CN104393155A - 基于对称周期的发光二极管封装方法以及led封装体 - Google Patents
基于对称周期的发光二极管封装方法以及led封装体 Download PDFInfo
- Publication number
- CN104393155A CN104393155A CN201410610414.6A CN201410610414A CN104393155A CN 104393155 A CN104393155 A CN 104393155A CN 201410610414 A CN201410610414 A CN 201410610414A CN 104393155 A CN104393155 A CN 104393155A
- Authority
- CN
- China
- Prior art keywords
- refraction
- line
- encapsulation
- led
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000084 colloidal system Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000012856 packing Methods 0.000 claims description 41
- 230000000737 periodic effect Effects 0.000 claims description 27
- 239000002105 nanoparticle Substances 0.000 claims description 22
- 239000003822 epoxy resin Substances 0.000 claims description 17
- 229920000647 polyepoxide Polymers 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 7
- 239000012790 adhesive layer Substances 0.000 abstract 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- 238000004806 packaging method and process Methods 0.000 description 15
- 239000004033 plastic Substances 0.000 description 15
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410610414.6A CN104393155B (zh) | 2014-11-03 | 2014-11-03 | 基于对称周期的发光二极管封装方法以及led封装体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410610414.6A CN104393155B (zh) | 2014-11-03 | 2014-11-03 | 基于对称周期的发光二极管封装方法以及led封装体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104393155A true CN104393155A (zh) | 2015-03-04 |
CN104393155B CN104393155B (zh) | 2017-02-15 |
Family
ID=52611025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410610414.6A Active CN104393155B (zh) | 2014-11-03 | 2014-11-03 | 基于对称周期的发光二极管封装方法以及led封装体 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104393155B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107452857A (zh) * | 2017-06-26 | 2017-12-08 | 南通华隆微电子股份有限公司 | 一种led光电二极管封装结构 |
CN107492592A (zh) * | 2017-06-26 | 2017-12-19 | 南通华隆微电子股份有限公司 | 一种发光二极管封装结构 |
CN109564962A (zh) * | 2016-08-11 | 2019-04-02 | 欧司朗光电半导体有限公司 | 硅树脂组合物 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
CN101369614A (zh) * | 2007-08-17 | 2009-02-18 | 刘胜 | 大功率白光发光二极管的封装结构和封装方法 |
CN101889356A (zh) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | 发光装置 |
CN101982892A (zh) * | 2010-08-18 | 2011-03-02 | 深圳市洲明科技股份有限公司 | 大功率led封装结构及封装方法 |
CN103489997A (zh) * | 2012-06-09 | 2014-01-01 | 王树生 | Led及led制作方法 |
-
2014
- 2014-11-03 CN CN201410610414.6A patent/CN104393155B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
CN101369614A (zh) * | 2007-08-17 | 2009-02-18 | 刘胜 | 大功率白光发光二极管的封装结构和封装方法 |
CN101889356A (zh) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | 发光装置 |
CN101982892A (zh) * | 2010-08-18 | 2011-03-02 | 深圳市洲明科技股份有限公司 | 大功率led封装结构及封装方法 |
CN103489997A (zh) * | 2012-06-09 | 2014-01-01 | 王树生 | Led及led制作方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109564962A (zh) * | 2016-08-11 | 2019-04-02 | 欧司朗光电半导体有限公司 | 硅树脂组合物 |
US11111385B2 (en) | 2016-08-11 | 2021-09-07 | Osram Oled Gmbh | Silicone composition |
CN107452857A (zh) * | 2017-06-26 | 2017-12-08 | 南通华隆微电子股份有限公司 | 一种led光电二极管封装结构 |
CN107492592A (zh) * | 2017-06-26 | 2017-12-19 | 南通华隆微电子股份有限公司 | 一种发光二极管封装结构 |
Also Published As
Publication number | Publication date |
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CN104393155B (zh) | 2017-02-15 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park source Street No. 258 Co-patentee after: HANGZHOU STELLA TECHNOLOGY Co.,Ltd. Patentee after: China Jiliang University Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park source Street No. 258 Co-patentee before: HANGZHOU STELLA TECHNOLOGY Co.,Ltd. Patentee before: China Jiliang University |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191224 Address after: 310018 Hangzhou, Zhejiang, Jianggan District province Xiasha Higher Education Park, No. 258 source street Patentee after: China Jiliang University Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park source Street No. 258 Co-patentee before: HANGZHOU STELLA TECHNOLOGY Co.,Ltd. Patentee before: China Jiliang University |
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TR01 | Transfer of patent right | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20150304 Assignee: HENGDIAN GROUP TOSPO LIGHTING Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2020330000001 Denomination of invention: Symmetric period-based light-emitting diode encapsulation method and LED encapsulation body Granted publication date: 20170215 License type: Common License Record date: 20200106 |
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EE01 | Entry into force of recordation of patent licensing contract |