CN104393861B - A kind of MOSFET parallel circuit - Google Patents
A kind of MOSFET parallel circuit Download PDFInfo
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- CN104393861B CN104393861B CN201410706984.5A CN201410706984A CN104393861B CN 104393861 B CN104393861 B CN 104393861B CN 201410706984 A CN201410706984 A CN 201410706984A CN 104393861 B CN104393861 B CN 104393861B
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Abstract
The present invention provides a kind of MOSFET parallel circuit, including one group of MOSFET in parallel, serial capacitance device between the grid and source electrode of a MOSFET at least in, the capacitance value range of capacitor is 100pF 1uF, serial capacitance device is in parallel between multiple MOSFET grid and source electrode, the present invention can take care of yourself the uniformity that driving is opened, and also enhance the anti-interference of circuit.
Description
Technical field
The present invention relates to a kind of drive circuit, more particularly to a kind of MOSFET parallel circuit.
Background technology
The parallel circuit for being currently based on more MOSFET is encapsulated using paster more, and MOSFET parallel circuit is welded on aluminium base
On, contribute to MOSFET radiatings and thermal balance, but during multiple MOSFET parallel connections, because drives line is very long, MOSFET PCB cloth
Office can be bigger, by taking 9 MOSFET low-voltage servo driver aluminium base in parallel as an example, during 9 MOSFET parallel connections of single bridge arm,
The distance between two farthest MOSFET about 150mm, so long drives line can cause paralleling MOS FET circuit drive to be present
It is dynamic to open the problem of inconsistent, while its driving is opened and is also easily disturbed.Above mentioned problem can cause each in parallel when serious
The electric current that MOSFET driving is opened is inconsistent, causes indivedual MOSFET agings serious or directly damages.
The content of the invention
In order to solve the above problems, the invention provides a kind of MOSFET parallel circuit, can take care of yourself what driving was opened
Uniformity, also enhance the anti-interference of circuit.
The present invention adopts the following technical scheme that：A kind of MOSFET parallel circuit, including one group of MOSFET in parallel, respectively
MOSFET grid concatenates with a resistance；Serial capacitance device between the grid and source electrode of a MOSFET at least in, electricity
The capacitance value range of container is 100pF-1uF, and the capacitor concatenated between multiple MOSFET grids and source electrode is parallel connection.
Further, capacitor is uniformly serially connected in the MOSFET circuits of parallel connection, and the capacitance of each capacitor is identical, and one
The individual MOSFET for having concatenated capacitor, is different from side and adjacent two MOSFET for having concatenated capacitor are spaced
MOSFET quantity is identical.
Beneficial effect：Concatenated between at least one MOSFET of the present invention in MOSFET parallel circuit grid and source electrode
Capacitor, the capacitance value range of capacitor is 100pF-1uF, and serial capacitance device is simultaneously between multiple MOSFET grid and source electrode
Connection, capacitor load changing, are slowed down MOSFET actuating speed with this, made when each MOSFET flows through different electric currents
MOSFET drive actions are consistent, and so as to cause the electric current for flowing through each MOSFET identical, each MOSFET heatings are balanced, this
Ensure that each MOSFET of parallel connection service life is essentially identical, also cause drive circuit that there is very strong anti-interference energy
Power.
Because foregoing circuit forms so that the interference that the present invention can also be to impulse type provides good cushioning effect, in order to avoid
When larger impulse disturbances invade, driving voltage will not be too high or too low, avoids MOSFET malfunctions and causes system failure.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams in embodiments of the invention.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment the present invention is further described.
Embodiment 1：
As shown in figure 1, a kind of MOSFET parallel circuit, including one group of MOSFET in parallel, MOSFET quantity are 9
It is individual, serial capacitance device between the 3rd MOSFET wherein, the 6th MOSFET, the 9th MOSFET grid and source electrode respectively
C3, C6, C9, the capacitance of each capacitor are 100pF, and above three capacitor is parallel connection, 9 MOSFET grid all with
One resistance concatenates.
In the present embodiment, capacitor is uniformly serially connected in the MOSFET circuits of parallel connection as driving buffering electric capacity, Ge Ge electricity
The capacitance of container is identical, i.e. 3 adjacent MOSFET share a driving buffering electric capacity, entirely as a region
MOSFET parallel circuit, 3 equivalent driving buffering electric capacity are used, that is, capacitor C6 MOSFET have been concatenated, with it not
Homonymy (arranged on left and right sides) and adjacent two have concatenated capacitor C3 respectively, the MOSFET that capacitor C9 MOSFET is spaced
Quantity it is identical, be all 2, above-mentioned MOSFET parallel circuit pass to 160A electric current, the maximum heating between 9 MOSFET
It is less than 4 degree with the difference of minimum heating, meets the requirement of uniformity, while the structure of this equidistant serial capacitance device, also enter
One step strengthens the uniformity and antijamming capability of MOSFET drive actions.
Embodiment 2：
As shown in figure 1, a kind of MOSFET parallel circuit, including one group of MOSFET in parallel, MOSFET quantity are 9
It is individual, serial capacitance device between the 3rd MOSFET wherein, the 6th MOSFET, the 9th MOSFET grid and source electrode respectively
C3, C6, C9, the capacitance of each capacitor are 500pF, and above three capacitor is parallel connection, 9 MOSFET grid all with
One resistance concatenates.
In the present embodiment, capacitor is uniformly serially connected in the MOSFET circuits of parallel connection as driving buffering electric capacity, Ge Ge electricity
The capacitance of container is identical, i.e. 3 adjacent MOSFET share a driving buffering electric capacity, entirely as a region
MOSFET parallel circuit, 3 equivalent driving buffering electric capacity are used, that is, capacitor C6 MOSFET have been concatenated, with it not
Homonymy (arranged on left and right sides) and adjacent two have concatenated capacitor C3 respectively, the MOSFET that capacitor C9 MOSFET is spaced
Quantity it is identical, be all 2, above-mentioned MOSFET parallel circuit pass to 160A electric current, the maximum heating between 9 MOSFET
It is less than 4 degree with the difference of minimum heating, meets the requirement of uniformity, while the structure of this equidistant serial capacitance device, also enter
One step strengthens the uniformity and antijamming capability of MOSFET drive actions.
Embodiment 3：
As shown in figure 1, a kind of MOSFET parallel circuit, including one group of MOSFET in parallel, MOSFET quantity are 9
It is individual, serial capacitance device between the 3rd MOSFET wherein, the 6th MOSFET, the 9th MOSFET grid and source electrode respectively
C3, C6, C9, the capacitance of each capacitor are 1uF, and above three capacitor is parallel connection, and 9 MOSFET grid is all with one
Resistance concatenates.
In the present embodiment, capacitor is uniformly serially connected in the MOSFET circuits of parallel connection as driving buffering electric capacity, Ge Ge electricity
The capacitance of container is identical, i.e. 3 adjacent MOSFET share a driving buffering electric capacity, entirely as a region
MOSFET parallel circuit, 3 equivalent driving buffering electric capacity are used, that is, capacitor C6 MOSFET have been concatenated, with it not
Homonymy (arranged on left and right sides) and adjacent two have concatenated capacitor C3 respectively, the MOSFET that capacitor C9 MOSFET is spaced
Quantity it is identical, be all 2, above-mentioned MOSFET parallel circuit pass to 160A electric current, the maximum heating between 9 MOSFET
It is less than 4 degree with the difference of minimum heating, meets the requirement of uniformity, while the structure of this equidistant serial capacitance device, also enter
One step strengthens the uniformity and antijamming capability of MOSFET drive actions.
Claims (1)
1. a kind of MOSFET parallel circuit, including one group of MOSFET in parallel, it is characterised in that：Each MOSFET grid and one
Resistance concatenates；The serial capacitance device between multiple MOSFET grid and source electrode, the capacitance value range of capacitor is 100pF-
1uF, the capacitor concatenated between multiple MOSFET grids and source electrode are parallel connection；Capacitor is uniformly serially connected in the MOSFET electricity of parallel connection
Lu Zhong, the capacitance of each capacitor is identical, a MOSFET for having concatenated capacitor, is different from side and adjacent two strings
The quantity for having met the MOSFET that the MOSFET of capacitor is spaced is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410706984.5A CN104393861B (en) | 2014-11-27 | 2014-11-27 | A kind of MOSFET parallel circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410706984.5A CN104393861B (en) | 2014-11-27 | 2014-11-27 | A kind of MOSFET parallel circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104393861A CN104393861A (en) | 2015-03-04 |
| CN104393861B true CN104393861B (en) | 2017-12-19 |
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| CN201410706984.5A Active CN104393861B (en) | 2014-11-27 | 2014-11-27 | A kind of MOSFET parallel circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588773A (en) * | 2004-07-08 | 2005-03-02 | 浙江大学 | Boost type active interlaced parallel soft switch circuit |
| CN103582408A (en) * | 2013-07-31 | 2014-02-12 | 刘杰 | MOSFET parallel circuit layout |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69525865T2 (en) * | 1994-04-22 | 2002-09-19 | Canon K.K., Tokio/Tokyo | Driver circuit for a light emitting diode |
| JP2005033888A (en) * | 2003-07-10 | 2005-02-03 | Seiko Instruments Inc | Switching regulator control circuit |
-
2014
- 2014-11-27 CN CN201410706984.5A patent/CN104393861B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588773A (en) * | 2004-07-08 | 2005-03-02 | 浙江大学 | Boost type active interlaced parallel soft switch circuit |
| CN103582408A (en) * | 2013-07-31 | 2014-02-12 | 刘杰 | MOSFET parallel circuit layout |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
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| CN104393861A (en) | 2015-03-04 |
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