CN104393060B - 一种抗隐裂光伏组件 - Google Patents
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Abstract
本发明涉及一种抗隐裂光伏组件，采用韧性较高的碳化硅薄层沉积到太阳能电池的背面，来增加太阳能电池本身的强度，或采用碳化硅薄层网布加入到组件封装材料中，大幅提升了组件本身的抗隐裂能力，同时不影响组件的散热。给组件其它材料玻璃、EVA、背板和太阳能电池提供了更大的减薄空间。电池生产和组件生产工艺工序无需发生变化，技术导入成本低。未来随着太阳能电池厚度的和其他材料的厚度的持续降低，这种加强结构会受到越来越多的运用。
Description
技术领域
本发明涉及一种光伏组件及其制备方法，具体为一种抗隐裂组件制备方法。
背景技术
随着晶硅太阳能市场的不断发展，越来越多的质量问题被暴露出来，业内对于光伏电池组件质量认识也越来越深入。目前光伏组件隐裂正受到更多重视，即封装在光伏组件内的太阳能电池片出现裂片的现象。由于封装的存在和EVA的粘性，发生裂片的电池各部分碎片间仍保持原来的结合和导电。短时从外观和输出功率上看不到太大的变化，仅能使用电致发光测试机台（EL）测出。但从长期看存在电池片裂片之间受热胀冷缩作用被彻底分离影响发电的隐患，严重的可能导致部分碎片不导通，影响功率，甚至产生热斑发生着火危险。
近期大量的电站发现了名为“闪电纹”的外观情况，成为制造商、安装商和电站业主关注和争论的焦点。经过研究分析发现，闪电纹虽然不完全是隐裂造成的，但总是伴随着隐裂的出现而出现。虽然当前对发电功率影响不大。但影响外观，导致客户接受度变差，长期可能带来其他的性能和安全隐患。
导致隐裂产生的原因有很多，光伏组件的生产、包装、运输、安装和安装之后的环境应力：风、雪、冰雹和温度变化等都有可能造成隐裂。但归根究底，光伏组件的自身强度仍需要提高。
目前行业趋势是制造成本的降低，制造成本的降低不但要求光电转换效率的提升，还要求各项原材料成本的降低。大多数原材料厂家都采用了降低原材料厚度或用量的手段来进行，这种发展趋势进一步降低了组件的结构强度。材料减薄和组件自身强度的提升互相矛盾。
发明内容
本发明的目的是为了提供一种低成本实现抗隐裂光伏组件的方法，采用韧性较高的碳化硅薄层沉积到太阳能电池的背面，来增加太阳能电池本身的强度，或采用碳化硅薄层网布加入到组件封装材料中，来提高组件自身的强度和韧性。
本发明的一种抗隐裂光伏组件采用的技术方案：包括以下结构的至少一种：
①在太阳能电池片背面，电池片周边以及背面电极之外的部位设置一层薄层碳化硅；
②在组件制作过程中，在太阳能电池片层和背板之间设置碳化硅纤维层。
结构①具体为：在太阳能电池片背面沉积一层薄层碳化硅，沉积时使用挡板保护太阳能电池片周边和背面电极部分；然后，采用常规组件封装生产工艺，进行串焊、组版、层压和组框工序，制备太阳能电池组件。
在太阳能电池片背面沉积一层薄层碳化硅，沉积方式采用喷镀、蒸镀或CVD方式。
沉积的薄层碳化硅厚度为0.1~1000微米。
结构②中碳化硅纤维层为碳化硅纤维织成的薄层网布。
结构②具体为将碳化硅纤维织成的薄层网布，在组件组版工序中置于太阳能电池片层与组件背板之间，太阳能电池片层、碳化硅纤维织成的薄层网布和组件背板之间各铺设一层EVA。
所使用的碳化硅纤维直径为1纳米~500微米.
碳化硅纤维织成的薄层网布厚度为0.1~1000微米.
碳化硅纤维织成的薄层网布上有孔隙，孔隙最大直径为5纳米~1厘米，总孔隙面积占网布面积比为30~80%。
太阳能电池片层和玻璃之间EVA厚度与常规组件相同，太阳能电池片层和碳化硅纤维织成的薄层网布之间、碳化硅纤维织成的薄层网布和组件背板之间的EVA厚度为电池片和玻璃之间EVA层厚度的30%~100%。
本发明的有益效果是：本发明使用强度韧性都比较高的碳化硅材料来增强组件的强度和韧性，大幅提升了组件本身的抗隐裂能力，同时不影响组件的散热。给组件其它材料玻璃、EVA、背板和太阳能电池提供了更大的减薄空间。电池生产和组件生产工艺工序无需发生变化，技术导入成本低。未来随着太阳能电池厚度的和其他材料的厚度的持续降低，这种加强结构会受到越来越多的运用。
附图说明：
图1所示为常规光伏组件制造流程示意图；
图2所示为本发明光伏组件结构①示意图；
图3所示为本发明光伏组件结构②示意图；
其中，1，玻璃；2，EVA；3，背板；4，焊带；205，薄层碳化硅；6，太阳能电池片；305，碳化硅纤维织成的薄层网布。
具体实施方式：
为了更好地理解本发明，下面结合附图和实例来说明本发明的技术方案。
常规的组件生产过程为：
串焊：太阳能电池片6通过焊带4串联成一排。
组版：将串好太阳能电池片6排列在已铺设好的玻璃1和其上的一层EVA2上，多排电池片串之间再通过焊带4串联，这样就将所有太阳能电池片6串联。之后再往太阳能电池片6上铺设一层EVA2，最后铺设一层组件背板3。
层压：组版好的结构置于层压机内进行真空热压。
打框：在层压好的半成品四周安装铝合金边框。
所以常规组件的主要结构为玻璃1-EVA-太阳能电池片6-EVA2-背板3结构。
实施例1：
采用常规太阳能电池片6，将太阳能电池片6背面通过化学气相沉积CVD的方式，采用聚碳硅烷为原料，在太阳能电池片6背面沉积一层薄层碳化硅205。反应温度为450℃。沉积厚度为10μm。沉积时采用挡板，挡住太阳能电池片6背面电极和周围，以便于焊接和防止漏电。
将这种镀膜后的太阳能电池，经常规组件制造工序串焊、组版、层压、打框后，就形成了本发明的抗隐裂组件。
实施例2：
在常规组件组版工序中，按照玻璃1-EVA2-太阳能电池片6的顺序铺设后，首先铺设一层减薄EVA2，厚度为0.2mm，
然后铺设一层由碳化硅纤维织成的薄层网布305，网布采用氮化硅纤维直径为1微米，织成的网布厚度为3微米，网孔直径为1mm，网孔孔隙面积占网布面积的50%；
然后铺设一层减薄EVA2，厚度为0.2mm，一层常规组件用TPT背板3。这样就制作成功了本发明的抗隐裂组件。
Claims (3)
1.一种抗隐裂光伏组件，其特征在于，在太阳能电池片背面，电池片周边以及背面电极之外的部位设置一层薄层碳化硅，沉积的薄层碳化硅厚度为0.1~1000微米。
2.根据权利要求1所述的一种抗隐裂光伏组件，其特征在于，在太阳能电池片背面沉积一层薄层碳化硅，沉积时使用挡板保护太阳能电池片周边和背面电极部分；然后，采用常规组件封装生产工艺，进行串焊、组版、层压和组框工序，制备太阳能电池组件。
3.根据权利要求2所述的一种抗隐裂光伏组件，其特征在于，在太阳能电池片背面沉积一层薄层碳化硅，沉积方式采用喷镀、蒸镀或CVD方式。
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