CN104393106A - Solar cell ion implanter - Google Patents
Solar cell ion implanter Download PDFInfo
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- CN104393106A CN104393106A CN201410573361.5A CN201410573361A CN104393106A CN 104393106 A CN104393106 A CN 104393106A CN 201410573361 A CN201410573361 A CN 201410573361A CN 104393106 A CN104393106 A CN 104393106A
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- 238000010884 ion-beam technique Methods 0.000 claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims abstract description 18
- 102000004310 Ion Channels Human genes 0.000 claims abstract description 14
- 238000004458 analytical method Methods 0.000 claims abstract description 10
- 238000000605 extraction Methods 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000012216 screening Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 abstract description 67
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
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- Health & Medical Sciences (AREA)
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- Photovoltaic Devices (AREA)
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Abstract
The invention discloses a solar cell ion implanter and belongs to the manufacturing field of photovoltaic-used semiconductor devices. The ion implanter comprises an expansion source ion source, a leading out system, a mass analyzer and target disks, wherein the expansion source ion source is used for generating needed implanted ion-doped plasma; the leading out system is used for leading ions generated by the ion source out to obtain an ion beam with certain energy; the mass analyzer screens needed ions out through mass-to-charge ratio analysis and corrects a divergent beam into a broadband parallel beam; the target disks are used for clamping wafers; the mass analyzer is provided with an ion channel for enabling ions to pass through; the target disks are arranged at the exit of the ion channel; the leading put system is arranged at the entrance of the ion channel; and the leading put system is arranged between the ion source and the entrance of the ion channel. The solar cell ion implanter has the advantages that demands on the implantation process by the solar cell manufacturing process can be met, the process steps are reduced, complexity of equipment is reduced, realization difficulty and realization cost of the equipment are reduced, and effectiveness and practicality of the equipment are improved.
Description
Technical field
The present invention relates to a kind of solar battery sheet ion implantor, belong to solar battery sheet and manufacture field.
Background technology
Solar energy ion implantor develops in the technical foundation of semiconductor ion implanter, the making that solar silicon wafers completes battery surface p-n junction is injected into by Doped ions, ion implantation technique not only can reduce production difference compared with traditional diffusion dopant techniques, reduce a series of loaded down with trivial details processing step such as plasma etching and secondary cleaning, reduce breakage rate and the fabrication cycle of battery, also battery efficiency can be improved simultaneously, also strain is large mutually to make the power output of unit are, reduce assembly manufacturing cost, reduce electricity generation system spending, improve generated output, it is a kind of critical equipment of development high-efficiency battery sheet.Based on the advantage of ion implantation, some cell piece manufacturers have started ion implantation machine technology to be incorporated in the manufacture of solar cell both at home and abroad, and have released one after another that some are suitable for the ion implantor of photovoltaic industry.Show through large production checking, the introducing of ion implantation technique not only makes the efficiency of photovoltaic cell obtain lifting, also reduces production cost, reduces process procedure and decrease environmental pollution etc., promoted the development of manufacture of solar cells technology well.
Photovoltaic ion implantor not only needs the basic characteristics with semiconductor manufacturing ion implantor, but also should have the feature such as low energy (10keV), large line (P+ >=50mA), injects to realize low energy heavy dose.Analyze after deliberation, conventional ion implanter light channel structure cannot have this two features simultaneously: because space charge effects makes misconvergence of beams serious during low energy ion beam transmission, thus causes bundle efficiency of transmission to reduce, and when large line, this problem is especially obvious.In order to meet the features such as ion beam current density is large, energy is low, make final line size and quality reach technique instructions for use, photovoltaic ion implantor needs to design a kind of outstanding low energy large beam ion optical system.
But the low energy large beam transport light path system that existing photovoltaic ion implantor relates to is mostly more complicated, not a kind of light path system solar energy ion implantor simply and efficiently.
Summary of the invention
The present invention aims to provide a kind of solar battery sheet ion implantor, this ion implantor effectively can solve and adopt the solar energy ion implantor device structure of the low energy heavy ion beam transport method of prior art relatively complicated, realizes the problem more difficult, cost is higher.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of solar battery sheet ion implantor, comprise the expansion source ion source injecting the plasma of ion for generation of required doping, Ion Extraction for being produced by ion source obtains the extraction system of the ion beam with certain energy, go out desired ion by mass-to-charge ratio Analysis and Screening and divergence form bundle is corrected as the mass analyzer of broadband parallel beam, and for the target disc of clamping wafer; Described mass analyzer has the ion channel passed for ion; Described target disc is arranged on the exit of ion channel, and described extraction system is arranged on the porch of ion channel; Described extraction system is arranged between ion source and the porch of ion channel.
Light path of the present invention directly injects target disc after adopting beam analysis, substantially reduces beam transmission path, improves beam transport efficiency.Greatly simplify light channel structure, reduce equipment complexity and production cost
Be below the technical scheme of further improvement of the present invention:
Preferably, described expansion source ion source is arcuation angular-spread beam Bei Nasi ion source, can produce that uniformity is good, the large and required injection ion of density advantages of higher of line.
Described mass analyzer is non homogen field designing quality analyzer, and to screen required injection ion and to correct divergence form bundle for broadband parallel beam, the ion channel of described mass analyzer is curved channel.Thus, the ion that ion source produces can be drawn efficiently, and obtain best educt beaming flow under meeting different extraction energy.
Described target disc is fixed with more wafers by electrostatic chuck.
Each target disc is fixed with six wafer, preferably, wafer takes the arrangement mode of 2 × 3 arrays on target platform, and wafer injects and meets multi-disc simultaneously and controlled continuously.
Described mass analyzer, ion mainly through injecting its plane of incidence carries out mass-to-charge ratio analysis and realizes ion screening function, and there is good focussing force by the distance appropriate design of magnetic pole strength to ion beam in the vertical direction, the alienation of horizontal direction non-uniform magnetic-field intensity difference designs, realize restrainting large transformation by the subtended angle bundle of drawing to horizontal broadband, ensure beam transport efficiency.
Above structure, the present invention is by analyzing current main-stream low energy large beam ion implanter technical characterstic and pluses and minuses, with current and following technology to the requirement of the heavy dose of ion implantation technology of low energy for basic point, find from light path principle and break through, be combined with the capable Optical characteristics of finite element analysis instrument and optimization, have devised a kind of low energy large line photovoltaic ion implantor simplifying light path system.This ion implantor adopts succinct, compact arcuation angular-spread beam beam transmission light path system, efficiently, low energy heavy ion beam transport is controlled in high quality, while ensureing that formation efficiency and line size and quality reach technique instructions for use, reduction equipment complexity and production cost, improve equipment dependability, practicality and cost performance.
Compared with prior art, the invention has the beneficial effects as follows:
1. adopt arcuation angular-spread beam Bei Nasi ion source, avoid and adopt beam ion source, broadband and occur the problems such as little, the easy generation of line is discrete, lack of homogeneity, be convenient to subsequent optical path optimal design.
2. the mass analyzer adopted is based upon in non homogen field design basis, effectively improve resolution capability and the focusing performance of large beam ion bundle, reach the mutual coupling of each optical unit, its effect is screening required injection ion and corrects divergence form bundle for broadband parallel beam. effectively improve percent of pass and the efficiency of transmission of ion beam.
3, described light path directly injects target disc after adopting beam analysis, substantially reduces beam transmission path, improves beam transport efficiency.Avoid the beam divergence problem occurred in transmitting procedure, decrease energy contamination.Greatly simplify light channel structure, reduce equipment complexity and production cost; .
4, uniformity regulates and mainly realizes in target chamber part, and then simplifies light path complexity, and while the uniformity that can ensure ion implantation, the equipment of again reducing realizes difficulty, provides cost savings.
5. adopt six phase electrostatic chucks, can be realized the compatibility of 125 × 125 and 156 × 156 wafers by the electrostatic chuck changed on target platform, wafer injects and can multi-disc to carry out and controlled continuously simultaneously, is convenient to the large production requirement of cell piece.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Accompanying drawing explanation
Fig. 1 is the optical schematic diagram of one embodiment of the invention;
Fig. 2 is structural representation target platform of the present invention being installed wafer.
Embodiment
A kind of solar battery sheet ion implantor, as shown in Figure 1, comprises arcuation angular-spread beam ion source 1, extraction system 2, mass analyzer 3, target disc 4.Wherein: arcuation angular-spread beam ion source 1, the plasma of ion is injected for generation of required doping; Extraction system 2, the Ion Extraction for being produced by ion source obtains the ion beam with certain energy; Mass analyzer 3, goes out required ion by mass-to-charge ratio Analysis and Screening, and wherein Theoretical Design mass resolution is 92%, ensure that the purity injecting ion, and it also does up certain focussing force to the ion of transmission, improves the efficiency of transmission of ion beam; Target disc 4, adopt six phase Electrostatic Absorption target discs, each target disc can inject 6 wafer 5 simultaneously, facilitates the large production requirement of cell piece, and the electrostatic chuck changed on target platform can realize the compatibility of two kinds of different model wafers 5.
Solar energy implanter adopts this simple and effective light channel structure, not only shortens the distance of beam transmission, improves the required purity injecting ion, solves injection technology ionic species and pollutes requirement.Meanwhile, reduce the complexity of light path system largely, while guaranteeing efficiency, the equipment of reducing realizes difficulty and realizes cost, improves the market competitiveness of equipment.Wherein, adopt arcuation angular-spread beam Bei Nasi ion source, be used for producing and have that line is large, density is high and the ion beam of the advantage such as uniformity is good, solve broadband ion beam because uniformity is good not, the trouble of the series of steps such as the not high cause of focusing and needing accelerates, focuses on, uniformity and parallel alignment, be convenient to subsequent optical path simplify to reduce equipment complexity, reduce and realize difficulty; Extraction system adopts three diaphragm structures, ion source is drawn panel and is fixed, and regulates and suppresses electrode and ground electrode, to improve the operating state of extraction electrode, elimination design, alignment error are on the impact of drawing seam centering characteristic, and satisfied difference obtains best educt beaming flow under drawing energy.
Mass analyzer adopts non homogen field design, ion beam is made to have higher aggregation properties at analysis seam place, improve resolution capability and the focusing power of ion beam analysis, effectively improve percent of pass and the efficiency of transmission of ion beam, ensure that the required purity injecting ion.Adopt the mode directly injected after analyzing in light path, shorten the transmission path of ion beam, reduce ionic species and the contaminated probability of energy that ion beam brings in transmitting procedure, improve the purity and energy accuracy of measurement of injecting ion.
Meanwhile, guarantee that outlet beam width is large, focusing angle suitable, and little in the discreteness of Soil profile, ensure that accuracy and the consistency of implant angle; Target disc adopts six phase Electrostatic Absorption target discs, and each target disc lays 6 wafer 5.Wafer 5 takes the arrangement mode of 2 × 3 arrays on target platform.The compatibility of 125 × 125 and 156 × 156 wafers 5 can be realized by the electrostatic chuck changed on target platform.
In sum, a kind of solar energy ion implantor simplifying light path disclosed by the invention can realize the requirement of the low energy large beam ion optical system of solar energy ion implantor, simplify the light path system of solar energy ion implantor well, not only meet the requirement of solar cell fabrication process to injection technology, also reduce processing step, reduce the complexity of equipment, the equipment of reducing realizes difficulty and realizes cost, improves equipment validity and practicality.
The content that above-described embodiment is illustrated should be understood to these embodiments only for being illustrated more clearly in the present invention, and be not used in and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Claims (5)
1. a solar battery sheet ion implantor, it is characterized in that, comprise the expansion source ion source (1) injecting the plasma of ion for generation of required doping, Ion Extraction for being produced by ion source obtains the extraction system (2) of the ion beam with certain energy, go out desired ion by mass-to-charge ratio Analysis and Screening and divergence form bundle is corrected as the mass analyzer (3) of broadband parallel beam, and for the target disc (4) of clamping wafer; Described mass analyzer (3) has the ion channel passed for ion; Described target disc (4) is arranged on the exit of ion channel, and described extraction system (2) is arranged on the porch of ion channel; Described extraction system (2) is arranged between ion source (1) and the porch of ion channel.
2. solar battery sheet ion implantor according to claim 1, is characterized in that, described expansion source ion source (1) is arcuation angular-spread beam Bei Nasi ion source.
3. solar battery sheet ion implantor according to claim 1, it is characterized in that, described mass analyzer (3) is non homogen field designing quality analyzer, to screen required injection ion and to correct divergence form bundle for broadband parallel beam, the ion channel of described mass analyzer (3) is curved channel.
4. solar battery sheet ion implantor according to claim 1, is characterized in that, described target disc (4) is fixed with more wafers (5) by electrostatic chuck.
5. solar battery sheet ion implantor according to claim 4, is characterized in that, each target disc (4) is fixed with six wafer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410573361.5A CN104393106B (en) | 2014-10-24 | 2014-10-24 | Solar cell ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410573361.5A CN104393106B (en) | 2014-10-24 | 2014-10-24 | Solar cell ion implanter |
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| Publication Number | Publication Date |
|---|---|
| CN104393106A true CN104393106A (en) | 2015-03-04 |
| CN104393106B CN104393106B (en) | 2017-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410573361.5A Expired - Fee Related CN104393106B (en) | 2014-10-24 | 2014-10-24 | Solar cell ion implanter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111199858A (en) * | 2018-11-20 | 2020-05-26 | 中国电子科技集团公司第四十八研究所 | Ion beam implanter for forming wide band |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979750A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Non-uniform magnetic-field parallel-beam lens system |
| US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
| CN103400741A (en) * | 2013-08-14 | 2013-11-20 | 宁波瑞曼特新材料有限公司 | Equipment and method applied to ion beam injection doping of solar battery piece |
-
2014
- 2014-10-24 CN CN201410573361.5A patent/CN104393106B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979750A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Non-uniform magnetic-field parallel-beam lens system |
| US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
| CN103400741A (en) * | 2013-08-14 | 2013-11-20 | 宁波瑞曼特新材料有限公司 | Equipment and method applied to ion beam injection doping of solar battery piece |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111199858A (en) * | 2018-11-20 | 2020-05-26 | 中国电子科技集团公司第四十八研究所 | Ion beam implanter for forming wide band |
| CN111199858B (en) * | 2018-11-20 | 2023-09-05 | 中国电子科技集团公司第四十八研究所 | Formed broadband ion beam implanter |
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| CN104393106B (en) | 2017-04-19 |
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