safe Resistance 29 electric fuse used compared with lesions located in deep brain device in prior art has great advantage, and reaches unforeseeable technique effect.Electric fuse is once blow because of big current (as the big current that program fleet reason causes), system cannot be recovered, and safe Resistance can recover the function of lesions located in deep brain device effectively, use the lesions located in deep brain device of electric fuse to blow just cannot recover, and lesions located in deep brain device of the present invention is because of without electric fuse, hardware can not damage, and just can recover completely during software reset.
In sum, the present invention is provided with NFC module in lesions located in deep brain device, is received the stimulus parameter of the outside NFC controller be equipped with by NFC module, stimulates generation module can generate electrical stimulation signal according to stimulus parameter.The present invention can reduce power consumption, shortens communication time, thus improves the service life of internal electric source module.
Be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should by description integrally, technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility embodiment of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.
Claims (10)
1. a lesions located in deep brain device, is characterized in that, comprises stimulation circuit and stimulating electrode, and described stimulation circuit comprises:
The stimulation generation module be connected with described stimulating electrode, is transported to brain deep for generating electrical stimulation signal by described stimulating electrode;
Connect described stimulation generation module and provide the power module of electric energy for it;
The NFC module be connected with described stimulation generation module, described stimulation generation module receives the stimulus parameter of the outside NFC controller be equipped with by described NFC module, and described stimulation generation module generates electrical stimulation signal according to described stimulus parameter.
2. lesions located in deep brain device according to claim 1, is characterized in that, the NFC controller that system status information sends to outside to be equipped with by described NFC module by described stimulation generation module.
3. lesions located in deep brain device according to claim 1, is characterized in that, described stimulation circuit and described stimulating electrode integrally formed.
4. lesions located in deep brain device according to claim 1, it is characterized in that, described stimulation generation module comprises control unit and stimulating unit, and described control unit sends control signal according to described stimulus parameter, and described stimulating unit produces electrical stimulation signal according to described control signal.
5. lesions located in deep brain device according to claim 4, it is characterized in that, described control unit also monitoring system temperature and/or measuring system voltage and/or measuring system electric current and/or measure stimulating current and/or measure stimulation voltage and/or measure and stimulate impedance and/or charging current.
6. lesions located in deep brain device according to claim 1, is characterized in that, described power module comprises:
Charge coil, described charge coil receives outside electric energy by the mode of wireless charging;
Rectification unit, electricity accumulating unit, described electricity accumulating unit connects by described rectification unit the electrical power storage that charge coil receives by described charge coil.
7. lesions located in deep brain device according to claim 6, is characterized in that, described electricity accumulating unit is farad capacitor.
8. lesions located in deep brain device according to claim 7, it is characterized in that, described power module also comprises the voltage regulation unit be connected between described farad capacitor and described stimulation generation module, described farad capacitor by described voltage regulation unit for described stimulation generation module provides electric energy.
9. lesions located in deep brain device according to claim 1, is characterized in that, described power module comprises:
For the battery of storage of electrical energy;
Be connected to the safe Resistance between described battery and described stimulation generation module, described battery by described safe Resistance for described stimulation generation module provides electric energy.
10. lesions located in deep brain device according to claim 9, is characterized in that, the resistance of described safe Resistance is 50-150 ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410711365.5A CN104399181A (en) | 2014-12-01 | 2014-12-01 | Deep brain stimulation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410711365.5A CN104399181A (en) | 2014-12-01 | 2014-12-01 | Deep brain stimulation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104399181A true CN104399181A (en) | 2015-03-11 |
Family
ID=52636885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410711365.5A Pending CN104399181A (en) | 2014-12-01 | 2014-12-01 | Deep brain stimulation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104399181A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106669034A (en) * | 2016-12-30 | 2017-05-17 | 北京品驰医疗设备有限公司 | Brain deep-part electrical stimulation bleeding detection system based on temperature feedbacks |
| CN112402791A (en) * | 2020-11-04 | 2021-02-26 | 深圳中科华意科技有限公司 | Nerve regulation and control device and method |
| US11383081B2 (en) | 2019-06-27 | 2022-07-12 | City University Of Hong Kong | Neurostimulation system and method for modulating abnormal motor movement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030114897A1 (en) * | 2001-12-19 | 2003-06-19 | Von Arx Jeffrey A. | Implantable medical device with two or more telemetry systems |
| CN101965158A (en) * | 2007-12-28 | 2011-02-02 | 新磁有限公司 | Contact device for osteosynthesis |
| CN203458691U (en) * | 2013-08-15 | 2014-03-05 | 先健科技(深圳)有限公司 | Implantable neural electrical stimulation system |
| CN204275292U (en) * | 2014-12-01 | 2015-04-22 | 苏州景昱医疗器械有限公司 | Lesions located in deep brain device |
-
2014
- 2014-12-01 CN CN201410711365.5A patent/CN104399181A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030114897A1 (en) * | 2001-12-19 | 2003-06-19 | Von Arx Jeffrey A. | Implantable medical device with two or more telemetry systems |
| CN101965158A (en) * | 2007-12-28 | 2011-02-02 | 新磁有限公司 | Contact device for osteosynthesis |
| CN203458691U (en) * | 2013-08-15 | 2014-03-05 | 先健科技(深圳)有限公司 | Implantable neural electrical stimulation system |
| CN204275292U (en) * | 2014-12-01 | 2015-04-22 | 苏州景昱医疗器械有限公司 | Lesions located in deep brain device |
Non-Patent Citations (1)
| Title |
|---|
| E FREUDENTHAL等: "Suitability of NFC for Medical Device Communication and Power Delivery", 《IEEEXPLORE，ENGINEERING IN MEDICINE & BIOLOGY WORKSHOP, 2007:51-54》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106669034A (en) * | 2016-12-30 | 2017-05-17 | 北京品驰医疗设备有限公司 | Brain deep-part electrical stimulation bleeding detection system based on temperature feedbacks |
| CN106669034B (en) * | 2016-12-30 | 2023-07-04 | 北京品驰医疗设备有限公司 | Deep brain electrical stimulation bleeding detection system based on temperature feedback |
| US11383081B2 (en) | 2019-06-27 | 2022-07-12 | City University Of Hong Kong | Neurostimulation system and method for modulating abnormal motor movement |
| CN112402791A (en) * | 2020-11-04 | 2021-02-26 | 深圳中科华意科技有限公司 | Nerve regulation and control device and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9694192B2 (en) | Implantable medical device with a primary and rechargeable battery | |
| US10974055B2 (en) | Battery protection and zero-volt battery recovery system for an implantable medical device | |
| US9867995B2 (en) | Efficient external charger for an implantable medical device optimized for fast charging and constrained by an implant power dissipation limit | |
| US10027157B2 (en) | Implant current controlled battery charging based on temperature | |
| CN103560572B (en) | A kind of implantable cardiac pacemaker magnetic coupling resonance wireless charging device | |
| CN100386916C (en) | Wireless charging device through skin in use for implantation type medical treatment instrument | |
| CN101980412B (en) | Percutaneous closed-loop control charging device for implantation type medical treatment instrument | |
| US20110276110A1 (en) | Power Circuitry for an Implantable Medical Device Using a DC-DC Converter | |
| WO2011063111A4 (en) | An efficient external charger for charging a plurality of implantable medical devices | |
| CN104399181A (en) | Deep brain stimulation device | |
| US9968795B2 (en) | Implantable neurostimulator devices including both non-rechargeable and rechargeable batteries and methods of use therewith | |
| CN204275292U (en) | Lesions located in deep brain device | |
| CN106451626B (en) | Wireless charging device of implanted electronic stimulator | |
| Haci et al. | Key considerations for power management in active implantable medical devices | |
| CN204910500U (en) | Wireless biography of brain pace maker can system | |
| CN104158237A (en) | Cardiac pacemaker wireless charging method and apparatus based on magnetic resonance | |
| CN100518855C (en) | Induction charging type brain deep stimulator adopting alkaline zinc-manganese charging battery | |
| Yao et al. | Implantable stimulator for biomedical applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150311 |
|
| RJ01 | Rejection of invention patent application after publication |