CN104393093A - High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene - Google Patents
High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene Download PDFInfo
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- CN104393093A CN104393093A CN201410641038.7A CN201410641038A CN104393093A CN 104393093 A CN104393093 A CN 104393093A CN 201410641038 A CN201410641038 A CN 201410641038A CN 104393093 A CN104393093 A CN 104393093A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims description 16
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- -1 mineral carbon alkene Chemical class 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000004943 liquid phase epitaxy Methods 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 230000005520 electrodynamics Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004043 responsiveness Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004071 biological effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a high-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene. According to the basic structure, the high-detectivity gallium-nitride-based Schottky ultraviolet detector sequentially comprises heavily-doped n type gallium nitride, slightly-doped n type gallium nitride, a silicon dioxide insulating layer, metal electrodes and a graphene thin film from bottom to top. The metal electrodes have the transparent and electric conduction properties and have the half-metallic property. Under the condition that the metal electrodes make direct contact with the slightly-doped n type GaN, the potential barriers of about 0.5 ev can be formed. The formed potential barriers show that the portions, close to the metal electrodes, in the GaN can be bent, so that a spatial charge area is formed, the electron holes are separated, and the photoproduction electrodynamic potential and the photoproduction current are generated. The responsibility of the detector can be greatly improved by introducing the surface defect method. The high-detectivity gallium-nitride-based Schottky ultraviolet detector is simple in structure and process and high in efficiency; thus, the electron hole pair separation capacity is increased, the internal quantum efficiency of the detector is increased, and the detectivity and responsibility are increased.
Description
Technical field
The present invention relates to a kind of novel gallium nitride based schottky type UV detector structure and preparation method, belong to semiconductor photoelectronic device technical field.
Background technology
Ultraviolet detection technology has many application, can be used for polymeric materials resins solidification, purifying water process, flame detecting, biological effect and environmental pollution supervision and ultraviolet light storage etc.In UV photodetector part, GaN material has excellent performance: (1) GaN does not absorb visible ray, the ultraviolet detector made can accomplish that visible ray is blind, do not need filter system. (2) do not need to make shallow junction, greatly can improve quantum efficiency like this. the capability of resistance to radiation of (3) GaN is very strong, can play a role in exploration of the universe secret.GaN ultraviolet detector is mainly divided into following several at present: as photoconduction type, pn junction type, pin type, Schottky junction type, MSM type, heterojunction type.Wherein GaN base schottky junction structure UV detector owing to having higher responsiveness, faster response speed, technique is simple, photosurface is large and be subject to very large attention.
Schottky type ultraviolet detector is that the schottky junction utilizing semi-transparent metals and GaN semiconductor to be formed carrys out work.After semi-transparent metals and GaN form schottky junction, being with of semiconductor bends in the region near metal.For Ni/Au-nGaN schottky junction, because the work function of metal is higher, the work function of semiconductor is lower, and the part near metal of being with of semiconductor is bent upwards, and this part is near the surface of semiconductor.When ultraviolet lighting is mapped to semiconductor surface, light absorption can be produced at semiconductor surface, produce electron hole pair, electron hole pair in this region and space charge region, due to being bendingly separated of being with, generation photogenerated current or photo-induced voltage.
Traditional Schottky type device to adopt semi-transparent metals, but is only about 60% usually used as the semi-transparent metals Ni/Au (2nm/2nm) of Schottky contacts at 300nm place light transmittance, very serious on detectivity impact.There are some researches show, metal often increases 1nm, and its light transmittance declines 10%.And the work function of metal is fixed, be difficult to change, the metal material that only changes at present is the most effective way.Even if but metal material ideal is at present still undesirable.We find in this device of making, and device surface defect can improve the responsiveness (A/W) of device greatly, and detectivity remains unchanged or slightly improve.
Summary of the invention
The object of the present invention is to provide and a kind ofly improve structure of Schottky type ultraviolet detector and preparation method thereof.This new material of Graphene is rationally applied in this panel detector structure, improves the light transmittance of window, improve Schottky barrier to strengthen the ability in its separate electronic hole.Thus improve the detection performance of Schottky type detector.
The structure of a kind of Schottky type ultraviolet detector provided by the invention, its basic structure is followed successively by from the bottom up: highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102, silicon dioxide insulating layer 103, metal electrode 104, graphene film 105.
In the present invention, metal electrode 104 has character that is transparent, conduction, and has Half-metallic, and in intrinsic situation, work function is 4.5ev.When directly contacting with lightly doped n-type GaN, the potential barrier of about 0.5ev can be formed.The potential barrier of formation shows as the inner band curvature of GaN close to metal electrode 104, forms space charge region, can carry out separate electronic hole, thus produce photo-induced voltage and photogenerated current.The light transmittance of single-layer graphene is 97.7%, far away higher than semimetal layer (60%).The sheet resistance representative value of single-layer graphene is 300-1000 ohms/square, although this value is greater than semi-transparent metal layer (10-30 ohms/square), but for this kind of ultraviolet detector, when being generally applied in reverse, the sheet resistance of conductive layer is also little on the impact of its detection performance.The responsiveness of detector greatly can be improved by the method introducing blemish.
The invention provides a kind of Schottky type Graphene-GaN base ultraviolet detector and preparation method thereof,
Step 1, employing metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique) make highly doped n-type gallium nitride 101 successively at sapphire (or the substrate such as silicon chip, carborundum), and thickness is 1-2 micron; Lightly doped n-type gallium nitride 102, thickness is 300-800 nanometer.
Step 2, use inductively coupled plasma etching etching epitaxial wafer surface, etching depth is 10-50nm, increases epitaxial wafer surface defect density.Also or by the mode such as surface corrosion, ion implantation epitaxial wafer surface defect density is increased.
Step 3, by epitaxial wafer clean, photoetching, corrosion, formed mesa structure, i.e. highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102.
Step 4, growth layer of silicon dioxide, on 102, and carry out photoetching, corrosion, form silicon dioxide insulating layer 103, thickness is 100-500 nanometer.
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode 104 (Ti/Au, Cr/Au), and thickness is 15-50/30-3000 nanometer, on silicon dioxide insulating layer 103, namely silicon dioxide insulating layer 103 is in the middle of lightly doped n-type gallium nitride 102, metal electrode 104.
Step 6, transfer Graphene are to device surface, and the number of plies is 1-10 layer, photoetching Graphene figure, plasma etching Graphene, forms graphene film 105.Plasma etching gas is oxygen, and flow is 10-70L/min, and power is 50-100W, etch period 30s-600s.
Step 7, by thinning epitaxial wafer substrate, laser cutting, sliver.
Wherein step 5 and step 6 can be exchanged.
Compared with prior art, the present invention has following beneficial effect.
1, Graphene-gallium nitride ultraviolet detector mainly comprises two parts, and a part is gallium nitride material, and another part is graphene film.Utilize the Half-metallic of Graphene, be combined with gallium nitride, form schottky junction, thus form Built-in potential field, after gallium nitride absorb photons, produce electron hole pair near gallium nitride surface, Built-in potential field is separated electron hole pair, thus forms photoelectric current and build-up potential.This structural manufacturing process is simple, and efficiency is high;
2, mention in technical background, metal is difficult to change common function, and function is the key factor affecting such devices altogether.Graphene is a kind of monoatomic layer material, is easy to its common function is changed by methods such as chemical modifications.Function changes and can strengthen Built-in potential field altogether, thus increases the separating power of electron hole pair, increases detector internal quantum efficiency, increases detectivity and responsiveness.
3, experiment finds, by increasing device surface damage, can increase response device degree, but also increase to some extent along with leakage current.By calculating, the detectivity of device does not decline, and rises to some extent on the contrary.
Accompanying drawing explanation
Fig. 1 is Graphene-gallium nitride schottky ultraviolet detector schematic diagram.
Fig. 2 is the dark I-V curve of Graphene-gallium nitride schottky ultraviolet detector light.
Fig. 3 is Graphene-dark I-V curve of surface erosion gallium nitride schottky ultraviolet detector light.
In figure: 101, highly doped n-type gallium nitride; 102, lightly doped n-type gallium nitride; 103, silicon dioxide insulating layer; 104, metal electrode; 105, graphene film.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
As shown in Figure 1, a kind of structure of Schottky type ultraviolet detector, its basic structure is followed successively by highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102, silicon dioxide insulating layer 103, metal electrode 104, graphene film 105 from the bottom up.
Its process for making in the following example shown in.
Embodiment 1
Step 1, employing metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique) make highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102 successively at sapphire (or the substrate such as silicon chip, carborundum).
Step 2, by epitaxial wafer clean, photoetching, corrosion, formed mesa structure, as highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102.
Step 3, growth layer of silicon dioxide, and carry out photoetching, corrosion, form silicon dioxide insulating layer 103.
Step 4, photoetching electrode pattern, sputtering or evaporation make metal electrode 104.
Step 5, transfer Graphene are to device surface, and photoetching Graphene figure, plasma etching Graphene, forms graphene film 105.Plasma etching gas is oxygen, and flow is 10-70L/min, and power is 50-100W, etch period 30s-600s.Graphene and gallium nitride contact area, namely photosensitive region size is 1 × 1mm
2.
Step 6, by thinning epitaxial wafer substrate, laser cutting, sliver.
Through Semiconductor institute, Chinese Academy of Sciences's ultraviolet detection test system and test, 365nm wavelength response degree is 0.18A/W.Corresponding spectrum is shown in accompanying drawing 2.
Through test at 5.6w/cm
2, under the parallel ultraviolet irradiation of dominant wavelength 254nm, when-6V, specific detecivity is 1.05e12cm Hz
1/2w
-1.
Embodiment 2
Step 1, employing metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique) make highly doped n-type gallium nitride 101 successively at sapphire (or the substrate such as silicon chip, carborundum), lightly doped n-type gallium nitride 102.
Step 2, use inductively coupled plasma etching etching epitaxial wafer surface, etching depth is 10-50nm, increases epitaxial wafer surface defect density.
Step 3, by epitaxial wafer clean, photoetching, corrosion, formed mesa structure, as highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102.
Step 4, growth layer of silicon dioxide, and carry out photoetching, corrosion, form silicon dioxide insulating layer 103.
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode 104.
Step 6, transfer Graphene are to device surface, and photoetching Graphene figure, plasma etching Graphene, forms graphene film 105.Plasma etching gas is oxygen, and flow is 10-70L/min, and power is 50-100W, etch period 30s-600s.Graphene and gallium nitride contact area, namely photosensitive region size is 1 × 1mm
2.
Step 7, by thinning epitaxial wafer substrate, laser cutting, sliver.
Through test at 5.6w/cm
2, under the parallel ultraviolet irradiation of dominant wavelength 254nm, when-6V, responsiveness is 357A/W.Specific detecivity is 1.07e12cm Hz
1/2w
-1.Corresponding spectrum is shown in accompanying drawing 3.
Claims (2)
1. a high detectivity gallium nitride based schottky type ultraviolet detector for using mineral carbon alkene, is characterized in that: the basic structure of this laser is followed successively by highly doped n-type gallium nitride (101), lightly doped n-type gallium nitride (102), silicon dioxide insulating layer (103), metal electrode (104), graphene film (105) from the bottom up.
2. a preparation method for the high detectivity gallium nitride based schottky type ultraviolet detector of using mineral carbon alkene, is characterized in that: the implementing procedure of the method is as follows,
Step 1, employing metal organic chemical vapor deposition or molecular beam epitaxy system or liquid phase epitaxy make highly doped n-type gallium nitride (101) successively on sapphire or silicon chip or carborundum, and thickness is 1-2 micron; Lightly doped n-type gallium nitride (102), thickness is 300-800 nanometer;
Step 2, use inductively coupled plasma etching etching epitaxial wafer surface, etching depth is 10-50nm, increases epitaxial wafer surface defect density; Also or by surface corrosion, ion implantation mode epitaxial wafer surface defect density is increased;
Step 3, by epitaxial wafer clean, photoetching, corrosion, formed mesa structure, i.e. highly doped n-type gallium nitride (101), lightly doped n-type gallium nitride (102);
Step 4, growth layer of silicon dioxide, on lightly doped n-type gallium nitride (102), and carry out photoetching, corrosion, form silicon dioxide insulating layer (103), thickness is 100-500 nanometer;
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode (104), thickness is 15-50/30-3000 nanometer, on silicon dioxide insulating layer (103), namely silicon dioxide insulating layer (103) is in the middle of lightly doped n-type gallium nitride (102), metal electrode (104);
Step 6, transfer Graphene are to device surface, and the number of plies is 1-10 layer, photoetching Graphene figure, plasma etching Graphene, forms graphene film (105); Plasma etching gas is oxygen, and flow is 10-70L/min, and power is 50-100W, etch period 30s-600s;
Step 7, by thinning epitaxial wafer substrate, laser cutting, sliver;
Wherein step 5 and step 6 can be exchanged.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| JP2003273392A (en) * | 2002-03-14 | 2003-09-26 | Mitsubishi Cable Ind Ltd | GaN SYSTEM SEMICONDUCTOR PHOTO ACCEPTANCE DEVICE |
| US20050012113A1 (en) * | 2003-07-17 | 2005-01-20 | Jinn-Kong Sheu | [uv photodetector] |
| CN1641327A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Ultraviolet detector |
| CN1677694A (en) * | 2005-04-27 | 2005-10-05 | 中国科学院上海技术物理研究所 | Gallium nitride ultraviolet detector |
| CN1681134A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Ultraviolet detector with gallium nitride Schottky structure and production thereof |
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| CN102903617A (en) * | 2012-10-22 | 2013-01-30 | 西安电子科技大学 | GaN substrate-based graphene CVD direct epitaxial growth method and manufactured device |
| CN203760501U (en) * | 2014-03-31 | 2014-08-06 | 中国电子科技集团公司第十三研究所 | GaN-based plasmon detector |
-
2014
- 2014-11-13 CN CN201410641038.7A patent/CN104393093B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| JP2003273392A (en) * | 2002-03-14 | 2003-09-26 | Mitsubishi Cable Ind Ltd | GaN SYSTEM SEMICONDUCTOR PHOTO ACCEPTANCE DEVICE |
| US20050012113A1 (en) * | 2003-07-17 | 2005-01-20 | Jinn-Kong Sheu | [uv photodetector] |
| CN1641327A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Ultraviolet detector |
| CN1681134A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Ultraviolet detector with gallium nitride Schottky structure and production thereof |
| CN1677694A (en) * | 2005-04-27 | 2005-10-05 | 中国科学院上海技术物理研究所 | Gallium nitride ultraviolet detector |
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
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